Substrate Heater Patents (Class 118/725)
  • Patent number: 11560628
    Abstract: A substrate processing method includes supplying processing gas from a plurality of gas holes formed along a longitudinal direction of an injector, which extends in a vertical direction along an inner wall surface of a processing container and is rotatable around a rotational axis extending in the vertical direction, to perform a predetermined process on a substrate accommodated in the processing container. The predetermined process includes a plurality of operations, and a supply direction of the processing gas is changed by rotating the injector in accordance with the operations.
    Type: Grant
    Filed: September 20, 2018
    Date of Patent: January 24, 2023
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Kohei Fukushima
  • Patent number: 11557501
    Abstract: Susceptor assemblies comprising a susceptor base and a plurality of pie-shaped skins thereon are described. A pie anchor can be positioned in the center of the susceptor base to hold the pie-shaped skins in place during processing.
    Type: Grant
    Filed: June 15, 2020
    Date of Patent: January 17, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Kaushal Gangakhedkar, Kallol Bera, Joseph Yudovsky
  • Patent number: 11545375
    Abstract: A system and method of heating a workpiece to a desired temperature is disclosed. This system and method consider the physical limitations of the temperature device, such as time lag, temperature offset, and calibration, in creating a hybrid approach that heats the workpiece more efficiently. First, the workpiece is heated using open loop control to heat the workpiece to a threshold temperature. After the threshold temperature is reach, a closed loop maintenance mode is utilized. In certain embodiments, an open loop maintenance mode is employed between the open loop warmup mode and the closed loop maintenance mode. Additionally, a method of calibrating a pyrometer using a contact thermocouple is also disclosed.
    Type: Grant
    Filed: June 17, 2019
    Date of Patent: January 3, 2023
    Assignee: Applied Materials, Inc.
    Inventors: James D. Strassner, Bradley M. Pomerleau, D. Jeffrey Lischer, Dawei Sun, Michael Paul Rohrer
  • Patent number: 11527429
    Abstract: An electrostatic chuck includes a ceramic body and adapter objects. The adapter objects collectively form a plurality of openings distributed over a bottom surface of the ceramic body at different distances from a center of a circle defined by the bottom surface of the ceramic body.
    Type: Grant
    Filed: February 25, 2019
    Date of Patent: December 13, 2022
    Assignee: Applied Materials, Inc.
    Inventor: Vijay D. Parkhe
  • Patent number: 11517942
    Abstract: The present invention provides a method for cleaning a component for use in an ultra-high vacuum. The method may comprise the steps of placing the component to be cleaned in a vacuum furnace chamber; plasma cleaning the component at a temperature of greater than about 80° C.; and evacuating the chamber to a pressure of less than about 10E-5 mbar. Apparatus for performing such methods and kits comprising said components are also provided.
    Type: Grant
    Filed: February 12, 2018
    Date of Patent: December 6, 2022
    Assignee: Edwards, S.R.O.
    Inventors: Martin Zahradka, Miroslav Strasil
  • Patent number: 11521884
    Abstract: The present disclosure describes an apparatus. The apparatus includes a chuck for placing an object thereon, a gas passage extending along a periphery of an outer sidewall of the chuck and separating the chuck into an inner portion and a sidewall portion, and a plurality of gas holes through the sidewall portion and configured to connect a gas external to the chuck to the gas passage.
    Type: Grant
    Filed: June 19, 2019
    Date of Patent: December 6, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ian Hsieh, Che-fu Chen, Yan-Hong Liu
  • Patent number: 11515195
    Abstract: Exemplary semiconductor processing chambers may include a chamber body. The chambers may include a showerhead. The chambers may include a substrate support. The substrate support may include a platen characterized by a first surface facing the showerhead. The substrate support may include a shaft coupled with the platen along a second surface of the platen opposite the first surface of the platen. The shaft may extend at least partially through the chamber body. A coating may extend conformally about the first surface of the platen, the second surface of the platen, and about the shaft.
    Type: Grant
    Filed: October 26, 2020
    Date of Patent: November 29, 2022
    Assignee: Applied Materials, Inc.
