Substrate Heater Patents (Class 118/725)
  • Patent number: 10388560
    Abstract: A shaft-end mounting structure according to the present invention is a structure to mount an end of a hollow ceramic shaft 20 in a gastight manner on a circumference of a through hole 104 in a base plate 102 of a chamber 100, the shaft 20 being integrated with a ceramic plate 12 on which a wafer is to be placed. A ring member 26 is connected in a gastight manner to an end face of the shaft 20 with a metal layer 28 provided therebetween, the member 26 being composed of a metal material or a metal-ceramic composite material. Bolts 32 extend through the base plate 102 and a metal seal 30 and fasten the member 26 so as to draw the member 26 toward the base plate 102 while the member 26 is placed on the circumference of the through hole 104 with the seal 30 provided therebetween.
    Type: Grant
    Filed: February 28, 2017
    Date of Patent: August 20, 2019
    Assignee: NGK Insulators, Ltd.
    Inventor: Hiroshi Takebayashi
  • Patent number: 10378108
    Abstract: Embodiments of the present disclosure relate to a showerhead assembly for use in a processing chamber. The showerhead assembly includes a porous insert disposed in a space defined between a gas distribution plate and a base plate to moderate the corrosive radicals resulting from plasma ignition to reduce particle issues and metal contamination in the chamber. The porous insert is a conductive material, such as metal, used to reduce the gap electrical field strength, or may be a dielectric material such as ceramic, polytetrafluoroethylene, polyamide-imide, or other materials with a low dielectric loss and high electrical field strength under conditions of high frequency and strong electric fields. As such, the electrical breakdown threshold is enhanced. The porous insert may reduce and/or eliminate showerhead backside plasma ignition and may include multiple concentric narrow rings that cover gas holes of the gas distribution plate.
    Type: Grant
    Filed: July 26, 2016
    Date of Patent: August 13, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Haitao Wang, Hamid Noorbakhsh, Chunlei Zhang, Sergio Fukuda Shoji, Kartik Ramaswamy, Roland Smith, Brad L. Mays
  • Patent number: 10366882
    Abstract: The present invention provides a technique by which heat can be efficiently recovered from a coolant used to cool a reactor, and contamination with dopant impurities from an inner wall of a reactor when polycrystalline silicon is deposited within the reactor can be reduced to produce high-purity polycrystalline silicon. With the use of hot water 15 having a temperature higher than a standard boiling point as a coolant fed to the reactor 10, the temperature of the reactor inner wall is kept at a temperature of not more than 370° C. Additionally, the pressure of the hot water 15 to be recovered is reduced by a pressure control section provided in a coolant tank 20 to generate steam. Thereby, a part of the hot water is taken out as steam to the outside, and reused as a heating source for another application.
    Type: Grant
    Filed: March 27, 2015
    Date of Patent: July 30, 2019
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Shigeyoshi Netsu, Kyoji Oguro, Takaaki Shimizu, Yasushi Kurosawa, Fumitaka Kume
  • Patent number: 10354892
    Abstract: Embodiments of the invention generally relate to a method of cleaning a substrate and a substrate processing apparatus that is configured to perform the method of cleaning the substrate. More specifically, embodiments of the present invention relate to a method of cleaning a substrate in a manner that reduces or eliminates the negative effects of line stiction between semiconductor device features. Other embodiments of the present invention relate to a substrate processing apparatus that allows for cleaning of the substrate in a manner that reduces or eliminates line stiction between semiconductor device features formed on the substrate.
    Type: Grant
    Filed: November 12, 2013
    Date of Patent: July 16, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Steven Verhaverbeke, Han-Wen Chen, Roman Gouk
  • Patent number: 10344382
    Abstract: There is provided a film forming apparatus including a raw material gas nozzle provided with gas discharge holes for discharging a mixed gas of a raw material gas and a carrier gas; a flow regulating plate portion extended along the longitudinal direction of the raw material gas nozzle; a central region configured to supply a separating gas from a center side within a vacuum container toward a substrate loading surface of a rotary table; a protuberance portion protruded from the flow regulating plate portion toward the rotary table at a position shifted toward a center side of the rotary table from the gas discharge holes; and a protuberance portion configured to restrain the separating gas from flowing between the flow regulating plate portion and the rotary table; and an exhaust port configured to vacuum exhaust the interior of the vacuum container.
    Type: Grant
    Filed: May 8, 2015
    Date of Patent: July 9, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hideomi Hane, Takahito Umehara, Takehiro Kasama, Tsubasa Watanabe
  • Patent number: 10327473
    Abstract: The inductively heatable tobacco product for aerosol-generation comprises an aerosol-forming substrate containing a susceptor in the form of a plurality of particles. The aerosol-forming substrate is a crimped tobacco sheet comprising tobacco material, fibers, binder, aerosol-former and the susceptor in the form of the plurality of particles.
