Abstract: In a process for cleaning one or more articles in the vapor phase of an organic solvent the solvent vapor is fed into a cleaning chamber (1) wherein an absolute pressure of 200 mbar or less is maintained and the cleaning is conducted at a temperature at or above the flash point of the organic solvent. A preferred apparatus for conducting the cleaning process contains a cleaning chamber (1), two storage tanks (2 and 3), an evaporator (4), a heating device (5) and a condenser (6). These devices are connected by means of a conduit system which is equipped with a vacuum pump (7), two pumps (8 and 9) and valves (12, 13, 14, 15, 16, 17, 18, 19, 20, 21 and 22). Inlet air (11) can be fed into the cleaning chamber (1). Waste gas (10) can be removed from the apparatus by means of the vacuum pump (7).

Abstract: Novel azeotrope-like compositions of 1,1,1,3,3-pentafluoropropane and C.sub.1 -C.sub.3 alcohols or mixtures thereof are useful in solvent cleaning.

Abstract: A process for removing soil from a substrate which includes the use of liquid cleaning composition including a solvating agent (for example, a monobasic ester) and a rinsing agent (for example, a perfluorocarbon), the solvating agent having:(i) a room temperature vapor pressure of no greater than about 40 mm Hg; and(ii) a solvating strength of no less than about 10;and the rinsing agent having:(iii) a room temperature vapor pressure of about 8 mm Hg to about 760 mm Hg; and(iv) an ozone depleting factor of no greater than about 0.

Abstract: A cleaning solvent composition that is made by either blending aliphatic fluorohydrocarbon as expressed by the general formulaC.sub.n F.sub.m H.sub.2n+2-m(wherein, n and m are a positive integral numbers, being 4.ltoreq.n.ltoreq.6, 2n-3.ltoreq.m<2n+2 respectively) or blending a mixture of this aliphatic fluorohydrocarbon and alcohol having a carbon number of 1 to 4 with lactam and/or carboxylic acid amide, tertiary amines, or alcohol having ether linkage and/or amino linkage within its molecules. A cleaning process wherein an object is dipped into the said composition to remove dirty component, then rinsed with a mixture of the said aliphatic fluorohydrocarbon and the said alcohol having a carbon number of 1 to 4, and thereafter the object is steam cleaned with the said mixture when necessity arises.

Abstract: A surface tension gradient driven flow (a Marangoni flow) is used to remove the thin film of water remaining on the surface of an object following rinsing. The process passively introduces by natural evaporation and diffusion of minute amounts of alcohol (or other suitable material) vapor in the immediate vicinity of a continuously refreshed meniscus of deionized water or another aqueous-based, nonsurfactant rinsing agent. Used in conjunction with cleaning, developing or wet etching application, rinsing coupled with Marangoni drying provides a single-step process for 1) cleaning, developing or etching, 2) rinsing, and 3) drying objects such as flat substrates or coatings on flat substrates without necessarily using heat, forced air flow, contact wiping, centrifugation or large amounts of flammable solvents.

Abstract: A method of removing adsorbates on a polyester bottle, the body of the bottle having a mean crystallinity of 32 to 70%, a methanol adsorption of 1,500 ppm or less and a paraxylene adsorption of 300 ppm or less. As a result, the bottle has excellent non-adsorptivity and heat resistance. According to the method, the adsorbates can be rapidly desorbed by holding the bottle in air of 40.degree. to 150.degree. C. or bringing the bottle into contact with water or water vapor heated at 40.degree. to 150.degree. C.

Abstract: The invention is a process for cleaning a chamber after a chemical vapor deposition has been performed therein. A residue formed during the deposition is combined with a reactive species to form a gas containing an organic substance once found in the residue and to form a film on the chamber walls and internal parts. The gas and the film are removed from the chamber. The formation of a polymer byproduct on the chamber walls and other internal parts of the chamber is minimized by the method of the invention.

Abstract: A method of cleaning metal articles comprises the steps of cleaning metal articles with alkaline washing water, rinsing the metal articles with deoxidized rinsing water, removing water from the metal articles by blowing dry vapor on the metal articles and drying the same in a heated atmosphere. Further, an apparatus for cleaning metal articles comprises a washing reservoir for containing alkaline washing water, a rinsing water deoxidizing device, a rinsing reservoir connected to the water-deoxidizing device, for containing deoxidized rinsing water supplied from the rinsing water deoxidizing device, a boiler, a water-removing reservoir connected to the boiler and supplied with dry vapor from the boiler, and a drying reservoir having an interior in which a heated atmosphere is created, which reservoirs are arranged in this order.

