Abstract: A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.

Abstract: A planetary multi-substrate holder system for material deposition includes a substrate holder having circumferentially shaped openings in which disk-like substrates of a smaller diameter than the diameter of the openings are maintained. Upon rotation of the substrate holder, either in a vertical plane, or in a horizontal plane, the substrates self-rotate within each opening due to either gravity force (for vertically rotated substrate holder), or due to centrifugal force (for horizontally rotated substrate holder) applied to the substrates. The planetary multi-substrate system obviates the need for mechanical individual gears to rotate substrates for material deposition, and, as a sequence, yields an extended service life of the system, as well as agreeability with high temperatures used in material deposition process, and reduced cost of a final product.

Abstract: A gas driven rotation apparatus for use with a flow of drive gas includes a base member having an upper surface, a main platter overlying the upper surface of the base member, and a satellite platter overlying the main platter. The apparatus is adapted to direct the flow of drive gas between the upper surface of the base member and the main platter such that the main platter is rotated relative to the base member by the flow of drive gas. At least a portion of the flow of drive gas is directed from between the upper surface of the base member and the main platter to between the main platter and the satellite platter such that the satellite platter is rotated relative to the main platter by the at least a portion of the flow of drive gas.

Abstract: The present invention provides a thin film deposition apparatus for producing an optical film with an optical characteristic on a deposition substrate in a vacuum chamber by depositing a film producing material on the deposition substrate, comprising:

Abstract: A vacuum treatment workpiece support and method for a vacuum treatment apparatus, uses a sun system that is rotatable with respect to the apparatus about a sun system axle. The sun system is coupled to an apparatus-side drive. At least one planet system supported on the sun system, is rotatable about a planet axle and is provided with a driving coupling with respect to the apparatus. At least one moon system is supported on the planet system, and is rotatable about a moon axle with a driving connection to the sun system. A receiver for at least one workpiece is provided on the moon system. The driving connection is established, at least during operation of the apparatus, in an uninterrupted manner, between the sun system and the moon system.

Abstract: The present invention relates to a method and to apparatus for depositing thin layers. The technical field of the invention is that of manufacturing thin layer optical devices. In the invention, apparatus for depositing thin layers on a plurality of substrates comprises means for producing a light beam for monitoring the optical thicknesses of the substrates.

Abstract: A substrate processing device in which a film is formed on a substrate while a magnetic field, by a magnet arranged in the periphery of a substrate holder, is imparted on to the surface of a substrate mounted on the substrate holder while the substrate holder is rotated, wherein a rotation mechanism for the magnet and a rotation mechanism for the substrate holder are independently provided and controlled and, furthermore, in that it is provided with a device for detection of the magnetic field orientation, a device for detection of the prescribed orientation of the substrate, and a mechanism which, using the output of said two detection devices, affords rotation in which the prescribed direction of the substrate and the direction of the magnetic field are aligned within a prescribed angle.

Abstract: Vapor deposition of a uniform thickness thin film of lubricant on at least one surface of a substrate, comprises the steps of: (a) providing an apparatus comprising: (i) a chamber having an interior space maintained below atmospheric pressure; (ii) a substrate loader/unloader for supplying the interior space with at least one substrate and for withdrawing at least one substrate from the interior space; (iii) at least one lubricant vapor source for supplying the interior space with a stream of lubricant vapor; and (iv) a substrate transporter/conveyor for continuously moving at least one substrate past the stream of vapor from the at least one lubricant vapor source; (b) supplying the interior space with a substrate having at least one surface; (c) continuously moving the substrate past the stream of lubricant vapor and depositing a uniform thickness thin film of the lubricant on the at least one surface; and (d) withdrawing the lubricant-coated substrate from the interior space.

Abstract: An evaporation apparatus with high utilization efficiency for EL materials and excellent film uniformity is provided. The invention is an evaporation apparatus having a movable evaporation source and a substrate rotating unit, in which the space between an evaporation source holder and a workpiece (substrate) is narrowed to 30 cm or below, preferably 20 cm, more preferably 5 to 15 cm, to improve the utilization efficiency for EL materials. In evaporation, the evaporation source holder is moved in the X-direction or the Y-direction, and the workpiece (substrate) is rotated for deposition. Therefore, film uniformity is improved.

