Substrate Heater Patents (Class 118/725)
  • Patent number: 11143964
    Abstract: A substrate treating method for performing a heat treatment of a substrate that has a treated film formed thereon in a heat treating space of a heat treating chamber. The method includes an exhaust step of exhausting gas within the heat treating space formed by a cover enclosing surroundings of a heat treating plate; an inert gas supply step of supplying inert gas from an upper portion of the heat treating space into the heat treating space and supplying inert gas into a gap between an outer peripheral surface of the heat treating plate and an inner wall of the cover; and a heat treating step of performing the heat treatment of the substrate in the heat treating space. The heat treating step is performed after the exhaust step and the inert gas supply step.
    Type: Grant
    Filed: May 11, 2020
    Date of Patent: October 12, 2021
    Inventors: Yasuhiro Fukumoto, Yuji Tanaka, Takeharu Ishii, Tomohiro Matsuo
  • Patent number: 11088009
    Abstract: According to various embodiments, a support table may include: a baseplate including a support structure, the support structure defining a support region over the baseplate to support at least one of a workpiece or a workpiece carrier therein; and one or more light-emitting components disposed between the baseplate and the support region. The one or more light-emitting components are configured to emit light into the support region.
    Type: Grant
    Filed: July 17, 2019
    Date of Patent: August 10, 2021
    Assignee: Infineon Technologies AG
    Inventors: Bernhard Goller, Walter Leitgeb, Daniel Brunner, Lukas Ferlan, Markus Ottowitz
  • Patent number: 11066743
    Abstract: Methods of selectively depositing ruthenium are described. The preferred deposition surface changes based on the substrate temperature during processing. At high temperatures, ruthenium is deposited on a first surface of a conductive material over a second surface of an insulating material. At lower temperatures, ruthenium is deposited on an insulating surface over a conducting surface.
    Type: Grant
    Filed: December 14, 2018
    Date of Patent: July 20, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Yihong Chen, Yong Wu, Srinivas Gandikota, Abhijit Basu Mallick
  • Patent number: 11062886
    Abstract: An apparatus for controlling wafer uniformity is disclosed. In one example, the apparatus includes: a plurality of temperature control elements and a processor. Each of the temperature control elements corresponds to a different portion of a wafer respectively such that the temperature control elements correspond to different portions of the wafer. Each of the temperature control elements is configured to individually control temperature of a corresponding portion of the wafer. The processor determines at least one portion of the wafer for temperature uniformity control, and instruct at least one of the temperature control elements, corresponding to the at least one portion, to adjust temperature of the at least one portion for controlling temperature uniformity of the wafer.
    Type: Grant
    Filed: February 23, 2018
    Date of Patent: July 13, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hsiao-Hua Peng, Hann-Ru Chen
  • Patent number: 11056372
    Abstract: Embodiments described herein relate to a substrate support and techniques for controlling a temperature of the same. The substrate support includes a heating element and an over temperature switch disposed therein. The heating element heats the substrate support and a substrate disposed thereon. The over temperature switch controls a temperature of the heating element and the substrate support. The over temperature switch is operable to switch states in response to a temperature of the substrate support exceeding a predefined temperature.
    Type: Grant
    Filed: June 20, 2019
    Date of Patent: July 6, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Brian T. West, Soundarrajan Jembulingam, Dinkesh Huderi Somanna
  • Patent number: 11043403
    Abstract: The inventive concept relates to a substrate support unit. The substrate support unit includes a chuck stage having an inner space defined by a base surface and sidewalls, a heating unit provided in the inner space, the heating unit including a base plate having a disk shape with an opening in the center and a heat generation part mounted on the base plate and having heating light sources that emit light energy, a quartz window that covers the inner space and has an upper surface on which a substrate is placed, and a reflective member that reflects light energy lost in a lateral direction of the chuck stage toward the substrate.
    Type: Grant
    Filed: April 1, 2019
    Date of Patent: June 22, 2021
    Assignee: SEMES CO., LTD.
    Inventor: Hyun-Su Kim
  • Patent number: 11032945
    Abstract: Disclosed herein is a heat shield assembly for a processing chamber. The processing chamber includes a body having sidewalls, a bottom and a lid that define an interior volume. The heat shield assembly is disposed in the interior volume, and includes a heat shield and a preheat member. The preheat member includes an inner circumference, and is positioned below the heat shield. A susceptor is disposed in the interior volume and configured to support a substrate, and is positioned within the inner circumference of the preheat member. An opening is positioned between the susceptor and the preheat member. A first section of the opening is proximate to a gas inlet, and is covered by the heat shield. A second section of the annular opening is proximate a gas outlet, and is not covered by the heat shield member.
