For Detection Or Control Of Pressure Or Flow Of Etchant Gas Patents (Class 156/345.26)
  • Patent number: 10509321
    Abstract: A temperature controlling apparatus includes a platen, a fluid source, a chiller, a first conduit and a second conduit. The fluid source supplies a fluid. The chiller is coupled to the fluid source to cool the fluid in the fluid source to a cooling temperature. The first conduit includes a first inlet in communication with the fluid source, a first outlet and a first heater that heats the fluid from the cooling temperature to a first heating temperature. The fluid heated by the first heater is dispensed on the platen through the first outlet. The second conduit includes a second inlet in communication with the fluid source, a second outlet and a second heater that heats the fluid from the cooling temperature to a second heating temperature different from the first heating temperature. The fluid heated by the second heater is dispensed on the platen through the second outlet.
    Type: Grant
    Filed: January 30, 2018
    Date of Patent: December 17, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chi-Hung Liao, Wei-Chang Cheng
  • Patent number: 10386829
    Abstract: A system for controlling an etch process includes an etching tool, a metrology tool, and a controller. The etching tool is controllable via a set of control parameters and may execute a plurality of etch recipes containing values of the set of control parameters. The controller may direct the etching tool to execute a plurality of etch recipes on a plurality of metrology targets; direct the metrology tool to generate metrology data indicative of two or more etch characteristics on the plurality of metrology targets; determine one or more relationships between the two or more etch characteristics and the set of control parameters based on the metrology data; and generate, based on the one or more relationships, a particular etch recipe to constrain one of the two or more etch characteristics and maintain the remainder of the two or more etch characteristics within defined bounds.
    Type: Grant
    Filed: September 15, 2016
    Date of Patent: August 20, 2019
    Assignee: KLA-Tencor Corporation
    Inventor: Franz Zach
  • Patent number: 10256108
    Abstract: A method for performing atomic layer etching (ALE) on a substrate, including the following method operations: performing a surface modification operation on a surface of the substrate, the surface modification operation configured to convert at least one monolayer of the substrate surface to a modified layer; performing a removal operation on the substrate surface, the removal operation configured to remove the modified layer from the substrate surface, wherein removing the modified layer occurs via a ligand exchange reaction that is configured to volatilize the modified layer; performing, following the removal operation, a plasma treatment on the substrate surface, the plasma treatment configured to remove residues generated by the removal operation from the substrate surface, wherein the residues are volatilized by the plasma treatment; repeating the foregoing operations until a predefined thickness has been etched from the substrate surface.
    Type: Grant
    Filed: February 17, 2017
    Date of Patent: April 9, 2019
    Assignee: Lam Research Corporation
    Inventors: Andreas Fischer, Thorsten Lill, Richard Janek, John Boniface
  • Patent number: 10207219
    Abstract: The present disclosure relates to systems and methods for dehumidifying air by establishing a humidity gradient across a water selective permeable membrane in a dehumidification unit. Water vapor from relatively humid atmospheric air entering the dehumidification unit is extracted by the dehumidification unit without substantial condensation into a low pressure water vapor chamber operating at a partial pressure of water vapor lower than the partial pressure of water vapor in the relatively humid atmospheric air. For example, water vapor is extracted through a water permeable membrane of the dehumidification unit into the low pressure water vapor chamber. As such, the air exiting the dehumidification unit is less humid than the air entering the dehumidification unit. The low pressure water vapor extracted from the air is subsequently condensed and removed from the system at ambient conditions.
    Type: Grant
    Filed: January 31, 2014
    Date of Patent: February 19, 2019
    Assignee: The Texas A&M University System
    Inventors: David E. Claridge, Charles H. Culp
  • Patent number: 10184179
    Abstract: The present disclosure relates to methods and apparatus for an atomic layer deposition (ALD) processing chamber for device fabrication and methods for replacing a gas distribution plate and mask of the same. The ALD processing chamber has a slit valve configured to allow removal and replacement of a gas distribution plate and mask. The ALD processing chamber may also have actuators operable to move the gas distribution plate to and from a process position and a substrate support assembly operable to move the mask to and from a process position.
    Type: Grant
    Filed: January 20, 2015
    Date of Patent: January 22, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Shinichi Kurita, Jozef Kudela, John M. White, Dieter Haas
  • Patent number: 10153172
    Abstract: A method of etching a silicon oxide film on a substrate, includes generating reaction products containing moisture by modifying the silicon oxide film by supplying a mixed gas containing a gas containing a halogen element and a basic gas onto the surface of the silicon oxide film and making chemical reaction of the silicon oxide film with the mixed gas, generating different reaction products by modifying the silicon oxide film by supplying the gas containing a halogen element onto an interface between the silicon oxide film and the reaction products and making a chemical reaction on the silicon oxide film with the gas containing a halogen element by using the moisture contained in the reaction products, and heating and removing the reaction products and the different reaction products.
