Abstract: Methods of removing gaseous phase contaminants from a processing chamber, such as a PVD chamber, are provided. In one aspect, a method of removing gaseous phase water from a processing chamber is provided that includes placing a heated substrate that has a titanium film in the processing chamber to dissociate a first portion of the gaseous phase water into hydrogen and oxygen and capture some of the oxygen in, the titanium film. The dissociated hydrogen and uncaptured oxygen are pumped from the processing chamber and the substrate is removed from the processing chamber. Pump down times and test wafer consumption may be reduced.

Abstract: A process for producing a drying gas for drying one or more disk-like objects, in which a carrier gas and an active substance are mixed, as well as a drying process that uses the drying gas that is produced in this manner. Also, a drying-gas production device that is suitable for mixing a carrier gas and an active substance.

Abstract: A method for rinsing and drying semiconductor wafers. The method includes placing a semiconductor wafer into a chamber of a rinse/dry apparatus, directing rinse liquid over the semiconductor wafer, and moving a portion of the chamber, such as a portion of a wall of the chamber, substantially vertically relative to the remainder of the chamber to remove rinse liquid therefrom. The method may also include directing a drying fluid onto a surface of the rinse liquid to facilitate drying of the rinsed semiconductor wafers as rinse liquid is being removed from the chamber.

Abstract: A workpiece or substrate is placed in a support in a reaction chamber. A heated process liquid is sprayed onto the substrate. The thickness of the layer of process liquid formed on the substrate is controlled, e.g., by spinning the substrate. Ozone is introduced into the reaction chamber by injection into the liquid or into the reaction chamber, while the temperature of the substrate is controlled, to chemically process the substrate. The substrate is then rinsed and dried.

Abstract: A non-aqueous cleaning process uses an organic solvent for removing soil or surface contamination from contaminated articles such as printed circuit boards which are cleaned by immersion into a sump compartment of a cleaning tank containing the organic cleaning solvent. The organic solvent is preferably a hydrocarbon solvent. The cleaned articles, now coated with the organic cleaning solvent, are then disposed in a rinsing sump containing a fluorocarbon based rinsing solvent having an affinity for the organic cleaning solvent. The organic solvent is thus removed from the articles which are then dried without waste water as in a conventional solvent vapor degreasing solvent process.

Abstract: The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel. In a first embodiment of the present invention, a semiconductor structure is placed into a first treatment vessel and chemically treated. Following the chemical treatment, the semiconductor structure is transferred directly to a second treatment vessel where it is rinsed with DI water and then dried. The second treatment vessel is flooded with both DI water and a gas that is inert to the ambient, such as nitrogen, to form a DI water bath upon which an inert atmosphere is maintained during rinsing. Next, an inert gas carrier laden with IPA vapor is fed into the second treatment vessel. After sufficient time, a layer of IPA has formed upon the surface of the DI water bath to form an IPA-DI water interface.

Abstract: The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel. In a first embodiment of the present invention, a semiconductor structure is placed into a first treatment vessel and chemically treated. Following the chemical treatment, the semiconductor structure is transferred directly to a second treatment vessel where it is rinsed with DI water and then dried. The second treatment vessel is flooded with both DI water and a gas that is inert to the ambient, such as nitrogen, to form a DI water bath upon which an inert atmosphere is maintained during rinsing. Next, an inert gas carrier laden with IPA vapor is fed into the second treatment vessel. After sufficient time, a layer of IPA has formed upon the surface of the DI water bath to form an IPA-DI water interface.

Abstract: In a method for processing a workpiece to remove material from a first surface of the workpiece, steam is introduced onto the first surface under conditions so that at least some of the steam condenses and forms a liquid boundary layer on the first surface. The condensing steam helps to maintain the first surface of the workpiece at an elevated temperature. Ozone is provided around the workpiece under conditions where the ozone diffuses through the boundary layer and reacts with the material on the first surface. The temperature of the first surface is controlled to maintain condensation of the steam.

Abstract: An object is treated by contacting it with an organic solvent and then removing the organic solvent by directly displacing it with a fluid comprising a drying vapor (e.g., isopropyl alcohol or IPA vapor) such that substantially no liquid droplets of organic solvent are left on the surfaces of the object to evaporate after the direct displacement of the organic solvent with the fluid.