    Type: Grant
    Filed: September 10, 2019
    Date of Patent: June 8, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Shinichi Oki, Yoshinobu Mori
  • Patent number: 11004693
    Abstract: A plurality of flash lamps that irradiate a semiconductor wafer with flash light are arrayed in a plane. The array of the plurality of flash lamps is divided into two zones: a central zone including a region opposed to a central portion of the semiconductor wafer to be treated, and a peripheral zone outside the central zone. During flash light irradiation, an emission time of a flash lamp belonging to the peripheral zone is set to be longer than an emission time of a flash lamp belonging to the central zone. Thus, a greater amount of flash light is applied to the peripheral portion of the semiconductor wafer, where a temperature drop is relatively likely to occur, than to the central portion thereof, thus preventing a relative temperature drop in the peripheral portion of the semiconductor wafer during flash heating.
    Type: Grant
    Filed: May 5, 2016
    Date of Patent: May 11, 2021
    Assignee: SCREEN Holdings Co., Ltd.
    Inventor: Kazuhiko Fuse
  • Patent number: 10974216
    Abstract: A device for removing polycrystalline silicon rod pairs from a Siemens reactor has a body dimensioned to fit over a single rod pair. Once the rod pair is within the body, the body and enclosed rod pair is removed.
    Type: Grant
    Filed: January 15, 2020
    Date of Patent: April 13, 2021
    Assignee: Wacker Chemie AG
    Inventors: Tobias Weiss, Udo Almasy, Stefan Faerber, Reiner Pech
  • Patent number: 10968517
    Abstract: There is provided a cleaning technique that includes supplying a hydrogen fluoride gas into a process vessel, in which a process of forming an oxide film containing at least one of carbon and nitrogen on a substrate has been performed, to remove a deposit containing at least one of carbon and nitrogen adhered to an interior of the process vessel, wherein the act of supplying the hydrogen fluoride gas is performed under a condition in which an etching rate of the deposit adhered to the interior of the process vessel is higher than an etching rate of a quartz member in the process vessel.
    Type: Grant
    Filed: November 19, 2018
    Date of Patent: April 6, 2021
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Shin Sone, Masaya Nagato, Kenji Kameda, Kotaro Konno
  • Patent number: 10957562
    Abstract: A heating device includes a base body that has a placement surface for placing a wafer thereon and a back surface that is on an opposite side of the placement surface; a heating resistor that is embedded in the base body; a cylindrical supporting body that has one end surface and the other end surface, the one end surface being connected to the back surface of the base body, the other end surface being on an opposite side of the one end surface; and a supporting-body channel that includes a portion extending in a direction from the other end surface to the one end surface of the cylindrical supporting body, and that is formed within a peripheral wall of the cylindrical supporting body. The supporting-body channel includes an opening portion that opens inwardly from an outer peripheral surface of the cylindrical supporting body.
    Type: Grant
    Filed: October 25, 2017
    Date of Patent: March 23, 2021
    Assignee: NGK SPARK PLUG CO., LTD.
    Inventor: Noriaki Tokusho
  • Patent number: 10945312
    Abstract: A heating device includes a holding member and having thereinside a plurality of resistive heating elements connected to different pairs of electrode terminals, and a columnar support member joined to the holding member. A first resistive heating element is disposed throughout a first region including a region that overlaps the columnar support member as viewed from the first direction and a second region that is located around an outer periphery of the first region and that does not overlap the columnar support member as viewed from the first direction. A second resistive heating element is disposed throughout the first region and the second region, and an amount of heat generated by the second resistive heating element per unit area of the first region is larger than an amount of heat generated by the second resistive heating element per unit area of the second region.
    Type: Grant
    Filed: September 28, 2017
    Date of Patent: March 9, 2021
    Assignee: NGK SPARK PLUG CO., LTD.
    Inventor: Jun Kurano
  • Patent number: 10903096
    Abstract: Provided herein are approaches for cooling a process chamber window. In some embodiments, a system for process chamber window cooling may include a process chamber for processing a wafer, wherein the process chamber includes a window. In some embodiments, the window allows light from a lamp assembly to be delivered to the wafer. The system further includes a cooling apparatus operable with the process chamber, the cooling apparatus for delivering a gas to the window. The cooling apparatus includes a support ring supporting the window. The support ring includes a perimeter wall, and a plurality of slots formed through the perimeter wall. The plurality of slots may deliver a gas (e.g., air) across the window.
    Type: Grant
    Filed: July 3, 2018
    Date of Patent: January 26, 2021
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Paul E. Pergande, James D. Strassner
  • Patent number: 10903093
    Abstract: A heating device includes: a baseplate; a faceplate provided above the baseplate, the faceplate including a film heater configured to heat a wafer mounted on an upper surface of the faceplate; a sleeve provided between the baseplate and the faceplate, the sleeve including a sleeve body having a vertical through-hole; and a support bolt penetrating the through-hole in the sleeve to support the faceplate on the baseplate, in which a distance from a central axis of the through-hole in the sleeve to a flat surface of an outer portion of the sleeve is less than a distance from the central axis of the through-hole to a locking surface of an inner portion of the sleeve.
    Type: Grant
    Filed: March 4, 2016
    Date of Patent: January 26, 2021
    Assignee: KELK Ltd.
