Abstract: A support unit for supporting a substrate includes a heating member and a reflector, and the reflector includes a curved surface that reflects thermal energy generated by the heating member toward an edge region of the substrate.

Abstract: According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) heating a substrate to a first temperature while supporting the substrate on a substrate support, and supplying a process gas into a process vessel accommodating the substrate support; (b) lowering a temperature of a low temperature structure provided in the process vessel to a second temperature lower than the first temperature by supplying an inert gas or air to a coolant flow path provided in the process vessel after (a) for a predetermined time, wherein defects occur when a cleaning gas is supplied to the low temperature structure at the first temperature; and (c) cleaning the low temperature structure by supplying the cleaning gas into the process vessel after (b).

Abstract: In various aspects, a preheater, a directed flow chemical vapor infiltration/chemical vapor deposition (CVI/CVD) furnace, and/or an installation jig are described. In one example, a preheater includes a central inlet; a circuitous gas flow path downstream of the central inlet; a plenum section downstream of the circuitous gas flow path; and an outlet diffuser plate defining a plurality of apertures fluidly configured to couple the preheater to a furnace working zone, wherein the outlet diffuser plate is downstream of the plenum section, wherein the circuitous gas flow path is fluidly coupled to the plenum section by an outer circumferential slot opening.

Abstract: A substrate processing apparatus capable of minimizing the effect of a filling gas in a lower space on the processing of a substrate includes: a substrate supporting unit; at least one ring surrounding the substrate supporting unit; a processing unit on the substrate supporting unit; and an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit, wherein a first gas in the reaction space is transmitted to the exhaust unit through a first channel, a second gas in a lower space below the substrate supporting unit is transmitted to the exhaust unit through a second channel, and the first channel and the second channel are separated by the at least one ring.

Abstract: Exemplary support assemblies may include a top puck and a backing plate coupled with the top puck. The support assemblies may include a cooling plate coupled with the backing plate. The support assemblies may include a heater coupled between the cooling plate and the backing plate. The support assemblies may also include a back plate coupled with the backing plate about an exterior of the backing plate. The back plate may at least partially define a volume, and the heater and the cooling plate may be housed within the volume.

Abstract: Techniques herein include a process chamber for depositing thin films to backside surfaces of wafers to reduce wafer bowing and distortion. A substrate support provides an annular perimeter seal around the bottom and/or side of the wafer which allows the majority of the substrate backside to be exposed to a process environment. A supported wafer separates the chamber into lower and upper chambers that provide different process environments. The lower section of the processing chamber includes deposition hardware configured to apply and remove thin films. The upper section can remain a chemically inert environment, protecting the existing features on the top surface of the wafer. Multiple exhausts and differential pressures are used to prevent deposition gasses from accessing the working surface of a wafer.

Abstract: A through via structure includes a through via and a capping pattern. The through via includes a metal pattern extending in a vertical direction, and a barrier pattern on a sidewall and a lower surface of the metal pattern. The capping pattern contacts an upper surface of the through via. A lowermost surface of an edge portion of the capping pattern is not higher than a lowermost surface of a central portion of the capping pattern.

Abstract: The invention relates to an injector configured for arrangement within a reaction chamber of a substrate processing apparatus to inject gas in the reaction chamber. The injector may be elongated along a first axis and configured with an internal gas conduction channel extending along the first axis and provided with at least one gas entrance opening and at least one gas exit opening. The injector may have a width extending along a second axis perpendicular to the first axis substantially larger than a depth of the injector extending along a third axis perpendicular to the first and second axis. The wall of the injector may have a varying thickness.

Abstract: A film-forming device which includes a chamber having a horizontal central axis, capable of maintaining a vacuum, and movable along the horizontal central axis, the chamber including an inner chamber and an outer chamber that houses the inner chamber; a workpiece holder that aligns and holds workpieces to be processed in multiple stages in the inner chamber; and a heater that heats an inside of the chamber.

Abstract: Provided herein is a tobacco packaging material, comprising a paper material coated with at least one polymer layer. The polymer layer comprises at least one repulpable polymer, and wherein the tobacco packaging material has a water vapor transmission rate (WVTR) that is at least 90% lower than the paper material. Further provided is a tobacco package comprising the tobacco packaging material, wherein the tobacco package is substantially free of any foil inner liner or polypropylene film. Further described is a method for making the tobacco packaging material, comprising extrusion coating at least one repulpable polymer onto a paper material to form a polymer layer, and optionally further depositing at least one atomic layer deposition (ALD) layer that comprises a metal oxide.

