Abstract: A method and system for utilizing a gas injection plate comprising a number of shaped orifices (e.g., sonic and simple orifices, and divergent nozzles) in the gas inject system as part of a plasma processing system. By utilizing the shaped orifices, directionality of gas flow can be improved. This improvement is especially beneficial in high aspect ratio processing.

Abstract: A device to fix a substrate for a thin film sputter, includes a mask, a mask pressing plate, a magnetic body, and a driving unit. The mask having patterns is positioned under the substrate so as to form the patterns on the substrate. The mask pressing plate is positioned over the substrate and moves toward and contacts a back surface of the substrate at a predetermined pressure. The magnetic body is placed over the mask pressing plate and moves toward the mask pressing plate so as to have the mask adhere closely to the substrate by a magnetic force of the magnetic body. The driving unit applies a driving force to move the magnetic body. Where the mask pressing plate descends, the mask pressing plate adheres closely to the substrate. Thereafter, the magnetic body descends toward the back surface of the substrate which is supported by the mask pressing plate. The mask underneath the substrate adheres closely to a front surface of the substrate by the magnetic force of the magnetic body.

Abstract: The invention provides an MOCVD apparatus and a MOCVD method which can deposit a thin film having satisfactory properties by reducing or preventing temperature decrease of a source gas. An MOCVD apparatus according to the present invention supplies a source gas, as a mixture of an MO source gas, with an oxidizing gas to a substrate to thereby form a film. The MOCVD apparatus includes a substrate holder to hold the substrate; a deposition chamber to house the substrate holder; a supply mechanism to supply the source gas to a surface of the substrate; and a heating device to heat the substrate held by the substrate holder. The deposition chamber includes a substrate housing unit to house the substrate holder holding the substrate, and a passage housing unit connected to the substrate housing unit and constituting a passage to supply the source gas to the substrate.

Abstract: Embodiments of the present invention relate to a method and apparatus for rapid delivery of pulses of one or more reactants to a substrate processing chamber. One embodiment of a valve body includes a first inlet, a second inlet, and an outlet. A valve chamber is in fluid communication with the first inlet, the second inlet, and the outlet. A valve seat is formed at least around the first inlet. The valve chamber further includes an annular groove formed around the valve seat coupling the second inlet and the outlet. One embodiment of a pneumatic valve assembly includes a valve body having at least two ports. A valve seat surrounds one of the ports. The pneumatic valve assembly further includes a diaphragm assembly having a diaphragm movable to open and close the one port. A piston housed in a cylinder is coupled to the diaphragm to actuate the diaphragm. An actuation chamber is formed between the cylinder and the piston. In certain embodiments, the internal volume of the actuation chamber is about 3.

Abstract: A deposition shield partially covering a substrate and having two zones of different thermal properties can provide minimal deposition on the shield together with minimal heat loss due to substrate contact. A zone of low thermal transmittivity is contact shielding the substrate, and due to the low thermal transmittivity property, there is minimal heat loss of the heated substrate, resulting in a more uniform temperature profile and a more uniform film deposition. A zone of high thermal transmittivity is in the rest of the shield, allowing thermal energy from the heated substrate to transmit through, resulting in a cooler shield and minimal deposition on the shield.

Abstract: The present invention provides an efficient thin film forming apparatus which is capable of correcting a film thickness so as to take care of a variation in distribution in the film thickness and to take care of the circumferential distribution of the film thickness, as well as a method for forming a thin film using this film forming apparatus.

Abstract: A shadow frame and framing system for semiconductor fabrication equipment comprising a rectangular frame having four edges, the edges forming an interior lip with a top surface and an bottom engagement surface; and a cross beam disposed between at least two edges of the frame, the cross beam having a top surface and a bottom engagement surface, the engagement surface of the cross beam configured to be flush with the engagement surface of the lip; wherein one or more of the engagement surfaces are configured to cover metal interconnect bonding areas on a carrier disposed below the frame. The shadow frame is particularly useful in plasma enhanced chemical vapor deposition (PECVD) applications used to make active matrix liquid crystal displays (AMLCDs) and solar cells.

Abstract: A mask frame assembly includes a frame having an opening and a mask having at least two unit mask elements. Both ends of each unit mask element are fixed to the frame in a state of tension. The unit mask elements include a unit masking pattern, and overlap each other on a predetermined width to form a single mask pattern block. Each unit mask element has a recessed wall in an overlapping portion thereof so as to maintain the thickness of the mask constant at an overlap between the unit mask elements. Accordingly, the mask frame assembly reduces distortion in an evaporation pattern due to an increase in the size of a mask pattern, facilitates the adjustment of a total pitch of evaporation patterns, and prevents evaporation from occurring at undesired positions.