    Type: Grant
    Filed: May 21, 2015
    Date of Patent: June 25, 2019
    Assignee: Philip Morris Products S.A.
    Inventor: Oleg Mironov
  • Patent number: 10325801
    Abstract: There is provided a mounting table system which includes: a mounting table rotatably installed so as to mount a substrate thereon; a plurality of heating parts installed in the mounting table, and configured to heat the mounting table; a single power source configured to supply an electric power to the plurality of heating parts; and a power switching part configured to switch from a first heating part among the plurality of heating parts to which the electric power is supplied from the single power source, to a second heating part among the plurality of heating parts, depending on a rotational angle of the mounting table.
    Type: Grant
    Filed: May 15, 2017
    Date of Patent: June 18, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Tadashi Mitsunaga, Tetsuya Miyashita, Tatsuo Hatano, Naoki Watanabe
  • Patent number: 10273578
    Abstract: A heating module for use in a substrate processing chamber. The heating module having a housing with a heat source therein. The heating module can be part of a gas distribution assembly positioned above a susceptor assembly to heat the top surface of the susceptor and wafers directly. The heating module can have constant or variable power output. Processing chambers and methods of processing a wafer using the heating module are described.
    Type: Grant
    Filed: October 3, 2014
    Date of Patent: April 30, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Joseph Yudovsky, Robert T. Trujillo, Kevin Griffin, Garry K. Kwong, Kallol Bera, Li-Qun Xia, Mandyam Sriram
  • Patent number: 10276455
    Abstract: Methods, and corresponding systems, are described that include providing a laser-based measurement tool. An implement of a semiconductor fabrication process tool (e.g., susceptor) is delivered to the laser-based measurement tool where a plurality of measurements is performed of a surface of the implement using a blue wavelength radiation. The measurements are of a distance (e.g., angstroms) from a reference plane and provide an indication of the profile of the surface of the susceptor. As the surface profile of the susceptor can affect layers deposited on target substrates using the susceptor, the measurements provide for a disposition of the susceptor.
    Type: Grant
    Filed: July 29, 2016
    Date of Patent: April 30, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shih-Wei Hung, Charng-Long Lu, Chien-Feng Lin
  • Patent number: 10276385
    Abstract: First irradiation which causes an emission output from a flash lamp to reach its maximum value over a time period in the range of 1 to 20 milliseconds is performed to increase the temperature of a front surface of a semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. This achieves the activation of the impurities. Subsequently, second irradiation which gradually decreases the emission output from the maximum value over a time period in the range of 3 to 50 milliseconds is performed to maintain the temperature of the front surface within a ±25° C. range around the target temperature for a time period in the range of 3 to 50 milliseconds. This prevents the occurrence of process-induced damage while suppressing the diffusion of the impurities.
    Type: Grant
    Filed: April 29, 2016
    Date of Patent: April 30, 2019
    Assignee: SCREEN Holdings Co., Ltd.
    Inventors: Kazuhiko Fuse, Shinichi Kato, Kenichi Yokouchi
  • Patent number: 10266943
    Abstract: Implementations described herein protect a substrate support from corrosive cleaning gases used at high temperatures. In one embodiment, a substrate support has a shaft and a heater. The heater has a body. The body has a top surface, a side surface and a bottom surface. The top surface is configured to support a substrate during plasma processing of the substrate. A covering is provided for at least two of the top surface, side surface and bottom surface. The covering is selected to resist corrosion of the body at temperatures in excess of about 400 degrees Celsius.
    Type: Grant
    Filed: August 20, 2014
    Date of Patent: April 23, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Abdul Aziz Khaja, Ren-Guan Duan, Amit Kumar Bansal, Jianhua Zhou, Juan Carlos Rocha-Alvarez
  • Patent number: 10269557
    Abstract: An apparatus of processing a semiconductor substrate include a chuck, a holder, a liquid supplying system and a positive pressure unit. The chuck has a principal surface and at least a hole formed thereon. The holder is capable of holding a semiconductor substrate at a position above the principal surface. The liquid supplying system is configured to provide a liquid film onto the principal surface through the hole. The positive pressure unit is configured for providing a gas flow to a space over the chuck. A method of processing a semiconductor substrate is disclosed herein as well.
    Type: Grant
    Filed: October 20, 2015
    Date of Patent: April 23, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Chih Hsu, Kai-Lin Chuang, Yuan-Chi Chien, Jeng-Huei Yang, Jun-Xiu Liu
  • Patent number: 10241397
    Abstract: According to one embodiment, an imprint apparatus including multiple types of imprint units and a conveyor to convey a substrate is provided. Each of the imprint units includes a suction mechanism configured to hold the substrate with multiple suction portions on a substrate holder, and a template having an imprint surface on which a concavo-convex pattern is formed on one face of a template substrate and having a recessed region in the other face, the recessed region corresponding to the imprint surface. The imprint units have different depths of the recessed regions in the templates and different arrangements of the suction portions in the suction mechanisms depending on the types.
