Abstract: System and methods for processing a substrate using a reactor with multiple heating zones and control of said heating zones using a common terminal shared between two power supplies are provided. The reactor includes a heater assembly for supporting the substrate and a showerhead for supplying process gases into the reactor. An inner heater and an outer heater are integrated in the heater assembly. An inner power supply has a positive terminal connected to a first end of the inner heater and a negative terminal is connected to a second end of the inner heater that is coupled to a common terminal. An outer power supply has a positive terminal connected to a first end of the outer heater and a negative terminal connected to a second end of the outer heater that is coupled to the common terminal. A common-terminal heater module is configured to receive a measured temperature that is proximate to the inner heater.

Abstract: RF susceptors manufactured by means of 3D printing. 3D-printed susceptors in accordance with the invention include susceptors having solid or mesh walls, where the susceptors are in the form of hollow cylinders, pyramids, spheres, hemispheres, ellipsoids, paraboloids, toroids, or prisms; flat planes; or other hollow or solid three-dimensional shapes. The 3D-printed susceptors can be formed from any suitable starting material, such as tungsten powder, graphite, silicon carbide, molybdenum powder, tantalum powder, rhenium powder, or alloys thereof, or can be formed such that some portions of the susceptors are formed from one or more materials while other portions are formed from different material(s).

Abstract: In one form, the present disclosure is directed toward a method of controlling temperature of a heater including a resistive heating element. The method includes applying power to the resistive heating element at a variable ramp rate to decrease temperature of the heater to a desired temperature setpoint, where the variable ramp rate is set to a desired ramp rate. The method further includes monitoring the temperature of the heater to detect a runaway condition and adjusting the variable ramp rate from the desired ramp rate to a permitted ramp rate in response to the runaway condition being detected.

Abstract: Provided in an active gas generation apparatus according to the present disclosure is a gas separation structure of separating a gas flow between an in-housing space and a discharge space by a cooling plate, an electrode holding member, and a high voltage apply electrode part. The active gas generation apparatus further includes an auxiliary metal electrode provided on an upper surface of an electrode dielectric film in the high voltage apply electrode part. The auxiliary metal electrode is provided to overlap with part of an active gas transmission path in a plan view, and set to ground potential.

Abstract: A substrate processing apparatus includes: a rotary table provided inside a processing container; a stage provided on an upper surface of the rotary table in order to mount a substrate thereon, and configured to revolve by a rotation of the rotary table; a heater configured to heat the substrate mounted on the stage; and a rotation shaft provided at a location that rotates together with the rotary table to freely rotate while supporting the stage, and including a low heat conductivity body formed of a material with a heat conductivity lower than that of the stage.

Abstract: A semiconductor-manufacturing apparatus member includes an upper plate that has a wafer placement surface having a concave shape or a convex shape, that contains an electrostatic electrode, and that is composed of ceramics; an intermediate plate that is joined to a surface of the upper plate opposite the wafer placement surface with a first metal joining layer interposed therebetween; and a lower plate that is joined to a surface of the intermediate plate opposite the surface that is joined to the upper plate with a second metal joining layer interposed therebetween, wherein a thermal expansion coefficient of the intermediate plate is larger than thermal expansion coefficients of the upper plate and the lower plate.

Abstract: A substrate holder includes a first boat configured to hold a substrate in a shelf-like manner, and a second boat coaxial with the first boat and provided to move up and down relative to the first boat. The second boat holds a substrate in a shelf-like manner. The first boat includes a first bottom plate and a first ceiling plate provided to face each other, a first support column connecting the first bottom plate and the first ceiling plate to each other, and a first placement surface on which the substrate is placed. The second boat includes a second bottom plate and a second ceiling plate provided to vertically face each other, a second support column connecting the second bottom plate and the second ceiling plate, and a second placement surface on which the substrate is placed. The second ceiling plate overlaps the first ceiling plate in a plan view.