    Type: Grant
    Filed: March 26, 2018
    Date of Patent: December 11, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Takuji Sako
  • Patent number: 9920425
    Abstract: A semiconductor manufacturing apparatus according to an embodiment includes a chamber that is capable of accommodating therein a plurality of semiconductor substrates. A gas supply part supplies process gas to the chamber. A top exhaust port is connected to a top portion of the chamber and exhausts gas within the chamber. A bottom exhaust port is connected to a bottom portion of the chamber and exhausts gas within the chamber. A controller controls a timing of supplying process gas from the gas supply part and a timing of switching between exhaust from the top exhaust port and exhaust from the bottom exhaust port.
    Type: Grant
    Filed: December 18, 2014
    Date of Patent: March 20, 2018
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Takayuki Matsui, Hajime Nagano
  • Patent number: 9716012
    Abstract: Provided are methods for selective deposition. Certain methods describe providing a first substrate surface; providing a second substrate surface; depositing a first layer of film over the first and second substrate surfaces, wherein the deposition has an incubation delay over the second substrate surface such that the first layer of film over the first substrate surface is thicker than the first layer of film deposited over the second substrate surface; and etching the first layer of film over the first and second substrate surfaces, wherein the first layer of film over the second substrate surface is at least substantially removed, but the first layer of film over the first substrate is only partially removed.
    Type: Grant
    Filed: December 4, 2014
    Date of Patent: July 25, 2017
    Assignee: Applied Materials, Inc.
    Inventors: David Thompson, Huixiong Dai, Patrick M. Martin, Timothy Michaelson, Kadthala R. Narendrnath, Robert Jan Visser, Jingjing Xu, Lin Zhang
  • Patent number: 9677940
    Abstract: An elemental analysis apparatus 101 includes a treatment vessel 108 of which at least a part is optically transparent, a first electrode 104 covered by insulator 103, a second electrode 102, a bubble-generating part which generates a bubble 106, a gas-supplying apparatus 105 which supplies gas to the bubble-generating part in an amount necessary for generating the bubble 106, a power supply 101 which applies voltage between the first electrode 104 and the second electrode 102, and an optical detection device 110 which determines an emission spectrum of plasma that is generated by application of the voltage, and the apparatus conducts qualitatively or quantitatively analysis of a component contained in the liquid 109 based on the emission spectrum determined by the optical detection device 110.
    Type: Grant
    Filed: February 19, 2014
    Date of Patent: June 13, 2017
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Hironori Kumagai, Shin-ichi Imai
  • Patent number: 9653264
    Abstract: Plasma processing apparatus and methods are disclosed. Embodiments of the present disclosure include a processing chamber having an interior space operable to receive a process gas, a substrate holder in the interior of the processing chamber operable to hold a substrate, and at least one dielectric window. A metal shield is disposed adjacent the dielectric window. The metal shield can have a peripheral portion and a central portion. The processing apparatus includes a primary inductive element disposed external to the processing chamber adjacent the peripheral portion of the metal shield. The processing apparatus can further include a secondary inductive element disposed between the central portion of the metal shield and the dielectric window. The primary and secondary inductive elements can perform different functions, can have different structural configurations, and can be operated at different frequencies.
    Type: Grant
    Filed: December 14, 2011
    Date of Patent: May 16, 2017
    Assignee: Mattson Technology, Inc.
    Inventors: Vladimir Nagorny, Dongsoo Lee, Andreas Kadavanich
  • Patent number: 9646848
    Abstract: A method for etching a silicon oxide film on a target substrate where an etching area is partitioned by pattern layers and stopping the etching before a base layer of the silicon oxide layer is etched is disclosed. The method includes heating the target substrate in a vacuum atmosphere and intermittently supplying, as an etching gas, at least one of a processing gas containing a hydrogen fluoride gas and an ammonia gas in a pre-mixed state and a processing gas containing a compound of nitrogen, hydrogen and fluorine to the target substrate from a gas supply unit multiple times.
    Type: Grant
    Filed: July 1, 2015
    Date of Patent: May 9, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Satoshi Toda, Kensaku Narushima, Hiroyuki Takahashi
  • Patent number: 9378954
    Abstract: Methods for forming a semiconductor devices are provided. A plasma pre-treatment operation is performed on a photoresist pattern formed over a material disposed over a substrate, and reduces critical dimensions (CDs) of features of the photoresist pattern to a greater extent at a central portion of the substrate than at outer portions of the substrate, thereby forming a treated pattern with a gradient of CDs. The material is then etched using the treated pattern as a photomask. An overetch operation that tends to reduce CDs of the etched features of the material to a greater extent at outer portions of the substrate than at the central portion of the substrate, is employed. The plasma pre-treatment operation is designed in conjunction with the overetch characteristics and, in combination, the operations produce etched features having CDs with a high degree of uniformity across the substrate.