Abstract: An object (12) may be cleaned by CO.sub.2 reduced ESD by directing a first water mist (23) at a surface (14) of the object while imparting a relative motion between the object board and the mist to form a film of water on the object surface. As the relative motion is imparted between the board and the first mist (23), a second water mist (32) is injected into a stream (30) of solid CO.sub.2 particles (27) directed at the object surface downstream of the first mist. Water droplets in the second mist in the second mist combine with the CO.sub.2 particles to create carbonic acid that disassociates into charged ions that increase the conductivity of the water film, allowing for increased charge dissipation, thus reducing the incidence of ESD.

Abstract: The method of removing a film from a substrate (wafer) comprises a step of injecting ozone (13) into an acid aqueous solution (12) (e.g., a mixed liquid of dilute hydrogen fluoride aqueous solution and dilute hydrochloric acid); and a step of bringing bubbles (18) formed by the ozone injection step into contact with a film (17) (e.g., organic or metal contaminated film) adhering on to the substrate to remove the film (17) from the substrate (16). Therefore, the organic film or metal contaminated film adhering onto the substrate surface can be removed easily and effectively. Further, the film removing agent is bubbles formed when ozone (13) is injected into an acid aqueous solution. Each bubble is composed of an inside ozone bubble and an outside acid aqueous solution bubble. Therefore, when the bubbles are brought into contact with the film, an intermediate between ozone and the film is first formed, and then the formed intermediate can be removed from the substrate by the acid aqueous solution.

Abstract: Stable azeotrope-like compositions consisting essentially of dichloropentafluoropropane and a hydrocarbon containing six carbon atoms which are useful in a variety of industrial cleaning applications including cold cleaning and defluxing of printed circuit boards.

Abstract: The present invention provides a solvent mixture comprising n-Propyl bromide, a mixture of terpenes and a mixture of low boiling solvents, and a method for cleaning an article (e.g., an electrical, plastic, and metal parts) in a vapor degreaser using the solvent mixture. The solvent mixture of the present invention is non-flammable, noncorrosive and non-hazardous. In addition, it has a high solvency and a very low ozone depleting potential. Thus, using the solvent mixture of the present invention, oil, grease, rosin flux and other organic material can be readily removed from the article of interest in an environmentally safe manner.

Abstract: Methods of deblocking a polymeric article from a mold and/or removing undesirable materials from a polymeric article by applying supercritical fluids to the polymeric article. A preferred process is the treatment of ophthalmic lenses, such as contact lenses. Supercritical fluid, composed primarily of carbon dioxide, is applied to a contact lens affixed to a mold subsequent to the polymerization step. The application of supercritical fluid (SCF) causes the lens to efficiently and consistently separate from the mold, removes undesirable materials such as unreacted monomer, oligomers, or residual solvents from the lens core, and/or cleans the lens surface of adhered debris.

Abstract: For the purpose of cleaning parts (8), the invention comprises subjecting the latter to a prior treatment for lowering the temperature by means of a neutral gas, for example nitrogen, in an oxygen free medium, passing the parts into a cleaning chamber (4, 30) followed by subjecting the parts in succession to a partial reheating treatment in an oxygen free medium and to a treatment for drying and raising the temperature substantially to the ambient temperature.

Abstract: A part subjected to cleaning is cleaned or rinsed with a cleaning agent or rinsing agent having a nonaqueous type solvent or a hydrophilic solvent as a main component thereof. Then the cleaning agent or rinsing agent adhering to the cleaned or rinsed part subjected to cleaning is removed with a cleaning agent having perfluorocarbon as a main component thereof or the vapor of the cleaning agent. The part is subsequently dried. Otherwise, after the part subjected to cleaning has been cleaned with an aqueous type solvent or wash with water, the part is cleaned and dried with a cleaning agent having perfluorocarbon as a main component thereof or the vapor of the cleaning agent. The cleaning agent having perfluorocarbon as a main component thereof or the vapor of the cleaning agent can be used for cleaning or rinsing the part subjected to cleaning.

