Abstract: A vapor phase growth apparatus has a plurality of rotation susceptors to hold the semiconductor wafer, and a disk-like revolution susceptor on which the plurality of rotation susceptors are rotatably mounted through a bearing. The plurality of rotation susceptors each are, on its periphery, provided with a pinion gear that meshes with a common gear that allows each of the plurality of rotation susceptors to rotate on its center axis. The outermost end of rotation susceptor is substantially aligned with the outermost end of revolution susceptor and the pinion gear is located directly above the bearing.

Abstract: A multi-chamber processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. The system includes a sputtering chamber and a separate pre-clean chamber, where wafers can be transferred between the two chambers by a robotic arm without breaking a vacuum. The wafers are mounted one-by-one onto a rotating pallet in the pre-cleaning chamber and sputtering chamber. The pallet is firmly fixed to a rotatable table in the sputtering chamber. Copper tubing in the table couples RF energy to the wafers, and a liquid running through the copper tubing controls the temperature of the wafers. Multiple targets, of the same or different materials, may concurrently deposit material on the wafers as the pallet is rotating. Multiple magnets (one for each target) in the magnetron assembly in the sputtering chamber oscillate over their respective targets for uniform target erosion and uniform deposition on the wafers.

Abstract: A system and method for uniform deposition of material layers on wafers in a rotating disk chemical vapor deposition reaction system is provided, wherein one or more substrates are rotated on a carrier about an axis while maintaining surfaces of the one or more substrates substantially perpendicular to the axis of rotation and facing in an upstream direction along the axis of rotation. During rotating a first gas is discharged in the downstream direction towards the one or more substrates from a first set of gas inlets. A second gas is discharged in the downstream direction towards the one or more substrates from at least one movable gas injector, and the at least one movable gas inlet is moved with a component of motion in a radial direction towards or away from the axis of rotation.

Abstract: A device for use in a thermal annealing process for a wafer (T) of material chosen among the semiconductor materials for the purpose of detaching a layer from the wafer at an weakened zone. During annealing, the device applies (1) a basic thermal budget to the wafer, with the basic thermal budget being slightly inferior to the budget necessary to detach the layer, this budget being distributed in an even manner over the weakened zone; and (2) an additional thermal budget is also applied to the wafer locally in a set region of the weakened zone so as to initiate the detachment of the layer in this region.

Abstract: An object of the present invention is to make it possible to uniformly supply of a gas onto a base material in a way simpler and lower in cost, and thus, to realize a high-quality surface treatment. For that purpose, in surface treatment of a base material (12) by supplying a surface-treating gas on the surface of the base material (12) while conveying it in a particular direction, the peripheral surface of a rotor having a cylindrical peripheral surface (24) is made to face, via a gap (23), the surface of the base material (12) or an opposing member (20) formed at a position separated from the base material and the rotor is rotated around the axis in the direction almost perpendicular to the base material (12)-conveying direction, as the means for supplying the surface-treating gas. By the rotation, the surface-treating gas is dragged in by the peripheral surface of the rotor (24), guided into the gap (23), and then, fed from the gap (23) onto the surface of the base material (12).

Abstract: A wafer holder for supporting a wafer within a CVD processing chamber includes a vertically moveable lift ring configured to support the bottom peripheral surface of the wafer, and an inner plug having a top flat surface configured to support the wafer during wafer processing. The lift ring has a central aperture configured to closely surround the inner plug. When a wafer is to be loaded onto the wafer holder, the lift ring is elevated above the inner plug. The wafer is loaded onto the lift ring in the elevated position. Then, the lift ring is maintained in the elevated position for a time period sufficient to allow the wafer temperature to rise to a level that is sufficient to significantly reduce or even substantially prevent thermal shock to the wafer when the wafer is brought into contact with the inner plug. The lift ring is then lowered into surrounding engagement with the inner plug. This is the wafer processing position of the wafer holder.

