Abstract: A plasma processing apparatus which is effective for surface processing uses a reactive gas activated by plasma excited by microwave energy. Generation and maintaining of the plasma excited by the microwave energy are different where pressure in the gas chamber is above 0.1 Torr. Generating a high density plasma and maintaining the plasma includes the use of a protrudent window which extends into the activating chamber which also operates as a cavity resonator. Oxidation of resist formed on the surface of VLSI may be provided and damage by charge particles prevented by use of a magnetic field.

Abstract: An apparatus for producing and coiling films of insulating material coated under a vacuum with electrically conductive material, comprising an electron beam vaporizer, a feed drum, a roller disposed above the electron beam vaporizer and looped by the film, a take-up drum, and deflector rolls for establishing a path for the film, at least one plasma source oriented towards the path of the film so that the plasma touches the film, said plasma source being disposed in the region of the path of the film from the electron beam vaporizer to the take-up drum, wherein the plasma source is disposed at the end of the angle of contact specified by one of the deflector rolls.

Abstract: Apparatus for depositing a coating on at least one substrate where the coating includes at least two component materials where the relative percentages of the component materials with respect to each other varies through the thickness of the coating. The apparatus includes at least two deposition sources for respectively providing the two component materials, at least one mask having at least one aperture, the mask being disposed between at least one of said two deposition sources and the substrate, and a motion effecting mechanism for effecting relative motion between the substrate and the deposition sources to thus effect a predetermined variation of the relative percentages of the component materials as a function of at least the shape of the aperture in the mask.

Abstract: Disclosed are a method and a matrix panel masking apparatus for forming very closely spaced, parallel, elongated, narrow, and electrically separate conductors on a dielectric surface. The matrix panel masking apparatus comprises a plurality of elongated taut wires, being arrangable in a configuration so that the interstices between the wires correspond to the desired matrix panel conductor pattern. The method includes: superposing the matrix panel masking apparatus of this invention on the dielectric surface, depositing conductive material through the interstices and on the dielectric so that after the masking apparatus is removed, the conductors will remain.

Abstract: A distributor beam for depositing coating material on the surface of a sheet of glass includes a plenum divided by a septum for separating different coating gases. Outlets for the gases are connected to an inlet to a mixing chamber for separating and redirecting the flow of the gases to thoroughly mix them into a coating material. A finger baffle having two sets of alternating finger elements extends across the width of the mixing chamber. Each finger element has one end closer to the plenum outlet than an opposite end. The plenum is surrounded by a cooling fluid duct and heating elements are provided for temperature control. Thermocouples generate signals representing desired temperatures and the heaters are controlled to maintain an optimum temperature for the gases as they flow from the plenum to the surface of the glass sheet which is located below an outlet from the mixing chamber.

Abstract: Apparatus for indexing and accurately registering a selected stabilized mask of a plurality of stabilized masks between a substrate and a source during vacuum deposition wherein the apparatus has a mask supporting frame including a mechanism for supporting at least two stabilized masks each having openings which define a pattern and wherein the at least two stabilized masks are supported in a planar spaced relationship relative to each other and have a preselected spacing between the centers thereof, guide and support rollers operatively coupled to the mask supporting frame for supporting the mask supporting frame for lateral movement along a predetermined path between a first position and a second position wherein the first position indexes one of said two of the stabilized masks between a substrate and a source at a working station and the other of the two stabilized masks at a different location along the predetermined path and wherein the second position indexes the other of the two stabilized masks at th

Abstract: Apparatus for performing a plasma enhanced chemical vapor deposition on an edge of a polycarbonate sheet includes a conduit having an axially disposed slit therethrough for engaging the sheet so as to position the edge in the conduit. Axially disposed electrodes are attached to the conduit and positioned to be on generally opposite sides of the edge. Means are provided for applying a separate electrical potential to each of the electrodes, and at least one aperture is provided in the conduit for introducing and removing a gas therefrom.

Abstract: A method of aligning thin-film structure patterns on a substrate formed with the use of an apertured mask in a vacuum deposition system.

Abstract: An on-line film fluorination apparatus cooperative with a continuous polymer film extruding apparatus is set forth. In the preferred and illustrated embodiment, a continuous feed film is introduced into a closed cabinet or housing having alignment and guide rollers for directing the film into the housing. The film passes around a first roller having a portion thereof formed of sintered nickel to enable gaseous impregnation of the surface of the film with a gas flow including fluorine. The gas acts on the exposed face of the film, changing the surface of the polymer film, thereby providing a relatively thick surface upgrading of the film. After exposure to the fluorine, the film passes a closed vacuum container having an open face adjacent to the film surface for drawing off unreacted fluorine for recapture and recycling.

