Abstract: A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer.

Abstract: A sample holder for physical vapor deposition equipment, which is disposed in a vacuum chamber for holding samples, includes a transmission mechanism and a fastening mechanism. The transmission mechanism includes a stationary shaft and a transmission element. The fastening mechanism includes a rotation shaft unparalleled with the stationary shaft of the transmission mechanism, a support arm for securely holding the rotation shaft, and a rotational disk assembly that drives the rotation shaft and the support arm to rotate about the transmission mechanism. Two ends of the rotation shaft are connected to a rotation element and an affixation base. The rotation element rotates in response to the transmission element, thereby rendering the affixation base to perform inclined rotation. In this manner, the nano-meter ions can be coated continuously and homogeneously onto the sample surface to enhance the surface hardness, the erosion resistance and the life expectancy of the sample.

Abstract: To move an article in and out of plasma during plasma processing, the article is rotated by a first drive around a first axis, and the first drive is itself rotated by a second drive. As a result, the article enters the plasma at different angles for different positions of the first axis. The plasma cross-section at the level at which the plasma contacts the article is asymmetric so that those points on the article that move at a greater linear velocity (due to being farther from the first axis) move longer distances through the plasma. As a result, the plasma processing time becomes more uniform for different points on the article surface. In some embodiments, two shuttles are provided for loading and unloading the plasma processing system. One of the shuttles stands empty waiting to unload the processed articles from the system, while the other shuttle holds unprocessed articles waiting to load them into the system.

Abstract: A substrate support assembly positively secures a substrate holder support to a rotation shaft with respect to rotationally applied forces. A substrate holder support is configured to have an opening in a socket into which, when aligned with an indentation in the rotational shaft to form a passage, a retaining member is removably inserted to engage both the socket opening and the shaft indentation. Methods of rotating a substrate while minimizing rotational slippage of the substrate holder support with respect to the shaft are also provided.

Abstract: A substrate-coating system and an associated substrate-heating method, wherein the substrate-coating system is equipped with a substrate holder (1, 2) for holding at least one substrate at a coating position where it is coated on a coating side, and with a substrate heater (5, 6). The method includes heating at least one substrate that has been brought into such a system while it is being coated. The substrate heater includes a backside heater (6) for actively heating the substrate from its backside, i.e., that side opposite the side to be coated, while it is at its coating position. A heat-conducting element that is brought into thermal contact with a surface of the substrate may also be provided. Heater power is then regulated, based on the difference between the actual substrate temperature and a preset, desired, substrate temperature, and thereby limited such that the temperature of the heat-conducting element will not excessively increase over that of the substrate.

Abstract: The invention relates to a drive mechanism for a vacuum treatment apparatus by which substrate holders can be transported around an axis (A—A) from an entrance airlock to an exit airlock. A stationary supporting column (1) is disposed in the center and on it a rotatory drive chamber (6) is borne which has control rods (9) for a rotation and a radial displacement of the substrate holders. In the rotatory drive chamber (6), a motor (4) and rotatory displacement drives for the control rods (9) are arranged on the supporting column (1), the control rods being in active connection each with a corresponding substrate holder.

Abstract: An apparatus for sequential processing of a workpiece comprises an assembly line processing system. The apparatus comprises multiple workpieces moving in an assembly line fashion under multiple process stations. The multiple process stations provide different processes onto the workpieces for a sequential processing of the workpieces. The sequential processing action is carried out by the movement of the workpieces under the various process stations.

Abstract: The invention is a method of determining a set temperature profile of a method of controlling respective substrate temperatures of plurality of groups in accordance with respective corresponding set temperature profiles. The invention includes a first heat processing step of controlling respective substrate temperatures of a plurality of groups in accordance with respective predetermined provisional set temperature profiles for first-batch substrates that are classified into the plurality of groups, and of introducing a process gas to conduct a heat process to form films on the substrates; a first film-thickness measuring step of measuring a thickness of the films formed on the substrates; and a first set-temperature-profile amending step of respectively amending the provisional set temperature profiles based on the measured thickness, in such a manner that a thickness of films formed during a heat process is substantially the same between the plurality of groups.

