Abstract: A mixing valve assembly 42 is communicated with a dedicated tank 51D, storing therein a compatibilizer D, via an inlet valve 43 and is also communicated with dedicated tanks 51A-51C via three injection valves, the tanks storing therein auxiliaries A-C respectively. A chemical formulation is prepared by selectively injecting any one(s) of four chemical agents into the mixing valve assembly 42 by way of on-off control of the inlet valve 43 and the injection valves and blending together the injected chemical agents. Then, the chemical formulation is pumped into SCF by a high-pressure pump 45 such that the SCF and the chemical formulation are mixed together to form a process fluid. Thus, the number of components of a high-pressure portion can be reduced to achieve a cost reduction of an apparatus. Furthermore, a pipe line for pumping the chemical agents is simplified.

Abstract: A washer system which includes a first reservoir containing a freezable washer liquid and having a drain port therein. The drain port is in fluid communication with the freezable washer liquid when the first reservoir is in at least a full state. The washer system also includes a temperature sensor for measuring a critical temperature corresponding to approximately a freezing temperature of the freezable washer liquid, a drain plug sealingly communicating with the drain port, and an electrical control unit in operative communication with the temperature sensor and the drain plug. The electrical control unit controls the drain plug to drain the liquid from the first reservoir in response to the critical temperature.

Abstract: A cleaning device for internal combustion engine by way of suction force generated at the air-inlet tube of the engine is disclosed. The tapered air passage accelerates the air stream to produce a suction force, or a moveable or adjustable valve device to change the surface area of the air passage so as to control the effect of vacuum, and the cleaning solution is sucked into the air-inlet tube to clean away the accumulated carbon and debris in the valves or the internal combustion engine.

Abstract: Disclosed is a dishwasher having an improved water softener. The present invention includes a housing, a tub in the housing to hold tableware, an injector assembly for injecting water on the tableware in the tub, and a water softener softening the water supplied to the injector assembly, the water softener including a first container holding an ion-exchange resin for removing heavy metal and metal ions from the water, a second container holding a predetermined amount of salt and salt water to supply the salt water to the first container to recycle the ion-exchange resin that is saturated, a float installed in the second container, and a sensor provided to the second container to sense a concentration of the salt water according to a distance from the float.

Abstract: The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a gas-liquid mixture by mixing a liquid and a pressurized gas, to discharge the gas-liquid mixture to a substrate at high speeds. The mixture process is conducted in an open space out of the nozzle, and change in the supply pressure of the gas does not affect the supply of the liquid. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the gas-liquid mixture, whereby the quality of the process is improved.

Abstract: A cleaning processing apparatus, which is one embodiment of a liquid processing apparatus for performing a liquid processing by supplying a predetermined process liquid to a target object to be processed such as a semiconductor wafer while rotating the target object, comprises a rotor for holding wafers W, a slidable process section for housing the rotor, and a cleaning liquid spurting nozzle for supplying a predetermined cleaning liquid to the wafers W. A housing for housing the slidable process section is of a hermetic structure so as to be substantially shielded from the outside.

Abstract: A hard floor surface cleaning apparatus includes an aerator, a rotating scrub medium engaging the hard floor surface, a fluid conveyor, and a fluid recovery device. The aerator is configured to produce a foam-like aerated cleaning liquid from a cleaning liquid. The fluid conveyor is coupled to the aerator and is configured to deliver the aerated cleaning liquid onto the scrub medium. The fluid recovery device is configured to remove soiled solution from the hard floor surface.

Abstract: The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a gas-liquid mixture by mixing a liquid and a pressurized gas, to discharge the gas-liquid mixture to a substrate at high speeds. The mixture process is conducted in an open space out of the nozzle, and change in the supply pressure of the gas does not affect the supply of the liquid. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the gas-liquid mixture, whereby the quality of the process is improved.

Abstract: A wafer cleaning solution that includes a solution of NH4OH, a carboxylic acid based chelating agent, H2O, and an oxidizer.