Abstract: A manufacturing process of Christmas tree decorations where glass half-products are first blown to required dimensions and shapes, including the process stem. This glass half-product is fixed into the rack and placed into the metal-coating device where, under vacuum conditions, a thin (1 to 7 microns) layer of metals and/or their alloys is coated on its surface by vacuum plating or vacuum powder coating processes. The metal-coated surfaces created this way may be finished in various colors using clear and color varnishes either gloss or matt. The glass half-products for Christmas tree decorations may be provided with masking in the place of intended decor before the half-product is put into the vacuum metal-coating device. After the masking elements are removed, clear non-coated spots are created on the decoration surfaces. The rack accommodating the glass half-products of decorations is for their placement into the metal-coating device when above methods are performed.

Abstract: An exemplary method for using a mobile plating system is provided that includes locating the mobile plating system at a desired location for plating, positioning an external vacuum pump from an interior position of a mobile storage volume of the mobile plasma plating system to an exterior position, and coupling the external vacuum pump to a vacuum chamber within the mobile storage volume of the mobile plasma plating system using a flexible piping segment, rigid coupling with a dampening effect, or other arrangement operable to reduce and/or eliminate the mechanical vibrations within the vacuum chamber due to the operation of the external vacuum pump.

Abstract: A semiconductor processing reactor includes a rotating susceptor having at least one substrate holder for supporting a substrate during processing. A susceptor motor is coupled to the rotating susceptor and a substrate holder motor is coupled to the substrate holder. The susceptor motor controls the rotation of the rotating susceptor and the substrate holder motor controls the rotation of the substrate holder. This allows the rotating susceptor to be rotated independent of the rotation of the substrate holder. Further, the substrate holder lifts the substrate above the rotating susceptor allowing automated loading and unloading of the substrate.

Abstract: A system for preventing contaminants and particulates from coming into contact with a back side of a workpiece as the workpiece is vacuum held on a chuck or robotic end effector.

Abstract: An exemplary mobile plating system is provided for performing a plating process using virtually any known or available deposition technology for coating or plating as substrate. The mobile plating system may include a vacuum chamber positioned in a mobile storage volume, an external vacuum pump, and a control circuitry to control the operation of some or all of the operations of the external vacuum pump. The external vacuum pump is positioned in the mobile storage volume when the mobile plating system is in transit, and is positioned external to the mobile storage volume when the mobile plating system is stationary and in operation. The external vacuum pump may be mounted on a skid, and, in operation, the external vacuum pump couples with the vacuum chamber to assist with producing a desired pressure in the vacuum chamber.

Abstract: A carbon deposition chamber is provided with several advantages. The substrate and the heating filaments are cooled to a temperature to prevent carbonization by permitting a cooling fluid to be passed through tubing connected to these elements in a heat sink like manner. The substrate is permitted to rotate back-and-forth to permit more even deposition of carbon films onto the substrate. The heating filaments are permitted to expand and contract without breakage by permitting the electrode attached to one end of the filaments to move freely as the filaments change in length. The gas mixture used within the deposition process is expressed from tubing through three zones, which are each individually determined with needle valves.

Abstract: A thin film deposition apparatus and method are disclosed in this invention. The apparatus includes a depositing thin-film particle source, a beam-defining aperture between the particle source and the deposited substrate(s), and a substrate holder to rotate the substrate(s) around its center and move the center along a lateral path so that the substrate(s) can scan across the particle beam from one substrate edge to the other edge. The method includes a step of providing a vacuum chamber for containing a thin-film particle source for generating thin-film particles to deposit a thin-film on the substrates. The method further includes a step of containing a substrate holder in the vacuum chamber for holding a plurality of substrates having a thin-film deposition surface of each substrate facing the beam of thin-film particles.

Abstract: A thermal reflow processing system has a rotatable structure to which articles having a reflowable surface are attached. The structure is coupled to a drive motor which causes the structure to rotate at speeds which generate centripetal forces in excess of that of gravity. The system is equipped with at least one radiant heat source. As the articles are being subjected to a centripetal force, the surface is heated by the radiant heat source.

