Abstract: A cleaning apparatus for a semiconductor wafer comprising: a double container including an inner container with an upper opening for accommodating a substrate to be cleaned and an outer container having an airtight space accommodating the inner container therein, the inner container being communicated to the outer container through the upper opening; a cleaning liquid supply conduit for supplying a cleaning liquid into the inner container; an inner container drain conduit for draining the cleaning liquid from the inner container; a solvent-containing gas supply conduit for supplying a solvent-containing gas into the inner container for drying the substrate; a solvent-resolving gas supply conduit for supplying a solvent-resolving gas into the inner container for resolving a solvent component attached on the substrate; an exhaust pipe for exhausting the gases from the double container, and an outer container drain conduit for draining the liquid spilled from the inner container to the outer container.

Abstract: A wafer drying method includes submerging a wafer in a cleaning solution in a dry chamber. An organic liquid vapor from an organic liquid is supplied into the dry chamber at a first volumetric supply rate to form an organic liquid layer on a surface of the cleaning solution, the organic liquid layer having at least a prescribed concentration of the organic liquid. The organic liquid vapor is supplied into the dry chamber at a second volumetric supply rate that is lower than the first volumetric supply rate. During and/or following the supplying of the organic liquid vapor into the dry chamber, at least a portion of the wafer is removed from the cleaning solution through the organic liquid layer.

Abstract: A soft spray nozzle discharging a cleaning mist is vertically directed and fixed to an arm. A rinse nozzle discharging rinsing deionized water for suppressing obstruction is vertically fixed to the arm at a prescribed distance from the soft spray nozzle. During cleaning, it follows that both nozzles discharge detergents while keeping relative layout relation. Therefore, the discharged cleaning mist and rinsing deionized water do not interfere with each other before reaching the substrate but the used detergents are entirely horizontally splashed and recovered in a cup. Thus, the cleaning mist is prevented from scattering and adhering to the periphery.

Abstract: A cleaning device with a toggle serves for increasing ozone dissolution in water for cleaning vegetables and fruits. The cleaning device is placed in a washing barrel. The cleaning device comprises a toggle being a circular body which is installed with at least one water circulation hole; and an air-stone disk formed by a bottom disk and a plurality of air stones; a lateral side of the bottom disk being connected to an air inlet tube for inputting air into the air-stone disk for diffusing airs. An upper periphery of the bottom disk is installed with a combining recess for combing the toggle. The washing barrel is a hollow barrel for receiving washing barrel therein; and a top of the washing barrel is installed with a cover.

Abstract: A cleaning processing apparatus comprises a spin chuck for holding a wafer W, an under plate being positioned to face the back surface of the wafer W with a prescribed gap provided therebetween, a support member for supporting the under plate, and a nozzle hole formed to extended through the plate member and the support member. A chemical liquid, a pure water and a gas can be supplied into a nozzle hole through opening-closing valves, and the chemical liquid and the pure water remaining inside the nozzle hole can be sucked by a sucking device. A pure water remaining inside the nozzle hole is sucked and removed by using the sucking device after the processing of the wafer W with a pure water and, then, a gas is spurted onto the back surface of the wafer W.

Abstract: A cleaning apparatus is provided for cleaning an inner surface of a container. A spray head is arranged for operable fluid communication with a fluid pump and has a nozzle configured to disperse liquid in a mist. A mount carries the spray head and is removably supportable on a container having an inner surface to be cleaned. When removably supported on a container, the mount supports the spray head in a position within the container where the spray head can coat the inner surface of the container with mist.

Abstract: A jewelry cleaning device which emits a jet of steam under manually operable control means for the cleansing of various types of small items including jewelry, coins, trinkets, or the like. The jewelry cleaning device of the present invention is lightweight and relatively compact in size thus enabling its use on virtually any conventional tabletop and is easily stored when not in use. The steam generator is powered by conventional electrical power and is controlled by means of a thermostat to maintain the water/steam mixture at a predetermined temperature while in operation. Safety mechanisms include a pressure relief valve to automatically expel steam from the generator when the internal pressure thereof exceeds a predetermined level and a thermal fuse configured in a series connection with the heating element of the steam generator.