    Inventor: Laksheswar Kalita
  • Patent number: 11499229
    Abstract: Embodiments of the present disclosure generally relate to substrate support assemblies used in semiconductor device manufacturing. In one embodiment, a substrate support includes a ceramic body having at least one aperture formed therein defined by a sidewall. A plurality of recesses extend into the sidewall, a rod member is disposed in the at least one aperture, and an eyelet member is circumferentially disposed about the rod member. The eyelet member has a plurality of protrusions extending outwardly therefrom, each disposed in a corresponding recess of the plurality of recesses. A first portion of each protrusion is in contact with a sidewall of the respective recess of the ceramic body and a second portion of each protrusion is separated by a gap from the sidewall of the respective recess of the ceramic body. A first portion of a brazing material is disposed between an upper surface of the at least one aperture and an end of the rod member.
    Type: Grant
    Filed: November 27, 2019
    Date of Patent: November 15, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Chidambara A. Ramalingam, Juan Carlos Rocha, Joseph M. Polese, Katty Marie Lydia Gamon Guyomard, Jian Li
  • Patent number: 11492705
    Abstract: Aspects of the present disclosure relate generally to isolator devices, components thereof, and methods associated therewith for substrate processing chambers. In one implementation, a substrate processing chamber includes an isolator ring disposed between a pedestal and a pumping liner. The isolator ring includes a first surface that faces the pedestal, the first surface being disposed at a gap from an outer circumferential surface of the pedestal. The isolator ring also includes a second surface that faces the pumping liner and a protrusion that protrudes from the first surface of the isolator ring and towards the outer circumferential surface of the pedestal. The protrusion defines a necked portion of the gap between the pedestal and the isolator ring.
    Type: Grant
    Filed: June 9, 2020
    Date of Patent: November 8, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Nitin Pathak, Amit Kumar Bansal, Tuan Anh Nguyen, Thomas Rubio, Badri N. Ramamurthi, Juan Carlos Rocha-Alvarez
  • Patent number: 11486035
    Abstract: A graphene synthesis chamber includes: a chamber case in which a substrate including a metal thin film is placed; a gas supply unit which supplies at least one gas comprising a carbon gas into an inner space of the chamber case; a main heating unit which emits at least one light to the inner space to heat the substrate; and at least one auxiliary heating unit which absorbs the at least one light and emits radiant heat toward the substrate.
    Type: Grant
    Filed: August 14, 2019
    Date of Patent: November 1, 2022
    Assignee: Versarien PLC
    Inventors: Dong-kwan Won, Won-Sik Nam
  • Patent number: 11469135
    Abstract: An embodiment of a substrate placing part relates to a substrate placing part that is arranged in a substrate processing apparatus. The substrate placing part is divided into a plurality of inner sections that have an inner heating wire and an outer heating wire; and an outer section that is arranged in an edge thereof, that surrounds the inner sections, and that includes the outer heating wire, wherein the inner heating wire is disposed in the same inner section and has a first gap in at least a partial section thereof, the respective inner heating wires disposed in the different inner sections are disposed to have a second gap in a part in which the inner heating wires are parallel to one another, the inner heating wire and the outer heating wire are disposed to have a third gap in a part in which the inner heating wire and the outer heating wire are parallel to one another, and the first gap may be smaller than the second gap.
    Type: Grant
    Filed: October 11, 2017
    Date of Patent: October 11, 2022
    Inventors: Ho Chul Kang, Chul Joo Hwang
  • Patent number: 11459652
    Abstract: Embodiments herein include void-free material depositions on a substrate (e.g., in a void-free trench-filled (VFTF) component). In some embodiments, a method may include providing a plurality of device structures extending from a base, each of the plurality of device structures including a first sidewall opposite a second sidewall and a top surface extending between the first and second sidewalls, and providing a seed layer over the plurality of device structures. The method may further include forming a dielectric layer along just the top surface and along an upper portion of the first and second sidewalls using an angled deposition delivered to the plurality of device structures at a non-zero angle of inclination relative to a perpendicular extending from an upper surface of the base, and forming a fill material within one or more trenches defined by the plurality of device structures.
    Type: Grant
    Filed: October 16, 2020
    Date of Patent: October 4, 2022
    Assignee: Applied Materials, Inc.
    Inventors: M. Arif Zeeshan, Tristan Y. Ma, Kelvin Chan
  • Patent number: 11456199
    Abstract: In a measurement method, a terminal is brought into contact with an electrode in an electrostatic chuck in contact with a substrate that is grounded. Further, the terminal, the electrostatic chuck and the substrate are fixed, and a current value and a voltage value are measured using an ammeter and a voltmeter, respectively, that are connected to the terminal. In addition, whether or not the terminal and the electrode are electrically connected is determined from a slope of the current value and/or a peak current value based on the measured current value and the voltage value.
