Abstract: In one embodiment, a solar cell has base and emitter diffusion regions formed on the back side. The emitter diffusion region is configured to collect minority charge carriers in the solar cell, while the base diffusion region is configured to collect majority charge carriers. The emitter diffusion region may be a continuous region separating the base diffusion regions. Each of the base diffusion regions may have a reduced area to decrease minority charge carrier recombination losses without substantially increasing series resistance losses due to lateral flow of majority charge carriers. Each of the base diffusion regions may have a dot shape, for example.

Abstract: The optically pumped semiconductor according to the present invention is an optically pumped semiconductor that is a semiconductor of a perovskite oxide. The optically pumped semiconductor has a composition represented by a general formula: BaZr1-xMxO3-?, where M denotes at least one element selected from trivalent elements, x denotes a numerical value more than 0 but less than 0.8, and ? denotes an amount of oxygen deficiency that is a numerical value more than 0 but less than 1.5. The optically pumped semiconductor has a crystal system of a cubic, tetragonal, or orthorhombic crystal. When lattice constants of the crystal system are referred to as a, b, and c, provided that a?b?c, conditions that 0.41727 nm?a, b, c?0.42716 nm and a/c?0.98 are satisfied.

Abstract: The present invention provides improved devices such as transparent solar cells. This patent teaches a particularly efficient method of device manufacture based on incorporating the solar cell fabrication into the widely used, high temperature, Float Glass manufacture process.

Abstract: A photovoltaic device that includes a substrate and a nanowall structure disposed on the substrate surface. The device also includes at least one layer conformally deposited over the nanowall structure. The conformal layer(s) is at least a portion of a photoactive junction. A method for making a photovoltaic device includes generating a nanowall structure on a substrate surface and conformally depositing at least one layer over the nanowall structure thereby forming at least one photoactive junction. A solar panel includes at least one photovoltaic device based on a nanowall structure. The solar panel isolates such devices from its surrounding atmospheric environment and permits the generation of electrical power. Optoelectronic device may also incorporate a photovoltaic device based on a nanowall structure.

Abstract: A solar cell comprises a recrystallized active layer wherein the active layer has preferred characteristics.

Abstract: A photovoltaic solar cell including an upper electrode, a layer with light scattering and/or reflection properties, and a lower electrode. The layer with light scattering and/or reflection properties is located between the upper electrode and the lower electrode.

Abstract: A method of monolithically interconnecting electrical devices that isolates and interconnects the contacts of neighboring electrical devices such as thin film PV cells, without damaging the surrounding materials.

Abstract: A thin film photovoltaic device on a substrate is being realized by a method for manufacturing a p-i-n junction semiconductor layer stack with a p-type microcrystalline silicon layer, a p-type amorphous silicon layer, a buffer silicon layer comprising preferably intrinsic amorphous silicon, an intrinsic type amorphous silicon layer, and an n-type silicon layer over the intrinsic type amorphous silicon layer.

Abstract: The method for manufacturing a photovoltaic cell or a photovoltaic converter panel comprises depositing a layer of p-doped amorphous silicon using a gas mixture comprising silane, methane, hydrogen and trimethylboron in a ratio of 1:2:2:1.25. In particular, plasma-enhanced chemical vapor deposition is used for the deposition. The corresponding photovoltaic cells and photovoltaic converter panels are also described.

Abstract: A photovoltaic cell comprises an electrode layer (1b) of a transparent, electrically conductive oxide which is deposited upon a transparent carrier substrate (7b). There follows a contact layer (11b) which is of first type doped amorphous silicon and has a thickness of at most 10 nm. There follows a layer (26) of first type doped amorphous silicon compound which has a bandgap which is larger than the bandgap of the material of the addressed contact layer (11b). Subsequently to the first type doped amorphous silicon compound layer (2b) there follows a layer of intrinsic type silicon compound (3b) and a layer of second type doped silicon compound (5b).