Abstract: A sanitation system for a refrigerated fixture having an air curtain. This sanitation includes a spray manifold positioned in a case tank of the refrigerated fixture. A reservoir is provided which is adapted to contain disinfectant. A pump is provided to pump disinfectant from the reservoir through the spray manifold, whereby disinfectant is sprayed into the case tank. A controller is connected to the pump and adapted to control the frequency and duration of the spray through the spray manifold.

Abstract: Provided is a substrate processing apparatus capable of supplying pure water that is stabilized with respect to the concentration of nitrogen gas. First and second nitrogen concentration meters to measure the nitrogen gas concentration of pure water are respectively disposed before and after a concentration change part that can dissolve and degas nitrogen gas by using a hollow fiber type separation membrane. In order to maintain the nitrogen gas concentration of pure water at a target concentration value, the dissolution and degassing in the concentration change part are controlled by adjusting the degree to which a first valve on a nitrogen gas supply path and a second valve on a nitrogen gas degassing path are opened, based on a concentration difference between a target concentration and both of the first and second nitrogen concentration meters.

Abstract: A dishwasher having a dishwasher is provided in which an intake port cover for closing a steam intake port is mechanically operated. The dishwasher has a cavity enclosed in part by a door, and a fan motor which drives a fan installed at an upper portion of the door. During a drying operation, the fan generates a suction force to draw steam from the cavity through an intake port of the fan housing and out through an exhaust port. An intake port cover is movably installed with respect to the intake port so as to open and close the steam intake port based on an operation mode of the fan. The intake port cover has a central shaft coupled to a rotational shaft of the fan such that a driving force generated by the fan as it rotates is transferred to the intake port cover so as to selectively open and close the steam intake port. The steam intake port is open during a drying operation, and is closed during a washing and rinsing operations.

Abstract: Semiconductor wafers are cleaned by placing the semiconductor wafers in a processing vessel, forming a pure water film on the surfaces of the wafers, forming an ozonic water film by dissolving ozone gas in the pure water film, and removing resist films formed on the wafers by the agency of the ozonic water film. The pure water film is formed by condensing steam on the surfaces of the wafers. The resist films formed on the surfaces of the wafers can be removed by also using hydroxyl radicals produced by interaction between steam and ozone gas supplied into the processing vessel. Thus, the resist films can be removed highly effectively.

Abstract: In a state of the inside of a treatment chamber of treatment equipment being evacuated, therein a cleaning gas containing trifluoroaceticacid (TFA) as a cleaning agent is supplied. Metal such as copper used in the formation of an interconnection or an electrode and stuck on an inner wall surface of the treatment chamber, when coming into contact with the cleaning agent (TFA) in the cleaning gas, without forming an oxide or a metallic salt, is directly complexed. The complex is sublimed due to the evacuation and is exhausted outside the treatment chamber. Accordingly, at less labor and low cost, the cleaning can be efficiently implemented.

Abstract: The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel. In an embodiment of the present invention, a semiconductor structure is placed into a first treatment vessel and chemically treated. Following the chemical treatment, the semiconductor structure is transferred directly to a second treatment vessel where it is rinsed with DI water and then dried. The second treatment vessel is flooded with both DI water and a gas that is inert to the ambient, such as nitrogen, to form a DI water bath upon which an inert atmosphere is maintained during rinsing. Next, an inert gas carrier laden with IPA vapor is fed into the second treatment vessel. After sufficient time, a layer of IPA has formed upon the surface of the DI water bath to form an IPA-DI water interface.

Abstract: A method and apparatus for cleaning, rinsing and drying a reticle used in semiconductor device manufacturing, tilts the reticle during the drying process to prevent water from the rinsing process from collecting and remaining on the reticle. The rectangularly shaped reticle is held in a carrier and the top and bottom edges of the reticle may form an angle of at least about 8° with the horizontal to maximize drying efficiency, when the carrier is placed on a horizontal surface or suspended from above.