    Type: Grant
    Filed: December 27, 2019
    Date of Patent: September 27, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Ryusei Kashimura, Masanori Sato, Tetsu Tsunamoto
  • Patent number: 11437253
    Abstract: The invention provides a wafer heating pedestal including a shaft connected to a bottom of a plate. The shaft holds a contact array being in contact with plural contact pads of the plate. The contact array includes plural contact columns.
    Type: Grant
    Filed: May 29, 2020
    Date of Patent: September 6, 2022
    Assignee: PIOTECH CO., LTD.
    Inventors: Junichi Arami, Ren Zhou
  • Patent number: 11401608
    Abstract: An atomic layer deposition equipment and an atomic layer deposition process method are disclosed. The atomic layer deposition equipment includes a chamber, a substrate stage, at least one bottom pumping port, at least one hollow component, a baffle and a shower head assembly, wherein the hollow component has an exhaust hole. The baffle is below the hollow component and forms an upper exhaust path with the hollow component, so that the flow field of the precursor in the atomic layer deposition process can be adjusted to a slow flow field to make a uniform deposition on the substrate.
    Type: Grant
    Filed: October 20, 2020
    Date of Patent: August 2, 2022
    Assignee: SKY TECH INC.
    Inventors: Jing-Cheng Lin, Ching-Liang Yi, Yun-Chi Hsu, Hsin-Yu Yao
  • Patent number: 11396714
    Abstract: To stably convey a substrate (workpiece) while suppressing the workpiece from bending. A treatment device is provided. This treatment device includes: a conveying part that conveys a workpiece in a state where a flat surface of the workpiece is inclined around a conveying directional axis relative to a horizontal plane; and a treatment part in which at least one of polishing and cleaning is performed on the flat surface of the workpiece, wherein the conveying part has a drive part configured to be brought into physical contact with an end part of the workpiece and apply force in a conveying direction to the workpiece, a first Bernoulli chuck arranged to face the flat surface of the workpiece, and a second Bernoulli chuck arranged to face an end face of an opposite end part to the end part of the workpiece.
    Type: Grant
    Filed: September 12, 2017
    Date of Patent: July 26, 2022
    Assignee: EBARA CORPORATION
    Inventors: Kenya Ito, Hirohiko Ueda
  • Patent number: 11396702
    Abstract: A substrate processing apparatus having an improved film processing uniformity is provided. The substrate processing apparatus includes a partition configured to provide a gas supply channel and a gas supply unit connected to the gas supply channel. A gas flow channel communicating with the gas supply channel is formed in the gas supply unit. A first through-hole is formed to penetrate through at least a part of the partition. A second through-hole is formed to penetrate through at least a part of the gas supply unit. The first through-hole communicates with the gas flow channel via the second through-hole. The second through-hole is arranged between a center and an edge of the gas flow channel, and is arranged spaced apart from the edge.
    Type: Grant
    Filed: January 9, 2021
    Date of Patent: July 26, 2022
    Assignee: ASM IP Holding B.V.
    Inventors: Young Hoon Kim, Yong Gyu Han, Dae Youn Kim, Hyun Soo Jang, Jeong Ho Lee
  • Patent number: 11390950
    Abstract: A system and method for depositing a film within a reaction chamber are disclosed. An exemplary system includes a temperature measurement device, such as a pyrometer, to measure an exterior wall surface of the reaction chamber. A temperature of the exterior wall surface can be controlled to mitigate cleaning or etching of an interior wall surface of the reaction chamber.
    Type: Grant
    Filed: January 10, 2017
    Date of Patent: July 19, 2022
    Assignee: ASM IP Holding B.V.
    Inventors: Hyeongeu Kim, Tom Kirschenheiter, Eric Hill, Mark Hawkins, Loren Jacobs
  • Patent number: 11387134
    Abstract: Methods and apparatus for processing substrates are provided herein. In some embodiments, a process kit for a substrate support includes: an upper edge ring made of quartz and having an upper surface and a lower surface, wherein the upper surface is substantially planar and the lower surface includes a stepped lower surface to define a radially outermost portion and a radially innermost portion of the upper edge ring.
    Type: Grant
    Filed: January 16, 2019
    Date of Patent: July 12, 2022
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Muhannad Mustafa, Muhammad M. Rasheed, Yu Lei, Avgerinos V. Gelatos, Vikash Banthia, Victor H. Calderon, Shi Wei Toh, Yung-Hsin Lee, Anindita Sen
  • Patent number: 11366482
    Abstract: The present application provides a baking equipment applied in a display panel manufacturing process. In the present application, the first and second pipes are communicated with each other and evenly distributed inside the baking plate, so that the heating liquid injected from the head end of the first pipe heats the baking plate evenly during flowing through the first and second pipes, which improves the uniformity of the baking temperature of the TFT array substrate to be baked by the baking plate, thereby ensuring the stability of the baking process of the TFT array substrate.