    Type: Grant
    Filed: September 4, 2014
    Date of Patent: March 26, 2019
    Assignee: Toshiba Memory Corporation
    Inventors: Manabu Takakuwa, Yoshihisa Kawamura, Ikuo Yoneda
  • Patent number: 10233540
    Abstract: A loader device for loading porous substrates of three-dimensional shapes extending mainly in a longitudinal direction into a reaction chamber of an infiltration oven for densification of the preforms by directed flow chemical vapor infiltration. The device comprising at least one annular loader stage formed by first and second annular vertical walls arranged coaxially relative to each other and defining between them an annular loader space for the porous substrates to be densified. First and second plates respectively cover the bottom portion and the top portion of the annular loader space. The first and second annular vertical walls include support elements arranged in the annular loader space so as to define between them unit loader cells, each for receiving a respective substrate to be densified. The device also comprises gas feed orifices and gas exhaust orifices in the vicinity of each unit loader cell.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: March 19, 2019
    Assignee: SAFRAN CERAMICS
    Inventors: Sébastien Bertrand, Franck Lamouroux, Stéphane Goujard
  • Patent number: 10221480
    Abstract: There is provided a substrate processing apparatus for processing a substrate by supplying a processing gas to the substrate while revolving the substrate, the substrate processing apparatus including: a rotary table installed within a processing container; a rotating mechanism configured to rotate the rotary table; a support part installed in a rotary shaft of the rotary table below the rotary table; an opening portion formed in the rotary table to correspond to a mounting position where the substrate is mounted; a mounting part rotatably supported by the support part through the opening portion, and configured to mount the substrate thereon such that a height level of an upper surface of the substrate coincides with a height level of an upper surface of the rotary table; and a rotating mechanism configured to rotate the mounting part.
    Type: Grant
    Filed: September 2, 2016
    Date of Patent: March 5, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hitoshi Kato, Yukio Ohizumi, Manabu Honma
  • Patent number: 10221482
    Abstract: A gas distributor for a CVD reactor includes two separate gas distribution chambers, into each of which a process gas can be fed through an infeed opening. Each of the gas distribution chambers is formed, in part, by a gas distribution device disposed in a top layer being in each case flow-connected to connecting channels disposed in a bottom layer. The connecting channels associated with different gas distribution chambers lie alternately adjacent to one another and have gas outlet openings for the process gases to escape. Each of the at least two gas distribution devices has a distribution section, which in each case is flow-connected to a plurality of sub-distribution sections. The connecting channels are flow-connected to at least one of the sub-distribution sections. The sub-distribution sections of different gas distribution chambers lie alternately adjacent to one another and are separated from one another by a dividing wall.
    Type: Grant
    Filed: February 14, 2014
    Date of Patent: March 5, 2019
    Assignee: AIXTRON SE
    Inventors: Thomas Krücken, Baskar Pagadala Gopi, Martin Dauelsberg
  • Patent number: 10202707
    Abstract: Apparatus for processing a substrate are provided herein. In some embodiments, a lamphead for use in substrate processing includes a monolithic member having a contoured surface; a plurality of reflector cavities disposed in the contoured surface, wherein each reflector cavity is shaped to act as a reflector or to receive a replaceable reflector for a lamp; and a plurality of lamp passages, wherein each lamp passage extends into the monolithic member from one of the plurality of reflector cavities.
    Type: Grant
    Filed: April 18, 2013
    Date of Patent: February 12, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Joseph M. Ranish, Paul Brillhart, Satheesh Kuppurao, Dongming Iu
  • Patent number: 10186444
    Abstract: A gas flow is described to reduce condensation with a substrate processing chuck. In one example, a workpiece holder in the chamber having a puck to carry the workpiece for fabrication processes, a top plate thermally coupled to the puck, a cooling plate fastened to and thermally coupled to the top plate, the cooling plate having a cooling channel to carry a heat transfer fluid to transfer heat from the cooling plate, a base plate fastened to the cooling plate opposite the puck, and a dry gas inlet of the base plate to supply a dry gas under pressure to a space between the base plate and the cooling plate to drive ambient air from between the base plate and the cooling plate.
    Type: Grant
    Filed: March 20, 2015
    Date of Patent: January 22, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Hun Sang Kim, Michael D. Willwerth
  • Patent number: 10109466
    Abstract: Provided is a support unit. The support unit includes a support plate having a top surface in which a measurement groove is defined and on which a substrate is placed, and a sensor for measuring a pressure in the measurement groove in the state where the substrate is placed on the support plate. The measurement groove has a main measurement groove that extends from a central area of the support plate up to an edge area of the support plate.