Abstract: A porous substrate having a concave inside face and an outside face is disposed in an enclosure, and reactive gas is introduced into the enclosure to densify the substrate. At least a portion of the gas is divided into two non-zero fractions. The first fraction of the gas is fed to the inside face of the substrate. The second fraction of the gas is fed to only the outside face of the substrate. Alternatively, the first fraction of the gas is fed via a tooling extending into an inside volume defined by the concave inside face of the substrate.

Abstract: This invention relates to a shutter for use in physical vapour deposition apparatus having a chamber. The shutter, generally indicated at 5, is located in a side housing 6 of the vacuum chamber 7, whilst sputtering is taking place. Once the substrate 2 is treated, the substrate is removed from the chamber and the shutter is brought in to an operative position above a wafer pedestal or support 1. The shutter is mounted on an arm 8 using a fixing boss 10, the arm and the boss being magnetically coupled.

Abstract: Systems and methods for providing in situ, controllably variable concentrations of one, two or more chemical components on a substrate to produce an integrated materials chip. The component concentrations can vary linearly, quadratically or according to any other reasonable power law with one or two location coordinates. In one embodiment, a source and a mask with fixed or varying aperture widths and fixed or varying aperture spacings are used to produce the desired concentration envelope. In another embodiment, a mask with one or more movable apertures or openings provides a chemical component flux that varies with location on the substrate, in one or two dimensions. In another embodiment, flow of the chemical components through nuzzle slits provides the desired concentrations. An ion beam source, a sputtering source, a laser ablation source, a molecular beam source, a chemical vapor deposition source and/or an evaporative source can provide the chemical component(s) to be deposited on the substrate.

Abstract: An electron-emitting device manufacturing method comprising a gas removal step of removing a gas dissolved in a liquid containing a formation material of an electroconductive film in which an electron emitting area is to be formed, a temperature adjusting step of adjusting a temperature of the liquid from which the gas is removed, and a droplet discharge step of discharging droplets of which the temperature is adjusted by droplet discharge means in an ink jet manner, while controlling relative positions of the droplet discharge means and a substrate on which the electroconductive film in which the electron-emitting area is to be formed is formed. The droplets are thereby applied to a predetermined position on the substrate.

Abstract: Disclosed herein is a method of roughening a ceramic surface by forming mechanical interlocks in the ceramic surface by a chemical etching process, a thermal etching process, or a laser micromachining process. Also disclosed herein are components for use in semiconductor processing chambers (in particular, a deposition ring for use in a PVD chamber) which have at least one ceramic surface having mechanical interlocks formed therein by chemical etching, thermal etching, or laser micromachining. Ceramic surfaces which have been roughened according to the chemical etching, thermal etching, or laser micromachining process of the invention are less brittle and damaged than ceramic surfaces which are roughened using conventional grit blasting techniques. The method of the invention results in a roughened ceramic surface which provides good adherence to an overlying sacrificial layer (such as aluminum).

Abstract: A second metal mask (13) having a screen part (13A) provided with a plurality of parallel, fine slits (13a) arranged at very small intervals is placed on a base plate (12) serving also as a first metal mask and provided with a plurality of windows (18) defining regions in which a material is to be deposited. One end of the second metal mask (13) is fastened to the base plate (12) by a mask clamp (20) and the other end of the same is fastened to a slider (23). Resilient force is applied to the slider (23) by compression coil springs (30). Thus, the screen part (13A) of the second metal mask (13) is tensioned and thereby the slits (13a) are stretched straight and are extended at predetermined pitches. A substrate (17) placed on the second mask (13) is subjected to a vacuum evaporation process to form fine patterns on the substrate (17) in a gang-patterning mode.

Abstract: A deposition apparatus for organic light emitting devices. The deposition apparatus includes a substrate conveying system and at least a chamber. In this case, the substrate conveying system is a circular turntable shape. The chambers are provided around the substrate conveying system in a specific order. While the substrate conveying system rotates in a circular direction, at least a substrate is transferred into the chambers for deposition. The substrate carrier, a shadow mask and a shadow mask alignment system, are positioned on the substrate carrier. After the deposition, at least a layer is deposited on each of the substrates, so as to manufacture at least an organic light-emitting device.

