Abstract: An integrated modular multiple chamber vacuum processing system is disclosed. The system includes a load lock, may include an external cassette elevator, and an internal load lock wafer elevator, and also includes stations about the periphery of the load lock for connecting one, two or several vacuum process chambers to the load lock chamber. A robot is mounted within the load lock and utilizes a concentric shaft drive system connected to an end effector via a dual four-bar link mechanism for imparting selected R-.theta. movement to the blade to load and unload wafers at the external elevator, internal elevator and individual process chambers. The system is uniquely adapted for enabling various types of IC processing including etch, deposition, sputtering and rapid thermal annealing chambers, thereby providing the opportunity for multiple step, sequential processing using different processes.

Abstract: A fine pattern forming apparatus includes a stage and an opposed electrode at least one of which is made of a magnetic material. A magnetic field is applied to this stage or opposed electrode to provide a predetermined gap between the stage and the opposed electrode for a fine pattern formation. In consequence, optimum etching conditions (including etching uniformity, etch rate and etching direction) can be assured without generating dust. As a result, damage caused by the plasma can be reduced, and the etch rate can be increased.

Abstract: An evacuable tank having gas inlet and gas outlet openings, with at least one large-area anode at ground potential and a cathode provided as a substrate holder disposed substantially parallel thereto and connected to a high-frequency voltage source. The anode surface has step-shaped areas each being spaced at a different distance from the cathode in order to maintain a uniform ion concentration and therefore a uniform plasma.

Abstract: A photochemical vapor phase reaction apparatus and a method of causing a photochemical vapor phase reaction are described. The apparatus comprises a vacuum chamber, a substrate holder provided in the vacuum chamber for holding a substrate to be treated by a vapor phase reaction, a gas feeding system for supplying a reactive gas to the reaction space, a light source housed in a light source room for emitting light rays through a light window, an optical system for condensing and projecting the light rays emitted from the light source onto the substrate on the holder. By this configuration, the intensity of light is relatively low at the light window and relatively high at the surface of a substrate to be treated.

Abstract: The invention relates to a method for the aftertreatment of an oxide coating, and specifically an SiO.sub.x coating on a synthetic film. In this aftertreatment the oxide coating is exposed to a plasma whose particles effect positive changes of the oxide coating.

Abstract: A multi-electrode plasma processing system (10) provides flexible plasma processing capabilities for semiconductor device fabrication. The plasma processing equipment (10) includes a gas showerhead assembly (52) a radio-frequency chuck (24), and screen electrode (66). The screen electrode (66) includes base (68) for positioning within process chamber (10) and is made of an insulating material such as a ceramic or teflon. A perforated screen (70) is integral to base (68) and generates a plasma from a plasma-producing gas via a radio-frequency power source (104). The screen (70) has numerous passageways (78) to allow interaction of plasma and the process chamber walls. The screen (70) surrounds showerhead assembly (52) and semiconductor wafer (22) and can influence the entire semiconductor wafer plasma processing environment (62) including the plasma density and uniformity.

Abstract: A fine pattern forming apparatus includes an elastic wave generating device which is provided on the wall of a vacuum chamber. A fine pattern forming method involves formation of a fine pattern while an elastic wave is being applied to the vacuum chamber by the elastic wave generating device. Since the fine pattern is formed while the elastic wave is applied to the vacuum chamber the, uniformity of the plasma density and of the electron density is improved and attachment of reaction products to the vacuum chamber is prevented.

Abstract: The apparatus of the present invention comprises a reaction vessel, and disposed within this vessel, a pair of opposed electrodes. The opposed electrodes comprise an upper electrode and a lower electrode which are spaced apart a suitable distance for receiving the substrate. The lower electrode has an upper surface covered with a solid dielectric. The upper electrode may have its lower surface covered with a solid dielectric, or it may be composed of a plurality of fine wires. Near the spaced apart electrodes are a plurality of gas outlets for uniformly dispersing the reaction gas between the spaced apart electrodes.The method of the present invention comprises introducing a reagent gas or a mixture of a reagent gas and a rare gas or an inert gas into the reaction vessel, exciting the gas to produce a glow discharge plasma under atmospheric pressure, and treating the surface of the substrate with the plasma.

Abstract: A low pressure chemical vapor deposition apparatus is provided for removing particulate matter. The apparatus includes a bell jar, a quartz tube installed in the bell jar, a slotted quartz boat installed in the quartz tube and for holding wafers which are to be coated with film. The apparatus further includes a gas line for introducing a reactant gas into the chamber within the quartz tube, where the quartz boat is located, a gas inlet made of quartz, an MFC, a valve 10 a three-zone furnace for heating the quartz tube to a reaction temperature, a pump 4 for pumping out air and reactant gas from the chamber within the quartz tube, a door plate for placing the slotted quartz boat in the chamber a power source device for causing an electric current to charge contacts with a positive or negative bias which are provided on the door plate, and a main controller for operating the power source device.