Abstract: A method of washing a substrate, wherein even traces of impurities in minute and high-aspect-ratio trenches or holes can be washed and removed free from contamination by washing solution and a system and a method for producing ultrapure water, capable of producing ultrahigh pure water for using in the washing. At the intermediate portions of a piping for supplying a predetermined ultrapure water to a use point, there are provided: a first steam generating means for heating a ultrapure water for conversion into a first steam; a steam heating means for further heating the first steam for conversion into a second steam higher in temperature than the first steam; and cooling means for cooling the second steam for conversion into a second ultrahigh water.

Abstract: In a method for cleaning and/or care or floors and/or floor coverings of all types such as carpets, plastics, linoleum, parquet, ceramic, ceramic tiles or marble, etc., with a single-disk or multi-disk rotary machine having at least one drive dish, whereby the floor covering is treated with a cleaning and/or care substrate upon application of heat on a case-by-case basis, an especially good and economical operation succeeds in that a stream of hot air and/or heated auxiliary medium is employed as heat carrier and activation medium, and the hot air stream and/or heated auxiliary medium proceeds onto the floor surface through the drive dish. An apparatus suitable for this purpose comprises a drive dish provided with clearances and comprises a hot air generator. The drive dish can be fashioned as a brush at its underside and/or can have an interactive connection to a co-rotating pad.

Abstract: In a semiconductor device manufacturing apparatus for forming silicon oxide films on semiconductor wafers by reduced-pressure CVD, anhydrous HF gas and an interhalogen compound gas are introduced along with a carrier gas to a reaction chamber or a vacuum evacuation pipe. The anhydrous HF gas and the interhalogen compound gas react with deposits adhering to an inner wall of the reaction chamber and the vacuum evacuation pipe so that the deposits are decomposed into gases and removed. Particles attributable to the deposits are prevented from adhering to the semiconductor wafers.

Abstract: Azeotropic or azeotrope-like compositions of effective amounts of 1,1,1,2,3,4,4,5,5,5-decafluoropentane, heptane and an alcohol such as methanol, ethanol, n-propanol or isopropanol, to form an azeotropic or azeotrope-like composition are disclosed that are useful as cleaning agents, refrigerants, aerosol propellants, heat transfer media, gaseous dielectrics, fire extinguishing agents, expansion agents for polyolefins and polyurethanes and as power cycle working fluids.

Abstract: A method of removing a native oxide film on a main surface of a silicon wafer. The native oxide film is formed in a contact hole of a patterned BPSG film or PSG film formed on the main surface. The method includes the steps of: placing a silicon wafer in a reaction chamber hermetically separated from outside atmosphere, and supplying mixed vapor of hydrogen fluoride and substantially high concentration alcohol to the reaction chamber. The step of supplying the mixed vapor of hydrogen fluoride and substantially high concentration alcohol preferably includes the steps of generating vapor from an azeotropic concentration mixture of hydrogen fluoride and alcohol, generating vapor of high purity alcohol solution and mixing these vapors. The vapor of hydrogen fluoride easily enters a small opening, which enables etching of the native oxide film. Since substantially high concentration alcohol exists in the reaction atmosphere, moisture the like by-product of etching is removed by the alcohol.

Abstract: A method for treating substrates includes chemically treating at least one substrate in a container with at least one treatment fluid and washing said at least one substrate with a washing fluid in the same container. Subsequently, the at least one substrate is dried.

Abstract: A lost core process for removing an overmoulded lost core from within a hollow product which has been overmoulded over the core, wherein the core is melted and removed by a vapor contact method. Heat is transferred to the core by condensation of vapor of a heat transfer fluid, which has a boiling point higher than the melting point of the core and lower than the melting point of the product. The heat of condensation transferred to the core by the vaporized heat transfer fluid melts the core which then flows from the hollow part. This lost core process allows the manufacture of high quality surfaces on the insides of hollow parts, while permitting close wall tolerances to be maintained, and may be used to manufacture complex parts such as water pump housings and intake manifolds.

Abstract: The invention relates to a process for the separation, in particular filtration of liquids and solids from solid-liquid mixtures, such as from a mineral, ore, coal or sludge suspensions of contaminated earth. The processing space of the filtration apparatus is submitted to overpressure and includes a collector container for solid-liquid mixture, a pressure filter, a discharge system and container for condensate and solid matter. The separation or filtration takes place at an overpressure and at an elevated temperature, preferably 40.degree. C. to 300.degree. C., conveniently 60.degree. C. to 200.degree. C., preferably about 150.degree. C. The pressure filter device communicates with a source for a heated medium.