Abstract: An electrode arrangement for the plasma-aided coating of a substrate (3) with a layer of material comprising at least one first and a second material component and for the production of a plasma discharge, more especially an arc discharge (35), having an anode arrangement (5), which provides the first material component at an anode material surface (13) for evaporation, and a cathode arrangement (7), which provides the second material component at a cathode material surface (25). The electrode arrangement is characterized in that the cathode material surface (25) is constituted by an evaporation-active part (27) supporting the plasma discharge (35) and an evaporation-inactive part (41) not supporting the plasma discharge. Preferably, a motion-producing means (49) is provided for moving the evaporation-inactive part (41) over the cathode material surface (25) in order to reduce deposit of material due to he first material component on the cathode material surface (25).

Abstract: A method for producing an organic electroluminescent device, which is provided with first electrodes formed on a substrate, a thin film layer formed on the first electrode containing at least an emitting layer composed of an organic compound and a plurality of second electrodes formed on the thin film layer, and has a plurality of luminescent regions on said substrate, comprising the steps of forming spacers having a height at least partially exceeding the thickness of said thin film layer on the substrate, and vapor-depositing a deposit for patterning while the shadow mask having reinforcing lines formed across its apertures is kept in contact with said spacers. Highly precise fine patterning can be effected under wide vapor deposition conditions without degrading the properties of organic electroluminescent elements, and high stability can be achieved by a relatively simple process without limiting the structure of the electroluminescent device.

Abstract: A mask for vacuum deposition cthat is held by a mask frame is provided. The mask comprises a mask body for deposition; a guide member fixed to at least one side of the mask body for deposition; and tension applying means that, when the guide member is held by the mask frame, applies a predetermined tension to the mask body for deposition via the guide member.

Abstract: In evaporating thin film used in organic electro-luminescent (EL) display, a mask having a plurality of openings is placed below a display substrate, and a plane evaporation source is placed below the mask. The plane evaporation source has a plurality of evaporating material cells which are respectively aligned to the openings of the mask. Next, evaporating the evaporating material cells, a plurality of thin films is deposited on predetermined regions of the display substrate.

Abstract: A processing apparatus is used for processing a workpiece such as a semiconductor wafer. The processing apparatus comprises a cover for covering a portion of a surface, to be processed, of a workpiece, a process chamber formed by the cover and the surface, to be processed, of the workpiece, and a sealing portion provided between the cover and the surface of the workpiece for sealing the process chamber.

Abstract: A mask frame assembly used in vacuum deposition of thin films of an organic electroluminescent device. The mask frame assembly includes a frame having an opening and at least two unit masks which each have at least one unit masking pattern portion in the direction of the unit mask and two edges which are fixed to the frame under tension.

Abstract: A component for a vacuum deposition apparatus comprises a component body and a spray deposit formed on a surface of a component body. A spray deposit has surface roughness in which a mean spacing S of tops of local peak of profile is in the range from 50 to 150 ?m, and distances to a bottom of profile valley line Rv and to a top of profile peak line are in the ranges from 20 to 70 ?m, respectively. Furthermore, a spray deposit has a low hardness coat selected from an Al base spray deposit of Hv 30 (Vickers hardness) or less, a Cu base spray deposit of Hv 100 or less, a Ni base spray deposit of Hv 200 or less, a Ti base spray deposit of Hv 300 or less, a Mo base spray deposit of Hv 300 or less and a W base spray deposit of Hv 500 or less. Such component for a vacuum deposition apparatus may suppress, with stability and effectiveness, peeling of deposition material adhering on a component during deposition. In addition, the number of apparatus cleaning and of exchange of components may be largely reduced.

Abstract: A pyrolysis oven provides uniform pyrolytic coatings on capacitor anodes. An oven chamber contains cross-flow blowers situated to provide uniform laminar flow of oven atmosphere over the objects to be treated. The top and side walls of the chamber meet in an inverted V such that when the blower operate, a vortex is created in the inverted V in the chamber.

Abstract: An in-line, multi-station apparatus including an improved pallet for transporting a plurality of workpieces/substrates through the apparatus, the pallet comprising: (a) a sheet of electrically conductive material provided with a plurality of spaced-apart regions extending at least partway therethrough, each of the regions adapted to mount therein and expose at least one major surface of respective workpieces/substrates for receipt of the treatment; and (b) a plurality of electrical contact means for selectively and controllably electrically contacting respective ones of said plurality of workpieces/substrates for applying an electrical bias potential thereto during treatment. Embodiments include in-line apparatus for performing bias sputtering of electrically conductive thin films on insulative substrates in the manufacture of multi-layer magnetic and/or magneto-optical recording media.