    Type: Grant
    Filed: March 12, 2014
    Date of Patent: June 28, 2016
    Assignee: WAFERTECH, LLC
    Inventors: Cuker Huang, Yihguei Wey
  • Patent number: 9336996
    Abstract: A plasma processing system for generating plasma to process a wafer. The plasma processing system includes a set of top coils for initiating the plasma, a set of side coils for affecting distribution of the plasma, and a chamber structure for containing the plasma. The chamber structure includes a chamber wall and a dielectric member. The dielectric member includes a top, a vertical wall, and a flange. The top is connected through the vertical wall to the flange, and is connected through the vertical wall and the flange to the chamber wall. The set of top coils is disposed above the top. The set of side coils surrounds the vertical wall. A vertical inner surface of the vertical wall is configured to be exposed to the plasma. The inner diameter of the vertical wall is smaller than the inner diameter of the chamber wall.
    Type: Grant
    Filed: February 24, 2011
    Date of Patent: May 10, 2016
    Assignee: Lam Research Corporation
    Inventors: Maolin Long, Alex Paterson
  • Patent number: 9337072
    Abstract: The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.
    Type: Grant
    Filed: November 19, 2010
    Date of Patent: May 10, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Ganesh Balasubramanian, Amit Bansal, Eller Y. Juco, Mohamad Ayoub, Hyung-Joon Kim, Karthik Janakiraman, Sudha Rathi, Deenesh Padhi, Martin Jay Seamons, Visweswaren Sivaramakrishnan, Bok Hoen Kim, Amir Al-Bayati, Derek R. Witty, Hichem M'Saad, Anton Baryshnikov, Chiu Chan, Shuang Liu
  • Patent number: 9293353
    Abstract: A Faraday shield and a plasma processing chamber incorporating the Faraday shield is are provided. The plasma chamber includes an electrostatic chuck for receiving a substrate, a dielectric window connected to a top portion of the chamber, the dielectric window disposed over the electrostatic chuck, and a Faraday shield. The Faraday shield is disposed inside of the chamber and defined between the electrostatic chuck and the dielectric window. The Faraday shield includes an inner zone having an inner radius range that includes a first and second plurality of slots and an outer zone having an outer radius range that includes a third plurality of slots. The inner zone is adjacent to the outer zone. The Faraday shield also includes a band ring separating the inner zone and the outer zone, such that the first and second plurality of slots do not connect with the third plurality of slots.
    Type: Grant
    Filed: October 23, 2012
    Date of Patent: March 22, 2016
    Assignee: Lam Research Corporation
    Inventors: Maolin Long, Alex Paterson, Ricky Marsh, Ying Wu, John Drewery
  • Patent number: 9287437
    Abstract: A method for monitoring the process of fabricating solar cells generally comprises performing a reaction process in a chamber for a solar cell substructure, wherein the chamber includes a reaction solution that includes at least one chemical component. A concentration value is detected for the chemical component during the reaction process, via a detection assembly that is coupled to the chamber. The method further includes determining whether the detected concentration value is at a predefined threshold concentration level or within a predefined concentration range for the chemical component, via a control assembly that is coupled to the detection assembly. The concentration of the chemical component within the reaction solution is modified, during the reaction process, when the detected concentration value is different from the predefined threshold concentration level or different from the predefined concentration range.
    Type: Grant
    Filed: February 6, 2014
    Date of Patent: March 15, 2016
    Assignee: TSMC Solar Ltd.
    Inventors: Chung-Hsien Wu, Hung-Yu Chang
  • Patent number: 9163309
    Abstract: Generation of byproducts is inhibited in a buffer space even in a single-wafer-type apparatus using the buffer space. A method of manufacturing a semiconductor device includes (a) loading a substrate into a process chamber; (b) supplying a first-element-containing gas via a buffer chamber of a shower head to the substrate placed in the process chamber; (c) supplying a second-element-containing gas to the substrate via the buffer chamber; and (d) performing an exhaust process between (b) and (c), wherein (d) includes: exhausting an atmosphere of the buffer chamber; and exhausting an atmosphere of the process chamber after exhausting the atmosphere of the buffer chamber.
    Type: Grant
    Filed: September 26, 2014
    Date of Patent: October 20, 2015
    Assignee: Hitachi Kokusai Electric, Inc.
