Abstract: A thermoelectric material having large thermoelectric figure of merit is provided. A thin film comprising nanometer-sized particles having their diameters distributing within the range of 0.5 nm though 100 nm both inclusive is formed by depositing the nanometer-sized particles on a substrate, or dispersing the particles in a solid matrix material or solution thereby to form a thin film. In the thin film, a band gap due to quantum confinement effect is generated in each of the particles and electrical conduction occurs by that at least a part of the particles supply carriers. Accordingly, thermal conductivity ? as well as electrical resistivity ? and Seebeck coefficient S all of which are factors of thermoelectric figure of merit can be independently controlled, and it is possible to get a thermoelectric material having large dimensionless thermoelectric figure of merit ZT such as beyond 1.5.

Abstract: The present invention provides a thermoelectric conversion material including a half-Heusler alloy represented by the formula QR(L1-pZp), where Q is at least one element selected from group 5 elements, R is at least one element selected from cobalt, rhodium and iridium, L is at least one element selected from tin and germanium, Z is at least one element selected from indium and antimony, p is a numerical value that is equal to or greater than 0 and less than 0.5. A preferable example of the half-Heusler alloy is NbCo(Sn1-pSbp). The thermoelectric conversion material according to the present invention is n-type, and therefore, it is desired that the material is combined with a p-type thermoelectric conversion material to make a thermoelectric conversion element.

Abstract: An apparatus and system is presented for partially compensating the cold junction of a thermocouple system using low cost semi-compensated conductors of system components accommodating various thermocouple types. The thermocouple system, comprises a thermocouple portion comprising two thermocouple types, each type composed of two different thermoelectric materials joined to form a hot junction, a semi-compensation portion comprising two substantially similar conductor pairs, each composed of a different material, wherein one conductor of each pair is composed of a material different than the thermoelectric materials of the respective thermocouple type of the thermocouple portion.

Abstract: Compounds are expressed by general formula of AxBC2−y where 0≦x≦2 and 0≦y<1, and have CdI2 analogous layer structures; A-site is occupied by at least one element selected from the group consisting of Li, Na, K, Rb, Cs, Mg, Ca, Sr, Ba, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Ir, Pt, Au, Sc, rare earth elements containing Y, B, Al, Ga, In, Tl, Sn, Pb and Bi; B-site is occupied by at least one element selected from the group consisting of Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W, Ir, and Sn; C-site is occupied by at least one element selected from the group consisting of S, Se and Te; the compounds exhibit large figure of merit so as to be preferable for thermoelectric generator/refrigerator.

Abstract: The invention aims to provide a thermoelectric conversion material of &bgr;-iron disilicides that performs &bgr;-phase transformation in as a short time as just the industrially useful level. Moreover, the invention aims to provide a thermoelectric conversion material of &bgr;-iron disilicides having a low heat conductivity and a high thermoelectric conversion efficiency without changing Seebeck coefficient and resistivity, and a thermoelectric conversion element using the material. Specifically, a thermoelectric conversion material of &bgr;-iron disilicides containing dopant and at least one selected from at least Sn and Pb and a thermoelectric conversion element using the material are provided.

Abstract: A substrate of which the crystal planes are orientated perpendicular to a main surface thereof and made of the same kind of ion is prepared. Then, film forming operation is performed on the main surface of the substrate to epitaxially grow a Fe—Si based thin film thereon.

Abstract: Grain oriented ceramics constituted of a polycrystalline body of a layered cobaltite in which a {001} plane of each grain constituting the polycrystalline body has an average orientation degree of 50% or more by the Lotgering's method. In this case, the layered cobaltite is preferably a layered calcium cobaltite expressed by the following general formula: {(Ca1−xAx)2CoO3+&agr;} (CoO2+&bgr;)y (where A represents one or more elements selected among an alkali metal, an alkaline earth metal and Bi, 0≦×≦0.3, 0.5≦y≦2.0, and 0.85≦{3+&agr;+(2+&bgr;)y}/(3+2y)≦1.15). Such grain oriented ceramics are obtained by molding a mixture of the first powder constituted of a Co(OH)2 platelike powder and the second powder constituted of CaCO3 and the like such that a developed plane of the platelike powder is oriented, and by heating the green body at a predetermined temperature.