Abstract: A glass substrate is placed within a vacuum chamber with the surface on which an emissive layer forming an electroluminescence element is to be formed by evaporation facing downward. A mask is disposed within the vacuum chamber. A material of the emissive layer is adhered to the glass substrate through an opening of the mask, to thereby form the emissive layer. When the glass substrate and the mask are aligned, at least three sides of the glass substrate are supported by side supporting members.

Abstract: Heating head and mask apparatus are provided for producing electrically conductive heated glass panels that may be used to warm objects or insure unobstructed viewing through glass by removing moisture. The heating head and mask apparatus utilizes either a circularly rotating or an inline heating head and mask apparatus, which deposits conductive metal bus bars into electrical contact with electrically conductive-coatings that are-disposed on the glass panels.

Abstract: In one embodiment, the invention is directed to aperture mask deposition techniques using aperture mask patterns formed in one or more elongated webs of flexible film. The techniques involve sequentially depositing material through mask patterns formed in the film to define layers, or portions of layers, of the circuit. A deposition substrate can also be formed from an elongated web, and the deposition substrate web can be fed through a series of deposition stations. Each deposition station may have an elongated web formed with aperture mask patterns. The elongated web of mask patterns feeds in a direction perpendicular to the deposition substrate web. In this manner, the circuit creation process can be performed in-line. Moreover, the process can be automated to reduce human error and increase throughput.

Abstract: A magnetic dipole ring assembly positioned inside a vacuum chamber and around a wafer being sputter deposited with a ferromagnetic material such as NiFe or other magnetic materials so that the material is deposited with a predetermined magnetization direction in the plane of the wafer. The magnetic dipole ring may include 8 or more arc-shaped magnet segments arranged in a circle with the respective magnetization directions precessing by 720° around the ring. The dipole ring is preferably encapsulated in a vacuum-tight stainless steel carrier and placed inside the vacuum chamber. The carrier may be detachably mounted on a cover ring, on the shield, or on the interior of the chamber sidewall. In another embodiment, the magnet is a magnetic disk placed under the wafer. Such auxiliary magnets allow the magnetron sputter deposition of aligned magnetic layers.

Abstract: To generate an especially good heat transfer between a seating face of a storage plate support and a storage plate, during coating with a sputter source in a vacuum installation, the seating face of the storage plate support is slightly annularly convexly arched and the storage plate is clamped in the center as well as on its outer margin by a center mask and an outer mask against the arched seating face. Hereby an especially good heat transfer is attained with very low arching d, whereby the storage plate is treated gently and simultaneously, during the coating process, no layer thickness distribution problems occur through arching that is too large.

Abstract: A production method and a production apparatus for a magnetic recording medium, which enable the efficient production of a discrete type magnetic recording medium, while reliably preventing any deterioration of the partitioned recording elements.

Abstract: The present invention relates to radiation sources and a method for producing radiation sources. Embodiments of the present invention are directed to radiation sources that can be used to calibrate nuclear imaging equipment, such as flood sources. According to embodiments of the invention, the radiation source includes a outer housing that contains a substrate upon which a radioactive pattern is deposited. The radioactive deposit may be placed on the surface of the substrate in the form of a deposited solution and may be fixed to the surface of the substrate by, for example, a binding agent and/or a sealing layer. The deposited solution may also include a colorant to visually indicate the activity distribution of the radioactive deposit.

Abstract: A method of applying a moisture barrier seal to a fiber optic coil includes mounting a fiber optic coil in a vacuum deposition chamber, so as to expose a large exterior surface area of the fiber optic coil to an interior portion of the deposition chamber. The method further includes reducing the air pressure within the chamber to a value that is less than ambient pressure outside of the chamber. The method further includes introducing a vapor form of a non-porous material, preferably parylene, into the chamber. The vapor form of the non-porous material changes into a solid state upon contact with the fiber optic coil, so as to form a conformal coat on the fiber optic coil.

Abstract: A preventive maintenance tool which may be installed on a metal chemical vapor deposition (CVD) chamber to prevent escape of contaminating and toxic gases from the chamber interior during preventative maintenance (PM) cleaning of the chamber. The tool comprises a cylindrical tool body which fits to the lid O-ring of the chamber to form a gas-tight seal therewith; a vacuum line connector nipple extending from the body for connection to a vacuum line; and a lid panel rotatably mounted in the body and fitted with a pair of hinged closing panels for reversibly sealing the chamber and facilitating chamber cleaning.

