Abstract: A method of improving the thermoelectric figure of merit (ZT) of a high-efficiency thermoelectric material is disclosed. The method includes the addition of fullerene (C60) clusters between the crystal grains of the material. It has been found that the lattice thermal conductivity (?L) of a thermoelectric material decreases with increasing fullerene concentration, due to enhanced phonon-large defect scattering. The resulting power factor (S2/?) decrease of the material is offset by the lattice thermal conductivity reduction, leading to enhanced ZT values at temperatures of between 350 degrees K and 700 degrees K.

Abstract: A thermoelectric material is disclosed. The thermoelectric material is represented by the following formula; (A1-aA?a)4-x(B1-bB?b)3-y. A is a Group XIII element and A? may be a Group XIII element, a Group XIV element, a rare earth element, a transition metal, or combinations thereof. A and A? are different from each other. B may be S, Se, Te and B? may be a Groups XIV, XV, XVI or combinations thereof. B and B? are different from each other. a is equal to or larger than 0 and less than 1. b is equal to or larger than 0 and less than 1. x is between ?1 and 1 and wherein y is between ?1 and 1.

Abstract: The present invention is generally directed to nanocomposite thermoelectric materials that exhibit enhanced thermoelectric properties. The nanocomposite materials include two or more components, with at least one of the components forming nano-sized structures within the composite material. The components are chosen such that thermal conductivity of the composite is decreased without substantially diminishing the composite's electrical conductivity. Suitable component materials exhibit similar electronic band structures. For example, a band-edge gap between at least one of a conduction band or a valence band of one component material and a corresponding band of the other component material at interfaces between the components can be less than about 5kBT, wherein kB is the Boltzman constant and T is an average temperature of said nanocomposite composition.

Abstract: A thermoelectric conversion device including a thermoelectric conversion material including a polythienylenevinylene including units represented by formula (1), wherein R1 and R2 are each independently a hydrogen atom, or an alkoxy or alkyl group, and the thermoelectric conversion material is doped with a dopant.

Abstract: A thermoelectric material including a body centered cubic filled skutterudite having the formula AxFeyNizSb12, where A is an alkaline earth element, x is no more than approximately 1.0, and the sum of y and z is approximately equal to 4.0. The alkaline earth element includes guest atoms selected from the group consisting of Be, Mb, Ca, Sr, Ba, Ra and combinations thereof. The filled skutterudite is shown to have properties suitable for a wide variety of thermoelectric applications.

Abstract: A method of producing a thermoelectric conversion element includes preparing a dispersion liquid by mixing slurry containing ceramic particles with salts of at least two elements that constitute a thermoelectric conversion material, and then, precipitating the at least two elements that constitute the thermoelectric conversion material on the ceramic particles in the dispersion liquid; performing washing; performing heating treatment; and performing sintering. Contact between a solution with a pH lower than 1 among solutions of the salts and the slurry containing the ceramic particles is avoided, or the solution with the pH lower than 1 contacts the slurry containing the ceramic particles for a first time when the at least two elements that constitute the thermoelectric conversion material are precipitated.

Abstract: A thermoelectric device includes: a substrate; a first nanowire of a first conductive type, which is formed on one side of the substrate; a second nanowire of a second conductive type, which is opposed to the first nanowire; a high temperature part commonly connected to one end of the first nanowire and one end of the second nanowire; low temperature parts connected to the other end of the first nanowire and the other end of the second nanowire, respectively; an insulation layer formed on the first nanowire and the second nanowire; a first metal layer formed on a portion of the insulation layer over the first nanowire, so as to control an electric potential of the first nanowire; and a second metal layer formed on a portion of the insulation layer over the second nanowire, so as to control an electric potential of the second nanowire.

Abstract: A nitrogen-containing thermoelectric material, which has an element composition represented by: AlzGayInxMuRvOsNt??(A) or AlzGayInxMuRvDwNm??(B) (wherein M represents a transition element; R represents a rare earth element; D represents at least one element selected from elements of the Group IV or II; 0?z?0.7, 0?y?0.7, 0.2?x?1.0, 0?u?0.7, 0?v?0.05, 0.9?s+t?1.7, 0.4?s?1.2, 0?w?0.2 and 0.9?m?1.1; and x+y+z=1), and has an absolute value of a Seebeck coefficient of 40 ?V/K or more at a temperature of 100° C. or more. These thermoelectric materials comprise elements having low toxicity, are excellent in a heat resistance, a chemical resistance and the like, and have a high thermoelectric transforming efficiency.