    Type: Grant
    Filed: March 13, 2020
    Date of Patent: June 21, 2022
    Assignee: TCL China Star Optoelectronics Technology Co., Ltd.
    Inventor: Xiaolong Meng
  • Patent number: 11332821
    Abstract: Several embodiments of the present technology are directed to actively controlling a temperature of a substrate in a chamber during manufacturing of a material or thin film. In some embodiments, the method can include cooling or heating the substrate to have a temperature within a target range, depositing a material over a surface of the substrate, and controlling the temperature of the substrate while the material is being deposited. In some embodiments, controlling the temperature of the substrate can include removing thermal energy from the substrate by directing a fluid over the substrate to maintain the temperature of the substrate within a target range throughout the deposition process.
    Type: Grant
    Filed: December 17, 2018
    Date of Patent: May 17, 2022
    Assignee: Technetics Group LLC
    Inventors: Angus McFadden, Jason Wright
  • Patent number: 11326274
    Abstract: Provided is a single crystal growth crucible including a first housing and a second housing, in which a fitting portion between the first housing and the second housing has a first protruding portion, which is provided by protruding inner wall side of the first housing toward the second housing, and a second protruding portion, which is provided by protruding outer wall side of the second housing toward the first housing and covers an outer circumferential surface of the first protruding portion, the first protruding portion is formed such that an outer diameter of a tip portion thereof is larger than that of a base portion thereof in the protruding direction, and the second protruding portion is formed such that an inner diameter of a tip portion thereof is smaller than that of a base portion thereof in the protruding direction, the outer diameter of the tip portion of the first protruding portion is equal to or smaller than the inner diameter of the tip portion of the second protruding portion at room tempe
    Type: Grant
    Filed: June 24, 2020
    Date of Patent: May 10, 2022
    Assignee: SHOWA DENKO K.K.
    Inventor: Yohei Fujikawa
  • Patent number: 11330673
    Abstract: A heater for a semiconductor processing chamber is disclosed that includes a ceramic body, and a resistive heating element embedded in the ceramic body, the resistive heating element disposed in a heater coil having an inner central sector and an outer central sector, the inner central sector having a plurality of first peaks and the outer central sector having a plurality of second peaks, wherein the number of first peaks is less than about fifty-six, and the number of second peaks is less than about eighty.
    Type: Grant
    Filed: November 13, 2018
    Date of Patent: May 10, 2022
    Assignee: Applied Materials, Inc.
    Inventor: Govinda Raj
  • Patent number: 11306395
    Abstract: An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C.
    Type: Grant
    Filed: June 28, 2017
    Date of Patent: April 19, 2022
    Assignee: ASM IP Holding B.V.
    Inventors: Eric James Shero, Robert Brennan Milligan, William George Petro, Eric Wang, Fred Alokozai, Dong Li, Hao Wang, Melvin Verbaas, Luping Li
  • Patent number: 11302520
    Abstract: Implementations of the disclosure generally provide an improved pedestal heater for a processing chamber. The pedestal heater includes a temperature-controlled plate having a first surface and a second surface opposing the first surface. The temperature-controlled plate includes an inner zone comprising a first set of heating elements, an outer zone comprising a second set of heating elements, the outer zone surrounding the inner zone, and a continuous thermal choke disposed between the inner zone and the outer zone, and a substrate receiving plate having a first surface and a second surface opposing the first surface, the second surface of the substrate receiving plate is coupled to the first surface of the temperature-controlled plate. The continuous thermal choke enables a very small temperature gradient to be created and manipulated between the inner zone and the outer zone, allowing center-fast or edge-fast etching profile to achieve on a surface of the substrate.
    Type: Grant
    Filed: June 23, 2015
    Date of Patent: April 12, 2022
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Tien Fak Tan, Dmitry Lubomirsky, Kirby H. Floyd, Son T. Nguyen, David Palagashvili, Alexander Tam, Shaofeng Chen
  • Patent number: 11280023
    Abstract: A film formation apparatus is configured to epitaxially grow a film on a surface of a substrate, and the film formation apparatus may include: a stage configured to allow the substrate to be mounted thereon; a heater configured to heat the substrate; a mist supply source configured to supply mist of a solution that comprises a solvent and a material of the film dissolved in the solvent; a heated-gas supply source configured to supply heated gas that comprises gas constituted of a same material as a material of the solvent and has a higher temperature than the mist; and a delivery device configured to deliver the mist and the heated gas to the surface of the substrate.
