Abstract: A wafer fabrication process uses peripheral etching to form grooves in a wafer substrate around the periphery of windows opened for dopant diffusion and alignment mark formation, and forms Si.sub.3 N.sub.4 tapers in the grooves. Although ultimately removed, the grooves create a pattern with nearly vertical sidewalls in the substrate which, when transferred to an epitaxial layer, forms wafer alignment marks with sharp edges. The process can be used to form wafer alignment marks having arbitrary patterns and can be adopted to improve the reliability of automatic alignment without the need to make new masks.

Abstract: A method of improving the resistance to H-induced stress-corrosion cracking of articles of low- to medium-alloy structural steels which come into contact with aqueous H.sub.2 S-containing fluids and which are manufactured by one of (i) hot rolling, with or without subsequent heat treatment, (ii) by TM-rolling, with or without accelerated cooling, and (iii) by cold rolling with subsequent heat treatment and which are then cold strained from 0% to less than 2%. In order to economically increase the resistance of articles of structural steel to H-induced stress-corrosion cracking, the articles are subjected to a final annealing for a period of at least two seconds at a temperature which is at least 540.degree. C. and the upper limit of which is as follows: In the case of hot rolled or TM-rolled or normalized articles, 30K below A.sub.C1 ; in the case of hardened and tempered articles, 30K below the tempering temperature last employed.

Abstract: A low alloy hot work implement which retains its fine grain size at elevated working temperatures up to the range of 2,200 degrees F. to 2,250 degrees F. characterized in having a substantial content of N in the range of 75-150 ppm and, preferably, Co in the range of 0.01 to 0.1 the implement being further characterized by relatively narrow ranges of C, Mn, Si, Ni, Cr, Mo, and V, and substantial contents of Al which furnishes the basis for a substantial presence of aluminum nitrides in the final product.

Abstract: A method for processing at least two semiconductor wafers for producing a partially processed semiconductor substrate which can be subsequently further processed utilizing conventional planar semiconductor processing techniques to achieve a complementary semiconductor structure in which a plurality of matched semiconductor elements can be formed. An embedded silicide layer in the bonded semiconductor substrate acts as a conduit for horizontally dispersing dopant during the diffusion process. The dopant subsequently up-diffuses into an adjacent silicon region forming generally uniform and shallow, buried layer regions.

Abstract: High strength heat-resistant low alloy steels have a chemical composition of, on weight basis, a carbon content of 0.03-0.12%, a silicon content not higher than 1%, a manganese content of 0.2-1%, a phosphor content not higher than 0.03%, a sulfur content not higher than 0.03%, a nickel content not higher than 0.8%, a chromium content of 0.7-3%, a molybdenum content of 0.3-0.7%, a tungsten content of 0.6-2.4%, a vanadium content of 0.05-0.35%, a niobium content of 0.01-0.12% and a nitrogen content being 0.01-0.05% with the balance of iron and inevitable impurities, wherein the molybdenum content and the tungsten content satisfy the relationship 0.8%.ltoreq.(Mo+1/2W)%.ltoreq.1.5%; or a carbon content of 0.03-0.12%, a silicon content not higher than 1%, a manganese content of 0.2-1%, a phosphor content not higher than 0.03%, a sulfur content not higher than 0.03%, a nickel content not higher than 0.8%, a chromium content of 0.7-3%, a molybdenum content of 0.3-1.5%, a vanadium content of 0.05-0.

Abstract: Shadow masking layer (130) is undercut during etch of sidewall layer (120) thus preventing sidewall growth during growth of heteroepitaxial region (140), resulting in a planar structure with a high integrity of crystal in the grown region (140).

Abstract: A compound semiconductor material includes Ga.sub.x Al.sub.1-x N (wherein 0.ltoreq.x.ltoreq.1) containing B and P and having a zinc blend type crystal structure. A compound semiconductor element includes Ga.sub.x Al.sub.1-x N (wherein 0.ltoreq.x.ltoreq.1) layer having a zinc blend type crystal structure. A method of manufacturing a compound semiconductor element includes the step of sequentially forming a BP layer and a Ga.sub.x Al.sub.1-x N (wherein 0.ltoreq.x.ltoreq.1) layer on a substrate so as to form a heterojunction by using a metal organic chemical vapor deposition apparatus having a plurality of reaction regions, and moving the substrate between the plurality of reaction regions.