Abstract: A method for treating a carbon or ceramic yarn includes forming a coating on the yarn in a reaction zone of a reactor by heating a segment of the yarn in the presence of a gas phase in a microwave field, wherein the gas phase includes a mixture of a diluent gas and a coating precursor in the vapor state, and wherein the gas phase is formed at least by introducing the diluent gas into the reactor and mixing the introduced diluent gas with the coating precursor in the reactor before the reaction zone.

Abstract: Described herein is a technique capable of adjusting an inner pressure of a process chamber into a high vacuum state in a short time. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber; a main exhaust line including a first pipe, a first opening degree adjusting valve, an opening/closing valve and a pressure sensor; a bypass exhaust line including a second pipe and a second opening degree adjusting valve; and a controller configured to adjust an inner pressure of the process chamber by: (a) adjusting an opening degree of the second opening degree adjusting valve; (b) closing the second opening degree adjusting valve and opening the opening/closing valve and the first opening degree adjusting valve; and (c) closing the opening/closing valve and the first opening degree adjusting valve and adjusting the opening degree of the second opening degree adjusting valve.

Abstract: There is provided an injector that extends in a longitudinal direction, including: a gas introduction part having a circular or a regular polygonal shape in a cross section perpendicular to the longitudinal direction and having no discharge holes; and a gas supply part having a protruded portion in one direction in the cross section perpendicular to the longitudinal direction, and having a plurality of discharge holes formed in a leading end of the protruded portion along the longitudinal direction, wherein a first end of the gas supply part in the longitudinal direction is connected to the gas introduction portion.

Abstract: A wafer chuck includes a base made of a ceramic containing silicon carbide. The base has an oxidation-treated layer, and a film made of diamond-like carbon (DLC) is formed on an outermost surface of the base.

Abstract: A photoresist apparatus and a method are provided. The photoresist apparatus includes a pre-baking apparatus. The pre-baking apparatus includes: a hot-plate, a first cover over the hot-plate, a second cover over the first cover, a first heating element extending along a topmost surface of the first cover, and a second heating element extending along a topmost surface of the second cover.

Abstract: A substrate processing apparatus including a process chamber; a susceptor in the process chamber; and an inner edge ring and an outer edge ring on the susceptor, wherein the inner edge ring includes a semiconductor, the outer edge ring includes an insulator, an upper surface of the outer edge ring is at a higher level than an upper surface of the inner edge ring, and the outer edge ring has an overhang extending onto the inner edge ring.

Abstract: A CVD apparatus for manufacturing a III-nitride-based layer having a rotating wafer carrier positioned inside a reaction chamber that receives a mixture of a nitrogen gas source and a group III element gas source. Recesses are formed within the wafer carrier, each including a satellite disc of thickness x for accepting a wafer of thickness t. The satellite disc includes a peripheral notch of height a, and a notch thickness of x?a=b. A peripheral retaining ring includes a vertical rise portion extending a distance of e+f and a laterally-extending portion, the laterally-extending portion engaging the satellite disc notch. A gap c is formed between the substrate and a surface of the satellite disc. The relationship of a+b+c+t=b+e+f is satisfied such that laminar flow occurs in the region of the retaining ring.

Abstract: A method and a vacuum-coating system (10) for coating a strip-shaped material (11), in particular made of metal, are disclosed. Thereby, the strip-shaped material (11) is moved over a conveying section (12) in a transport direction (T) and vacuum-coated within a coating chamber (14) in which a vacuum is applied. When viewed in the transport direction (T) of the strip-shaped material (11), at least one trimming shear (38) is arranged upstream of the coating chamber (14), with which the strip-shaped material (11) is trimmed at at least one strip edge, preferably at both strip edges, in order to produce a constant width for the strip-shaped material (11) over its longitudinal extension.

Abstract: Embodiments described herein generally relate to apparatus for fabricating semiconductor devices. A gas injection apparatus is coupled to a first gas source and a second gas source. Gases from the first gas source and second gas source may remain separated until the gases enter a process volume in a process chamber. A coolant is flowed through a channel in the gas injection apparatus to cool the first gas and the second gas in the gas injection apparatus. The coolant functions to prevent thermal decomposition of the gases by mitigating the influence of thermal radiation from the process chamber. In one embodiment, the channel surrounds a first conduit with the first gas and a second conduit with the second gas.

Abstract: Susceptor assemblies comprising a susceptor base and a plurality of pie-shaped skins thereon are described. A pie anchor can be positioned in the center of the susceptor base to hold the pie-shaped skins in place during processing.

