Abstract: Prior to transfer of an wafer W, a mixed gas is being generated and exhausted, thereby fluctuation of concentration and temperature of a solvent component at the beginning of gas introduction into a chamber 3 is suppressed. A step of gelling after the wafer W is carried into an aging unit is divided into several steps. Until a temperature of the wafer W reaches a predetermined treatment temperature, an average concentration of the solvent component in a mixed gas is gradually raised relative to the temperature of the wafer W. Thereby, immediately after the wafer W is transferred into a sealed chamber, the gas of the solvent component is prevented from condensing.

Abstract: A substrate transfer system is used in an in-line film deposition system. The substrate transfer system is provided with an auxiliary vacuum chamber and a main vacuum chamber. The auxiliary vacuum chamber has a plurality of first substrate cassettes. The main vacuum chamber is communicated with another vacuum chamber through which carriers are transferred along a transport path. The main vacuum chamber has two robots and a plurality of second substrate cassettes arranged in parallel on which the substrates is placed. The second substrate cassettes are arranged between the two robots. The substrates are disk-shaped substrates having center holes. The center holes are utilized as hook parts during a pickup operation. Thereby the method of mounting substrates in the holders of carriers etc. is improved without changing the operating speed of the robots. Therefore the amount of substrates transported per unit time is increased and the processing capacity of the substrate processing system is enhanced.

Abstract: A vacuum overspray controller reduces or eliminates the overspray incident to the non-contact spray application of a coating material onto a moving, porous substrate. The vacuum assisted overspray controller exposes a first surface of the porous substrate to a vacuum pressure via one or more orifices in its peripheral surface. As a result, particles of coating material that would otherwise contribute to the overspray instead are preferentially received and retained by the second surface of the porous substrate.

Abstract: When a substrate coated with a coating solution which oxidizes at high temperatures is heat-treated, an oxygen concentration of a treatment atmosphere is lowered when the temperature is low. Next, the substrate is heat-treated in the treatment atmosphere of which the oxygen concentration is lowered. Sequentially, the treatment atmosphere is returned to that with the original oxygen concentration after the passage of a predetermined time after completing the heat treatment. Thereby, the substrate can be heat-treated, with the oxidization of the coating solution being controlled.

Abstract: A suction device for a double-point coating system is used to remove excess powder (3′) from a double-coated fabric web (1). The suction device has a powder-suction element (4) to remove excess powder, a fabric-web-suction unit to align the fabric web and at least one beater roller (8, 9) to loosen excess powder. The fabric web suction unit has at least one suction roller (5, 6, 7) that can rotate to convey the fabric web (1) and support it. That way, the fabric webs can be transported tension-free, which largely prevents adhesion of individual dots of paste and clogging of the textile.

Abstract: A resist film having a thickness of 5500Å or less is coated on the wafer having a large diameter of 8 inches or more by the spin coat process. A resist is dripped while allowing the wafer to be rotated at a rotation speed of 500 rpm to 1200 rpm and the dripping of the resist is suspended at the time of spreading the resist on the whole surface of the wafer. The rotation speed is raised to the predetermined rotation speed which regulates the thickness of the resist film and is determined from the correlation of the predetermined rotation speed and the thickness of the resist film. The wafer is rotated for 1 second to 5 seconds at the predetermined rotation speed. Then, the wafer is rotated for 15 seconds or more at the rotation speed which is lower than the predetermined rotation speed.

Abstract: A coating film forming apparatus for forming a film by applying a coating solution to a substrate, which is provided with a cassette section, coating unit, developing unit, pre-treatment/post-treatment units and a main arm for transferring the substrate between the respective units. In the coating unit, provided is a coating section in which a resist is applied on the substrate in a manner of single stroke by intermittently moving the substrate in a Y-direction and by moving a nozzle in an X-direction, and provided is a reduced-pressure drying section for drying under reduced pressure the substrate after being applied, and further provided is equipment for removing the coating film adhered to a periphery of the substrate. Additionally, when the reduced-pressure drying section is arranged outside the coating unit, the main arm is covered with a cover so that the inside thereof is under a solvent atmosphere.