Abstract: An exemplary system and method for forming a solar panel system includes manufacturing solar panel sheets via thin film solar technology that include a flashing overlap and a non-dry adhesive located on the bottom surface of the sheets such that the solar panel sheets form a moisture barrier on the roof while providing a renewable solar energy source. The solar panel system that forms a moisture barrier on the roof of a structure may include a non-glare surface treatment to provide the appearance of standard 30 year shingles. Additionally, the solar panel system may include a temperature/pressure/light transmissibility sensor system configured to notify a homeowner when the solar panel system is dirty, obscured, or should be changed to reverse current mode to melt snow or ice buildup.

Abstract: The invention relates to a heterojunction solar cell and a method for the production thereof. The heterojunction solar cell has an absorber layer made of silicon with a basic doping and at least one heterojunction layer of a doped semiconductor material whose band gap differs from that of the silicon of the absorber layer. The absorber layer has a doped layer at an interface directed toward the heterojunction layer, the doping concentration of said doped layer being greater than the basic doping concentration of the absorber layer. As a result of this doping profile, a field effect can be caused which prevents charge carrier pairs produced within the absorber layer from diffusing toward the interface between the absorber layer and the heterojunction layer and from recombining there.

Abstract: Photovoltaic cells with interconnects to an external circuit, as well as related components, systems, and methods, are disclosed.

Abstract: A photonic device, a method of making the device and a nano-scale antireflector employ a bramble of nanowires. The photonic device and the method include a first layer of a microcrystalline material provided on a substrate surface and a second layer of a microcrystalline material provided on the substrate surface horizontally spaced from the first layer by a gap. The photonic device and the method further include, and the nano-scale antireflector includes, the bramble of nanowires formed between the first layer and the second layer. The nanowires have first ends integral to crystallites in each of the first layer and the second layer. The nanowires of the bramble extend into the gap from each of the first layer and the second layer.

Abstract: Utilization of the near percolation plasmonic nanostructures near the photoconversion layer in photovoltaic device provide significant enhancement in the efficiency. Photovoltaic devices utilizing efficiency enhancement due to utilization of near percolation plasmonic nanostructures and methods of photovoltaic device fabrication provide an improved solar cells that can be used for power generation and other applications.

Abstract: A thin film solar cell is employed having a power generation layer formed with a microcrystalline silicon film including, in its plane, a first region and a second region in which a percentage of crystallization is lower than the first region and a carrier lifetime is higher than the first region.

Abstract: The present invention relates to a layer system (1) for thin-film solar cells and solar modules based on CIS-absorbers (4). The layer system (1) according to the invention has a buffer layer (4) made of In2(S1?x,Sex)3+?, wherein 0?x?1 and ?1???1. Additionally, the buffer layer (5) is amorphously designed. With this buffer layer (5), the disadvantages of CdS-buffers frequently used to date, namely toxicity and poor process integration, are overcome, whereby in addition to high efficiency, high long-term stability is also achieved; and thus again the disadvantages of conventional buffer layers alternative to CdS do not exist.

Abstract: A photovoltaic device includes a substrate having at least two surfaces and a multilayered film disposed on at least a portion of at least one surface of the substrate. Elongated nanostructures are disposed on the multilayered film. The device incorporates a top layer of the multilayered film contacting the elongated nanostructures that is a tunnel junction. The device has at least one layer deposited over the elongated nanostructures defining a portion of a photoactive junction. A solar panel includes at least one photovoltaic device. The solar panel isolates each such devices from its surrounding atmospheric environment and permits the generation of electrical power.

Abstract: Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

Abstract: This invention relates to compounds and compositions used to prepare semiconductor and optoelectronic materials and devices. This invention provides a range of compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, as well as devices and systems for energy conversion, including solar cells. In particular, this invention relates to molecular precursor compounds, precursor materials and methods for preparing photovoltaic layers and thin films thereof.

Abstract: A photovoltaic (PV) cell is disclosed. The PV cell comprises, a plurality of ultrafine structures electrically coupled to, and embedded within, a polycrystalline photo-active absorber layer comprising a p-type compound semiconductor.