Abstract: A method of processing a plurality of semiconductor wafers from a wafer cassette including a wafer transfer housing and one or more processing chambers. A wafer is removed from its cassette and transported through the transfer housing into one or more processing chambers for etching, deposition or other such operations. The processed wafer is replaced into its cassette after being transported back through the wafer transfer housing.

Abstract: An apparatus according to the present invention for thin film formation using a photo-induced chemical reaction comprises a reaction chamber in which a substrate can be set, means to introduce a reactive gas into the reaction chamber for the purpose of causing a surface of the substrate to adsorb the reactive gas, means to evacuate the reaction chamber, means to irradiate the substrate surface having adsorbed the reactive gas with photon energy for the purpose of forming a nucleus required for growing a film on the substrate surface, means to generate metastable excited molecules which can react with the reactive gas to decompose it, and means to introduce the reactive gas and the metastable excited molecules into the reaction chamber for the purpose of growing the film on the substrate formed with the nucleus on the basis of the nucleus.

Abstract: A vacuum vapor depositing system in which a plurality of vapor delivering nozzles fit between, and are guided by, bars supplying inert gas as barrier regions controlling the lateral spread of the vaporized material being deposited.

Abstract: A stabilized mask assembly for direct deposition of a thin film pattern onto a substrate having a dimensionally stabilized mask supporting frame which includes an opening extending therethrough and defining a surface extending circumferentially around the opening, a relatively thin, substantially planar mask having a predetermined yield strength and selected geometrical shape and dimension wherein the mask is positioned adjacent the opening with the periphery of the mask circumferentially contiguous the circumferentially extending surface and wherein the mask has at least one aperture extending therethrough and arranged in a predetermined location defining a thin film pattern, and a securing device for rigidly affixing the periphery of the mask to the circumferentially extending surface with a substantially uniform tension applied to and in the plane of the mask and wherein the tension has a magnitude which establishes a stress on the mask during use which is less than the predetermined yield strength of the

Abstract: A method for forming a thin film on a substrate, which comprises aligning an evaporation means for an evaporating material to be deposited on the substrate, a plasma generating zone for dissociating an ion-forming gas into ions and electrons, an ion beam accelerating zone for accelerating the resulting ions and irradiating them onto the substrate, and said substrate on a substantially straight line in the order stated, and depositing a vapor of the evaporating material on the substrate through the plasma generating zone and the ion beam accelerating zone. According to this method, surface irradiation can be carried out uniformly because the ion species and the vapor atoms are irradiated in quite the same direction. Furthermore, the vapor atoms can be activated to a high degree, and the by-product electrons can be effectively utilized for the evaporation of the evaporant.

Abstract: Apparatus for producing open ended plastic containers having decreased gas permeability that includes a vacuum chamber and a pump for regulating the pressure therein, an ionization source mounted in the chamber proximate the container's open end and a container holder located in the chamber. The container holder has a hole aligned with the open end and may include a shield that encompasses the exterior of the container and may include a magnet setting up a magnetic field on the exterior of the shield. In the method, a container is placed on the container holder in the chamber with the open end and hole aligned and with the shield and magnet located as described above. The coating material is vaporized and ionized so that the ionized material is deposited on the interior wall of the container.

Abstract: A coating hood for applying protective coatings to glass containers, includes a pair of spaced side walls; a supply of vaporized or atomized coating chemical in a carrier gas; a conveyor for transporting the glass containers to be coated longitudinally through the coating hood; a hood ceiling with a plurality of openings positioned at the level of the container finishes for supplying coating free air across the finish of the containers; the openings on one side of the containers are offset in the longitudinal direction of the hood with respect to the openings on the other side of the containers; each opening supplying an envelope of the coating free air across the finish of the containers such that lateral boundaries of the envelope of each opening on one side of the containers are substantially coincident with lateral boundaries of the envelopes of the offset and laterally adjacent openings on the other side of the containers; and a blower for supplying the coating free air to the openings.

Abstract: A continuous vacuum deposition apparatus for coating a metal strip in which a control means for changing the width of the metal vapor channel so that strips of various widths can be deposition-coated with transversally uniform thickness distribution is disclosed.

