Abstract: The invention relates to the technical field of plasma treatment of planar elements such as plates, sheets and wafers in electronics and electrical engineering, and in essence is a device for treating wafers with a plasma jet. The device comprises the following elements mounted in a closed chamber: a drive that effects angular displacement of the holders, which are provided with a common rotary drive, a plasma jet generator, and, mounted outside the closed chamber a manipulator and storage devices for the wafers. The wafer to be treated is picked up by the manipulator from the storage device and placed in the holder which together with the wafer passes over the plasma jet generator used for the treatment. The cycle may be repeated a predetermined number of times.

Abstract: An apparatus for heat treatment of a wafer. The apparatus includes a heating chamber having a heat source. A cooling chamber is positioned adjacent to the heating chamber and includes a cooling source. A wafer holder is configured to move between the cooling chamber and the heating chamber through a passageway and one or more shutters defines the size of the passageway. The one or more shutters are movable between an open position where the wafer holder can pass through the passageway and an obstructing position which defines a passageway which is smaller than the passageway defined when the shutter is in the open position.

Abstract: A film-forming device with a substrate rotating mechanism includes a susceptor 30 in the form of a circular disk; a base plate 6 positioned below the susceptor 30 and rotatably retaining the susceptor 30; a revolution generating section 5 rotating the susceptor 30 at the outer periphery of the susceptor 30; a plurality of substrate tray retaining sections 23 arranged on the susceptor 30; a plurality of annular substrate trays 20 rotatably supported in the corresponding substrate tray retaining sections 23; a rotation generating section 4 rotating the substrate trays 20; and a plurality of substrates W retained in the substrate trays 20. The substrates W are revolved by the rotation of the susceptor 30 and rotated by the rotation of the substrate trays 20 to apply a certain film-forming process. The substrates W are rotated and revolved by one or more revolution generating section 5 and the rotation generating section 4.

Abstract: An apparatus for the treatment of semiconductor wafers, comprising a supportive frame and a process table arranged on the supportive frame. The process table comprises a stationary upper platen and a stationary lower plate. An intermediate indexing plate is rotatively arranged between the upper platen and the lower plate. At least one wafer support pin is attached to the indexing plate for the support of a wafer by the indexing plate. An upper housing is arranged on the upper platen and an outer lower housing is arranged on the lower plate. A displacable lower isolation chamber is disposed within the outer lower housing, being displacable against the indexing plate to define a treatment module between the upper housing and the lower isolation chamber in which the wafer is treated. A wafer supporting treatment plate is arranged within the lower isolation chamber, for controlled rapid treatment of a wafer within the treatment module.

Abstract: Method and device for rotating a wafer which is arranged floating in a reactor. The wafer is treated in a reactor of this nature, and it is important for this treatment to be carried out as uniformly as possible. For this purpose, it is proposed to rotate the wafer by allowing the gas flow to emerge perpendicular to the surface of the wafer and then to impart to this gas a component which is tangential with respect to the wafer, thus generating rotation. This tangential component may be generated by the provision of grooves, which may be of spiral or circular design.

Abstract: A vacuum chamber for transporting at least one workpiece has two or more openings defining respective opening areas for treating or handling the at least one workpiece. A transport device is arranged relative to the openings and includes a drive shaft rotatable around a drive shaft rotational axis. Two or more conveyors transport at least one workpiece. A linear driver is operationally independent to linearly move respective ones of the two or more conveyors relative to the drive shaft, with a drive component in a radial direction relative to the axis. An obstructing member is provided for closing the openings when one of the conveyors is positioned adjacent to the openings by rotating the transport device and is moved by the linear drive towards the opening.