    Inventors: Kazuhiko Kubota, Atsushi Kinoshita, Koji Maeda, Keisuke Ishii
  • Patent number: 10883172
    Abstract: Described herein is a technique capable of improving the quality of a template. According to the technique described herein, there is provided a method of manufacturing a lithography template, including: (a) loading a substrate into a process chamber, the substrate having a pattern region and a non-contacting region at center and peripheral portions thereof, respectively; (b) placing the substrate on a substrate support having a protruding portion and a bottom portion such that a back surface of the non-contacting region of the substrate is supported by the protruding portion; (c) heating the substrate by supplying a first hot gas into a space defined by the protruding portion and the bottom portion while supplying a second hot gas into the process chamber; and (d) processing the substrate after performing (c) by supplying a process gas into the process chamber while supplying the first hot gas into the space.
    Type: Grant
    Filed: January 31, 2018
    Date of Patent: January 5, 2021
    Assignee: Kokusai Electric Corporation
    Inventor: Naofumi Ohashi
  • Patent number: 10886157
    Abstract: A wafer holding unit includes a disk-shaped ceramic substrate having a wafer mounting surface on an upper surface of the substrate, an RF electrode, for example, embedded within the substrate, a metal terminal inserted from a lower surface of the substrate, and a connecting terminal which electrically connects the RF electrode and the metal terminal with each other. The connecting terminal is constituted by a ceramic member and a metal layer. The ceramic member is made of the same material as the substrate and preferably has a truncated conical shape. The metal layer covers a surface of the ceramic member. An upper end of the metal layer is connected to the RF electrode, while a lower end of the metal layer is connected to the metal terminal with a metal member interposed therebetween.
    Type: Grant
    Filed: July 1, 2016
    Date of Patent: January 5, 2021
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Koichi Kimura, Shigenobu Sakita, Kenji Shinma, Daisuke Shimao, Katsuhiro Itakura, Masuhiro Natsuhara, Akira Mikumo
  • Patent number: 10876205
    Abstract: Herein disclosed are systems and methods related to solid source chemical vaporizer vessels and multiple chamber deposition modules. In some embodiments, a solid source chemical vaporizer includes a housing base and a housing lid. Some embodiments also include a first and second tray configured to be housed within the housing base, wherein each tray defines a first serpentine path adapted to hold solid source chemical and allow gas flow thereover. In some embodiments, a multiple chamber deposition module includes first and second vapor phase reaction chambers and a solid source chemical vaporizer vessel to supply each of the first and second vapor phase reaction chambers.
    Type: Grant
    Filed: September 30, 2016
    Date of Patent: December 29, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Mohith Verghese, Eric James Shero, Carl Louis White, Kyle Fondurulia
  • Patent number: 10867832
    Abstract: Apparatus for holding semiconductor wafers during semiconductor manufacturing processes are disclosed. In one embodiment, the apparatus comprises a heat-conductive layer disposed on a supporting base. The apparatus also comprises a plurality of holes formed through the heat-conductive layer and the supporting base. The apparatus further comprises a plurality of heat-conductive lift pins that extend through the holes over the heat-conductive layer at the top end, and make a direct contact with a wafer substrate. The heat-conductive layer and the lift pins are connected to a heating circuit.
    Type: Grant
    Filed: December 9, 2013
    Date of Patent: December 15, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Chien Ling Hwang
  • Patent number: 10852348
    Abstract: A contact-type testing device that has a heating plate capable of being heated and in which a desired test is conducted while a test object is in contact with the heating plate, the contact-type testing device including: a heating member that heats the heating plate, wherein the heating member includes: a plurality of strips of heat generation bodies; and a power feeding section that feeds electricity to the heat generation bodies, wherein the heat generation bodies are distributed in a planar manner, and a group or all of the heat generation bodies are parallel-connected, wherein a part or all of the heat generation bodies have a steep temperature/resistance characteristic, and resistance values of the heat generation bodies increase with temperature, and wherein the heating member is disposed to face the heating plate, and a gap is provided between the heating plate and the heating member.
    Type: Grant
    Filed: November 7, 2014
    Date of Patent: December 1, 2020
    Assignee: ESPEC CORP.
    Inventor: Hideki Tanaka
  • Patent number: 10831068
    Abstract: A lifting apparatus, ultraviolet irradiation apparatus for alignment, and substrate alignment method. The lifting apparatus comprises: a support plate, provided with multiple lifting rods passing therethrough, each lifting rod being provided with at least one through hole (13) through which a respective lifting rod passes and extends along a vertical direction; an air producing mechanism, in communication with each through hole (13); and a transmission mechanism, disposed at the lower end of the lifting rods.