Abstract: A rolling-part steel and a rolling part employing same are disclosed. The steel includes: C; 0.1 to 0.7 wt. %, Si; below or equal to 0.04 wt. %; Mn; below or equal to 1.0 wt. %, Cr; 0.2 to 1.0 wt. %, S; below or equal to 0.003 wt. %; P; below or equal to 0.025 wt. %, O; below or equal to 0.0015 wt. %, the reminder Fe, and a necessary impurity. The steel has a good plastic-workability such that the rolling part can be produced only by plastic working. The steel also has a good hardenability.

Abstract: A method of producing a quasi-flat semiconductor device capable of a multi-wavelength laser effect and the device thus produced.On the basis of a double heterostructure stack supported by a substrate comprising steps, following levelling of the stack and diffusion through a flat surface, a semiconductor device is obtained which is capable of a multi-wavelength laser effect, of which the different junctions are situated in a plane parallel with the base of the substrate.

Abstract: A process for the manufacture of a seamless pressure vessel and the seamless pressure vessel produced thereby, the process including the steps of employing an aluminum-killed CrMo steel which includes by wt. %: 0.28-0.39% C; 0.15-0.40% Si; 0.45-0.90% Mn; max. 0.02% P; max. 0.005% S; 0.90-1.30% Cr; 0.15-0.35% Mo; 0.0010-0.040% Ti; 0.001-0.003% B; and 0.003-0.010% N; hot working the alumninum-killed CrMo Steel to produce the seamless pressure vessel, austenizing the seamless pressure vessel at a temperature between about 830.degree. C. and about 880.degree. C.; cooling the seamless pressure vessel at a cooling rate of between about 5.degree. K/s and about 15.degree. K/s; and tempering the seamless pressure vessel at a temperature between about 510.degree. C. and about 660.degree. C.

Abstract: A quaternary semiconductor diffraction grating, such as an InGaAsP grating suitable for a DFB laser, is embedded in a semiconductor substrate, such as InP. In one embodiment, the grating is fabricated by(1) forming on the top surface of an InP substrate body an epitaxial layer of InGaAsP coated with an epitaxial layer of InP;(2) forming a pattern of apertures penetrating through the layers of InP and InGaAsP; and(3) heating the body to a temperature sufficient to cause a mass transport of InP from the InP epitaxial layer, the thickness of the InP layer being sufficient to bury the entire surface of the InGaAsP layer with InP.

Abstract: A microcrystalline silicon-containing silicon carbide semiconductor film has an optical energy gap of not less than 2.0 eV, and a dark electric conductivity of less than 10.sup.-6 Scm.sup.-1. The Raman scattering light of the microcrystalline silicon-containing silicon carbide semiconductor film, which shows the presence of silicon crystal phase, has a peak in the vicinity of 530 cm.sup.-1. This microcrystalline silicon-containing silicon carbide semiconductor film is formed on a substrate by preparing a mixture gas having a hydrogen dilution rate .gamma., which is the ratio of the partial pressure of hydrogen gas to the sum of the partial pressure of a silicon-containing gas and the partial pressure of a carbon-containing gas, of 30, transmitting microwave of a frequency of not less than 100 MHz into the mixture gas near a substrate with an electric power density of not less than 4.4.times.10.sup.-2, and generating plasma at a temperature of the substrate of not less than 200.degree. C.

Abstract: The present invention provides a steel for a corrosion-resistant rolling part having excellent corrosion resistance, high quenching and tempering hardness, and excellent workability for use in linear bearings, ball screws and rolling bearings of industrial machinery which must be strictly prevented from undergoing environmental contamination due to oil and grease. The steel comprises 0.5% or more and 0.7% or less by weight of carbon, 0.1% or more and 1.5% or less by weight of silicon, 0.1% or more and 2.0% or less by weight of manganese, 3.0% or more and less than 6.0%, preferably 4.0% or more and 5.5% or less, by weight of chromium, 0.05% or less by weight of phosphorus, 0.03% or less, preferably 0.01% or less, by weight of sulfur and 0.0015% or less by weight of oxygen, and may further comprise at least one of 0.05% or more and 2.0% or less, preferably 0.05% or more and 1.0% or less, by weight of molybdenum and 0.1% or more and 0.8% or less, preferably 0.2% or more and 0.