Abstract: A coater having a controllable pressurized process chamber for applying photoresist to a wafer is provided. The controllable pressurized process chamber reduces the evaporation of solvent in the photoresist during a spin-on process step. Reducing premature curing of the photoresist results in improved uniform planarization of the photoresist layer. Contaminants in the photoresist are also reduced by having an environmentally controllable process chamber. A housing having a upper and lower section forms a process chamber surrounding a wafer chuck. The upper housing section includes a solvent vapor opening for introducing pressurized solvent vapor into the process chamber and the lower housing section includes an exhaust opening. The upper housing section also includes an opening for introducing photoresist onto a wafer. A control device is coupled to the exhaust opening and a vacuum device for controlling the pressure in the process chamber.

Abstract: A method for fabricating a semiconductor device wherein an interconnect made of copper overlying a substrate is pretreated at a specified temperature, for example, at 300° C. or less; and a dielectric film is formed on the copper at a temperature higher than that of the pretreatment. In accordance with the present invention, the adhesion between the copper and the dielectric film is improved by conducting the pretreatment of the dielectric film for reducing an oxide layer of the copper surface, and the agglomeration of the copper can be prevented by the pretreatment.

Abstract: An apparatus for producing thin optical films include a vacuum vessel, a device for spraying a solution or dispersion of materials into the vacuum vessel, and a device for supporting a substrate. The apparatus also includes a heating device for heating the substrate, an exhaust device for the vacuum vessel, and a spray nozzle coupled to a nozzle control mechanism.

Abstract: An open-pored body (11), in particular a carbon component of an aluminum production cell, which is to be exposed to oxidizing conditions or chemical attack at high temperatures is treated to protect the body against oxidation or corrosion at high temperature by impregnating the surface of the body at about ambient temperature with a hot non-saturated liquid (10). This liquid contains a treating agent at a temperature above the temperature of the body. The concentration of treating agent in the hot liquid is such that when the liquid is cooled, before it reaches the temperature of the body, the liquid saturates and treating agent precipitates. A pressure differential is applied to cause the liquid to impregnate into the surface pores of the body (11) and precipitate a layer of the treating agent from the liquid inside the body by cooling as it impregnates the pores of the body.

Abstract: A semiconductor fabrication apparatus for evaporating a material in a growth chamber by a molecular beam epitaxy technique to fabricate a semiconductor is provided. The apparatus includes: an ultra-high vacuum chamber including a liquid nitrogen cold trap therein, the ultra-high vacuum chamber being connected to the growth chamber via a valve; a first evacuation system including an ultra-high vacuum evacuation system, the first evacuation system being connected to the ultra-high vacuum chamber; and a second evacuation system including an evacuation system capable of conducting an evacuation operation even in a low vacuum condition, the second evacuation system being connected to the liquid nitrogen cold trap. The first evacuation system and the second evacuation system independently conduct the respective evacuation operations.

Abstract: An apparatus and method are disclosed for fabricating thin films for use in an active component of an integrated circuit by the use of an assembly line type process. A plurality of substrate stations are located on a platen which is rotated to move each station sequentially between a misted deposition device, a drying device, and a solidification device. The misted deposition device includes a mist showerhead in a movable housing. The mist showerhead separates a velocity reduction chamber from a deposition chamber.

Abstract: Process for covering a surface (1a) of a substrate (1) with a layer (2) of a fluid material, characterized in that: (a) with a confining wall (3) closed up on itself, arranged some distance from and above the surface to be covered (1a), and whose lower edge (3a) forms together with the latter a peripheral void (4), is defined a treatment chamber (5) delimiting an area (6) to be treated on the said surface to be covered; (b) a controlled vacuum is established inside the treatment chamber (5) by admitting an incoming gas stream (7) via the peripheral void (4), and by extracting an outgoing gas stream (8) from the treatment chamber, so as to obtain an internal pressure in the said chamber which is lower than the external pressure; (c) a controlled fluid stream (10) is introduced into the treatment chamber (5) under vacuum, this stream comprising the fluid covering material, which forms at the level of the peripheral void, together with the incoming gas stream (7), a turbulent mixed flow, which is aspirated into

Abstract: A process for the vacuum treatment of workpieces, includes loading the workpieces into a treatment facility, surface treating the workpieces in at least one vacuum station of the facility grouped as a station batch and controlling at least the timing of the process by a freely programmable process controller unit. At least two stations operating each on workpiece batches can be grouped as respective station batches and be different with respect to number of workpieces. The workpieces can be transported to and from the grouped stations. An embodiment of vacuum treatment system for such a process includes at least one vacuum treatment station for workpieces grouped as a station batch. A transport system supplies the vacuum station with workpieces. A process controller unit has an output operationally connected to a drive arrangement for the transport system. The unit controls operating timing of the treatment system and is freely programmable.