Abstract: This invention is a vacuum processing apparatus comprising of a vacuum processing area (14) having a stage (16) on which a substrate to be processed (17) is mounted, and a carrier port (18) provided on a periapheral wall of a processing chamber (11) forming the vacuum processing area (14) and carrying the substrate (17) onto and off the stage (16), for generating plasma in the vacuum processing area (14) and subjecting the substrate (17) on the stage (16) to a plasma processing, wherein a shutter (20) closing the carrier port (18) to prevent the plasma from being disordered when the plasma is generated in the vacuum processing chamber is provided.

Abstract: A method includes a step of attracting a glass substrate 20 that is a subject for deposition using the electrostatic attraction of a stage 1, a step of aligning the attracted glass substrate with a deposition mask 2, and a step of evaporating an organic compound that is a deposition material, used for forming electroluminescent elements so as to deposit the compound on the glass substrate 20. An electrostatic chucking function is provided to the deposition mask according to needs, whereby the adhesion is enhanced.

Abstract: An alignment device for permitting a deposition mask having a plurality of magnetic mask segments to be positioned relative to a substrate to facilitate simultaneous deposition of organic material on to the substrate which will be part of an organic light emitting device.

Abstract: An apparatus and method for forming a HSG silicon layer on a capacitor lower electrode of a semiconductor memory device. The apparatus includes a processing chamber having a plurality of source gas supply nozzles, the lengths of the nozzles being different from one another so as to uniformly supply a source gas. A loadlock chamber is placed under the processing chamber. A boat loaded with wafers is moved from the loadlock chamber to the processing chamber, with the boat being rotated while the source gas is supplied. The processing chamber and loadlock chambers are connected to a vacuum system having two vacuum pumps for maintaining a vacuum in the chambers. A third vacuum pump, connected to the processing chamber, is operated when the vacuum in the processing chamber reaches a predetermined value.

Abstract: The invention includes a deposition apparatus having a reaction chamber, and a microwave source external to the chamber. The microwave source is configured to direct microwave radiation toward the chamber. The chamber includes a window through which microwave radiation from the microwave source can pass into the chamber. The invention also includes deposition methods (such as CVD or ALD methods) in which microwave radiation is utilized to activate at least one component within a reaction chamber during deposition of a material over a substrate within the reaction chamber.

Abstract: A gas supplying apparatus for a semiconductor manufacturing device has an interlock apparatus that includes at least one solenoid valve that controls the gas supply from a gas source to the semiconductor manufacturing device, a main controller configured to ouput a control signal for the semiconductor manufacturing device and a driver signal, a driver configured to apply a driving voltage to the at least one solenoid valve in response to the driver signal, and an interlocker configured to sense the open/shut state of the solenoid valves and configured to transmit an interlock signal to the main controller.

Abstract: An oblique sputtering deposition apparatus is provided for preparing a thin film. A collimator having angled passages for filtering out particles from stray directions is placed between the substrate and the incident particle flux. The angle of the passages can be adjusted from about 0 to about 90° with respect to the substrate normal according to requirements. The oblique incidence of particle flux brings forms a column structure which is also angled.

Abstract: When coating substrates it is frequently desired that the layer thickness should be a certain function of the position on the substrate to be coated. To control the layer thickness a mask is conventionally arranged between the coating particle source and the substrate. This leads to undesirable shadow effects. In addition, is has so far only been possible to obtain rotationally symmetrical thickness distributions. It is now proposed that masks should be used having apertures aligned according to a regular grid on the mask surface. Such a mask with a mask holder comprising a base frame (2), an intermediate frame (3) and a mask frame (4) which are joined one to the other by means of double hinges (5a, a′, b, b′), is moved arbitrarily in the mask plane. By this means arbitrary thickness distributions can be achieved when coating substrates at reasonable cost.

Abstract: Apparatuses, systems, and methods are disclosed for providing optical communications. Bragg grating used in the optical components and systems of the present invention are produced by selectively hydrogenating one or more selected sections of an optical waveguide in general, and particularly optical fiber. Selective hydrogenation can be performed by selectively establishing local conditions in a first environment conducive to introducing greater quantities of hydrogen into selected sections than into non-selected sections, which are maintained in a second environment. The extent of selective hydrogenation and the hydrogen concentration difference between selected and non-selected section of the waveguide is a function of the temperature, pressure, and time of exposure established in the first and second environments.