Abstract: An evaporation method and an apparatus thereof are disclosed. The evaporation apparatus comprises a rotator, a heater and a source supplying device. The rotator, which is disposed above the central portion of the substrate, can rotate the substrate. An evaporation source is disposed on the heater, and the evaporation region is a circular region. The heater and the source supplying device are disposed below the substrate, wherein the source supplying device provides the evaporation source on the heater along a supply direction. In order to prevent the location of the evaporation source shifts along the supply direction from affecting the uniformity of deposited film, a circular trace is defined and the heater is disposed below the circular trace so that the supplying direction is parallel to the tangential direction of the circular trace.

Abstract: CVD, ALD, and other vapor processes used in processing semiconductor workpieces often require volatilizing a liquid or solid precursor. Certain embodiments of the invention provide improved and/or more consistent volatilization rates by moving a reaction vessel. In one exemplary embodiment, a reaction vessel is rotated about a rotation axis which is disposed at an angle with respect to vertical. This deposits a quantity of the reaction precursor on an interior surface of the vessel's sidewall which is exposed to the headspace as the vessel rotates. Other embodiments employ drivers adapted to move the reaction vessel in other manners, such as a pendulum arm to oscillate the vessel along an arcuate path or a mechanical linkage which moves the vessel along an elliptical path.

Abstract: A semiconductor device has an alignment mark which can be recognized by a conventional wafer prober. A redistribution layer connects electrodes of the semiconductor device to electrode pads located in predetermined positions of the redistribution layer. Metal posts configured to be provided with external connection electrodes are formed on the electrode pads of the redistribution layer. A mark member made of the same material as the metal posts is formed on the redistribution layer. The mark member serves as an alignment mark located in a predetermined positional relationship with the metal posts.

Abstract: A semiconductor processing chamber having a plurality of ribs on an exterior surface of the chamber is provided. The ribs are positioned relative to the chamber such that shadows cast into the chamber by the ribs are offset from one another, thus more uniformly distributing radiant energy entering the chamber. In one embodiment, the ribs are positioned on the exterior surface of the chamber so that they have dissimilar radial distances from a center of the chamber. When a substrate rotates within the chamber, shadows produced by the ribs on a first side of the chamber fall substantially between secondary shadows produced by the ribs on a second side of the chamber. Likewise, shadows produced by the ribs on the second side of the chamber fall substantially between the secondary shadows produced by the ribs on the first side of the chamber.

Abstract: An ESC (Electrostatic Chuck) to chuck an object by electrostatic force, having an ESC main body supporting the object; a guide ring supported by the ESC main body and encircling the object; a dielectric material layer interposed between the guide ring and the ESC main body; a media gas supplier to supply a media gas to the guide ring; and a power supplier to supply power to the ESC main body. With this configuration, the ESC provides an apparatus to chuck a guide ring to an ESC main body, while maintaining the guide ring and an object, such as a wafer, at the same or similar temperature, thereby enhancing uniformity of the object during a semiconductor manufacturing process such as etching, deposition, or the like.

Abstract: The invention provides an MOCVD apparatus and a MOCVD method which can deposit a thin film having satisfactory properties by reducing or preventing temperature decrease of a source gas. An MOCVD apparatus according to the present invention supplies a source gas, as a mixture of an MO source gas, with an oxidizing gas to a substrate to thereby form a film. The MOCVD apparatus includes a substrate holder to hold the substrate; a deposition chamber to house the substrate holder; a supply mechanism to supply the source gas to a surface of the substrate; and a heating device to heat the substrate held by the substrate holder. The deposition chamber includes a substrate housing unit to house the substrate holder holding the substrate, and a passage housing unit connected to the substrate housing unit and constituting a passage to supply the source gas to the substrate.