Abstract: It is an object to provide an apparatus for manufacturing adhesive layers which can be manufactured in a manufacturing process which is fine, which exhibits an excellent mounting efficiency, which does not require a plating process and which is clean, double-sided substrates and multilayer substrates. A bonding-layer forming portion (5) incorporates a bonding portion (1), a hole machining portion (2), a charging portion (3) and a separating portion (4). A double-sided-substrate forming portion incorporates a bonding portion (6), a hole machining portion (7), a charging portion (8) and a separating portion (9), further incorporating a laminating portion (10), a resin hardening portion (11) and a pattern forming portion (12).

Abstract: Disclosed is an adhesion apparatus for modifying a surface of a substrate with an adhesion promoter so as to improve the adhesive force of a solution coated on the substrate surface in a photolithography process, comprising a support for holding the substrate, the support having a first contact face, a vacuum suction port formed in the support in a manner to surround the substrate held on the support, a lid having a second contact face which can be brought into contact with the first contact face, a processing space being formed between the table and the lid when the second contact face of the lid is brought contact with the first contact face of the support, unit for supplying an adhesion promoter into the processing space, a first annular sealing member positioned intermediate between the first and second contact faces and outside the vacuum suction port so as to surround the processing space, and a second annular sealing member positioned intermediate between the first and second contact faces and inside t

Abstract: A device for the application of a liquid or viscous coating medium onto a moving material web, specifically a paper or cardboard web, includes a curtain coater to apply the coating medium in the form of a curtain or veil to the material web and a suction device to remove air which is carried along by the material web and/or the veil of coating medium. A dynamic pressure analyzer determines the pressure of the air that accumulates before the line of contact of the curtain of coating medium with the moving material web, when viewed in the direction of travel of the moving material web. A control unit controls the suction power of the suction device relative to the determined dynamic pressure.

Abstract: An apparatus and method for evenly applying an atomized adhesive for bonding a die to a leadframe is disclosed. In one embodiment the apparatus includes a hood in communication with an air supply and a vacuum plenum that encompass a semiconductor device component located in a target area during adhesive application so that the adhesive is selectively applied to specific portions of the leadframe or other semiconductor device component and adhesive is not allowed outside the system. A mask or stencil may be employed for further prevention of adhesive application to undesired areas. An air purge may be employed to direct the adhesive mist toward the component to be coated. In another embodiment, a fine adhesive spray is directed against the surface of the workpiece to be coated, selected areas being masked to prevent coating. Wafers may be coated as well as leadframes.

Abstract: A semiconductor device comprising an integrated circuit and a capacitor. In this capacitor, a bottom electrode, a dielectric film and a top electrode are formed, independently of the integrated circuit, on the interlayer insulating film, and the top electrode and bottom electrode are connected with metal interconnections through contact holes opened in the protective film for protecting the surface of the capacitor. In this constitution, either the top electrode or the bottom electrode is connected the bias line of the integrated circuit, and the other is connected to the ground line, so that extraneous emission may be reduced without having to connect the capacitor outside.

Abstract: Apparatus and method for mounting a workpiece support platform or platen within a semiconductor process vacuum chamber to provide electrical or thermal insulation and mechanical stability, but yet minimize mechanical stresses due to differential thermal expansion between the platen and the dielectric spacer. Specifically, the invention includes a workpiece support platen having a rear surface abutting a front surface of a platen-support shelf. The shelf preferably provides electrical or thermal insulation between the platen and the wall of the vacuum chamber. The shelf is attached to the enclosure of the vacuum chamber, but the platen is not rigidly attached to the shelf. Instead, a pressure actuator, such as a spring or pneumatic piston, presses the platen against the shelf. In one embodiment, the pressure actuator can be turned off to allow the platen to expand or contract during periods of heating or cooling, such as when the chamber is turned off or on before or after maintenance.