Abstract: An apparatus for coating surfaces of a workpiece is configured to establish a pressure gradient within internal passageways through the workpiece, so that the coating within the internal passageways exhibits intended characteristics, such as those relating to smoothness or hardness. The coating apparatus may include any or all of a number of cooperative systems, including a plasma generation system, a manipulable workpiece support system, an ionization excitation system configured to increase ionization within or around the workpiece, a biasing system for applying a selected voltage pattern to the workpiece, and a two-chamber system that enables the plasma generation to take place at a first selected pressure and the deposition to occur at a second selected pressure.

Abstract: A wafer processing apparatus is fabricated by depositing a film electrode onto the surface of a base substrate, the structure is then overcoated with a protective coating film layer comprising at least one of a nitride, carbide, carbonitride or oxynitride of elements selected from a group consisting of B, Al, Si, Ga, refractory hard metals, transition metals, and combinations thereof. The film electrode has a coefficient of thermal expansion (CTE) that closely matches the CTE of the underlying base substrate layer as well as the CTE of the protective coating layer.

Abstract: The invention relates to a device for depositing at least one layer on a substrate having one or more susceptors (7) for receiving substrates, comprising a substrate holder (6) that can be rotatably driven and forms the bottom of a process chamber (2), a RF heating system (22) disposed below the susceptor holder (6) and a gas inlet element (4) for introducing process gases into the process chamber. In order to further develop the generic device and to improve the production and advantages of use, it is proposed that the susceptor holder (6) lies in a sliding manner on an essentially IR- and/or RF-permeable supporting plate (14).

Abstract: A method of depositing materials on a non-planar surface is disclosed. The method is effectuated by rotating non-planar substrates as they travel down a translational path of a processing chamber. As the non-planar substrates simultaneously rotate and translate down a processing chamber, the rotation exposes the whole or any desired portion of the surface area of the non-planar substrates to the deposition process, allowing for uniform deposition as desired. Alternatively, any predetermined pattern is able to be exposed on the surface of the non-planar substrates. Such a method effectuates manufacture of non-planar semiconductor devices, including, but not limited to, non-planar light emitting diodes, non-planar photovoltaic cells, and the like.

Abstract: A deposition apparatus and deposition method for forming a film on a substrate are disclosed. A film is deposited on a substrate by exposing the substrate to different flow directions of reactant gases. In one embodiment, the substrate is rotated in the reaction chamber after a film having an intermediate thickness is formed on the substrate. In other embodiments, the substrate is transferred from one reaction chamber to another after a film having an intermediate thickness is formed on the substrate. Accordingly, a film having a uniform thickness is deposited, averaging out depletion effect.

Abstract: An atomic layer deposition (ALD) module is provided with a rotatable carrier plate that holds a plurality of wafer holders at equally spaced angular positions. The plate is rotated to carry the wafers through a plurality of processing stations arranged at similarly equally spaced angular intervals around the axis of rotation of the rotatable plate. Rotation of the carrier plate carries a plurality of substrates successively through a plurality of pairs of stations, each pair including a precursor deposition station and a light activation station. A plurality of rotations may be used to apply a complete ALD film on the substrates. Wafers in different holders on the carrier are simultaneously processed in different stations, with some having precursor deposited thereon and others having the precursor thereon activated by light. One or more transfer stations can be included for loading or unloading wafers to and from the carrier. The number of holders on the carrier equals the number of stations in the module.

Abstract: An apparatus and method for performing uniform gas flow in a processing chamber is provided. In one embodiment, an apparatus is an edge ring that includes an annular body having an annular seal projecting therefrom is provided. The seal is coupled to a side of the annular body opposite a side adapted to seat on the substrate support. In another embodiment, a processing system is provided that includes a chamber body, a lid, a substrate support and a plurality of flow control orifices. The lid is disposed on the chamber body and defining an interior volume therewith. The substrate support is disposed in the interior volume and at least partially defines a processing region with the lid. The flow control orifices are disposed between the substrate support and the lid. The flow control orifices are adapted to control flow of gases exiting the processing region.