Abstract: Infectious wastes originating in hospitals or other locations are deposited into a sealable, pressure resistant, portable sterilizer vessel at the source of the wastes. The sterilizer vessel rides on wheels enabling travel of the filled vessel to a sterilization station at another location where steam is directed into the vessel to perform the sterilization. Operators need not transfer unprocessed infectious waste from a collection cart to a fixed sterilization vessel at the sterilization site. In the preferred form, handler exposure to unprocessed wastes is further reduced by creating an airflow from the vessel opening to a filter while the vessel is opened for deposit of wastes.

Abstract: A method of removing polishing residue from a substrate includes placing the substrate in a pressure chamber, pressurizing the pressure chamber, and maintaining the supercritical fluid in contact with the substrate until the polishing residue is removed from the substrate. Following removal of the polishing residue from the substrate, the pressure chamber is flushed and vented.

Abstract: A method and apparatus for cleaning, rinsing and Marangoni drying substrates is provided. A line of fluid is sprayed along a substrate surface forming an air/fluid interface line, and a line of drying vapor is supplied to the interface line to achieve Marangoni drying. Thus, a large portion of the substrate is simultaneously dried. A preferred apparatus employs a tank of cleaning and/or rinsing fluid. Above the tank fluid a source of rinsing fluid directs rinsing fluid to the surface of a substrate forming a meniscus on the substrate surface as the substrate is lifted from the cleaning fluid, and a drying vapor source directs drying vapor to the meniscus. The drying vapor lowers the surface tension of the meniscus, inducing a Marangoni flow of rinsing fluid from the substrate's surface, and thereby drying the substrate. The cleaning fluid tank has a substrate receiving and cleaning portion and a substrate rinsing portion.

Abstract: A waferless cleaning process of a dry etcher in semiconductor field, comprises the steps of: removing a batch of production wafers out of the chamber of the dry etcher, automatically starting waferless plasma cleaning to clean the chamber when at least a process factor reaches a preset condition, and loading next batch of production wafers into the chamber to undergo a normal production procedure. The process extends the meantime between wet clean (MTBC), prevents high particle counts, stabilizes the chamber condition, and improves process performance, tool uptime and throughput. The invention is characterized by not requiring any dummy wafers. Thus, the present invention does not need an operator. Besides, the present invention is capable of mixing different types of products.

Abstract: A method and an apparatus for removing a liquid, i.e a wet processing liquid, from a surface of at least one substrate is disclosed. A liquid is supplied on a surface of substrate. Simultaneously or thereafter besides the liquid also a gaseous substance can be supplied thereby creating at least locally a sharply defined liquid-vapor boundary. The gaseous substance and the liquid can be selected such that the gaseous substance is miscible with the liquid and when mixed with the liquid yields a mixture having a surface tension lower than that of the liquid. According to the invention, the substrate is subjected to a rotary movement at a speed to guide said liquid-vapor boundary over said substrate thereby removing said liquid from said substrate.

Abstract: An improved approach for cleaning and recycling materials is based on pressurized solvents including liquid propane, butane, dimethyl ether, and supercritical carbon dioxide. The approaches are particularly suitable for cleaning sorbent materials. The approach allows for recycling of the sorbent materials, the solvent and the contaminents, typically oils and the like.

Abstract: A substrate processing apparatus (1) for processing wafers (W) has a first processing chamber (2) capable of containing the wafers (W) and a second processing chamber (4) capable of containing the wafers (W). The second processing chamber (4) is formed below and near the first processing chamber (2) and is capable of communicating with the first processing chamber (2). A wafer guide (6) carries the wafers (W) vertically between the first and second processing chambers (2, 4). A shutter (7) is opened to allow the first and second processing chambers (2, 4) to communicate with each other and is closed to isolate the same from each other. A steam supply system (8) including steam supply port, an ozone gas supply system (9) including ozone gas supply port and an IPA supply system (10) including IPA supply port are combined with the first processing chamber (2).

