Abstract: A method for drying objects with fluids includes the introduction of an object (46) to be dried into a container (12). The container (12) is filled with a first fluid (48) from the bottom (16) of container (12) to a predetermined level. Subsequently, a volatile second fluid is introduced at the bottom (16) of container (12) so as to form a stable interface (56). Thereafter, volatile second fluid (50) is continued to be introduced into container (12) until first fluid (48), interface (56), and some portion of volatile second fluid (50) passes through exit (24) and two-way exit valve (26). At that point, pump (40), pumping volatile second fluid (50) into container (12), is stopped and two-way exit valve (26) closes so that residual first fluid (48) and volatile second fluid (50) pass through excess drain line (32) to first and second fluid recovery reservoir (34).

Abstract: A method and arrangement for the insitu cleaning of a chamber in which process gas is injected into the chamber through gas injection ports. Separate gas injection ports through which process gas and the cleaning gas are injected into the chamber are provided. The process gas is injected into the chamber, such as a plasma chamber, through a first gas injection port while the cleaning gas, which cleans the residue left by the process gas during the deposition process, is injected into the chamber through the second gas injection port that is separate from the first gas injection port through which the process gas is injected. The separation of the gas injection ports provides an equalized pressure within the jet screw ports for the process gas and the interior of the chamber. This allows the jet screw ports to be maximally cleaned and reduces the frequency of replacement of the jet screw ports in the chamber.

Abstract: A method for rinsing and drying semiconductor wafers. The method includes placing a semiconductor wafer into a rinse/dry apparatus, directing rinse liquid over the semiconductor wafer, and lowering at least a portion of a side wall of the rinse/dry apparatus to remove rinse liquid therefrom.

Abstract: A method for removal of post reactive ion etch sidewall polymer rails on a Al/Cu metal line of a semiconductor or microelectronic composite structure comprising:1) supplying a mixture of an etching gas and an acid neutralizing gas into a vacuum chamber in which said composite structure is supported to form a water soluble material of sidewall polymer rails left behind on the Al/Cu metal line from the RIE process; removing the water soluble material with deionized water; and removing photo-resist from said composite structure by either a water-only plasma process or a chemical down stream etching method; or2) forming a water-only plasma process to strip the photo-resist layer of a semiconductor or microelectronic composite structure previously subjected to a RIE process;supplying a mixture of an etching gas and an acid neutralizing gas into a vacuum chamber on which said structure is supported to form a water soluble material of saidwall polymer rails left behind on the Al/Cu metal line from the RIE process; a

Abstract: The refillable polyester bottle of the invention has a mean crystallinity of 32 to 70% at the bottle body, a methanol adsorption of 1,500 ppm or less at the same portion and a paraxylene adsorption of 300 ppm or less at the same portion. Therefore, the bottle is excellent in non-adsorptivity and heat resistance. According to the method of removing adsorbates on a polyester bottle of the invention, the adsorbates can be rapidly desorbed by holding the bottle in air of 40 to 150.degree. C. or bringing the bottle into contact with water or water vapor heated at 40 to 150.degree. C.

Abstract: Methods for cleaning and/or drying objects that may have been wetted or contaminated in a manufacturing process. The objects are submerged in a rinse liquid in an enclosed chamber, and aerosol particles from a selected liquid are introduced into the chamber above the rinse liquid surface, forming a thin film on this surface. As the rinse liquid is slowly drained, some aerosol particles settle onto the exposed surfaces of the objects, and displace and remove rinse liquid residues from the exposed surfaces, possibly by a "chemical squeegeeing" effect. Surface contaminants are also removed by this process which may be performed at about room temperature. Chamber pressure is maintained at or near the external environment pressure as the rinse liquid is drained from the chamber. Inert gas flow is employed to provide aerosol particles of smaller size and/or with greater dispersion within the chamber. Continuous filtering and shunt filtering are employed to remove most contaminants from the selected liquid.