Abstract: The present invention provides a gas vent system for a vacuum chamber. The particle placed onto the wafer after loading out from a vacuum chamber can be greatly reduced by the system design. The gas vent system has a gas supply, an anti-vibrating tube, a gas regulator, a first line, a second line, a vent valve, and a filter. The anti-vibrating tube is connected after the gas supply for transferring gas without introducing vibration. The gas regulator is connected after the anti-vibrating tube for controlling a flow rate of the gas. The first line is connected after the gas regulator and has a first metering valve. The second line is connected after the gas regulator and is also connected in parallel with the first line. The second line has a second metering valve and an in-line valve in series. The vent valve is connected after the first line and the second line. The filter is connected between the vent valve and the vacuum chamber.

Abstract: A method of improving the breakdown strength of polymer multi-layer (PML) capacitors is provided and of providing a window in food packaging is provided. The method comprises patterning the aluminum coating, either by selective removal of deposited aluminum or by preventing deposition of the aluminum on selected areas of the underlying polymer film. Apparatus is also provided for patterning metal deposition on polymer films comprising masking for defining regions in which metal is deposited. The apparatus comprises: (a) a rotating drum; (b) a monomer evaporator for depositing a monomer film on the rotating drum; (c) a radiation curing element for curing the monomer film to form a cross-linked polymer film; and (d) a resistive evaporator for depositing a metal film on the cross-linked polymer film. The foregoing elements are enclosed in a vacuum chamber.

Abstract: Solvent-free lubrication of thin film magnetic media, such as magnetic discs, is implemented by applying collimated and/or non-collimated beams of lubricant molecules, including polymeric lubricants having a known and narrow molecular weight distribution to selected regions of the media surface, such as the landing zone. Embodiments include providing in-situ and on-demand fractionation of polymeric lubricants.

Abstract: A process serves for recoating a deactivated catalyst coating of a catalyst for converting harmful constituents from the exhaust gas of an internal combustion engine, particularly in a motor vehicle. In this process, washcoat and/or noble metal compounds are sprayed by means of an aerosol into the catalyst. The noble metal compounds are subsequently brought into their elemental state by means of a reducing medium flowing through the catalyst, after which the washcoat applied is dried by heat treatment or calcination. In an apparatus for carrying out the process, a first line for a carrier gas and a second line for the washcoat and/or the noble metal compounds are provided. The first line is arranged at least partly in a region before the catalyst within the second line and at its ends nearest the catalyst is provided with an atomization device.

Abstract: A first tram loaded with wood is introduced at a first, loading end of a treatment chamber along a primary trackway. After treatment, the first tram is removed along the primary trackway from the treatment chamber to a second, opposite unloading end, while a newly loaded second tram is introduced into the chamber at the first end. After the treated wood is unloaded from the first tram, the empty first tram is returned to the first, loading end via a second trackway located under the chamber, parallel to the primary trackway. Pivotable bridges of the primary trackway selectively connect the primary and secondary trackways to allow the return of the unloaded tram to the loading end of the chamber.

Abstract: A microparticle comprising an active substance which is a central core made of liquid, gaseous or solid particle of regular or irregular shape, and the method for entrapping said active substance in a coating material which is conformationally distributed on said active substance and has a thickness ranging from the thickness of a monomolecular layer to about 100 .mu.m. These compositions are useful for applications that require protection, prolonged release, taste masking, improved stability, altered handling behavior, altered surface properties including particle wettability, and other desirably altered properties.

Abstract: A thin-film depositing apparatus of the present invention deposits a sputtered film on a substrate in a sputtering chamber, and removes the substrate having the sputtered film deposited thereon from the sputtering chamber via a load-lock chamber by a robot arm. As a system for controlling the sheet resistance of the sputtered film deposited on the substrate, a measuring device using an eddy current method is mounted in the proximity of a substrate outlet of the load-lock chamber and measures the sheet resistance of the sputtered film of the substrate removed from the substrate outlet. With this structure, it is possible to provide a thin-film depositing apparatus which stably measures the sheet resistance of a thin film deposited on a substrate and performs feedback of the measurement result to control the film deposition conditions so that a thin film to be deposited on a subsequent substrate has a desired thickness.