Abstract: The invention relates to a device for depositing especially, crystalline layers onto one or more, especially, also crystalline substrates in a process chamber using reaction gases which are guided into said process chamber, where they undergo pyrolytic reaction. The device has a heatable support plate wherein at least one substrate holder lies loosely, especially rotationally, with its surface flush with the surroundings. A compensation plate which adjoins the at least one substrate holder, following the contours of the same, is provided on the support plate in order to keep the isothermal profile on the support plate as flat as possible.

Abstract: A substrate heater is provided including a plate-shaped ceramic base having a first side defining a convex heating surface on at least a portion of which a substrate is placed, a resistance-heating element embedded in the ceramic base, and a tubular member joined to a central portion on an opposed second side of the ceramic base. The convex heating surface has a central portion and a peripheral portion, wherein the height of the heating surface decreases from the central portion toward the peripheral portion thereof.

Abstract: A gripper for loading wafers onto an implant wheel W and removing them from the wheel. The gripper having a substrate engaging mechanism (14) for engaging the substrate and a means for rotating this substrate engaging mechanism, such that wafers can be removed from the implant wheel, rotated to a second orientation and replaced without leaving the process chamber.

Abstract: An inexpensive workpiece holder having high reliability and a processing apparatus equipped with the workpiece holder are provided, in which damage caused by oxygen in the air is prevented. The holder comprises: a ceramic body which has an electrode and a heater circuit and which can holds a workpiece; a tubular member having an end portion connected to the ceramic body; a sealing member which is disposed inside the tubular member and which isolates a space inside the tubular member into two regions: a region on the first end portion (“sealed portion”) and a region on the opposite side (“opposite region”); and power supply conductive members which extend from the opposite region side, penetrating the sealing member to the sealed region side, and which are electrically connected to the electrode and the heater circuit.

Abstract: Apparatus for the processing of materials involving placing a material either placed between an radio-frequency electrode and a ground electrode, or which is itself one of the electrodes. This is done in atmospheric pressure conditions. The apparatus effectively etches or cleans substrates, such as silicon wafers, or provides cleaning of spools and drums, and uses a gas containing an inert gas and a chemically reactive gas.

Abstract: A system, apparatus, and method for thermal processing of substrates undergoing lithographic chemical processes is provided. The thermal processing system includes at least one heating element, a heat distributing plate, having a heating surface and being disposed in thermal communication with the at least one heating element. The heat distributing plate is constructed and arranged to distribute heat from the heating element onto the heating surface. A substrate support, supports a substrate at a position above the heating surface and the system includes an actuator that rotates the substrate relative to the heating surface during a heat transfer operation.

Abstract: A substrate treatment method for treating a substrate by supplying a treatment liquid to the substrate while rotating the substrate. The method comprises the steps of: performing a first substrate rotation process for rotating the substrate while clamping the substrate by a first clamping member set; performing a second substrate rotation process after the first substrate rotation step for rotating the substrate while clamping the substrate by the first clamping member set and a second clamping member set provided separately from the first clamping member set; and performing a third substrate rotation process after the second substrate rotation step by unclamping the substrate from the first clamping member set for rotating the substrate while clamping the substrate by the second clamping member set.

Abstract: A reactor for processing semiconductor wafers and the like is provided. The reactor employs one or more rotating components to more evenly distribute temperature or gases within the chamber. In one embodiment, the reactor is provided with rotating reflectors, which reflect the heat generated from radiant heat lamps onto a stationary wafer in a reaction chamber. The rotation of the reflectors provides for a more uniform temperature distribution on the wafer. In another embodiment, the reaction chamber itself is rotated while the wafer is kept stationary. In another embodiment, a rotating showerhead is provided above the wafer through which gases flow to deposit onto the wafer in a uniform manner.

Abstract: A monomer is selected to produce a polymeric film having desirable characteristics for a particular application. The monomer is ppolymerized under controlled conditions to produce a solid oligomer having those characteristics at a molecular weight suitable for evaporation under vacuum at a temperature lower than its thermal decomposition temperature. The process of polymerization to produce the oligomer is carried out under conditions that yield a finite molecular-chain length with no residual reactive groups. The solid oligomer so produced is extruded as a film onto a revolving drum (38) in the evaporation section (40) of a vapor deposition chamber, and then cryocondensed on a cold substrate (44) to form a solid film having the same characteristic selected in the solid oligomer constituting the starting material. As a result of the initial complete reaction to produce the oligomer, the thin-film product does not contain unreacted groups and all attendant disadvantages are avoided.