Abstract: It is an object of the present invention to provide not only a semiconductor wafer obtained by forming a semiconductor thin film with uniform resistivity and substantially no slip dislocation on a main surface of a semiconductor single crystal substrate having a relatively low dopant concentration, as large as 300 mm or more in diameter but also a vapor phase growth apparatus by means of which such a semiconductor wafer can be produced. A dopant gas is supplied into a reaction chamber 10 through all of the inlet ports 18a to 18f disposed in a width direction of the reaction chamber 10 from a common gas pipe 22a functioning as a main dopant gas pipe. Further, the dopant gas is additionally supplied through inner inlet ports 18a and 18b, and middle inlet ports 18c and 18d, as specific gas inlet ports, into the reaction chamber 10 from first and second auxiliary dopant gas pipes 22b and 22c.

Abstract: The invention relates to a device for depositing layers, particularly crystalline layers, onto substrates. Said device comprises a process chamber arranged in a reactor housing where the floor thereof, comprises at least one substrate holder which is rotatably driven by a gas flow flowing in a feed pipe associated with said floor. Said substrate holder is disposed in a bearing cavity on a gas cushion and held in place thereby. The aim of the invention is to technologically improve the design of a substrate holder which is rotatably mounted in a gas flow, particularly in a linear cross-flowing process chamber. Said bearing cavity is associated with a tray-shaped element arranged below the outflow of the feed pipe.

Abstract: An atomic layer deposition (ALD) reactor (13) is disclosed that includes a substantially cylindrical chamber (15) and a wafer substrate (22) mounted within the chamber (15). The ALD reactor (13) further includes at least one injection tube (14) mounted within the chamber (15) having a plurality of apertures (32) along one side that directs gas emanating from the apertures (32) towards the wafer substrate (22). While gas is pulsed from the injection tube (14), either the water substrate (22) or the injection tube (14) is continuously rotated in a longitudinal plane within the chamber (15) to ensure complete and uniform coverage of the wafer substrate (22) by the gas.

Abstract: A chemical vapor deposition apparatus is provided. The chemical vapor deposition apparatus includes a susceptor support base and a susceptor, and configured to rotate the susceptor with a rotary shaft, a gap as wide as about 1 mm or more is provided along the boundary between the support base and the perimeter of the susceptor to prevent Ga from forming bridges between the support base and the susceptor during growth of III-V compound semiconductors such as GaN, thereby preventing disturbance of rotation.

Abstract: An apparatus for supporting a substrate and a method for positioning a substrate include a substrate support, a stator circumscribing the substrate support, and an actuator. The actuator is coupled to the stator and adapted to change the elevation of the stator and/or adjust an angular orientation of the stator relative to its central axis. As the substrate support is magnetically coupled to the stator, a position, i.e., elevation and angular orientation, of the substrate support may be controlled.

Abstract: A gas driven rotation apparatus for use with a flow of drive gas includes a base member having an upper surface, a main platter overlying the upper surface of the base member, and a satellite platter overlying the main platter. The apparatus is adapted to direct the flow of drive gas between the upper surface of the base member and the main platter such that the main platter is rotated relative to the base member by the flow of drive gas. At least a portion of the flow of drive gas is directed from between the upper surface of the base member and the main platter to between the main platter and the satellite platter such that the satellite platter is rotated relative to the main platter by the at least a portion of the flow of drive gas.

Abstract: An apparatus for processing a semiconductor wafer or similar article includes a reactor having a processing chamber formed by upper and lower rotors. The wafer is supported between the rotors. The rotors are rotated by a spin motor. A processing fluid is introduced onto the top or bottom surface of the wafer, or onto both surfaces, at a central location. The fluid flows outwardly uniformly and in all directions. A wafer support automatically lifts the wafer, so that it can be removed from the reactor by a robot, when the rotors separate from each other after processing.

Abstract: A method for dispensing a chemical, such as an edge bead removal solvent, onto a semiconductor wafer comprising the steps of dispensing the chemical selectively onto the wafer and applying a suction to the area immediately surrounding the location at which the chemical is dispensed onto the wafer. Preferably, the suction is applied substantially simultaneously with the dispensing of the chemical. One specific version of the invention provides an edge bead removal system wherein suction is applied to the area immediately surrounding the solvent dispensing nozzle to remove dissolved coating material and excess solvent from the wafer. In one aspect of this system, an apparatus for removing the edge bead includes a mechanism for dispensing a solvent selectively onto the edge of the wafer, and a mechanism surrounding the dispensing mechanism for vacuuming excess solvent and dissolved coating material from the edge of the wafer.

