Abstract: A method and apparatus for fabricating a wafer spacing mask on a workpiece support chuck. Such apparatus is a central body containing a plurality of apertures that is positioned atop the workpiece support chuck and an outer ring shaped body positioned on a flange of the workpiece support chuck while material is deposited onto the apparatus and through the apertures onto chuck. Upon completion of the deposition process, the central body and ring shaped body are removed from the workpiece support chuck leaving deposits of the material to form the wafer spacing mask.

Abstract: A light quantity correction filter that can implement the desired transmittance distribution precisely and easily without complicating an exposure system, a method of making the light quantity correction filter, and a method of manufacturing a color cathode ray tube using the light quantity correction filter are provided.

Abstract: This invention provides a method and apparatus for substantially eliminating deposition on the edge of a wafer supported on a pedestal in a processing chamber. Process gas flow onto the wafer surface is inhibited from reaching the wafer edge and backside, by means of a shadow ring placed over the wafer without touching it. Deposition on the edge and backside of the wafer are therefore substantially eliminated. The shadow ring defines a cavity which circumscribes the wafer edge, into which purge gas is flowed. This purge gas flows out from the cavity through the gap between the shadow ring and the upper surface of the wafer. Alignment pins are placed on the wafer supporting surface of the pedestal. These pins have sloping surfaces and are arranged to guide the wafer to a centered position on the pedestal when the wafer is placed on the pedestal. These pins also serve to align the shadow ring to the pedestal and thence to the wafer.

Abstract: An interface for connecting a first vacuum source to a first vacuum apparatus, and for selectively connecting the first vacuum source and the first vacuum apparatus to a second vacuum apparatus without venting the first vacuum apparatus. A third fitting is connected to the first vacuum source, and makes a hermetic seal between the first vacuum source and the interface. A vacuum source line, having a first end and a second end, is connected by its first end to the third fitting. The vacuum source line receives a vacuum from the first vacuum source, and conducts the vacuum through the vacuum source line. A first tee section, having a first end and a second end, is connected by its first end to the second end of the vacuum source line. The first tee section receives the vacuum from the vacuum source line and conducts the vacuum through the first tee section.

Abstract: A method and apparatus for fabricating a wafer spacing mask on a substrate support chuck. Such apparatus is a stencil containing a plurality of apertures and at least one high aspect ratio opening that is positioned atop the substrate support chuck while material is deposited onto the stencil and through the apertures and high aspect ratio openings onto the chuck. Upon completion of the deposition process, the stencil is removed from the workpiece support chuck leaving deposits of the material of various widths but the same heights to form the wafer spacing mask.

Abstract: A deposition apparatus includes a controllable edge exclusion assembly for controllably excluding deposition adjacent a peripheral edge of a wafer within a deposition chamber and based upon fluid flow. The controllable edge exclusion assembly includes a ring-shaped body extending inwardly from the peripheral edge of the wafer and spaced above an adjacent front surface of the wafer. The ring-shaped body has fluid passageways so that fluid flow from adjacent a back surface of the wafer passes over the peripheral edge of the wafer and through the fluid passageways to thereby exclude deposition adjacent the peripheral edge of the wafer. The assembly also includes a flow controller associated with the fluid passageways for controlling fluid flow therethrough. The flow controller may include a control body having a plurality of fluid passageways therein, and which is relatively movable with respect to the ring-shaped body.

Abstract: In a device for holding lenses for eye glasses to be coated (3,3′, . . . ) with a substrate holder (4) consisting of cap-like sheet-metal blanks (4a,b,c,d) forming a dish in the form of a spherical segment and having several drill-holes (5,5′, . . . ), rotating on a vertical axis (R) in the vacuum chamber (2) above a coating source (Q), the coating source (Q) being mounted to the side of the axis of rotation (R) and the lenses (3,3′, . . . ) being placed and held in the drill-holes (5,5′, . . .

Abstract: A mark shielding ring for use in a physical vapor deposition chamber and a method for using such ring are disclosed. The mark shielding ring may be suitably used for shielding alignment marks or any other marks provided on the top surface of a wafer along a peripheral region. The novel mark shielding ring includes an alignment means for mechanically joining a shielding ring to a wafer pedestal on which the ring is positioned. Any up-and-down motion of the wafer pedestal therefore does not change the alignment between the shielding ring and the pedestal and therefore the function of the shielding ring for protecting an alignment mark can be insured.

