Abstract: Deposition of ionized material at a beveled or non-flat edge of a semiconductor wafer and the etching by the ionized material at such edge is controlled in a high density plasma processing machine by surrounding the wafer with a conducting ring to affect sheath potential and deflecting the ions of the material in such a way that the deposition and etching rate changes in a controlled way over the region immediately adjacent the wafer edge. The ring may be biased in several ways to control the ion flux to the wafer edge.

Abstract: Apparatus (10) for treating a substrate, comprising: a vacuum chamber (12); a substrate carrier (14) adapted to carry a substrate (16) to be treated; a source material holder (22) for holding a source material (34) with which the substrate (16) is to be treated; and vaporising or sputtering means (20) for vaporising/sputtering the source material (34); wherein the source material holder (22) includes a positioning means (24) for relatively moving the source material (34) towards the substrate carrier (14).

Abstract: Vapor deposition of a uniform thickness thin film of lubricant on at least one surface of a substrate, comprises the steps of: (a) providing an apparatus comprising: (i) a chamber having an interior space maintained below atmospheric pressure; (ii) a substrate loader/unloader for supplying the interior space with at least one substrate and for withdrawing at least one substrate from the interior space; (iii) at least one lubricant vapor source for supplying the interior space with a stream of lubricant vapor; and (iv) a substrate transporter/conveyor for continuously moving at least one substrate past the stream of vapor from the at least one lubricant vapor source; (b) supplying the interior space with a substrate having at least one surface; (c) continuously moving the substrate past the stream of lubricant vapor and depositing a uniform thickness thin film of the lubricant on the at least one surface; and (d) withdrawing the lubricant-coated substrate from the interior space.

Abstract: A semiconductor exposure apparatus includes an exposure stage for holding a substrate when a predetermined exposure process is performed to the substrate, a transfer station for receiving a substrate from a resist coating unit, the transfer station having a temperature adjusting device for adjusting a temperature of the substrate, and a conveying device for conveying a substrate from the transfer station to the exposure stage.

Abstract: An alignment device for permitting a deposition mask having a plurality of mask segments to be positioned relative to a substrate to facilitate simultaneous deposition of organic material on to the substrate which will be part of an organic light emitting device.

Abstract: The invention provides a removable first edge ring configured for pin and recess/slot coupling with a second edge ring disposed on the substrate support. In one embodiment, a first edge ring includes a plurality of pins, and a second edge ring includes one or more alignment recesses and one or more alignment slots for mating engagement with the pins. Each of the alignment recesses and alignment slots are at least as wide as the corresponding pins, and each of the alignment slots extends in the radial direction a length that is sufficient to compensate for the difference in thermal expansion between the first edge ring and the second edge ring.

Abstract: A thin film formation apparatus includes a vacuum chamber, a target holding mount held movably in the vacuum chamber, a target containing a film material, an ArF excimer laser for emitting high energy radiation to a surface of the target, an optical system for concentrating the radiation from the excimer laser to the surface of the target, a substrate holding mount holding the substrate, an oxidizing gas inlet for supplying an oxidizing gas into the vacuum chamber for oxidizing a substance deposited on the substrate, a heater placed inside the substrate holding mount for heating the substrate in the vacuum chamber, and a light for irradiating the substrate held on the substrate holding mount with light rays.

Abstract: A method for depositing a material onto a plurality of features located on a surface of a substrate provides more accurate and consistent control over where the material is deposited. The method comprises evaporating the material to create an evaporant stream, positioning the substrate so that the evaporant stream strikes the plurality of features over a range of exposure angles between the evaporant stream and the substrate, moving the substrate to vary the range of exposure angles over which the evaporant stream strikes the plurality of features, and moving one or more shutters into the evaporant stream to block any part of the evaporant stream that has an exposure angle greater than a critical exposure angle.

Abstract: [Object] To provide a new method for patterning in which a degree of flexibility in selection of materials is increased and, in addition, to provide a method for manufacturing a film, a method for manufacturing an organic electroluminescent element and a method for manufacturing a color filter using the aforementioned method for patterning, and furthermore, an electro-optic apparatus and a method for manufacturing the same, and electronic equipment.

Abstract: This invention relates to an apparatus for depositing a layer of material on to a workpiece. The apparatus includes chamber 11, a sputter target 12, a wafer support 13, wafer transport aperture 14 and a wafer transport mechanism 15. The last delivers the wafers along a transport path 16. An annular shield 19 is disposed between the support 13 and the target 12 and lies in the wafer transport path 16. Pins 30 are provided to lift the annular shield out of the transport path 16.