Abstract: A focus ring assembly, configured to be coupled to a substrate holder in a plasma processing system, comprises a focus ring having one or more wear indicators for determining the lifetime of the focus ring, wherein the coupling of the focus ring to the substrate holder facilitates auto-centering of the focus ring in the plasma processing system. For example, a centering ring mounted on the substrate holder can comprise a centering feature configured to couple with a mating feature on the focus ring.

Abstract: A process for hydrogen annealing silicon wafers that have been cut from an ingot and polished on both sides, thereby removing crystal originated pits (COPs) in their surface. The wafers are then stacked in a tower having at least support surfaces made from virgin polysilicon, that is, polysilicon form by chemical vapor deposition, preferably from monosilane. The tower may include four virgin polysilicon legs have support teeth slotted at inclined angles along the legs and fixed at their opposed ends to bases. The wafers so supported on the virgin polysilicon towers are annealed in a hydrogen ambient at 1250° C. for 12 hours.

Abstract: A single opening is formed in a central portion of a susceptor of a vapor phase epitaxial growth system. Consequently, any dopant diffused off outwardly from the back surface of a wafer during an epitaxial growth process can be exhausted through the opening to the beneath side with respect to the susceptor. As a result, it may become difficult for auto-doping to be induced, even with no protective film formed on a back surface of the wafer. Uniformity in a dopant concentration in the surface may be improved and thus a resistivity may be made uniform. Further, since a temperature of the back surface of the wafer is measured through the opening, a heating temperature can be controlled stably, thus allowing a precise temperature control thereof. Consequently, the epitaxial film as well as the distribution of its resistivity may be made uniform across the entire wafer.

Abstract: A system for processing wafers includes a robot moveable within an enclosure to load and unload workpieces into and out of workpiece processors. A processor includes an upper rotor having alignment pins, and a lower rotor having one or more openings for receiving the alignment pins to form a processing chamber around the workpiece. The alignment pins center the workpiece relative to a rotor spin axis and to an etch or drain groove in the upper rotor. A first fluid outlet delivers processing fluid to a central region of the workpiece. The processing fluid is distributed across the workpiece surface via centrifugal force generated by spinning the processing chamber. Purge gas is optionally delivered into the processing chamber through an annular opening around the first fluid outlet to help remove processing fluid from the processing chamber.

Abstract: A deposition apparatus of depositing deposition material on a wafer in a vacuum chamber includes a deposition boat installed in the vacuum chamber to vaporize the deposition material, a wafer guide on which the wafer is loaded, the wafer guide having a rotational member rotating together with the wafer, a wafer-rotation device rotating the rotational member when the wafer guide approaches, and a wafer-transfer device reciprocating the wafer guide between an inlet of the vacuum chamber, the deposition boat and the wafer-rotation device.

Abstract: A vertical heat-processing apparatus (1) includes a vertical heat-processing furnace (2) having a furnace port (3), a lid (5) movable up and down to open and close the furnace port, and a rotation mechanism (15) disposed on the lid to rotate a holder (13) that holds a number of target substrates (W). The rotation mechanism (15) includes a rotary shaft (16), and a support unit (19) that supports the rotary shaft (16) rotatably through a bearing (17) and sealing member (18). The rotary shaft (16) has a hollow structure with a thin wall, and is supplied with a cooling gas to flow inside and outside the rotary shaft. The support unit (19) has a cooling passage (32) surrounding an upper portion of the rotary shaft (16), and is supplied with a coolant to flow through the cooling passage.