Abstract: The present invention relates to a system for supporting and rotating a susceptor within the treatment chamber of a wafer treatment apparatus comprising a support member (2) placed inside the treatment chamber and capable of supporting a susceptor (3), means (4) capable of lifting the support member (2) via a lifting gas flow, and means (5) capable of rotating the support member (2) via a rotation gas flow.

Abstract: A plasma reactor for processing a workpiece includes a process chamber comprising an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to said ceiling, a workpiece support pedestal inside the chamber and generally facing the ceiling, process gas injection apparatus coupled to the chamber and a vacuum pump coupled to the chamber. The reactor further includes a plasma source power applicator overlying the ceiling and comprising a radially inner applicator portion and a radially outer applicator portion, and RF power apparatus coupled to said inner and outer applicator portions, and tilt apparatus capable of tilting either the workpiece support pedestal or the outer applicator portion about a radial axis perpendicular to said axis of symmetry and capable of rotating said workpiece support pedestal about said axis of symmetry.

Abstract: A substrate treatment method for treating a substrate by supplying a treatment liquid to the substrate while rotating the substrate. The method comprises the steps of: performing a first substrate rotation process for rotating the substrate while clamping the substrate by a first clamping member set; performing a second substrate rotation process after the first substrate rotation step for rotating the substrate while clamping the substrate by the first clamping member set and a second clamping member set provided separately from the first clamping member set; and performing a third substrate rotation process after the second substrate rotation step by unclamping the substrate from the first clamping member set for rotating the substrate while clamping the substrate by the second clamping member set.

Abstract: The present invention provides a gas introducing mechanism and a processing apparatus for processing an object to be processed, which can supply a gas uniformly over the whole region of a processing space so as to enhance uniformity of a process in the surface of the object to be processed. The gas introducing mechanism 50, which is adapted to provide a process to the object W to be processed, by using the gas, in a processing vessel 4, includes a gas introducing ring member 54 for introducing the gas from the exterior of the processing vessel 4, a disk-like rotary base 56 provided rotatably below a top plate 48 in the processing vessel 4, and a ring-shaped gas injection ring member 60 provided around a rotary base 56 so as to be closer and opposed to the gas introducing ring member 54. A gas injecting slit 58 is provided in the ring-shaped gas injection ring member 60, the slit 58 being formed along the circumferential direction of the rotary base.

Abstract: A wiring member which becomes substantially symmetrical on the plane of an electrostatic chuck unit is connected to the tip end of an RF introduction rod between the RF introduction rod and the electrostatic chuck unit in order to make uniform generation of an electric field due to bias RF which becomes a cause of plasma damage. The connection point between the electrostatic chuck unit and the wiring member may be single or plural.

Abstract: On a wafer holding area 50 on the upper surface of a susceptor 22, a wafer W is supported by a wafer support 54 such that a gap with a predetermined distance is formed between the wafer W and a wafer heating surface 52. A projection 58 that decreases the distance of the gap with respect to the wafer W is formed on the wafer heating surface 52. At this time, the heating condition for the wafer W by the susceptor 22 is adjusted by means of the distances of the gaps at the respective portions of the wafer holding area 50. Thus, the uniformity of the planar temperature distribution of the wafer W and that of the thickness distribution of the formed film can be improved.

Abstract: A susceptor at least a surface thereof being coated with SiC, includes a recess where an wafer is mounted, the recess having an round portion disposed on a lower portion of an outer circumferential portion of the recess, a ring-shaped SiC crystal growth surface portion provided within the round portion in a range of 0.05 mm or more and 0.3 mm or less defined from an outer circumference vertical portion of the recess and a contact portion, where the susceptor contacts with the wafer on the recess, having a surface roughness Ra in a range of 0.5 ?m or more and 3 ?m or less.