Abstract: A thermoelectric nanogranular material with an enhanced Seebeck coefficient is provided. The thermoelectric nanogranular material includes particles having a grain size d. The grain size d is characterized by the relationship mfp/2<d<5mfp, where mfp is the phonon-limited mean free path of an equivalent bulk thermoelectric material prior to processing the bulk thermoelectric material into the thermoelectric nanogranular material having a grain size d. A method of making a thermoelectric nanogranular material is also provided. The method includes preparing a bulk thermoelectric material, reducing the bulk thermoelectric material into a powder, and filtering the powder to retain only those particles having a grain size d. The method also includes pressing the retained particles at a predetermined pressure and sintering the pressed particles at a predetermined temperature for a predetermined period of time in a predetermined atmosphere.

Abstract: In high-tech fields such as electronics, the development of new high performance materials which differ from conventional materials has received much attention. An object of the present invention is to provide a clathrate compound which can be used as a thermoelectric material, a hard material, or a semiconductor material. Atoms of an element from group 4B of the periodic table are formed into a clathrate lattice, and a clathrate compound is then formed in which specified doping atoms are encapsulated within the clathrate lattice, and a portion of the atoms of the clathrate lattice are substituted with specified substitution atoms. Suitable doping atoms are atoms from group 1A, group 2A, group 3A, group 1B, group 2B, group 3B, group 4A, group 5A, group 6A, and group 8, and suitable substitution atoms are atoms from group 1A, group 2A, group 3A, group 1B, group 2B, group 3B, group 5A, group 6A, group 7A, group 5B, group 6B, group 7B, and group 8 of the periodic table.

Abstract: A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a BiTe alloy-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component.

Abstract: A phase change material is made by the process including the steps of providing a composition of a metal nitrate and water and adding tetraborate. This phase change material may be used in a heat battery.

Abstract: The invention provides a thermoelectric conversion material which is low toxic and can be used at a high temperature of 500° C. or higher without variation in performance, and a thermoelectric conversion device containing the material. The thermoelectric conversion material is formed of an oxide represented by (Ca3-xMx)Co4O9 (M: Sr or Ba, 1.2>x>0.5).

Abstract: The present invention provides the novel thermoelectric materials having, in combination, processability and excellent thermoelectric characteristics, the thermoelectric materials being able to provide n-type thermoelectric characteristics in accordance with the nature of the employed inorganic thermoelectric materials; a thermoelectric device employing the materials; and a method for producing the thermoelectric materials.

Abstract: An autonomous sensor system is provided for powering sensors using thermoelectric modules driven by thermal energy. The system includes solid-state thermoelectric (TE) modules for the conversion of thermal energy to electrical energy. The TE modules are composed of p-type and n-type semiconductors that are interdigitated so that the p-type and n-type elements form thermocouples. The TE modules derive electrical power from thermal energy available in the immediate environment. The system also includes sensors that are powered by the TE module, wherein a corresponding free space signal is generated.

Abstract: A method of forming thermoelectric materials includes combining at least one P-type extrusion with at least one N-type extrusion to form a first P/N-type billet. The P/N-type billet may be extruded to form a first P/N-type extrusion having at least one P-type region, and at least one N-type region. The P/N-type extrusion may be segmented into a plurality of P/N-type extrusion segments. In a particular embodiment, a plurality of the P/N-type extrusion segments may be combined to form a second P/N-type billet. The second P/N-type billet may be extruded to form a second P/N-type extrusion having a second plurality of P-type regions and a second plurality of N-type regions.

Abstract: This invention provides a complex oxide comprising the features of : (i) being represented by the formula:(A0.4B0.1M0.1)x/0.6Co2Oy wherein A and B are elements differing from each other, each represents Ca, Sr or Ba, M represents Bi, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Yb or Lu, 1.7≦x≦2, and 3.8≦y≦5, (ii) having a Seebeck coefficient of 100 &mgr;V/K or more at a temperature of 100 K (absolute temperature) or higher and (iii) having an electrical resistivity of 10 m&OHgr;cm or less at a temperature of 100 K (absolute temperature) or higher. The complex oxide of the invention is a material composed of low-toxicity elements existing in large amounts, the material having superior heat resistance and chemical durability and a high thermoelectric conversion efficiency in a temperature range of 600 K or higher which falls in the temperature range of waste heat.