Abstract: A substrate support includes a body and a thermal void. The body is configured to support a substrate during processing of the substrate. The body includes plates including a top plate, a first intermediate plate, a second intermediate plate and a bottom plate. The plates are arranged to form a stack. The first intermediate plate is disposed on the second intermediate plate. The thermal void is defined by an upper surface of the second intermediate plate and at least one of a lower surface of the first intermediate plate or a lower surface of the top plate. The thermal void is annular-shaped.

Abstract: A substrate processing apparatus having a tube, a closed liner lining the interior surface of the tube, a plurality of gas injectors to provide a gas to an inner space of the liner, and, a gas exhaust duct to remove gas from the inner space is disclosed. The liner may have a substantially cylindrical wall delimited by a liner opening at a lower end and being substantially closed for gases above the liner opening. The apparatus may have a boat constructed and arranged moveable into the inner space via the liner opening and provided with a plurality of substrate holders for holding a plurality of substrates over a substrate support length in the inner space. Each of the gas injectors may have a single exit opening at the top and the exit openings of the plurality of injectors are substantially equally divided over the substrate support length.

Abstract: The present disclosure provides a heater and a heating base. The heater is used in a semiconductor process apparatus and includes a heating body and a base configured to support the heating body. The base includes a base body and a plate connected to each other. The base body is opposite to the heating body and arranged at an interval. The plate is arranged between the base body and the heating body and is fixedly connected to the heating body. An elastic bending structure is arranged on at least one of the plate, the base body, or the connection place between the plate and the base body. The elastic bending structure is configured to cause the plate and the heating body to remain connected by generating elastic deformation when the plate and the base body expand and deform.

Abstract: A vacuum chamber and an arrangement for atomic layer deposition. The vacuum chamber includes a loading wall provided with a loading opening, a back wall opposite the loading wall, and a first direction extending in a direction between the loading wall and the back wall. The vacuum chamber further includes a first vacuum chamber support rail inside the vacuum chamber and extending in the first direction, and a second vacuum chamber support rail inside the vacuum chamber and extending in the first direction and arranged spaced apart from the first vacuum chamber support rail. The first vacuum chamber support rail is arranged independently movable in vertical direction, and the second vacuum chamber support rail is arranged independently movable in vertical direction.

Abstract: A semiconductor structure, a method for manufacturing a FinFET structure and a method for manufacturing a semiconductor structure are provided. The method for forming a FinFET structure includes: providing a FinFET precursor including a plurality of fins and a plurality of gate trenches between the fins; forming a first portion of the trench dummy of a dummy gate within the plurality of gate trenches; removing at least a part of the first portion of the trench dummy; forming a second portion of the trench dummy over the first portion of the trench dummy; performing a first thermal treatment to the first and second portions of the trench dummy; and forming a blanket dummy of the dummy gate over the second portion of the trench dummy. The present disclosure further provides a FinFET structure with an improved metal gate.

Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

Abstract: A vacuum process module has a pre-shaped ceiling and/or bottom that is shaped to bulge outwards. The shape of the ceiling and/or process modules counteracts deformation caused by vacuum pressures and/or high temperatures when processing substrates in the process module. The process module may have a side openable to a transfer chamber and an opposite side opposite the openable side. The bulge may be asymmetric, with the peak of the bulge off-center on the ceiling and closer to the opposite side than to the openable side. A rigid structure may be mounted on the ceiling to adjust the magnitude of the bulge in the ceiling. The beam may be, e.g., a rigid beam having an adjustable lift mechanism for lifting up an attached part of the ceiling. The process module may accommodate a plurality of substrates for processing, with each substrate occupying a dedicated stage in the process module.

Abstract: A susceptor arrangement for use in a CVD reactor includes a circular or annular susceptor with a first susceptor broad side, on which a substrate holder and at least one covering element are arranged. At least one of the covering elements consists of multiple covering plates, in which a lowermost covering plate is adjacent to the first broad side face of the susceptor, and an uppermost covering plate covers the lowermost covering plate at least in certain regions and forms a free broad side face of the susceptor arrangement. The covering plates are preferably produced from silicon carbide, and are connected to one another by positioning elements.