Abstract: A solar cell module comprises a solar cell assembly and a reflecting back encapsulant that is laminated to the back non-sun-facing side of the solar cell assembly. The reflecting back encapsulant comprises a co-extrusion or extrusion coated multilayer sheet, and the multilayer sheet comprises a reflecting layer, a first tie layer and optionally a second tie layer that are co-extruded or extrusion coated on the reflecting layer. The multilayer sheet has a total thickness of about 2 to about 50 mil (about 51 to about 1270 ?m). The tie layer(s) comprise polymeric material(s) that have a melting temperature of about 80° C. to about 165° C. and an adhesion to glass of at least about 30 lb/inch when measured with the T-peel test. The reflecting layer has a thickness of about 1 to about 35 mil (about 25 to about 889 ?m); comprises a polymeric material having a melting temperature between 80° C. and 165° C.

Abstract: This invention relates to compounds and compositions used to prepare semiconductor and optoelectronic materials and devices. This invention provides a range of compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, as well as devices and systems for energy conversion, including solar cells. In particular, this invention relates to molecular precursor compounds, precursor materials and methods for preparing photovoltaic layers.

Abstract: Methods for fabricating solar cells without the need to perform gasification of metallurgical-grade silicon are disclosed. Consequently, the costs and health and environmental hazards involved in fabricating the solar or silicon grade silicon are being avoided. A solar cell structure comprises a metallurgical grade doped silicon substrate and a thin-film structure formed over the substrate to form a p-i-n junction with the substrate. The substrate may be doped p-type, and the thin film structure may be an intrinsic amorphous layer formed over the substrate and an n-type amorphous layer formed over the intrinsic layer.

Abstract: In order to improve photoelectric conversion properties of a silicon-based thin-film photoelectric converter to which a conductive SiOx layer is inserted to obtain an optical confinement effect, the silicon-based thin-film photoelectric converter according to the present invention includes an i-type photoelectric conversion layer of hydrogenated amorphous silicon or an alloy thereof, an i-type buffer layer made of hydrogenated amorphous silicon, and an n-type Si1-xOx layer (x is 0.25-0.6) stacked successively, wherein the buffer layer has a higher hydrogen concentration at its interface with and as compared with the photoelectric conversion layer and has a thickness of at least 5 nm and at most 50 nm. Accordingly, generation of silicon crystal phase parts and reduction of resistivity are promoted in the n-type Si1-xOx layer, contact resistance at the interface is reduced, and FF of the photoelectric converter is improved, so that the photoelectric converter achieves improved properties.

Abstract: The present invention discloses a solar cell integrating monocrystalline silicon and a SiGe film, which comprises an N-type amorphous silicon-germanium (SiGe) film formed on a P-type monocrystalline silicon substrate. The P-type monocrystalline silicon substrate has a roughened surface to capture sunlight. A transparent conductive layer is stacked on the N-type amorphous SiGe film. Metal electrodes are formed on the transparent conductive layer and penetrate the transparent conductive layer to contact the N-type amorphous SiGe film. A P-type polycrystalline SiGe film is formed on the backside of the P-type monocrystalline silicon substrate. A back surface field is arranged below the P-type polycrystalline SiGe film to prevent from the recombination of major carriers. A backside metal electrode layer is arranged below the back surface field to function as a backside electrode and decrease the contact resistance. Thereby, the present invention can effectively promote the absorption rate of solar energy.

Abstract: Methods for fabricating solar cells without the need to perform gasification of metallurgical-grade silicon are disclosed. Consequently, the costs and health and environmental hazards involved in fabricating the solar or silicon grade silicon are being avoided. A solar cell structure comprises a metallurgical grade doped silicon substrate and a thin-film structure formed over the substrate to form a p-i-n junction with the substrate. The substrate may be doped p-type, and the thin film structure may be an intrinsic amorphous layer formed over the substrate and an n-type amorphous layer formed over the intrinsic layer.

