Abstract: With the thermo-electric conversion element according to the present invention, the power generating efficiency (in other words, the conversion efficiency) can be improved by inserting as metallic film made of either Ag, Al, or silver soldering material for the PN junction formation between the Si based P type and N type semiconductors and inserting a metallic film made of either Zn, Ni, Cu, Ag, Au, or Cu-30Zn at a connecting portion between the semiconductors and lead wires, so that the electromotive power and the thermo-electromotive force are not cancelled each other due to the Schottky barrier which is generated at the interfacial area between the metals and semiconductors. The desired thermo-electric conversion efficiency can be achieved by the material presented in this invention without any deterioration of the original thermo-electric properties.

Abstract: A p-type thermoelectric converting substance used as a p-type semiconductor in a thermoelectric converting module consisting essentially of a substance expressed by a chemical formula CoSbxSny or CoSbxGey (2.7<x<3.4, 0<y<0.4, x+y>3), and containing a small amount of oxygen z defined by 2(x+y−3)≧z. The amount of oxygen z is preferably limited such that it is not higher than 0.1 molecules per 1 molecule of Co. An alloy ingot consisting essentially of CoSbxSny or CoSbxGey (2.7<x<3.4, 0<y<0.4, x+y>3) is ground to obtain a raw material powder. Then, the powder is cast into a mold, and the mold is sintered under a non-oxidizing or reducing atmosphere. The thus obtained substance reveals p-conductivity in a stable manner over a wide temperature range, and has excellent thermoelectric converting properties.

Abstract: A method and device for transmitting thermal energy from the surface of the earth into deep space to assist in the alleviation of global warming. The method comprises arranging a thermal energy transmitting material over a terrestrial object, and, positioning said thermal energy transmitting material so that a transmitting surface thereof faces deep space, said material having spectral surface properties of high emissivity in a spectral band substantially transparent to the atmosphere of the earth. The device comprises a thermal energy transmitting material designed to cover a terrestrial object and positioned with a transmitting surface thereof facing deep space, said transmitting material having spectral surface properties of high emissivity in a spectral band substantially transparent to the atmosphere of the earth.

Abstract: An improved material for a thermoelectric device and thermoelectric systems incorporating the same.

Abstract: A thermoelectric semiconductor compound is provided whose performance index Z is remarkably improved without sacrificing Seebeck coefficient, electrical conductivity or thermal conductivity. The thermoelectric semiconductor compound includes a first thermoelectric semiconductor which is in the form of matrix and a second thermoelectric semiconductor which is in the form of particles dispersed in the matrix. The first thermoelectric semiconductor and the second thermoelectric semiconductor have a common element. The average diameter D of the dispersed particles complies with a formula of A<D<B, where A is the mean free path of a carrier in a single crystal of the second thermoelectric semiconductor and B is the mean free path of a long wave length phonon in the single crystal of the second thermoelectric semiconductor. A method for making the a thermoelectric semiconductor compound is provided.

Abstract: The present invention allows optimum filling of void spaces typically found in skutterudite type crystal lattice structures associated with various semiconductor materials. Selective filling of such void spaces in the associated lattice structure provides semiconductor materials which are particularly beneficial for use in fabricating thermoelectric devices for electrical power generation and/or cooling applications. By selectively filling a portion of the void spaces associated with skutterudite type crystal lattice structure, reductions in thermal conductivity of the resulting semiconducting material may be optimized while at the same time minimizing any reduction in electrical properties of the resulting semiconductor materials, which results in maximizing the thermoelectric figure of merit for the associated thermoelectric device.

Abstract: The present invention allows optimum filling of cavities or cages typically found in crystal lattice type structures associated with an inclusion complex such as formed by clathrate compounds. Filling such cavities or cages in the associated crystal lattice type structure provides semiconductor materials which are particularly beneficial for use in fabricating thermoelectric devices for electrical power generation and/or cooling applications. By filling the cavities or cages associated with clathrate compounds with selected metal and/or semi-metal atoms, reductions in thermal conductivity may be optimized while at the same time minimizing any reduction in electrical properties of the resulting semiconductor materials. As a result, the thermoelectric Figure of Merit for a thermoelectric device fabricated from such clathrate compounds is maximized.