Abstract: A thermoelectric conversion material contains a mixed oxide containing Zn, Ga, and In. The thermoelectric conversion material is one in which the mixed oxide further contains Al. The thermoelectric conversion material is one in which the relative density of the mixed oxide is not less than 80%. The thermoelectric conversion material is one in which at least a part of a surface of the mixed oxide is coated with a film. A thermoelectric conversion module is provided with a plurality of n-type thermoelectric conversion materials, a plurality of p-type thermoelectric conversion materials, and a plurality of electrodes electrically serially connecting the p-type thermoelectric conversion materials with the n-type thermoelectric conversion materials in an alternate arrangement, and at least one material of the plurality of n-type thermoelectric conversion materials is the aforementioned thermoelectric conversion material.

Abstract: A method for fabricating thermoelectric device is provided. The method comprises placing a first electrode in a die, forming a first interlayer on an upper surface of the first electrode; positioning a separating plate on an upper surface of the first interlayer to divide an inner space of the die into a plurality of cells, and depositing a first thermoelectric material on the first interlayer within a first fraction of the cells, and depositing a second thermoelectric material on the first interlayer within a second fraction of the cells, sintering the die contents, and removing the separating plate after sintering to obtain a ? shaped thermoelectric device.

Abstract: Disclosed is a new thermoelectric conversion material represented by the chemical formula 1: Bi1-xCu1-yO1-zTe, where 0?x<1, 0?y<1, 0?z<1 and x+y+z>0. A thermoelectric conversion device using said thermoelectric conversion material has good energy conversion efficiency.

Abstract: A thermoelectric material includes a multiple transition metal-doped type I clathrate crystal structure having the formula A8TMy11TMy22 . . . TMynnMzX46-y1-y2- . . . -yn-z. In the formula, A is selected from the group consisting of barium, strontium, and europium; X is selected from the group consisting of silicon, germanium, and tin; M is selected from the group consisting of aluminum, gallium, and indium; TM1, TM2, and TMn are independently selected from the group consisting of 3d, 4d, and 5d transition metals; and y1, y2, yn and Z are actual compositions of TM1, TM2, TMn, and M, respectively. The actual compositions are based upon nominal compositions derived from the following equation: z=8·qA?|?q1|y1?|?q2|y2? . . . ?|?qn|yn, wherein qA is a charge state of A, and wherein ?q1, ?q2, ?qn are, respectively, the nominal charge state of the first, second, and n-th TM.

Abstract: The present invention provides a thermoelectric conversion material composed of an oxide material represented by chemical formula A0.8-1.2Ta2O6-y, where A is calcium (Ca) alone or calcium (Ca) and at least one selected from magnesium (Mg), strontium (Sr), and barium (Ba), and y is larger than 0 but does not exceed 0.5 (0<y?0.5).

Abstract: Disclosed is a thermoelectric material which is represented by the following composition formula (1) or (2) and comprises as a major phase an MgAgAs type crystal structure: (Tia1Zrb1Hfc1)xNiySn100-x-y??composition formula (1); (Lnd(Tia2Zrb2Hfc2)1-d)xNiySn100-x-y??composition formula (2); (wherein a1, b1, c1, x and y satisfy the conditions of: 0<a1<1, 0<b1<1, 0<c1<1, a1+b1+c1=1, 30?x?35 and 30?y?35, and Ln is at least one element selected from the group consisting of Y and rare earth elements, and a2, b2, c2 and d satisfy the conditions of: 0?a2?1, 0?b2?1, 0?c2?1, a2+b2+c2=1 and 0<d?0.3).