Abstract: A method for the production of substrates with a uniform dispersion of extremely fine granules comprising: forming extremely fine granules in a granule-formation chamber under a reduced pressure by a gas-evaporation technique, introducing said extremely fine granules into a granule-recovering chamber under high vacuum, which is adjacent to said granule-formation chamber, through a slit formed in the partition between said granule-formation chamber and said granule-recovering chamber, and allowing said extremely fine granules to be dispersed on and attached to a supporter disposed in said granule-recovering chamber.

Abstract: In vacuum depositing apparatus, especially for the manufacture of magnetic tapes, a substrate holder is disposed in the form of a cooling cylinder, and in the path of the vapor stream there is a mask for the purpose of geometrically restricting the vapor stream. In order to prevent any condensation of vaporized material in solid form, the surface of the mask facing the vapor stream is not aligned horizontally, and its lowermost edge lies within the projected surface of the crucible opening. The surface of the mask can be heated up to a temperature that is between the vaporizing temperature and the solidification temperature of the vaporized material. In an especially advantageous manner, the surface of the mask is formed by tiles of a ceramic material.

Abstract: A method of manufacturing a semiconductor device, in which method a plurality of epitaxial layers are deposited by molecular beam epitaxy. A significant problem in such a method is the variation in the flux emitted by an effusion cell after the shutter associated with that cell has been opened, this resulting in undesired variations in the composition in the thickness direction of the epitaxial layer being grown. In a method according to the invention, when the shutter of a molecular beam source is opened, the rate of input of heat to that source is increased by a predetermined value so that the temperature of that source does not change substantially as a result of the opening of that shutter, and when the shutter is closed the rate of input of heat to that source is reduced by the predetermined value.

Abstract: A thin film formation technique and apparatus therefor which comprises converting a molecular beam effusing from a molecular beam source equipment to a pulsed molecular beam; introducing the pulsed molecular beam into an ionization chamber in such a fashion that the most of the pulsed molecular beam is caused to be incident to a substrate while a part is ionized by the ionization chamber; amplifying the ion or the electron converted from the ion and converting it to an electrical signal; calculating the flux and speed of the molecular beam; controlling the molecular beam effusing from the molecular beam source equipment on the basis of the calculation information; and forming the thin film on the substrate.

Abstract: A process and apparatus for depositing a high-quality metallic coating on a steel strip. In this process, one or several metals or metal alloys are continuously evaporated in a thermal plasma from nonoxidizing gas and transformed into the highly ionized state of the thermal plasma. Subsequently, the metal ions contained in the plasma are electrostatically deposited on the steel strip at a pressure elevated by 100 Pa to 5000 Pa relative to the ambient pressure. During coating, the steel strip is held at a uniform temperature and coated at a rate of 40 m/min to 600 m/min.

Abstract: A system for plating resonator electrodes or the like by the vapor deposition process employs one or more shutters between the deposition material source and a plating mask. At least one of the shutters has a pair of apertures aligned with different apertures in the plating mark. In one embodiment comprising a two shutter, four position system, the two shutters may be positioned such that either, both or neither of the resonators can be plated. Because each shutter is either ON or OFF, a simple binary analogy for control of the shutters results.

Abstract: Apparatus for and a method of confining the ionized plasma developed during the glow discharge deposition of thin film semiconductor alloy material to preselected portions of the plasma region so as to prevent etching and deposit only uniform, nonhomogeneous semiconductor alloy material.

Abstract: Module for processing advancing substrates including an elongated housing enclosing pairs of superposed transporters defining a longitudinal passage; a source of pressurized gaseous transport medium communicating with the longitudinal passage, so as to provide a free floating transport of the substrates through the passage; and a series of processing chambers interposed between the pairs of transporters, so that a non-processing side and a processing side of the advancing substrates are exposed within the processing chamber. A plurality of gaseous transport medium discharge ducts extends laterally across the longitudinal passage above and below the substrates so as to collect and remove excess gaseous transport medium, while assisting the advance of the substrates in the passage.