Abstract: A resist-processing apparatus comprising a plurality of first processing units, a second processing unit, a first transport unit, a second transport unit, and an interface section. The first processing units are designed to process a wafer, and the second processing unit to process the wafer. The first transport unit has a first arm mechanism for loading and unloading the wafer into and from each of the first processing units. The second transport unit opposes the first transport unit, with the first processing units located between the first transport unit and the second transport unit. The second transport unit has a second arm mechanism for loading and unloading the wafer into and from at least one of the first processing units and into and from the second processing unit. The interface section is to be provided adjacent to an exposure apparatus. The first arm mechanism transfers the wafer between the first transport unit and the exposure apparatus.

Abstract: A clamping ring design that eliminates the Wafer sticking problem. In the first embodiment of the present invention the wafer clamp ring is redesigned to sharply reduce the wafer to wafer-ring contact area. In the second embodiment of the present invention a clamp ring guide is added to prolong the lifetime of the clamp ring.

Abstract: To move an article in and out of plasma during plasma processing, the article is rotated by a first drive around a first axis, and the first drive is itself rotated by a second drive. As a result, the article enters the plasma at different angles for different positions of the first axis. The plasma cross-section at the level at which the plasma contacts the article is asymmetric so that those points on the article that move at a greater linear velocity (due to being farther from the first axis) move longer distances through the plasma. As a result, the plasma processing time becomes more uniform for different points on the article surface. In some embodiments, two shuttles are provided for loading and unloading the plasma processing system. One of the shuttles stands empty waiting to unload the processed articles from the system, while the other shuttle holds unprocessed articles waiting to load them into the system.

Abstract: Cr(CO).sub.6 gas is fed into a chamber, in which a photomask substrate having any clear deflect resulting from partial loss of a light-shielding film to fill the inside of the chamber with a Cr(CO).sub.6 gas atmosphere. By irradiating with a laser beam the clear defect of the photomask substrate in the Cr(CO).sub.6 gas atmosphere, the Cr(CO).sub.6 gas is decomposed to form a Cr film over the clear defect. Tetrakis dimethylamino titanium gas (TDMAT) is fed into the chamber to switch the atmosphere in the chamber to a TDMAT gas atmosphere. By irradiating with a laser beam the area of the photomask substrate, arranged in the TDMAT gas atmosphere, where the Cr film has been formed, the TDMAT gas is decomposed to form a TiN film, whose reflectance is smaller than that of the Cr film, over the Cr film.

Abstract: A shutter assembly located substantially within a thin-film processing chamber includes a plurality of articulatable components that are movable between open and closed positions within the chamber. The articulatable components are preferably arranged in the form of an iris to regulate a size of an opening centered along said central axis. The shutter assembly can be used to isolate transmissions between a process energy source such as a PVD target and a substrate or to limit a range of incidence angles at which the transmissions reach the substrate. The shutter apparatus of this invention does not add any area to the footprint of processing equipment, enables very fast shuttering between open and closed positions, and enables enhanced process control.

Abstract: For coating substrates (17,18,20,21,22) in a vacuum-coating chamber (2) the substrates are introduced by an air lock into the coating chamber (2) and moved along a transport path in front of the coating sources (50a,b,c,d) producing a coating cloud. To this end, the substrates (17,18,20,21,22) are led past the coating sources (50a,b,c,d) by means of holding devices (24) arranged movably on a transport belt (9) during at least two successive coating phases. During the one coating phase, the substrates (17,18,20,21,22) are oriented along one transport direction T.sub.3 oriented towards the coating sources (50a,b,c,d) such that essentially the substrate bottom of the cylindrical substrate is coated. During the subsequent second coating phase, the substrates are oriented in front of the coating sources (50a,b,c,d) in a direction T.sub.4 opposite the transport direction T.sub.3, wherein the substrates (17,18,20,21,22) are oriented such that essentially the cylindrical side surface is coated.

Abstract: An apparatus for use in the deposition of oxide on a wafer, the apparatus including a chamber for receiving oxygen gas that is used for forming the oxide on the wafer, the apparatus comprising: a wafer chuck located within the chamber, the wafer chuck capable of supporting the wafer during the deposition of oxide on the wafer; and an oxide blocking member located within the chamber and detached from the wafer, the oxide blocking member capable of preventing the deposition of oxide in at least one predetermined area of the wafer.