Abstract: A gas driven rotation apparatus includes a base member and a platter. The base member includes an upper surface and a mounting portion formed in the upper surface. The mounting portion includes an inner recess and an annular outer channel surrounding and spaced apart from the inner recess. A plurality of drive channels extend generally radially outwardly from the inner recess to the outer channel. The drive channels are substantially straight. A drive gas entrance passage extends through the base member and has an entrance opening in the inner recess. A drive gas exhaust passage extends through the base member and has an exhaust opening in the outer channel. The platter overlies the mounting portion. The drive channels are arranged and configured such that, when a drive gas flows through the drive channels, the drive gas causes the platter to rotate relative to the base member about an axis of rotation.

Abstract: In one aspect, the invention includes a method of improving uniformity of liquid deposition when a liquid is spin-coated over a non-circular substrate. The substrate is retained on a platform and spun. The circular platform includes a plurality of shaping members pivotally connected to the platform. The plurality of shaping members are biased by spinning the platform to form a platform surface with a circular periphery. In another aspect, the invention includes a substrate coating apparatus. Such apparatus comprises a non-circular substrate support configured to support a substrate with a planar surface and non-circular periphery. The apparatus further comprises a motor configured to spin the substrate support. A plurality of shaping members are pivotally connected with the substrate support and each shaping member has a curved outer side surface.

Abstract: A method of forming at least one layer on a substrate surface by vacuum deposition of particles onto the substrate surface, the method comprising the step of moving at least part of the substrate at high speed during vacuum deposition in a first direction parallel to the substrate surface. The method reduces the amount of macroparticles in a layer or layers deposited on the substrate, and controls the microstructure and crystallographic structure of the deposited layer or layers. Also disclosed are devices for performing the method, and resulting products, for example a hard disk thin film media.

Abstract: The present invention relates to temperature control elements, spindle assemblies, and wafer processing assemblies. According to one embodiment of the present invention, a wafer processing assembly is provided comprising a rotary spindle assembly, at least one liquid source, a controller, a wafer support, and a wafer processing bowl. The rotary spindle assembly comprises a rotary drive motor, a rotary spindle coupled to the rotary drive motor, a heat regulating element arranged about the rotary spindle, and a heat regulating flange secured to the rotary drive motor. The controller is coupled to the liquid source and a temperature sensor coupled to one or both of the heat regulating element and the heat regulating flange and is programmed to be responsive to a temperature signal generated by the temperature sensor.

Abstract: Method of thin layer preparation for a radionuclide source comprising the following steps:

Abstract: An apparatus for processing a microelectronic workpiece in a micro-environment is set forth. The apparatus includes a first chamber member having an interior chamber wall and a second chamber member having an interior chamber wall. The first and second chamber members are adapted for relative movement between a loading position in which the first and second chamber members are distal one another and a processing position in which the first and second chamber members are proximate one another to define a processing chamber. At least one workpiece support assembly is disposed between the first and second chamber members for supporting the microelectronic workpiece.

Abstract: The present invention relates to an improved apparatus for plasma treatment of golf ball surface. The improved apparatus comprises a cylindrical basket shaped rotating tumbler made from aluminum sheet metal that holds a plurality of golf balls within a sealed casing for surface preparation. A staggered hole pattern yields about 57% of open area in the tumbler surface to insure evacuation with minimum resistance. The holes are individually machined and have machined radiuses at each side of the sheet metal to allow for adequate coverage of a hard anodic coating which is necessary for protection of the sheet metal from the high intensity plasma. A two stage dry vacuum pumping system is used to reduce hydrocarbon impurities and improve print and paint adhesion.

Abstract: The invention describes an apparatus for chemical vapor deposition on substrates, a related method of deposition of epitaxial layers on the wafers and an assemblage for use therewith. In the apparatus of the invention, the wafers are placed directly on the surface of a heating filament. The apparatus of the invention may include a reaction chamber, a rotatable spindle, a plurality of rotatable electrodes mounted on the spindle for rotation together with the spindle and a heating filament in electrical contact with the rotatable electrodes. The heating filament may be rotated by rotating the rotatable electrodes, and heated by providing electric current to the electrodes. In one embodiment of the invention, heating filament may be detached from the rotatable electrodes to load or unload the wafers. Preferably, the heating filament is transported between a deposition position and a loading position. Alternatively, the heating filament is permanently mounted on the electrodes.