Abstract: The invention relates to a method and system for cleaning semiconductor elements accommodated in a tank which uses ozonized, deionized (DI) ultrapure water. According to the invention, ozone is generated in an ozone generator (3) according to the principal of silent electric discharge while admitting highly pure oxygen. Said ozone is fed to a contactor (7) through which DI water flows. The ozone is then dissolved in the DI water. While optionally admitting additional chemicals, the ozonized DI water is conducted through the tank (12) holding the semiconductor elements in order to clean the same, and the used DI water is carried away (15). In order to stabilize the ozone concentration, CO2 is added to the ozone/oxygen mixture generated by the ozone generator (7).

Abstract: A cleaning device for use in the production of semiconductor components comprises two feed devices with which a fluid medium is guided across a respective surface of an object to be cleaned so that different faces of the object are simultaneously cleaned. At least two gas feeding devices, having one means each for directing a gas flow onto the surface of the object to be cleaned, open into a cleaning chamber supplying a pressurized cleaning gas. At least two extraction means are connected to the outside of the cleaning chamber for discharging the gas fed to the cleaning chamber. The object can be introduced into the cleaning chamber through at least one gap. At least two ionization means are used to ionize the gas and the particles that are present in the cleaning chamber. One ionization means each is mounted between a direction means and an extraction means.

Abstract: To clean the inside and outside of a container capable of containing dust-free objects for carrying, a cleaning apparatus is used within a clean room or a housing in which the cleaning apparatus is installed. The clean room or housing is kept highly cleaned. By the cleaning apparatus, the container is separated into a container body and a lid, the separated container body and lid are subject to cleaning conducted by cleaning means. Coupling means allows the cleaned container body and lid to be coupled again into the container. This coupling operation is performed automatically, the inside of the container that has already been cleaned will not be spoiled in its clean level.

Abstract: The invention provides a water supplying apparatus and method thereof which has a high capacity of peeling and removing a disused material such as a resist film and the like, and can efficiently use water vapor. A water supplying apparatus for executing a washing process, a cleaning process and a working process of a subject, is provided with a water vapor body supplying means for supplying a water vapor body, and a water mist body supplying means for supplying a water mist body containing liquid water fine particles, and the structure is made such that said water vapor body and said water mist body are supplied to the subject by independently controlling said two means.

Abstract: A substrate treatment apparatus includes a substrate heating device for maintaining a substrate at a temperature higher than room temperature, a wetting device for producing a wet ozone-containing gas by wetting an ozone-containing gas with a treatment solution, and a supply device for supplying the wet ozone-containing gas from the wetting device to a work object on a surface of the substrate. The supply device includes a gas disperser including apertures aligned in rows in a width direction of the work object. The apertures in adjacent rows are not aligned with each other in a direction perpendicular to the rows. At least one of the gas disperser and the substrate is movable in a direction perpendicular to the rows. A gas conduit connects the wetting device to the supply device. A wet ozone-containing gas heating device heats the wet ozone-containing gas to a temperature at least equal to the temperature of the substrate.

Abstract: The invention relates to a device for keeping optical elements clean in motor vehicles, especially sensor or camera covers. This is done according to the present invention by applying a directed stream of gas, for example a stream of air, to the transparent cover in such a way that when the cover moves relative to the surroundings no ambient atmosphere, e.g., no ambient air, reaches the surface of the cover. According to one embodiment, by using a nozzle pressurized air is blown in, producing a transverse air stream. It is also possible, using a cover, to form a buffer space in front of the cover in addition to the transverse air stream. In a further refinement, a cleaning nozzle and a heater for the cover can be provided, in order to also be able to perform cleaning when soiling has occurred during stationary operation and to remove icing at low temperatures. To this end the cleaning fluid and/or the supplied air may also be pre-heated.