Abstract: A multi-layer superlattice quantum well thermoelectric material comprising at least 10 alternating layers has a layer thickness of each less than 50 nm, the alternating layers being electrically conducting and barrier layers, wherein the layer structure shows no discernible interdiffusion leading to a break-up or dissolution of the layer boundaries upon heat treatment at a temperature in the range from 50 to 150° C. for a time of at least 100 hours and the concentration of doping materials in the conducting layers is 1018 to 1023 cm?3 and in the barrier layers is 1013 to 1018 cm?3.

Abstract: A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

Abstract: New thermoelectric materials comprise highly [111]-oriented twinned group IV alloys on the basal plane of trigonal substrates, which exhibit a high thermoelectric figure of merit and good material performance, and devices made with these materials.

Abstract: A method to suppress thermal conductivities of nitride films by using stacking faults and/or nano-scale In-composition fluctuation(s). Therefore, the present invention reduces thermal conductivity of nitride while keeping electrical conductivity high. In addition, In composition fluctuations can enhance the Seebeck coefficient through thermionic emission. The present invention further discloses a nitride based (e.g. GaN) thermoelectric lateral device with a short length.

Abstract: The invention is directed to a thermoelectric module that utilizes a glass-ceramic material in place of the alumina and aluminum nitride that are commonly used in such modules. The glass-ceramic has a coefficient of thermal expansion of <10×10?7/° C. The p- and n-type thermoelectric materials can be any type of such materials that can withstand an operating environment of up to 1000° C., and they should have a CTE comparable to that of the glass-ceramic. The module of the invention is used to convert the energy wasted in the exhaust heat of hydrocarbon fueled engines to electrical power.

Abstract: The invention is a thermoelectric device fabricated by growing a single crystal AlInN semiconductor material on a substrate, and a method of fabricating same. In a preferred embodiment, the semiconductor material is AlInN grown on and lattice-matched to a GaN template on a sapphire substrate, and the growth is performed using metalorganic vapor phase epitaxy (MOVPE).

Abstract: A thermoelectric device includes: a first region; a second region; and a thermoelectric body disposed between the first region and the second region, where the thermoelectric body includes a vacancy.

Abstract: A set of electrical connector pins for a thermocouple includes two materially similar conductor pairs, each conductor pair having conductors composed of a different material, and carried by an electrically insulating connector housing. The different materials of the conductor pairs provide a partial compensation to the thermocouple EMF developed between the hot junction and the cold junction when engaged thereto for the different type thermocouples. The conductors of each pair are operable to engage with two thermoelement conductors that form a thermocouple of differing types. The thermocouples provide a hot junction electrical interconnection therebetween at one end and are coupled to a cold junction at another end.

Abstract: Systems are provided for measuring temperature in a semiconductor processing chamber. Embodiments provide a multi-junction thermocouple comprising a first junction and a second junction positioned to measure temperature at substantially the same portion of a substrate. A controller may detect failures in the first junction, the second junction, a first wire pair extending from the first junction, or a second wire pair extending from the second junction. The controller desirably responds to a detected failure of the first junction or first wire pair by selecting the second junction and second wire pair. Conversely, the controller desirably responds to a detected failure of the second junction or second wire pair by selecting the first junction and first wire pair. Systems taught herein may permit accurate and substantially uninterrupted temperature measurement despite failure of a junction or wire pair in a thermocouple.

Abstract: A nanocomposite thermoelectric material, a thermoelectric element including the nanocomposite thermoelectric material, and a thermoelectric module including the thermoelectric element are disclosed herein. The nanocomposite thermoelectric material includes highly electrically conductive nano metallic particles that are uniformly dispersed in a thermoelectric material matrix. Thus, the nanocomposite thermoelectric material has high thermoelectric performance, and thus, may be used in a wide range of thermoelectric elements and thermoelectric modules.

Abstract: A thermoelectric conversion material contains a metal oxide comprising M1, M2 and oxygen, wherein M1 is at least one selected from the group consisting of Ca, Sr and Ba and may contain an element selected from the group consisting of Li, Na, K, Mg, La, Ce, Nd, Sm, Bi and Pb, and wherein M2 comprises Cu as an essential element and may contain an element selected from the group consisting of Ti, V, Cr, Mn, Fe, Co and Ni. The mole ratio of M2 to M1 (M2/M1) is 1.2 to 2.2.