Abstract: A process for cleaning tabletting, pan-coating and granulating machines, especially rotary tabletting presses, with a treatment chamber including at least the rotor. To ensure the complete removal of the liquid residues from the treatment chamber and from the components left in the treatment chamber, especially of the rotor of a rotary tabletting press using small amounts of cleaning and rinsing liquids, a cleaning agent and a rinsing agent are sprayed within the treatment chamber and then drained off. All openings of the treatment chamber are then closed, and a vacuum of about 0.1 to 0.2 bar (absolute pressure) is generated within the sealed treatment chamber. The vacuum drains the residual liquid from all holes and joints of the rotor and from the treatment chamber.

Abstract: Binary azeotropic and azeotrope-like compositions contain 1-heptanol, cyclohexanol, or 4-methylcyclohexanol, with octamethyltrisiloxane, and the compositions are useful for cleaning, rinsing, or drying.

Abstract: An object to be cleaned is cleaned with an cleaning agent which mixes a base cleaning agent such as silicon-containing cleaning agent or an isoparaffin containing cleaning agent with a surfactant or a hydrophilic solvent to promote the cleaning power. The object is rinsed with the base cleaning agent alone after it goes through the first cleaning step as described above. Then, this is followed by the finishing treatment by the use of hot air or steam drying. The base cleaning agents can be recovered and recycled, improving economy in the case with the use of two or more cleaning agents in combination. The excellent properties of degreasing and dewatering, comparable to those of flon system, can be obtained using a mixture of silicon-containing or isoparaffin-containing cleaning agents with surfactants and hydrophilic solvents and maintaining safety in environment.

Abstract: A semiconductor processing system (10) is provided that comprises a cleaning chamber (12) and a load lock wafer handler chamber (14). A cleaning agent (34) is placed in a cleaning bath chamber (28). A semiconductor substrate (16) is placed in contact with the cleaning agent (34). Cleaning agent (34) is initially in a liquid phase and is caused to change to a vapor phase so that the cleaning agent (34) can penetrate the topography of the surface to be cleaned. Cleaning agent (34) is then returned to a liquid phase and finally flash-evaporated to complete the cleaning process.

Abstract: Disclosed herein is a mixed solvent composition including perfluorohexane and isohexane or diisopropyl ether.

Abstract: An azeotropic composition includes a perfluorinated cycloaminoether and an organic solvent.

Abstract: A distillable, non-azeotropic solvent mixture for electronic assembly cleaning in order to adequately remove solder flux and other residues traditionally removed using CFC-based azeotropes. The mixture is heated to at least the boiling point of component A but less than the boiling point of component B. Component A vaporizes (102), forming a vapor layer above the mixture (103). Condensing elements (101) near the top of the cleaning apparatus condense the vapor (102), returning it to the heated mixture (103) to be vaporized again. The assembly (104) to be cleaned is lowered through the vapor and then immersed in the mixture (103) before being positioned in the vapor (102).

Abstract: A method of cleaning a reflector mirror in an optical dew point meter that measures the dew point or frost point of a sample gas by a process including the steps of bringing the sample gas into contact with the reflector mirror whose temperature is variable, projecting condensed rays of light or laser light onto said reflector mirror, and detecting the change in the intensity of scattered light and/or reflected light on account of the dew or frost formed on said reflector mirror, characterized by bringing a CO.sub.2 gas or a CO.sub.2 containing gas into contact with the reflector while the latter is in a cooled state, thereby condensing CO.sub.2 on the surface of the reflector mirror, and the subsequent step of heating the reflector mirror to vaporize the CO.sub.2 is dischosed.

Abstract: Provided is a process for removing organic materials from semiconductor wafers. The process involves the use of subambient deionized water with ozone absorbed into the water. The ozonated water flows over the wafers and the ozone oxidizes the organic materials from the wafers to insoluble gases. The ozonated water may be prepared in-situ by diffusing ozone into a tank containing wafers and subambient deionized water. Also provided is a tank for the treatment of semiconductor wafers with a fluid and a gas diffuser for diffusion of gases directly into fluids in a wafer treatment tank.