    Type: Grant
    Filed: March 6, 2018
    Date of Patent: November 10, 2020
    Assignees: HKC CORPORATION LIMITED, CHONGQING HKC OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventor: Chun-Chin Huang
  • Patent number: 10818538
    Abstract: Provided are a wafer holding mechanism for a rotary table and a method and a wafer rotating and holding device, which enable change of a holding position of the wafer during spin processing while maintaining the posture of the wafer, enable reduction of marks of outer peripheral pins due to etching, and enable reduction of insufficient cleaning or uneven cleaning. The wafer holding mechanism for a rotary table comprises a rotary table configured to hold a wafer on an upper surface thereof, and a plurality of movable outer peripheral pins provided in the rotary table and configured to hold an outer periphery of the wafer. The plurality of movable outer peripheral pins comprise a plurality of first movable outer peripheral pins and a plurality of second movable outer peripheral pins configured to hold the wafer at positions different from positions at which the wafer is held by the first movable outer peripheral pins.
    Type: Grant
    Filed: May 18, 2017
    Date of Patent: October 27, 2020
    Assignee: MIMASU SEMICONDUCTOR INDUSTRY CO., LTD.
    Inventors: Ikuo Mashimo, Masaki Tamura, Hideaki Nagai
  • Patent number: 10811271
    Abstract: A substrate processing apparatus includes: a substrate holding member configured to hold a plurality of substrates; a reaction tube configured to accommodate the substrate holding member and process the substrates; a processing gas supply system configured to supply a processing gas into the reaction tube; and an exhaust system configured to exhaust an internal atmosphere of the reaction tube. The reaction tube includes: a cylindrical portion; a gas supply area formed outside one side wall of the cylindrical portion and connected to the processing gas supply system; and a gas exhaust area formed outside the other side wall of the cylindrical portion opposed to the gas supply area and connected to the exhaust system. Each of the gas supply area and the gas exhaust area has an inner wall which partitions the interior of each of the gas supply area and the gas exhaust area into a plurality of spaces.
    Type: Grant
    Filed: September 30, 2014
    Date of Patent: October 20, 2020
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Hidenari Yoshida, Shigeru Odake, Tomoshi Taniyama, Takayuki Nakada
  • Patent number: 10781518
    Abstract: Embodiments of the disclosure include an electrostatic chuck assembly, a processing chamber and a method of maintaining a temperature of a substrate is provided. In one embodiment, an electrostatic chuck assembly is provided that includes an electrostatic chuck, a cooling plate and a gas box. The cooling plate includes a gas channel formed therein. The gas box is operable to control a flow of cooling gas through the gas channel.
    Type: Grant
    Filed: December 11, 2014
    Date of Patent: September 22, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Brian T. West, Manoj A. Gajendra, Soundarrajan Jembulingam
  • Patent number: 10770329
    Abstract: A gas flow is described to reduce condensation with a substrate processing chuck. In one example, a workpiece holder in the chamber having a puck to carry the workpiece for fabrication processes, a top plate thermally coupled to the puck, a cooling plate fastened to and thermally coupled to the top plate, the cooling plate having a cooling channel to carry a heat transfer fluid to transfer heat from the cooling plate, a base plate fastened to the cooling plate opposite the puck, and a dry gas inlet of the base plate to supply a dry gas under pressure to a space between the base plate and the cooling plate to drive ambient air from between the base plate and the cooling plate.
    Type: Grant
    Filed: December 7, 2018
    Date of Patent: September 8, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Hun Sang Kim, Michael D. Willwerth
  • Patent number: 10763141
    Abstract: Embodiments of the disclosure relate to methods for measuring temperature and a tool for calibrating temperature control of a substrate support in a processing chamber without contact with a surface of the substrate support. In one embodiment, a test fixture with a temperature sensor is removably mounted to an upper surface of a chamber body of the processing chamber such that the temperature sensor has a field of view including an area of the substrate support that is adjacent to a resistive coil disposed in the substrate support. One or more calibration temperature measurements of the area of the substrate support are taken by the temperature sensor and simultaneously one or more calibration resistance measurements of the resistive coil are taken corresponding to each calibration temperature measurement. Temperature control of a heating element disposed in the substrate support is calibrated based on the calibration temperature and calibration resistance measurements.
    Type: Grant
    Filed: March 17, 2017
    Date of Patent: September 1, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Niraj Merchant, Lara Hawrylchak, Mehran Behdjat, Dietrich Gage, Christopher Dao, Binh Nguyen, Michael P. Kamp, Mahesh Ramakrishna
  • Patent number: 10755962
    Abstract: A stable and highly reliable device for detecting damage or contact failures of respective parts is provided. The device includes a processing chamber for processing a substrate; a heater for heating the substrate; a substrate support accommodating the heater and installed inside the processing chamber; a shaft for supporting the substrate support; a wire inserted through the shaft; a supporting unit for holding the wire; and a temperature detector connected to the supporting unit.