Abstract: A substrate processing apparatus including a process chamber; a susceptor in the process chamber; and an inner edge ring and an outer edge ring on the susceptor, wherein the inner edge ring includes a semiconductor, the outer edge ring includes an insulator, an upper surface of the outer edge ring is at a higher level than an upper surface of the inner edge ring, and the outer edge ring has an overhang extending onto the inner edge ring.

Abstract: An apparatus for treating a substrate includes a process chamber having a process space therein, a support unit that supports the substrate in the process space, a heating member that heats the substrate supported on the support unit, and an exhaust unit that evacuates the process space. The exhaust unit includes an exhaust duct and a heat retention unit having a retention space that retains heat released from the process space. The retention space surrounds an adjacent area located adjacent to the process chamber in the exhaust duct.

Abstract: Semiconductor systems and methods may include a semiconductor processing chamber having a gas box defining an access to the semiconductor processing chamber. The chamber may include a spacer characterized by a first surface with which the gas box is coupled, and the spacer may define a recessed ledge on an interior portion of the first surface. The chamber may include a support bracket seated on the recessed ledge that extends along a second surface of the spacer. The chamber may also include a gas distribution plate seated on the support bracket.

Abstract: A technique for improving uniformity in a plane of a substrate is provided. A substrate processing apparatus according an aspect of the present disclosure includes a processing container having a substantially cylindrical shape, a gas nozzle extending in a vertical direction along an inside of an inner wall of the processing container and forming a gas flow path therein, and a gas ejector provided on the processing container and communicating with the gas flow path, the gas ejector being configured to distribute a gas introduced from the gas nozzle and to eject the gas from an outer peripheral portion of the processing container.

Abstract: A method includes forming an inner chamber in a process chamber of a plasma processing apparatus, the inner chamber having smaller volume than the process chamber. At least one gas is introduced into the inner chamber, and flow of the at least one gas into the inner chamber is measured. The flow of the at least one gas is adjusted to a desired rate, and a wafer is processed by the at least one gas at the desired rate while the inner chamber is not formed.

Abstract: Provided is a batch-type substrate processing apparatus. The substrate processing apparatus includes a vertical reaction tube having an internal space for receiving a substrate boat in which a substrate is stacked in multiple stages, a deposition gas supply unit configured to supply a deposition gas inside the reaction tube, a heater disposed outside the reaction tube to provide a thermal energy inside the reaction tube, and an adhesion layer coated on an inner wall of the reaction tube and to which a deposition by-product layer by an excess deposition gas is attached.

Abstract: Embodiments of the disclosure relate to faceplates for a processing chamber. In one example, a faceplate includes a body having a plurality of apertures formed therethrough. A heating element is disposed within the body, and the heating element circumscribes the plurality of apertures. A support ring is disposed the body. The support ring circumscribes the heating element. The support ring includes a main body and a cantilever extending radially inward from the main body. The cantilever contacts the body of the faceplate.

Abstract: Pumping liners for use in an apparatus for depositing a material on a work piece by chemical vapor deposition includes a plurality of unevenly spaced apertures are disclosed. Uneven spacing of the plurality of apertures produces a uniform flow of processing gases within a processing chamber with which the pumping liner is associated. Films of materials deposited onto a work piece by chemical vapor deposition techniques using disclosed pumping liners exhibit desirable properties such as uniform thickness and smooth and uniform surfaces.

Abstract: A plasma processing device that includes a processing chamber which is disposed in a vacuum vessel and is decompressed internally, a sample stage which is disposed in the processing chamber and on which a sample of a process target is disposed and held, and a plasma formation unit which forms plasma using process gas and processes the sample using the plasma, and the plasma processing device includes: a dielectric film which is disposed on a metallic base configuring the sample stage and connected to a ground and includes a film-like electrode supplied with high-frequency power internally; a plurality of elements which are disposed in a space in the base and have a heat generation or cooling function; and a feeding path which supplies power to the plurality of elements, wherein a filter to suppress a high frequency is not provided on the feeding path.

Abstract: Methods and apparatus for an upper reflector assembly for use in a process chamber are provided herein. In some embodiments, an upper reflector assembly for use in a process chamber includes a reflector mounting ring; and upper reflector plate coupled to the reflector mounting ring and having an upper surface and lower surface, wherein the lower surface includes a plurality of linear channels extending substantially parallel to each other across the lower surface, and wherein the upper reflector plate includes air cooling slots extending from the upper surface to the lower surface.