    Type: Grant
    Filed: January 8, 2020
    Date of Patent: March 22, 2022
    Assignees: DENSO CORPORATION, NATIONAL UNIVERSITY CORPORATION KYOTO INSTITUTE OF TECHNOLOGY
    Inventors: Tatsuji Nagaoka, Hiroyuki Nishinaka, Daisuke Tahara, Masahiro Yoshimoto
  • Patent number: 11242600
    Abstract: Embodiments of the disclosure relate to faceplates for a processing chamber. In one example, a faceplate includes a body having a plurality of apertures formed therethrough. A heating element is disposed within the body, and the heating element circumscribes the plurality of apertures. A support ring is disposed in the body. The support ring circumscribes the heating element. The support ring includes a main body and a cantilever extending radially inward from the main body. The cantilever contacts the body of the faceplate.
    Type: Grant
    Filed: June 17, 2020
    Date of Patent: February 8, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Amit Kumar Bansal, Saket Rathi, Tuan Anh Nguyen
  • Patent number: 11236420
    Abstract: The step of removing the reaction product includes a step of loading a dummy wafer on the loading table, a step of increasing the temperature of the loading table, and a step of removing the reaction product after increasing the temperature of the loading table. In the step of increasing the temperature of the loading table, the temperature of the loading table is increased by opening an expansion valve between an output terminal of a condenser and an input terminal of the heat exchange unit, inputting heat to the loading table, opening a flow dividing valve between an output terminal of a compressor and the input terminal of the heat exchange unit, and adjusting an opening degree of the flow dividing valve.
    Type: Grant
    Filed: April 2, 2019
    Date of Patent: February 1, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Akiyoshi Mitsumori, Shin Yamaguchi
  • Patent number: 11232963
    Abstract: A substrate processing apparatus, provided with a substrate carrier support to support a substrate carrier thereon. The carrier support comprises a top support surface to support the substrate carrier; a thermally insulating body of thermally insulating material; and, a primary heater to heat the carrier support. The thermally insulating body is provided at least between the support surface and the primary heater.
    Type: Grant
    Filed: October 3, 2018
    Date of Patent: January 25, 2022
    Assignee: ASM IP Holding B.V.
    Inventor: Theodorus Oosterlaken
  • Patent number: 11227785
    Abstract: A substrate transfer system includes a load lock module, an atmospheric transfer module having a first sidewall adjacent to the load lock module and a second sidewall remote from the load lock module, the atmospheric transfer module being connected to the load lock module, and a substrate transfer robot disposed in the atmospheric transfer module. The substrate transfer robot includes a base configured to reciprocate along the first sidewall, a substrate transfer arm disposed on the base, and a flow rectifier surrounding the base, the flow rectifier being configured, upon movement of the base, to create an obliquely downward air flow in a direction opposite to a moving direction of the base.
    Type: Grant
    Filed: February 26, 2021
    Date of Patent: January 18, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Norihiko Amikura, Toshiaki Toyomaki
  • Patent number: 11195736
    Abstract: An object of the present invention is to detach a substrate from a table without damaging the substrate by lift pins. One embodiment of the present invention provides a substrate processing apparatus having a vacuum suction table adapted to have a substrate placed thereon, and a plurality of lift pins disposed along the outer periphery of the vacuum suction table. The lift pins each have a distal end portion including a substrate guide surface capable of guiding the outer peripheral end surface of the substrate, and a proximal end portion including a substrate holding surface extending from the substrate guide surface outwardly in a radial direction of the lift pin.
    Type: Grant
    Filed: December 7, 2016
    Date of Patent: December 7, 2021
    Assignee: EBARA CORPORATION
    Inventors: Naoki Toyomura, Mitsuru Miyazaki, Takuya Inoue
  • Patent number: 11189503
    Abstract: Disclosed are substrate drying methods, photoresist developing methods, and/or photolithography methods. The substrate drying method including providing a drying liquid on a substrate, increasing a pressure of the drying liquid to produce a supercritical fluid, and removing the supercritical fluid to dry the substrate may be provided.