Abstract: A method for heating a wafer to a predetermined temperature, the wafer being held by a holding unit and being accommodated in a processing container equipped with a heater. The wafer is heated to a processing temperature while positioning the wafer at an adjacent position that results form making the wafer approach the heating surface of the heater. After heating the wafer to the predetermined temperature, the wafer is separated from the flat bottom surface of the container body to a processing position. In this state, a processing chamber of the processing container is supplied with a processing fluid, while the holding unit and the heater are relatively moved close to and apart from each other intermittently or continuously. Accordingly, it is possible to quickly heat the substrate to a processing temperature while supplying the substrate with the processing fluid uniformly. This improves throughout and the homogenization in processing.

Abstract: A method and apparatus for processing a thin film on a substrate. The method involves locating the substrate in a first rotational position a location opposed to a process station. The process station has a first axis and is arranged for processing the substrate about that axis. The substrate location is symmetrical about a second axis parallel to but offset from the first axis. The substrate is rotated about an axis generally orthogonal and passing through the wafer location to a second rotational position after an initial process and further processing takes place when the substrate is in the second rotational position.

Abstract: A vacuum processing device includes a driven body 122 provided inside a vacuum processing chamber 104, a driving means 126 provided outside the vacuum processing chamber 104 and a drive shaft 124 connecting the driven body 122 to the driving means 126. A first annular body 152 is secured to the drive shaft 124 and a second annular body 150 is rotatably supported by the first annular body 152. A bellows 148 that airtightly seals the periphery of the drive shaft 124 is provided so as to connect the second annular body 150 with the inner wall of the vacuum processing chamber 104. In this structure, the bellows 148 is allowed to move as one body with the drive shaft 124 during vertical motion of the drive shaft 124 but is made to stay in place during rotational motion of the drive shaft 124. Thus, the drive shaft, which engages in vertical motion and rotational motion, is airtightly sealed by the bellows.

Abstract: A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.

Abstract: This invention relates to an apparatus for electron-ray deposition of a coating on an article. The apparatus comprises a processing chamber with crucibles and electron gun located in the processing chamber and a pre-chamber for loading/unloading cartridges with articles to be coated. The cartridges have a lower fixed conic pinion on a vertical support and are located on a lower cover of a processing chamber. A shaft rotates inside the cartridges which engages an upper running conic pinion of the cartridges.

Abstract: An apparatus for supporting a substrate is described that has a ball adapted to minimize damage between the substrate support and the substrate supported thereon. In one embodiment, an apparatus for supporting a substrate includes ball disposed on an inclined ball support surface. The ball support surface is adapted to bias the ball toward one side of the ball support surface thereby providing space for the ball to roll as the substrate supported thereon changes in length when exposed to thermal influences. In another embodiment, the apparatus further comprises a cage adapted to capture the ball to the ball support surface.

Abstract: The invention provides a film forming apparatus that is capable of forming films sequentially with two types of film forming mechanisms in the same chamber. The film forming apparatus according to the present invention includes a Pt target disposed at one side within a film forming chamber, a sputtering output mechanism to supplying to the Pt target, a Pt vapor deposition source disposed at an other side within the film forming chamber, vapor deposition output mechanism to supply to the Pt vapor deposition source, a substrate holder disposed between the Pt target and the Pt vapor deposition source within the film forming chamber to mount a substrate, a rotating mechanism to move the substrate holder so that the substrate directs to the Pt target or to the Pt vapor deposition source, a heating mechanism to heat the substrate when the substrate is subjected to a sputtering film forming, and a cooling mechanism to cool the substrate when the substrate is subjected to vapor deposition film forming.

Abstract: An exemplary configurable vacuum system is provided for use in coating or plating that provides the capability and versatility to handle substrates of significantly different shapes and sizes. The configurable vacuum system includes a vacuum table assembly, a mechanical drive, an electrical feed through, a filament, and a vacuum chamber. The vacuum table assembly may include a support frame, a sliding means, such as a roller or rollers, an insulated surface, and a platform operable to rotate and support the substrate. The mechanical drive is operable to rotate the platform, the electrical feed through provides an electrical signal to the substrate, and the filament is positioned relative the substrate. The vacuum chamber includes a main opening, an internal volume, and a receiving means, such as a railing or member, operable to receive and support the vacuum table assembly within the internal volume of the vacuum chamber and through the sliding means of the vacuum table assembly.