Abstract: Solvent-free lubrication of thin film magnetic media, such as magnetic discs, is implemented by applying collimated and/or non-collimated beams of lubricant molecules, including polymeric lubricants having a known and narrow molecular weight distribution to selected regions of the media surface, such as the landing zone. Embodiments include providing in-situ and on-demand fractionation of polymeric lubricants.

Abstract: A mask with a microscopic pin-hole having a circular configuration with a diameter of 1 nm to 10 .mu.m or a rectangular configuration with a side of 1 nm to 10 .mu.m is arranged opposite to a substrate. A magnetic material composing a magnetic microdevice is deposited on the substrate through the pin-hole of the mask to form the magnetic microdevice having fine structure on the substrate. By moving the substrate and mask relative to each other in an X-Y plane parallel with the surface of the substrate in a stepwise manner, a plurality of microelements may be formed on the substrate in a matrix form. By moving the substrate and mask relative to each other during the deposition, an elongated microelement may be formed. The rectangular pin-hole of the mask is formed by stacking grid-meshes for use in an electron microscope such that rectangular openings formed in the gridmeshes are aligned in a diagonal direction. The mask may be formed by a diaphragm for use in a transmission electron microscope.

Abstract: Powdery Cr(CO).sub.6 is stored in a reservoir, into which Ar gas, under flow rate control by a flow rate controller, is introduced. On the other hand, He gas, whose molecular weight differs from that of Ar gas, is also introduced into the reservoir under flow rate control by another flow rate controller. These Ar and He gases are used as carrier gases for feeding a reactive gas into a chamber. The reservoir sublimates the powdery Cr(CO).sub.6 stored therein. The Cr(CO).sub.6 obtained by sublimation is carried by the Ar and He gases which are introduced into the reservoir, and supplied onto a substrate in the chamber. The substrate is irradiated with a laser beam. This irradiation with the laser beam decomposes the Cr(CO).sub.6 gas to form a film of metallic chromium on the substrate.

Abstract: A method, apparatus and carrier for coating a CRT screen after assembly. The method and apparatus includes isolating a surface portion of the CRT to be coated from the remaining surface to prevent or minimize coating problems resulting from outgassing or difficulty in controlling coating process parameters and to isolate noncompatible components from the deposition environment.

Abstract: A readily removable deposition shield assembly for processing chambers such as chemical vapor deposition (CVD), ion implantation, or physical vapor deposition (PVD) or sputtering chambers, is disclosed. The shield assembly includes a shield member which is mounted to the chamber for easy removal, such as by screws, and defines a space along the periphery of the substrate support. A shadow ring is inserted into the peripheral space and is thus mounted in removable fashion and is automatically centered about the substrate by an alignment ring. The alignment ring removably rests upon a flange extending from the outer periphery of an electrostatic chuck. The shadow ring overlaps the cylindrical shield member, the alignment ring and the peripheral edge of a substrate retained by the chuck. Collectively, these components prevent deposition on the chamber and hardware outside the processing region.

Abstract: A metallized film capacitor formed by laminating or winding a metallized film 1 with metal evaporated electrode on one or both sides thereof so that a pair of metal evaporated electrodes 2 are opposite to each other, wherein electrode lead-out portions 3 are provided at both ends of the capacitor, each metal evaporated electrode is composed of a low resistance area abutting on the electrode lead-out portion and a remaining high resistance area having higher resistance than it, a split electrode pattern with a plurality of minute blocks 8 formed in a longitudinal direction and width direction and fusing areas 9 between the adjacent minute blocks is formed on at least one of the metal evaporated electrodes, and electrode partitioning lines 7 are formed at regular intervals in a longitudinal direction of the film.

Abstract: Methods and apparatus for the preparation of a substrate having an array of diverse materials in predefined regions thereon. A substrate having an array of diverse materials thereon is generally prepared by depositing components of target materials to predefined regions on the substrate, and, in some embodiments, simultaneously reacting the components to form at least two resulting materials. In particular, the present invention provides novel masking systems and methods for applying components of target materials onto a substrate in a combinatorial fashion, thus creating arrays of resulting materials that differ slightly in composition, stoichiometry, and/or thickness. Using the novel masking systems of the present invention, components can be delivered to each site in a uniform distribution, or in a gradient of stoichiometries, thicknesses, compositions, etc.