    Type: Grant
    Filed: December 2, 2014
    Date of Patent: October 23, 2018
    Assignee: PSK INC.
    Inventor: Dong Kun Yoo
  • Patent number: 10074555
    Abstract: Embodiments of the present invention provide apparatus and methods for supporting, positioning or rotating a semiconductor substrate during processing. One embodiment of the present invention provides a method for processing a substrate comprising positioning the substrate on a substrate receiving surface of a susceptor, and rotating the susceptor and the substrate by delivering flow of fluid from one or more rotating ports.
    Type: Grant
    Filed: March 5, 2013
    Date of Patent: September 11, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Blake Koelmel, Nyi O. Myo
  • Patent number: 10070483
    Abstract: When a solid product of a target component is obtained by heating a container in which a solution containing a target component is housed with a heater and evaporating the solvent in the solution, the amount of heating by the heater is controlled based on the detection results of the temperature of the container detected by a temperature detection part so that the temperature of the container approaches a target temperature. At least one of a starting timing T2 and an ending timing T4 is then discriminated based on the amount of heating by the heater. Since the amount of heating by the heater varies while being sensitively affected by the vaporization heat generated when the solvent evaporates, the starting timing T2 or the ending timing T4 can be accurately discriminated by using the amount of heating by the heater as a discrimination criterion.
    Type: Grant
    Filed: June 8, 2015
    Date of Patent: September 4, 2018
    Assignee: SHIMADZU CORPORATION
    Inventor: Michiaki Owa
  • Patent number: 10053777
    Abstract: Embodiments described herein provide a substrate processing apparatus that includes a vacuum chamber comprising a first dome and a second dome, a substrate support disposed inside the vacuum chamber between the first and second domes, a collimated energy source arranged in a compartmented housing and positioned proximate the second dome, wherein the second dome is between the collimated energy source and the substrate support. At least a portion of the second dome and the substrate support may be optically transparent to the collimated energy from the collimated energy source.
    Type: Grant
    Filed: March 19, 2014
    Date of Patent: August 21, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Joseph M. Ranish, Aaron Muir Hunter
  • Patent number: 10039619
    Abstract: A method of depositing a relatively thin film of bioinert material onto a surgical implant substrate, such as a dental implant. Chemical vapor deposition (CVD) may be used to deposit a layer of tantalum and/or other biocompatible materials onto a solid substrate comprised of an implantable titanium alloy, forming a biofilm-resistant textured surface on the substrate while preserving the material properties and characteristics of the substrate, such as fatigue strength.
    Type: Grant
    Filed: July 2, 2013
    Date of Patent: August 7, 2018
    Assignee: Zimmer, Inc.
    Inventors: Joseph R. Vargas, Steven Seelman
  • Patent number: 10043685
    Abstract: An apparatus is provided, by way of example, a heater for use in semiconductor processing equipment, that includes a base functional layer having at least one functional zone. A substrate is secured to the base functional layer, and a tuning layer is secured to the substrate opposite the base functional layer. The tuning layer includes a plurality of zones that is greater in number than the zones of the base functional layer, and the tuning layer has lower power than the base functional layer. Further, a component, such as a chuck by way of example, is secured to the tuning layer opposite the substrate. The substrate defines a thermal conductivity to dissipate a requisite amount of power from the base functional layer.
    Type: Grant
    Filed: January 7, 2016
    Date of Patent: August 7, 2018
    Assignee: Watlow Electric Manufacturing Company
    Inventors: Kevin Ptasienski, Kevin Robert Smith, Cal Thomas Swanson, Philip Steven Schmidt, Mohammad Nosrati, Jacob Lindley, Allen Norman Boldt, Sanhong Zhang, Louis P. Steinhauser, Dennis Stanley Grimard
  • Patent number: 10022745
    Abstract: A spin chuck according to the present invention is provided and is configured to eliminate the wrap of chemical over the wafer edge. The dual speed wafer spin chuck apparatus acts to prevent liquids from affecting the backside of a wafer during processing. An outer ring is placed around the wafer with a narrow gap between the two such that drops of liquid on the surface of the wafer will touch the outer ring as they move to the outermost edge of the wafer. By spinning this outer ring at high speed, centrifugal force causes these drops to be pulled off of the wafer and flung radially outward, thus preventing the liquid from affecting the backside of the wafer.
    Type: Grant
    Filed: July 29, 2014
    Date of Patent: July 17, 2018
    Assignee: VEECO PRECISION SURFACE PROCESSING LLC
    Inventors: William Gilbert Breingan, James K. Anders, Herman Itzkowitz
  • Patent number: 10009961
    Abstract: The present disclosure relates to a substrate support and a heating assembly comprising heaters for controlling the temperature uniformity of a susceptor of the assembly and a substrate, which may be used for thin film deposition on a substrate such as semi-conductor wafer, and a method of using the same is provided for improved temperature uniformity of a susceptor and a substrate heated by the heating assembly.