Abstract: [Problems] A thin film forming apparatus such that a substrate can be easily fixed/removed to/from the outer circumferential surface of a drum type substrate holder through a simple arrangement. [Means for Solving Problems] The drum type substrate holder (5) is supported in a horizontal posture rotatably about a horizontal rotational shaft in a film deposition chamber A jig (13) holding a substrate (12) fixedly is transferred by an arm horizontally onto the outer circumferential surface of the drum type substrate holder (5), and an end part (13b) of the substrate fixing jig (13) can be secured by a securing device (14) provided at the corner part (5a) of the outer circumferential surface of the drum type substrate holder(5).

Abstract: A system for an apparatus of the type adapted to treat substrates and/or wafers is described and comprises a stationary base element and a movable support for at least one substrate or at least one wafer, the support being rotatable above the element about a stationary axis; a chamber, and at least one duct is provided for the admission of at least one gas-flow to the chamber in order to raise the support; the system also comprises means for converting the flow of gas into the chamber into rotation of the support.

Abstract: A chemical vapor deposition apparatus is provided. The chemical vapor deposition apparatus includes a susceptor support base and a susceptor, and configured to rotate the susceptor with a rotary shaft, a gap as wide as about 1 mm or more is provided along the boundary between the support base and the perimeter of the susceptor to prevent Ga from forming bridges between the support base and the susceptor during growth of III-V compound semiconductors such as GaN, thereby preventing disturbance of rotation.

Abstract: The invention relates to a device for depositing at least one especially thin layer onto at least one substrate (9). Said device comprises a process chamber (1, 20, 11, 11?, 40, 21), housed in a reactor housing (2) and comprising a movable susceptor (20) which carries the at least one substrate (9). A plurality of gas feed lines (24) run into said process chamber and feed different process gases which comprise coat-forming components. Said process gases can be fed to the process chamber in subsequent process steps, thereby depositing the coat-forming components onto the substrate (9). In order to increase the throughput of said method, the process chamber is provided with a plurality of separate deposition chambers (11, 11?) into which different gas feed lines (24, 24?) run, thereby feeding individual gas compositions. The substrate (9) can be fed to said chambers one after the other by moving the susceptor (20) and depositing different layers or layer components.

Abstract: A wafer support for an ion implanter includes a wafer holder and a support arm for the holder in the implant chamber. A portion of the support arm adjacent the wafer holder is at least intermittently exposed to the ion beam during implantation, as a result of the relative scanning of the ion beam and the wafer holder. An arm shield mechanism has a plurality of shielding surfaces which can be selectively disposed to receive the ion beam to protect the exposed portion of the support arm. The shielding surfaces may form a sleeve arranged over the arm which may be rotatable above the arm to present selected surfaces to the ion beam. Cross contamination when successively implanting different species can be reduced by presenting different shield surfaces to the beam.

Abstract: Method and device for rotating a wafer which is arranged floating in a reactor. The wafer is treated in a reactor of this nature, and it is important for this treatment to be carried out as uniformly as possible. For this purpose, it is proposed to rotate the wafer by allowing the gas flow to emerge perpendicular to the surface of the wafer and then to impart to this gas a component which is tangential with respect to the wafer, thus generating rotation. This tangential component may be generated by the provision of grooves, which may be of spiral or circular design.

Abstract: A method and apparatus involve providing a supply of nitrogen gas, heating the supply of nitrogen gas to a temperature, and ejecting the heated nitrogen gas through the exhaust line of the baking chamber on a periodic basis. The temperature is between a temperature of the hot plate and a temperature that is less than a glass transition temperature of a film being treated.

Abstract: A substrate processing apparatus is provided. The apparatus includes a plurality of fluid suppliers 61, 61, 63 for supplying different processing fluids. In processing a wafer W, the substrate processing apparatus moves the fluid suppliers 61, 62, 63 along the peripheral part of the wafer W relatively. The fluid suppliers 61, 62, 63 are arranged in a direction extending from the circumference of the wafer W to its inside. With the arrangement, the apparatus is capable of stable processing of the wafer W in spite of rotating the wafer W at a low speed. Further, it is possible to improve a throughput of the apparatus in resist processing.