Abstract: This application provides a protection mechanism and a method for protecting a wafer and a pin. The protection mechanism includes: a drive; a linear unit, connected to the drive, so as to cause a pin to eject a wafer under the action of the drive; a torsion meter, configured to measure a torque of the protection mechanism in a process of ejecting the wafer by the pin; and a control module, configured to receive the torque measured by the torsion meter, and compare the torque with a predetermined value. The torsion meter is disposed between the drive and the linear unit. The to protection mechanism can effectively measure, in real time, a torque generated in a process of ejecting the wafer, and can determine, according to the torque, whether an abnormality occurs in the ejection process, so that an accident such as wafer fragmentation or pin fracturing can be effectively prevented.

Abstract: The substrate treating apparatus includes a processing module and an index module on which a cassette having the substrate received therein is placed and that includes an index robot that transfers the substrate between the cassette and the processing module. The processing module includes a process chamber and a transfer chamber. The process chamber includes a support unit. The support unit includes a support on which the substrate is placed and a ring member that surrounds the substrate placed on the support and that is provided so as to be detachable from the support. The apparatus further includes a carrier storage unit that stores a carrier that is mounted on a hand of the main transfer robot or the index robot and on which the ring member is placed when the ring member is transferred by the main transfer robot or the index robot.

Abstract: A processing apparatus includes: a processing container; a first injector extending in a longitudinal direction along an inner wall of the processing container, wherein the first injector includes a first introduction port formed at a lower end and first gas holes formed in the extending portion; and a second injector extending upward along the inner wall of the processing container, folded back at an upper portion, and then extending downward, wherein the second injector includes a second introduction port formed at a lower end of an upward extending portion and second gas holes formed in a downward extending portion. The first injector includes a first throttle portion having a cross-sectional area decreasing as a distance from the first introduction port increases. The second injector includes a second throttle portion formed in the downward extending portion and having a cross-sectional area decreasing as a distance from the second introduction port increases.

Abstract: With respect to a cleaning method of cleaning an inside of a processing chamber in a film deposition apparatus including a rotary table rotatably provided in the processing chamber, multiple mounting areas being provided on the rotary table in a circumferential direction, the cleaning method includes (a) discharging a carrier gas and a cleaning gas with rotating the rotary table, a flow rate of the carrier gas being adjusted to a first flow rate, (b) discharging the carrier gas and the cleaning gas with rotating the rotary table, the flow rate of the carrier gas being adjusted to a second flow rate less than the first flow rate, and (c) performing switching from (a) to (b) and switching from (b) to (a) a predetermined number of times while the rotary table rotates by one revolution, the predetermined number being equal to a number of the multiple mounting areas.

Abstract: Various embodiments herein relate to carriers for supporting one or more substrate as the substrates are passed through a processing apparatus. In many cases, the substrates are oriented in a vertical manner. The carrier may include a frame and vertical support bars that secure the glass to the frame. The carrier may lack horizontal support bars. The carrier may allow for thermal expansion and contraction of the substrates, without any need to provide precise gaps between adjacent pairs of substrates. The carriers described herein substantially reduce the risk of breaking the processing apparatus and substrates, thereby achieving a more efficient process. Certain embodiments herein relate to methods of loading substrates onto a carrier.

Abstract: The present invention relates to an electrode slurry coating device and method, wherein the heights of first and second slot die heads for discharging active material can be controlled according to time to improve process efficiency and reduce defect rates when forming an active material layer having a double layer structure.

Abstract: A gas supply unit is disclosed. An exemplary gas supply unit includes an upper plate provided with a plurality of injection holes; and a divider plate constructed and arranged against the upper plate to guide a flow of gas from the injection holes; wherein one of the plurality of injection holes is a center injection hole and the other than said one of the plurality of injection holes are arranged concentrically around the center injection hole as outer injection holes; and wherein the divider plate is provided with a center through hole fluidly communicating with the center injection hole and is provided with a plurality of protrusions extending towards the upper plate thereby creating a plurality of zones, each of the zones fluidly communicating with one of the outer injection holes.