Abstract: Methods for drying and cleaning objects that may have been wetted or contaminated in a manufacturing process. The objects are submerged in a rinse liquid in an enclosed chamber, and aerosol particles from a selected liquid are introduced into the chamber above the rinse liquid surface, forming a thin film on this surface. As the rinse liquid is slowly drained, some aerosol particles settle onto the exposed surfaces of the objects, and displace and remove rinse liquid residues from the exposed surfaces, possibly by a "chemical squeegeeing" effect. Surface contarminants are also removed by this process, which may be carried out at or near room temperature. Chamber pressure is maintained at or near the external environment pressure as the rinse liquid is drained from the chamber.

Abstract: A method for washing both surfaces of a substrate, comprising (a) a first washing step for washing a front surface of a substrate, which is kept rotated, by bringing a scrubbing member into contact with said front surface of the substrate while supplying a washing liquid onto the front surface, (b) a second washing step for washing a back surface of the substrate, which is kept rotated, by bringing a scrubbing member into contact with said back surface of the substrate while supplying a washing liquid onto the back surface, (c) a heating step for drying under heat the wet surfaces of the substrate, (d) a recipe determining step for determining whether said heating step (c) is performed at a period between said first washing step (a) and second washing step (b) and at a period after the second washing step (b), whether the heating step (c) is performed only once after the second washing step (b), or whether the heating step (c) is not performed, and (e) a conducting step for performing or not performing the he

Abstract: A treatment method of semiconductor wafers and the like, for carrying out step by step in a sealed container, a series of processes comprising chemical process with a cleaning chemical (chemical process) and final water rinsing process by using rinsing pure water (rinse process) and a drying process of removing attached water from the surface of an object through mixing substitution using an organic solvent, and a treatment system for the same, wherein warm pure water is fed into the sealed container after the final water rinsing process of the cleaning process is completed. The vapor or fog of the organic solvent is fed into the space procured on the upper side of the container upward the water surface of pure warm water, where the object as placed vertically in parallel arrangement is immersed and sunk.

Abstract: A composition for cleaning an anilox roller includes a small amount of ammonium chlorides, a plurality of silica particles, a sulfonicacid, a nonoxynol, water, and an isopropyl acetate making up the remaining portion of the composition. A method of utilizing the cleaning composition includes selecting an applicator, applying the composition to the anilox roller, wiping the anilox roller with the applicator until the surface and the cells of the anilox roller are substantially free of dried ink and other dried or hardened substances.

Abstract: The invention provides a solvent mixture including n-propyl bromide, a mixture of low boiling solvents and, preferably, a defluxing and/or ionics removing additive and/or at least one saturated terpene. The invention also provides a method of cleaning an article (e.g., an electrical, plastic, or metal part) in a vapor degreaser using the solvent mixture. The solvent mixture of the invention is non-flammable, non-corrosive, and non-hazardous. In addition, it has a high solvency and a very low ozone depletion potential. Thus, using the solvent mixture of the invention, oil, grease, rosin flux, and other organic material can be readily removed from the article of interest in an environmentally safe manner.

Abstract: A method is provided for cleaning an electronic circuit board having first and second opposing surfaces. The method includes directing a stream of carbon dioxide particles against the first surface. Steam is sprayed toward the first and second surfaces such that condensation of the steam caused by cooling from the CO.sub.2 particles forms a thin film of water on the first surface for conducting electrostatic charge away from the first surface. The CO.sub.2 particles substantially remove residue present on the first surface, thereby cleaning the circuit board.

Abstract: A degreasing and cleaning method for cleaning circuit boards and the like has a first, wash sump containing a boiling, environmentally friendly wash material and a second, rinse, sump containing an environmentally friendly rinse material, separated by a weir. An anti-splash and surge control fence is mounted on top of the weir to control splashing and spill-over between the sumps. The wash sump contains a plurality of spray wands and a programmed hoist pans the carrier of the boards past the spray wands in incremental steps. After the wash cycle, the carrier is introduced into the second, rinse, sump and then given a final vapor rinse. The temperature ranges in which the apparatus is operated yield optimum cleaning.