Abstract: A laminated structure of compound semiconductors comprising a IV semiconductor underlying substrate, a first III-V compound semiconductor layer that is formed as an intermediate layer on the IV compound semiconductor underlying substrate, and a second III-V compound semiconductor layer that is formed on the intermediate layer, wherein the thermal expansion coefficients of the IV compound semiconductor underlying substrate, E.sub.ts, the first III-V compound semiconductor layer, E.sub.t1, and the second III-V compound semicondductor layer, E.sub.t2, have the following relationship: E.sub.t1 >E.sub.t2 >E.sub.ts.

Abstract: A method for producing a metallic interface suitable for overlaying consists of exposing the area of an alloy combination to be overlayed to a temperature above its lower critical until an element reduced zone arises. This element reduced zone more easily accepts element diffusion that takes place during overlaying. Accordingly, an improved interface, one that is more ductile and less prone to cracking, is produced.

Abstract: A ferritic alloy steel with high ductility and high toughness, and a controlled microstructure for making pipe molds for centrifugally casting pipe consisting essentially of from about 0.12% to about 0.22% carbon, about 0.40% to about 0.80% manganese, about 0.025% maximum phosphorus, about 0.025% maximum sulphur, about 0.15% to about 0.40% silicon, about 0.00% to about 0.55% nickel, about 0.80% to about 1.20% chromium, about 0.15% to about 0.60% molybdenum, about 0.03% to about 0.08% vanadium, and balance essentially iron.

Abstract: Unpinned epitaxial metal-oxide-compound semiconductor structures are disclosed and a method of fabricating such structures is described. Epitaxial layers of compound semiconductor are grown by MBE which result in the formation of a smooth surface having a stabilized reconstruction. An elemental semiconductor layer is deposited epitaxially in-situ with the compound semiconductor layer which unpins the surface Fermi level. A layer of insulator material is then deposited on the elemental semiconductor layer by PECVD. In one embodiment, the compound semiconductor is GaAs and the elemental semiconductor is Si. The insulator material is a layer of high quality SiO.sub.2. A metal gate is deposited on the SiO.sub.2 layer to form an MOS device. The epitaxial GaAs layer has a density of states which permits the interface Fermi level to be moved through the entire forbidden energy gap. In another embodiment, the SiO.sub.

Abstract: Epitaxial Si-Ge heterostructures are formed by depositing a layer of amorphous Si-Ge on a silicon wafer. The amorphous Si-Ge on the silicon wafer is then subjected to a wet oxidation in order to form an epitaxial Si-Ge heterostructure. Any size wafer may be used and no special precaustions need be taken to ensure a clean amorphous Si-Ge/Si interface.

Abstract: A material for a light emitting element most suited for a light emitting diode or laser diode which emits visible light of 550 to 650 nm band wavelength. The material provides an at least two-layered structure composed of a GaAs substrate and a Sn doped InGaP layer developed on the substrate without forming a gradient layer therebetween. The mixed crystal composition of the Sn doped InGaP layer as expressed by the molar fraction of GaP is 0.50 to 0.75.According to the method for developing mixed crystals of InGaP, GaP and InP are dissolved in Sn to make a solution. The solution is allowed to come in contact with a GaAs substrate so that InGaP crystals are developed directly on the GaAs substrate without a gradient layer for coordinating the lattice constant formed on the GaAs substrate.

Abstract: A semiconductor window which is transparent to light in the infrared range and which has good electrical conductivity is formed of a substrate material having a semiconductor coating having a dopant included therein. The coating is diffused, grown or deposited on one surface of the substrate and is controlled to obtain both low electrical resistivity and high infrared transmissivity. The coating can be formed of the same material as the substrate or can be a different material. Windows having particular thermal properties are formed utilizing zinc selenide and zinc sulfide as the substrate.