Abstract: Surface cleaning, chemical treatment and drying of semiconductor substrates is carried out using foam as a medium instead of a condensed phase liquid medium. In cleaning and chemical treatment, by introducing a foam into an overflow vessel the foam is caused to pass over the substrate in moving contact therewith. Drying of the substrate is carried out, using a water solution of carbon dioxide in a pressurizable vessel. By releasing the pressure in the vessel, a layer of foam is established on the surface of the solution. The solution is discharged from the vessel, causing the foam layer to pass over the substrate in moving contact therewith. The carbon dioxide reduces the surface tension of the water, thereby enabling the foam layer to be produced and also assisting in the elimination of water from the surface of the substrate. In both cases, the use of foam reduces materials requirements and also reduces the quantity of particles deposited onto the substrate in the treatment process.

Abstract: The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel. In a first embodiment of the present invention, a semiconductor structure is placed into a first treatment vessel and chemically treated. Following the chemical treatment, the semiconductor structure is transferred directly to a second treatment vessel where it is rinsed with DI water and then dried. The second treatment vessel is flooded with both DI water and a gas that is inert to the ambient, such as nitrogen, to form a DI water bath upon which an inert atmosphere is maintained during rinsing. Next, an inert gas carrier laden with IPA vapor is fed into the second treatment vessel. After sufficient time, a layer of IPA has formed upon the surface of the DI water bath to form an IPA-DI water interface.

Abstract: Disclosed is a method for decontaminating PCB-containing transformers to obtain treated transformers containing less than 50 parts per million (ppm) polychlorinated biphenyls (PCB). The transformer is initially drained of all PCBs, then the core/coil assembly is removed. The internal surfaces of the transformer are then cleaned using a solvent. Finally, a new core/coil assembly is installed. The method is simple and can be completed within a substantially shorter period of time than methods known in the art.

Abstract: A centrifugal spray processor for dispensing a stream of ozonated water toward one or more semiconductor wafers at a non-parallel angle that is inclined from the plane of the surface of the semiconductor wafer. The spray processor includes one or more supports for receiving a plurality of semiconductor wafers and a spray post for dispensing ozonated water from a reservoir onto the semiconductor wafers. The spray post includes a plurality of nozzles that are configured to dispense ozonated water at a generally downward angle toward the surface of the semiconductor wafer. The angle of incidence of the stream of ozonated water from the spray post as measured from the plane of the semiconductor is greater than 0 degrees, and is preferably greater than about 0 degrees and less than or equal to about 30 degrees depending upon the configuration of the spray post and the semiconductor wafers.

Abstract: Method and apparatus for cleaning and/or drying objects that may have been wetted or contaminated in a manufacturing process. The objects are submerged in a rinse liquid in an enclosed chamber, and aerosol particles from a selected liquid are introduced into the chamber above the rinse liquid surface, forming a thin film on this surface. As the rinse liquid is slowly drained, some aerosol particles settle onto the exposed surfaces of the objects, and displace and remove rinse liquid residues from the exposed surfaces by a “chemical squeegeeing” effect. Surface contaminants are also removed by this process. Chamber pressure is maintained at or near the external environment pressure as the rinse liquid is drained from the chamber. Inert gas flow is employed to provide aerosol particles of smaller size and/or with greater dispersion within the chamber. Continuous filtering and shunt filtering are employed to remove most contaminants from the selected liquid.

Abstract: A method of minimizing particle or residue accumulation within an exhaust line of a substrate processing chamber having a downstream plasma apparatus connected to the exhaust line. One embodiment of the method turns ON the downstream plasma apparatus during a substrate deposition step and a chamber clean operation, and switches the downstream plasma apparatus OFF at other times including the time during which purge gases are flowed into the chamber and various chamber set up or conditioning steps are performed.

Abstract: An improved micro machine has at least a first element which is moveable relative to a second element such that the first and second elements can be in contact with each other. The contacting portions of both the first and second elements are protected with a long-lasting lubricant to prevent the elements from sticking or adhering to each other. The lubricant is a polar low molecular weight compound preferably applied as a vapor. This class of low molecular weight lubricants consists of acetone, ethanol, ethylene glycol, glycerol, isopropanol, methanol, and water. According to the disclosure a lubricant has a low molecular weight if its molecular weight is less than ˜100 amu, or has a vapor pressure ≧5 Torr at room temperature. The preferred micro machine is a GLV wherein the bottom of the deformable ribbon contacts the landing electrode when the reflector is in a down position (close to the substrate).