Abstract: A thermoelectric power generator is provided capable of generating electric power from solar heat, geothermal heat or exhaust heat of low or medium temperature. The thermoelectric power generator operates via a working mechanism where a slightly hydrated sulfide semiconductor layer, having one side in contact with a low Fermi level redox reaction and having the other side in contact with a high Fermi level reaction generated by reactive metal cathode, allows electron transfer from the redox reaction into the cathode. This is accomplished by a thermal excitation step between both energy bands followed by a charge separation step driven by the internal electric field. The difference between the Fermi levels of the energy bands results in a useful electromotive ability.

Abstract: A thermoelectric material having a high Seeback coefficient and a large power factor and excellent in shock resistance, thermal strain resistance, and formability, and a thermoelectric element are disclosed. The thermoelectric material and thermoelectric element is composed of a multilayered body made up of a laminar body of a semimetal, a metal, or a synthetic resin and a laminar body of a semimetal. The average thickness of the laminar bodies ranges from 0.3 nm to 1000 nm. Embodiments of the combination of the laminar bodies are Bi—Al, Bi-polyamide series resin, and Ag—Fe. Such a multilayered body is manufactured by forming an initial multilayered body composed of all the types of laminar bodies constituting the multilayered body and rolling or uniaxially pressing a stack of such initial multilayered bodies.

Abstract: A thermoelectric module comprising an N-type thermoelectric element having excellent characteristics in air atmosphere even when the temperature rises to a medium-to-high temperature region of about 500° C. and, further, improving the conversion efficiency of, a thermoelectric module, by the combination of an excellent P-type thermoelectric material and an excellent n-type thermoelectric material containing a compound having a skutterudite structure, the module comprising an N-type thermoelectric elements each containing a compound having a skutterudite structure, P-type thermoelectric elements each connected directly or by way of a metal member to the N-type thermoelectric elements and containing an Mn—Si series compound.

Abstract: A high-performance thermoelectric conversion element using an Si-group thermoelectric conversion material, and an thermoelectric conversion element capable of providing a high-out-put power by improving a power generating efficiency, wherein the thermal expansion coefficient of an electrode material is set to up to 10 ppm/K in order to provide a good electrode joining between a p-type thermoelectric conversion material and a n-type thermoelectric conversion material consisting of an Si-group thermoelectric conversion material to thereby ease thermal stress and prevent cracking and breaking at a joining portion, and, in joining, a brazing filler material selected according to a working temperature range is interposed to thereby provide good joining characteristics, reduce an output loss, and improve a heat resistance and a heat-cycle resistance.

Abstract: A high-efficiency thermoelectric unicouple is used for power generation. The unicouple is formed with a plurality of legs, each leg formed of a plurality of segments. The legs are formed in a way that equalizes certain aspects of the different segments. Different materials are also described.

Abstract: A thermoelectric material that exhibits enhanced thermoelectric power, and thus an improvement in the thermoelectric figure of merit. Bismuth, as elemental bismuth, a bismuth alloy, a bismuth intermetallic compound, a mixture of these, or any of these including a dopant, is embedded in the pores of a host material having an average pore size in the range of about 5-15 nm. A method of making a composite thermoelectric material is also provided in which a porous host material is provided having an average pore size of about 5-15 nm, and a vapor of a bismuth-based material is caused to flow into the pores from a vapor inlet side of the host material to a vapor outlet side. The host material is then cooled from the vapor outlet side to progressively condense the vapor in the holes in the direction from the outlet side to the inlet side to progressively form nanowires of the bismuth-based material in the pores.

Abstract: A thermoelectric conversion unit comprising a thermoelectric conversion device 1 having a cleavage plane 2 and electrodes 3 formed on a pair of opposing surfaces of the thermoelectric conversion device 1, the angle subtended by the electrode-forming surfaces 4 of the thermoelectric conversion device 1 and by the cleavage plane 2 being not smaller than 45 degrees, the surface roughness Ra on the electrode-forming surfaces 4 being from 0.1 to 5 &mgr;m, and the electrodes 3 having a thickness larger than a maximum surface roughness Rmax of the electrode-forming surfaces 4. The thermoelectric conversion unit features a high adhesion strength between the thermoelectric conversion device 1 and the electrodes 3, and high reliability.