Abstract: A method is provided to improve the alignment process in fabricating an integrated circuit with buried layers. The buried layers are implanted in a substrate and driven in, but without the usual step at their perimeter. A target pattern is etched into the substrate surface by means of plasma-assisted etching. An isotropic epitaxial layer is then grown at reduced pressure over the substrate surface so that the target is replicated on the epitaxial layer surface. The target as replicated is thus suitable for optical alignment, either manually or by automatic alignment equipment.

Abstract: A semiconductor structure is provided comprising a bulk substrate of semiconductor material having a first-type doping conductivity in a first dopant concentration. A first layer of semiconductor material is epitaxially formed on the substrate, such first layer having the first-type doping conductivity in a second dopant concentration lower than the first concentration. A second layer of semiconductor material is epitaxially formed on the first layer, the second layer having a second-type doping conductivity opposite to the first-type doping conductvity and thereby forming a P-N junction with the first layer. A plurality of regions, comprising semiconductor material having the first-type doping conductivity and extending through the second layer and a predetermined distance into the first layer, are further included for providing electrical isolation between active devices formed in different regions of the second layer.

Abstract: A ferritic alloy steel with high ductility and high toughness, and a controlled microstructure for making pipe molds for centrifugally casting pipe consisting essentially of from about 0.12% to about 0.22% carbon, about 0.4% to about 0.80% manganese, about 0.025% maximum phosphorus, about 0.025% maximum sulphur, about 0.15% to about 0.40% silicon, about 0.00% to about 0.55% nickel, about 0.80% to about 1.26% chromium, about 0.15% to about 0.60% molybdenum, about 0.03% to about 0.08% vanadium, and balance essentially iron.

Abstract: The present invention is directed to a steam turbine rotor which comprises an iron base alloy containing 0.05 to 0.2 wt % of carbon, 0.1 wt % or less of silicon, 0.05 to 1.5 wt % of manganese, more than 8.0 wt % to less than 13 wt % of chromium, less than 1.5 wt % of nickel, 0.1 to 0.3 wt % of vanadium, 0.01 to 0.1 wt % of niobium, 0.01 to 0.1 wt % of nitrogen, 0.02 wt % or less of aluminum, less than 0.50 wt % of molybdenum and 0.9 to 3.0 wt % of tungsten; contents of molybdenum Mo and tungsten W satisfying the following formulae0.75.ltoreq.1/2W+Mo and3.ltoreq.W/Mo;a .delta.-ferrite phase and a large grain boundry carbide being scarcely contained basically in the metallic structure; a matrix of martensite being formed therein.

Abstract: A monolithic laser diode and photo diode is provided in a process in which a mesa is formed on a substrate, the mesa including two regions having different upper surface widths. A photoactive layer serving eventually as the active layer of the laser diode and the light detecting layer of the photo diode is formed on the mesa by means of a liquid phase epitaxy process in which the rate of growth of the layer is faster on the mesa region of greater surface width. This results in different layer thicknesses on the two mesa regions. The region with the thinner layer is thereafter incorporated into the laser diode, and the region with the thicker layer is incorporated into the photo diode. The thicker photo diode layer enhances the light capturing capacity of the photo diode.

Abstract: A high strength spring is made of steel of which composition consists of 0.6 to 0.7 wt % of C, 1.2 to 1.6 wt % of Si, 0.5 to 0.8 wt % of Mn, 0.5 to 0.8 wt % of Cr, 0.05 to 0.2 wt % in total of one or more than one of V, Mo, Nb and Ta and the balance of Fe and inevitable impurities. The steel is limited in particle size of non-metallic inclusions in such a way that the maximum particle size of the non-metallic inclusions is equal to or smaller than 15 .mu.m. The spring is applied at a portion adjacent the outer surface thereof with a residual compression stress in such a way that the maximum of the residual compression stress ranges from 85 to 110 Kgf/mm.sup.2. The spring is further process so as to have such a surface roughness that is equal to or smaller than 15 .mu.m.