Abstract: A laser monitoring and controlling apparatus is disclosed that includes a laser, a data server and a laser Graphical User Interface (GUI). In an embodiment, the apparatus further includes, an imaging means and means for displaying images from the imaging means on the GUI.

Abstract: A thermally sprayed member or an electrode includes a basic material, a thermally sprayed film formed on the surface of the basic material, the thermally sprayed film being made of an insulating ceramic and a metallic intermediate layer provided between the basic material and the thermally sprayed film for increasing a bonding force therebetween, wherein the thermally sprayed film side of the member is exposed to a high frequency plasma atmosphere and the electrode is intended to form a high frequency plasma on the side of the thermally sprayed film. The basic material includes a base portion made of a conductive material and a dielectric portion provided to include a part of a surface of the basic material. Further, the intermediate layer is comprised of a plurality of island-shaped parts isolated from each other.

Abstract: A substrate processing apparatus includes a processing chamber, a substrate holding part that holds substrates of required numbers in the processing chamber, a gas supply/exhaust part that supplies or exhausts required gas into the processing chamber, a rotation part that rotates the substrate holding part, a first heating part provided in the substrate holding part so as to face at least an upper surface of each substrate held by the substrate holding part, and a power supply part that supplies power to the first heating part in a non-contact state by electromagnetic coupling.

Abstract: A coating device includes a box-shaped processing chamber. Slits are respectively provided on four side surfaces of the processing chamber. A box-shaped housing is provided so as to surround the processing chamber. A space is formed between the processing chamber and the housing. A fan filter unit for forming downflow in the space is provided on the top of the housing. Air supplied to the fan filter unit is cleaned by the fan filter unit, and is supplied to the space. The air supplied to the space is supplied to the processing chamber through each of the slits in the processing chamber. This causes a twister-shaped air current to be generated within the processing chamber.

Abstract: Metal organic chemical vapor deposition equipment is metal organic chemical vapor deposition equipment for forming a film on a substrate by using a reactant gas, and includes a susceptor heating the substrate and having a holding surface for holding the substrate, and a flow channel for introducing the reactant gas to the substrate. The susceptor is rotatable with the holding surface kept facing an inner portion of the flow channel, and a height of the flow channel along a flow direction of the reactant gas is kept constant from a position to a position, and is monotonically decreased from the position to the downstream side. It is thereby possible to improve film formation efficiency while allowing the formed film to have a uniform thickness.

Abstract: Reaction chamer (10) for an epitaxial reactor comprising a belljar (14) made of insulating, transparent and chemically resistant material, a susceptor (24) provided with disk-shaped cavities (34a-n) for receiving wafers (36a-n) of material to be treated and having an insulating and chemically resistant plate (40) arranged above it, and a diffuser (54) consisting of a plurality of outlet pipes (106a-f) mounted on a cap (52) fixed to an upper opening (50) of the belljar (14).

Abstract: Substrates, such as spectacle lenses for example, may be provided with a coating which is not uniform by way of screens. The screens are aperture rings, arranged concentric to a symmetry axis of the vaporising crucible in a vacuum coating unit, by way of a screen holder. The spectacle lenses are disposed on a substrate holder also in circles about the symmetry axis. The shadows cast by the aperture rings cover but a partial region of the spectacles lenses such that those regions of the lenses receive less coating than in the unshaded free regions. The aperture rings are exchangeable in order to match the coating process to the customer requirements. Furthermore, the separation of the subtrate holder from the aperture rings is adjustable.

Abstract: The present invention relates to an apparatus for coating one or more workpieces such as components to be used in jet engines or industrial turbines. The apparatus comprises a device for simultaneously manipulating a workpiece about multiple axes while holding a center of the workpiece at a fixed position with respect to a source of coating material. The device for manipulating the workpiece preferably comprises a modular fixture while allows the workpiece to be simultaneously rotated about a first axis, rotated about a second axis at an angle to the first axis, and titled through a range of motion such as from +45 degrees to ?45 degrees with respect to the first axis.