Abstract: A method and apparatus for a process chamber for thermal processing is described herein. The process chamber is a dual process chamber and shares a chamber body. The chamber body includes a first and a second set of gas inject passages. The chamber body may also include a first and a second set of exhaust ports. The process chamber may have a shared gas panel and/or a shared exhaust conduit.

Abstract: The present disclosure is directed toward a method that includes acquiring, by an imaging device, a thermal image of a heating surface of a heater assembly. The heater assembly includes a heating surface for heating a heating target, and the heating surface defines a plurality of heating zones. The further includes determining variations in the plurality of heating zones based on the thermal image of the heating surface. The thermal image includes a plurality of pixels corresponding to the plurality of heating zones in the heater assembly.

Abstract: A gas introduction apparatus according to an embodiment of the present disclosure includes a gas feeding block disposed above a chamber, the gas feeding block comprising a plurality of gas channels disposed therein to supply a gas to the chamber, a valve assembly coupled to one side surface of the gas feeding block, the valve assembly comprising a plurality of valves for selectively opening/closing at least one of the plurality of gas channels, and a gas introduction pipe coupled, at one end thereof, to the valve assembly while communicating with the chamber at the other end thereof. A buffer space is provided at least one of the plurality of gas channels such that the buffer space is disposed adjacent to the gas introduction pipe, to accumulate the gas.

Abstract: A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.

Abstract: Process chambers and methods for leveling a motor shaft and substrate support plane are described. The process chamber includes a motor shaft connected to the process chamber with a plurality of motor bolts. A first plurality of sensors is arranged at about the same radial distance from the rotational axis and at different angular positions relative to the rotational axis and a second plurality of sensors are arranged to measure the support plane. An angle-dependent motor leveling profile is determined and shim values for the motor bolts are determined to level the motor shaft. The support plane is measured using the second plurality of sensors to level the support plane perpendicular to the motor shaft.

Abstract: An atomic layer deposition apparatus for coating on fine powders is disclosed, which includes a vacuum chamber, a shaft sealing device, and a driving unit. The shaft sealing device includes an outer tube and an inner tube arranged in an accommodating space of the outer tube. The driving unit drives the vacuum chamber to rotate through the outer tube to agitate the fine powders in a reaction space of the vacuum chamber. An air extraction line and an air intake line are arranged in a connection space of the inner tube. The air extraction line is used to extract gas from the reaction space. The air intake line is used to transport non-reactive gas to the reaction space to blow the fine powders around in the reaction space and precursor gas to the reaction space to form thin films with uniform thickness on the surface of the fine powders.

Abstract: An apparatus capable of heating a liquid may provide a valve assembly configured to receive an incoming liquid from a bulk source. The valve assembly may control the flow of the liquid to a source vessel via a pipe system. The pipe system includes a first pipe directly connected to the valve assembly and a second pipe downstream from the first pipe and connected between the first pipe and the source valve. The second pipe is heated with a heating system that surrounds the second pipe, and the second pipe has a larger diameter than that of the first pipe.

Abstract: An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C.

Abstract: A support unit for supporting a substrate includes a heating member and a reflector, and the reflector includes a curved surface that reflects thermal energy generated by the heating member toward an edge region of the substrate.

Abstract: According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) heating a substrate to a first temperature while supporting the substrate on a substrate support, and supplying a process gas into a process vessel accommodating the substrate support; (b) lowering a temperature of a low temperature structure provided in the process vessel to a second temperature lower than the first temperature by supplying an inert gas or air to a coolant flow path provided in the process vessel after (a) for a predetermined time, wherein defects occur when a cleaning gas is supplied to the low temperature structure at the first temperature; and (c) cleaning the low temperature structure by supplying the cleaning gas into the process vessel after (b).

Abstract: In various aspects, a preheater, a directed flow chemical vapor infiltration/chemical vapor deposition (CVI/CVD) furnace, and/or an installation jig are described. In one example, a preheater includes a central inlet; a circuitous gas flow path downstream of the central inlet; a plenum section downstream of the circuitous gas flow path; and an outlet diffuser plate defining a plurality of apertures fluidly configured to couple the preheater to a furnace working zone, wherein the outlet diffuser plate is downstream of the plenum section, wherein the circuitous gas flow path is fluidly coupled to the plenum section by an outer circumferential slot opening.