Abstract: An apparatus for supplying a mixture of a treatment liquid and ozone for treatment of a surface of a workpiece, and a corresponding method are set forth. The preferred embodiment of the apparatus comprises a liquid supply line that is used to provide fluid communication between a reservoir containing the treatment liquid and a treatment chamber housing the workpiece. A heater is disposed to heat the workpiece, either directly or indirectly. Preferably, the workpiece is heated by heating the treatment liquid that is supplied to the workpiece. One or more nozzles accept the treatment liquid from the liquid supply line and spray it onto the surface of the workpiece while an ozone generator provides ozone into an environment containing the workpiece.

Abstract: Disclosed is a substrate cleaning method for removing particles from a substrate includes a first step of adjusting the concentration of dissolved nitrogen in pure water, so as to be less than or equal to the concentration of dissolved nitrogen in equilibrium with the atmosphere (about 16 ppm), in a supply line that supplies the pure water, and a second step of cleaning a substrate by supplying a cleaning tank with a cleaning solution produced by mixing at least hydrogen peroxide with the pure water adjusted at the first step, and applying an ultrasonic wave to the cleaning solution in which the substrate is immersed.

Abstract: Washing items are washed simultaneously with softening washing water comprising alkali metal ion and at least one of carbonate ion and bicarbonate ion. The washing water before being softened is obtained by electrolyzing an aqueous solution of sodium hydrogencarbonate having a pH of 9.5 or more and an electric conductivity of 150 mS/m or more. The softened washing water has a total hardness of 40 ppm or less.

Abstract: An apparatus for supplying a mixture of a treatment liquid and ozone for treatment of a surface of a workpiece, and a corresponding method are set forth. The preferred embodiment of the apparatus comprises a liquid supply line that is used to provide fluid communication between a reservoir containing the treatment liquid and a treatment chamber housing the workpiece. A heater is disposed to heat the workpiece, either directly or indirectly. Preferably, the workpiece is heated by heating the treatment liquid that is supplied to the workpiece. One or more nozzles accept the treatment liquid from the liquid supply line and spray it onto the surface of the workpiece while an ozone generator provides ozone into an environment containing the workpiece.

Abstract: In the present invention a car wash system is provided with a plurality of additive supplies, often referred to as solutions in the car wash industry, each supply feeding to a manifold including a common meter that has a value associated with each of the separate additive supplies for controlling flow from each of the supplies. A single variable speed pump under control of the computer pumps water through the meter and against the vehicle to be washed. The flow of the water through the meter aspirates additives from the supplies that mix with the water stream in the meter. Opening and closing of the valves to admit one or more of the additives to the water stream is responsive to a pre selected car wash cycle that is controllable by a controller.

Abstract: An apparatus and method is described for cleaning semiconductor wafers using a dilute aqueous solution including at least 80% deionized water, sulfuric acid, an oxidant such as hydrogen peroxide, and a small amount of hydrofluoric acid (HF), preferably in the range of about 5 ppm to about 12 ppm. The automated system mixes the water, sulfuric acid, hydrogen peroxide, and HF to form a cleaning solution having a target HF concentration within the preferred range, for example at 8 ppm. Subsequently, the system maintains the HF concentration at least within about 0.5 ppm to about 1 ppm of the target HF concentration. Thus the system allows effective and predictable cleaning of semiconductor wafers while minimizing damage to metal features, and minimizing cost and waste disposal impacts.

Abstract: A portable-type cleaning device for internal combustion engine comprising a container containing a cleaning solution and a guiding tube connected to the container and the internal combustion engine, and an opening being provided at the top end of the container for the insertion of the guiding tube, wherein, the middle section of the guiding tube is provided with a pressurizing hole for the entry of air, and the height of the pressurizing hole is at least higher than that of the level of the cleaning solution within the container. The other end of the guiding tube is directly inserted into the air-inlet tube of the internal combustion engine. The vacuum suction created by igniting the internal combustion engine drives the cleaning solution and air to enter respectively through the bottom end and the pressurizing hole of the tube. At the same time, the air and the cleaning solution are mixed forming into bubbles or atomized, entering the internal combustion engine.