Abstract: The invention relates to a thermoelectrically active p- or n-conductive semiconductor material constituted by a compound of the general formula (I) (PbTe)1?x(Sn2±ySb2±zTe5)x??(I) with 0.0001?x?0.5, 0?y<2 and 0?z<2, wherein 0 to 10% by weight of the compound may be replaced by other metals or metal compounds, wherein the semiconductor material has a Seebeck coefficient of at least |S|?60 ?V/K at a temperature of 25° C. and electrical conductivity of at least 150 S/cm and power factor of at least 5 ?W/(cm·K2), further relates to a process for the preparation of such semiconductor materials, as well as to generators and Peltier arrangements containing them.

Abstract: The invention describes a novel thermoelectric composite material containing electrically conductive polymeric fibrils in a polymer matrix with a high thermoelectric coefficient. The invention also includes a thermoelectric device using the composite. The invention also includes a thermoelectric device containing a thermoelectric layers and a thermoelectric device in which a thermal barrier isolates a thermoelectric layer from a structurally supporting substrate. The thermoelectric devices can be used to generate electricity or to control temperature.

Abstract: A process for the fabrication of high efficiency thermoelectric materials using non-equilibrium synthesis routes is described. In one embodiment a molten alloy comprising a predetermined ratio of elements which will constitute the thermoelectric material is quenched at a cooling rate in excess of, for example, 105 or 106 K/s using a process such as melt spinning. The rapidly solidified particles are then placed into a mold having the desired size and shape. The particles in the mold are simultaneously compressed and sintered at elevated temperatures for a short duration using, for example, hot pressing or spark plasma sintering. The overall process provides improved microstructural control and greatly expands the accessible phase space, permitting the formation of dense, single-phase structures with nanosized grain boundaries and minimal or no impurity segregation.

Abstract: A thermoelectric element formed of a sintered body of a semiconductor comprising at least two kinds of elements selected from the group consisting of Bi, Te, Se and Sb, and having a micro-Vickers' hardness of not smaller than 0.5 GPa. The thermoelectric element has a hardness of not smaller than 0.5 GPa, and exhibits a large resistance against deformation, and is not easily broken by deformation. As a result, breakage due to deformation is prevented and a highly reliable thermoelectric element is realized even when a shape factor which is a ratio of the sectional area of the thermoelectric element to the height thereof, is increased and even when the element density is increased.

Abstract: A thermoelectric conversion module is formed by bonding a P-type thermoelectric conversion material and an N-type thermoelectric conversion material together with an insulating material including spherical ceramic grains having an index of grain size dispersion, 3CV, of about 20% or less interposed therebetween. The P-type thermoelectric conversion material and the N-type thermoelectric conversion material are electrically connected to each other in a region other than a region in which the P-type thermoelectric conversion material and the N-type thermoelectric conversion material are bonded together with the insulating material interposed therebetween. The spherical ceramic grains have an average grain size of about 0.05 mm to about 0.6 mm, and the insulating material is an insulating glass material.

Abstract: A thermoelectric composite including a thermoelectric material matrix, a plurality of ceramic nanoparticles, and a bipolar dispersant, wherein the bipolar dispersant bonds the ceramic nanoparticles to the thermoelectric material matrix.

Abstract: The invention disclosed herein relates to thermoelectrically-active p-type Zintl phase materials as well as devices utilizing such compounds. Such thermoelectric materials and devices may be used to convert thermal energy into electrical energy, or use electrical energy to produce heat or refrigeration. Embodiments of the invention relate to p-type thermoelectric materials related to the compound Yb14MnSb11.

Abstract: A thermoelectric material has a composition expressed by (TipHfqZr1-p-q)xCoy(Sb1-rSnr)100-x-y (0.1<p?0.3, 0.1<q?0.3, 0.1<r?0.8, 30?x?35 atomic %, and 30?y?35 atomic %), and includes a phase having an MgAgAs crystal structure as a main phase.