Abstract: A class of thermoelectric compounds based on the skutterudite structure with heavy filling atoms in the empty octants and substituting transition metals and main-group atoms. High Seebeck coefficients and low thermal conductivities are achieved in combination with large electrical conductivities in these filled skutterudites for large ZT values. Substituting and filling methods are disclosed to synthesize skutterudite compositions with desired thermoelectric properties. A melting and/or sintering process in combination with powder metallurgy techniques is used to fabricate these new materials.

Abstract: A carrier pocket engineering technique used to provide superlattice structures having relatively high values of the three-dimensional thermoelectric figure of merit (Z3DT) is described. Also described are several superlattice systems provided in acordance with the carrier pocket engineering technique. Superlattice structures designed in accordance with this technique include a plurality of alternating layers of at least two different semiconductor materials. First ones of the layers correspond to barrier layers and second ones of the layers correspond to well layers but barrier layers can also work as well layers for some certain carrier pockets and vice-versa. Each of the well layers are provided having quantum well states formed from carrier pockets at various high symmetry points in the Brillouin zone of the structure to provide the superlattice having a relatively high three-dimensional thermoelectric figure of merit.

Abstract: Preferred electrode devices (10) including a substrate (11) and cathode (13) and anode material (12) coated thereon in discreet locations are described. The cathode materials desirably include multiple layers of thin metal films (14). Preferred cell devices including conductive elements and a solid state source of charged ions for migration into and through the conductive elements are also described.

Abstract: Quantum-dot superlattice (QLSL) structures having improved thermoelectric properties are described. In one embodiment, PbSexTe1-x/PbTe QDSLs are provided having enhanced values of Seebeck coefficient and thermoelectric figure of merit (ZT) relative to bulk values. The structures can be combined into multi-chip devices to provide additional thermoelectric performance.

Abstract: A normal-insulator-superconductor (NIS) microrefrigerator in which a superconducting single crystal is both the substrate and the superconducting electrode of the NIS junction. The refrigerator consists of a large ultra-pure superconducting single crystal and a normal metal layer on top of the superconducting crystal, separated by a thin insulating layer. The superconducting crystal can be either cut from bulk material or grown as a thick epitaxial film. The large single superconducting crystal allows quasiparticles created in the superconducting crystal to easily diffuse away from the NIS junction through the lattice structure of the crystal to normal metal traps to prevent the quasiparticles from returning across the NIS junction. In comparison to thin film NIS refrigerators, the invention provides orders of magnitude larger cooling power than thin film microrefrigerators.

Abstract: A thermoelectric element formed of a sintered body of a semiconductor comprising at least two kinds of elements selected from the group consisting of Bi, Te, Se and Sb, and having a micro-Vickers' hardness of not smaller than 0.5 GPa. The thermoelectric element has a hardness of not smaller than 0.5 GPa, and exhibits a large resistance against deformation, and is not easily broken by deformation. As a result, breakage due to deformation is prevented and a highly reliable thermoelectric element is realized even when a shape factor which is a ratio of the sectional area of the thermoelectric element to the height thereof, is increased and even when the element density is increased.

Abstract: A high-efficiency thermoelectric unicouple is used for power generation. The unicouple is formed with a plurality of legs, each leg formed of a plurality of segments. The legs are formed in a way that equalized certain aspects of the different segments. Different materials are also described.

Abstract: The thermoelectric properties (resistivity, thermopower and thermal conductivity) of single crystals of the low-dimensional pentatelluride materials are disclosed. The pentatellurides are well suited for use in thermoelectric devices. In general, the pentatellurides include hafnium pentatelluride and zirconium pentatelluride, which can both be substituted with selective amounts of various metals, including titanium, selenium, and antimony.

Abstract: A multipoint thermocouple for sensing temperature. The thermocouple comprises a sheath having a plurality of conductor pairs disposed within the sheath. Each conductor pair has two conductors of dissimilar materials joined at a unique junction point along the sheath. The unique junction points permit sensing of temperature at different locations along the length of the multipoint thermocouple.