Abstract: A method of removal of polymers of the type including bromine, chlorine, silicon, and carbon, present on a semiconductor wafer partly covered with resist, including of rotating the wafer in its plane around its axis, in an enclosure under a controlled atmosphere, at ambient temperature, including the steps of rotating the wafer at a speed included between 500 and 2000 CPM in an enclosure filled with nitrogen; sprinkling the wafer with water, substantially at the center of the wafer; introducing hydrofluoric acid during a determined cleaning time, while maintaining the sprinkling; and rinsing the wafer by continuing the sprinkling to remove any trace of hydrofluoric acid from the wafer, at the end of the cleaning time.

Abstract: Radioactively contaminated material is cleaned by contacting the material with a decontaminating liquid comprising an aqueous solution of nitric acid containing an NOx generating agent. The NOx generating agent may be a nitrite, for example, sodium nitrite, or a ferrous metal. The material to be cleaned may comprise a plastics material contaminated with uranium or other actinides. Cleaning is effected by placing the material in a rotatable, apertured vessel in which the material is subjected to a leaching cycle by contact with the decontaminating liquid and then a washing cycle in which the material is contacted with a washing liquid.

Abstract: A system for cleaning disc drive components includes a rotary support member for receiving an assembled disc drive component. A rotary drive motor is coupled to the rotary support member for rotating the rotary support member and disc drive motor supported thereon together at a rotation speed to impart a centrifugal force on any excess lubricant contained by the disc drive motor of sufficient magnitude to draw the excess lubricant from the disc drive motor. The system may also or alternatively include an enclosure defining an interior having an oxygen-containing environment. A support platform is disposed within the oxygen-containing environment of the interior of the enclosure, for supporting a disc drive component within the oxygen-containing environment of the enclosure, for example, after the component is removed from the rotary support member.

Abstract: A method of emptying vessels containing dispersions, solutions or suspensions of polymers in which during the emptying process the liquid medium also used to take up the polymers into the dispersion, solution or suspension is passed into the space within the vessel that is not filled by the solution, dispersion or suspension, wherein the liquid medium used to take up the polymers into the dispersion, solution or suspension is introduced in vapor form.

Abstract: The invention provides a solvent mixture comprising n-propyl bromide, a mixture of low boiling solvents and, preferably, a defluxing and/or ionics removing additive and/or at least one saturated terpene. The invention also provides a method of cleaning an article (e.g., an electrical, plastic, or metal part) in a vapor degreaser using the solvent mixture. The solvent mixture of the invention is non-flammable, non-corrosive, and non-hazardous. In addition, it has a high solvency and a very low ozone depletion potential. Thus, using the solvent mixture of the invention, oil, grease, rosin flux, and other organic material can be readily removed from the article of interest in an environmentally safe manner.

Abstract: A substrate treatment device comprises a transporting arm for transporting a substrate within the treatment device, a supporting member, which is disposed on the transporting arm, for supporting the substrate, and a cleaning mechanism, which is installed in the substrate treatment device, for cleaning the supporting member. Since the substrate treatment device is equipped with the cleaning mechanism for cleaning the supporting member, the supporting member can be cleaned as required. Therefore, since the substrate always can be held on a clean supporting member, the particles are prevented from depositing on the rear surface of the substrate.

Abstract: A liquid cleaning composition comprising a solvating agent and a rinsing agent, the ratio of the vapor pressure of said rinsing agent to the vapor pressure of said solvating agent being at least about 20 and the use thereof to clean substrates that have soil adhered thereto.

Abstract: A method of treating contact lenses made from polymerizable materials by providing supercritical fluids to the lenses.

Abstract: The invention provides a solvent mixture including n-propyl bromide, a mixture of low boiling solvents and, preferably, a defluxing and/or ionics removing additive and/or at least one saturated terpene. The invention also provides a method of cleaning an article (e.g., an electrical, plastic, or metal part) in a vapor degreaser using the solvent mixture. The solvent mixture of the invention is non-flammable, non-corrosive, and non-hazardous. In addition, it has a high solvency and a very low ozone depletion potential. Thus, using the solvent mixture of the invention, oil, grease, rosin flux, and other organic material can be readily removed from the article of interest in an environmentally safe manner.