    Type: Grant
    Filed: May 23, 2019
    Date of Patent: November 30, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-Hoo Kim, Kuntack Lee, Yong-Jhin Cho, Chawon Koh, Sunghyun Park, Hyosan Lee, Ji Hoon Cha, Soo Young Choi
  • Patent number: 11143964
    Abstract: A substrate treating method for performing a heat treatment of a substrate that has a treated film formed thereon in a heat treating space of a heat treating chamber. The method includes an exhaust step of exhausting gas within the heat treating space formed by a cover enclosing surroundings of a heat treating plate; an inert gas supply step of supplying inert gas from an upper portion of the heat treating space into the heat treating space and supplying inert gas into a gap between an outer peripheral surface of the heat treating plate and an inner wall of the cover; and a heat treating step of performing the heat treatment of the substrate in the heat treating space. The heat treating step is performed after the exhaust step and the inert gas supply step.
    Type: Grant
    Filed: May 11, 2020
    Date of Patent: October 12, 2021
    Inventors: Yasuhiro Fukumoto, Yuji Tanaka, Takeharu Ishii, Tomohiro Matsuo
  • Patent number: 11088009
    Abstract: According to various embodiments, a support table may include: a baseplate including a support structure, the support structure defining a support region over the baseplate to support at least one of a workpiece or a workpiece carrier therein; and one or more light-emitting components disposed between the baseplate and the support region. The one or more light-emitting components are configured to emit light into the support region.
    Type: Grant
    Filed: July 17, 2019
    Date of Patent: August 10, 2021
    Assignee: Infineon Technologies AG
    Inventors: Bernhard Goller, Walter Leitgeb, Daniel Brunner, Lukas Ferlan, Markus Ottowitz
  • Patent number: 11066743
    Abstract: Methods of selectively depositing ruthenium are described. The preferred deposition surface changes based on the substrate temperature during processing. At high temperatures, ruthenium is deposited on a first surface of a conductive material over a second surface of an insulating material. At lower temperatures, ruthenium is deposited on an insulating surface over a conducting surface.
    Type: Grant
    Filed: December 14, 2018
    Date of Patent: July 20, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Yihong Chen, Yong Wu, Srinivas Gandikota, Abhijit Basu Mallick
  • Patent number: 11062886
    Abstract: An apparatus for controlling wafer uniformity is disclosed. In one example, the apparatus includes: a plurality of temperature control elements and a processor. Each of the temperature control elements corresponds to a different portion of a wafer respectively such that the temperature control elements correspond to different portions of the wafer. Each of the temperature control elements is configured to individually control temperature of a corresponding portion of the wafer. The processor determines at least one portion of the wafer for temperature uniformity control, and instruct at least one of the temperature control elements, corresponding to the at least one portion, to adjust temperature of the at least one portion for controlling temperature uniformity of the wafer.
    Type: Grant
    Filed: February 23, 2018
    Date of Patent: July 13, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hsiao-Hua Peng, Hann-Ru Chen
  • Patent number: 11056372
    Abstract: Embodiments described herein relate to a substrate support and techniques for controlling a temperature of the same. The substrate support includes a heating element and an over temperature switch disposed therein. The heating element heats the substrate support and a substrate disposed thereon. The over temperature switch controls a temperature of the heating element and the substrate support. The over temperature switch is operable to switch states in response to a temperature of the substrate support exceeding a predefined temperature.
    Type: Grant
    Filed: June 20, 2019
    Date of Patent: July 6, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Brian T. West, Soundarrajan Jembulingam, Dinkesh Huderi Somanna
  • Patent number: 11043403
    Abstract: The inventive concept relates to a substrate support unit. The substrate support unit includes a chuck stage having an inner space defined by a base surface and sidewalls, a heating unit provided in the inner space, the heating unit including a base plate having a disk shape with an opening in the center and a heat generation part mounted on the base plate and having heating light sources that emit light energy, a quartz window that covers the inner space and has an upper surface on which a substrate is placed, and a reflective member that reflects light energy lost in a lateral direction of the chuck stage toward the substrate.
    Type: Grant
    Filed: April 1, 2019
    Date of Patent: June 22, 2021
    Assignee: SEMES CO., LTD.
    Inventor: Hyun-Su Kim
  • Patent number: 11032945
    Abstract: Disclosed herein is a heat shield assembly for a processing chamber. The processing chamber includes a body having sidewalls, a bottom and a lid that define an interior volume. The heat shield assembly is disposed in the interior volume, and includes a heat shield and a preheat member. The preheat member includes an inner circumference, and is positioned below the heat shield. A susceptor is disposed in the interior volume and configured to support a substrate, and is positioned within the inner circumference of the preheat member. An opening is positioned between the susceptor and the preheat member. A first section of the opening is proximate to a gas inlet, and is covered by the heat shield. A second section of the annular opening is proximate a gas outlet, and is not covered by the heat shield member.