    Type: Grant
    Filed: March 1, 2016
    Date of Patent: August 25, 2020
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Kazuya Nabeta, Naoki Ukae, Mitsunori Takeshita
  • Patent number: 10734256
    Abstract: A heater system is provided that includes a base functional layer having at least one functional zone. A substrate is secured to the functional member, and a tuning layer is secured to the substrate opposite the base functional layer. The tuning layer includes a plurality of zones that is greater in number than the zones of the base functional layer, and the tuning layer provides lower power than the base functional layer. A component is secured to the tuning layer opposite the substrate, and the substrate defines a thermal conductivity to absorb and dissipate a requisite amount of power from the base functional layer. A control system is also provided that has a plurality of addressable control elements in electrical communication with power lines and with the tuning layer, the control elements providing selective control of the tuning layer zones.
    Type: Grant
    Filed: January 7, 2016
    Date of Patent: August 4, 2020
    Assignee: Watlow Electric Manufacturing Company
    Inventors: Kevin Ptasienski, Kevin Robert Smith, Cal Thomas Swanson, Philip Steven Schmidt, Mohammad Nosrati, Jacob Lindley, Allen Norman Boldt, Sanhong Zhang, Louis P. Steinhauser, Dennis Stanley Grimard
  • Patent number: 10718053
    Abstract: A wafer loading apparatus capable of making a temperature distribution in a surface of a wafer more uniform is provided. The wafer loading apparatus includes a stage on which a wafer is loaded, and a heater installed in the stage to heat a wafer loaded on a loading surface of the stage. The stage includes a top plate providing the loading surface. The heater includes first heater coils disposed on a surface of the top plate opposite to the loading surface, electrode portions electrically connected to the first heater coils and arranged side by side along an outer peripheral portion of the top plate, and a second heater coil disposed outside the first heater coils. The second heater coil generates heat in such a way that a heat distribution in a circumferential direction is varied corresponding to the arrangement of the electrode portions.
    Type: Grant
    Filed: December 19, 2017
    Date of Patent: July 21, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kazuyuki Tomizawa, Masashi Kikuchi, Michio Ishikawa, Naoki Takahashi
  • Patent number: 10714317
    Abstract: A workpiece processing system has a chamber with one or more chamber walls defining surfaces enclosing a chamber volume. One or more chamber wall heaters selectively heat the chamber walls to a chamber wall temperature. A workpiece support within the chamber selectively supports a workpiece having one or more materials having a respective condensation temperature, above which, the one or more materials are respectively in a gaseous state. A heater apparatus selectively heats the workpiece to a predetermined temperature. A controller heats the workpiece to the predetermined temperature by controlling the heater apparatus, heating the one or more materials to respectively form one or more outgassed materials within the chamber volume.
    Type: Grant
    Filed: January 4, 2019
    Date of Patent: July 14, 2020
    Assignee: Axcelis Technologies, Inc.
    Inventor: John F. Baggett
  • Patent number: 10697064
    Abstract: A CVD apparatus includes a process chamber, a susceptor, an auxiliary supporting part, a gas spray part, and a shadow frame. The susceptor may be in the process chamber to support and heat a mother substrate. The auxiliary supporting part may be mounted on the susceptor in a tetragonal frame form to support and heat an edge of the mother substrate supported by the susceptor. The gas spray part may be in the process chamber to face the susceptor and may spray a process gas to the mother substrate. The shadow frame may cover an edge of the auxiliary supporting part and an edge of the susceptor extending from the edge of the auxiliary supporting part.
    Type: Grant
    Filed: September 1, 2015
    Date of Patent: June 30, 2020
    Assignee: LG DISPLAY CO., LTD.
    Inventors: Seung Chul Park, Hee-Yeol Kim
  • Patent number: 10690727
    Abstract: A method for identifying a faulty component in a plasma tool is described. The method includes accessing a measurement of a parameter received from a frequency generator and measurement device. The measurement is generated based on a plurality of radio frequency (RF) signals that are provided to a portion of a plasma tool. The RF signals have one or more ranges of frequencies. The method further includes determining whether the parameter indicates an error, which indicates a fault in the portion of the plasma tool. The method includes identifying limits of the frequencies in which the error occurs and identifying based on the limits of the frequencies in which the error occurs one or more components of the portion of the plasma tool creating the error.
    Type: Grant
    Filed: December 8, 2017
    Date of Patent: June 23, 2020
    Assignee: Lam Research Corporation
    Inventor: Seyed Jafar Jafarian-Tehrani
  • Patent number: 10685864
    Abstract: Susceptor assemblies comprising a susceptor base and a plurality of pie-shaped skins thereon are described. A pie anchor can be positioned in the center of the susceptor base to hold the pie-shaped skins in place during processing.
    Type: Grant
    Filed: June 7, 2017
    Date of Patent: June 16, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Kaushal Gangakhedkar, Kallol Bera, Joseph Yudovsky
  • Patent number: 10679884
    Abstract: A perforated film electrode for a pinned electrostatic chuck that lies below the top surface of the pins in the valleys or interstices between pins, below the elevation of the top surface of the pins, and is attached to the body of the chuck. In one embodiment, the perforated film electrode assembly features a thin film electrode sandwiched between thin sheets of electrically insulating material. The top, outer or exposed surface of the perforated film electrode assembly has a flatness that is maintained within 3 microns. That is, the distance or elevation between the tops of the pins and the top surface of the perforated film unit is maintained within plus or minus 3 microns. A tool for producing a uniform elevation of the top and bottom sheets or layers of electrically insulating material also is taught.