Abstract: A etcher (10) has an inner chamber (22) that is in communication with a collection chamber (17). A cover (33) is made from a substrate (11) and an outer housing (34). The cover (33) is attached to the etcher (10) so that the substrate (11) is suspended over the inner chamber (22). A recirculating system (29) is used to pass an etchant through a filter, into the inner chamber (22), across the substrate (11), into the collection chamber (17), and into a reservoir.

Abstract: A wafer carrier/susceptor combination for use in an epitaxial deposition process has a configuration which provides greater thermal conductivity between the susceptor and the wafer carrier in regions substantially underlying the wafers than in regions not underlying the wafers. This difference in thermal conductivity is produced by configuring the wafer carrier or susceptor so that the lower surface of the wafer carrier is disposed closer to the susceptor in regions substantially underlying the wafers than in at least some regions not underlying the wafers. By controlling the thermal conductivity so that it is greater in certain regions than in other regions, the temperature difference between the wafers and the surface of the wafer carrier can be reduced, and a more uniform temperature distribution across the surface of the wafer can be achieved. As a result, the combination may be used to deposit a more uniform coating across the entire surface of each wafer.

Abstract: The present invention is directed to providing thin-film-coated substrate manufacturing methods and apparatus that make it possible to manufacture large thin-film-coated substrates such as anti-reflection filters using relatively small production facilities. The thin-film-coated substrate manufacturing methods pertaining to the present invention area capable of producing thin films on substrates to be coated as large as the film formation area by using a film formation monitor or monitors placed outside of the film formation area or displaceably mobile therein, measuring the thickness of the monitor thin film or films formed on the film formation monitor or monitors, and controlling the film coating process based on the measured thickness of the monitor thin film or films. It is also capable of increasing the productivity of the manufacturing process through increased flexibility in the arrangement of substrate or substrates to be coated inside the film formation area.

Abstract: A deposition-preventing part, particularly a masking tool, which is used over an area to be protected from adhesion of a physical vapor deposition film, for physical vapor deposition apparatuses which are used to form physical vapor deposition films of metals, particularly noble metals, on CD-ROM, CD-R or CD-E substrates. One or more of a solder-plated Cu wire, a solder-plated Cu foil tape, an Al foil tape and a synthetic resin tape are attached, in a peelable manner, on a solder film formed on the surface of the substrate of a deposition-preventing part such as a masking tool, which has a surface roughness of 0.01-1 .mu.m when expressed as the arithmetic mean roughness defined according to JIS B 0601, a thickness of 5-100 .mu.m and a melting point of 100-450.degree. C.

Abstract: This invention includes an apparatus for heating a deposition material to form a vapor that may be deposited on a polymer film and thereby create a holographic film or similar material. A system and a method for producing such a film is also provided. Included within this system is a vaporizer that has an adjustable aperture. By adjusting the size of the aperture, the flow rate of the vapor from the vaporizer can be adjusted to achieve a desired flow rate. A heat source in thermal communication with the vaporizer may also be employed in the system to heat the deposition material to form a vapor. The vaporizer may be disposed within a vacuum chamber, which has a feed roll and a take up roll. As film is transferred from the feed roll to the take up roll, the vapor is deposited on the film. With the vaporizer of this invention, feed rates of about 1,500 fpm have been achieved.

Abstract: An exclusion ring system for depositing a film with multiple exclusion zones on a substrate in a deposition apparatus having a pedestal for supporting the substrate at different positions. A first exclusion ring is positioned above the substrate and pedestal and extends over a first zone overlying the perimeter of the substrate up to a first inner periphery. A second ring is positioned between the first ring and the substrate and extends over a second zone overlying the perimeter of the substrate outwardly of the first zone to a second inner periphery lying outwardly of the first inner periphery. When the pedestal is in a raised position, it supports the rings. When the pedestal is in a lowered position, the rings are supported by legs resting on a stationary wall, the legs of the first ring being effectively longer than the legs of the second ring so that the rings are sequentially moved away from the substrate as the pedestal is lowered.