Abstract: The prevent invention provides a substrate processing apparatus and a substrate processing method which can process hydrophobic wafers with a fluid mixing nozzle.

Abstract: A method and apparatus for removing contaminants from the surface of a metallic article comprises a continuously flowing acid bath whose level of acidity and temperature is controlled and over which a purging gas flows to continuously remove hazardous gases generated during the removal of contaminants from the metallic article.

Abstract: The surface of a semiconductor wafer is cleaned simultaneously using diluted hydrofluoric acid and electrolytic ionized water. The electrolytic ionized water is produced using an electrolyte supplied into an intermediate cell of a 3-cell electrolyzer. The 3-cell electrolyzer has an anode cell, the intermediate cell, and a cathode cell partitioned from one another by ion exchange membranes. After deionized water is supplied into the anode cell and the cathode cell and the intermediate cell is filled with an electrolytic aqueous solution, electrolysis is carried out to produce electrolytic ionized water. The electrolytic ionized water and the hydrofluoric acid solution are then supplied to one or more semiconductor wafer cleaning apparatus. The simultaneous use of the electrolytic ionized water and the diluted hydrofluoric acid offers an improvement in removing contaminants from the surface of the wafer without damaging an insulating layer or a metal layer exposed at the surface of the semiconductor wafer.

Abstract: An air handling system is equipped with a system for cleaning the air handling evaporator core in situ. Water is distributed through an intake manifold consisting of a plurality valve or other flow control device. Here, the water picks up treating agents, such as microbicides and cleaning agents. In one of the valves or other flow control devices, the water does not pick up a treating agent, and is used for rinsing. The treated or untreated water flows through a connector to an outlet manifold for contact with an evaporator core of an air handler.

Abstract: According to method embodiments of the present invention, a method for cleaning a microelectronic substrate includes placing the substrate in a pressure chamber. A process fluid including dense phase CO2 is circulated through the chamber such that the process fluid contacts the substrate. The phase of the CO2 is cyclically modulated during at least a portion of the step of circulating the process fluid.

Abstract: Described are cleaning methods and apparatus that minimize the volume of hazardous materials used and created when cleaning components, and further to minimize the possibility of cross-contamination between components from different deposition chambers. Components to be cleaned are stored within or supported by a dedicated cassette before they are placed in a receptacle of cleaning liquid. The cassette displaces a significant percentage of the receptacle's volume; consequently, only a relatively small volume of cleaning liquid is needed to fully submerge the component. In typical embodiments, the combined cassette and component displace a volume of liquid that is greater than the volume of liquid used to clean the component. One embodiment of the invention reduces the requisite volume of cleaning solution using a number of liquid-displacing elements (e.g., balls) contained within a cleaning receptacle.

Abstract: A method of cleaning semiconductor wafers before the epitaxial deposition comprising (A) etching silicon wafers with HF; (B) rinsing the etched wafers with ozonated ultrapure water; (C) treating the rinsed wafers with dilute SC1; (D) rinsing the treated wafers; (E) treating the wafers with dilute HF; (F) rinsing the wafers with DI water; (G) drying the wafers with nitrogen and a trace amount of IPA; wherein steps (E) through (G) are conducted in a single dryer chamber and wafers are not removed from the chamber between steps. A system comprising a single tank adapted for cleaning, etching, rinsing, and drying the wafers has means to inject HF into a DI water stream.

Abstract: A small-sized cleaning and drying apparatus is provided. Without generating particles, hydrogen gas, etc., the apparatus easily generates an ozone water to form an oxidation film on an object to be processed. The apparatus includes a cleaning part 1 for washing semiconductor wafers W and a drying part 2 for drying the wafers W. The cleaning part 1 is formed by a processing bath 10 storing a chemical liquid or a rinsing liquid. The processing bath 10 is communicated with a chemical source 17 and a pure water source 15 through a rinsing liquid pipeline 14 interposing an ozone water generating unit 21. After completing both chemical treatment and rinsing, it is possible to form the oxidation Elms on respective surfaces of the wafers W and dry them.