    Type: Grant
    Filed: August 22, 2017
    Date of Patent: June 9, 2020
    Inventors: Edward Gratrix, Prashant Karandikar, David Casale, Michael Aghajanian, Derek Rollins
  • Patent number: 10679869
    Abstract: A placing table on an embodiment includes a supporting member and a base. The supporting member includes a placing region provided with a heater, and an outer peripheral region surrounding the placing region. The base includes a first region supporting the placing region thereon, and a second region surrounding the first region. In the second region, through holes are formed. Wirings electrically connected to the heater passes through the through holes of the second region.
    Type: Grant
    Filed: June 1, 2015
    Date of Patent: June 9, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Dai Kitagawa, Katsuyuki Koizumi, Tsutomu Nagai, Daisuke Hayashi, Satoru Teruuchi
  • Patent number: 10669430
    Abstract: A workpiece support, such as an end effector, is coated on at least one of its surfaces with an anti-reflective material. The anti-reflective material improves the transmission of light through the workpiece support. The workpiece support may be disposed in a chamber, with heating elements disposed beneath the workpiece support, such that the workpiece support is disposed between the heating elements and the workpiece. In certain embodiments, the heating elements may be LEDs or tungsten halogen lamps. The anti-reflective material allows more efficient energy transfer from the heating elements to the workpiece. This may result in improved temperature uniformity across the workpiece. The anti-reflective material may be magnesium fluoride or a multi-layer optical coating. Alternatively, the heating elements may be disposed above the workpiece. In this case, the reduced reflection from the workpiece support may minimize the temperature increase on the portion of the workpiece disposed above the workpiece support.
    Type: Grant
    Filed: July 17, 2018
    Date of Patent: June 2, 2020
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventor: Paul E. Pergande
  • Patent number: 10669632
    Abstract: A processing apparatus includes a processing container, a manifold having an injector supporting part, the injector supporting part being disposed at a lower end of the processing container, extending along an inner wall surface in the processing container and having an insertion hole, and a gas introduction part having a gas flow passage within the gas introduction part to communicate with the insertion hole and an outside of the processing container so that a gas flows in the gas flow passage, an injector inserted and fixed into the insertion hole, the injector entirely extending in a linear manner along the wall surface and having an opening communicating with the gas flow passage at a location where the injector is inserted into the insertion hole, and a gas supplying pipe communicating with and connected to an outer end of the gas flow passage of the gas introduction part.
    Type: Grant
    Filed: November 9, 2016
    Date of Patent: June 2, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Masahiro Kikuchi, Tsuneyuki Okabe
  • Patent number: 10665752
    Abstract: Aspects of the disclosure provide for mechanisms for forming air voids for semiconductor fabrication. In accordance with some embodiments, a method for forming air voids may include forming a first semiconductor layer including a first group III material and a second group III material on a substrate; forming a plurality of air voids in the first semiconductor layer by removing at least a portion of the second group III material from the first semiconductor layer; and forming a second semiconductor layer on the first semiconductor layer. The second semiconductor layer may include an epitaxial layer of a group III-V material. In some embodiments, the first group III material and the second group III material may be gallium and indium, respectively.
    Type: Grant
    Filed: December 15, 2017
    Date of Patent: May 26, 2020
    Assignee: Saphlux, Inc.
    Inventors: Joo Won Choi, Chen Chen, Jie Song
  • Patent number: 10665429
    Abstract: A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume. A showerhead includes a stem portion having one end connected adjacent to an upper surface of the processing chamber. A base portion is connected to an opposite end of the stem portion and extends radially outwardly from the stem portion. The showerhead is configured to introduce at least one of process gas and purge gas into the reaction volume. A plasma generator is configured to selectively generate RF plasma in the reaction volume. An edge tuning system includes a collar and a parasitic plasma reducing element that is located around the stem portion between the collar and an upper surface of the showerhead. The parasitic plasma reducing element is configured to reduce parasitic plasma between the showerhead and the upper surface of the processing chamber.
    Type: Grant
    Filed: September 13, 2017
    Date of Patent: May 26, 2020
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Hu Kang, Adrien LaVoie, Shankar Swaminathan, Jun Qian, Chloe Baldasseroni, Frank Pasquale, Andrew Duvall, Ted Minshall, Jennifer Petraglia, Karl Leeser, David Smith, Sesha Varadarajan, Edward Augustyniak, Douglas Keil
  • Patent number: 10629416
    Abstract: According to various embodiments, a wafer chuck may include at least one support region configured to support a wafer in a receiving area; a central cavity surrounded by the at least one support region configured to support the wafer only along an outer perimeter; and a boundary structure surrounding the receiving area configured to retain the wafer in the receiving area.