    Type: Grant
    Filed: July 18, 2014
    Date of Patent: June 26, 2018
    Assignee: ASM IP Holding B.V.
    Inventor: Sokol Ibrani
  • Patent number: 9991360
    Abstract: A method for fabricating a semiconductor structure includes forming a semiconductor layer over a substrate and forming an aluminum-silicon nitride layer upon the semiconductor layer. When the semiconductor layer in particular comprises a III-V semiconductor material such as a group III nitride semiconductor material or a gallium nitride semiconductor material, the aluminum-silicon nitride material provides a superior passivation in comparison with a silicon nitride material.
    Type: Grant
    Filed: June 28, 2010
    Date of Patent: June 5, 2018
    Assignee: CORNELL UNIVERSITY
    Inventors: James R. Shealy, Richard Brown
  • Patent number: 9988712
    Abstract: A device for holding at least one substrate in a process chamber of a CVD or PVD reactor includes a flat upper side on which at least one bearing area for the at least one substrate is located. An outline contour line corresponding to the outline contour of the substrate is flanked by positioning edges for positioning a respective section of an edge of the substrate. The device further includes carrying protrusions projecting from a bearing area base surface of the bearing area that is surrounded by the outline contour line. The carrying protrusions have contact surfaces that are raised in relation to the bearing area base surface, on which contact surfaces the substrate can be placed. In order to improve the temperature homogeneity of the surface of the substrate, each of the carrying protrusions originate from a recess of the bearing area base surface.
    Type: Grant
    Filed: November 13, 2015
    Date of Patent: June 5, 2018
    Assignee: AIXTRON SE
    Inventors: Eduardo Osman Piniero Sufan, Daniel Claessens, Adam Boyd
  • Patent number: 9986598
    Abstract: Substrate temperature control apparatus including groove-routed optical fibers. Substrate temperature control apparatus includes upper and lower members including grooves in one or both, and a plurality of optical fibers routed in the grooves. In one embodiment, the optical fibers are adapted to provide light-based pixelated heating. In another embodiment, embedded optical temperature sensors are adapted to provide temperature measurement. Substrate temperature control systems, electronic device processing systems, and methods including groove-routed optical fiber temperature control and measurement are described, as are numerous other aspects.
    Type: Grant
    Filed: June 12, 2015
    Date of Patent: May 29, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Matthew Busche, Wendell Boyd, Jr., Dmitry A. Dzilno, Vijay D. Parkhe, Michael R. Rice, Leon Volfovski
  • Patent number: 9976909
    Abstract: An apparatus and method for controlling stray radiation within a CVD chamber. A heater array disposed beneath a wafer carrier for radiatively heating of the wafer carrier includes a peripheral or outermost heating element or elements. Scattered radiation originating from a designated segment of the peripheral heating element(s) can be reduced locally by one of several mechanisms, including reducing the emission (e.g., operating temperature) of the designated segment, or capturing or deflecting a portion of the radiation originating from the designated segment. In one embodiment, an electrical connector on a resistance heating element provides the reduced emission from the designated segment. It has been found that radiation thermometers fixed proximate an axis that extends from the center of the wafer carrier and across the designated segment is subject to less stray radiation, thus providing a more reliable temperature reading in the optical wavelengths.
    Type: Grant
    Filed: May 29, 2015
    Date of Patent: May 22, 2018
    Assignee: Veeco Instruments Inc.
    Inventors: Gurary Tas, Jing Zhou, Daewon Kwon
  • Patent number: 9972501
    Abstract: Techniques are disclosed for methods and apparatuses for performing continuous-flow plasma enhanced atomic layer deposition (PEALD). Plasma gas, containing one or more component gases, is continuously flowed to a planar inductive coupled plasma source attached at an upper end of a cylindrical chamber. Plasma is separated from the ALD volume surrounding a wafer/substrate in the lower end of the chamber by a combination of a grounded metal plate and a ceramic plate. Each plate has a number of mutually aligned holes. The ceramic plate has holes with a diameter less than 2 Debye lengths and has a large aspect ratio. This prevents damaging plasma flux from entering the ALD volume into which a gaseous metal precursor is also pulsed. The self-limiting ALD reaction involving the heated substrate, the excited neutrals from the plasma gas, and the metal precursor produce an ultra-uniform, high quality film on the wafer. A batch configuration to simultaneously coat multiple wafers is also disclosed.
    Type: Grant
    Filed: March 14, 2017
    Date of Patent: May 15, 2018
    Assignee: Nano-Master, Inc.