Abstract: Components of semiconductor processing apparatus are formed at least partially of erosion, corrosion and/or corrosion-erosion resistant ceramic materials. Exemplary ceramic materials can include at least one oxide, nitride, boride, carbide and/or fluoride of hafnium, strontium, lanthanum oxide and/or dysprosium. The ceramic materials can be applied as coatings over substrates to form composite components, or formed into monolithic bodies. The coatings can protect substrates from physical and/or chemical attack. The ceramic materials can be used to form plasma exposed components of semiconductor processing apparatus to provide extended service lives.

Abstract: The prevent invention improves the film thickness distribution in the direction of revolution of substrates by a simple manner in a method for forming coating films, wherein a evaporating source 3 is disposed at a predetermined distance from substrates 2, and when a coating film material is applied from the evaporating source 3 onto the substrate surfaces while revolving the substrates 2, coating films are formed on the substrate surfaces in a condition where the radius of curvature of the substrates 2 obtained by bending the substrates 2 within the elasticity range is made equal to the radius of revolution of the substrates 2.

Abstract: In a PECVD (plasma enhanced chemical vapor deposition) apparatus including a reaction chamber; plural susceptors installed inside the reaction chamber and horizontally mounted with a wafer respectively; a heating means for heating the susceptors; a power supply unit installed outside of the reaction chamber; a plasma electrode receiving RF power from the power supply unit, generating and maintaining plasma inside the reaction chamber; and a rotation jet spray having two spray injectors horizontally rotating and supplying gas inside the reaction chamber, a thin film is deposited by supplying BTMSM vapor and oxygen retaining gas through the spray injector, supplying hydrogen retaining gas through the other spray injector and horizontally rotating the spray injectors in the supply. Herein, a pressure in the reaction chamber is in the range of 0.1 Torr˜1 Torr, the wafer is heated at 25° C.˜400° C., and RF power in the range of 100 W˜2000 W is applied.

Abstract: The present invention is generally directed to a system and process for rotating semiconductor wafers in thermal processing chambers, such as rapid thermal processing chambers and chemical vapor deposition chambers. In accordance with the present invention, a semiconductor wafer is supported on a substrate holder which, in turn, is supported on a rotor. During processing, the rotor is magnetically levitated and magnetically rotated by suspension actuators and rotation actuators positioned outside of the chamber.

Abstract: An imaging system having at least one microsystem array that is made using a wide bandgap semiconductor and configured in a pixel arrangement. The imaging system also including an electronic readout arrangement integrated with the at least one microsystem array.

Abstract: A wafer holding device, comprising a rotating baseplate, a wafer seat which is provided on the rotating baseplate coaxially with the rotating baseplate and which receives a peripheral edge of a wafer by a circumference, a predetermined number of chuck levers rotatably mounted on the wafer seat so that the chuck levers can be rotated around an axis extending in a tangential direction on a circumference of the rotating baseplate, and springs for resiliently pushing an end of the chuck lever toward the wafer seat, wherein the peripheral edge of the wafer received on the wafer seat is pinched by the wafer seat and the chuck lever.

Abstract: In order to ensure uniform coating of workpieces, workpiece holders carrying said workpieces are rotatably mounted at the edge of a turntable, a plurality of which are fastened in succession at adjustable distances to a drivable shaft. In order to trigger intermittent rotations of the workpiece holders, a driver finger of a driving device engages in each case a drive wheel thereof on each revolution of the turntable, so that the workpiece holders are rotated relative to the turntable through a specific angle in a direction opposite to the direction of rotation of said turntable. In order that no readjustment of the driver finger is required, for example in the case of a change of distances between the turntables, said driver finger is fastened to an extension of a rotating ring, which is mounted on the turntable itself so as to be non-displaceable in the direction of the shaft but rotatable about said shaft.