Abstract: Semiconductor films and photovoltaic devices prepared therefrom are provided wherein the semiconductor films have a specular surface with a texture less than about 0.25 micron greater than the average planar film surface and wherein the semiconductor films are surface modified by exposing the surface to an aqueous solution of bromine containing an acid or salt and continuing such exposure for a time sufficient to etch the surface.

Abstract: Disclosed is a process for the production of a semiconductor element by introducing a gas of an organic metal compound of an element of the group III and a gas containing an element of the group V into a reaction chamber in which a substrate of a single crystal of alumina is arranged and epitaxially growing a III.V compound semiconductor by the thermal decomposition vapor deposition of the compound of the elements of the groups III.V, said process comprises, in combination, the steps of (A) heating the substrate at a temperature of 400.degree. to 550.degree. C., introducing the gas of the organic metal compound of the element of the group III and the gas containing the element of the group V into the reaction chamber and forming a film of a compound of the elements of the groups III.V on the surface of the substrate by the vapor deposition, (B) heating the substrate obtained at the step (A) at a temperature higher than 550.degree. C. but lower than 750.degree. C.

Abstract: A brake disc material which does not crack under a great braking action, such as in a large-sized truck, consisting of 0.03 percent to 1 percent of carbon, 1.2 percent to 20 percent of chromium, and 0.1 percent to 1 percent of molybdenum, the balance being essentially iron.

Abstract: An epitaxial layer having a double-hetero structure is forming using an MOCVD process or an MBE process, and an epitaxial substrate is formed using an LPE process, thereby forming a substrate which exploits the distinguishing features of both processes. Since the MOCVD process or MBE process exhibits mixed-crystal ratio and film thickness controllability, excellent reproducibility and uniformity are obtained when forming the double-hetero structure on a compound semiconductor substrate. Since the growth process takes place under thermal non-equilibrium, the amount of impurity doping is raised to more than 10.sup.19 cm.sup.3. This is advantageous in terms of forming an electrode contact layer. With the LPE process, the material dissolved in the melt is grown epitaxially on the substrate by slow cooling, and the rate of growth is high. This process is suitable for forming the substrate after removal of the compound semiconductor substrate.

Abstract: In a process for preparing an infrared sentitive photodiode comprising the teps of:(1) forming by vacuum deposition an epitaxial layer of a semiconductor alloy material selected from the group consisting of PbSe, PbTe, PbSe.sub.x Te.sub.1-x, Pb.sub.y Sn.sub.1-y Se, Pb.sub.y Sn.sub.1-y Te, Pb.sub.y Sn.sub.1-y Se.sub.x Te.sub.1-x, Pb.sub.z Cd.sub.1-z Se, Pb.sub.z Cd.sub.1-z Te, and Pb.sub.z Cd.sub.1-z Se.sub.x Te.sub.1-x, wherein 0<x<1, 0<y<1, and 0<z<1, to cover at least a portion of the surface of a substrate composed of an infrared transparent single crystal material selected from the group consisting of(a) alkali metal halides and(b) alkaline earth halides;(2) coating the epitaxial layer of semiconductor alloy material with a thin layer of a lead halide selected from the group consisting of PbCl.sub.2, PbBr.sub.2, PbF.sub.

Abstract: A method for producing wafers having deposited layers of III-V materials on Si or Ge/Si substrates is disclosed. The method involves the use of multiple in situ and ex situ annealing steps and the formation of a thermal strain layer to produce wafers having a decreased incidence of defects and a balanced thermal strain. The wafers produced thereby are also disclosed.

Abstract: A method of forming a high-quality complementary transistor device using bonded wafer technology. The invention includes bonding a handle wafer to a first epitaxial layer and then providing dopants to form the respective N and P buried layers in said first epitaxial layer. A second epitaxial layer is then deposited over the buried layers to provide the device forming regions for the respective transistor devices.

Abstract: A method of forming a nonsilicon semiconductor layer on an insulating layer by forming a thin heteroepitaxial layer of nonsilicon semiconductor on a first substrate having a lattice structure which matches that of the heteroepitaxial layer. A first insulating layer is formed on the heteroepitaxial layer. A second insulating layer is formed on the surface of a second substrate. The first and second insulating layers are bonded together to form a unified structure, and the first substate is etched away. In a preferred embodiment the heteroepitaxial layer is germanium, gallium arsenide or silicon-germanium alloy while the first substrate is silicon, germanium, gallium arsenide or silicon-germanium alloy.