Abstract: An apparatus for manufacturing a semiconductor device employs a vacuum system, in which a heating source is installed in a predetermined portion of a venting-gas inlet. A venting-speed controlling valve is installed in a predetermined portion of an exhaust pipe, for controlling the speed of gas flowing from a load lock chamber to a pump by controlling the opening and closing thereof. An exhaust pipe may have a main pipe with different diameters in different portions to reduce the venting speed. Accordingly, condensation-induced particle formation can be reduced by thus preventing adiabatic expansion of the gas in a load lock chamber.

Abstract: A deposition system (20) for depositing a material layer on a glass sheet substrate includes a lateral alignment mechanism (28) for laterally aligning glass sheet substrates with an ingress seal (48) of a deposition station (22). The lateral alignment mechanism (28) includes a pair of banks (164, 166) of alignment members (168) spaced laterally with respect to each other along the direction of conveyance. Round alignment surfaces (170) of the alignment members (168) are located above conveyor rolls (96) upstream from the housing of the deposition station and are rotatable about associated vertical axes. A positioner (172) moves one of the banks of alignment members (168) laterally with respect to the direction of conveyance toward the other bank of alignment members to laterally align the glass sheet substrate along the direction of conveyance with the ingress seal assembly (48).

Abstract: An epitaxial barrel reactor for depositing a material on a semiconductor wafer by a chemical vapor deposition process using a reactant gas. The barrel reactor includes a receptacle defining a reaction chamber sized to receive at least one semiconductor wafer. The receptacle has an inlet port for introducing reactant gas to the reaction chamber and an exhaust port for removing reactant gas from the reaction chamber. The reactor also includes an exhaust tube sealingly engageable with the exhaust port of the receptacle for transporting reactant gas to facility piping to remove the gas from the reaction chamber after the chemical vapor deposition process. In addition, the reactor includes an actuator spaced from the receptacle for moving the exhaust tube between an operating position in which the tube sealingly engages the exhaust port of the receptacle and a maintenance position in which the tube is spaced from the exhaust port to provide access to the receptacle.

Abstract: A semiconductor manufacturing system includes a loadlock chamber, a low level vacuum pump connected to said loadlock chamber so as to create a low level vacuum in the loadlock chamber, a processing chamber in which a semiconductor manufacturing process is carried out while the processing chamber is maintained at a high level vacuum, a gate valve interposed between and connecting the loadlock chamber and the processing chamber, and a pressure relieving device for reducing the pressure difference between the low level vacuum of the loadlock chamber and the high level vacuum of the processing chamber at the time the gate valve is opened. The pressure relieving device is a high level vacuum pump which can be dedicated to the loadlock chamber or which can be the same pump as that used to evacuate the processing chamber. The high level vacuum pump is connected to the loadlock chamber by an air valve.

Abstract: An apparatus (10) for decomposing and depositing gaseous metal carbonyls on a mandrel (36). A base plate (12) and cover (14) define a reaction chamber (20). A mandrel ring (28), nested within the base plate (12) and insulated therefrom, supports the mandrel (36). Heat transfer fluid flows through the mandrel ring (28) and into the mandrel (36) to maintain the mandrel (36) at a predetermined temperature to initiate thermal decomposition.

Abstract: The process chamber of a thermal CVD apparatus for a semiconductor wafer W has flooring and ceiling plates made of quartz. Lower and upper heaters are arranged behind the flooring and ceiling plates. The supply for supplying a process gas into the process chamber has a shower head directly under the ceiling plate, an outer tube surrounding the shower head, and radial tubes connecting the outer tube and the shower head. The shower head is made of quartz, and its top bottom and top plates can transmit radiation heat from the upper heater.

Abstract: A system for infiltrating, with active materials, a porous substrate to form electrodes, typically used for batteries, is described that features a vacuum device having a dynamic distribution assembly which allows for continuous and controlled deposition of electrochemical active materials onto a substrate, as the substrate moves therethrough, while preventing the active materials from leaving the vacuum chamber before infiltrating the substrate. The vacuum device includes a vacuum chamber, in fluid communication with a supply of active materials, and a vacuum pump, disposed within the vacuum chamber. The vacuum chamber includes an inlet and an outlet, positioned opposite to the inlet. The first and second opposed major surfaces and a plurality of voids extend therebetween. While disposed within the vacuum chamber, the vacuum pump creates a pressure differential between the first and second surfaces.