Abstract: A method for rinsing and drying semiconductor wafers. The method includes placing a semiconductor wafer into a chamber of a rinse/dry apparatus, directing rinse liquid over the semiconductor wafer, and moving a portion of the chamber, such as a portion of a wall of the chamber, substantially vertically relative to the remainder of the chamber to remove rinse liquid therefrom. The method may also include directing a drying fluid onto a surface of the rinse liquid to facilitate drying of the rinsed semiconductor wafers as rinse liquid is being removed from the chamber.

Abstract: Cleaning a component of a vapor compression system with a cleaning composition having a hydrofluorocarbon as an active ingredient.

Abstract: An object is treated by contacting it with an organic solvent and then removing the organic solvent by directly displacing it with a fluid comprising a drying vapor (e.g., isopropyl alcohol or IPA vapor) such that substantially no liquid droplets of organic solvent or drying vapor are left on the surfaces of the object to evaporate after the direct displacement of the organic solvent with the fluid.

Abstract: A jet finishing machine comprises: a water nozzle (1) for spouting a water jet flow of water in a liquid phase; a steam nozzle (3) for increasing the speed of a steam flow (4) in a gas phase to an ultrasonic speed to produce a steam jet flow (11) and for spouting the steam jet flow in excess of a thermal equilibrium with the water jet flow; and a mixing nozzle (2) for mixing the steam jet flow with the water jet flow so as to allow the steam jet flow to accelerate the water jet flow to form a two-phase jet flow (12) of the water jet flow and the steam jet flow and for directly spouting the two-phase jet flow onto a work piece (5).

Abstract: A component (10 or 12) of a flat-panel display is cleaned with a fluid having a mole-fraction dominant constituent. The cleaning operation is performed by subjecting the component to the cleaning fluid while its absolute pressure exceeds the absolute pressure at the triple point of the dominant constituent and is at least 20% of the absolute pressure value at the critical point of the dominant constituent. The temperature and pressure of the cleaning fluid are typically controlled in a direction toward the supercritical state of the dominant constituent.

Abstract: A process for removing a Group I or Group II metal species from a surface of a semiconductor substrate. The process comprises exposing the surface to a gaseous reactant mixture comprising HF, a second compound and a silane compound, and removing volatile products from the surface. The invention is further directed to a process for etching oxides from a semiconductor substrate comprising exposing the surface to a gaseous reactant mixture comprising HF, a second compound and a silane compound, and removing volatile products from the surface.

Abstract: A system (10) for processing wafers and cleaning wafer cassettes (160, 260, 460) includes a work cell (12) having a plurality of processing stations (14) for processing wafers, and at least one processing/cleaning station (30, 130, 230, 430) for receiving and delivering wafers to and from a wafer cassette (160, 260, 460), a transfer mechanism (16) for moving the wafers between the plurality of processing stations (14) and the cleaning station (30). The cleaning station (30, 130, 230, 430) may have an exterior door (32, 132, 232, 432), an exhaust (34, 134, 234, 434), an interior door (40, 140, 240, 440), a plurality of gas nozzles (166, 266, 466) for delivering a sweeping gas over the wafer cassette (160, 260, 460).

Abstract: An apparatus for rinsing and drying semiconductor wafers. The apparatus includes side walls, end walls and a base. One embodiment of the apparatus includes a rigid side and end walls. In another embodiment of the apparatus, at least a portion of the side wall is collapsible. In yet another embodiment of the apparatus, at least a portion of the wall has a tambour configuration, facilitating bending or rolling of the wall beneath the base. The apparatus includes an assembly for injecting a rinse liquid into the chamber. The side walls, end walls, and base form a chamber configured to receive at least one semiconductor wafer. Rinse liquid can be directed into the chamber, over each semiconductor wafer therein to rinse each semiconductor wafer. At least a portion of a side wall can be lowered substantially vertically to permit rinse liquid to flow out of the chamber. The apparatus also includes an assembly for injecting a drying fluid into the chamber.

Abstract: A high pressure gas cleaning purge cleans silicon oxide dust deposits from inside a dry vacuum pump while installed on a crystal grower. The high pressure gas cleaning purge is performed before or after each crystal is grown. The high pressure gas flow is injected into the inlet of the dry vacuum pump and repeatedly turned on and off to create differing turbulent flow patterns within the pump. The differing turbulent flow patterns effectively remove substantial quantities of the silicon oxide dust deposited in the pump during crystal growing.