    Inventor: Birol Kuyel
  • Patent number: 9957616
    Abstract: The present invention is directed providing a technique capable of reducing a time for stabilizing a temperature in a processing chamber. The technique includes: a substrate support configured to support a substrate; a thermal insulation unit disposed below the substrate support; a processing chamber configured to accommodate the substrate support and where the substrate is processed; a first heating unit disposed around the processing chamber and configured to heat an inside of the processing chamber from a lateral side thereof; and a second heating unit disposed between the substrate support and the thermal insulation unit inside the processing chamber, the second heating unit including a heater having a substantially annular shape and a suspending member extending downward from the heater, wherein a diameter of the heater is smaller than that of the substrate.
    Type: Grant
    Filed: February 24, 2016
    Date of Patent: May 1, 2018
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Hitoshi Murata, Yuichi Wada, Takashi Yahata, Hidenari Yoshida, Shuhei Saido
  • Patent number: 9951419
    Abstract: Method and apparatus for making atomic layer deposition on powdered materials are provided. A rotary vessel with tilted rotation axis can be used as the deposition chamber. The rotary vessel can be directly used as the deposition chamber, or the rotary vessel is positioned inside a vacuum chamber that serves as the deposition chamber. A hallow shaft can be used to deliver rotary motion and facilitate pumping. A tube can be inserted into the hollow shaft or the rotary vessel to introduce precursors. Gas diffuser and slowly increased pumping speed can be used to reduce the agitation caused by gas flow. Intermittent rotation, variable rotary speed, extruding structures on inner surface of the rotary vessel, and the addition of easy-to-agitate powder or beads of other materials can be used to enhance the powder agitation caused by rotation.
    Type: Grant
    Filed: September 3, 2012
    Date of Patent: April 24, 2018
    Inventors: Ying-Bing Jiang, Hongxia Zhang
  • Patent number: 9929029
    Abstract: Embodiments described herein relate to a substrate carrier system. The substrate carrier system includes a carrier for transferring a substrate within a multi-chamber processing system. The carrier may be placed in a load lock chamber for receiving the substrate, and the substrate is transferred to a processing chamber on the carrier. In the processing chamber, the carrier, with substrate, is disposed on a susceptor. The carrier can also enhance thermal control of the edge of the substrate in the processing chamber. The substrate carrier system further includes positioning features for repeatable positioning of the substrate in the processing chamber and repeatable positioning of the carrier in the load lock chamber and the processing chamber.
    Type: Grant
    Filed: October 13, 2016
    Date of Patent: March 27, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventor: Jeffrey Tobin
  • Patent number: 9905441
    Abstract: An oxidation process apparatus according to one embodiment of the present invention includes: a substrate holder provided in a processing chamber and having a substrate holding surface; a gas introduction unit for introducing an oxygen gas; a cylindrical member; and a substrate holder drive unit for changing relative positions of the substrate holder and the cylindrical member to allow the substrate holding surface and the cylindrical member to form an oxidation process space. The cylindrical member is provided so as to form a gap between the cylindrical member and the substrate holder during formation of the space. The oxygen gas is introduced restrictively into the space. The oxygen gas introduced from the gas introduction unit is evacuated through the gap.
    Type: Grant
    Filed: June 17, 2015
    Date of Patent: February 27, 2018
    Assignee: CANON ANELVA CORPORATION
    Inventors: Yoshimitsu Shimane, Takuya Seino
  • Patent number: 9890998
    Abstract: A substrate heating apparatus includes: a heating chamber, as well as a heating unit and a suspension holding unit which are provided in the heating chamber. The heating unit is provided at the bottom of the heating chamber, and the suspension holding unit holds the substrate in suspension above the heating unit. The apparatus avoids collision and friction on the substrate, and ensures uniform heating of the substrate.
    Type: Grant
    Filed: June 26, 2013
    Date of Patent: February 13, 2018
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Yu Jiao, Yanming Wang, Qingyang Yao, Jie Liu
  • Patent number: 9888528
    Abstract: Embodiments of substrate supports are provided herein. In some embodiments, a substrate support may include a body having a support surface; and a first heater disposed within the body and having a first heating coil and multiple heating zones, wherein a pitch of windings of the first heating coil vary among each of the multiple heating zones to define a predetermined heating ratio between the multiple heating zones.
    Type: Grant
    Filed: February 27, 2015
    Date of Patent: February 6, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Tomoharu Matsushita, Jallepally Ravi, Cheng-Hsiung Tsai, Aravind Kamath, Xiaoxiong Yuan, Manjunatha Koppa
  • Patent number: 9887071
    Abstract: The present disclosure relates to a semiconductor body etching apparatus having a multi-zone end point detection system. In some embodiments, the multi-zone end point detection system has a processing chamber that houses a workpiece that is etched according to an etching process. A plurality of end point detector (EPD) probes are located within the processing chamber. Respective EPD probes are located within different zones in the processing chamber, thereby enabling the detection of end point signals from multiple zones within the processing chamber. The detected end point signals are provided from the plurality of EPD probes to an advanced process control (APC) unit. The APC unit is configured to make a tuning knob adjustment to etching process parameters based upon the detected end point signals and to thereby account for etching non-uniformities.