Abstract: A method and system for producing graphene on a copper substrate by modified chemical vapor deposition (AP-CVD), comprising arranging two copper sheets (40) in a parallel manner and separated by a ceramic material (30, placing said two copper sheets (40) inside an open chamber consisting of a glass chamber (10), heating the two copper sheets (40) to a predetermined temperature by using an electromagnetic induction heater (20), supply a mixture of methane and argon flows to the upper face (18) of said glass cylindrical chamber (10), continually monitoring the temperature of the two copper sheets (40), heating to about 1,000° C. for a predetermined period of time using the electromagnetic induction heater (20), and cooling to room temperature under the same methane and argon flows.

Abstract: A film deposition apparatus includes a body formed with openings and cavity, a spray assembly, and a gas assembly. The spray assembly sprays a precursor stream into the cavity for forming a film on a substrate. The gas assembly injects one or more gases into the cavity through the openings to shape the precursor stream and improve directionality and utilization of the precursor stream. The film deposition apparatus can operate with one or more plasma generators to form a laminated film on the substrate. The laminated film may have three layers of film: a first film formed through reaction of a first precursor with plasma, a second film being a composite of the first precursor and a second precursor, and a third film formed through sonification of the second precursor on top of the second film. The second precursor can infiltrate into the first film and fill defects therein.

Abstract: A preheat ring (126) for use in a chemical vapor deposition system includes a first portion and a second portion selectively coupled to the first portion such that the first and second portions combine to form an opening configured to receive a susceptor therein. Each of the first and second portions is independently moveable with respect to each other.

Abstract: The disclosure relates to a sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to accommodate at least one substrate; a first precursor flow path to provide the first precursor to the reaction chamber when a first flow controller is activated; a second precursor flow path to provide a second precursor to the reaction chamber when a second flow controller is activated; a removal flow path to allow removal of gas from the reaction chamber; a removal flow controller to create a gas flow in the reaction chamber to the removal flow path when the removal flow controller is activated; and, a sequence controller operably connected to the first, second and removal flow controllers and the sequence controller being programmed to enable infiltration of an infiltrateable material provided on the substrate in the reaction chamber. The apparatus may be provided with a heating system.

Abstract: A transportation system for semiconductor module base plates includes a plurality of spacer elements. Each spacer element includes a distance holding element, a first pin on a first side of the distance holding element, and a second pin on a second side of the distance holding element. Each spacer element is configured to be arranged between two of a plurality of semiconductor module base plates. Each of the first pin and the second pin is configured to engage with a corresponding counterpart of one of the semiconductor module base plates when the corresponding spacer element is arranged between two of the semiconductor module base plates.

Abstract: A ceramic heater includes a ceramic substrate including, on an upper surface, a wafer mount surface that receives a wafer, and a heater electrode embedded in an inside of the ceramic substrate. The ceramic substrate includes a core portion and a surface layer portion disposed on a surface of the core portion. The surface layer portion has volume resistivity higher than volume resistivity of the core portion. The core portion has thermal conductivity higher than thermal conductivity of the surface layer portion. The surface layer portion is disposed over an area of at least one of a side surface of the core portion and an upper surface of the core portion, the area being not covered with the wafer.

Abstract: A substrate processing method includes supplying processing gas from a plurality of gas holes formed along a longitudinal direction of an injector, which extends in a vertical direction along an inner wall surface of a processing container and is rotatable around a rotational axis extending in the vertical direction, to perform a predetermined process on a substrate accommodated in the processing container. The predetermined process includes a plurality of operations, and a supply direction of the processing gas is changed by rotating the injector in accordance with the operations.

Abstract: Susceptor assemblies comprising a susceptor base and a plurality of pie-shaped skins thereon are described. A pie anchor can be positioned in the center of the susceptor base to hold the pie-shaped skins in place during processing.

Abstract: A system and method of heating a workpiece to a desired temperature is disclosed. This system and method consider the physical limitations of the temperature device, such as time lag, temperature offset, and calibration, in creating a hybrid approach that heats the workpiece more efficiently. First, the workpiece is heated using open loop control to heat the workpiece to a threshold temperature. After the threshold temperature is reach, a closed loop maintenance mode is utilized. In certain embodiments, an open loop maintenance mode is employed between the open loop warmup mode and the closed loop maintenance mode. Additionally, a method of calibrating a pyrometer using a contact thermocouple is also disclosed.

Abstract: An electrostatic chuck includes a ceramic body and adapter objects. The adapter objects collectively form a plurality of openings distributed over a bottom surface of the ceramic body at different distances from a center of a circle defined by the bottom surface of the ceramic body.

Abstract: The present invention provides a method for cleaning a component for use in an ultra-high vacuum. The method may comprise the steps of placing the component to be cleaned in a vacuum furnace chamber; plasma cleaning the component at a temperature of greater than about 80° C.; and evacuating the chamber to a pressure of less than about 10E-5 mbar. Apparatus for performing such methods and kits comprising said components are also provided.