Abstract: A method and apparatus for thermal processing of a workpiece reduces the time taken for a processing gas to be purged, or switched, during one or more processing steps for thermal processing systems. The thermal processing system includes a heating chamber in accordance with one example embodiment of the present invention. A small-volume workpiece enclosure is disposed about the workpiece. A translation mechanism, e.g., in the form of a positioning assembly, supports the small-volume workpiece enclosure for moving the small-volume workpiece enclosure and the workpiece within the heating chamber. The small-volume workpiece enclosure enables the use of relatively smaller amounts of process (ambient) gases, and decreases the purge time of such gases. The heating chamber can have at least one of a thermal radiation intensity gradient and a temperature gradient for thermally processing the workpiece. The heating chamber can have one or more heating elements disposed about the heating chamber.

Abstract: An article which is being processed with plasma is moved during plasma processing so that the motion of the article comprises at least a first rotational motion, a second rotational motion, and a third rotational motion which occur simultaneously. The apparatus that moves the article comprises a first arm rotatable around a first axis, a second arm rotatably attached to the first arm and rotating the article around a second axis, and a rotational mechanism for inducing a rotational motion of the article in addition to, and simultaneously with, the rotation of the first and second arms.

Abstract: A thermal reflow processing system has a rotatable structure to which articles having a reflowable surface are attached. The structure is coupled to a drive motor which causes the structure to rotate at speeds which generate centripetal forces in excess of that of gravity. The system is equipped with at least one radiant heat source. As the articles are being subjected to a centripetal force, the surface is heated by the radiant heat source.

Abstract: A rotary substrate processing apparatus includes a rotor 1 having a holding member for holding a plurality of semiconductor wafers W arranged at appropriate intervals and a motor 4 for rotating the rotor 1. The holding member includes open/close holding rods 3 that are moved to open or close the rotor 1 in inserting the wafers W into the rotor 1 sideways and a plurality of constant-position holding rods 2a to 2d for holding the wafers W in cooperation with the open/close holding rods 3. Among the constant-position holding rods 2a to 2d, at least one constant-position holding rod 2a is equipped with a plurality of press members 5 which move toward respective peripheral portions of the wafers W by centrifugal force due to the rotation of the rotor 1. Consequently, it becomes possible to make the wafers W follow the rotation of the rotor 1 ensurely and also possible to reduce slip between the open/close holding rods 3, the constant-position holding rods 2a to 2d and the wafers W.

Abstract: A substrate holder for holding a substrate (e.g., a wafer or an LCD panel) during plasma processing. The substrate holder is a stack of processing elements which each perform at least one function. The elements include an electrostatic chuck (102), an He gas distribution system (122), multi-zone heating plates (132), and multi-zone cooling system (152). Each element is designed to match the characteristic of the processing system, e.g., by applying heat based on a heat loss characteristic of the substrate during normal processing. The integrated design allows for precise control of the operating conditions, including, but not limited to, fast heating and fast cooling of a substrate.

Abstract: In a first aspect, a rotary vacuum-chuck is provided that may hold a substrate such as a silicon wafer for rotation. The vacuum-chuck includes a hollow rotary shaft and a chuck mounted on the hollow rotary shaft and having a surface adapted to support a substrate. The chuck has one or more openings in fluid communication with the hollow rotary shaft. A venturi is formed near an end of the hollow rotary shaft to apply vacuum to the hollow rotary shaft and the openings in the chuck surface. No seal is required between the end of the hollow rotary shaft and a surrounding stationary block.