Abstract: A production method of an electronic part comprising a step o working a substrate having formed thereon a metal thin-film conductor using water, wherein said water satisfies the relations 3.5≦pH≦6.5 and DO≦0.5 pH2−6.5 pH+22 [wherein DO represents a dissolved oxygen amount (unit ppm)].

Abstract: A method of cleaning substrates is provided. Prior to, during or prior to and during a cleaning process, fluid is applied to a substrate surface to form a fluid film thereon. Ice crystals are introduced into the fluid film on the substrate surface. The ice crystals have a temperature that is lower than the temperature of the fluid such that the fluid changes the ice crystals into a gaseous state to form a pulse generated in the fluid film. The depth of penetration of the ice crystals into the fluid film is controlled such that the ice crystals do not strike the substrate surface. The substrate surface is cleaned with the pulse.

Abstract: A system for processing substrates within a chamber and for cleaning accumulated material from chamber components is provided. The system includes a reactive species generator adapted to generate a reactive gas species for chemically etching accumulated material from chamber components, and a processing chamber having at least one component with a mirror polished surface which is exposed to the reactive species. Preferably to have the greatest impact on chamber cleaning efficiency, the mirror polished surface is a surface of a component such as a gas distribution plate or a backing plate, and/or is a surface of a plurality of smaller components (e.g., chamber wall liners, a gas conductance line, etc.) so as to constitute a large percentage of the surface area exposed to the reactive species. Most preferably all bare aluminum surfaces which the reactive species contacts are mirror polished.

Abstract: When the hatch of a substrate washing chamber 5 is opened to place a substrate therein, valves V1, V2, V3, V4 and V6 are closed, only a valve V5 being opened. Thus, gaseous CO2 is supplied into the substrate washing chamber 5 to perform a chamber purge for preventing surrounding air components from straying in. As the hatch of the substrate washing chamber 5 is closed, the valve V6 is further closed to form a vent line for the substrate washing chamber 5. Thus, the gas residing within the substrate washing chamber 5 and the conduits is expelled by CO2 gas, into the surrounding air, thereby performing a chamber purge to prevent any unwanted surrounding air components from being left. Thereafter, super critical CO2 is used to wash the substrate.

Abstract: A pump is supported on a housing and has an inlet port coupled to a lubricant supply and an outlet port coupled to a tube outlet opening for delivering a predetermined amount of the lubricant during an activated cycle of the pump. An actuator, when triggered, operates in an actuated state for a predetermined duration during which time the pump is activated for one cycle and delivers a predetermined amount of the lubricant to the tube outlet opening. A switch is independently selectable for triggering the actuator to activate only the active cycle of the pump. The actuator may be a spring-biased solenoid or a timer circuit with a relay. The pump may be a piston-diaphragm type or any one of various motor driven types. The pump is activated for about 1 second, without also activating a cleaning cycle or a purging cycle and delivers ⅛ to ½ cc of a lubricant comprising about 90% by volume of a pharmaceutical grade mineral oil and about 10% by volume of NNL-690.

Abstract: An apparatus and method is described for cleaning semiconductor wafers using a dilute aqueous solution including at least 80% deionized water, sulfuric acid, an oxidant such as hydrogen peroxide, and a small amount of hydrofluoric acid (HF), preferably in the range of about 5 ppm to about 12 ppm. The automated system mixes the water, sulfuric acid, hydrogen peroxide, and HF to form a cleaning solution having a target HF concentration within the preferred range, for example at 8 ppm. Subsequently, the system maintains the HF concentration at least within about 0.5 ppm to about 1 ppm of the target HF concentration. Thus the system allows effective and predictable cleaning of semiconductor wafers while minimizing damage to metal features, and minimizing cost and waste disposal impacts.