    Inventors: Tetsuo Yamamoto, Kazuhiro Morimitsu, Kazuyuki Toyoda, Kenji Ono, Tadashi Takasaki, Ikuo Hirose, Takafumi Sasaki
  • Patent number: 9117862
    Abstract: There is provided a substrate processing apparatus 101, comprising: a substrate holder 217 that holds a plurality of substrates (wafers) 200 in a state of being arranged in a lateral direction (approximately in a horizontal direction) approximately in a vertical posture; a processing tube 205 that houses the substrate holder 217; a throat side sealing part (throat side mechanical flange part) 2190 that air-tightly closes an opening part of the processing tube 205; a rotation part 255 that rotates the substrate holder 217 in a peripheral direction of the substrates, with an arrangement direction (a direction in which the substrates 200 are held) of the plurality of substrates 200 as a rotation axis, wherein the substrate holder 217 includes a fixing part (movable holding part 217c) and a fixture holding part 217a for fixing the substrates 200 approximately in a vertical posture.
    Type: Grant
    Filed: February 8, 2010
    Date of Patent: August 25, 2015
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Hideo Ishizu, Masayuki Suzuki
  • Patent number: 9119283
    Abstract: Systems and methods for performing chamber matching are described. One of the methods for performing chamber matching includes executing a first test within a first plasma chamber to measure a variable and executing a second test within a second plasma chamber to measure the variable. The first and second tests are executed based on one recipe. The method further includes determining a first relationship between the variable measured with the first test and power provided during the first test, determining a second relationship between the variable measured with the second test and power provided during the second test, and identifying power adjustment to apply to the second plasma chamber during a subsequent processing operation based on the first and second relationships. The power adjustment causes the second plasma chamber to perform the processing operation in a processing condition determined using the first plasma chamber.
    Type: Grant
    Filed: May 23, 2013
    Date of Patent: August 25, 2015
    Assignee: Lam Research Corporation
    Inventor: Luc Albarede
  • Publication number: 20150140828
    Abstract: A method of etching an etching target layer containing polycrystalline silicon includes preparing a target object including the etching target layer and a mask formed on the etching target layer; and etching the etching target layer with the mask. Further, the mask includes a first mask portion formed of polycrystalline silicon and a second mask portion interposed between the first mask portion and the etching target layer and formed of silicon oxide. Furthermore, in the etching of the etching target layer, a first gas for etching the etching target layer, a second gas for removing a deposit adhering to the mask, and a third gas for protecting the first mask portion are supplied into a processing vessel in which the target object is accommodated, and plasma of these gases is generated within the processing vessel.
    Type: Application
    Filed: May 27, 2013
    Publication date: May 21, 2015
    Inventor: Masafumi Urakawa
  • Publication number: 20150136171
    Abstract: A plasma ashing system includes a process chamber including a substrate. A carrier gas supply supplies a carrier gas to the processing chamber. A plasma source is configured to create plasma to the process chamber. A liquid injection source is configured to at least one of inject a compound into the plasma or supply the compound into the plasma. The compound is normally a liquid at room temperature and at atmospheric pressure. A controller is configured to control the liquid injection source, to expose the substrate to the plasma for a predetermined period and to purge reactants from the processing chamber after the predetermined period.
    Type: Application
    Filed: November 18, 2013
    Publication date: May 21, 2015
    Applicant: Lam Research Corporation
    Inventors: Carlo Waldfried, Orlando Escorcia
  • Publication number: 20150111388
    Abstract: A substrate processing method for processing a substrate by supplying a processing gas into a processing chamber and allowing the processing gas to react on the substrate in the processing chamber by using a substrate processing apparatus includes the processing chamber accommodating the substrate, a processing gas supply unit for supplying the processing gas into the processing chamber, and a gas exhaust unit, for exhausting the processing chamber, having a turbo molecular pump. The method controls a processing uniformity by controlling a revolution speed of the turbo molecular pump while maintaining a pressure in the processing chamber to a predetermined level when by-products having a larger molecular mass compared to the processing gas are generated by the reaction of the processing gas.
    Type: Application
    Filed: October 17, 2014
    Publication date: April 23, 2015
    Inventors: Hiroyuki TAKAHASHI, Taechun KWON
  • Patent number: 8997686
    Abstract: A system for and method of delivering pulses of a desired mass of gas to a tool is described.
    Type: Grant
    Filed: September 29, 2010
    Date of Patent: April 7, 2015
    Assignee: MKS Instruments, Inc.
    Inventor: Junhua Ding
  • Patent number: 8992722
    Abstract: A direct drive arrangement for controlling pressure volume within a confinement region of a processing chamber of a plasma processing system during substrate processing is provided. The confinement region is a chamber volume surrounded by confinement rings is provided. The arrangement includes plunger assemblies configured for changing the pressure of motor assemblies configured for vertically moving the plunger assemblies, and recording set point position values for the plunger assemblies. The arrangement further includes a set of circuits configured for driving the motor assemblies to move the plunger assemblies to change the pressure volume within the confinement region. The set of circuits is also configured for providing power to the motor assemblies. The set of circuits is further configured for receiving the set point position values from the motor assemblies.