Abstract: A method including the step of providing a substrate having a contact pad, and an under bump metallurgy overlying the contact pad, and a photoresist layer overlying the under bump metallurgy, and wherein the photoresist layer has an opening defined therein down to the under bump metallurgy and aligned with the contact pad. Pretreating the substrate with the first wetting solution prior to plating a first seed layer over the under bump metallurgy. Thereafter, plating a first seed layer is plated onto the under bump metallurgy.

Abstract: Disclosed are systems and methods for removing stubborn contaminants, aluminum fluoride and aluminum chloride in particular, from components of semiconductor-processing equipment. One embodiment forces steam through small holes in a gas distribution plate to remove build up on the interior walls of the holes. A cleaning fixture disposed between the steam source and the gas distribution plate delivers the steam at increased pressures. The gas distribution plate can be immersed in water during cleaning to capture the exiting steam.

Abstract: The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a gas-liquid mixture by mixing a liquid and a pressurized gas, to discharge the gas-liquid mixture to a substrate at high speeds. The mixture process is conducted in an open space out of the nozzle, and change in the supply pressure of the gas does not affect the supply of the liquid. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the gas-liquid mixture, whereby the quality of the process is improved.

Abstract: A shield for a plug valve is provided to prevent debris from hindering the movement of moving components of the plug valve. The shield prevents larger sized debris from accumulating at an opening in a wall in which the plug valve is mounted, the wall defining a confined space, such as the interior of a vessel, at least in part. The shield encloses but is spaced from the plug valve and a device is located within a space between the shield and the plug valve for directing a purging gas through the space to sweep away or purge smaller sized debris from the space.

Abstract: A novel chemistry, system and application technique reduces contamination of semiconductor wafers and similar substrates and enhances and expedites processing. A stream of liquid chemical is applied to the workpiece surface. Ozone is delivered either into the liquid process stream or into the process environment. The ozone is preferably generated by a high capacity ozone generator. The chemical stream is provided in the form of a liquid or vapor. A boundary layer liquid or vapor forms on the workpiece surface. The thickness of the boundary layer is controlled. The chemical stream may include ammonium hydroxide for simultaneous particle and organic removal, another chemical to raise the pH of the solution, or other chemical additives designed to accomplish one or more specific cleaning steps.

Abstract: Where a substrate such as a semiconductor wafer held in a process space in a process chamber consisting of an outside chamber and an inside chamber is subjected to a cleaning processing, a chemical agent such as IPA or a solvent having a surfactant added thereto is supplied in the form of a mist or a vapor toward the substrate under the sate that the substrate is stopped or rotated at a low speed after processing with a chemical agent and a subsequent rinsing processing with a pure water. After the supply of the chemical agent is stopped, the substrate is rotated at a rotating speed higher than said low speed so as to centrifugally remove the chemical agent attached to the substrate.

Abstract: A composition and apparatus and method for aqueous spray conditioning of scale on metal surfaces. An aqueous solution having a base composition of an alkali metal hydroxide is used. The aqueous solution may contain additives to improve the performance of the salt. In one embodiment, the solution is used to condition the scale on a strip of stainless steel. The strip of steel is at a temperature between the melting point of the alkali metal hydroxide in anhydrous form and a temperature at which the Leidenfrost effect appears. One or more nozzles is provided to spray the solution, and the heated strip is passed by the nozzle or nozzles where the solution is sprayed on the surface or surfaces of the strip that have the scale or oxide. The invention also includes the apparatus and control thereof for the spraying of the solution.

Abstract: A device for scouring a coating from a fibrous material includes a tank for immersing a plurality of fibers in scouring solvent therein. The device also includes a bubbling device positioned therein and having a chamber formed between a base plate and a cover plate with a plurality of holes. The plurality of fibers is mounted within the tank above the cover plate and holes of the bubbling device, so that gas bubbles produced thereby move through the scouring solvent and through the plurality of fibers. The holes are arranged in a pattern on the cover plate that corresponds to a shape assumed by the plurality of fibers when mounted within the tank. A process for scouring a coating from a fibrous material is also disclosed and involves immersing a plurality of fibers in a scouring solvent and producing a plurality of gas bubbles that move through the solvent and the plurality of fibers.