Abstract: The present invention relates to a high-temperature thermoelectric couple and the method for making the same. The method requires a very small number of fabrication steps. It includes an act of fabricating an n-type leg that, in a stacked configuration, includes a low electrical contact resistance metallization foil that is connected to each of the two sides of Lanthanum Telluride via a thin metallic adhesion layer. Additionally, a p-type leg is fabricated that, in a stacked configuration, includes a low electrical contact resistance metallization foil that is connected to each of the two sides of 14-1-11 Zintl. Finally, CTE-matched, low electrical and thermal resistance plate interconnects are used for each of the two legs to interface with the heat source and heat sink and form an electrical connection.

Abstract: A process for producing bulk thermoelectric compositions containing nanoscale inclusions is described. The thermoelectric compositions have a higher figure of merit (ZT) than without the inclusions. The compositions are useful for power generation and in heat pumps for instance.

Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Abstract: A thermoelectric material includes a multiple transition metal-doped type I clathrate crystal structure having the formula A8TMy11TMy22 . . . TMynnMzX46-y1-y2- . . . -yn-z. In the formula, A is selected from the group consisting of barium, strontium, and europium; X is selected from the group consisting of silicon, germanium, and tin; M is selected from the group consisting of aluminum, gallium, and indium; TM1, TM2, and TMn are independently selected from the group consisting of 3d, 4d, and 5d transition metals; and y1, y2, yn and Z are actual compositions of TM1, TM2, TMn, and M, respectively. The actual compositions are based upon nominal compositions derived from the following equation: z=8·qA?|?q1|y1?|?q2|y2? . . . ?|?qn|yn, wherein qA is a charge state of A, and wherein ?q1, ?q2, ?qn are, respectively, the nominal charge state of the first, second, and n-th TM.

Abstract: New thermoelectric materials and devices are disclosed for application to high efficiency thermoelectric power generation. New functional materials based on oxides, rare-earth-oxides, rare-earth-nitrides, rare-earth phosphides, copper-rare-earth oxides, silicon-rare-earth-oxides, germanium-rare-earth-oxides and bismuth rare-earth-oxides are disclosed. Addition of nitrogen and phosphorus are disclosed to optimize the oxide material properties for thermoelectric conversion efficiency. New devices based on bulk and multilayer thermoelectric materials are described. New devices based on bulk and multilayer thermoelectric materials using combinations of at least one of thermoelectric and pyroelectric and ferroelectric materials are described. Thermoelectric devices based on vertical pillar and planar architectures are disclosed. The advantage of the planar thermoelectric effect allows utility for large area applications and is scalable for large scale power generation plants.

Abstract: An anisotropically elongated thermoelectric nanocomposite includes a thermoelectric material.

Abstract: Alumina as a sublimation suppression barrier for a Zintl thermoelectric material in a thermoelectric power generation device operating at high temperature, e.g. at or above 1000K, is disclosed. The Zintl thermoelectric material may comprise Yb14MnSb11. The alumina may be applied as an adhesive paste dried and cured on a substantially oxide free surface of the Zintl thermoelectric material and polished to a final thickness. The sublimation suppression barrier may be finalized by baking out the alumina layer on the Zintl thermoelectric material until it becomes substantially clogged with ytterbia.

Abstract: A thermoelectric material, and a thermoelectric element and a thermoelectric module including the thermoelectric material are disclosed. The thermoelectric material may have improved thermoelectric properties by irradiating the thermoelectric material with accelerated particles such as protons, neutrons, or ion beams. Thus, the thermoelectric material having excellent thermoelectric properties may be efficiently applied to various thermoelectric elements and thermoelectric modules.

Abstract: A composite material of complex alloy is provided and it is the Ceramic-Metal Composite based on a thermoelectric material filled with ceramic material. The composite material is represented by the following general formula (I). A1?xBx ??(I) In the general formula (I), 0.05?X?0.2; A represents a Half-Heusler thermoelectric material and its proportional composition is represented with the following formula (II). (Tia1Zrb1Hfc1)1?y?zNiy Snz ??(II) In the general formula (II), 0<a1<1, 0<b1<1, 0<c1<1, a1+b1+c1=1, 0.25?y?0.35, and 0.25?z?0.35; B represents at least one element selected from a group of C, O, and N.