Abstract: A mass flow controller controls the delivery of a precursor to a mist generator. The precursor is misted utilizing a venturi in which a combination of oxygen and nitrogen gas is charged by a corona wire and passes over a precursor-filled throat. The mist is electrically filtered so that it comprises predominately negative ions, passes into a velocity reduction chamber, and then flows into a deposition chamber through inlet ports in an inlet plate that is both a partition between the chambers and a grounded electrode. The inlet plate is located above and substantially parallel to the plane of the substrate on which the mist is to be deposited. The substrate is positively charged to a voltage of about 5000 volts. There are 440 inlet ports per square inch in an 39 square inch inlet port area of the inlet plate directly above the substrate. The inlet port area is approximately equal to the substrate area.

Abstract: A solid thin film is formed from a layer of liquid material in such a manner as to fill a contact hole formed in a semiconductor structure; a semiconductor structure is firstly cooled rather than ambience, thereafter, liquid material is spread over the semiconductor structure, then the layer of liquid material is pressed so that the liquid material perfectly fills the contact hole, and, finally, the layer of liquid material is heated so as to form a solid layer from the layer of liquid material.

Abstract: A vacuum treatment system for depositing thin coatings on substrates, with several stationary treating chambers that are held by the annular or frame-like side wall of the vacuum chamber and display the treatment tools and with treatment chamber openings aligned peripherally inward on the center of the vacuum chamber and extending in planes parallel to each other, a shaft, extending parallel to the opening planes and mounted in the vacuum chamber lid and/or in the vacuum chamber bottom plate of the vacuum chamber, is provided that moves the plates for closing the treatment chamber openings and is supplied with actuators for moving the closing plates from a radially inner opening position to a radially outer closing position, whereby the actuators working together with the shaft are designed as lever pinions.

Abstract: In a resist deposition machine, an edge rinse mechanism comprising a cover covering and surrounding an exfoliating-agent discharging nozzle and having an opening formed at a position in the proximity of a peripheral edge portion of a wafer held on a vacuum chuck, and a forced-exhausting tube coupled to the cover. In an edge rinsing operation, the peripheral edge portion of the wafer is accommodated through the opening into an inside of the cover, and a resist exfoliating agent is discharged from the exfoliating-agent discharging nozzle to a peripheral portion of a resist film formed on the wafer held on the vacuum chuck, so that a dissolved resist material and the resist exfoliating agent are scattered into the inside of the cover, and forcibly exhausted from the cover through the forced-exhausting tube. Thus, it is possible to prevent the dissolved resist material and the resist exfoliating agent from adhering on a resist pattern formation zone of the resist film formed on the wafer.

Abstract: The film coating apparatus comprising a mounting table for holding an LCD substrate substantially horizontally, a nozzle having a slit-form liquid discharge port extending from one end to the other end of the substrate, coating solution supply mechanism for supplying a resist solution to the nozzle, and moving means for moving the nozzle in parallel to the substrate in the direction perpendicular to the longitudinal direction of the liquid discharge port in such a manner that the liquid discharge port keeps a constant clearance with the substrate.

Abstract: A varnishing head orientable toward a workpiece for a relative movement of a workpiece and application of a surface coating substance on a workpiece surface, the varnishing head comprising an application nozzle provided with a connection to a surface coating substance source, a suction nozzle provided with a suction connection, the application nozzle being formed as a slot nozzle adapted to face the workpiece surface with a small distance from it and having a mouth which is formed by a slot extending transversely to a movement direction, the suction nozzle being open at a distance from the application nozzle as considered in the movement direction in the workpiece.

Abstract: A heated apparatus, positioned in the X, Y, and Z directions, for forming fine lines of molten material on a substrate. The apparatus includes a pen having a refractory tip wetted with material in a molten state. The tip is attached to a V-shaped heater to form a heater assembly. The ends of the V-shaped heater are welded to the pins of a three lead TO-5 package base. The pen is then mounted on an apparatus adapted to direct writing. To that end, the pen is attached to a supporting device capable of moving in the X, Y, and Z directions. When the welding point of the tip/heater assembly reaches the melting point of the material to be deposited, it is dipped in a crucible containing the material in a molten state. The welding point nucleates a minute drop of the molten material, forming a reservoir. A thin film of material flows from the reservoir and wets the tip, which is then brought in contact with the substrate upon which the desired pattern is to be formed.