Abstract: A high-pressure processing apparatus for removing unnecessary matters on objects to be processed by bringing a high-pressure fluid and a chemical liquid other than the high-pressure fluid into contact with the objects to be processed in a pressurized state is provided with a plurality of high-pressure processing chambers, a common high-pressure fluid supply unit for supplying the high-pressure fluid to each one of the high-pressure processing chambers, a common chemical liquid supply unit for supplying the chemical liquid to the each high-pressure processing chambers, and a separating unit for separating gaseous components from a mixture of the high-pressure fluid and the chemical liquid discharged from the high-pressure processing chambers after the objects are processed.

Abstract: A concentration control apparatus of a liquid chemical is provided, which is capable of real-time concentration/composition control of a liquid chemical without sampling the same.

Abstract: Silicon wafers are treated with chemicals during the manufacture of integrated circuits according to the method of the invnention in the apparatus of the invention which comprises a process tank for cleaning, rinsing, and/or drying silicon wafers; a first chemical supply vessel suitable for being pressurized, fluidly coupled to the process tank; a chemical flow sensor for electronically monitoring the flow rate of chemical from the first hemical supply vessel; a first chemical flow metering valve for electronically controlling the flow rate of chemical from the first chemical supply vessel; a supply of hot DI water fluidly coupled to the process tank; a hot water metering valve for electronically controlling the flow rate of hot DI water from the supply of the hot DI water; a supply of cold DI water fluidly coupled to the process tank; a cold water metering means for electronically controlling the flow rate of cold DI water from the supply of cold DI water; water flow sensor means for electronically monitorin

Abstract: A semiconductor processing system has a liquid chemical metering and delivery system including a process tank and a metering vessel. Fluid level detectors detect the fluid level in the process tank and metering vessel. A two stage fill valve fills the metering vessel from bottom to top. A dispense valve dispenses the metered contents of the vessel into a process tank via gravity, to form a chemical solution in the process tank, with high mixing accuracy. The volumes of the metering vessel and process tank and the inflow and outflow rates are set to provide 100% up time to a process chamber which uses the chemical solution to process semiconductor wafers or other flat media.

Abstract: A vehicle washing system, particularly adapted for concrete mixer trucks and bulk material tank trucks, includes spaced apart arches having opposed legs and transverse members with arrays of spray nozzles mounted thereon. Longitudinal spray manifolds are mounted midway on the transverse members of each arch to provide suitable washing of rotatable mixer drums and tank trucks. A driver operated control panel is mounted spaced from one of the arches and is provided with selector switches for actuation in accordance with the type of vehicle to be washed for actuating a valve to cause washing fluid and rinse fluid to flow to the respective arches. Washing fluid is conducted to one of the arches by way of a venturi mechanism which inducts a mixture of an acid solution and a surfactant solution into a pressure water stream prior to conducting the washing fluid to the arch.

Abstract: A sulfuric acid recycle apparatus capable of concentrating sulfuric acid, which is lowered in concentration upon completion of a wafer cleaning process, to a level to be recycled is provided. The sulfuric acid recycle apparatus for recycling sulfuric acid in a wafer cleaning fluid prepared by mixing sulfuric acid and hydrogen peroxide solution comprises a reaction bath having two openings formed of at least an introduction port and a discharge port for obtaining concentrated sulfuric acid by concentrating sulfuric acid in the wafer cleaning waste fluid introduced from the introduction port upon completion of a wafer cleaning process, then discharging the concentrated sulfuric acid from the discharge port, a wafer processing bath for processing wafers, and a supply unit for supplying the concentrated sulfuric acid to the wafer processing bath.

Abstract: Systems and methods for processing electronic components having a vessel for holding electronic components and a carrier supply system operatively associated with the vessel for supplying a carrier stream to the vessel. An injection system is in fluid communication with the carrier supply system for introducing a process solution into the carrier supply system and a processor is operatively associated with the injection system. The processor generates data for process solution volume and injection pressure associated with the injection system and carrier stream flow rate associated with the carrier supply system as a function of time. A process solution injection rate as a function of process solution volume, injection pressure, and carrier stream flow rate is determined. Values for the injection pressure and the carrier stream flow rate for a predetermined process solution injection rate are the determined.