Abstract: The invention is a process for cleaning a chamber after a chemical vapor deposition has been performed therein. A residue formed during the deposition is combined with a reactive species to form a gas containing an organic substance once found in the residue and to form a film on the chamber walls and internal parts. The gas and the film are removed from the chamber. The formation of a polymer byproduct on the chamber walls and other internal parts of the chamber is minimized by the method of the invention.

Abstract: Liquid nitrogen is introduced onto a surface of a semiconductor wafer to remove submicron particles from its surface. LN.sub.2 flows across the wafer surface wherein the surface tension of the liquid collects contaminant particles and removes them off the edge of the wafer.

Abstract: A contact hole reaching a diffusion layer 2 provided on the surface of a silicon substrate 1 is formed by etching an insulating film 3. At this time, a surface layer 2a formed on the surface of the diffusion layer 2 is removed within a film forming unit by utilizing chlorine trifluoride gas. Next, a polycrystalline silicon film 4 is formed within tile same film forming equipment. Thus, the surface of an electrically conductive layer (including a semiconductor layer) covered with the insulating film is selectively exposed by the etching process and, prior to the formation of the film (including oxidized layer), connected to the exposed surface of the electrically conductive layer, the surface layer formed on the surface of the electrically conductive layer, which includes a naturally oxidized film, damage, contaminated substances or the like, can be completely removed.

Abstract: A quick cleaning method for hydrocarbon processing is described which avoids using the time honored steamout as a cleaning step by isolating the equipment to be cleaned from the rest of the hydrocarbon processing units, establishing a circulation loop and by pumping through the equipment an aqueous solution at an elevated temperature, of an extractant, such as a terpene, and a surfactant mixture which extracts and traps contaminants in an emulsion which is normally subjected to a high shearing step before recirculation to the equipment.

Abstract: A cleaning fluid for fabrics includes one or more hydrochlorofluorocarbons and/or hydrofluorocarbons, one or more alcohols, and one or more paraffinic hydrocarbons.

Abstract: The invention relates to compositions containing difluoromethoxy-2,2,2-trifluoroethane and an alcohol. These compositions can be used especially as solvent for cleaning electronic components and for degreasing metals.

Abstract: The parts are heated by conduction and radiation while the chamber is evacuated, whereupon the chamber is sealed air-tight and the parts are also heated by condensation of vapors from the grease and oil. When the parts reach a constant temperature the chamber is again evacuated, causing the temperature of the parts to drop as condensate thereon evaporates. Finally, the chamber is returned to atmospheric pressure and the cleaned parts are removed.

Abstract: A semiconductor wafer vapor phase treatment method and apparatus for dissolving an insulating film formed on a semiconductor wafer at a high speed and high purity. A liquid reagent is heated and vaporized to obtain reagent vapors capable of dissolving an object to be treated. The reagent vapors are passed through a hydrophobic porous film to intercept mists having a diameter greater than a predetermined value and obtain high purity reagent vapors. The purified reagent vapors are supplied to the cooled object. The vapors which dissolved the object are liquidized to generate droplets.

Abstract: Contamination can be removed from equipment of a chemical processing flow path by pumping through the plant an aqueous solution at an elevated temperature of an extractant, such as terpene, and a surfactant mixture which traps contaminants for disposal in an environmentally acceptable manner.

Abstract: A post-etch treatment method capable of imparting high corrosion prevention performance to the aluminum-containing wiring films. The sample of aluminum-containing wiring material that is etched using the halogen-type gas is treated with the plasma of a gas that has the oxygen component, and the resist formed on the aluminum-containing wiring material is reacted with oxygen and is removed. Further, the plasma is generated using a gas having the hydrogen component or this gas is liquefied into droplets thereof on the sample surface, so that halogen components (Cl, Br, etc.) adhered to the aluminum-containing wiring material through the etching treatment are reacted with hydrogen and are effectively removed in the form of hydrogen chloride (HCl) or hydrogen bromide (HBr). This makes it possible to obtain the aluminum-containing wiring material having high corrosion prevention performance.