Abstract: A method of fabricating an integrated circuit using photolithography and an antireflective coating. An antireflective coating is formed on a substrate wherein the antireflective coating is electrically polarizable. A photoresist coating is formed on the antireflective coating on a side opposite from the substrate and the photoresist is exposed to activating radiation. The antireflective coating is subjected to an applied electric field at substantially the same time as the photoresist is exposed to activating radiation. The radiation absorption coefficient of said antireflective coating is increased and the refractive index of said antireflective coating is changed to be substantially equal to the refractive index of said photoresist coating.

Abstract: The present invention provides exemplary apparatus and methods for processing substrates and for ensuring purge gases reach the substrate edge, including edges of JMF type wafers, to help prevent unwanted deposition thereon. One embodiment provides an apparatus for processing substrates which includes a chamber and a substrate support (13) disposed in the chamber. An edge ring (15) is disposed on the substrate support. The edge ring has a lip portion (30) which at least partially overhangs an upper surface (36) of the substrate support to define a gap (29) between the lip portion and the upper surface. In this manner, the edge ring is designed to form a gap which properly directs purge gases to edges of the substrate, including JMF type substrates.

Abstract: An LPE (Liquid Phase Epitaxy) apparatus is diverted to a Zn-diffusion apparatus for diffusing Zn into III-V group compound semiconductor. The Zn-diffusion apparatus comprises a base plank extending in a direction, having a wafer-storing cavity for storing an object wafer and an exhaustion hole for exhaling gases, a slider having a frame and a cap plate for attaching to or detaching from the frame, the frame having serially aligning M rooms with an open bottom and a rack being separated from each other by (M−1) partition walls, a manipulating bar for sliding the slider upon the base plank forward or backward in the direction, a tube for enclosing the base plank and the slider and for being capable of being made vacuous, a heater surrounding the tube for heating the slider, each rack of the rooms being allocated with a Zn-diffusion material and a V element material (or a non-doped capping wafer) in turn for aligning the rooms into repetitions of a V element room and a diffusion room.

Abstract: An oblique sputtering deposition apparatus is provided for preparing a thin film. A collimator having angled passages for filtering out particles from stray directions is placed between the substrate and the incident particle flux. The angle of the passages can be adjusted from about 0 to about 90° with respect to the substrate normal according to requirements. The oblique incidence of particle flux brings forms a column structure which is also angled.

Abstract: A protective package comprises an enclosure including a back plate that has a base, a top, a first sidewall and a second sidewall mounted thereon to form a cavity including an opening opposite the back plate. A plurality of filament positioning frames occupy the cavity to provide an organized distribution. Each of the filament positioning frames comprises a filament container having a filament clamp, in spaced-apart relationship from the filament container for gripping a plurality of filaments providing a plurality of filament tips extending from each filament clamp. Each of the filament positioning frames further comprises a frame between the filament container and the filament clamp. The frame has a first frame member parallel to a second frame member attached to the filament clamp with each of the plurality of filament tips located adjacent to the opening.

Abstract: Provided herewith is a chamber for depositing a film on a substrate comprising a process compartment; a purge compartment, a purge ring located on the chamber body to separate the two compartments, a heater, and a shadow ring covering the periphery of the substrate. Alternatively, the chamber may further comprise a shield interconnected with the shadow ring. Still provided is a method for depositing a film of uniformity on a substrate in such a chamber. The method comprises the steps of positioning the substrate in a process compartment; flowing a process gas into the process compartment; flowing a purge gas in a purge compartment; and exhausting the process and purge gas from the chamber, thereby depositing a film of uniformity on the substrate.

Abstract: A lid assembly for a semiconductor processing apparatus having at least two chambers comprises a lid plate having a first side and a second side and a plasma generation source mounted to the first side of the lid plate. Additionally, at least two gas boxes are coupled to the first side of the lid of the lid plate, and a divider is coupled between the plasma generation source and the at least two gas boxes.

Abstract: A differentially pumped deposition system is described that includes a deposition source, such as a magnetron sputtering source, that is positioned in a first chamber. The deposition source generates deposition flux comprising neutral atoms and molecules. A shield that defines an aperture is positioned in the path of the deposition flux. The shield passes the deposition flux though the aperture and substantially blocks the deposition flux from propagating past the shield everywhere else. A substrate support is positioned in the second chamber adjacent to the shield. The pressure in the second chamber is lower than a pressure in the first chamber. A dual-scanning system scans the substrate support relative to the aperture with a first and a second motion, thereby improving uniformity of the deposited thin fill.