Abstract: A cell includes a substrate of a first conductive type, at least one emitter region of a second conductive type opposite to the first conductive type, and disposed at the substrate, a plurality of first electrodes electrically connected to the at least one emitter region, and at least one second electrode electrically connected to the substrate, wherein the substrate is a silicon substrate of a metallurgical grade.

Abstract: A stacked photovoltaic apparatus capable of improving the output characteristics is provided. This stacked photovoltaic apparatus comprises a second power generation unit including a second semiconductor layer having a first refractive index and a third semiconductor layer of an amorphous semiconductor functioning as a photoelectric conversion layer, an intermediate layer formed between a first power generation unit and the second power generation unit with a second refractive index and a reflection promotive layer formed between the intermediate layer and the second power generation unit with such a third refractive index that the difference between the third refractive index and the first refractive index is larger than the difference between the second refractive index and the first refractive index.

Abstract: Solar cells fabricated without gasification of metallurgical-grade silicon. The substrates are prepared by: melting metallurgical grade silicon in a furnace; solidifying the melted metallurgical grade silicon into an ingot; slicing the ingot to obtain a plurality of wafers; polishing and cleaning each wafer; depositing aluminum layer on backside of each wafer; depositing a layer of hydrogenated silicon nitride on front surface of each wafer; annealing the wafers at elevated temperature; removing the hydrogenated silicon nitride; and, removing the aluminum layer. The front surface may be textured prior to forming the solar cell. The solar cell structure comprises a metallurgical grade doped silicon substrate and a thin-film structure formed over the substrate to form a p-i-n junction with the substrate. The substrate may be doped p-type, and the thin film structure may be an intrinsic amorphous layer formed over the substrate and an n-type amorphous layer formed over the intrinsic layer.

Abstract: A photovoltaic device capable of suppressing reduction of the yield in production also when a transparent conductive film has small surface roughness is obtained. This photovoltaic device comprises a photovoltaic element including a transparent conductive oxide film having arithmetic mean deviation of the profile of not more than about 2 nm and a paste electrode, formed on the transparent conductive oxide film, containing at least a metal material and a resin material, while the resin material contains at least about 60 percent by weight and not more than about 100 percent by weight of epoxy resin.

Abstract: Solar cells and methods for their manufacture are disclosed. An exemplary method may include providing a semiconductor substrate and introducing dopant atoms to a front surface of the substrate. The substrate may be annealed to drive the dopant atoms deeper in the substrate to produce a p-n junction while also forming front and back passivation layers. A reflective surface is sputtered on the back surface of the solar cell. It protects and generates hydrogen to passivate one or more substrate-passivation layer interfaces at the same time as forming an anti-reflective layer on the front surface of the substrate. Fire-through of front and back contacts as well as metallization with contact connections may be performed in a single co-firing operation. Associated solar cells are also provided.

Abstract: Disclosed herein is a solar cell module, which includes a photovoltaic member, a back transparent substrate and an ink layer. The photovoltaic member is capable of converting light into electricity. The ink layer is disposed between the photovoltaic member and the transparent back substrate, and can be observed through the back transparent substrate. The ink layer may exhibit a colorful picture or pattern.

Abstract: A method and apparatus for forming solar cells is provided. In one embodiment, a photovoltaic device includes a first p-i-n junction cell formed on a substrate, wherein the p-i-n junction cell comprises a p-type silicon containing layer, an intrinsic type silicon containing layer formed over the p-type silicon containing layer, and a n-type silicon containing layer formed over the intrinsic type silicon containing layer, wherein the intrinsic type silicon containing layer comprises a first pair of microcrystalline layer and amorphous silicon layer.

Abstract: So as to improve large-scale industrial manufacturing of photovoltaic cells and of the respective converter panels at a photovoltaic cell with a microcrystalline layer of intrinsic silicon compound at least one of the adjacent layers of doped silicon material is conceived as a an amorphous layer.

