Abstract: A vehicle wash system is shown and described which is particularly suitable for use in in-bay washing devices, i.e., tunnels or supporting frameworks wherein vehicles are parked and washed while they are stationary. Chemical lines supply chemicals (such as detergents, waxes, etc.) to water lines, and the chemicals and water are mixed in downstream mixing modules. The mixing modules are preferably provided in the form of vessels having enlarged flow areas, and may contain baffles or other turbulence generators therein. The chemical/water mixtures leave the mixing modules in post-mix lines to which gas supply lines may be connected for the purpose of generating foam, which is then delivered in the wash bay from a downstream delivery system. The downstream foam pressure has little or no effect on upstream mixing of chemicals and water, and thus foam having highly uniform properties is generated.

Abstract: Cleaning liquid supply nozzles 32 are provided within a processing tank 30 for cleaning semiconductor wafers W. A distilled water source 31 and the cleaning liquid supply nozzles 32 are connected via a distilled water supply pipeline 33 and a chemical supply tank 36 and the cleaning liquid supply nozzles 32 are connected via a chemical supply pipeline 35. A flow-rate adjustment valve 37 is provided in the distilled water supply pipeline 33, and the supply of distilled water from the distilled water supply pipeline 33 to the processing tank 30 and the supply of a chemical from the chemical supply pipeline 35 to the processing tank 30 are switched by a switching valve 34.

Abstract: The concentrations of predetermined components of a chemical solution 5 present in a cleaning bath 1 are measured by a measurement unit 11. From the results are calculated the concentrations of various chemical species. From the concentrations calculated and an experimentally obtained rate equation is calculated the treating ability of the chemical solution 5 before supplementation of said components. Then, the treating abilities of chemical solution when the components and ultrapure water are supplemented, are calculated for various cases of amounts supplemented. From these cases is determined a case of amounts supplemented in which the treating ability of chemical solution is maintained at a required level and the amounts supplemented are minimized. Next, the components and ultrapure water are supplemented in respective determined amounts via feeding pumps 21, 23 and 25.

Abstract: In a method and an apparatus for automatically cleaning at least the cooking chamber of a cooking device upon use of a fluid, the fluid is selected from a first fluid comprising cleaning agent, rinse agent, decalcification agent, water and/or the like, and/or from a second fluid that is acquired from the third fluid discharging from the cooking chamber during cleaning on the basis of at least partial cleaning thereof. At least one spray head is provided to which the first fluid from at least a first reservoir and/or the second fluid can be supplied via a line system from a processing unit connected to the discharge conduit of the cooking chamber. The processing unit has at least a second reservoir, a cleaning unit, and a pump unit.

Abstract: Method and apparatus for cleaning and/or drying objects that may have been wetted or contaminated in a manufacturing process. The objects are submerged in a rinse liquid in an enclosed chamber, and aerosol particles from a selected liquid are introduced into the chamber above the rinse liquid surface, forming a thin film on this surface. As the rinse liquid is slowly drained, some aerosol particles settle onto the exposed surfaces of the objects, and displace and remove rinse liquid residues from the exposed surfaces by a “chemical squeegeeing” effect. Surface contaminants are also removed by this process. Chamber pressure is maintained at or near the external environment pressure as the rinse liquid is drained from the chamber. Inert gas flow is employed to provide aerosol particles of smaller size and/or with greater dispersion within the chamber. Continuous filtering and shunt filtering are employed to remove most contaminants from the selected liquid.

Abstract: Cleaning liquid supply nozzles 32 are provided within a processing tank 30 for cleaning semiconductor wafers W. A distilled water source 31 and the cleaning liquid supply nozzles 32 are connected via a distilled water supply pipeline 33 and a chemical supply tank 36 and the cleaning liquid supply nozzles 32 are connected via a chemical supply pipeline 35. A flow-rate adjustment valve 37 is provided in the distilled water supply pipeline 33, and the supply of distilled water from the distilled water supply pipeline 33 to the processing tank 30 and the supply of a chemical from the chemical supply pipeline 35 to the processing tank 30 are switched by a switching valve 34.

Abstract: A processing tank has at least one fluid distribution device for introducing a treatment fluid. The fluid distribution device has at least one porous hollow rod, at least one porous plate, at least one capillary plate, or at least one single-ply or multi-ply fabric.

Abstract: Method and apparatus for cleaning semiconductor devices and other workpieces using an aqueous rinse solution which is de-oxygenated by passing the aqueous rinse solution and a carrier gas through an osmotic membrane degasifier. A cleaning chamber is also disclosed for carrying out the cleaning method.

Abstract: In a cleaning method and a cleaning apparatus of a silicon substrate, after wet cleaning or etching of the substrate having a silicon surface is carried out, and during or after a pure water rinse of the substrate, an oxide film with a thickness of 10 to 30 Å is formed on the silicon surface by rinsing the substrate by pure water added with an oxidizer, and then the substrate is dried. Since drying is carried out after the oxide film is formed on the silicon surface, the occurrence of a water mark can be prevented.

Abstract: An industrial sponge device and a method of manufacturing the same. The sponge is made from a polyvinyl acetal material with a process in which the pores are formed by gas to provide an open pore structure having no fibrils. Additionally, the sponge is purified by an extracting process which includes alternating exposure of the partially cross-linked sponge to solutions of high pH and low pH. The sponge is sterilized by electron beam radiation to destroy micro organisms that can cause contamination of the final product. The resulting sponge material is formed into an industrial sponge having a cylindrical body and a plurality of projections extending from the body. The projections are tapered truncated cones having a cross-sectional radius that decreases with distance from the body. The extracting process permits residual amounts of calcium, zinc, and other elements to be 2 ppm or less preferably 1 ppm or less.

Abstract: Metal surfaces are contacted with a solution of a process bath (1), for example a phosphating or pickling solution, which comprises several components in aqueous solution, the composition of the process bath (1) being maintained within a given range by addition of solutions or gases, in particular air. The profitability is improved considerably if the solution of the process bath (1) is circulated via a first line (2) and a circulating pump (3) and the solution to be added and/or the gas to be added is fed to the process bath where, as a consequence of the ending of the line (2), vigorous thorough mixing prevails, or if the solution to be added or the gas to be added is fed to a suction pump (4), the solution to be added or the gas to be added mixing with the circulated solution.