    Type: Grant
    Filed: September 1, 2009
    Date of Patent: March 31, 2015
    Assignee: Lam Research Corporation
    Inventors: John W. Rasnick, Fred D. Egley
  • Patent number: 8986492
    Abstract: A method for forming an array area with a surrounding periphery area, wherein a substrate is disposed under an etch layer, which is disposed under a patterned organic mask defining the array area and covers the entire periphery area is provided. The patterned organic mask is trimmed. An inorganic layer is deposited over the patterned organic mask where a thickness of the inorganic layer over the covered periphery area of the organic mask is greater than a thickness of the inorganic layer over the array area of the organic mask. The inorganic layer is etched back to expose the organic mask and form inorganic spacers in the array area, while leaving the organic mask in the periphery area unexposed. The organic mask exposed in the array area is stripped, while leaving the inorganic spacers in place and protecting the organic mask in the periphery area.
    Type: Grant
    Filed: February 9, 2012
    Date of Patent: March 24, 2015
    Assignee: Lam Research Corporation
    Inventors: S. M. Reza Sadjadi, Amit Jain
  • Patent number: 8986493
    Abstract: When a substrate is etched by using a processing gas including a first gas containing halogen and carbon and having a carbon number of two or less per molecule, while supplying the processing gas toward the substrate independently from a central and a peripheral portion of a gas supply unit, which face the central and the periphery part of the substrate respectively, the processing gas is supplied such that a gas flow rate is greater in the central portion than in the peripheral portion. When the substrate is etched by using a processing gas including a second gas containing halogen and carbon and having a carbon number of three or more per molecule, the processing gas is supplied such that a gas flow rate is greater in the peripheral portion than in the central portion.
    Type: Grant
    Filed: December 18, 2012
    Date of Patent: March 24, 2015
    Assignee: Tokyo Electron Limited
    Inventors: Shigeru Tahara, Masaru Nishino
  • Publication number: 20150064924
    Abstract: In a method for etching an organic film according to an embodiment, a target object that has an organic film is set in a processing chamber. Then, a processing gas containing COS gas and O2 gas is supplied to the processing chamber and a microwave for plasma excitation is supplied to the inside of the processing chamber to etch the organic film.
    Type: Application
    Filed: March 26, 2013
    Publication date: March 5, 2015
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Hiroyuki Takaba, Hironori Matsuoka
  • Publication number: 20150064922
    Abstract: Provided is a method of selectively removing a first region from a workpiece which includes the first region formed of silicon oxide and a second region formed of silicon. The method performs a plurality of sequences. Each sequence includes: forming a denatured region by generating plasma of a processing gas that contains hydrogen, nitrogen, and fluorine within a processing container that accommodates the workpiece so as to denature a portion of the first region, and removing the denatured region within the processing container. In addition, a sequence subsequent to a predetermined number of sequences after a first sequence among the plurality of sequences further includes exposing the workpiece to plasma of a reducing gas which is generated within the processing container, prior to the forming of the denatured region.
    Type: Application
    Filed: August 27, 2014
    Publication date: March 5, 2015
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Akinori KITAMURA, Hiroto OHTAKE, Eiji SUZUKI
  • Publication number: 20150064810
    Abstract: An embodiment low contamination chamber includes a gas inlet, an adjustable top electrode, an adjustable bottom electrode, and an outlet. The chamber is configured to adjust a distance between the adjustable top and bottom electrodes in accordance with a desired density of plasma disposed between the top electrode and the bottom electrode.
    Type: Application
    Filed: August 30, 2013
    Publication date: March 5, 2015
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ping-Yin Liu, Xin-Hua Huang, Lee-Chuan Tseng, Lan-Lin Chao
  • Publication number: 20150064920
    Abstract: A plasma processing system and method includes a processing chamber, and a plasma processing volume included therein. The plasma processing volume having a volume less than the processing chamber. The plasma processing volume being defined by a top electrode, a substrate support surface opposing the surface of the top electrode and a plasma confinement structure including at least one outlet port. A conductance control structure is movably disposed proximate to the at least one outlet port and capable of restricting an outlet flow through the at least one outlet port to a first flow rate and capable of increasing the outlet flow through the at least one outlet port to a second flow rate, wherein the conductance control structure restricts the outlet flow rate moves between the first flow rate and the second flow rate corresponding to a selected processing state set by the controller during a plasma process.