Abstract: An apparatus for manufacturing an organic electroluminescence display having an alignment chamber for aligning a mask having openings corresponding to a predetermined pattern with a substrate on which a first electrode layer is formed and detachably attaching the mask and the substrate. The apparatus further including a number of vacuum processing chambers for sequentially forming a number of organic material layers on the substrate attached with the mask. The apparatus also including a transfer robot for transferring the attached mask and substrate to one of the number of vacuum processing chambers and sequentially transferring it between the number of the vacuum processing chambers.

Abstract: A method of analyzing factor responsible errors in a wafer pattern which enables detection of an error ascribable to a difference between mask patterns and an error ascribable to another reason while distinguishing between the errors. A mask pattern is formed by etching a first mask at a first position within an etching chamber. Another mask pattern is formed by etching a second mask at a second position within the etching chamber. A wafer pattern is formed by single shot of exposing radiation through use of the first mask, and another wafer pattern is formed by single shot of exposing radiation through use of the second mask. The size of the wafer pattern formed through use of the first mask and the size of the wafer pattern formed through use of the second mask are compared with each other, thereby detecting a dimensional difference ascribable to a difference between mask patterns and a dimensional difference ascribable to another reason while distinguishing between the dimensional differences.

Abstract: An alignment device for permitting a deposition mask to be positioned relative to a substrate to facilitate deposition of organic material on to the substrate which will be part of an organic light emitting device, including a base having a first set of alignment pins and a second set of alignment pins; a plate secured to the base; a frame having an opening aligned with the plate, the frame being formed with a first set of alignment pin receiving holes corresponding to the position of the first set of pins so that the frame is removably mounted to the base; the deposition mask and positioned on the plate; a transparent flat plate contacting the second set of pins and the deposition mask and being sized to expose portions of the deposition mask; and securing the exposed portions of the deposition mask to the frame.

Abstract: The present invention discloses a vacuum evaporation apparatus comprising a vacuum pump, an evaporation chamber and a power supply. The evaporation chamber comprises a substrate, an evaporation source and an evaporation mask. The evaporation mask exhibits a coefficient of thermal expansion substantially equal to the substrate, and the evaporation mask has a pattern of metal tracks. Thus, the apparatus of the present invention also can be applied to form solder bumps on a large sized silicon wafer. Moreover, the position pattern of the mask is formed by an anisotropic etching process; the diameter of the pattern will not be influenced by the thickness of the mask. Therefore, the tendency of the solder bumps with the smaller size and the pitch are met.

Abstract: A system and method for manufacturing thin-film structures disposed on a substrate. The thin-film structures have different respective thicknesses that vary along a radius of the substrate. A substrate rotates about an axis of rotation and a source of deposited material is directed at the rotating substrate. A mask having a stepped profile is positioned between the rotating substrate and the source. The stepped mask selectively blocks material emanating from the source from reaching the substrate. Each step of the profile of the mask corresponds to one of the respective thicknesses of the thin-film structures. The radius along which the different respective thicknesses of the film-thin structures vary is measured from the axis of rotation of the rotating substrate, and the substrate includes at least one wafer having a center that is either coincident or offset from the axis of rotation.

Abstract: The coating plant includes a device for running a sheet to be coated along a traveling path past a window for the evaporation or sublimation of elements A an B, sources for the evaporation or sublimation of elements A and element B placed successively in a direction parallel to the traveling path so as to emit elements A and B through the window and a screen for reducing the angle of emission from the source of element B below the limit represented by an entry edge of the window, the screen being mounted so as to move translationally perpendicular to the traveling path and to move along the traveling path between the source of element A and the source of element B so as to obtain either a -A-AB-A- or a -B-AB-B- coating.

Abstract: A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a metal surface such as aluminum or aluminum alloy, stainless steel, or refractory metal coated with a phosphorus nickel plating and an outer ceramic coating such as alumina, silicon carbide, silicon nitride, boron carbide or aluminum nitride. The phosphorus nickel plating can be deposited by electroless plating and the ceramic coating can be deposited by thermal spraying. To promote adhesion of the ceramic coating, the phosphorus nickel plating can be subjected to a surface roughening treatment prior to depositing the ceramic coating.