Abstract: A multi-nozzle gas spray arm for a spin coating apparatus. In a typical embodiment, the invention comprises a primary spray arm and a secondary spray arm which is confluently connected to the primary spray arm. The primary spray arm ejects a narrow, relatively high-velocity nitrogen stream against a substrate while the secondary spray arm ejects a diffuse, relatively low-velocity nitrogen stream against the substrate as the gas spray arm is typically swept across the surface of the wafer. The diffuse nitrogen flow characteristic of the nitrogen ejected from the secondary spray arm is effective in eliminating water and chemical droplets which otherwise would tend to remain and form dry spots on the wafer surface.

Abstract: A method of reducing by-product deposition inside wafer processing equipment includes providing a chamber having a peripheral inner wall and placing a semiconductor wafer within the chamber. The method also includes placing a ring within the chamber proximate the peripheral inner wall and introducing a plurality of reactant gases into the chamber and reacting the gases. The method also includes introducing a heated gas into the chamber through the ring proximate the peripheral inner wall to increase the temperature of the peripheral inner wall.

Abstract: The present invention relates to an apparatus for coating one or more workpieces such as components to be used in jet engines or industrial turbines. The apparatus comprises a device for simultaneously manipulating a workpiece about multiple axes while holding a center of the workpiece at a fixed position with respect to a source of coating material. The device for manipulating the workpiece preferably comprises a modular fixture while allows the workpiece to be simultaneously rotated about a first axis, rotated about a second axis at an angle to the first axis, and titled through a range of motion such as from +45 degrees to −45 degrees with respect to the first axis.

Abstract: A wafer chuck for use in a semiconductor process chamber capable of producing an inert gas blanket positioned on the chuck from residual chemical vapor in the chamber is disclosed. A plurality of mounting pins for supporting a wafer is further provided in the upper surface for forming an inert gas into a cavity formed between the wafer and the upper surface of the chuck. A plurality of apertures in a sidewall of the body portion for flowing an inert gas into the lower chamber forming an inert gas blanket blocking a passageway between the upper and lower chambers, thus preventing the wafer from damage by residual chemical vapor in the lower chamber.

Abstract: An edge handling chuck which operates to maintain a semiconductor wafer at a desirable orientation while rotating the wafer at high speeds is disclosed. The edge handling chuck consists of a cylindrical plate which holds a silicon wafer using multiple spring loaded edge wafer clamps. Gas passes through a center hole in the cylindrical plate and is dispersed to the atmosphere using multiple pressure relief openings in the cylindrical plate. The purpose of this gas arrangement is to stabilize the wafer due to spinning vortex effects. The cylindrical plate has mounted therein an ertalyte ring which provides an area of angled contact for the wafer. The gas arrangement operates to pass gas to the slight space between the semiconductor wafer and the cylindrical plate, thereby contacting a lower surface of the wafer, and subsequently out of the arrangement using the pressure relief holes.

Abstract: A method for processing a semiconductor wafer or similar article includes the step of spinning the wafer and applying a fluid to a first side of the wafer, while it is spinning. The fluid flows radially outwardly in all directions, over the first side of the wafer, via centrifugal force. As the fluid flows off of the circumferential edge of the wafer, it is contained in an annular reservoir, so that the fluid also flows onto an outer annular area of the second side of the wafer. An opening allows fluid to flow out of the reservoir. The opening defines the location of a parting line beyond which the fluid will not travel on the second side of the wafer. An apparatus for processing a semiconductor wafer or similar article includes a reactor having a processing chamber formed by upper and lower rotors. The wafer is supported between the rotors. The rotors are rotated by a spin motor. A processing fluid is introduced onto the top or bottom surface of the wafer, or onto both surfaces, at a central location.

Abstract: A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer.

Abstract: A semiconductor substrate support apparatus comprises a support chuck having at least one chuck manifold extending through the support chuck, and a rotatable shaft coupled to the support chuck. The shaft has at least one shaft conduit disposed therein and extends through the support chuck. A housing circumscribes the shaft and has a housing conduit adapted for connection to a gas source. A plurality of seals are disposed between the shaft and the housing and thereby define a radial passageway between the at least one shaft conduit and the housing conduit for providing a backside gas to a backside of a wafer disposed on the rotating support chuck.