    Type: Application
    Filed: August 28, 2013
    Publication date: March 5, 2015
    Applicant: Lam Research Corporation
    Inventors: Rajinder Dhindsa, Harmeet Singh, Sang Ki Nam
  • Publication number: 20150053346
    Abstract: A plasma processing apparatus includes a flow splitter for dividing a common gas into two common gas streams of common gas branch lines. A central introduction portion connected to one of the common gas branch lines supplies a common gas to a central portion of a substrate to be processed. A peripheral introducing portion connected to the other one of the common gas branch lines supplies the common gas to a peripheral portion of the substrate. The peripheral introducing portion has peripheral inlets arranged about a circumferential region above the substrate. An additive gas line is connected to an additive gas source to add an additive gas to at least one of the common gas branch lines. In addition, an electron temperature of a plasma in a region where the peripheral inlets are disposed is lower than that in a region where the introduction portion is disposed.
    Type: Application
    Filed: November 4, 2014
    Publication date: February 26, 2015
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Naoki MATSUMOTO, Wataru YOSHIKAWA, Yasuhiro SEO, Kazuyuki KATO
  • Patent number: 8956499
    Abstract: An object is to provide a plasma processing device capable of accurately judging whether or not the proper maintenance time has come which is necessary for maintaining an operation state of a device in the best condition. A discharge detection sensor 23, in which a dielectric member 21 and a probe electrode unit 22 are combined with each other, is attached to an opening portion 2a provided in a lid portion 2 composing a vacuum chamber.
    Type: Grant
    Filed: August 21, 2008
    Date of Patent: February 17, 2015
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Tatsuhiro Mizukami, Kiyoshi Arita, Masaru Nonomura
  • Publication number: 20150032245
    Abstract: A method includes receiving a voltage and current measured at an output of an RF generator of a first plasma system and calculating a first model etch rate based on the voltage and current, and a power. The method further includes receiving a voltage and current measured at an output of the RF generator of a second plasma system, determining a second model etch rate based on the voltage and current at the output of the RF generator of the second plasma system, and comparing the second model etch rate with the first model etch rate. The method includes adjusting a power at the output of the RF generator of the second plasma system to achieve the first model etch rate associated with the first plasma system upon determining that the second model etch rate does not match the first model etch rate. The method is executed by a processor.
    Type: Application
    Filed: April 2, 2014
    Publication date: January 29, 2015
    Applicant: Lam Research Corporation
    Inventors: John C. Valcore, JR., Harmeet Singh, Henry Povolny
  • Publication number: 20150020971
    Abstract: A method for processing substrate in a chamber, which has at least one plasma generating source, a reactive gas source for providing reactive gas into the interior region of the chamber, and a non-reactive gas source for providing non-reactive gas into the interior region, is provided. The method includes performing a mixed-mode pulsing (MMP) preparation phase, including flowing reactive gas into the interior region and forming a first plasma to process the substrate that is disposed on a work piece holder. The method further includes performing a MMP reactive phase, including flowing at least non-reactive gas into the interior region, and forming a second plasma to process the substrate, the second plasma is formed with a reactive gas flow during the MMP reactive phase that is less than a reactive gas flow during the MMP preparation phase. Perform the method steps a plurality of times.
    Type: Application
    Filed: October 9, 2014
    Publication date: January 22, 2015
    Inventor: Keren Jacobs Kanarik
  • Publication number: 20150017810
    Abstract: The embodiments herein generally deal with semiconductor processing methods and apparatus. More specifically, the embodiments relate to methods and apparatus for etching a semiconductor substrate. A partially fabricated semiconductor substrate is provided in a reaction chamber. The reaction chamber is divided into an upper sub-chamber and a lower sub-chamber by a grid assembly. Plasma is generated in the upper sub-chamber, and the substrate is positioned in the lower sub-chamber. The grid assembly includes at least two grids, each of which is negatively biased, and each of which includes perforations which allow certain species to pass through. The uppermost grid is negatively biased in order to repel electrons. The lowermost grid is biased further negative (compared to the uppermost grid) in order to accelerate positive ions from the upper to the lower sub-chamber. Etching gas is supplied directly to the lower sub-chamber.
    Type: Application
    Filed: July 11, 2013
    Publication date: January 15, 2015
    Inventor: Joydeep Guha
  • Publication number: 20150011088
    Abstract: Methods are disclosed for depositing material onto and/or etching material from a substrate in a surface processing tool having a processing chamber, a controller and one or more devices for adjusting the process parameters within the chamber. The method comprises: the controller instructing the one or more devices according to a series of control steps, each control step specifying a defined set of process parameters that the one or more devices are instructed to implement, wherein at least one of the control steps comprises the controller instructing the one or more devices to implement a defined set of constant process parameters for the duration of the step, including at least a chamber pressure and gas flow rate through the chamber, which duration is less than the corresponding gas residence time (Tgr) of the processing chamber for the step.