Abstract: The present invention manifests a highly excellent effect of allowing the plasma polymerization film to be formed stably for a long time while very rarely suffering occurrence of abnormal discharge during the formation of the plasma polymerization film and promoting the improvement of the yield of products because it adopts as the electrode for implementing plasma polymerization that of the electrodes which is located on the side confronting a surface on which the plasma polymerization film is formed, coats this electrode with a polymer material at a covering ratio in the range of 50-100%, and effects the formation of the plasma polymerization film on an elongate substrate under the operating pressure in the range of 10.sup.-3 -1 Torr. Further, the properties of the plasma polymerization film also become highly excellent.

Abstract: A substrate is located within a deposition chamber, the substrate defining a substrate plane. A barrier plate is disposed in spaced relation above the substrate and substantially parallel thereto, the area of said barrier plate in a plane parallel to said substrate being substantially equal to said area of said substrate in said substrate plane, i.e. within 10% of said substrate area. The barrier plate has a smoothness tolerance of 5% of the average distance between said barrier plate and said substrate. A mist is generated, allowed to settle in a buffer chamber, filtered through a 1 micron filter, and flowed into the deposition chamber between the substrate and barrier plate to deposit a liquid layer on the substrate. The liquid is dried to form a thin film of solid material on the substrate, which is then incorporated into an electrical component of an integrated circuit.

Abstract: Method and apparatus for forming the longitudinal edges of stacks of razor blades by conveying the stacks of razor blades along a conveying path in a vacuum chamber past material deposition and material etching stations. The material etching stations are mounted in the sides of the vacuum chamber to be directed generally toward the edge sides of the edges of the razor blades. In another embodiment, stacks of razor blades are mounted on opposite sides of a rotating pallet and material deposition and etching stations are mounted in both side walls of the vacuum chamber. A DC or RF bias is applied to the stacks of razor blades by capacitively coupling the RF bias or conducting by electrical contacts a DC or RF bias to a central portion of the rotating pallet.

Abstract: A method and apparatus for producing AlN powder employing a vacuum chamber with a nozzle thereon having a hollow center crucible of graphite with a small feed hole in the bottom thereof. A device is provided for heating and melting aluminum in the crucible. A plasma gun connected to a source of argon and nitrogen is ignited below said feed hole, and melted aluminum moves into the plume of said plasma gun. The melted aluminum is atomized in the plume, and the droplets of aluminum are vaporized and react to the nitrogen in the plume, to create AlN which is collected in a collecting chamber.

Abstract: A processing apparatus comprises a plurality of process unit groups each including a plurality of process units for subjecting an object to a series of processes, the process units being arranged vertically in multiple stages, an object transfer space being defined among the process unit groups, and a transfer mechanism for transferring the object, the transfer mechanism having a transfer member vertically movable in the object transfer space, the transfer member being capable of transferring the object to each of the process units. The processing apparatus further comprises a mechanism for forming a downward air flow in the object transfer space, a mechanism for controlling the quantity of the downward air flow, and a mechanism for controlling the pressure in the object transfer space. Thus, a variation in condition of the object transfer space is reduced.

Abstract: There is provided a suction system for use in a method of lining the internal surface of a pipe, said suction system comprises a pig receiving device to be attached to an open end of the pipe, a liquid receiving tank connected with the pig receiving device, and a suction pump connected with the liquid receiving tank. Further, a pig detecting device for detecting the passing of a pig is provided between the open end of the pipe and the pig receiving device, a suction force controlling device is provided between the pig receiving device and the liquid receiving tank, and a gas-liquid separation apparatus is provided between the liquid receiving tank and the suction pump.

Abstract: An apparatus and a method for its use for plating pin grid array packaging modules, with a fixture capable of simultaneously holding a plurality of said pin grid array modules such that three-dimensional bottom surface metallurgy (BSM) is sealingly protected during plating of top surface metallurgy (TSM).

Abstract: A method for coating a substrate having a plurality of channels with a coating media in which the substrate is partially immersed into a vessel containing a bath of the coating media with the volume of coating media lying above the end of the immersed substrate being sufficient to coat the substrate to a desired level. A vacuum is then applied to the partially immersed substrate at an intensity and time sufficient to draw the coating media upwardly from the bath into each of the channels to form a uniform coating profile therein.