Abstract: A method and apparatus for rinsing and drying semiconductor wafers. The apparatus includes side walls, end walls and a base. At least a portion of the wall descends relative to the base to facilitate the flow of liquid from the chamber. One embodiment of the apparatus includes a rigid side and end walls. In another embodiment of the apparatus, at least a portion of the side wall is collapsible. In yet another embodiment of the apparatus, at least a portion of the wall has a tambour configuration, facilitating bending or rolling of the wall beneath the base. The apparatus includes an assembly for injecting a rinse liquid into the chamber. The apparatus also includes an assembly for injecting a drying fluid into the chamber. The method includes placing a semiconductor wafer into the rinse/dry apparatus, directing rinse liquid over the semiconductor wafer, and lowering a side wall of the rinse/dry apparatus to remove rinse liquid therefrom.

Abstract: A process for removing organic materials from semiconductor wafers and a process for chemical solvent drying of wafers. In the drying process, a wafer submerged in a bath having a lower aqueous layer and an upper organic layer is lifted from the lower aqueous layer up through the upper organic layer and removed from the bath.

Abstract: Azeotropic or azeotrope-like compositions comprising effective amounts of 1,1,1,2,3,4,4,5,5,5-decafluoropentane and cyclohexane or 1,1,1,2,3,4,4,5,5,5-decafluoropentane, cyclohexane and acetone to form an azeotropic or azeotrope-like composition that are useful as cleaning agents, displacement drying agents, wipe solvents, refrigerants, aerosol propellants, heat transfer media, gaseous dielectrics, fire extinguishing agents, expansion agents for polyolefins and polyurethanes and as power cycle working fluids are described.

Abstract: In the process of dry etching or the like, the bond between specific atoms contained in a deposit attached on the interior wall of a chamber and composed of an etching by-product is monitored by using an infrared ray. An incoming infrared ray generated from a light source for monitoring is directed to the deposit so that the absorption spectrum of an outgoing infrared ray passing through the deposit is measured by an infrared-ray measuring device. As a result, accurate information on the inside of the chamber can be obtained and a reduction in production yield due to variations in etching characteristics and generated particles can be prevented. Moreover, the availability of an apparatus can be increased by optimizing a maintenance cycle based on a specific variation in the absorption spectrum of the infrared ray. In particular, process administration and process control in such processing using plasma as dry etching and plasma CVD can be improved.

Abstract: An equipment for cleaning, etching and drying a semiconductor wafer is provided with a process chamber having a closed space of which temperature is capable of being heated and adjusted by a heater; a mesh arranged at the center part in the process chamber and supporting at least one semiconductor wafer to be cleaned; a plurality of spray nozzles arranged in line at the upper part in the process chamber; and a rotary discharge nozzle arranged at the lower part in the process chamber. The spray nozzles spray chemical and ultrapure water with nitrogen gas in mist state, and the rotary discharge nozzle blows out chemical and ultrapure water as jet stream by rotation of a first arm and second arms thereof.

Abstract: A method of vapor degreasing workpieces using a refrigerated vapor degreasing system. The system has a tank for containing a bath of degreasing solvent, a heater for vaporizing the solvent, a primary solvent condenser, a secondary solvent condenser, and a single refrigeration unit which can be switched to operate in two different modes. Workpieces are loaded and supported within the tank. The degreasing solvent is heated and evaporated in the tank. Refrigerant is cycled in a closed-loop, single compressor refrigeration system as low-pressure/low-temperature vapor, high-pressure/high-temperature vapor, high-pressure/low-temperature liquid, low-pressure/low-temperature vapor, and low-pressure/low-temperature liquid. A degreasing zone is formed around the workpiece and a primary evaporation barrier is formed above the workpiece by circulating low-pressure/low-temperature refrigerant from the refrigeration system through the primary solvent condenser located above the workpiece.

Abstract: An object to be cleaned is cleaned with an cleaning agent which mixes a base cleaning agent such as silicon-containing cleaning agent or an isoparaffin containing cleaning agent with a surfactant or a hydrophilic solvent to promote the cleaning power. The object is rinsed with the base cleaning agent alone after it goes through the first cleaning step as described above. Then, this is followed by the finishing treatment by the use of hot air or steam drying. The base cleaning agents can be recovered and recycled, improving economy in the case with the use of two or more cleaning agents in combination. The excellent properties of degreasing and dewatering, comparable to those of flon system, can be obtained using a mixture of silicon-containing or isoparaffin-containing cleaning agents with surfactants and hydrophilic solvents and maintaining safety in environment.