Abstract: An improved hot work tool steel has higher hardness capability and better temper resistance above 1100 F. and better wear resistance than AISI type H13 and better toughness and ductility then AISI type H10 or type H21. The steel alloy contains essentially the following in weight percent:______________________________________ Carbon 0.55 Max. Manganese 1.5 Max. Silicon 2.0 Max. Chromium 3.5-6.0 Molybdenum 1.5-3.0 Vanadium 0.50-1.50 ______________________________________and the balance is essentially iron except for the usual impurities found in commerical grades of hot work tool steels. Carbon and chromium are balanced within the composition such that% carbon.gtoreq.0.098.times.% chromium.

Abstract: Multidimensional quantum-well arrays are made by electron-beam lithographic atterning, followed by solid-state diffusion.

Abstract: Certain semiconductor device structures are described in which single crystal layers of cubic Group II fluorides cover at least part of the surface of III-V semiconductor compound. The fluoride crystal has a cubic structure and may be lattice matched or lattice mismatched to the compound semiconductor substrate depending on fluoride composition. These fluoride single crystal layers are put down by a moleuclar beam epitaxy procedure using certain critical substrate temperature ranges and a particular cleaning procedure.

Abstract: A method of passivating a Group III-V compound surface by exposing the surface to a compound A-B, wherein A is an element having a heat of oxide formation greater than the heats of oxide formation of Group III and V elements and B is an element: S, Se, Te or Po.

Abstract: Certain semiconductor device structures are described in which single crystal layers of cubic Group II fluorides cover at least part of the surface of III-V semiconductor compound. The Fluoride crystal has a cubic structure and may be lattice matched or lattice mismatched to the compound semiconductor substrate depending on fluoride composition. These fluoride single crystal layers are put down by a molecular beam epitaxy procedure using certain critical substrate temperature ranges and a particular cleaning procedure.

Abstract: An epitaxial wafer for producing arrays of GaAsP-LEDs comprises, in the GaAs.sub.1-x P.sub.x layer with varying X, a layer region(s) with a discontinuous variance of x along the thickness of the GaAs.sub.1-x P.sub.x layer. This layer region(s) contribute to a uniformity in the brightness of the light emission of LEDs formed in the epitaxial wafer.

Abstract: A thin film single crystal diamond substrate which comprises a base substrate selected from the group consisting of a single crystal silicon substrate and a single crystal GaAs substrate, an intermediate layer consisting of single crystal silicon carbide formed on the base substrate and a thin film of single crystal diamond which is epitaxially grown on the intermediate layer, which can have a large area and be easily and economically produced.

Abstract: A molecular beam epitaxy method of growing Ge.sub.x Si.sub.1-x films on silicon substrate is described. Semiconductor heterostructures using Ge.sub.x Si.sub.1-x layers grown on either Ge or Si substrates are described.

Abstract: A heat resistant steel of the present invention contains 0.05 to 0.2 wt. % of C, less than 0.5 wt. % of Si, less than 0.6 wt. % of Mn, 8 to 13 wt. % of Cr, 1.5 to 3 wt. % of Mo, 2 to 3 wt. % of Ni, 0.05 to 0.3 wt. % of V, 0.02 to 0.2 wt. % in total of either or both of Nb and Ta, 0.02 to 0.1 wt. % of N and the balance substantially Fe. Since a gas turbine of the present invention is constituted by members, such as discs, blades, shafts and so forth, made of alloys of this kind, the gas turbine has a structure in which it is possible to achieve a high level of creep rupture strength and Charpy impact value.

Abstract: A high-strength, heat-resisting ferritic steel pipe or tube for boiler use containing 0.03 to 0.15% C, 0.1 to 1.5% Mn, 8 to 13% Cr, 1.8 to 3.0% W, 0.05 to 0.30% V, 0.02 to 0.12% Nb, 0.02 to 0.05% N, 0.02 to 0.4% Mo, and up to 0.25% Si. This pipe or tube has an improved high-temperature creep rupture strength and an excellent weldability and toughness.