    Type: Grant
    Filed: December 16, 2011
    Date of Patent: February 6, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chien-An Chen, Yen-Shuo Su, Ying Xiao, Chin-Hsiang Lin
  • Patent number: 9859146
    Abstract: A semiconductor manufacturing device includes a stage, a plurality of pins, and a driving unit. The stage includes a mounting surface. The mounting surface has a first region for mounting thereon a substrate, and a second region for mounting thereon a focus ring. The second region is provided to surround the first region. A plurality of holes is formed in the stage. The holes extend in a direction that intersects the mounting surface while passing through the boundary between the first region and the second region. The pins are provided in the respective holes. Each of the pins has a first and a second upper end surface. The second upper end surface is provided above the first upper end surface, and is offset towards the first region with respect to the first upper end surface. The driving unit moves the pins up and down in the aforementioned direction.
    Type: Grant
    Filed: August 13, 2012
    Date of Patent: January 2, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Shinji Himori, Yoshiyuki Kobayashi, Takehiro Kato, Etsuji Ito
  • Patent number: 9844834
    Abstract: A method for drilling holes in a part includes positioning the part relative to a laser source, applying a first stress to the part, and applying a laser from the laser source to the part to drill a hole therein, wherein the first stress which is present during the application of the laser counteracts a second stress induced by the application of the laser.
    Type: Grant
    Filed: October 20, 2014
    Date of Patent: December 19, 2017
    Assignee: UNITED TECHNOLOGIES CORPORATION
    Inventors: Richard L. Smith, Alan C. Barron
  • Patent number: 9848461
    Abstract: Embodiments of methods and apparatus for thermally treating a substrate are provided herein. In some embodiments, a thermal treatment apparatus includes a chamber body including an interior volume; a plurality of substrate supports disposed within the interior volume, wherein each of the plurality of substrate supports includes a heating element; a selectively sealable opening in the chamber body sized to allow substrates to be inserted into or removed from the interior volume; a robotic arm disposed in the interior volume to move substrates onto and off of the plurality of substrate supports; and a heating assembly configured to heat substrates disposed on the robotic arm.
    Type: Grant
    Filed: September 29, 2014
    Date of Patent: December 19, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventor: Keith A. Miller
  • Patent number: 9842748
    Abstract: Embodiments of the present disclosure provide a liner assembly including a plurality of individually separated gas passages. The liner assembly enables tenability of flow parameters, such as velocity, density, direction and spatial location, across a substrate being processed. The processing gas across the substrate being processed may be specially tailored for individual processes with a liner assembly according to embodiment of the present disclosure.
    Type: Grant
    Filed: January 17, 2017
    Date of Patent: December 12, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Mehmet Tugrul Samir, Shu-Kwan Lau
  • Patent number: 9834445
    Abstract: Disclosed are a porous graphene member having through-holes formed therein, a method for manufacturing the porous graphene member, and an apparatus for manufacturing the porous graphene member using the method. The method comprises: introducing a carbon source and a substitution reaction source into a deposition furnace; thermally decomposing the carbon source and the substitution reaction source simultaneously to generate carbon atoms and substitution atoms, respectively, wherein the carbon atoms are deposited on a substrate present within the deposition furnace to form a graphene film consisting of a monoatomic layer structure, and during the deposition of carbon atoms, the substitution atoms not only interfere with covalent bonds between the carbon atoms to cause crystal defects, but also substitute for parts of the carbon atoms to in situ form through-holes in the graphene, thereby creating the porous graphene member; and releasing the porous graphene member from the substrate.
    Type: Grant
    Filed: November 30, 2015
    Date of Patent: December 5, 2017
    Assignee: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Hee-Yeon Kim, Guk-Hyeon Kwon
  • Patent number: 9814097
    Abstract: A baking apparatus for priming a substrate is provided, which includes a chamber, a hot plate and a barrier element. The hot plate is in the chamber and configured to bake the substrate on the hot plate. The barrier element is in contact with a periphery of the substrate and the hot plate to prevent contamination on a lower surface of the substrate. Another baking apparatus for priming a substrate is also provided, which includes a chamber and a hot plate. The hot plate is in the chamber and in full contact with a lower surface of the substrate to prevent contamination thereon.
    Type: Grant
    Filed: April 14, 2014
    Date of Patent: November 7, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chien-Hung Wang, Ren-Jyh Leu, Shang-Wern Chang, Heng-Hsin Liu
  • Patent number: 9805932
    Abstract: First irradiation which causes an emission output from a flash lamp to reach its maximum value over a time period in the range of 1 to 20 milliseconds is performed to increase the temperature of a front surface of a semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. This achieves the activation of the impurities. Subsequently, second irradiation which gradually decreases the emission output from the maximum value over a time period in the range of 3 to 50 milliseconds is performed to maintain the temperature of the front surface within a ±25° C. range around the target temperature for a time period in the range of 3 to 50 milliseconds. This prevents the occurrence of process-induced damage while suppressing the diffusion of the impurities.