Abstract: A method and system for fabricating a device on a substrate with a process gas, such as with chemical vapor deposition. A reaction chamber and support chuck cooperate to form a low conductance configuration for axisymetric process gas flow over the substrate and to form a high conductance configuration for enhanced evacuation of residual process gas from the reaction chamber upon completion of the process. A dual conductance chuck has an indented region that aligns with the exhaust port of the reaction chamber to restrict process gas flow in the low conductance configuration, and that moves distal a showerhead and the exhaust port to provide reduced restriction of process gas flow for reaction chamber evacuation. The chuck includes thermal control for enhancing film deposition on the substrate and for reducing residual film deposition on the chuck. An evacuation opening in the housing provides independent evacuation of residual gas from the housing.

Abstract: A wafer chuck includes alignment members that allows a semiconductor wafer to be properly aligned on the chuck without using a separate alignment stage. The alignment members may be cams, for example, attached to arms of the wafer chuck. These members may assume an alignment position when a robot arm places the wafer on the chuck. In this position, they guide the wafer into a proper alignment position with respect to the chuck. During rotation at a particular rotational speed, the alignment members move away from the wafer to allow liquid etchant to flow over the entire edge region of the wafer. At still higher rotational speeds, the wafer is clamped into position to prevent it from flying off the chuck. A clamping cam or other device (such as the alignment member itself) may provide the clamping.

Abstract: A method of chemically growing a thin film in a gas phase using a rotary gaseous phase thin film growth apparatus which feeds a material gas by flowing down the gas from above to a surface of a rotating silicon semiconductor substrate to grow a thin film on a surface of said silicon semiconductor substrate in a method of chemically growing a thin film that a thin film-growing reaction is done wherein: monosilane gas is used as an effective component of the material gas to grow the thin film under a reduced pressure of from 2.7×102 to 6.7×103 Pa with the number of rotations of said silicon semiconductor substrate being from 500 to 2000 min−1 and at a reaction temperature of from 600° C. to 800° C.

Abstract: This invention describes improved apparatus and methods for spin-on deposition of semiconductor thin films. The improved apparatus provides for controlled temperature, pressure and gas compositions within the deposition chamber. The improved methods comprise dispensing of solutions containing thin film precursor via a moveable dispensing device and the careful regulation of the pattern of deposition of the precursor solution onto the wafer. The invention also comprises the careful regulation of deposition variables including dispensation time, wafer rpm, stop time and rates of wafer rotation. In one embodiment, the precursor solution is dispensed from the outer edge of the wafer toward the center. In alternative embodiments, processors regulate the movement of the dispensing arm and the precursor pump to provide an evenly dispensed layer of precursor solution. The invention also describes improved methods for evaporating solvents and curing thin films.

Abstract: An apparatus for forming a multicomponent thin film, such as a superconducting thin film, on a substrate includes a holder for holding at least one substrate and a deposition/reaction vessel. The deposition/reaction vessel has at least three zones, each zone being separated from adjacent zones by a wall. The zones include at least two deposition zones, where each deposition zone is configured and arranged to deposit a deposition material on the at least one substrate, and at least one reaction zone for reacting the deposition material with a reactant. The apparatus is configured and arranged to rotate the at least one substrate sequentially through the plurality of zones to form a thin film on the substrate. In some embodiments of the apparatus, the deposition/reaction vessel includes a same number of deposition zones and reaction zones which may be alternating deposition and reaction zones.

Abstract: The object of the present invention is to provide a ceramic substrate that can provide a substantially uniform temperature distribution to a surface of the ceramic substrate where a semiconductor wafer is treated. A ceramic substrate for a semiconductor-producing/examining device according to the present invention is a ceramic substrate having a conductor formed on a surface of the ceramic substrate or inside the ceramic substrate, wherein said substrate is containing oxygen and having a disc form, the diameter thereof exceeding 250 mm and a thickness thereof being 25 mm or less.

Abstract: A method and system for producing a thin film with highly uniform (or highly accurate custom graded) thickness on a flat or graded substrate (such as concave or convex optics), by sweeping the substrate across a vapor deposition source with controlled (and generally, time-varying) velocity. In preferred embodiments, the method includes the steps of measuring the source flux distribution (using a test piece that is held stationary while exposed to the source), calculating a set of predicted film thickness profiles, each film thickness profile assuming the measured flux distribution and a different one of a set of sweep velocity modulation recipes, and determining from the predicted film thickness profiles a sweep velocity modulation recipe which is adequate to achieve a predetermined thickness profile.