Abstract: An article which is being processed with plasma is moved during plasma processing so that the motion of the article comprises at least a first rotational motion, a second rotational motion, and a third rotational motion which occur simultaneously. The apparatus that moves the article comprises a first arm rotatable around a first axis, a second arm rotatably attached to the first arm and rotating the article around a second axis, and a rotational mechanism for inducing a rotational motion of the article in addition to, and simultaneously with, the rotation of the first and second arms.

Abstract: The invention relates to a device for depositing layers, particularly crystalline layers, onto substrates. Said device comprises a process chamber arranged in a reactor housing where the floor thereof, comprises at least one substrate holder which is rotatably driven by a gas flow flowing in a feed pipe associated with said floor. Said substrate holder is disposed in a bearing cavity on a gas cushion and held in place thereby. The aim of the invention is to technologically improve the design of a substrate holder which is rotatably mounted in a gas flow, particularly in a linear cross-flowing process chamber. Said bearing cavity is associated with a tray-shaped element arranged below the outflow of the feed pipe.

Abstract: A deposition system is described. The deposition system includes a deposition source that generates deposition flux comprising neutral atoms and molecules. A shield defining an aperture is positioned in the path of the deposition flux. The shield passes the deposition flux through the aperture and substantially blocks the deposition flux from propagating past the shield everywhere else. A substrate support is positioned adjacent to the shield. A dual-scanning system scans the substrate support relative to the aperture with a first and a second motion.

Abstract: An apparatus for processing a workpiece in a micro-environment includes a workpiece housing connected to a motor for rotation. The workpiece housing defines a substantially closed processing chamber therein in which one or more processing fluids are distributed across at least one face of the workpiece by centrifugal force generated during rotation of the housing. A dividing member at the edge of the spinning workpiece separates flow of fluids off of the top and bottom surfaces of the workpiece.

Abstract: The present invention provides a rotating shaft that can extend between two regions having different ambient pressures. The rotating shaft can include a rotatable hollow outer shell that is coupled to a proximal portion of an inner shaft with a limited number of contact points. A plurality of thermal breaks disposed between the inner shaft and the hollow outer shell impede heat transfer between these two components. A rotary seal coupled to the distal portion of the inner shaft preserves the pressure differential between the two regions. Further, a heat sink removes heat transferred to the seal to ensure that the temperature of the seal remains within a range suitable for its operation. The rotating shaft of the invention can be utilized, for example, in an ion implantation system by the coupling of the outer shell to a wafer holder to position and orient a wafer in a path of an ion beam.

Abstract: The invention relates to a device for depositing especially, crystalline layers onto one or more, especially, also crystalline substrates in a process chamber using reaction gases which are guided into said process chamber, where they undergo pyrolytic reaction. The device has a heatable support plate wherein at least one substrate holder lies loosely, especially rotationally, with its surface flush with the surroundings. A compensation plate which adjoins the at least one substrate holder, following the contours of the same, is provided on the support plate in order to keep the isothermal profile on the support plate as flat as possible.

Abstract: Disclosed is a semiconductor device manufacturing apparatus provided with a rotational gas injector for supplying source gases at an upper portion of a reaction chamber. According to the invention, source gases are injected from the upside of the wafers through the rotational type gas injector, and non-reacted gases are exhausted into the downside space of the wafers, so that lowering in the thickness uniformity of a thin film due to the horizontal flow of source gases provided in the conventional art decrease remarkably. Accordingly, although multiple wafers are loaded in a single reaction chamber, a thin film having very high thickness uniformity can be deposited with respect to all the wafers, thereby capable of enhancing the productivity.