Abstract: An apparatus, system and method for controlling parameters attending the emission of a vaporized material from a source in a HV environment utilizes at least one shutter which is rotatably mounted over an exit opening through which vaporized material must exit the source. The shutter has a closure portion and is mounted adjacent the exit opening associated with the source for rotation about an axis so that by rotating the shutter about the rotation axis, the closure portion repeatedly covers and uncovers the exit opening in an intermittent fashion to prevent the emission of a vaporized material from the source during the periods of shutter rotation during which the exit opening is covered by the closure portion and to permit the emission of a vaporized material from the source during the periods of shutter rotation during which the exit opening is uncovered by the closure portion.

Abstract: This invention provides a method and apparatus for supporting a wafer in a processing chamber, where the wafer is supported and heated from below via a heater pedestal having a diameter larger than that of the wafer. A process fluid flowing downward toward the top of the wafer is inhibited from depositing near the wafer edge by a shadow ring. The shadow ring, which is placed over but does not contact the wafer, physically masks an annular strip of the wafer near its edge. The shadow ring inhibits deposition of process fluides on the wafer in two distinct ways. First, the shadow ring physically obstructs process gas, flowing downward from above the wafer, from depositing on the masked portion of the wafer. Second, the shadow ring is used to direct a flow of a purge gas to inhibit process gas from seeping under the shadow ring and depositing near the wafer edge. A purge gas manifold is defined by a cylindrical annulus located concentrically below the shadow ring and circumscribing the heater pedestal.

Abstract: The present invention provides a method and apparatus for limiting residue build-up by lining with a ceramic material the exhaust plenun and exhaust manifold of a processing chamber. In another aspect of the invention, the inventors have used an air gap between the ceramic liner and the processing chamber walls to increase the dielectric value of the ceramic liner, and further inhibit the build-up of residues. In another aspect, the ceramic liner has been found to retain sufficient heat to allow the elimination of heaters typically used to heat the aluminum walls during a clean operation, if the clean operation is commenced immediately after a process step so that the ceramic retains the necessary heat from the previous processing step. The provision of an air gap aids in this heating, preventing the ceramic heat from being drawn off by direct contact with the aluminum walls. In a preferred embodiment, the ceramic liners are attached to the chamber walls with TEFLON.RTM. (polytetrafluoroethylene) screws.

Abstract: A insulating part for use in a plasma reactor, particularly as a support for an electrically floating shield in a plasma sputtering reactor. The insulating part is composed of a metallic base and a partial surface covering of a ceramic insulator, such as alumina. Preferably the ceramic coating is deposited by thermal spraying. The insulating part can be easily affixed to other metal parts in the chamber by use of fastening means such as screws applied to the uncoated portions of the part. When the insulating part is used as an isolator to support but electrically isolate a second metal part, the second metal part may rest on the ceramic coating with the insulating part screwed to the chamber wall or other metal support member.

Abstract: A chamber for depositing a film layer on a substrate includes a support member on which the substrate is positioned for processing in the chamber, and a clamp ring suspended in the chamber on a chamber shield. The support member is positionable in the chamber to receive a substrate thereon, and further positionable to pass the substrate through the shield and thereby lift the clamp ring off the shield. After deposition is complete, the support member retracts through the shield, to reposition the clamp on the shield. In the event that a deposition material layer has formed between the substrate and the clamp ring, the clamp ring includes a plurality of actuators thereon which force the substrate out of the clamp ring as the clamp ring is repositioned on the shield.

Abstract: A method and apparatus for fabricating a wafer spacing mask on a workpiece support chuck. Such apparatus is a plate containing a plurality of apertures that is positioned atop the workpiece support chuck while material is deposited onto the plate and through the apertures onto chuck. Upon completion of the deposition process, the plate is removed from the workpiece support chuck leaving deposits of the material to form the wafer spacing mask.

Abstract: Apparatus for limiting the rotation of a deposition ring relative to a substrate support. Specifically, the deposition ring is rotatably affixed to the substrate support. In a first embodiment of the apparatus, an anti-rotation pin is affixed to a deposition ring that circumscribes a substrate support such as an electrostatic chuck. An anti-rotation bracket is attached at a first end to the substrate support. A second end is coupled to the anti-rotation pin. As such, the deposition ring has some degree of freedom to adjust to thermal expansion of the deposition ring and the substrate support; however, the deposition ring is prevented by the interaction of the anti-rotation pin and bracket from rotating to a point where the deposition ring becomes stuck to the substrate support. In an alternative embodiment of the apparatus, a anti-rotation pin or bump is formed on the underside of the deposition ring.