Abstract: At first, a semiconductor wafer is held and rotated by a spin chuck, and supplied with a hydrofluoric acid solution from a chemical liquid nozzle to remove natural oxide films on the wafer. Then, the wafer is supplied with pure water for rinsing it from a rinsing nozzle while the wafer is rotated. Right before the pure water stops being supplied, the wafer is supplied with an IPA liquid from a replacing medium nozzle while the wafer is rotated. The pure water is replaced with the IPA liquid by means of the Marangoni effect and a centrifugal force. Then, the wafer is rotated at 300 rpm for one second, at 3000 rpm for four seconds, and at 5000 rpm for five seconds, in this order, to remove the IPA liquid by means of a centrifugal force.

Abstract: A method of manufacturing a semiconductor device comprises the steps of introducing a first gas containing steam or alcohol into a processing vessel housing a semiconductor substrate, and introducing a hydrogen fluoride gas as a second gas into the processing vessel after stopping introduction of the first gas into the process chamber.

Abstract: A method for removing etch residue material in which the removing process is simple, and the metal is prevented from being corroded or damaged. The method for removing etch residue materials and photoresist after carrying out a dry etching includes the steps of preparing a dry chemical by using one or more gas compounds, and removing the etch residue materials by raising the dry chemical above a critical point, wherein the dry chemical comprises carbon dioxide gas and one or more gases selected from a group consisting of DMSO (dimethyl sulfoxide), DMFA (dimethyl formamide), and THF (phentydrone).

Abstract: A method of removing inorganic contamination from substantially the surface of a semiconductor substrate, the method comprising the steps of: reacting the inorganic contamination with at least one conversion agent, thereby converting the inorganic contamination; removing the converted inorganic contamination by subjecting it to at least one solvent agent, the solvent agent is included in a first supercritical fluid (preferably supercritical CO.sub.2); and wherein the converted inorganic contamination is more highly soluble in the solvent agent than the inorganic contamination.

Abstract: A method of removing inorganic contamination (contamination 104 of FIGS. 2a-2b) from a layer (layer 102) overlying a substrate (substrate 100), the method comprising the steps of: removing the layer overlying the substrate with at least one removal agent; reacting the inorganic contamination with at least one conversion agent, thereby converting the inorganic contamination; removing the converted inorganic contamination by subjecting it to at least one solvent agent, the solvent agent included in a first supercritical fluid; and wherein the converted inorganic contamination is more highly soluble in the solvent agent than the inorganic contamination.

Abstract: A method for removing particles and residue that build up inside a substrate processing system during a substrate processing operation, without overetching system components, is described. One method includes the steps of: flowing an etchant gas comprising chlorine trifluoride (CIF.sub.3), diluted with an inert carrier gas, into a processing chamber after completion of the substrate processing operation. The parts of the system within the chamber with the greatest amount of build-up are preferentially heated to facilitate more extensive cleaning of those parts. Parts of the system within the chamber with less build up are protected from overetching by keeping them about 200.degree. C. cooler than the heavily-deposited parts. Heating the heavily-deposited chamber parts to a temperature of at least about 400.degree. C. allows using a lower concentration of etchant gas for the cleaning process than a lower temperature process would allow.

Abstract: A method for removing surface coatings from the hull of a ship by focusing annular streams of ultra-high pressure water from a rotating nozzle having one or more orifices. The nozzle orifices have oblique angles from the central axis of the rotating nozzle whereby the force of the water leaving the nozzle through the orifice imparts an opposite rotational force to the rotating nozzle. The placement of the orifices on the rotating nozzle is done in such a manner that the annular streams of water act in concert when striking the working surface to remove the paint. A waste water recovery system collects waste water and particulates of paint stripped from the working surface, the particulates are removed for later disposal and the water is recycled.