Abstract: A system for processing a wafer is provided. Ultraviolet light radiates through a first amount of oxygen gas in an ozone generation chamber so that the first amount of oxygen gas is converted to a first amount of ozone gas. The first amount of ozone gas flows from the ozone generation chamber into a loadlock chamber and a wafer is exposed to the first amount of ozone gas. The ultraviolet light also radiates through a window and then through a second amount of oxygen gas in the loadlock chamber so that the second amount of unconverted gas is converted to a second amount of ozone gas. The wafer held by the wafer holder is also exposed to the second amount of ozone gas.

Abstract: The invention is directed to an apparatus and method for reducing particulates in a semiconductor processing chamber. The apparatus comprises a shield for lining a portion of the interior of a vacuum processing chamber. The interior of the shield defines a shield passage. A heater element is disposed within the shield passage. A gas inlet is used for providing gases to the interior of the shield passage. The range of temperatures which may be used is wide and generally fitted to the process. For example, the invention may be used to provide a rapid cooldown or bakeout. Once the temperature is chosen, isothermal conditions can be maintained so as to minimize the thermal cycle stress, reducing cracking, peeling, etc.

Abstract: A system and method for manufacturing thin-film structures disposed on a substrate. The thin-film structures have different respective thicknesses that vary along a radius of the substrate. A substrate rotates about an axis of rotation and a source of deposited material is directed at the rotating substrate. A mask having a stepped profile is positioned between the rotating substrate and the source. The stepped mask selectively blocks material emanating from the source from reaching the substrate. Each step of the profile of the mask corresponds to one of the respective thicknesses of the thin-film structures. The radius along which the different respective thicknesses of the film-thin structures vary is measured from the axis of rotation of the rotating substrate.

Abstract: A structuring device (SD) for processing a surface of a substrate (SB), comprising a substrate chamber (VC) for mounting the substrate (SB) and a reaction chamber (GC) enabling a gas reaction at a given operating pressure. The reaction chamber (GC) has at least one gas inlet (GL) for a reaction gas and at least one injection outlet (JL) leading into the substrate chamber, while the substrate chamber (VC) is provided with a pumping system (PP) for maintaining a vacuum within the substrate chamber at a pressure not above the operating pressure of the gas reaction in the reaction chamber (GC). The injection outlet (JL) is provided with at least one injection pipe ending into an injection opening of given width, the injection pipe having a length not smaller than the width of the injection opening, the injection pipe forming the gas particles originating from the gas reaction into a gas jet streaming out of the injection opening.

Abstract: Apparatus and method to facilitate vapor phase coating of turbine airfoils. A dovetail receptacle receives the dovetails of a plurality of airfoils. The airfoils are separated by spacers with the airfoil dovetails sealed in a chamber of the receptacle to facilitate vapor phase coating of airfoil flowpath surfaces and platform upper surfaces of several airfoils simultaneously while masking the dovetail sections.

Abstract: A linear semiconductor material having a thin metal-oxide layer and a resist layer is conveyed at a constant speed by rotating rollers. An electron-beam drawing apparatus, in which micro-electron-guns are aligned circumferentially, is disposed between the rollers. The linear semiconductor material passes through a cylindrical hole of the electron-beam drawing apparatus such that a circuit pattern is formed on a surface of the linear semiconductor material by an electron beam. The linear semiconductor material is developed and etched, and divided into predetermined lengths. Thus a linear semiconductor is completed. A semiconductor device is manufactured by bundling a plurality of the linear semiconductors of predetermined length.

Abstract: A distribution mask including at least two separate blanking panels (22), one of which is mounted mobile. The two blanking panels (22) are substantially coplanar, and, controlled by a common control unit (23), both mounted continuously mobile between two extreme positions, namely, a close position, and for which the space (E) between them is minimal, and a spaced position, for which the space (E) is on the contrary at its maximum. The invention is particularly applicable to antiglare treatment of ophthalmic lenses.

Abstract: An apparatus for manufacturing a semiconductor device including the steps of: preparing a substrate having an insulating layer with a connection hole; forming a wiring layer covering the connection hole; and heating the substrate to a temperature equal to or higher than a temperature of fluidizing the wiring layer material and rotating the substrate in a direction of generating centrifugal force directing from an opening of the connection hole toward the bottom of the connection hole.