Abstract: The present disclosure describes an apparatus. The apparatus includes a chuck for placing an object thereon, a gas passage extending along a periphery of an outer sidewall of the chuck and separating the chuck into an inner portion and a sidewall portion, and a plurality of gas holes through the sidewall portion and configured to connect a gas external to the chuck to the gas passage.

Abstract: Exemplary semiconductor processing chambers may include a chamber body. The chambers may include a showerhead. The chambers may include a substrate support. The substrate support may include a platen characterized by a first surface facing the showerhead. The substrate support may include a shaft coupled with the platen along a second surface of the platen opposite the first surface of the platen. The shaft may extend at least partially through the chamber body. A coating may extend conformally about the first surface of the platen, the second surface of the platen, and about the shaft.

Abstract: Embodiments of the present disclosure generally relate to substrate support assemblies used in semiconductor device manufacturing. In one embodiment, a substrate support includes a ceramic body having at least one aperture formed therein defined by a sidewall. A plurality of recesses extend into the sidewall, a rod member is disposed in the at least one aperture, and an eyelet member is circumferentially disposed about the rod member. The eyelet member has a plurality of protrusions extending outwardly therefrom, each disposed in a corresponding recess of the plurality of recesses. A first portion of each protrusion is in contact with a sidewall of the respective recess of the ceramic body and a second portion of each protrusion is separated by a gap from the sidewall of the respective recess of the ceramic body. A first portion of a brazing material is disposed between an upper surface of the at least one aperture and an end of the rod member.

Abstract: Aspects of the present disclosure relate generally to isolator devices, components thereof, and methods associated therewith for substrate processing chambers. In one implementation, a substrate processing chamber includes an isolator ring disposed between a pedestal and a pumping liner. The isolator ring includes a first surface that faces the pedestal, the first surface being disposed at a gap from an outer circumferential surface of the pedestal. The isolator ring also includes a second surface that faces the pumping liner and a protrusion that protrudes from the first surface of the isolator ring and towards the outer circumferential surface of the pedestal. The protrusion defines a necked portion of the gap between the pedestal and the isolator ring.

Abstract: A graphene synthesis chamber includes: a chamber case in which a substrate including a metal thin film is placed; a gas supply unit which supplies at least one gas comprising a carbon gas into an inner space of the chamber case; a main heating unit which emits at least one light to the inner space to heat the substrate; and at least one auxiliary heating unit which absorbs the at least one light and emits radiant heat toward the substrate.

Abstract: An embodiment of a substrate placing part relates to a substrate placing part that is arranged in a substrate processing apparatus. The substrate placing part is divided into a plurality of inner sections that have an inner heating wire and an outer heating wire; and an outer section that is arranged in an edge thereof, that surrounds the inner sections, and that includes the outer heating wire, wherein the inner heating wire is disposed in the same inner section and has a first gap in at least a partial section thereof, the respective inner heating wires disposed in the different inner sections are disposed to have a second gap in a part in which the inner heating wires are parallel to one another, the inner heating wire and the outer heating wire are disposed to have a third gap in a part in which the inner heating wire and the outer heating wire are parallel to one another, and the first gap may be smaller than the second gap.

Abstract: Embodiments herein include void-free material depositions on a substrate (e.g., in a void-free trench-filled (VFTF) component). In some embodiments, a method may include providing a plurality of device structures extending from a base, each of the plurality of device structures including a first sidewall opposite a second sidewall and a top surface extending between the first and second sidewalls, and providing a seed layer over the plurality of device structures. The method may further include forming a dielectric layer along just the top surface and along an upper portion of the first and second sidewalls using an angled deposition delivered to the plurality of device structures at a non-zero angle of inclination relative to a perpendicular extending from an upper surface of the base, and forming a fill material within one or more trenches defined by the plurality of device structures.

Abstract: In a measurement method, a terminal is brought into contact with an electrode in an electrostatic chuck in contact with a substrate that is grounded. Further, the terminal, the electrostatic chuck and the substrate are fixed, and a current value and a voltage value are measured using an ammeter and a voltmeter, respectively, that are connected to the terminal. In addition, whether or not the terminal and the electrode are electrically connected is determined from a slope of the current value and/or a peak current value based on the measured current value and the voltage value.

Abstract: The invention provides a wafer heating pedestal including a shaft connected to a bottom of a plate. The shaft holds a contact array being in contact with plural contact pads of the plate. The contact array includes plural contact columns.