Abstract: In a method for processing a workpiece to remove material from a first surface of the workpiece, steam is introduced onto the first surface under conditions so that at least some of the steam condenses and forms a liquid boundary layer on the first surface. The condensing steam helps to maintain the first surface of the workpiece at an elevated temperature. Ozone is provided around the workpiece under conditions where the ozone diffuses through the boundary layer and reacts with the material on the first surface. The temperature of the first surface is controlled to maintain condensation of the steam.

Abstract: A foreign matter removing apparatus for removing foreign matter from a surface of a substrate. The apparatus is provided with: a substrate rotating mechanism which holds and rotates the substrate; and a fluid mixture supplying mechanism which generates a fluid mixture by mixing a treatment liquid and a gas, and supplies the fluid mixture onto the surface of the substrate held by the substrate rotating mechanism. The treatment liquid may be deionized water or a resist removing liquid. Examples of the foreign matter to be removed include a resist film formed on the substrate and a residue remaining on the surface of the substrate after ashing of the resist film.

Abstract: A method and an apparatus for removing a liquid, i.e. a wet processing liquid, from at least one surface of at least one substrate is disclosed. A liquid is supplied on a surface of substrate. Simultaneously or thereafter the liquid or the substrate is locally heated to thereby reduce the surface tension of said liquid. By doing so, at least locally a sharply defined liquid-ambient boundary is created. According to the invention, the substrate is subjected to a rotary movement at a speed to guide said liquid-ambient boundary over the surface of the substrate thereby removing said liquid from said surface.

Abstract: Resists can be removed while metal contamination of wafers, etc. and generation of particles, and growth of oxide films are suppressed. An ozone gas feed system 40 for feeding ozone gas 2 into a processing vessel 10 holding wafers W, and a steam feed means 30 for feeding steam 1 into the processing vessel 10 are provided. An on-off valve 49 inserted in the ozone gas feed pipe 42, an on-off valve 36 inserted in the steam feed pipe 34 and a switch 48 and an on-off valve 49 of ozone gas generator 41 are connected to CPU 100 which is control means and are controlled by the CPU 100. Ozone gas 2 is fed into the processing vessel 10 to pressurize the atmosphere surrounding the wafers W, and then steam 1 is fed into the processing vessel 10 while ozone gas 2 is fed into the processing vessel 10, whereby a resist of the wafers W can be removed with the steam 1 and the ozone 2 while metal corrosion, etc. can be prevented.

Abstract: An apparatus for supplying a mixture of a treatment liquid and ozone for treatment of a surface of a workpiece, and a corresponding method are set forth. The preferred embodiment of the apparatus comprises a liquid supply line that is used to provide fluid communication between a reservoir containing the treatment liquid and a treatment chamber housing the workpiece. A heater is disposed to heat the workpiece, either directly or indirectly. Preferably, the workpiece is heated by heating the treatment liquid that is supplied to the workpiece. One or more nozzles accept the treatment liquid from the liquid supply line and spray it onto the surface of the workpiece while an ozone generator provides ozone into an environment containing the workpiece.

Abstract: A substrate treating apparatus for performing a predetermined treatment of substrates. The apparatus includes a holder for holding a plurality of substrates in erected posture, a treating tank for storing hot sulfuric acid at at least 140° C. for treating the substrates immersed therein, and a bubble supply device including a plurality of bubble generating members formed by sintering quartz particles and arranged in the treating tank for generating bubbles of ozone gas such that the bubbles of ozone gas partially overlap one another in a direction parallel to surfaces of the substrates.

Abstract: The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a process liquid mist by mixing a liquid and a pressurized gas, to discharge the process liquid mist to a substrate at high speeds. The liquid may be remover liquid, intermediate rinse liquid or deionized water. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the mist, whereby the quality of the process is improved.