Abstract: Systems and methods for epitaxial deposition. The reactor includes a hot wall process cavity enclosed by a heater system, a thermal insulation system, and chamber walls. The walls of the process cavity may comprises a material having a substantially similar coefficient thermal expansion as the semiconductor substrate, such as quartz and silicon carbide, and may include an isothermal or near isothermal cavity that may be heated to temperatures as high as 1200 degrees C. Process gases may be injected through a plurality of ports, and are capable of achieving a fine level of distribution control of the gas components, including the film source gas, dopant source gas, and carrier gas. The gas supply system includes additional methods of delivering gas to the process cavity, such as through temperature measurement devices, and through a showerhead.

Abstract: An article (e.g. a semiconductor wafer) is held in an article holder by means of a number of gas flows emitted from gas vortex chambers. Some of the gas flows act to cool an adjacent article portion more than the other gas flows. For example, some of the vortex chambers emit more gas per unit of time than the other chambers. More cooling is provided to those portions of the article which are heated more during processing. Greater temperature uniformity can be achieved.

Abstract: A process chamber for processing or inspecting a substrate such as a semiconductor wafer and the like includes a internal chamber employing dynamic seals at the interface of relatively moving elements. In one embodiment, the internal chamber has a first element, such as a lid or cover, and a second element, such as the body of the chamber. The first element and the second element meet at the interface. The internal chamber may further include a substrate support, mounted inside the internal chamber, supporting a substrate. A first movement system may produce at least one type of relative movement between the first element and the second element. A second movement system may produce second relative movement between the second element and the substrate support. The resulting structure allows movement of the chamber, while maintaining pressure inside the chamber.

Abstract: A vacuum processing apparatus is composed of a cassette block and a vacuum processing block. The cassette block has a cassette table for mounting a plurality of cassettes containing a sample and an atmospheric transfer means. The vacuum processing block has a plurality of processing chambers for performing vacuum processing to the sample and a vacuum transfer means for transferring the sample. Both of the plan views of the cassette block and the vacuum processing block are nearly rectangular, and the width of the cassette block is designed larger than the width of the vacuum processing block, and the plan view of the vacuum processing apparatus is formed in an L-shape or a T-shape.

Abstract: Improvements in the design of a low mass wafer holder are disclosed. The improvements include the use of peripherally located, integral lips to space a wafer or other substrate above the base plate of the wafer holder. A uniform gap is thus provided between the wafer and the base plate, such as will temper rapid heat exchanges, allow gas to flow between the wafer and wafer holder during wafer pick-up, and keep the wafer holder thermally coupled with the wafer. At the same time, thermal disturbance from lip contact with the wafer is reduced. Gas flow during pick-up can be provided through radial channels in a wafer holder upper surface, or through backside gas passages. A thicker ring is provided at the wafer holder perimeter, and is provided in some embodiments as an independent piece to accommodate stresses accompanying thermal gradients. Self-centering mechanisms are provided to keep the wafer holder centered relative to a spider which is subject to differential thermal expansion.

Abstract: This invention relates to a vacuum processing apparatus having vacuum processing chambers the insides of which must be dry cleaned, and to a method of operating such an apparatus. When the vacuum processing chambers are dry-cleaned, dummy substrates are transferred into the vacuum processing chamber by substrates conveyor means from dummy substrate storage means which is disposed in the air atmosphere together with storage means for storing substrates to be processed, and the inside of the vacuum processing chamber is dry-cleaned by generating a plasma. The dummy substrate is returned to the dummy substrate storage means after dry cleaning is completed. Accordingly, any specific mechanism for only the cleaning purpose is not necessary and the construction of the apparatus can be made simple.