Abstract: A method for treating objects. The method includes supplying a fluid comprising a liquid from a fluid source through an angular direction into a manifold; and injecting a treatment chemical into the fluid at the manifold. The method also includes transferring the fluid comprising the treatment chemical to a treatment vessel through a distribution member. The distribution member distributes the fluid through a plurality of openings. Each of the openings is spatially disposed around the member such that the fluid exits through each of the openings where a lateral velocity component of the fluid through each opening is substantially equal to each other.

Abstract: A machine for cleaning containers such as flat media carriers has inside and outside arrays of nozzles arranged to spray a cleaning solution onto containers supported on a spinning rotor in a chamber. The cleaning solution, a mixture of water and a detergent or surfactant, is prepared by drawing out surfactant directly from a surfactant bulk storage vessel by means of a metering pump. The flow rate of the water is measured by a flow meter and in combination with the metering pump, a proper amount of surfactant is injected into the water line to produce a mixture with a desired surfactant concentration for removing contaminants. The mixture is injected into the water line at a mixing control valve to ensure that the water and surfactant are thoroughly mixed before being injected into the media carrier.

Abstract: A cleaning unit (A) includes a movable cart (20) which carries a cleaning system for cleaning baked-on residues from walls (10) of a sterilizer chamber (12). Alkaline and acid cleaning solutions (180, 182), for removing organic and inorganic residues, respectively, from the chamber, are stored in a multi-compartment container carried by the cart and having two storage compartments (52, 54). The alkaline and acid solutions are sequentially sprayed over the chamber walls and returned to their respective compartments. After cleaning is complete, a wall (200) which separates the two compartments is punctured. The two cleaning fluids are thereby mixed together to form a neutral or near neutral solution which is disposable in a sanitary sewer system without further treatment.

Abstract: A semiconductor wafer washing system can execute a method in which the washing solution is quickly changed over and over again without the need to alter the structure of the system. The wafer washing system includes a washing solution supply section in which a plurality of chemicals are stored separately, and from which selected ones of the chemicals can be supplied in a predetermined ratio into a washing tank. A circulation section includes circulation piping connected to the washing tank for circulating the washing solution to and from the tank. A discharge section selectively discharges residual chemicals or washing solution from the washing solution supply section, the washing tank and the circulation section. A controller controls the flow of chemicals and washing solution in the washing solution supply section, the circulation section and the discharge section, respectively.

Abstract: An apparatus and a method for cleaning wafers by a wet bench technique without incurring ammonia vapor damages to the wafer surface are provided. The apparatus of a wet cleaning tank consists of a tank body for holding a quantity of a cleaning solution therein; a conduit mounted through and vertical to a bottom wall of the tank body for feeding an ammonia-containing solution into the tank body through an outlet; and a cup-shaped container mounted in an upside-down position over the outlet of the conduit for blocking ammonia vapor generated by the ammonia-containing solution from reaching an upper cavity of the tank body.

Abstract: A urine bag cleaning manifold capable of pre-mixing a cleaning solution and water for washing one or more urine bags. The bags are then rinsed and allowed to dry. The urine bag cleaning manifold is adapted for attaching to a bathroom sink faucet, bathtub faucet and other faucets for circulating the warm water from the faucet and the cleaning solution therethrough. The cleaning manifold includes a flexible inlet tube having a first end and a second end. The first end of the inlet tube is adapted for connection to the faucet. The second end of the inlet tube is attached to an inlet of a water inlet valve. An outlet of the water inlet valve is attached to a first end of an upstream mixing section. The upstream mixing section is part of a hollow manifold body. The hollow manifold body also includes a downstream discharge section. A second end of the mixing section is attached to a first end of the discharge section. A cleaning solution container is mounted on top of a cleaning solution valve.