Abstract: A substrate holder and mask system for depositing curved films and mirrors on flat mirror substrates. A spherical mask is held in close proximity to a substrate by a support structure to intercept a fraction of vapor from a distant source. The film deposited on the substrate behind the mask has a spherically symmetric curvature when the source has a large area. The cross section of the mask support structure is made as small as possible to minimize irregularities in the spherical figure. A mirror is subsequently deposited on said curved substrate after removing said mask.

Abstract: The present invention provides a method and apparatus for protecting the edge of a substrate and securing the substrate to the support member during processing. The present invention preferably provides minimal contact with the substrate and provides improved edge exclusion. Support tabs extend inwardly from the lower roof surface to support the apparatus on the substrate and the inner terminus of the apparatus approaches the edge of the substrate to provide the improved edge exclusion. A variable height lower roof surface is provided over the edge of the substrate to provide an effective increased roof aspect ratio (width of the roof:height of the roof above the substrate) over the edge of the substrate which reduces the likelihood that a bridging layer will form between the apparatus and the substrate or beyond the substrate.

Abstract: The present invention relates to an improved fixture for facilitating the coating of workpieces such as turbine blades and vanes. The fixture has a hollow core member and a plurality of workpiece receptacles positioned along the length of and about the periphery of the core member. Each of the workpiece receptacles comprises an open sided workpiece support structure and a cover for closing the open side of the support structure. During the coating operation, the fixture of the present invention is rotated about its longitudinal axis while the workpieces being coated remain stationary within the receptacles.

Abstract: The invention provides an apparatus and method of monitoring a CVD process and providing an alarm signal normally used to terminate the CVD process in response to detecting the simultaneous occurrences of a command to initiate the CVD process, the initiation of the flow of a reactive process gas into the process chamber and the motion of a turret supporting the workpiece.

Abstract: A fixture (90) for use in selectively applying a protective coating to a gas turbine engine blade (10) includes a base (92) having a blade retention slot (102), and a disposable shield (110). The shield (110) includes a sheet metal sleeve (112) and a cap (114) having a window (116) the cap being affixed to one end of the sleeve. When fully assembled with the blade properly positioned in the fixture only those portions of the blade selected to be coated are exposed. Additional features such as a locator dowel (104) extending from the floor of the slot and mutually cooperative track (121) and nub (122) assist in locating the blade correctly in the fixture and orienting the window with respect to the blade platform (16). A lock exemplified by a groove (128) and the nub (122) resists separation of the shield from the base during coating operations.

Abstract: A method and apparatus for producing a pattern of nucleation sites is disclosed. The method enables the growth of single crystal layers of a desired orientation on a suitable amorphous and/or non-single crystal surface. The method can be used to produce single crystal Si layers of a desired orientation on an amorphous layer, e.g. of SiO.sub.2 or Si.sub.3 N.sub.4. The method can provide for growth of (100) crystal orientation on SiO.sub.2. Semiconductor films may be accordingly grown on amorphous glass substrates for producing solar cells of high efficiency. A pattern of nucleation sites is created in amorphous layers, e.g. SiO.sub.2 on an IC wafer, by high-dose implantation through a single crystal mask having appropriate channeling directions at the desired lattice constants. Such implantation may be performed in a conventional ion implanter. Subsequent to creation of spaced-apart nucleation sites, epitaxial Si may be grown on such an SiO.sub.2 surface by CVD of Si.

Abstract: An apparatus and method for precisely calibrating the transfer arm of a multiple station wafer processing system without breaking vacuum and with a minimum of system downtime is provided. A system of determining and properly aligning the crystallographic orientation of the wafers before processing as well as monitoring the orientation of individual wafers during wafer transfer between processing stations is also provided.

Abstract: A structure and method is described for securing an overspray shield in processing chambers in the wall sandwich of the chamber or using a dimensionally compliant floating spacer ring to elastically clamp the overspray shield in position in a vacuum substrate processing chamber without the use of removable fasteners. The configuration uses the differential pressures between the inside and outside of the chamber to clamp the overspray shield along with its shield clamping assembly components at a spacer position in the chamber. The spacer position is generally interior to vacuum sealing limits of the chamber. The arrangement is such that if misalignment occurs a good vacuum-type seal cannot be achieved unless the parts are moved to correct alignment. When correctly aligned the overspray shield is tightly held to the processing chamber wall and electrical continuity between the processing chamber wall and the overspray shield is assured throughout expected process conditions.