Abstract: A substrate processing apparatus capable of minimizing the effect of a filling gas in a lower space on the processing of a substrate includes: a substrate supporting unit; at least one ring surrounding the substrate supporting unit; a processing unit on the substrate supporting unit; and an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit, wherein a first gas in the reaction space is transmitted to the exhaust unit through a first channel, a second gas in a lower space below the substrate supporting unit is transmitted to the exhaust unit through a second channel, and the first channel and the second channel are separated by the at least one ring.

Abstract: Exemplary support assemblies may include a top puck and a backing plate coupled with the top puck. The support assemblies may include a cooling plate coupled with the backing plate. The support assemblies may include a heater coupled between the cooling plate and the backing plate. The support assemblies may also include a back plate coupled with the backing plate about an exterior of the backing plate. The back plate may at least partially define a volume, and the heater and the cooling plate may be housed within the volume.

Abstract: Techniques herein include a process chamber for depositing thin films to backside surfaces of wafers to reduce wafer bowing and distortion. A substrate support provides an annular perimeter seal around the bottom and/or side of the wafer which allows the majority of the substrate backside to be exposed to a process environment. A supported wafer separates the chamber into lower and upper chambers that provide different process environments. The lower section of the processing chamber includes deposition hardware configured to apply and remove thin films. The upper section can remain a chemically inert environment, protecting the existing features on the top surface of the wafer. Multiple exhausts and differential pressures are used to prevent deposition gasses from accessing the working surface of a wafer.

Abstract: A through via structure includes a through via and a capping pattern. The through via includes a metal pattern extending in a vertical direction, and a barrier pattern on a sidewall and a lower surface of the metal pattern. The capping pattern contacts an upper surface of the through via. A lowermost surface of an edge portion of the capping pattern is not higher than a lowermost surface of a central portion of the capping pattern.

Abstract: The invention relates to an injector configured for arrangement within a reaction chamber of a substrate processing apparatus to inject gas in the reaction chamber. The injector may be elongated along a first axis and configured with an internal gas conduction channel extending along the first axis and provided with at least one gas entrance opening and at least one gas exit opening. The injector may have a width extending along a second axis perpendicular to the first axis substantially larger than a depth of the injector extending along a third axis perpendicular to the first and second axis. The wall of the injector may have a varying thickness.

Abstract: A film-forming device which includes a chamber having a horizontal central axis, capable of maintaining a vacuum, and movable along the horizontal central axis, the chamber including an inner chamber and an outer chamber that houses the inner chamber; a workpiece holder that aligns and holds workpieces to be processed in multiple stages in the inner chamber; and a heater that heats an inside of the chamber.

Abstract: Provided herein is a tobacco packaging material, comprising a paper material coated with at least one polymer layer. The polymer layer comprises at least one repulpable polymer, and wherein the tobacco packaging material has a water vapor transmission rate (WVTR) that is at least 90% lower than the paper material. Further provided is a tobacco package comprising the tobacco packaging material, wherein the tobacco package is substantially free of any foil inner liner or polypropylene film. Further described is a method for making the tobacco packaging material, comprising extrusion coating at least one repulpable polymer onto a paper material to form a polymer layer, and optionally further depositing at least one atomic layer deposition (ALD) layer that comprises a metal oxide.

Abstract: A method for treating a carbon or ceramic yarn includes forming a coating on the yarn in a reaction zone of a reactor by heating a segment of the yarn in the presence of a gas phase in a microwave field, wherein the gas phase includes a mixture of a diluent gas and a coating precursor in the vapor state, and wherein the gas phase is formed at least by introducing the diluent gas into the reactor and mixing the introduced diluent gas with the coating precursor in the reactor before the reaction zone.