Abstract: In the art of wet-cleaning a substrate by etching with a cleaning solution prepared by dissolving hydrofluoric acid as an active component in water, using the process of measuring the concentration of a predetermined component regularly and then replenishing the cleaning solution with a component for correcting the concentration at need on the basis of the result of measurement on the concentration in case of cleaning the substrate with an aqueous solution of ammonium fluoride as the cleaning solution while controlling air in a cleaning draft at an exhaust rate within a predetermined range.

Abstract: Arrangement and method for detecting the end of life of an aqueous bath utilized in semiconductor processing, the bath containing water, an amount of hydrogen peroxide and an amount of a predetermined chemical species, which is either an acid or a base, in accordance with the following steps: adding a predetermined additional amount of the hydrogen peroxide and/or the predetermined chemical species at predetermined time intervals, measuring at least one parameter of the aqueous bath, thereby obtaining a measured parameter value, the at least one parameter being selected from a set of parameters including bath pH and bath conductivity; reading a predicted value of said at least one parameter from a memory storing a curve of predicted values of said at least one parameter as a function of time, said curve depending on said predetermined additional amount of said hydrogen peroxide and/or said predetermined chemical species, and depending on said predetermined time intervals; establishing the end of life of said

Abstract: A device for supplying a mixture of fluids (cleaning agent and air) to a color bank in a paint finishing system for the purpose of removing paint residue, thereby flushing out the system. The device, may be supplied with any number and types of fluids. The device comprises valves for the purpose of activating fluid flow, an overall shape that allows for easing mounting in an existing color changer rack system or as an independent device, and a screen plate located in the path of the fluids, for the purpose of mixing the fluids. A screen plate and discharge port is configured into the body of the device to deliver the cleaning fluid mixture in a turbulent swirling movement to the next section of the color bank or to the next item to be cleaned. A method of cleaning a color bank using the device is disclosed.

Abstract: An improved chemical wash is used to cleanse the interior of an open Cathode Ray Tube (“CRT”) funnel before a coating of a carbon material is applied. The traditional ammonium bifloride wash for CRT funnels can be replaced with an aqueous solution of trisodium phosphate (“TSP”). The TSP solution is preferably sprayed under pressure into the open CRT funnels to cleanse each funnel before the interior coating of carbon material is applied. The TSP solution cleanses the funnels as well as the ammonium bifloride wash previously used, but does not tend to clog the wash sprayers. Moreover, the TSP solution does not need to be treated before it is released as waste and costs significantly less that the previous ammonium bifloride wash.

Abstract: A substrate is processed with a first process solution prepared by mixing sulfuric acid with a hydrogen peroxide solution, followed by processing the substrate with a second process solution. After the substrate is processed with the first process solution, the supply of sulfuric acid is stopped, with the hydrogen peroxide alone being supplied to the substrate. Then, the supply of the hydrogen peroxide solution is stopped, and the substrate is rinsed with a second process solution. The particular processing makes it possible to prevent the second process solution from reacting with sulfuric acid.

Abstract: A washing apparatus and a washing method, which further improve a washing effect and enable highly clean washing with a small amount of chemical. Also, it is an object of the invention to provide a washing apparatus of high throughput involving rapid switching of various chemicals of high responsibility and capable of performing a series of washing operations at high speed. The washing apparatus comprises undiluted cleaning liquid injection means for injecting an undiluted solution or undiluted gas of a cleaning liquid into a ultrapure water channel to make a cleaning liquid of a desired concentration, cleaning liquid supplying means connected to the super demineralized water channel for simultaneously supplying front and rear surface of a substrate with a cleaning liquid adjusted to a desired concentration or a ultrapure water, means for superposing ultrasonic wave or high frequency sound waves of 0.

Abstract: A substrate is processed with a first process solution prepared by mixing sulfuric acid with a hydrogen peroxide solution, followed by processing the substrate with a second process solution. After the substrate is processed with the first process solution, the supply of sulfuric acid is stopped, with the hydrogen peroxide alone being supplied to the substrate. Then, the supply of the hydrogen peroxide solution is stopped, and the substrate is rinsed with a second process solution. The particular processing makes it possible to prevent the second process solution from reacting with sulfuric acid.