    Type: Grant
    Filed: January 23, 2017
    Date of Patent: April 21, 2020
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Rudolf Kogler, Juergen Steinbrenner, Wolfgang Dastel, Harald Huetter, Markus Kahn
  • Patent number: 10626500
    Abstract: Embodiments described herein relate to a showerhead having a reflector plate with a gas injection insert for radially distributing gas. In one embodiment, a showerhead assembly includes a reflector plate and a gas injection insert. The reflector plate includes at least one gas injection port. The gas injection insert is disposed in the reflector plate, and includes a plurality of apertures. The gas injection insert also includes a baffle plate disposed in the gas injection insert, wherein the baffle plate also includes a plurality of apertures. A first plenum is formed between a first portion of the baffle plate and the reflector plate, and a second plenum is formed between a second portion of the baffle plate and the reflector plate. The plurality of apertures of the gas injection insert and the plurality of apertures of the baffle plate are not axially aligned.
    Type: Grant
    Filed: March 4, 2019
    Date of Patent: April 21, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Kartik Shah, Chaitanya A. Prasad, Kevin Joseph Bautista, Jeffrey Tobin, Umesh M. Kelkar, Lara Hawrylchak
  • Patent number: 10604837
    Abstract: A film deposition apparatus includes a process chamber having a substantially cylindrical shape, and a turntable to receive a substrate thereon provided in the process chamber. At least one gas nozzle extends toward a central axis of the turntable from an inner side wall of the process chamber above the turntable along a radial direction of the turntable. At least one side wall heater is provided to cover at least part of the inner side wall of the process chamber and/or at least part of a surrounding area of the central axis of the turntable in a wall-shaped manner.
    Type: Grant
    Filed: February 9, 2016
    Date of Patent: March 31, 2020
    Assignee: Tokyo Electron Limited
    Inventors: Hitoshi Kato, Shigehiro Miura
  • Patent number: 10586717
    Abstract: A semiconductor processing apparatus is provided. The apparatus includes a first chamber portion and a second chamber portion movable relative to the first chamber portion between an open position and a closed position. The first chamber portion includes a recessed area formed on an internal surface of the first chamber portion. The first chamber portion also includes one or more through-holes connected to respective locations of the recessed area. When the second chamber portion is in the closed position and a semiconductor wafer is housed in the micro chamber, the recessed area is sealed by a surface of the semiconductor wafer to form a closed channel. The surface may be processed by a processing fluid flowing in the closed channel. Accordingly, a flowing direction and a flowing speed of the processing fluid may be accurately controlled, and an amount of the processing fluid consumed may be greatly reduced.
    Type: Grant
    Filed: December 21, 2015
    Date of Patent: March 10, 2020
    Assignee: WUXI HUAYING MICROELECTRONICS TECHNOLOGY CO., LTD
    Inventors: Sophia Wen, Zhikai Wang
  • Patent number: 10586727
    Abstract: A suction stage may include a mounting section configured to mount a first substrate, and an evacuation section configured to evacuate air between the first substrate and the mounting section. The mounting section includes a ring-shaped first wall part, and a ring-shaped second wall part inside the first wall part. The evacuation section includes a first control valve between the evacuation section and a first region between the first and second wall parts, a second control valve between the evacuation section and a second region inside the second wall part, and a control section configured to control the valves. The control section is configured to control the valves so that suction and non-suction of the first substrate are alternately performed in at least one of the regions. Thus, suction of the first substrate may be deactivated in one of the regions, while the suction is active in the other region.
    Type: Grant
    Filed: September 24, 2014
    Date of Patent: March 10, 2020
    Assignee: Shibaura Mechatronics Corporation
    Inventors: Emi Matsui, Konosuke Hayashi, Takahiro Kanai
  • Patent number: 10580660
    Abstract: A method and system for the dry removal of a material on a microelectronic workpiece are described. The method includes receiving a workpiece having a surface exposing a target layer to be at least partially removed, placing the workpiece on a workpiece holder in a dry, non-plasma etch chamber, and selectively removing at least a portion of the target layer from the workpiece. The selective removal includes operating the dry, non-plasma etch chamber to perform the following: exposing the surface of the workpiece to a chemical environment at a first setpoint temperature in the range of 35 degrees C. to 100 degrees C. to chemically alter a surface region of the target layer, and then, elevating the temperature of the workpiece to a second setpoint temperature at or above 100 degrees C. to remove the chemically treated surface region of the target layer.
    Type: Grant
    Filed: June 24, 2016
    Date of Patent: March 3, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Subhadeep Kal, Nihar Mohanty, Angelique D. Raley, Aelan Mosden, Scott W. Lefevre
  • Patent number: 10557202
    Abstract: Embodiments of the invention may generally provide a method and apparatus that is used to prepare new and used substrate support assemblies for use in typical semiconductor processing environments. Embodiments of the present invention generally relate to a method of coating a new substrate support assembly or a used substrate support assembly that is being refurbished. The deposited coating may include a surface enhancement and/or protective material that is configured to protect one or more of the components exposed to the processing environment during a semiconductor process. The substrate support assembly may be coated with a protective material and during the coating process, the substrate support assembly is maintained at a temperature that is less than or equal to 150° C. by flowing a coolant through channels formed in a base of the substrate support assembly.