Abstract: Described herein is a technique capable of adjusting an inner pressure of a process chamber into a high vacuum state in a short time. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber; a main exhaust line including a first pipe, a first opening degree adjusting valve, an opening/closing valve and a pressure sensor; a bypass exhaust line including a second pipe and a second opening degree adjusting valve; and a controller configured to adjust an inner pressure of the process chamber by: (a) adjusting an opening degree of the second opening degree adjusting valve; (b) closing the second opening degree adjusting valve and opening the opening/closing valve and the first opening degree adjusting valve; and (c) closing the opening/closing valve and the first opening degree adjusting valve and adjusting the opening degree of the second opening degree adjusting valve.

Abstract: There is provided an injector that extends in a longitudinal direction, including: a gas introduction part having a circular or a regular polygonal shape in a cross section perpendicular to the longitudinal direction and having no discharge holes; and a gas supply part having a protruded portion in one direction in the cross section perpendicular to the longitudinal direction, and having a plurality of discharge holes formed in a leading end of the protruded portion along the longitudinal direction, wherein a first end of the gas supply part in the longitudinal direction is connected to the gas introduction portion.

Abstract: A photoresist apparatus and a method are provided. The photoresist apparatus includes a pre-baking apparatus. The pre-baking apparatus includes: a hot-plate, a first cover over the hot-plate, a second cover over the first cover, a first heating element extending along a topmost surface of the first cover, and a second heating element extending along a topmost surface of the second cover.

Abstract: A wafer chuck includes a base made of a ceramic containing silicon carbide. The base has an oxidation-treated layer, and a film made of diamond-like carbon (DLC) is formed on an outermost surface of the base.

Abstract: A substrate processing apparatus including a process chamber; a susceptor in the process chamber; and an inner edge ring and an outer edge ring on the susceptor, wherein the inner edge ring includes a semiconductor, the outer edge ring includes an insulator, an upper surface of the outer edge ring is at a higher level than an upper surface of the inner edge ring, and the outer edge ring has an overhang extending onto the inner edge ring.

Abstract: A CVD apparatus for manufacturing a III-nitride-based layer having a rotating wafer carrier positioned inside a reaction chamber that receives a mixture of a nitrogen gas source and a group III element gas source. Recesses are formed within the wafer carrier, each including a satellite disc of thickness x for accepting a wafer of thickness t. The satellite disc includes a peripheral notch of height a, and a notch thickness of x?a=b. A peripheral retaining ring includes a vertical rise portion extending a distance of e+f and a laterally-extending portion, the laterally-extending portion engaging the satellite disc notch. A gap c is formed between the substrate and a surface of the satellite disc. The relationship of a+b+c+t=b+e+f is satisfied such that laminar flow occurs in the region of the retaining ring.

Abstract: A method and a vacuum-coating system (10) for coating a strip-shaped material (11), in particular made of metal, are disclosed. Thereby, the strip-shaped material (11) is moved over a conveying section (12) in a transport direction (T) and vacuum-coated within a coating chamber (14) in which a vacuum is applied. When viewed in the transport direction (T) of the strip-shaped material (11), at least one trimming shear (38) is arranged upstream of the coating chamber (14), with which the strip-shaped material (11) is trimmed at at least one strip edge, preferably at both strip edges, in order to produce a constant width for the strip-shaped material (11) over its longitudinal extension.

Abstract: Susceptor assemblies comprising a susceptor base and a plurality of pie-shaped skins thereon are described. A pie anchor can be positioned in the center of the susceptor base to hold the pie-shaped skins in place during processing.

Abstract: Embodiments described herein generally relate to apparatus for fabricating semiconductor devices. A gas injection apparatus is coupled to a first gas source and a second gas source. Gases from the first gas source and second gas source may remain separated until the gases enter a process volume in a process chamber. A coolant is flowed through a channel in the gas injection apparatus to cool the first gas and the second gas in the gas injection apparatus. The coolant functions to prevent thermal decomposition of the gases by mitigating the influence of thermal radiation from the process chamber. In one embodiment, the channel surrounds a first conduit with the first gas and a second conduit with the second gas.