Abstract: A method, apparatus and carrier for coating a CRT screen after assembly. The method and apparatus includes isolating a surface portion of the CRT to be coated from the remaining surface to prevent or minimize coating problems resulting from outgassing or difficulty in controlling coating process parameters and to isolate noncompatible components from the deposition environment.

Abstract: A chamber for depositing a film layer on a substrate includes a support member on which the substrate is positioned for processing in the chamber, and a ring assembly suspended in the chamber on a chamber shield. The ring assembly comprises first and second rings, the second ring being disposed intermediate the first ring and the substrate. The support member is positionable in the chamber to receive a substrate thereon, and further positionable to pass the substrate through the shield and thereby lift the ring assembly off the shield. After deposition is complete, the support member retracts through the shield, to reposition the outer ring on the shield. The inner ring continues to move downwardly with the substrate support member a short distance before it is repositioned on the shield.

Abstract: Structural components (2), such as turbine blades (16) partially to be coated, for example with precious metal coatings, are inserted into a circumferential pocket on a carrier wheel (8), so that surface areas (10, 10A) protruding radially outwardly are presented for a coating operation, for example by vapor deposition, gas diffusion, plasma spraying, or sputtering, while surface portions (9) of the components within the wheel are protected against coating by wheel disks (8A, 8B). The wheel is rotated either continuously or stepwise through an active coating chamber (3). Surfaces to be coated participate in forming first and second walls for enclosing a coating space (11). Other walls of the space (11) are formed by one or two coating sources (12, 13), such as cathode sputterers, whereby the need for screens or masks (4, 14) that form the remaining walls of the space (11) are minimized. The bottom (59) of the space (11) is preferably formed by wall portions (4A) of the turbine blades (16).

Abstract: A system for sputtering a substrate is disclosed. The system includes a central housing having at least one process module for forming the layer, wherein the process module is in fluid communication with the central housing and includes a first device used in conjunction with forming the layer on the substrate. In addition, the system includes at least one service module in fluid communication with the central housing, wherein the service module includes at least one replacement device suitable for replacing the first device. The central housing includes a robotic element for transporting the first device from the process module to the service module and for transporting the replacement device from the service module to the process module in order to replace the first device. In addition, the service module includes a dedicated pump for evacuating the service module to a high vacuum in order to reduce surface outgassing of the replacement device to a desired level before use.

Abstract: An apparatus for applying a metal-oxide coating to hot, freshly formed glass containers. The apparatus includes a tunnel including spaced apart sidewalls, a conveyor for conveying hot, freshly formed glass containers through said tunnel, and a vapor distributor. The vapor distributor includes a series of alternating vapor inlets and vapor outlets arranged along each side wall of the tunnel. Each vapor inlet along one side wall of the tunnel is positioned opposite to a vapor outlet on the other side of the tunnel. Moreover, each vapor inlet and vapor outlet has a pivoted baffle positioned internally thereof, the pivoting of the baffle being effective to vary the vertical extent of an opening of the inlet and the outlet, and each vapor outlet having an adjustable flow divider internally thereof for dividing the vapor flowing into the vapor outlet into a first portion to be exhausted from the tunnel and a second portion to be recirculated through the vapor inlet into the tunnel.

Abstract: Apparatus and method for coating hot glass bottles are improved by providing a controlled non-turbulent air supply directed downward across the coating material stream. The apparatus has a relocated blower for delivering process fluid (e.g. air) into an end of a plenum upper chamber, passing the air first through an permeable attenuator, then into a lower plenum chamber and finally through a diffuser plate to provide a uniform stream of process air directed downward across the coating-material stream into the finish region of the bottle. In the method, process air is blown to a plenum, through an angled attenuator plate with small holes to distribute the process air evenly and to avoid standing waves and regions of high or low air velocity. Several attenuator plates can be juxtaposed to permit removal of particulates by movement of the plates relative to each other. An iris or throttle valve after the blower can be used as an additional method of controlling the force and velocity of process air.

Abstract: The present invention relates to an improved fixture (70) for masking a portion of an airfoil (12) during coating operations. The fixture (70) includes a masking member (54) and a clamp (74) for forcing the masking member (54) into contact with the portion of the airfoil (12) requiring masking.