    Type: Grant
    Filed: February 21, 2017
    Date of Patent: February 11, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Wendell Glen Boyd, Jr., Vijay D. Parkhe, Senh Thach
  • Patent number: 10541159
    Abstract: Embodiments disclosed herein relate to a processing chamber having a lens disposed therein. In one embodiment, the processing chamber includes a chamber body, a substrate support assembly, a light source, and a lens. The chamber body defines an interior volume of the processing chamber. The interior volume has a first area and a second area. The substrate support assembly is disposed in the second area. The substrate support assembly is configured to support a substrate. The light source is disposed above the substrate support assembly in the first area. The lens is disposed between the light source and the substrate support assembly. The lens includes a plurality of features formed therein. The plurality of features is configured to preferentially direct light from the light source to an area of interest on the substrate when disposed on the substrate support assembly.
    Type: Grant
    Filed: May 26, 2016
    Date of Patent: January 21, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Orlando Trejo, Ramprakash Sankarakrishnan, Tza-Jing Gung
  • Patent number: 10533896
    Abstract: There is provided a heat treatment apparatus for performing a predetermined film forming process on a substrate by mounting the substrate on a surface of a rotary table installed in a processing vessel and heating the substrate by a heating part while rotating the rotary table. The heat treatment apparatus includes: a first temperature measuring part of a contact-type configured to measure a temperature of the heating part; a second temperature measuring part of a non-contact type configured to measure a temperature of the substrate mounted on the rotary table in a state where the rotary table is being rotated; and a temperature control part configured to control the heating part based on a first measurement value measured by the first temperature measuring part and a second measurement value measured by the second temperature measuring part.
    Type: Grant
    Filed: June 24, 2016
    Date of Patent: January 14, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kazuteru Obara, Koji Yoshii, Yuki Wada, Hitoshi Kikuchi
  • Patent number: 10531521
    Abstract: A heater circuit track pattern designed to be coated on a heater plate in order to achieve high uniform heat distribution and fast heating up, low power consumption and prevent current crowding with high fill factor. The heater plate includes a substrate layer which is an electrically insulative, highly thermally conductive, low heat capacity substrate where the heater circuit track pattern has a conductive layer and a resistive layer. The conductive layer has conductive parts such that power pads, main power lines, electrical transfer pads, sub-conductor lines are formed by a highly conductive material to distribute power equally to the resistive layer. The resistive layer has resistive portions including resistive parts formed by a resistive ink to heat up the heater plate.
    Type: Grant
    Filed: August 27, 2014
    Date of Patent: January 7, 2020
    Assignee: ASELSAN ELEKTRONIK SANAYI VE TICARET ANONIM SIRKETI
    Inventors: Nuri Gokhan Korkusuz, Birce Gulec Boyaci
  • Patent number: 10506720
    Abstract: The present invention discloses a carrying device, a wet etching apparatus and a usage method thereof. The carrying device comprises a carrying body and a heating unit both disposed under a to-be-processed substrate, the carrying body is used for carrying the to-be-processed substrate such that the to-be-processed substrate is placed inclined; the heating unit is used for heating the to-be-processed substrate, such that temperature of the to-be-processed substrate rises gradually from a top portion to a bottom portion thereof. In the technical solution of the present invention, by disposing the heating unit under the to-be-processed substrate, the temperature of the to-be-processed substrate rises gradually from the top portion to the bottom portion thereof, thus etch rate of the etchant on the bottom portion of the to-be-processed substrate can be increased, and uniformity of etch rate in the inclined wet etching process is improved.
    Type: Grant
    Filed: January 21, 2016
    Date of Patent: December 10, 2019
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Zhiyuan Lin, Yinhu Huang
  • Patent number: 10504757
    Abstract: A substrate processing apparatus includes plural heating modules each including a table on which a substrate is placed to be heated, the substrate having plural heated zones. The table has plural heaters each assigned to heat respective ones of the heated zones. Heat generation of the heaters is controlled independently. A control unit controls the heaters such that integrated quantities of heat of the respective heated zones given by the corresponding heaters from first to second time point are substantially identical to each other in each of the heating modules, and are substantially identical to each other among the heating modules. The first time point is set when a temperature transition profile of the substrate is rising toward a process temperature after placing the substrate on the table under a condition where heat generation of the heaters is stable. The second time point is set after the temperature transition profile reaches the process temperature.
    Type: Grant
    Filed: December 14, 2016
    Date of Patent: December 10, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Kenichi Shigetomi, Takeshi Saikusa, Eiichi Sekimoto, Takayuki Fukudome, Kousuke Yoshihara, Suguru Enokida, Kazuhiro Takeshita, Kazuto Umeki