Abstract: The present invention provides a solvent mixture comprising n-propyl bromide, a mixture of terpenes and a mixture of low boiling solvents, and a method for cleaning an article (e.g., an electrical, plastic, and metal parts) in a vapor degreaser using the solvent mixture. The solvent mixture of the present invention is non-flammable, non-corrosive and non-hazardous. In addition, it has a high solvency and a very low ozone depleting potential. Thus, using the solvent mixture of the present invention, oil, grease, rosin flux and other organic material can be readily removed from the article of interest in an environmentally safe manner.

Abstract: A stabilized, environmentally-safe solvent mixture and method for using the mixture are provided. The solvent mixture has an ozone depletion factor of less than 0.08. The mixture includes about 80-96.8%, by volume, chlorobromomethane and about 3.2-20.0%, by volume, of a mixture of stabilizers. The mixture of stabilizers includes nitromethane, 1,2-butylene oxide, and 1,3-dioxolane. The mixture of stabilizer inhibits the decomposition of chlorobromomethane. The solvent mixture is particularly effective for cleaning articles having hydrocarbon-soluble contaminants, especially in a vapor degreaser.

Abstract: A method for cleaning a deposition chamber that is used in fabricating electronic devices including the steps of delivering a precursor gas into a remote chamber that is outside of the deposition chamber, activating the precursor gas in the remote chamber via a high power source to form a reactive species, flowing the reactive species from the remote chamber into the deposition chamber, and using the reactive species that is flowed into the deposition chamber from the remote chamber to clean the inside of the deposition chamber.

Abstract: The detergent of this invention, directed to the cleaning of an object having a gap portion at least in part thereof, contains at least one of components of the detergent having a solubility parameter difference of not more than 3 from and a contact angle within 15.degree. with at least one of components of a smear on the object. The detergent provides an ideal cleaning for the object because it easily permeates into and dissolves the machining oil filling the gaps between closely cohering thin metallic strips. The method of cleaning according to the invention has first cleaning the object with a polar detergent and then rinsing and drying the cleaned object with a detergent having low polarity or no polarity. In the precision cleaning of such objects as electronic parts, therefore, it manifests satisfactory cleaning and drying properties.

Abstract: A method for controlling and removing solid deposits from a surface of at least one component of a steam generating system, wherein the solid deposits are formed from an impurity introduced into the steam generating system.

Abstract: A method for final rinse/dry for critically cleaning articles includes prefiltering a liquid, and flowing the ultrapurified liquid to a holding chamber containing articles so that the ultrapurified liquid rinses the articles in the holding chamber. After ceasing the flow of ultrapurified liquid and draining residual liquid from the holding chamber, an inert gases flows to the holding chamber to provide an inert atmosphere therein, and the holding chamber is heated by way of a heater to dry the articles. Then, the inert gas is purged from the holding chamber.

Abstract: An object to be cleaned is cleaned with an cleaning agent which mixes a base cleaning agent such as silicon-containing cleaning agent or an isoparaffin containing cleaning agent with a surfactant or a hydrophilic solvent to promote the cleaning power. The object is rinsed with the base cleaning agent alone after it goes through the first cleaning step as described above. Then, this is followed by the finishing treatment by the use of hot air or steam drying. The base cleaning agents can be recovered and recycled, improving economy in the case with the use of two or more cleaning agents in combination. The excellent properties of degreasing and dewatering, comparable to those of flon system, can be obtained using a mixture of silicon-containing or isoparaffin-containing cleaning agents with surfactants and hydrophilic solvents and maintaining safety in environment.

Abstract: A system and method for recovering vapors in industrial washing equipment, wherein a solvent is used to wash various articles within a wash area of the equipment. The system includes a hood supported above the wash area, a motor driven fan mounted within the hood for creating an envelope of negative pressure between the wash area and the hood to draw rising vapors into the hood and to direct the vapors at high velocity against a surface to cause separation of pure solvent liquid droplets from the vapor through impaction, and a coalescer for gathering the separated droplets of pure solvent prior to directing the pure solvent to a holding tank for reuse in washing operations.