Abstract: A method of making a crystalline film includes providing a film comprising seed grains of a selected crystallographic surface orientation on a substrate; irradiating the film using a pulsed light source to provide pulsed melting of the film under conditions that provide a mixed liquid/solid phase and allowing the mixed solid/liquid phase to solidify under conditions that provide a textured polycrystalline layer having the selected surface orientation. One or more irradiation treatments may be used. The film is suitable for use in solar cells.

Abstract: A photovoltaic device is provided. The photovoltaic device comprises an absorber layer comprising a p-type semiconductor, wherein at least one layer is disposed over the absorber layer. The at least one layer is a semiconductor having a higher carrier density than the carrier density of the absorber layer. The at least one layer comprises silicon. The at least one layer comprises a p+-type semiconductor. The absorber layer is substantially free of silicon. A method of forming the photovoltaic device is provided.

Abstract: A method for manufacturing a thin-film solar cell including the follow processes is provided. First, a substrate is provided. Then, a first conductive layer is formed on the substrate. Afterward, a first photovoltaic layer is formed on the first conductive layer. Then, the first photovoltaic layer is processed by a stabilized process, so as to reduce the light induced degradation as the first photovoltaic layer is illuminated. The material of the first photovoltaic layer is an amorphous semiconductor material. Later, a second photovoltaic layer is formed on the first photovoltaic layer. Then, a second conductive layer is formed on the second photovoltaic layer. A thin-film solar cell is also provided.

Abstract: A solar cell structure including a photovoltaic layer, an upper electrode, a lower electrode, and a passivation layer is provided. The photovoltaic layer has an upper surface, a lower surface and a plurality of side surfaces, wherein the photovoltaic layer includes a first type and a second type semiconductor layer. The upper electrode is disposed at the upper surface of the photovoltaic layer and electrically connected with the second type semiconductor layer, wherein the second type semiconductor layer is between the upper electrode and the first type semiconductor layer. The bottom electrode is disposed at the bottom surface of the photovoltaic layer and electrically connected with the first type semiconductor layer, wherein the first type semiconductor layer is between the bottom electrode and the second type semiconductor. The passivation layer covers at least one of the side surfaces so as to reduce the leakage current formed on the side surfaces.

Abstract: The invention relates to a method for producing solar cells comprising at least one p-i-n layer sequence containing micro-crystalline layers with the aid of a PECVD method. Said method is characterised in that all layers of the p-i-n layer sequence are deposited in a single-chamber process. The electrodes are interspaced at a distance of between 5 and 15 mm and the gas is distributed by means of a shower-head gas inlet, which guarantees a homogeneous distribution of the gas over the substrate. SiH4 gas streams with values of between 0.01 and 3 sccm/cm2 are added with a process pressure of between 8 and 50 hPa. The heater temperature is set at between 50 and 280° C. and the HF output is between 0.2 and 2 watt/cm2. The H2 gas streams have values of between 0.3 and 30 sccm/cm2, in particular between 0.3 and 10 sccm/cm2.

Abstract: A means for effectively preventing the temperature rise of the diode when the bypass diode is operating in a terminal box for a crystalline silicon solar cell panel is provided. The present invention is characterized in that, in the terminal box for a crystalline silicon solar cell panel, Schottky barrier diode is used as a bypass diode. Preferably, the forward-direction voltage drop of the Schottky barrier diode is the specific value or below at the specific junction temperature. Preferably, as a Schottky barrier diode, a package diode which is surface-mounting type or non-insulation type is used.

Abstract: A back metal electrode, a bottom cell using microcrystalline silicon for a photoelectric conversion layer, a front cell using amorphous silicon for a photoelectric conversion layer, and a transparent front electrode are formed in this order on a supporting substrate. At least one of the concentration of impurities contained in the front photoelectric conversion layer and the concentration of impurities contained in the bottom photoelectric conversion layer is controlled such that the concentration of impurities in the bottom photoelectric conversion layer is higher than the concentration of impurities in the front photoelectric conversion layer. Impurities do not include a p-type dopant or an n-type dopant but are any one, two, or all of carbon, nitrogen, and oxygen.