Abstract: This invention provides a complex oxide comprising the features of: (i) being represented by the formula: (A0.4B0.1M0.1)x/0.6Co2Oy wherein A and B are elements differing from each other, each represents Ca, Sr or Ba, M represents Bi, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Yb or Lu, 1.7≦x≦2, and 3.8≦y≦5, (ii) having a Seebeck coefficient of 100 &mgr;V/K or more at a temperature of 100 K (absolute temperature) or higher and (iii) having an electrical resistivity of 10 m&OHgr;cm or less at a temperature of 100 K (absolute temperature) or higher. The complex oxide of the invention is a material composed of low-toxicity elements existing in large amounts, the material having superior heat resistance and chemical durability and a high thermoelectric conversion efficiency in a temperature range of 600 K or higher which falls in the temperature range of waste heat.

Abstract: Compounds are expressed by general formula of AxBC2−y where 0≦x≦2 and 0≦y<1, and have CdI2 analogous layer structures; A-site is occupied by at least one element selected from the group consisting of Li, Na, K, Rb, Cs, Mg, Ca, Sr, Ba, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Ir, Pt, Au, Sc, rare earth elements containing Y, B, Al, Ga, In, Tl, Sn, Pb and Bi; B-site is occupied by at least one element selected from the group consisting of Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W, Ir, and Sn; C-site is occupied by at least one element selected from the group consisting of S, Se and Te; the compounds exhibit large figure of merit so as to be preferable for thermoelectric generator/refrigerator.

Abstract: A silicon-based polycrystal powder, which contains no more than 30 at % Ge, C, Sn, or another such element that does not generate carriers as well as an added element that does generate carriers, and which has a crystal structure including crystal grains made up of at least 80 at % silicon, and a grain boundary phase where at least one type of said added element is precipitated at the boundary of said crystal grains, is mixed with a clathrate compound powder with low thermal conductivity and electrical resistivity, and this mixture is subjected to hot compression molding, the product of which has a composite structure in which the particles of the clathrate compound polycrystals are disposed around the particles of the silicon-based polycrystals.

Abstract: Provided is an SiGe crystal having an improved performance index and excellent machinability as a material constituting a thermoelectric element, neither degradation in characteristics nor cracking occurring during use. Crystal grains forming the crystal are 5×10−5 mm3 or more in size.

Abstract: A high-efficiency thermoelectric unicouple is used for power generation. The unicouple is formed with a plurality of legs, each leg formed of a plurality of segments. The legs are formed in a way that equalizes certain aspects of the different segments. Different materials are also described.

Abstract: The present invention incorporates the generation of electricity with the vaporization of a cryogen such that all of the available heat is beneficially used. The heat is either converted to electricity thermoelectrically or the heat is absorbed by the cryogen to vaporize the cryogen into cryogenic vapor and to increase the internal energy of the energetic cryogenic vapor, which is capable of performing work.

Abstract: A class of thermoelectric compounds based on the skutterudite structure with heavy filling atoms in the empty octants and substituting transition metals and main-group atoms. High Seebeck coefficients and low thermal conductivities are achieved in combination with large electrical conductivities in these filled skutterudites for large ZT values. Substituting and filling methods are disclosed to synthesize skutterudite compositions with desired thermoelectric properties. A melting and/or sintering process in combination with powder metallurgy techniques is used to fabricate these new materials.

Abstract: A thermoelectric material that exhibits enhanced thermoelectric power, and thus an improvement in the thermoelectric figure of merit. Bismuth, as elemental bismuth, a bismuth alloy, a bismuth intermetallic compound, a mixture of these, or any of these including a dopant, is embedded in the pores of a host material having an average pore size in the range of about 5-15 nm. A method of making a composite thermoelectric material is also provided in which a porous host material is provided having an average pore size of about 5-15 nm, and a vapor of a bismuth-based material is caused to flow into the pores from a vapor inlet side of the host material to a vapor outlet side. The host material is then cooled from the vapor outlet side to progressively condense the vapor in the holes in the direction from the outlet side to the inlet side to progressively form nanowires of the bismuth-based material in the pores.

Abstract: The invention provides a thermoelectric conversion material which is low toxic and can be used at a high temperature of 500° C. or higher without variation in performance, and a thermoelectric conversion device containing the material. The thermoelectric conversion material is formed of an oxide represented by (Ca3-xMx)Co4O9 (M: Sr or Ba, 1.2>x>0.5).

Abstract: A composition is disclosed having the formula: (RBa2Cu3O7−&dgr;)x+(PrBa2Cu3O7−&dgr;)1−x wherein: R comprises Y, Ce, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and/or Lu; 0<x≦1; and &dgr; is such that the R Ba2Cu3O7−&dgr; component of the composition is in a metallic or transitional phase.