Abstract: A process and an apparatus for forming films, up to several microns in thickness, on substrates by the combination of ion implantation and vapor deposition; said apparatus comprising a vacuum chamber, means for transporting a substrate within the vacuum chamber, a first ion source having an accelerating voltage of 500 V to 5 kV and disposed at a first position along the direction of movement of the substrate within the vacuum chamber, a first evaporator disposed at a second position along the direction of movement of the substrate within the vacuum chamber, and a second ion source having an accelerating voltage of 10 kV to 100 kV and disposed at a third position along the direction of movement of the substrate within the vacuum chamber, and optionally further comprising a second evaporator disposed at a fourth position along the direction of movement of the substrate within the vacuum chamber, which may be provided with high-frequency exciting means disposed in a path of release of vapor from the second evapo

Abstract: A photo-mask is mounted on a repairing chamber, with its mask pattern forming surface being exposed to the interior of the chamber. Vaporized repairing material which includes a metallic element is introduced into the chamber, and a laser beam is projected from the exterior of the chamber onto a transparent defect of the mask pattern. The irradiated portion is heated and the vaporized repairing material at the heated portion is resolved, resulting in the metal resolved from the repairing material deposits and fills the transparent defect. Thus, transparent defects of a mask pattern can be repaired in a simplified process.

Abstract: Improved apparatus (10), including passage (22) for inter-cushion processing and transport of substrates (12) towards and from process modules (14) and (16) for main processing of said substrates (12) at non-atmospheric pressure in a series of successive process chambers (64), located in between successive processors/transporters (66), in which secondary processing and transport of said substrates (12) take place.

Abstract: An apparatus for automatically controlling the rate of vacuum deposition of thin films on a substrate, consisting of an optical diaphragm or shutter in the form of two overlapping plates which together define a shutter opening between an evaporation crucible and a substrate. The overlapping plates are attached to a pair of rack gears to be moved in opposite directions by a pinion gear to vary the size of the shutter opening through which the evaporated material must pass to be deposited on the substrate. The rate of evaporation is sensed by a quartz crystal monitor and a signal therefrom is compared to a reference signal. The difference between the two signals is used to control the movement of the apertured plates thereby correcting the rate of deposition of the thin film.

Abstract: An improved crystal plating device having a base containing a power circuit and an oscillating circuit. The base is provided with a chamber and has a sealed top enclosing the chamber. At least one pair of filament posts are fixed to the base and disposed within the chamber and in the power circuit. A filament is connected across the filament post. A crystal holder is removably connected with the base. The crystal is held by the holder in the oscillating circuit. A pump is connected to the base to vacuum pump the chamber. Energizing the circuits will oscillate the crystal and evaporate the filament to plate the crystal and produce the desired frequency therefore. The improvement comprises a crystal holder designed to hold a plug-in circuit board having a plurality of prongs, the board containing the crystal. The crystal holder includes plug-in means for inserting the prongs of the circuit board in the oscillating circuit.

Abstract: Improved apparatus (10), including passage (22) for inter-cushion processing and transport of substrates (12) towards and from process modules (14) and (16) for main processing of said substrates (12) at non-atmospheric pressure in a series of successive process chambers (64), located in between successive processors/transporters (66), in which secondary processing and transport of said substrates (12) take place.

Abstract: Apparatus for shielding substrates from plasma developed adjacent the ends of r.f. powered cathodes, the apparatus adapted for use in a glow discharge deposition system in which successive amorphous semiconductor layers are deposited onto a substrate. The deposition system includes at least one deposition chamber into which process gases are introduced and disassociated in the presence of electrodynamic fields created between a cathode and a substrate. The shielding apparatus of the present invention comprises a pair of relatively narrow, elongated plates adapted to be spacedly disposed in the deposition chamber so as to lie in a plane substantially parallel to the plane of the substrate. By disposing one of the plates adjacent each of the ends of the cathode, only homogeneous semiconductor films formed by uniform electrodynamic fields produced adjacent the central portion of the cathode are deposited onto the substrate.

Abstract: Apparatus and method are provided for spraying a fluid through a first nozzle (48), and more particularly to spraying the vapor of a metallic compound onto glass containers (132), and for cleaning the first nozzle (48) without removing the first nozzle (48) and even without stopping the flow of the fluid being sprayed. The apparatus and method include providing a chamber (76) that is juxtaposed to the inlet (62) of the first nozzle (48), providing a second nozzle (52) whose outlet (68) is disposed inside the chamber (76), and spraying a fluid, preferably air, through the second nozzle (52), into the inlet (62) of the first nozzle (48), and through the first nozzle (48).