Abstract: A semiconductor device production method that is used to uniformly and efficiently reduce metal oxides produced on metal (copper, for example) which forms electrodes or wirings on a semiconductor device. An object to be treated on which copper oxides are produced is put into a process chamber and is heated by a heater to a predetermined temperature. Then carboxylic acid stored in a storage tank is vaporized by a carburetor. The vaporized carboxylic acid, together with carrier gas, is introduced into the process chamber via a treating gas feed pipe to reduce the copper oxides produced on the object to be treated to metal copper. As a result, metal oxides can be reduced uniformly without making the surfaces of electrodes or wirings irregular. Moreover, in this case, carbon dioxide and water are both produced in a gaseous state. This prevents impurities from remaining on the surface of copper.

Abstract: The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a process liquid mist by mixing a liquid and a pressurized gas, to discharge the process liquid mist to a substrate at high speeds. The liquid may be remover liquid, intermediate rinse liquid or deionized water. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the mist, whereby the quality of the process is improved.

Abstract: A processing system and method for chemically treating a substrate, wherein the processing system comprises a temperature controlled chemical treatment chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate holder is thermally insulated from the chemical treatment chamber. The substrate is exposed to a gaseous chemistry, without plasma, under controlled conditions including wall temperature, surface temperature and gas pressure. The chemical treatment of the substrate chemically alters exposed surfaces on the substrate.

Abstract: The invention relates to a method and system for cleaning semiconductor elements accommodated in a tank which uses ozonized, deionized (DI) ultrapure water. According to the invention, ozone is generated in an ozone generator (3) according to the principal of silent electric discharge while admitting highly pure oxygen. Said ozone is fed to a contactor (7) through which DI water flows. The ozone is then dissolved in the DI water. While optionally admitting additional chemicals, the ozonized DI water is conducted through the tank (12) holding the semiconductor elements in order to clean the same, and the used DI water is carried away (15). In order to stabilize the ozone concentration, CO2 is added to the ozone/oxygen mixture generated by the ozone generator (7).

Abstract: The present invention provides a processing liquid tank and a processing system which take smaller spaces for the tank and the heat exchanger and can be realized at low costs. The processing liquid tank 100 for storing a prescribed processing liquid comprises an inner cylinder 130 in the processing liquid tank 100. The processing liquid is stored outer of the inner cylinder 130. The pipes 160a, 160b, 160c for passing a heat medium are disposed in the processing liquid. The flow of the heat medium passing through the pipes 160a, 160b, 160c is opposite to the flow of the heat medium. The processing device comprises a processing liquid tank 100, a processing unit for processing objects-to-be-processed and a processing liquid supply line for supplying a processing liquid from the process liquid tank to the processing unit.

Abstract: In accordance with one embodiment there is provided a method of improving the performance of a substrate cleaner of the type having a megasonic probe with a probe shaft extending generally parallel to a surface of a rotating substrate, and at least one dispenser for applying a cleaning liquid onto the surface of the substrate, wherein the megasonic probe agitates the liquid on the surface. The method comprising dissolving gas in the liquid before the liquid reaches the dispenser. In accordance with another embodiment, an apparatus for cleaning substrates comprises a rotary fixture which is adapted to support a substrate and rotate the substrate about a first axis, a probe having a probe shaft extending generally parallel to a surface of the substrate, and a megasonic transducer in acoustically coupled relation to the probe.

Abstract: An apparatus for dispensing misted cleaning or disinfecting solution at one or more atomizing discharge ports for cleaning suction conduits, such as HVE conduits. The apparatus includes a venturi valve to extract concentrated cleaning/disinfectant fluid from a storage container. The concentrated fluid is mixed with a pressurized venturi-operating fluid, typically water, before being suctioned through an atomizing discharge port and entering the conduit to be cleaned.