Abstract: A thermoelectric material includes a composition represented by the following formula (A): (Tia1Zrb1Hfc1)xNiySn100-x-y??(A) where 0<a1<1, 0<b1<1, 0<c1<1, a1+b1+c1=1, 30?x?35, and 30?y?35. The composition includes at least two MgAgAs crystal phases different in a lattice constant, and, assuming that X-ray diffraction peak intensity from a (422) diffraction plane of a first MgAgAs crystal phase having a smallest lattice constant and X-ray diffraction peak intensity from a (422) diffraction plane of a second MgAgAs crystal phase having a largest lattice constant be I1 and I2, respectively, a value of I1/(I1+I2) is in a range of 0.2 to 0.8.

Abstract: A substrate (1) for thermoelectric conversion modules has a ceramic material as a main component and has flexibility. A thermoelectric conversion module (2) has a plurality of thermoelectric elements (3, 4) arranged in the longitudinal direct of the substrate (1), at least on one surface of the substrate (1), so that the longitudinal directions of the thermoelectric elements (3, 4) are along the width direction of the substrate (1). Electrodes (5), which electrically connect the thermoelectric elements (3, 4) in series, are arranged on the end portions of the thermoelectric elements (3, 4).

Abstract: A multiphase thermoelectric material includes a titania-based semiconducting phase and a half-metal conducting phase. The multiphase thermoelectric material is advantageously a nanocomposite material wherein the constituent phases are uniformly distributed and have crystallite sizes ranging from about 10 nm to 800 nm. The titania-based semiconducting phase can be a mixture of sub-stoichiometric phases of titanium oxide that has been partially reduced by the half-metal conducting phase. Methods of forming a multiphase thermoelectric material are also disclosed.

Abstract: The present invention provides an electrically conductive paste for connecting thermoelectric materials, the paste comprising a specific powdery oxide and at least one powdery electrically conductive metal selected from the group consisting of gold, silver, platinum, and alloys containing at least one of these metals. By connecting a thermoelectric material to an electrically conductive substrate with the electrically conductive paste of the invention, a suitable electroconductivity is imparted to the connecting portion of the thermoelectric element. Further, the thermal expansion coefficient of the connecting portion can be made close to that of the thermoelectric material. Therefore, even when high-temperature power generation is repeated, separation at the connecting portion is prevented and a favorable thermoelectric performance can be maintained.

Abstract: A thermoelectric conversion material having an excellent thermoelectric conversion property and excellent in mechanical strength, a method for producing the same, and a thermoelectric conversion device using the same are provided. A thermoelectric conversion material includes an oxide for thermoelectric conversion material and an inorganic substance wherein the inorganic substance does not react with the oxide for thermoelectric conversion material under conditions of pressure: 950 hPa to 1050 hPa and temperature: 900° C. A method for producing a thermoelectric conversion material includes the steps (a1) and (a2): (a1) forming a mixture of an oxide for thermoelectric conversion material and an inorganic substance to obtain a green body, (a2) sintering the green body in air at 800° C. to 1700° C.

Abstract: The invention disclosed herein relates to thermoelectrically-active p-type Zintl phase materials as well as devices utilizing such compounds. Such thermoelectric materials and devices may be used to convert thermal energy into electrical energy, or use electrical energy to produce heat or refrigeration. Embodiments of the invention relate to p-type thermoelectric materials related to the compound Yb14MnSb11.

Abstract: A thermoelectric conversion element, a thermoelectric conversion module, and a method for producing a thermoelectric conversion element are provided, each of the element and the module having a low contact resistance between a p-type thermoelectric conversion material and an n-type thermoelectric conversion material and being capable of being used at high temperatures without deterioration due to oxidation. A p-type oxide thermoelectric conversion material is primarily made of a substance having a layered perovskite structure represented by the formula: A2BO4, wherein A includes at least La, and B represents at least one element including at least Cu. An n-type oxide thermoelectric conversion material is primarily made of a substance having a layered perovskite structure represented by the formula: D2EO4, wherein D includes at least one of Pr, Nd, Sm, and Gd, and E represents at least one element including at least Cu.

Abstract: A bulk thermoelectric material having a structure in which migration of carriers is not inhibited but phonons are scattered is described. The bulk thermoelectric material includes: a bulk crystalline thermoelectric material matrix; and nanoparticles coated with a conductive material within the thermoelectric material matrix.