Abstract: Semiconductor technology requires the use of object holders, which are capable of holding wafers securely, also during rotation. In order to save time and expense, such holders should be suitable for integration directly into a processing facility, wherever possible. According to the invention it is proposed to provide centrally mounted holders which comprise support surfaces for the wafer and pivotable gripper fingers, in which the gripper fingers are pretensioned by means of at least one pretension element in the holding position and are actuated through one opening mechanism, in which at least one opening mechanism and at least one pretension element are integrated in the central clamping arm fixture and/or in the clamping arms.

Abstract: In one embodiment, the invention is a guard ring for reducing particle entrapment along a moveable shaft of a substrate support. In one embodiment, the guard ring comprises a substantially annular guard ring positioned within a step formed in a sleeve that circumscribes the shaft. The guard ring is positioned to substantially seal a gap separating the shaft from the sleeve, so that the amount of particles and foreign matter that travel within or become trapped in the gap is substantially reduced. In another embodiment, a guard ring comprises a base portion having an inner perimeter and an outer perimeter, a first flange coupled to the inner perimeter, a second flange coupled to the outer perimeter, and a continuous channel separating the first flange from the second flange. The first flange is adapted to function as a spring that accommodates displacement of the shaft.

Abstract: The barrel type susceptor for use in the semiconductor epitaxial growth is characterized in that a face plate 5 of a susceptor main body 2 having the shape of a truncated cone is partitioned into two or more in a longitudinal direction thereof, each partition being provided with a wafer mounting concave portion 6a, 6b, 6c on which a wafer is laid, and the inclination angle ?a, ?b, ?c of a bottom face 6a1, 6b1, 6c1 of the concave portion for each partition to the vertical line is gradually decreased in each partition from the upper part to the lower part.

Abstract: A semiconductor-processing apparatus comprises a susceptor and removable placing blocks detachably placed at a periphery of the susceptor for transferring a substrate. Retractable supporting members are provided for detaching/attaching the placing blocks from/to the susceptor.

Abstract: A cleaning processing apparatus comprises a spin chuck for holding a wafer W, an under plate being positioned to face the back surface of the wafer W with a prescribed gap provided therebetween, a support member for supporting the under plate, and a nozzle hole formed to extended through the plate member and the support member. A chemical liquid, a pure water and a gas can be supplied into a nozzle hole through opening-closing valves, and the chemical liquid and the pure water remaining inside the nozzle hole can be sucked by a sucking device. A pure water remaining inside the nozzle hole is sucked and removed by using the sucking device after the processing of the wafer W with a pure water and, then, a gas is spurted onto the back surface of the wafer W.

Abstract: An apparatus for depositing thin film on a processing target includes: a reaction space; a susceptor movable up and down and rotatable around its center axis; and isolation walls that divide the reaction space into multiple compartments including source gas compartments and purge gas compartments, wherein when the susceptor is raised for film deposition, a small gap is created between the susceptor and the isolation walls, thereby establishing gaseous separation between the respective compartments, wherein each source gas compartment and each purge gas compartment are provided alternately in a susceptor-rotating direction of the susceptor.

Abstract: An inexpensive workpiece holder having high reliability and a processing apparatus equipped with the workpiece holder are provided, in which damage caused by oxygen in the air is prevented. The holder comprises: a ceramic body which has an electrode and a heater circuit and which can holds a workpiece; a tubular member having an end portion connected to the ceramic body; a sealing member which is disposed inside the tubular member and which isolates a space inside the tubular member into two regions: a region on the first end portion (“sealed portion”) and a region on the opposite side (“opposite region”); and power supply conductive members which extend from the opposite region side, penetrating the sealing member to the sealed region side, and which are electrically connected to the electrode and the heater circuit.