    Type: Application
    Filed: February 27, 2013
    Publication date: January 8, 2015
    Inventors: Mark Edward McNie, Michael Joseph Cooke, Leslie Michael Lea
  • Patent number: 8906194
    Abstract: A method for etching an ultra high aspect ratio feature in a dielectric layer through a carbon based mask is provided. The dielectric layer is selectively etched with respect to the carbon based mask, wherein the selective etching provides a net deposition of a fluorocarbon based polymer on the carbon based mask. The selective etch is stopped. The fluorocarbon polymer is selectively removed with respect to the carbon based mask, so that the carbon based mask remains, using a trimming. The selectively removing the fluorocarbon polymer is stopped. The dielectric layer is again selectively etched with respect to the carbon based mask, wherein the second selectively etching provides a net deposition of a fluorocarbon based polymer on the carbon based mask.
    Type: Grant
    Filed: February 2, 2010
    Date of Patent: December 9, 2014
    Assignee: Lam Research Corporation
    Inventors: Kyeong-Koo Chi, Erik A. Edelberg
  • Patent number: 8906193
    Abstract: A gas supply unit, for supplying a gas into a processing chamber in which a substrate is processed, includes a plurality of gas supply sources, a mixing line for mixing a plurality of gases supplied from the gas supply sources to make a gaseous mixture, a multiplicity of branch lines for branching the gaseous mixture to be supplied to a multiplicity of places in the processing chamber, and an additional gas supply unit for supplying a specified additional gas to a gaseous mixture flowing in at least one branch line. The gas supply unit also includes pressure gauges and valves for adjusting gas flow rates in the branch lines, respectively, and a pressure ratio controller for controlling that gaseous mixtures branched into the branch lines to have a specified pressure ratio by adjusting opening degrees of the valves based on measurement results obtained by using the pressure gauges.
    Type: Grant
    Filed: December 31, 2009
    Date of Patent: December 9, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Kenetsu Mizusawa, Keiki Ito, Masahide Itoh
  • Patent number: 8900401
    Abstract: Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed.
    Type: Grant
    Filed: July 29, 2010
    Date of Patent: December 2, 2014
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Eiji Ikegami, Shoji Ikuhara, Takeshi Shimada, Kenichi Kuwabara, Takao Arase, Tsuyoshi Matsumoto
  • Patent number: 8895454
    Abstract: In an etching method of a multilayer film including a first oxide film and a second oxide film, a high frequency power in etching an organic film is set to be higher than those in etching a first and second oxide films, and high frequency bias powers in the etching of the first and second oxide films are set to be higher than that in the etching of the organic film. In the etching of the first and second oxide films and the organic film, a magnetic field is generated such that horizontal magnetic field components in a radial direction with respect to a central axis line of a target object have an intensity distribution having a peak value at a position far from the central axis line, and a position of the peak value in the etching of the organic film is closer to the central axis line.
    Type: Grant
    Filed: January 20, 2014
    Date of Patent: November 25, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Shinji Himori, Etsuji Ito, Akihiro Yokota, Shu Kusano, Hiroaki Ishizuka, Kazuya Nagaseki
  • Patent number: 8893743
    Abstract: The flow rate controller controlling a flow rate of gas supplied through a gas passage includes: a main gas pipe; a flow rate detecting unit detecting the flow rate of gas supplied through the main gas pipe and outputting a flow rate signal; a flow rate control valve mechanism controlling a flow rate; a conversion data storage unit storing a plurality of pieces of conversion data corresponding to a plurality of gaseous species, to indicate a relationship between a flow rate instruction signal input from outside and a target flow rate; and a flow rate control main body which selects the corresponding conversion data from the conversion data based on a gaseous species selection signal input from outside, calculates the target flow rate based on the flow rate instruction signal, and controls the flow rate control valve mechanism based on the target flow rate and the flow rate signal.
    Type: Grant
    Filed: October 12, 2012
    Date of Patent: November 25, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Tsuneyuki Okabe, Shuji Moriya, Kazushige Matsuno
  • Publication number: 20140329391
    Abstract: A method for etching features with a continuous plasma is provided. A first plasma process is provided, comprising providing a flow of a first process gas into a process chamber, maintaining the continuous plasma, and stopping the flow of the first process gas into the process chamber. A transition process is provided, comprising providing a flow of a transition gas into the process chamber, maintaining the continuous plasma, and stopping the flow of the transition gas into the process chamber. A second plasma process is provided, comprising providing a flow of a second process gas into the process chamber, maintaining the continuous plasma, and stopping the second process gas into the process chamber.