Abstract: The present invention provides a method for making a stain-resistant float glass and an apparatus for carrying out such a method. In keeping with this method, SO3 is applied to the upper surface of float glass in an amount efficacious to materially reduce staining of the upper surface of the glass. Optimally, SO3 gas can be applied directly onto the upper surface of the glass. An apparatus of the invention generally includes a downwardly open hood positioned above the upper surface of the glass and having walls defining an enclosure. SO3 gas (either as such or as a reactive mixture of S02 gas and an oxygen-containing gas) is delivered through a delivery tube to the enclosure.

Abstract: In a parallel-plate type plasma processing apparatus including an upper electrode having a plurality of gas introducing inlets and a support table serving as a lower electrode opposed to the upper electrode and having a silicon wafer thereon, the open ends of the inlets are expanded in their diameter directions.

Abstract: A thin film deposition apparatus and method are disclosed in this invention. The method includes a step of providing a vacuum chamber for containing a thin-film particle source for generating thin-film particles to deposit a thin-film on the substrates. The method further includes a step of containing a substrate holder in the vacuum chamber for holding a plurality of substrates having a thin-film deposition surface facing the thin-film particle source. The method further includes a step of providing a rotational means for rotating the substrate holder to rotate each of the substrates exposed to the thin-film particles for depositing a thin film thereon. And, the method further includes a step of providing a lateral moving means for laterally moving and controlling a duration of exposure time across a radial direction for each of the substrates for controlling thickness uniformity of the thin-film deposited on each of the substrates.

Abstract: A differentially pumped deposition system is described that includes a deposition source, such as a magnetron sputtering source, that is positioned in a first chamber. The deposition source generates deposition flux comprising neutral atoms and molecules. A shield that defines an aperture is positioned in the path of the deposition flux. The shield passes the deposition flux though the aperture and substantially blocks the deposition flux from propagating past the shield everywhere else. A substrate support is positioned in the second chamber adjacent to the shield. The pressure in the second chamber is lower than a pressure in the first chamber. A dual-scanning system scans the substrate support relative to the aperture with a first and a second motion, thereby improving uniformity of the deposited thin film.

Abstract: A gas turbine airfoil has an external surface and an internal passage therethrough. The internal passage is selectively coated by providing a source of a flowable precursor coating material in contact with the internal passage of the airfoil, and providing a coating prevention structure overlying at least a portion of the external surface. The flowable precursor coating material is flowed from the source of the flowable precursor coating material and through the internal passage of the airfoil. The coating prevention structure prevents contact of the flowable precursor coating material with the external surface of the airfoil.

Abstract: A method of forming a multi-layer structure over an insulating layer comprises the steps of: selectively depositing a barrier layer on a predetermined region of an insulating layer by use of a first deposition mask; selectively depositing a metal seed layer made of a metal which is different in substance from the barrier layer by use of a second deposition mask, so that the metal seed layer extends not only on an entire surface of the barrier layer but also a peripheral region positioned outside the predetermined region of the insulating layer; and forming a metal plating layer made of the metal as the seed layer, so that the metal layer is adhered on the metal seed layer whereby the metal plating layer is separated from the barrier layer and also from the insulating layer.

Abstract: A method and apparatus for correcting phase shift defects in a photomask is provided by scanning the photomask for the defect and determining locations of at least one defect. Following the determination of the location of a defect, the defect is three-dimensionally analyzed producing three-dimensional results. Utilizing the three-dimensional results, a focus ion beam (FIB) is directed onto the defect to eliminate the defect. The FIB is controlled by an etch map which is generated based on the three-dimensional results. To provide further precision to the repairing of the photomask, test patterns of the FIB are generated and three-dimensionally analyzed. The three-dimensional test pattern results are further utilized in generating the etch map to provide greater control to the FIB.

Abstract: In the chemical vapor deposition apparatus, a substrate stage for mounting a substrate is provided inside a reaction chamber of the apparatus. A source gas inlet for introducing a source gas and exhaust outlets and for exhausting the source gas are provided. Exhaust outlet valves provided for exhaust outlets are open and shut successively with time. The direction of the flow of source gas relative to the fixed substrate varies with time. The present chemical vapor deposition apparatus allows the improved evenness of film thickness, the composition ratio, and the like within the substrate surface as well as the reduction of particles of foreign substance generated inside the reaction chamber.