Abstract: An object to be cleaned is cleaned with an cleaning agent which mixes a base cleaning agent such as silicon-containing cleaning agent or an isoparaffin containing cleaning agent with a surfactant or a hydrophilic solvent to promote the cleaning power. The object is rinsed with the base cleaning agent alone after it goes through the first cleaning step as described above. Then, this is followed by the finishing treatment by the use of hot air or steam drying. The base cleaning agents can be recovered and recycled, improving economy in the case with the use of two or more cleaning agents in combination. The excellent properties of degreasing and dewatering, comparable to those of flon system, can be obtained using a mixture of silicon-containing or isoparaffin-containing cleaning agents with surfactants and hydrophilic solvents and maintaining safety in environment.

Abstract: Azeotropic or azeotrope-like compositions of effective amounts of 1,1,1,2,3,4,4,5,5,5-decafluoropentane, trans-1,2-dichloroethylene, cyclopentane and methanol or 1,1,1,2,3,4,4,5,5,5-decafluoropentane, trans-1,2-dichloroethylene and cyclopentane to form an azeotropic or azeotrope-like composition are disclosed that are useful as cleaning agents, refrigerants, aerosol propellants, heat transfer media, gaseous dielectrics, fire extinguishing agents, expansion agents for polyolefins and polyurethanes and as power cycle working fluids.

Abstract: An injection apparatus and method is disclosed that enables the internal space to be cleanable by preventing the solidification of binder through washing and cleaning inside a heating cylinder when molding material formation is completed. An inlet pipe is provided between an inlet of an upper wall at the rear portion of a heating cylinder having a nozzle member at the tip internally equipped with an injection screw and a hopper is installed above the inlet. Pipelines for cleaning water and for compressed air are connected to the inlet pipe. Cleaning inside the heating cylinder is made possible by operating transfer valves provided at these pipelines.

Abstract: A silicon substrate cleaning method and apparatus is presented in which a hydrous cleaning solution is caused to evaporate at a temperature at about or above its azeotropic temperature and a cleaning vapor thus produced is applied to a substrate to remove unwanted oxide. This method can be applied to a series of silicon substrates with consistent results, substrate to substrate, despite the azeotropic temperature characteristics of the hydrous cleaning solution. The method produces an oxide-free substrate without contaminants, particulates or residue.

Abstract: A method for removing a diffusion coating which includes Al from a Ni base alloy surface portion comprises mechanically removing substantially a coating outer portion disposed on a coating diffused inner portion, and then depleting Al from the exposed diffused inner portion. Such depletion is by exposing the inner portion to a reducing gas comprising greater than about 6 wt. % halogen gas, for example a mixture of up to about 20 wt. % of a hydrohalogen gas, such as hydrogen fluoride gas, with the balance principally hydrogen gas. The temperature of exposure is at least about 1600.degree. F., preferably about 1600.degree.-2000.degree. F. for about 2-10 hours.

Abstract: A process for removing soil from a substrate which includes the use of a liquid cleaning composition comprising a solvating agent (for example, a monobasic ester) and a rinsing agent (for example, a perfluorocarbon), the solvating agent having:(i) a room temperature vapor pressure of no greater than about 40 mm Hg; and(ii) a solvating strength of no less than about 10; and the rinsing agent having:(iii) a room temperature vapor pressure of about 8 mm Hg to about 760 mm Hg; and(iv) an ozone depleting factor of no greater than about 0.

Abstract: Methods are provided for cleansing contaminants from substrates, such as semiconductor wafer handling implements, and thereby reduce the incidence of contamination of semiconductor devices being assembled upon the semiconductor wafers. In one aspect of the invention, a substrate such as a semiconductor cassette or other semiconductor wafer handling implement, is inserted into a chamber that is substantially isolated from a surrounding environment. A pressurized, and optionally purified, cleansing medium is directed against at least one surface of the substrate to dislodge contaminants from the substrate surface. Dislodged contaminants are evacuated with negative pressure from the chamber. In a preferred aspect of the invention, the cleansing medium is an inert gas, such as nitrogen, and is applied to the substrate at a pressure from about 10 p.s.i. to about 100 or more p.s.i.