Abstract: An exemplary configurable vacuum system and method are provided for use in coating or plating that provides the capability to handle substrates of significantly different shapes and sizes. The configurable vacuum system includes a vacuum table assembly and a vacuum chamber. The vacuum table assembly may include a support frame, an insulated surface, a mechanical drive mounted to the support frame, an electrical feed through mounted to the support frame, a filament positioned above the insulated surface between a first filament conductor and a second filament conductor, a filament power connector electrically coupled to the first filament conductor through a first filament power contact pad of the filament power connector and to the second filament conductor through a second filament power contact pad of the filament power connector, and a platform operable to support the substrate.

Abstract: A semiconductor processing reactor includes a rotating susceptor having at least one substrate holder for supporting a substrate during processing. A susceptor motor is coupled to the rotating susceptor and a substrate holder motor is coupled to the substrate holder. The susceptor motor controls the rotation of the rotating susceptor and the substrate holder motor controls the rotation of the substrate holder. This allows the rotating susceptor to be rotated independent of the rotation of the substrate holder. Further, the substrate holder lifts the substrate above the rotating susceptor allowing automated loading and unloading of the substrate.

Abstract: Provided herein is a method of improving the planarity of a support plate of a susceptor for use during deposition of a film of material onto a substrate comprising the steps of reducing pressure in a hollow core of a shaft to a level below atmospheric pressure; and reducing a pressure in the deposition chamber to a level required for the deposition of the film of material onto the substrate, where the pressure in the hollow core of the shaft acts upon a lower surface of the support plate connected to the shaft and interfacing with the hollow core of the shaft and the pressure in the deposition chamber acts upon an upper surface of the support plate adapted to support the substrate thereby improving planarity. Also provided are a susceptor and a method of depositing a film onto a substrate affixed to the susceptor of the present invention.

Abstract: An apparatus for depositing a material by evaporation on a substrate having a large surface. The apparatus includes an enclosure in which are placed a number of material evaporation sources. It also includes a device for channeling or piping of vapors emitted by the sources toward the substrate during evaporation. This is formed by walls or covers which define compartments within the enclosure, each evaporation source being placed in a compartment. The apparatus can also utilize a device for moving the substrate in order to improve the uniformity of the deposit.

Abstract: A system for preventing contaminants and particulates from coming into contact with a back side of a workpiece as the workpiece is vacuum held on a chuck or robotic end effector.

Abstract: A reactor for coating flat substrates and particularly wafers is described which has a reaction vessel into which reaction gases can be introduced, and a substrate holder unit in which substrates are held in a holder such that the main surface of the substrates to be coated is oriented downward during the deposition operation and is aligned essentially in parallel to the flow direction of the reaction gases. The invention is characterized in that at least two spaces for substrates are provided on the substrate holder unit and in that the holder or holders is/are constructed in the manner of a template which has openings for the surfaces of the substrates to be coated.

Abstract: The present invention provides an apparatus for diffusing an impurity into a semiconductor wafer comprising: a diffusion furnace tubs which has a longitudinal center axis extending along a vertical direction and the diffusion tube having at least a gas injector vertically extending in a vicinity of an inner wall of the diffusion furnace tube and the gas injector having a single vertical alignment of a plurality of gas injection nozzles for blowing an impurity gas toward the longitudinal center axis in a first horizontal direction; and a wafer holder for holding at least one semiconductor wafer, the wafer holder being provided in the diffusion furnace tube so that the wafer holder rotates around a rotational axis extending along the vertical axis, whereby the at least one semiconductor wafer rotates around the rotational axis so as to keep a normal of the at least one semiconductor wafer directed in a diametrically outward direction from the rotational center axis.

Abstract: An exemplary mobile plating system and method are provided for performing a plating process using virtually any known or available deposition technology for coating or plating. The mobile plating system may include a vacuum chamber positioned in a mobile storage volume, an external vacuum pump, and a control module to control the operation of some or all of the operations of the external vacuum pump. The external vacuum pump is positioned in the mobile storage volume when the mobile plating system is in transit, and is positioned external to the mobile storage volume when the mobile plating system is stationary and in operation. The external vacuum pump may be mounted on a skid, and, in operation, the external vacuum pump couples with the vacuum chamber to assist with producing a desired pressure in the vacuum chamber.