Abstract: A method of cleaning a metal surface includes covering the portion of the metal surface with a cleaning tape. The cleaning tape is chromium in combination with a fluoride ion source bound together by fibrillated polytetrafluoroethylene. This is applied to the portion of the area to be cleaned and is subject to heat treatment at about 1800.degree. F. and a reducing atmosphere of preferably hydrogen. This effectively cleans only the area covered by the tape. Further, the tape and binder format acts to force fluoride ions into the cracks on the surface providing a significantly improved cleaning operation.

Abstract: Disclosed are methods and apparatuses for improved processing of semiconductor wafers and the like using processing chemicals, particularly hydrofluoric acid (HF) and water mixtures. Homogeneous vapor mixtures are generated from homogeneous liquid phase mixtures which are preferably recirculated, mixed and agitated. The liquid phase is advantageously circulated through a chemical chamber within the processing bowl. Exposure of wafers to vapors from the chemical chamber can be controlled by a vapor control valve which is advantageously the bottom of the processing chamber. The wafer is rotated or otherwise moved within the processing chamber to provide uniform dispersion of the homogeneous reactant vapors across the wafer surface and to facilitate vapor circulation to the processed surface. A radiative volatilization processor can be utilized to volatilize reaction by-products which form under some conditions. The processes provide efficient uniform etching with low particle count performance.

Abstract: An improved process for the decontamination of process equipment and vessels is described wherein an extractant material for the contaminant and a surfactant are vaporized, heated with steam, to condense on the internal surfaces of the vessel to trap contaminants, such as benzene, for removal from the vessel to allow safe entry for humans for inspection and maintenance.

Abstract: Stable azeotrope-like compositions of 1,1,1,2,2,3,3-heptafluoropentane, C.sub.1 -C.sub.3 alkanol and optionally nitromethane have been discovered which are useful as degreasing agents and as solvents in a variety of industrial cleaning applications including cold cleaning and defluxing of printed circuit boards and dry cleaning.

Abstract: To replace cleaning compositions based on 1,1,2-trichloro-1,2,2-trifluoroethane (F113), the invention provides a composition comprising, by weight, 30 to 69% 1,1,1,3,3-pentafluorobutane (F365-mfc), 30 to 60% methylene chloride and 1 to 10% methanol. These three compounds form a positive azeotrope (B.p.=32.1.degree. C. at normal pressure).The composition, optionally stabilized, can be used for the cleaning and/or the drying of solid surfaces, in particular for removing flux from printed circuits and for degreasing mechanical components.

Abstract: An apparatus for generating large arrays of directed beams containing thermally excited, electrically neutral gas species, including vibrationally excited molecules, free radicals, and atoms, is disclosed. A heated plate in which a designed array of long, narrow channels are formed serves both to activate and collimate the gas species, and separates a high pressure reservoir of reactive gas from an evacuated region which serves as the material processing chamber. Selection of the appropriate reservoir pressure and channel geometry facilitates the thermal excitation of the reactive gas through collisions with hot channel walls, and the formation of directed non-collisional beams which may be readily transported through the evacuated chamber. The heated channel array plate is designed to allow good gas flux uniformity over a large target area by appropriately setting the pitch spacing and aspect ratio of the channels.

Abstract: To replace cleaning compositions based on 1,1,2-trichloro-1,2,2-trifluoroethane (F113), the invention provides a composition comprising, by weight, 30 to 70% 1,1,1,3,3-pentafluorobutane (F365-mfc) and 70 to 30% methylene chloride. These two compounds form a positive azeotrope (B.p.=33.6.degree. C. at normal pressure).The composition, optionally stabilized, can be used for the cleaning and/or the drying of solid surfaces, in particular for removing flux from printed circuits and for degreasing mechanical components.

Abstract: An environmentally safe process for cleaning substrates used in critical environments with stringent end-product cleanliness requirements in a single process using microwave-energized and centrifuged dense fluids. One or more dense fluids are mixed with one or more chemical or physical agents and are simultaneously subjected to microwave radiation and centrifugal force to remove deeply recessed contaminants from internal and external surfaces of intricately arranged or formulated substrates such as biomaterials, spent activated carbon, elastomerics, surgical aids, or dental implants. Subsequently, cleaned substrates are simultaneously subjected to microwave radiation and centrifugal force under vacuum to remove residual volatile contaminants. Additionally, the cleaned and sterilized substrates are contacted with chemical or physical agents to provide enhanced cleaning and to provide new and improved substrate properties such as increased electrical insulation, conductivity, or biocompatibility.