Abstract: A method for manufacturing a coated substrate disk, comprises linearly bringing the substrate on a mounting, into an evacuated transport chamber and rotating the mounting in the chamber. The mounting is then extended into a coating position and coating of the substrate takes place. The mounting is then linearly retracted into the chamber again and rotated into a position for guiding the substrate out of the chamber. These steps are repeated for several substrates and then a pump opening into the chamber is closed by means of the mounting or the substrate. The chamber is then flooded and vacuum-tightly closed and the pump opening is released. The chamber is evacuated and the substrate moving and coating steps are repeated for more substrates.

Abstract: To make it easier to move workpieces into and out of reactors in order for them to be treated by CVD therein, the invention provides a device for the CVD treatment of workpieces which comprises a conveyor and at least one reactor secured to the conveyor, the device having at least one mechanical control cam and the reactor having an opening and closing device that is actuated by the at least one control cam.

Abstract: The invention relates to a device for the deposition of in particular, crystalline layers on one or several, in particular, equally crystalline substrates, comprising a process chamber, arranged in a reactor housing, which may be charged with the substrates from above, by means of a reactor housing opening which may be sealed by a cover. The reactor housing opening opens out into a glove box, in particular flushed with highly pure gas and connects electricity, liquid or gas supply lines to the cover. According to the invention, the connection of supply lines for electricity, fluid or gas sources arranged outside the glove box to the cover of the reactor housing arranged within the glove box may be improved, whereby the electricity, fluid or gas supply lines run freely, from outside the glove box, through a flexible tube which is sealed atone end to a flange arrangement rigidly fixed to the cover and sealed at the other end to an opening in the glove box wall.

Abstract: Provided is an atomic layer deposition apparatus that can prevent the degradation of a sheet resistance uniformity as well as enhance the throughput. The atomic layer deposition apparatus of this research includes: a rotary plate in the chamber, wherein a plurality of wafers positioned on the rotary plate to equal distances from the center of the rotary plate; a gas injecting means confronting the upper surface of the rotary plate at the center; and a heating plate cable of controlling the temperature of the wafers according to the location, wherein the heating plate is mounted on the bottom plate and a space is provided between the heating plate and the bottom surface of the rotary plate.

Abstract: An apparatus for depositing thin films on a plurality of substrates has a vacuum chamber, a source of the material or materials to be deposited as the thin film, a source of energy for causing the material to be vaporized, and mechanical apparatus for imparting super-planetary and planetary motion to each substrate while the substrate is exposed to the vapors of the material. When a predetermined thickness of the film on any given substrate is reached the super-planetary motion is halted and only planetary motion and spinning are continued for the given substrate. During this process the thickness of the film being deposited is monitored accurately by an optical instrument having a linear axis of measurement which coincides with the center of the orbiting planetary motion of the substrate and is on the substrate itself.

Abstract: A movable evaporation device, arranged in an evaporation system. The evaporation system has an evaporation chamber and a vacuum system. The vacuum system is connected to the evaporation chamber externally. The evaporation chamber has a rotatable wafer table to fix and rotate a wafer during thin film deposition. The movable evaporation device has several movable evaporation boats to carry evaporation source. Each of the evaporation boat further includes an evaporation boat and a movable arm. The moving arm is connected to a bottom of the evaporation chamber. The moving arms can rotate from 0° to 360°, and the length of the moving arms are determined by the amount and position of the evaporation boats in the evaporation chamber.

Abstract: A wafer conveyor system for use in a vacuum processing apparatus wherein the conveyor structure is provided with a transfer structure, and a robot apparatus is arranged on the transfer structure. The robot provides for rotation of the wafer in a horizontally from a position in a cassette to an opposite position of the cassette.

Abstract: The present invention discloses an ALD method including: respectively loading a plurality of substrates into a plurality of reaction cells, the plurality of reaction cells being disposed in a reaction chamber isolated from an exterior condition; alternately and repeatedly applying various vapor substances onto each substrate such that a thin film is formed on each substrate, wherein a plurality of vapor injection pipes each injecting one of the vapor substances periodically scans over each substrate to apply the various vapor substances alternately and repeatedly onto each substrate.