    Type: Grant
    Filed: April 29, 2016
    Date of Patent: October 31, 2017
    Assignee: SCREEN Holdings Co., Ltd.
    Inventors: Kazuhiko Fuse, Shinichi Kato, Kenichi Yokouchi
  • Patent number: 9797066
    Abstract: A susceptor is disclosed that can increase a heat capacity of a susceptor outer peripheral portion by enlarging the thickness of the susceptor and equalize thermal conditions for an outer peripheral portion and the inner peripheral portion of a wafer and a method for manufacturing an epitaxial wafer that uses this susceptor to perform vapor-phase epitaxy of an epitaxial layer. Back surface depositions have a close relationship with heat transfer that occurs between a wafer and a susceptor, i.e., a wafer outer peripheral portion has a higher temperature than a wafer inner peripheral portion since the wafer is in contact with or close to the susceptor at the wafer outer peripheral portion and hence the back surface depositions are apt to be generated. This is solved by equalizing thermal conditions for the wafer outer peripheral portion and the inner peripheral portion of the wafer back surface.
    Type: Grant
    Filed: November 10, 2011
    Date of Patent: October 24, 2017
    Assignee: SHIN-ETSU HANDOTAI CO., LTD.
    Inventor: Masato Ohnishi
  • Patent number: 9798308
    Abstract: A temperature controller that performs a temperature control on a plurality of temperature adjusters including a reference temperature adjuster to adjust a temperature of a semiconductor wafer includes a setpoint setting section that: sets a temperature detected by a master temperature detector as a control setpoint for a reference one of the temperature adjusters of a master loop, until a temporary setpoint below an actual control setpoint preset as a desired temperature of the semiconductor wafer is reached; and sets the actual control setpoint as the control setpoint for the master loop after the temporary setpoint is reached.
    Type: Grant
    Filed: January 9, 2015
    Date of Patent: October 24, 2017
    Assignee: KELK Ltd.
    Inventor: Kazuhiro Mimura
  • Patent number: 9771645
    Abstract: A deposition apparatus is disclosed. In one aspect, the apparatus includes a metal sheet of which an edge portion is integrally combined with a sheet frame and an electrostatic chuck attached to a bottom surface of the metal sheet and configured to pull a substrate based on a static electricity force. The apparatus also includes a metal mask placed below the electrostatic chuck, wherein an edge portion of the metal mask is combined with a mask frame, and wherein the metal mask has a predetermined patterned opening where the substrate is mounted to the upper surface thereof. The apparatus further includes a magnet plate placed above the metal sheet, and configured to pull the metal mask based on a magnetic force so as to attach the substrate to the electrostatic chuck.
    Type: Grant
    Filed: July 6, 2015
    Date of Patent: September 26, 2017
    Assignee: Samsung Display Co., Ltd.
    Inventor: Jeong Won Han
  • Patent number: 9766275
    Abstract: Methods and apparatus for determining the root-mean-square (RMS) voltage of an input voltage are provided herein. In some embodiments, an apparatus for determining the root-mean-square (RMS) voltage of an input voltage includes an amplifier to modify an amplitude of the input voltage signal; an amplitude detector, coupled to the amplifier, to transform the spectrum of the modified input voltage signal so that an increased portion of the signal is disposed within a desired frequency region; and a root-mean-square (RMS) converter, coupled to the amplitude detector, to determine the RMS voltage of the transformed input voltage signal, wherein a bandwidth of the RMS converter includes the desired frequency region.
    Type: Grant
    Filed: May 15, 2014
    Date of Patent: September 19, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventor: Oleg Serebryanov
  • Patent number: 9741594
    Abstract: Each of substrates which are sequentially loaded into an apparatus is transferred to one of empty (available) cooling units, and the cooling unit is reserved as a unit to be used for performing a cooling treatment after a post-exposure bake process for the substrate and the reservation information is stored. After one of the cooling units is reserved in advance before the post-exposure bake process, the substrate is transferred from the cooling unit to one of heating units without being subjected to a cooling treatment and is subjected to a post-exposure bake process therein. After the post-exposure bake process, the substrate is transferred from the heating unit to the reserved cooling unit which is reserved in advance and subjected to a cooling treatment therein.
    Type: Grant
    Filed: November 2, 2012
    Date of Patent: August 22, 2017
    Assignee: SCREEN Semiconductor Solutions Co., Ltd.
    Inventors: Katsumi Hashimoto, Manabu Nakanishi, Takashi Matsushita