Abstract: A semiconductor wafer processing apparatus, particularly a CVD reactor, is provided with plasma cleaning electrodes integrated into process gas flow shaping structure that smoothly directs the gas past the wafer on a susceptor. The processing apparatus preferably has a showerhead or other inlet to direct a gas mixture onto a wafer and a plurality of baffles to reduce turbulence. Plasma cleaning electrodes are included in the baffles or the showerhead or both, one or more of which preferably have cleaning gas outlet orifices therein, preferably evenly distributed around the axis of the susceptor to provide uniform cleaning gas flow.

Abstract: An apparatus and method including a current sensor having a radiation emitter, such as an electrical resistor, and a radiation detector, such as an infrared detector, for sensing current flowing to a plasma generating electrode from a radio frequency (RF) power source. The resistor may include a high emissivity infrared coating to enhance efficiency of the current sensor. The infrared detector provides a highly accurate indication of the average or root-mean-square current delivered to the plasma generating electrode without introducing parasitic capacitance into the measurement, or sensing, circuit. A voltage sensor and a second current sensor, such as a torroidal current sensor, provide the voltage and phase angle of the current delivered to the plasma generating electrode to thereby permit calculation of the power delivered to the plasma generating electrode. A processor controls the RF source responsive to the sensed average current, sensed voltage, and sensed phase angle of the current.

Abstract: A cold wall CVD reactor, particularly one for use in depositing TiN in a TiCl.sub.4 +NH.sub.3 reaction, is provided with a metallic liner insert in partially thermally insulated from the reactor wall which serves as one plasma electrode to form a weak secondary plasma when energized along with a second electrode near the vacuum exhaust port of the reactor. The plasma, in cooperation with radiant lamps provided to heat a wafer substrate onto which the primary CVD film is to be applied, heats the liner and a portion of the space adjacent the reactor walls and susceptor surfaces downstream of the reaction volume to cause the formation of deposits to be of the nature that can be removed by plasma cleaning without opening the reactor volume. Deposits such as TiN.sub.x Cl.sub.y and TiN form at temperatures of approximately 200.degree. C. to 650.degree. C., preferably between 300.degree. C. and 450.degree. C., rather than adduct ammonia salts of TiCl.sub.4, which would tend to form at temperatures of 200.degree. C.

Abstract: An apparatus continuously manufactures a semiconductor device. A plurality of glow discharge regions are connected by gas gates. A sufficiently long belt-shaped substrate having a desired width is arranged along a path in which the substrate sequentially penetrates the glow discharge regions. The belt-shaped substrate is continuously conveyed in a longitudinal direction while depositing a semi-conductor layer of a conductivity type in each of the glow discharge regions, thereby continuously manufacturing the device having a semiconductor junction. A plurality of rotatable rollers are arranged in a slit-shaped separating passage of the gas gates so as to support the back surface of the belt-shaped substrate while rotating the rollers.

Abstract: Disclosed is a method and apparatus for effecting glow discharge comprising an elongated electrically conductive glow bar electrode, means for applying a potential to the glow bar electrode, thereby generating ions, means for creating a flow of ions from the glow bar electrode to a second electrode, and a shield situated to block partially the flow of ions between the glow bar electrode and the second electrode, said shield having a plurality of apertures through which ions can flow between the glow bar electrode and the second electrode, each aperture having associated therewith at least one shutter, said shutters being capable of at least partially blocking the flow of ions through the apertures, each shutter individually movable to a plurality of positions to adjust the flow of ions through the apertures.

Abstract: A multi-zone multi-electrode plasma processing method for uniform plasma processing and effective in-situ fabrication reactor process chamber (10) cleaning during a plasma deposition or etch process first comprises the steps of flowing plasma deposition or etch gases into the process chamber (10) in a chopped or continuous mode (line 214) followed by flowing plasma gases into the process chamber (10) in a chopped mode (220) or a continuous mode. By intermittently activating (224) at least one plasma electrode (24 or 52) upon initiating flow of the plasma processing gas, the method generates a process plasma medium to perform the plasma-enhanced deposition or etch process. Additionally, intermittently activating the same or a different configuration of plasma electrodes (66), during the time that the process gas flows are stepped, an in-situ cleaning plasma is produced for performing a plasma-assisted chamber cleaning process.

Abstract: Hollow-anode glow discharge apparatus in the form of two-electrode and three-electrode reactors provide, in various embodiments, improved uniformity, efficiency and low-pressure substrate surface processing. In one improved uniformity embodiment for ion-dominated processes, the apparatus of the invention includes a high-energy-density uniformizing grid having multiple, multi-sized and evenly-spaced holes. In one improved uniformity embodiment for chemically-dominated processes, the apparatus of the invention includes a high-energy-density uniformizing grid having multiple, evenly-spaced holes and a stepped or continuously-variable non-planar profile. In one improved low pressure embodiment for ion-dominated and/or chemically-dominated processes, the apparatus of the invention includes a high-energy-density grid having multiple, evenly-sized and spaced holes of widths large enough to overcome dark space effects.