Abstract: An epitaxial growth system is provided with a susceptor driving mechanism for rotationally driving a susceptor in a process chamber and this susceptor driving mechanism has a support shaft coupled to the susceptor, a driven portion, and an annular member with a plurality of permanent magnets arranged outside the driven portion. The driven portion is constructed in such structure that a coating for corrosion prevention consisting of a nickel coating, a chromium coating, and a metal oxide film formed by a passivation treatment with ozone is provided on a surface of a magnetic member.

Abstract: An apparatus of a reactor or processing chamber comprising a chamber having a resistive heater disposed within a volume of the chamber, including a stage having a surface area to support a substrate such as a wafer and a body including at least one heating element, a shaft coupled to the body, a plurality of temperature sensors coupled to the chamber, each configured to measure a temperature at separate points associated with the surface area of the stage, and a motor coupled to the shaft and configured to rotate the resistive heater about an axis through the shaft. In this manner, the temperature sensors may measure a temperature at separate points of the surface area of the stage. A method of rotating a shaft and measuring a plurality of temperatures over the surface area of the stage or over a wafer seated on the stage with the plurality of temperature sensors.

Abstract: A differentially pumped deposition system is described that includes a deposition source, such as a magnetron sputtering source, that is positioned in a first chamber. The deposition source generates deposition flux comprising neutral atoms and molecules. A shield that defines an aperture is positioned in the path of the deposition flux. The shield passes the deposition flux though the aperture and substantially blocks the deposition flux from propagating past the shield everywhere else. A substrate support is positioned in the second chamber adjacent to the shield. The pressure in the second chamber is lower than a pressure in the first chamber. A dual-scanning system scans the substrate support relative to the aperture with a first and a second motion, thereby improving uniformity of the deposited thin fill.

Abstract: An apparatus for processing a workpiece in a micro-environment includes a workpiece housing connected to a motor for rotation. The workpiece housing forms a substantially closed processing chamber where processing fluids are distributed across at least one face of the workpiece by centrifugal force generated during rotation of the housing. The housing may also be detached from the motor and moved to another location. The housing consequently serves as a processing chamber, as well as a storage or transport chamber.

Abstract: An article (e.g. a semiconductor wafer) is held in an article holder by means of a number of gas flows emitted from gas vortex chambers. Some of the gas flows act to cool an adjacent article portion more than the other gas flows. For example, some of the vortex chambers emit more gas per unit of time than the other chambers. More cooling is provided to those portions of the article which are heated more during processing. Greater temperature uniformity can be achieved.

Abstract: The present invention relates to a novel method and apparatus for chemical bath deposition or other plating or similar processes. The deposition may be performed in a rotating drum that has been provided with a mechanism for temperature elevation. A substrate or other suitable recipient bed upon which deposition is sought may be removably attached to the interior of the drum. Reactants or other materials may be added to the drum to deposit a film, layer, or uniform particles on the surface of the substrate.

Abstract: An apparatus for reduced-pressure gaseous phase epitaxial growth by suppressing contamination upon the machine parts constituting the rotary mechanical portion and suppressing contamination upon the semiconductor wafer by maintaining the pressure in the rotary mechanical portion to lie within a particular range, and a method of controlling the above apparatus.

Abstract: Thin films of single crystal-like materials are made by using flow-through ion beam deposition during specific substrate rotation around an axis in a clocking action. The substrate is quickly rotated to a selected deposition position, paused in the deposition position for ionized material to be deposited, then quickly rotated to the next selected deposition position. The clocking motion can be achieved by use of a lobed cam on the spindle with which the substrate is rotated or by stopping and starting a stepper motor at long and short intervals. Other symmetries can be programmed into the process, allowing virtually any oriented inorganic crystal to be grown on the substrate surface.

Abstract: A system and method for coating substrates. The coating process includes an improved capacity and uniformity through the addition of a second motion component in which the substrates move in a closed path. A major portion of the path is linear and the configuration of the coating machine is such that all substrates follow the same trajectory with respect to the machine during the coating process, resulting in a coating which is substantially the same for all substrates.

Abstract: A substrate processing apparatus is disclosed for heating a substrate by a heater through a susceptor in a state in which the substrate is placed on the susceptor, to process the substrate. The heater is divided into a plurality of respectively controlled zone heaters to form gaps therebetween, a center position of a gap of the gaps which is positioned closer to an end of the substrate than any other gap is located in a range from an inner side 10 mm to an outer side 6 mm in a radial direction of the substrate with respect to the end of the substrate.