    Type: Grant
    Filed: September 10, 2019
    Date of Patent: June 8, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Shinichi Oki, Yoshinobu Mori
  • Patent number: 11004693
    Abstract: A plurality of flash lamps that irradiate a semiconductor wafer with flash light are arrayed in a plane. The array of the plurality of flash lamps is divided into two zones: a central zone including a region opposed to a central portion of the semiconductor wafer to be treated, and a peripheral zone outside the central zone. During flash light irradiation, an emission time of a flash lamp belonging to the peripheral zone is set to be longer than an emission time of a flash lamp belonging to the central zone. Thus, a greater amount of flash light is applied to the peripheral portion of the semiconductor wafer, where a temperature drop is relatively likely to occur, than to the central portion thereof, thus preventing a relative temperature drop in the peripheral portion of the semiconductor wafer during flash heating.
    Type: Grant
    Filed: May 5, 2016
    Date of Patent: May 11, 2021
    Assignee: SCREEN Holdings Co., Ltd.
    Inventor: Kazuhiko Fuse
  • Patent number: 10974216
    Abstract: A device for removing polycrystalline silicon rod pairs from a Siemens reactor has a body dimensioned to fit over a single rod pair. Once the rod pair is within the body, the body and enclosed rod pair is removed.
    Type: Grant
    Filed: January 15, 2020
    Date of Patent: April 13, 2021
    Assignee: Wacker Chemie AG
    Inventors: Tobias Weiss, Udo Almasy, Stefan Faerber, Reiner Pech
  • Patent number: 10968517
    Abstract: There is provided a cleaning technique that includes supplying a hydrogen fluoride gas into a process vessel, in which a process of forming an oxide film containing at least one of carbon and nitrogen on a substrate has been performed, to remove a deposit containing at least one of carbon and nitrogen adhered to an interior of the process vessel, wherein the act of supplying the hydrogen fluoride gas is performed under a condition in which an etching rate of the deposit adhered to the interior of the process vessel is higher than an etching rate of a quartz member in the process vessel.
    Type: Grant
    Filed: November 19, 2018
    Date of Patent: April 6, 2021
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Shin Sone, Masaya Nagato, Kenji Kameda, Kotaro Konno
  • Patent number: 10957562
    Abstract: A heating device includes a base body that has a placement surface for placing a wafer thereon and a back surface that is on an opposite side of the placement surface; a heating resistor that is embedded in the base body; a cylindrical supporting body that has one end surface and the other end surface, the one end surface being connected to the back surface of the base body, the other end surface being on an opposite side of the one end surface; and a supporting-body channel that includes a portion extending in a direction from the other end surface to the one end surface of the cylindrical supporting body, and that is formed within a peripheral wall of the cylindrical supporting body. The supporting-body channel includes an opening portion that opens inwardly from an outer peripheral surface of the cylindrical supporting body.
    Type: Grant
    Filed: October 25, 2017
    Date of Patent: March 23, 2021
    Assignee: NGK SPARK PLUG CO., LTD.
    Inventor: Noriaki Tokusho
  • Patent number: 10945312
    Abstract: A heating device includes a holding member and having thereinside a plurality of resistive heating elements connected to different pairs of electrode terminals, and a columnar support member joined to the holding member. A first resistive heating element is disposed throughout a first region including a region that overlaps the columnar support member as viewed from the first direction and a second region that is located around an outer periphery of the first region and that does not overlap the columnar support member as viewed from the first direction. A second resistive heating element is disposed throughout the first region and the second region, and an amount of heat generated by the second resistive heating element per unit area of the first region is larger than an amount of heat generated by the second resistive heating element per unit area of the second region.
    Type: Grant
    Filed: September 28, 2017
    Date of Patent: March 9, 2021
    Assignee: NGK SPARK PLUG CO., LTD.
    Inventor: Jun Kurano
  • Patent number: 10903093
    Abstract: A heating device includes: a baseplate; a faceplate provided above the baseplate, the faceplate including a film heater configured to heat a wafer mounted on an upper surface of the faceplate; a sleeve provided between the baseplate and the faceplate, the sleeve including a sleeve body having a vertical through-hole; and a support bolt penetrating the through-hole in the sleeve to support the faceplate on the baseplate, in which a distance from a central axis of the through-hole in the sleeve to a flat surface of an outer portion of the sleeve is less than a distance from the central axis of the through-hole to a locking surface of an inner portion of the sleeve.