Abstract: In a generator comprising a p-doped or n-doped semiconductor material, said semiconductor material is at least one ternary material selecting from one of the following substance classes and formed by combining at least two compounds of the substance class: suicides, borides, germanides, tellurides, sulfides, selenides, antimonides, plumbides and semiconductor oxides.

Abstract: A method of preparing a substantially homogenous, alkali-metal silicon clathrate composition containing the silicon clathrate MxSi136 (3≦x≦24). The silicon clathrate is prepared by rapidly heating an alkali-metal silicide under a high vacuum to a decomposition temperature of at least 365° C. The produced silicon clathrates are in a substantially homogenous MxSi136 phase with only small amounts of a metallic silicon clathrate phase, MySi46. A method of reducing the alkali-metal content of a silicon clathrate MxSi136 (x>0) is also provided.

Abstract: It is an object of the present invention to provide a thermoelectric conversion material, and a thermoelectric conversion element that makes use of this material, which allow the Seebeck effect and the Nernst effect to be utilized synergistically, have a high Seebeck coefficient, and afford greater thermoelectromotive force.

Abstract: Improved Hg-containing superconducting films and thermoelectric materials are provided. The films are fabricated by annealing starting Tl-containing films (e.g., Tl-1212 or Tl-2212) in an Hg-vapor environment so as to cause a substitution of Tl by Hg without substantial alteration of the crystalline structure of the starting films. Preferably, a body comprising a substrate having an epitaxial Tl-containing film thereon is annealed under vacuum conditions with a Hg-based bulk; typical annealing conditions are 600-900° C. for a period of from about 1-20 hours. The final Hg-containing film products have a Jc of at least about 106 A/cm2 (100 K, OT) and a Xmin of up to about 50%. The thermoelectric materials are prepared by perturbing a crystalline precursor having a structure similar to the final material so as to cause a first molecule to be released from the precursor.

Abstract: A thermoelectric device with enhanced structured interfaces for improved cooling efficiency is provided. In one embodiment, the thermoelectric device includes a first thermoelement comprising a supetlattice of p-type thermoelectric material and a second thermoelement comprising superlattice of n-type thermoelectric material. The first and second thermoelements are electrically coupled to each other. The first thermoelement is proximate to, without necessarily being in physical contact with, a first array of electrically conducting tips at a discrete set of points. A planer surface of the second thermoelement is proximate to, without necessarily being in physical contact with, a second array of electrically conducting tips at a discrete set of points. The electrically conducting tips are coated with a material that has the same Seebeck coefficient as the material of the nearest layer of the superlattice to the tip.

Abstract: This invention provides a complex oxide comprising the features of: (i) being represented by the formula: Ca3-xRExCo4Oy wherein RE is a rare earth element, 0≦x≦0.5 and 8.5≦y≦10, (ii) having a Seebeck coefficient of 100 &mgr;V/K or more at a temperature of 300° C. or higher, and (iii) having an electric conductivity of 103 S/m or more at a temperature of 300° C. or higher. The complex oxide is composed of low-toxicity elements, excellent in heat resistance and chemical durability and high in thermoelectric conversion efficiency.

Abstract: The present invention allows optimum filling of void spaces typically found in skutterudite type crystal lattice structures associated with various semiconductor materials. Selective filling provides semiconductor materials which are particularly beneficial for use in fabricating thermoelectric devices for electrical power generation and/or cooling applications. By selectively filling a portion of the void spaces associated with skutterudite type crystal lattice structure, reductions in thermal conductivity of the resulting semiconducting material may be optimized while concurrently minimizing any reduction in electrical properties of the resulting semiconductor materials, thus maximizing the thermoelectric figure of merit for the associated thermoelectric device.

Abstract: A honeycomb-shaped electric element includes a honeycomb-shaped structural body, the honeycomb-shaped structural body including crossing partition walls defining a number of through-holes arranged thereamong, the through-holes being arranged in at least three lines extending laterally substantially in the same direction, wherein partition wall portions of the through-boles in the at least three lines are made of at least an electrically conductive material and an insulating material such that the partition wall portions of the through-holes made of the electrically conductive material and those of the insulating material are so arranged that a current flow passage may be continuously formed in the same direction as the continuous lines extend.