Abstract: A mask loading apparatus and method employing a cassette (200) detachably mounted on an in-out cassette holder (212). The cassette is made of low Z-materials, and comprises a cover (211) and a bottom mask-supporting tray (202) locked by machine-operable locking members (224) to the cover. A lift cylinder (218) has a vacuum cup (216) which is raised to support and hold the underside (213) of the tray and, when the tray is unlocked from the cover, to move the vacuum cup, tray and mask downwardly and then laterally by a transport arm (203) to a fixed location under a mask holder (205, 220) in a lithographic apparatus.The lift cylinder then raises the cup, tray and mask to abut the mask holder and to transfer the mask to the mask holder. The lift cylinder and empty tray is then lowered and removed from a position blocking the mask as it is to be used in the lithography processing. A reversal of the sequence of steps is utilized to unload the mask from its use mode and return it to its cassette cover.

Abstract: A vapor deposition apparatus for continuously regulating the deposition thickness from vapor as it is being vacuum deposited across and progressively along one side of a substrate from one or more vapor sources spaced thereacross. The apparatus comprises a central shaft rotatably supporting hollow shafts in end-to-end relation, a series of profile discs on each of the hollow shafts and slidable radially thereon by a slot in each profile disc slidably locating on flats on the hollow shafts. The profile discs are placed between vapor sources, and the substrate moving through a vacuum coating chamber so that the profile discs form a mask controlling the vapor deposition across the substrate. The hollow shafts are coupled to electric motors which may rotate the hollow shafts in response to signals from deposition thickness sensing means.

Abstract: In the process for manufacturing the ferrite cores used in magnetic data transducer heads, a novel stacking of the bars from which the core pieces are cut allows these bars to mutually shield each other's back gap areas during the alumina sputtering step which sets the lengths of the read/write flux gaps. An inexpensive fixture supports the bars in the desired position during the sputtering operation.

Abstract: A layer of a compound semiconductor having good quality is formed by disposing a substrate in an epitaxial growth layer, feeding a second reactant gas through a guide member extending from the downstream side to the upstream side of the flow of a first reactant gas, mixing the first reactant gas and second reactant gas, and supplying the resultant gaseous mixture of the first and second reactant gases onto the substrate.

Abstract: Automatic loading mechanism for automatically transferring semiconductor wafers from storage cassettes onto disk shaped electrodes carried on a hexagonal electrode structure within a plasma reaction chamber. The system includes a reactor chamber, a transport mechanism for transporting semiconductor wafers from storage cassettes and to storage cassettes and a loading mechanism for transferring semiconductor wafers from said transport mechanism onto the electrode structure within the reactor chamber and for transferring processed wafers from said reactor chamber back to said transport means for transport to an output cassette.

Abstract: This invention relates more particularly to an electron-gun metal evaporation system for solder (lead/tin, lead/indium) deposition upon integrated circuit chips. This system utilizes a crucible comprised of a tantalum bent-cone V-shaped liner or cup seated in spaced relationship in a recess of a copper hearth.

Abstract: Electrical components which have alternate metal and polymer layers carried on a substrate are produced by fixing the substrates on a rotatable drum and rotating the drum through first and second vacuum chambers which are air-locked with respect to each other. A metal layer is applied in the first vacuum chamber by vapor deposition or sputtering and a polymer layer is provided in the second chamber by a glow discharge operation.

Abstract: A magnetic metal deposition material contained in a hearth is heated and evaporated in a vacuum to form a flow of vapor, which is then ionized and converged toward a predetermined deposition surface of a flexible substrate. The flexible substrate is moved obliquely downwardly along a convex course by sliding contact with the curved surface of a fixed curved guiding body between a pair of guide rollers located at different heights above the hearth. The fixed curved guiding body communicates with a coolant source for cooling the substrate moving in contact therewith and may be provided with oscillators. Thus a thin film of the magnetic metal is deposited on the convex surface of the substrate.

Abstract: Substrates, particularly a method of transporting and coating substrates within a confined longitudinal passageway. The method is characterized by the transport and coating of the substrate without human or mechanical contact. The method includes supplying a fluid medium into the confined passageway and discharging the fluid medium from the passageway, such that the moving fluid medium cushions while longitudinally transporting the substrate within the passageway.