Abstract: A carbon or alloy steel heat treated grinding rod having improved wear resistance and breaking resistance for use in a rotating grinding mill. The surface of the rod has a martensitic microstructure having a hardness of at least HRC 55. The core of the rod has a bainitic microstructure having a hardness of at least HRC 40. A preferred rod composition includes at least 0.7% carbon, at least 0.25% of molybdenum, at least 0.25% chromium, less than 0.7% manganese, the balance iron and unavoidable impurities, all percentages by weight.

Abstract: The invention relates to a method of manufacturing a high-strength steel sheet by annealing the steel sheet after cold rolling. In order to obtain the low-yield ratio, high-strength steel sheet having high strength and good ductility, resistance to secondary cold-work embrittlement and spot weldability at low cost, the steel sheet containing 0.03-0.15% of P and specified amounts of C, Mn and Al as basic components and optionally containing, as a selective component, at least one element selected from a group of Si, Cr, Mo and B and a group of Nb, Ti, and V in such amounts as to meet the relation formula restricting the total content of Mn, Si, P, Cr and Mo is subjected to annealing under the conditions that the sheet is heated at a temperature of from Ac.sub.1 transformation point to 950.degree. C. for from 10 seconds to 10 minutes and cooled in such a control manner that an average cooling rate between 600.degree. C. and 300.degree. C.

Abstract: In order to secure electronic components, and particularly large-area power semiconductors, to a substrate, first a paste formed of metal powder and a solvent is applied in the form of a layer to a contacting layer of the component and/or a contact surface of the substrate. The layer of paste is then dried. When the paste has dried, the component is placed onto the substrate, whereupon the entire arrangement is heated to a relatively low sintering temperature preferably between 180.degree. C. and 250.degree. C., and with simultaneous application of a mechanical pressure of at least 900 N/cm.sup.2. A connection which is thus achieved by such a pressure sintering at relatively low sintering temperatures is particularly suitable for securing power semiconductors produced in MOS-technology to a substrate.

Abstract: A highly tough, ERW steel pipe having a distinguished sour resistance is disclosed. The steel pipe is prepared from steel for production of ERW steel pipe containing 0.01 to 0.35% by weight of C; 0.02 to 0.5% by weight of Si; 0.1 to 1.8% by weight of Mn; more than 0.005% to 0.05% by weight of Al; 0.0005 to 0.008% by weight of Ca; 0.001 to 0.015% by weight of Zr; not more than 0.015% by weight of P; and not more than 0.003% by weight of S; a ratio of Zr/Al or (Ti+Zr)/Al being less than 2 by weight; or further containing (A) at least one of 0.2 to 0.6% by weight of Cu, 0.1 to 1.0% by weight of Ni and 0.2 to 3.0% by weight of Cr, and/or (B) at least one of 0.10 to 1.0% by weight of Mo, 0.01 to 0.15% by weight of Nb, 0.005 to 0.10% by weight of Ti and 0.01 to 0.15% by weight of V; the balance being Fe and impurities as a steel material; and the steel pipe has a welding part in which the content of Al.sub.2 O.sub.3 contained in inclusions at welding heat affected zone is not more than 50% by weight.

Abstract: A novel low C-Cr-Mo steel having an excellent weldability and a high erosion-corrosion resistance under wet steam, which consists of, in % by weight, 0.02-0.14% of C, not more than 0.90% of Si, 0.30-0.80% of Mn, 0.70-1.60% of Cr, 0.40-0.70% of Mo and the remainder being susbtantially Fe. This novel steel is a very excellent material for fabricating the portions in the feed-water heater, for example, for a nuclear power generation plant, the portions being used under wet steam condition. The above described weldability and erosion-corrosion resistance can be improved, by additionally adding the second components of Cu, N, or B, the third components of Nb or V or the fourth components of Al, Ti or Zr in the respectively defined amounts.

Abstract: The surface of a substrate is passivated by the introduction of a thin la of (Hg,Cd)Te, of increased Cd content, on the substrate surface before the growth of the desired composition of (Hg,Cd)Te.