    Type: Grant
    Filed: March 4, 2016
    Date of Patent: January 26, 2021
    Assignee: KELK Ltd.
    Inventors: Kazuhiko Kubota, Atsushi Kinoshita, Koji Maeda, Keisuke Ishii
  • Patent number: 10903096
    Abstract: Provided herein are approaches for cooling a process chamber window. In some embodiments, a system for process chamber window cooling may include a process chamber for processing a wafer, wherein the process chamber includes a window. In some embodiments, the window allows light from a lamp assembly to be delivered to the wafer. The system further includes a cooling apparatus operable with the process chamber, the cooling apparatus for delivering a gas to the window. The cooling apparatus includes a support ring supporting the window. The support ring includes a perimeter wall, and a plurality of slots formed through the perimeter wall. The plurality of slots may deliver a gas (e.g., air) across the window.
    Type: Grant
    Filed: July 3, 2018
    Date of Patent: January 26, 2021
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Paul E. Pergande, James D. Strassner
  • Patent number: 10883172
    Abstract: Described herein is a technique capable of improving the quality of a template. According to the technique described herein, there is provided a method of manufacturing a lithography template, including: (a) loading a substrate into a process chamber, the substrate having a pattern region and a non-contacting region at center and peripheral portions thereof, respectively; (b) placing the substrate on a substrate support having a protruding portion and a bottom portion such that a back surface of the non-contacting region of the substrate is supported by the protruding portion; (c) heating the substrate by supplying a first hot gas into a space defined by the protruding portion and the bottom portion while supplying a second hot gas into the process chamber; and (d) processing the substrate after performing (c) by supplying a process gas into the process chamber while supplying the first hot gas into the space.
    Type: Grant
    Filed: January 31, 2018
    Date of Patent: January 5, 2021
    Assignee: Kokusai Electric Corporation
    Inventor: Naofumi Ohashi
  • Patent number: 10886157
    Abstract: A wafer holding unit includes a disk-shaped ceramic substrate having a wafer mounting surface on an upper surface of the substrate, an RF electrode, for example, embedded within the substrate, a metal terminal inserted from a lower surface of the substrate, and a connecting terminal which electrically connects the RF electrode and the metal terminal with each other. The connecting terminal is constituted by a ceramic member and a metal layer. The ceramic member is made of the same material as the substrate and preferably has a truncated conical shape. The metal layer covers a surface of the ceramic member. An upper end of the metal layer is connected to the RF electrode, while a lower end of the metal layer is connected to the metal terminal with a metal member interposed therebetween.
    Type: Grant
    Filed: July 1, 2016
    Date of Patent: January 5, 2021
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Koichi Kimura, Shigenobu Sakita, Kenji Shinma, Daisuke Shimao, Katsuhiro Itakura, Masuhiro Natsuhara, Akira Mikumo
  • Patent number: 10876205
    Abstract: Herein disclosed are systems and methods related to solid source chemical vaporizer vessels and multiple chamber deposition modules. In some embodiments, a solid source chemical vaporizer includes a housing base and a housing lid. Some embodiments also include a first and second tray configured to be housed within the housing base, wherein each tray defines a first serpentine path adapted to hold solid source chemical and allow gas flow thereover. In some embodiments, a multiple chamber deposition module includes first and second vapor phase reaction chambers and a solid source chemical vaporizer vessel to supply each of the first and second vapor phase reaction chambers.
    Type: Grant
    Filed: September 30, 2016
    Date of Patent: December 29, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Mohith Verghese, Eric James Shero, Carl Louis White, Kyle Fondurulia
  • Patent number: 10867832
    Abstract: Apparatus for holding semiconductor wafers during semiconductor manufacturing processes are disclosed. In one embodiment, the apparatus comprises a heat-conductive layer disposed on a supporting base. The apparatus also comprises a plurality of holes formed through the heat-conductive layer and the supporting base. The apparatus further comprises a plurality of heat-conductive lift pins that extend through the holes over the heat-conductive layer at the top end, and make a direct contact with a wafer substrate. The heat-conductive layer and the lift pins are connected to a heating circuit.
    Type: Grant
    Filed: December 9, 2013
    Date of Patent: December 15, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Chien Ling Hwang