Abstract: In a system for cleaning a workpiece or wafer, a boundary layer of heated liquid is formed on the workpiece surface. Ozone is provided around the workpiece. The ozone diffuses through the boundary layer and chemically reacts with contaminants on the workpiece surface. Preferably, the liquid includes water, and may also include a chemical. Steam may also be used with the steam also physically removing contaminants, and also heating the workpiece to speed up chemical cleaning. Sonic or electromagnetic energy may also be introduced to the workpiece.

Abstract: The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a gas-liquid mixture by mixing a liquid and a pressurized gas, to discharge the gas-liquid mixture to a substrate at high speeds. The mixture process is conducted in an open space out of the nozzle, and change in the supply pressure of the gas does not affect the supply of the liquid. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the gas-liquid mixture, whereby the quality of the process is improved.

Abstract: A hard floor surface cleaning apparatus includes an aerator, a rotating scrub medium engaging the hard floor surface, a fluid conveyor, and a fluid recovery device. The aerator is configured to produce a foam-like aerated cleaning liquid from a cleaning liquid. The fluid conveyor is coupled to the aerator and is configured to deliver the aerated cleaning liquid onto the scrub medium. The fluid recovery device is configured to remove soiled solution from the hard floor surface.

Abstract: The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a gas-liquid mixture by mixing a liquid and a pressurized gas, to discharge the gas-liquid mixture to a substrate at high speeds. The mixture process is conducted in an open space out of the nozzle, and change in the supply pressure of the gas does not affect the supply of the liquid. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the gas-liquid mixture, whereby the quality of the process is improved.

Abstract: By a simple apparatus construction and process, it is made possible to “clean precisely” a surface at the molecular/atomic level, and the purification degree of the surface processed minutely is made into 1012 molecules/cm2 or less. A steam-spraying nozzle is disposed such that a line slit nozzle is in a diameter direction, and mist-containing steam is sprayed onto the surface of a substrate. Thereby, particles in the steam-spraying surface (the particles were made to adhere by dipping the substrate in a solution containing polystyrene (particle diameter of 0.6 &mgr;m) or alumina (particle diameter of 0.3 &mgr;m to 0.5 &mgr;m) particles at 105 particles/ml.) are removed by about 90% to 95% after ten-seconds spraying, and by 99% or more, that is, to less than the detection limit of a wafer inspection device, after twenty-seconds spraying.

Abstract: An apparatus for supplying a mixture of a treatment liquid and ozone for treatment of a surface of a workpiece, and a corresponding method are set forth. The preferred embodiment of the apparatus comprises a liquid supply line that is used to provide fluid communication between a reservoir containing the treatment liquid and a treatment chamber housing the workpiece. A heater is disposed to heat the workpiece, either directly or indirectly. Preferably, the workpiece is heated by heating the treatment liquid that is supplied to the workpiece. One or more nozzles accept the treatment liquid from the liquid supply line and spray it onto the surface of the workpiece while an ozone generator provides ozone into an environment containing the workpiece.

Abstract: A method of treating semiconductor wafers in a sealed container is provided and includes transferring and vertically placing a plurality of wafers in the container and sealing the container. An inert gas is fed into the sealed container and a quantity of warm pure water is fed into the sealed container sufficient to completely submerge the plurality of wafers and establish a level of the warm pure water in the sealed container. A vapor or fog of an organic solvent is fed into at least a space in the sealed container above the level of the warm pure water and is then terminated at a prescribed time. The plurality of wafers is dried by aspirating the warm pure water through an outlet in the bottom of the container wherein the pressure in the container is reduced during the aspiration. The inert gas is fed into the sealed container until at least the termination of the drying of the plurality of wafers.

Abstract: Apparatus and method for removing material adhering to a workpiece are disclosed. A process liquid and a discontinuous phase are placed in a process tank adapted to receive a workpiece. The interface between the process liquid and the discontinuous phase is energized with megasonic energy, and the interface is contacted with and moved relative to the workpiece in a linear direction at a controlled rate, preferably across all of the workpiece. Liquid in the interface is optionally removed from the process tank at predetermined times to remove entrained particles. Numerous drying schemes can be used to reduce or eliminate formation of droplets and to speed drying time.