Abstract: A method and apparatus for fabricating a wafer spacing mask on a workpiece support chuck. Such apparatus is a central body containing a plurality of apertures that is positioned atop the workpiece support chuck and an outer ring shaped body positioned on a flange of the workpiece support chuck while material is deposited onto the apparatus and through the apertures onto chuck. Upon completion of the deposition process, the central body and ring shaped body are removed from the workpiece support chuck leaving deposits of the material to form the wafer spacing mask.

Abstract: When a substrate coated with a coating solution which oxidizes at high temperatures is heat-treated, an oxygen concentration of a treatment atmosphere is lowered when the temperature is low. Next, the substrate is heat-treated in the treatment atmosphere of which the oxygen concentration is lowered. Sequentially, the treatment atmosphere is returned to that with the original oxygen concentration after the passage of a predetermined time after completing the heat treatment. Thereby, the substrate can be heat-treated, with the oxidization of the coating solution being controlled.

Abstract: An apparatus for chemical vapor deposition includes a dispenser for dispensing a precursor to a vaporizer positioned within a vaporization chamber. A delivery conduit joins the vaporization with a process chamber. A flow meter is positioned within the delivery conduit for measuring the flow of precursor through the delivery conduit. A flow controller is likewise positioned within the delivery conduit for controlling the flow of precursor in response to the measured flow rate.

Abstract: A process of producing relatively large, dense, free-standing silicon carbide articles by chemical vapor deposition is enabled by the provision of specially designed isolation devices. These devices segregate silicon carbide deposits on the intended portions of substrates, thereby alleviating the need to fracture heavy silicon carbide deposits in order to remove, or otherwise move, the substrate, with the heavy deposit thereon, from the deposition furnace. The isolation devices enable the use of more efficient vertically extended vacuum furnaces. The isolation devices also enable the commercial production of relatively dense, large, thin-walled, silicon carbide shells.

Abstract: A collimator filter for a physical vapor deposition apparatus useful for coating semiconductor wafers includes a plurality of corrugated ribbons attached at abutting double-walled nodes by resistance spot welding. The nodes are sealed by application of a braze material to diverging wall portions of the nodes by extrusion or spraying, followed by heating in a vacuum furnace. Alternatively, the nodes may be sealed by application of a braze material foil to a top and a bottom surface of the collimator followed by heating in the vacuum furnace. By sealing the nodes, a significant reduction may be achieved in outgassing and generation of particulate contaminants.

Abstract: An ultraviolet-assisted chemical vapor deposition system for improving the adhesion, hardness, and thermal stability of organic polymer films deposited on semiconductor wafers is provided. The system includes an ultraviolet lamp and a tube-shaped monomer distribution system positioned over the wafer allowing ultraviolet irradiation of the wafer before, during and/or after deposition. Processes for depositing organic polymer films on semiconductor wafers are also provided. The processes include one or more depositions, one or more ultraviolet exposures, and one or more anneals.

Abstract: A substrate handling system auxiliary to a plasma sputtering system is described. The substrate handling system inserts an unprocessed substrate (e.g., an optical disk), an inner mask, and an outer mask into a loadlock of the sputtering system, and then seals the access opening to the loadlock. The substrate and the masks then are moved to a sputtering chamber where the substrate is coated by sputtering. Subsequently, the substrate handling system moves a processed substrate, and its accompanying inner mask and an outer mask, from the loadlock to an external disk change station, where the processed substrate is removed from the masks, which are still gripped by the substrate handling system. Subsequently, another unprocessed disk is placed on the inner mask and within the outer mask, and the sequence repeats. The substrate handling system only contacts the masks on surfaces thereof that are not subjected to direct sputter deposition, so that the masks can be gripped without causing particulate contamination.

Abstract: The present invention is directed to a process for forming composite films. The films are formed on a substrate by directing a gas containing reactant species onto the substrate. The composite film is formed from an interaction between two reactant species. At least a portion of the substrate remains within the purview of the plasma discharge while the composite film is formed on the substrate.

Abstract: To move an article in and out of plasma during plasma processing, the article is rotated by a first drive around a first axis, and the first drive is itself rotated by a second drive, so that the article enters the plasma at different angles for different positions of the first axis. The plasma cross-section at the level at which the plasma contacts the article is such that those points on the article that move at a greater linear velocity (due to being farther from the first axis) move longer distances through the plasma. As a result, the plasma processing time becomes more uniform for different points on the article surface. The direction of rotation of the first and/or second drive changes during processing to improve processing uniformity. The article is allowed to be processed with the plasma only during one-half of each revolution of the second drive.