Abstract: The present invention relates to a containment chamber that is used for carrying out multiple processing steps such as depositing on, polishing, etching, modifying, rinsing, cleaning, and drying a surface on the workpiece. In one example of the present invention, the chamber is used to electro chemically mechanically deposit a conductive material on a semiconductor wafer. The same containment chamber can then be used to rinse and clean the same wafer. As a result, the present invention eliminates the need for separate processing stations for depositing the conductive material and cleaning the wafer. Thus, with the present invention, costs and physical space are reduced while providing an efficient apparatus and method for carrying out multiple processes on the wafer surface using a containment chamber.

Abstract: A deposition apparatus for organic light emitting devices. The deposition apparatus includes a substrate conveying system and at least a chamber. In this case, the substrate conveying system is a circular turntable shape. The chambers are provided around the substrate conveying system in a specific order. While the substrate conveying system rotates in a circular direction, at least a substrate is transferred into the chambers for deposition. The substrate carrier, a shadow mask and a shadow mask alignment system, are positioned on the substrate carrier. After the deposition, at least a layer is deposited on each of the substrates, so as to manufacture at least an organic light-emitting device.

Abstract: With the deposited-film forming apparatus according to the first embodiment of the present invention, the distance between the tubular barrel and the evaporating section can be varied, unlike the prior art deposited-film forming apparatus and hence, the efficient formation of the deposited film on the surface of each of the work pieces accommodated in the tubular barrel and the inhibition of the softening of the formed film can be achieved simultaneously. Therefore, it is possible to inhibit the damaging of the deposited film formed on the surface of each of the work pieces and the production of projections on the deposited film, and to form a deposited film at a high quality in respect of a corrosion resistance and the like and at low cost.

Abstract: A holder (2; 22; 82) for coating drill with a ceramic coating by a vapor deposition process has a perforated outer wall (4; 24; 84) into which the drills are inserted with their tips projecting. The holder has a hollow interior in which support means locate the inserted drills parallel and with their tips projecting to the same extent. The support means may comprise a correspondingly perforated inner wall (8; 26; 86) and a back wall (10; 28; 88) against which the drills abut, the outer, inner and back walls being parallel to each other. In one configuration, the holder has a hexagonal plan form with alternate outer walls (4) perforated and each with associated inner and back walls (8, 10). The holder is provided with a lid (52) that shields the interior from ingress of the coating material but provides an air passage to assist cooling of the portions of the drills in the holder interior after the coating has been applied.

Abstract: An epitaxial growth furnace is provided for effecting the formation of an epitaxial layer on the surface of a semiconductor wafer by CVD in a reaction chamber of the furnace. The furnace comprises a wafer holder having an opening for exposing a surface area of the wafer which is subject to epitaxial growth, an opening flange adapted for engagement with a chamfered tapered face of a whole peripheral edge of the wafer on the side of said surface area thereof, and a plurality of jaws for detachably engaging with an outer periphery of the wafer on a back surface side of said surface area.

Abstract: The present invention provides a rotating shaft that can extend between two regions having different ambient pressures. The rotating shaft can include a rotatable hollow outer shell that is coupled to a proximal portion of an inner shaft with a limited number of contact points. A plurality of thermal breaks disposed between the inner shaft and the hollow outer shell impede heat transfer between these two components. A rotary seal coupled to the distal portion of the inner shaft preserves the pressure differential between the two regions. Further, a heat sink removes heat transferred to the seal to ensure that the temperature of the seal remains within a range suitable for its operation. The rotating shaft of the invention can be utilized, for example, in an ion implantation system by the coupling of the outer shell to a wafer holder to position and orient a wafer in a path of an ion beam.

Abstract: An exemplary mobile plating system is provided for performing a plating process using virtually any known or available deposition technology for coating or plating as substrate. The mobile plating system may include a vacuum chamber positioned in a mobile storage volume, an external vacuum pump, and a control circuitry to control the operation of some or all of the operations of the external vacuum pump. The external vacuum pump is positioned in the mobile storage volume when the mobile plating system is in transit, and is positioned external to the mobile storage volume when the mobile plating system is stationary and in operation. The external vacuum pump may be mounted on a skid, and, in operation, the external vacuum pump couples with the vacuum chamber to assist with producing a desired pressure in the vacuum chamber.