Abstract: A method and apparatus for cleaning the interior of a container or one or more objects suspended therein comprising generating a fluid vapor column by forming an air column having a direction of air flow. The air column is passed through a heating means, so as to heat the air, and then the cleaning fluid is injected into the air column against the direction of air flow. The fluid vapor column is then brought into contact with the interior of the container so that the vapor condenses on the interior of the container or on objects suspended therein.

Abstract: The present invention is directed to a method of removing polymer residue from chemical processing equipment, comprising contacting said residue with NMP vapors.

Abstract: A method for a wafer cleaner using a rotation mechanism. Wafers are placed into a carrier 3 having grooves to maintain a spacing between the wafers. The carrier 3 and wafers are placed into a tank 1 with a cleaning solution. Nozzles 11 are used to direct pressurized solution against the wafers causing them to rotate within the carrier. In another embodiment, the tank 1 includes a megasonic transducer 16. In the second embodiment, the wafers are rotated while the megasonic transducer 16 is producing megasonic energy. The rotation of the wafers causes the cleaning solution and the megasonic energy to act on the wafers uniformly, and further exposes the edges of the wafers directly to the cleaning solution and the megasonic energy, thereby enhancing particle removal from the wafers. Other embodiments are provided.

Abstract: Generally, and in one form of the invention, a method is presented for the photo-stimulated removal of trace metals 16 from a surface 11, comprising the steps of covering the surface 11 with an ambient species 14, exciting the trace metals 16 and/or the ambient species 14 by photo-stimulation sufficiently to allow reaction of the trace metals with the ambient species to form metal products, and removing the ambient species 14 and the metal products from the surface 11.Other methods are also disclosed.

Abstract: Generally, and in one form of the invention, a method is presented for the photo-stimulated removal of reacted metal contamination 16 from a surface 11, comprising the steps of: covering the surface with a liquid ambient 14; exciting the reacted metal contamination 16 and/or the liquid ambient 14 by photo-stimulation sufficiently to allow reaction of the reacted metal contaminantion 16 with the liquid ambient 14 to form metal products; and removing the liquid ambient 14 and the metal products from the surface 11. Other methods are also disclosed.

Abstract: A part subjected to cleaning is cleaned or rinsed with a cleaning agent or rinsing agent having a nonaqueous type solvent or a hydrophilic solvent as a main component thereof. Then the cleaning agent or rinsing agent adhering to the cleaned or rinsed part subjected to cleaning is removed with a cleaning agent having perfluorocarbon as a main component thereof or the vapor of the cleaning agent. The part is subsequently dried. Otherwise, after the part subjected to cleaning has been cleaned with an aqueous type solvent or wash with water, the part is cleaned and dried with a cleaning agent having perfluorocarbon as a main component thereof or the vapor of the cleaning agent. The cleaning agent having perfluorocarbon as a main component thereof or the vapor of the cleaning agent can be used for cleaning or rinsing the part subjected to cleaning.

Abstract: Liquid solvents having superior cleaning power include at least one polar compound having at least one strongly electronegative oxygen, such as ethylene diacetate, and at least one alicyclic carbonate, such as ethylene carbonate, with or without other additives. The solvents exhibit low toxicity; are nonflammable, pH neutral, essentially nonvolatile, and aprotic; and have other chemical and physical properties that reduce the risk of exposing the user unnecessarily to hazardous conditions. Solvents comprising ethylene carbonate, ethylene diacetate, and, optionally, triethanolamine and/or N-methyl-2-pyrrolidone are superior cleaners for a wide range of residues and are environmentally and physiologically safe.

Abstract: Components, especially of an electronic or electrical type, are cleaned by contact with a flammable liquid organic solvent (21), especially an alcohol. The surface of the solvent is covered with a non-flammable highly fluorinated compound vapor blanket (26), which vapor may also be used to transfer heat to the organic solvent. Both highly fluorinated compound and organic solvent are condensed and re-cycled.