Abstract: A photovoltaic element capable of improving weather resistance is obtained. This photovoltaic element includes a photoelectric conversion layer, a first transparent conductive film formed on a surface of the photoelectric conversion layer closer to an incidence side and including a first indium oxide layer having (222) orientation and two X-ray diffraction peaks, and a second transparent conductive film formed on a surface of the photoelectric conversion layer opposite to the incidence side and including a second indium oxide layer having (222) orientation and one X-ray diffraction peak.

Abstract: A solar cell includes a first electrode, a second electrode and a stacked semiconductor layer. The stacked semiconductor layer is disposed between the first electrode and the second electrode. The stacked semiconductor layer includes a first semiconductor layer, a second semiconductor layer and an intrinsic semiconductor layer. The first semiconductor layer has a first energy gap. The second semiconductor layer has a second energy gap. The intrinsic semiconductor layer is disposed between the first semiconductor layer and the second semiconductor layer, wherein the intrinsic semiconductor layer is a chalcopyrite layer and has a third energy gap. The third energy gap is less than the first energy gap and the second energy gap.

Abstract: A novel surface texturing provides improved light-trapping characteristics for photovoltaic cells. The surface is asymmetric and includes shallow slopes at between about 5 and about 30 degrees from horizontal as well as steeper slopes at about 70 degrees or more from horizontal. It is advantageously used as either the front or back surface of a thin semiconductor lamina, for example between about 1 and about 20 microns thick, which comprises at least the base or emitter of a photovoltaic cell. In embodiments of the present invention, the shallow slopes are formed using imprint photolithography.

Abstract: In order to form a metal thin film, a silicide film, or the like between an upper-layer unit cell and a lower-layer unit cell in stacked-layer photoelectric conversion devices, a step of forming the thin film is additionally needed. Therefore, a problem such as decline in productivity of the photoelectric conversion devices occurs. A first unit cell including a single crystal semiconductor layer with a thickness of 10 ?m or less as a photoelectric conversion layer and a second unit cell including a non-single-crystal semiconductor layer as a photoelectric conversion layer, which is provided over the first unit cell, are at least included, and conductive clusters are dispersed between the unit cells. The conductive clusters are located between the lower-layer unit cell and the upper-layer unit cell to form an ohmic contact; thus, current flows between the both unit cells.

Abstract: A photoelectric conversion device comprising: a pin-type photoelectric conversion layer constituted of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer, wherein the p-type semiconductor layer contains silicon atoms and nitrogen atoms, which is possible to improve photoelectric conversion efficiency.

Abstract: A thin film solar cell includes; a first electrode, a first active layer disposed on the first electrode, a porous intermediate layer disposed on the first active layer, a second active layer disposed on the intermediate layer and a second electrode disposed on the second active layer.

Abstract: A method and apparatus for forming a thin film of a copper indium gallium selenide (CIGS)-type material are disclosed. The method includes providing first and second targets in a common sputtering chamber. The first target includes a source of CIGS material, such as an approximately stoichiometric polycrystalline CIGS material, and the second target includes a chalcogen, such as selenium, sulfur, tellurium, or a combination of these elements. The second target provides an excess of chalcogen in the chamber. This can compensate, at least in part, for the loss of chalcogen from the CIGS-source in the first target, resulting in a thin film with a controlled stoichiometry which provides effective light absorption when used in a solar cell.

Abstract: Embodiments of the present invention provide a method of forming an electrical connection on a device. In one embodiment, the electrical connection is attached to the device via an adhesive having electrically conductive particles disposed therein. In one embodiment, the adhesive is cured while applying pressure such that the conductive particles align, have a reduced particle-to-particle spacing, or come into contact with each other to provide a more directly conductive (less resistive) path between the electrical connection and the device. In one embodiment of the present invention, a method for forming an electrical lead on a partially formed solar cell during formation of the solar cell device is provided.