Abstract: Surface cleaning, chemical treatment and drying of semiconductor substrates is carried out using foam as a medium instead of a condensed phase liquid medium. In cleaning and chemical treatment, by introducing a foam into an overflow vessel the foam is caused to pass over the substrate in moving contact therewith. Drying of the substrate is carried out, using a water solution of carbon dioxide in a pressurizable vessel. By releasing the pressure in the vessel, a layer of foam is established on the surface of the solution. The solution is discharged from the vessel, causing the foam layer to pass over the substrate in moving contact therewith. The carbon dioxide reduces the surface tension of the water, thereby enabling the foam layer to be produced and also assisting in the elimination of water from the surface of the substrate. In both cases, the use of foam reduces materials requirements and also reduces the quantity of particles deposited onto the substrate in the treatment process.

Abstract: Provided is a cleaning method for effectively removing particles on the surface of an object to be cleaned. This cleaning method includes dissolving oxygen into deaerated pure water to prepare a cleaning fluid, and cleaning an object to be cleaned by bringing the object into contact with the cleaning fluid to which ultrasonic vibration is being applied.

Abstract: A process for the removal of poly(arylene sulfide) based deposits from an article by contacting said poly(arylene sulfide) based deposits with a polar aprotic compound, a base, an organosulfur compound having the formula:R.sub.1 --S--S--R.sub.2,wherein R.sub.1 and R.sub.2 are hydrocarbon radicals having from 1 to 50 carbon atoms per radical, and optionally, a halogenated aromatic compound.

Abstract: A method of treating contact lenses made from polymerizable materials by providing supercritical fluids to the lenses.

Abstract: A method and apparatus for decomposing a layer of silicon oxide on a silicon wafer is described which employs the application of a heated mist of aqueous HF to the cooled wafer surface. The technique is applied to the analysis of silicon wafers for trace impurities using a scanning fluid drop to collect the residue containing the impurities after the silicon oxide has been decomposed. The novel method offers an order of magnitude increase in the rate of silicon oxide decomposition over the prior art which uses a vapor phase decomposition technique. In addition the novel method provides better control and safer disposition of the corrosive vapors over the prior art. The apparatus comprises a movable dome fitted with a carrier gas supply and a means for injecting a heated aqueous HF mist generated by a specially designed mist generator into the carrier gas flow.

Abstract: An apparatus for drying objects with fluids includes the introduction of an object (46) to be dried into a container (12). The container (12) is filled with a first fluid (48) from the bottom (16) of container (12) to a predetermined level. Subsequently, a volatile second fluid is introduced at the bottom (16) of container (12) so as to form a stable interface (56). Thereafter, volatile second fluid (50) is continued to be introduced into container (12) until first fluid (48), interface (56), and some portion of volatile second fluid (50) passes through exit (24) and two-way exit valve (26). At that point, pump (40), pumping volatile second fluid (50) into container (12), is stopped and two-way exit valve (26) closes so that residual first fluid (48) and volatile second fluid (50) pass through excess drain line (32) to first and second fluid recovery reservoir (34).

Abstract: Apparatus and method for cleansing fishing reels by spraying water as a fine, impalpable fog which condenses on the reel and runs off as it coalesces taking salt and other accumulants. The fog does not penetrate into the reel interior as an eventual source of rust and corrosion.

Abstract: A method for controlling and removing solid deposits from a surface of at least one component of a steam generating system, wherein the solid deposits are formed from an impurity introduced into the steam generating system, is disclosed.

Abstract: An improved micro machine has at least a first element which is moveable relative to a second element such that the first and second elements can be in contact with each other. The contacting portions of both the first and second elements are protected with a long-lasting lubricant to prevent the elements from sticking or adhering to each other. The lubricant is a polar low molecular weight compound preferably applied as a vapor. This class of low molecular weight lubricants consists of acetone, ethanol, ethylene glycol, glycerol, isopropanol, methanol, and water. According to the disclosure a lubricant has a low molecular weight if its molecular weight is less than .about.100 amu, or has a vapor pressure .gtoreq.5 Torr at room temperature. The preferred micro machine is a GLV wherein the bottom of the deformable ribbon contacts the landing electrode when the reflector is in a down position (close to the substrate).