Abstract: Apparatus for indexing and accurately registering a selected one of a plurality of deposition masks in operative relationship to a substrate comprising carriage means for supporting a plurality of deposition masks in an aligned spaced relationship relative to each other wherein each of the deposition masks has a selected number of prealigned registration members located thereon in a predetermined pattern and which are adapted to co-act with reference registration members loaded thereagainst, gantry means for supporting a substrate at a deposition station above the surface of the deposition masks having the prealigned registration members located thereon, reference registration members which are located on the substrate or around the periphery of the gantry means and which are directed towards and adapted to be loaded against the prealigned registration members to position the gantry means and the substrate relative to the selected one of said plurality of deposition masks, indexing means for transporting the

Abstract: A vacuum coating vessel is provided comprising a casing having a vacuum coating compartment separated from a vapor source compartment by a partition having vapor ports. A slidable shutter plate is provided on the vapor source compartment side of the partition. The shutter plate, in an open position, aligns vapor ports therein with the ones in the partition, and, in a closed, closes the vapor ports with `O`-ring seals. A mechanism is provided for moving the shutter plate away from and then towards the partition at the beginning and end respectively of each stroke to avoid scraping the `O`-rings and to ensure that the `O`-rings are kept as clean as possible. The vapor ports of the shutter plate and the partition are chamfered away from the vapor source compartment so that the `O`-ring sealing surfaces around the vapor ports in the partition are masked when the shutter plate is in the open position.

Abstract: A method for controlling the slope of the edge gradient of a layer of vapor deposition material onto a substrate from an evaporation source of vapor deposition material comprising the steps of forming a flux of vapor deposition material having an effective source cross-sectional area and shape from an evaporation source of a vapor deposition material located at a known position, indexing a deposition mask having a plurality of apertures extending therethrough such that the mask is in a spaced relationship from the source defining a source-to-mask distance and positioned in the flux of vapor deposition material to permit the flux of vapor deposition to pass through the apertures, registering a substrate in a spaced relationship from the deposition mask defining a mask-to-substrate distance to permit the flux of the vapor deposition material passing through the apertures in the deposition mask to impinge onto the substrate forming a layer of vapor deposit material thereon, controlling at least one of the effect

Abstract: An apparatus for vacuum evaporating magnetic material onto a base. Cylindrical cans are disposed parallel to one another and rotated either in the same or opposite directions. A tape-shaped base is wound around the cans passing from an upper vacuum chamber to a lower vacuum chamber. A vacuum evaporation source is positioned in the lower chamber and directed to the tape-shaped base in a predetermined area on both sides of a gap between the cans or a line contact area between the cans.

Abstract: An arrangement for coating substrates in an apparatus for vacuum deposition comprises a rotatable substrate holding structure in the form of a circular plate provided with holders for the substrates. The holders are arranged in circular rows around the axis of rotation of the plate so that the substrates held in the holder are arranged at axes such that those substrates in a single circular row have axes which intersect a single point along the axis of rotation of the plate. A vapor beam correction screen is mounted for rotation adjacent to the plate in an opposite direction about the same axis. A vapor beam correction screen is conformed in a stepwise manner to an even coating of spherical zones which have their center of curvature at the point of intersection of the substrate axes and are tangent to the poles of the respective substrates and cover the surface areas thereof.

Abstract: The invention provides a method and a device for mass-producing a magnetic recording medium which has excellent wear and corrosion resistance and uniform quality along the longitudinal and transverse directions of an elongated base body, wherein the elongated base body in a vacuum chamber is fed to continuously deposit a ferromagnetic material thereon, while a gas is sprayed in the vicinity of an incident angle control section of a mask for controlling an angle of incidence of a vapor flow from a vapor source to the elongated base body. The angle of incidence is kept constant to prevent deposition of the vapor material on the incident angle control section, and simultaneously, a uniform oxide film is formed on the ferromagnetic layer using a gas containing oxygen.

Abstract: An apparatus for manufacturing a magnetic recording medium using vacuum-deposition from an evaporated metal source having a very high efficiency and uniform deposition. The support onto which the magnetic film is to be evaporated is guided and conveyed along a curved path above a molten metal evaporating source at a substantially constant speed. The curved path is shaped such that evaporated metal flow lines connecting a central point on the evaporation surface of the molten metal in the evaporating source to corresponding intersection points on the support form the same angle of incidence with respect to the longitudinal direction of the support for all positions along the support where the film is to be deposited. Endless belt structures including guide rollers and magnets are used to form rising and falling paths for conveying the support along the desired curved path.

Abstract: In a microwave plasma etching apparatus wherein the surface of a sample is exposed to a plasma generated by microwave discharge, thereby to subject the sample surface to an etching processing; the sample is transported while revolving along a circular orbit in a plasma exposure region, and the section of the plasma exposure region is put into the shape of a fan whose pivot coincides with the central point of the circuit orbit, whereby the enhancement of the etching processing capability and the uniformity of the etching speed are achieved.