Abstract: Generally, a substrate support member for supporting a substrate is provided. In one embodiment, a substrate support member for supporting a substrate includes a body coupled to a lower shield. The body has an upper surface adapted to support the substrate and a lower surface. The lower shield has a center portion and a lip. The lip is disposed radially outward of the body and projects towards a plane defined by the first surface. The lip is disposed in a spaced-apart relation from the body. The lower shield is adapted to interface with an upper shield disposed in a processing chamber to define a labyrinth gap that substantially prevents plasma from migrating below the member. The lower shield, in another embodiment, provides the plasma with a short RF ground return path.

Abstract: A substrate treatment method for treating a substrate by supplying a treatment liquid to the substrate while rotating the substrate. The method comprises the steps of: performing a first substrate rotation process for rotating the substrate while clamping the substrate by a first clamping member set; performing a second substrate rotation process after the first substrate rotation step for rotating the substrate while clamping the substrate by the first clamping member set and a second clamping member set provided separately from the first clamping member set; and performing a third substrate rotation process after the second substrate rotation step by unclamping the substrate from the first clamping member set for rotating the substrate while clamping the substrate by the second clamping member set.

Abstract: A substrate holding apparatus is provided. The substrate holding apparatus includes a chuck yoke, a plurality of arm assemblies, and a plurality of gripper assemblies. A first end of each of the arm assemblies is connected to the chuck yoke and each of the arm assemblies has a spring. A second end of each of the arm assemblies is connected to a respective one of the plurality of grippers. The chuck yoke is capable of rotating so as to move each of the plurality of arm assemblies and respective plurality of gripper assemblies into either a closed position or an open position. A compression force from each of the springs is applied to a substrate when the grippers are moved to the closed position.

Abstract: A method and apparatus for controlling a substrate temperature during an electroless deposition process. The apparatus includes a deposition cell configured to support a substrate at a position above a fluid distribution member. A heated fluid is dispensed from the fluid distribution member and contacts the backside of the substrate, thus heating the substrate. The fluid is dispensed from apertures configured to maintain a constant temperature across the substrate surface. The method includes flowing a heated fluid through a diffusion member against a backside of the substrate in a configuration that is configured to generate a constant processing temperature across the front side or processing side of the substrate.

Abstract: Embodiments of the present invention provide an apparatus for constraining and supporting the lift pins to prevent or minimize lateral movement of the lift pins that causes substrate hand-off problems and associated degradation in substrate processing characteristics and results. In one embodiment, a lift pin assembly for manipulating a substrate above a support surface of a substrate support comprises a plurality of lift pins movable between an up position and a down position. The lift pins include top ends and bottom ends. The top ends are configured to be lifted above the support surface of the substrate support to contact a bottom surface of the substrate in the up position. The top ends are configured to be positioned at or below the support surface of the substrate support in the down position.

Abstract: Disclosed is an electrostatic chuck and system for maintaining a device flat within the electrostatic chuck. The electrostatic chuck has a plate, height adjustment mechanisms connected to the plate; and electrostatic chuck pins connected to the height adjustment mechanisms. The system provides a measurement tool adapted to measure the flatness of the device held by the electrostatic chuck pins and a computer connected to the height adjustment mechanisms and the measurement tool. The computer adjusts the flatness of the device by adjusting the height adjustment mechanisms based on feedback from the measurement tool. The computer is adapted to change the shape of the device to conform to a pre-existing standard.

Abstract: Continuously operating furnace and method for obtaining thermal diffusion coating on the outside surface of metallic articles. The furnace is configured as a tunnel through which in succession are advanced closed containers filled with the processed articles and with powder mixture, containing diffusing specie. A chain conveyor, passing through the furnace, advances the containers along a transportation path. The furnace is provided with plurality of stopper means, capable to intermittently prevent the advancement of the containers and to retain them in discrete positions, situated along the transportation path. The containers advance in parallel being always directed perpendicularly to the transportation path and their retention in the discrete positions causes their rotation about their longitudinal axes. Continuous operation is associated with improved efficiency and increased capacity.