Abstract: One embodiment relates to an apparatus for sputtering material onto a workpiece, the apparatus including a vacuum chamber and a target disposed in the vacuum chamber, the target comprising a material to be deposited onto said workpiece. The apparatus also includes a holder for the workpiece and at least one recyclable process kit component positioned to accumulate material sputtered from the target. The process kit component includes a base metal layer including titanium and an outer layer of titanium nitride. The titanium nitride layer acts as an etch stop during recycling of the process kit component. The process kit component may include a part selected from the group of a shield, pedestal, shutter, coil, collimator, deposition ring, cover ring, and clamp ring.

Abstract: The invention relates to a device and a method for the formation of gradient layers on substrates in a vacuum chamber by means of which the gradient layers having increased efficiency and reduced residual ripple of the surface can be-obtained. The solution according to the invention is then designed such that at least one plasma source or by means of evaporation a particle current is directed upon the surface of the substrate to be coated within the vacuum chamber. A mask having discretely arranged perforations is disposed between a particle source and the substrate. The mask has a constant thickness and is allowed to be oscillatorily moved by means of a drive along at least one axis with respect to the substrate in a plane. The ratio of the free cross-sections of the perforations being discretely present within the mask, and of the, intermediate web surfaces varies 'per unit of area over the total surface or on areas of this mask.

Abstract: A system and method for manufacturing thin-film structures disposed on a substrate. The thin-film structures have different respective thicknesses that vary along a radius of the substrate. A substrate rotates about an axis of rotation and a source of deposited material is directed at the rotating substrate. A mask having a stepped profile is positioned between the rotating substrate and the source. The stepped mask selectively blocks material emanating from the source from reaching the substrate. Each step of the profile of the mask corresponds to one of the respective thicknesses of the thin-film structures. The radius along which the different respective thicknesses of the film-thin structures vary is measured from the axis of rotation of the rotating substrate, and the substrate includes at least one wafer having a center that is either coincident or offset from the axis of rotation.

Abstract: An alignment mark shielding ring for use in a physical vapor deposition chamber and a method for using the ring to avoid arcing problems on the wafer. The alignment mark shielding ring can be constructed of a ring that has a generally L-shaped cross-section, at least one hood portion to function as the shield for the alignment mark, at least one alignment pin for engaging at least one alignment sleeve mounted in a lower chamber shield for holding the alignment mark shielding ring in place. The alignment sleeve is constructed in two halves, each having an aperture therethrough. The aperture in the top half is larger than the aperture in the bottom half such that even when the apertures are coated with a metal layer deposited in the PVD process, the alignment pin does not electrically short to the lower chamber shield and thus, any possibility of arcing is avoided.

Abstract: A laser correction apparatus irradiates a laser upward onto a defect on a photomask formed on the bottom surface thereof. The particles generated by the laser irradiation is removed by blowing a gas to the space between the bottom surface of the substrate and a window port. The window port has a top flat surface having a central opening and an inner wall having a top portion of a funnel shape and a bottom portion of a cylindrical shape. The gas introduced to the space passes the central opening, forms a spiral flow while increasing the diameter thereof, and is exhausted from gas outlet ports formed on the cylindrical portion.

Abstract: A shadow frame and framing system for semiconductor fabrication equipment comprising a rectangular frame having four edges, the edges forming an interior lip with a top surface and an bottom engagement surface; and a cross beam disposed between at least two edges of the frame, the cross beam having a top surface and a bottom engagement surface, the engagement surface of the cross beam configured to be flush with the engagement surface of the lip; wherein one or more of the engagement surfaces are configured to cover metal interconnect bonding areas on a carrier disposed below the frame. The shadow frame is particularly useful in plasma enhanced chemical vapor deposition (PECVD) applications used to make active matrix liquid crystal displays (AMLCDs) and solar cells.

Abstract: A shadow mask material is selected so that the expansion characteristics of the shadow mask during thin film deposition closely match the expansion characteristics of the substrate. The shadow mask material is typically one with a low coefficient of thermal expansion (CTE). The shadow mask material must typically meet additional criteria, such as mechanical strength, feature quality, and dimensional accuracy criteria.

Abstract: A method and apparatus for fabricating a wafer spacing mask and a substrate support chuck. Such apparatus is a stencil containing a plurality of dual counterbored apertures that is positioned atop the substrate support chuck while material is deposited onto the stencil and through the apertures' openings onto the chuck. Upon completion of the deposition process, the stencil is removed from the workpiece support chuck leaving deposits of the material of various widths but the same heights to form the wafer spacing mask.