    Type: Application
    Filed: May 1, 2013
    Publication date: November 6, 2014
    Applicant: Lam Research Corporation
    Inventor: Lam Research Corporation
  • Patent number: 8877000
    Abstract: A plasma-processing chamber including pulsed gas injection orifices/nozzles utilized in combination with continuous flow shower head injection orifices is described. The continuous flow shower head injection orifices introduce a continuous flow of gas while the pulsed gas injection orifices/nozzles cyclically inject a high-pressure gas into the chamber. In one embodiment, a central computer may monitor and control pressure measurement devices and utilize the measurements to adjust processing parameters (e.g. pulse duration, pulse repetition rate, and the pulse mass flow rate of processing gases).
    Type: Grant
    Filed: February 26, 2002
    Date of Patent: November 4, 2014
    Assignee: Tokyo Electron Limited
    Inventor: Eric J. Strang
  • Patent number: 8877001
    Abstract: Embodiments of gate valves and methods of using same are provided herein. In some embodiments, a gate valve for use in a process chamber may include a body having an opening disposed therethrough from a first surface to an opposing second surface of the body; a pocket extending into the body from a sidewall of the opening; a gate movably disposed within the pocket between a closed position that seals the opening and an open position that reveals the opening and disposes the gate completely within the pocket; and a shutter configured to selectively seal the pocket when the gate is disposed in the open position. In some embodiments, one or more heaters may be coupled to at least one of the body or the shutter.
    Type: Grant
    Filed: May 7, 2009
    Date of Patent: November 4, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Shin Kitamura, Mitsutoshi Fukada
  • Patent number: 8864931
    Abstract: A method for etching a dielectric layer is provided. A patterned mask with mask features is formed over a dielectric layer. The mask has isolated areas and dense areas of the mask features. The mask is trimmed by a plurality of cycles, where each cycle includes depositing a deposition layer, and selectively etching the deposition layer and the patterned mask. The selective etching selectively trims the isolated areas of the mask with respect to the dense areas of the mask. The dielectric layer is etched using the thus trimmed mask. The mask is removed.
    Type: Grant
    Filed: October 19, 2010
    Date of Patent: October 21, 2014
    Assignee: Lam Research Corporation
    Inventors: Supriya Goyal, Dongho Heo, Jisoo Kim, S. M. Reza Sadjadi
  • Publication number: 20140299152
    Abstract: A plasma processing apparatus includes a slot plate of an antenna and the slot plate has slots arranged in a circumferential direction thereof with respect to an axis line. A microwave is introduced into a processing space from the antenna via a dielectric window, and a through hole is formed in the dielectric window along the axis line. A plasma processing method performed in the plasma processing apparatus includes performing a first cleaning process by radiating the microwave from the antenna and supplying a cleaning gas from a cleaning gas supply system; and performing a second cleaning process by radiating the microwave from the antenna and supplying the cleaning gas from the cleaning gas supply system. A first pressure of the processing space in the performing of the first cleaning process is set to be lower than a second pressure thereof in the performing of the second cleaning process.
    Type: Application
    Filed: October 17, 2012
    Publication date: October 9, 2014
    Inventors: Wataru Yoshikawa, Naoki Matsumoto
  • Publication number: 20140299571
    Abstract: Disclosed are a plasma processing method and a plasma processing apparatus which collectively perform etching under the same etching conditions while suppressing a shape abnormality. The multilayer film material has a polysilicon layer, a first metal layer formed on the polysilicon layer, and a hard mask layer which contains a tungsten layer formed on the first metal layer. In the method, plasma is generated by a mixed gas of a chloride-containing gas which contains a compound containing chlorine and silicon, a compound containing chlorine and boron, or a compound containing chlorine and hydrogen, a chlorine-containing gas which contains chlorine, and a processing gas which contains carbon and fluorine, and the hard mask layer is used as an etching mask so as to perform the etching from a top surface of the first metal layer to a bottom surface of the polysilicon layer.
    Type: Application
    Filed: April 1, 2014
    Publication date: October 9, 2014
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Masayuki SAWATAISHI
  • Patent number: 8851106
    Abstract: A disclosed gas supplying apparatus includes a pressure controller that reduces a primary pressure thereby providing a secondary pressure greater than a process pressure at which a predetermined process is performed and less than the atmospheric pressure in a secondary pipe; a pressure sensor that measures a pressure in the secondary pipe; a first open/close valve provided in the secondary pipe; an open/close valve controller that opens or closes the first open/close valve; a pressure comparator that compares the pressure measured by the pressure sensor in the secondary pipe with a first set pressure that is greater than the process pressure by a predetermined pressure; and a controller that outputs a signal to the open/close valve controller thereby closing the first open/close valve, when the pressure comparator determines that the pressure in the secondary pipe is less than the first set pressure.
    Type: Grant
    Filed: March 1, 2012
    Date of Patent: October 7, 2014
    Assignee: Tokyo Electron Limited
    Inventor: Tsuneyuki Okabe
  • Publication number: 20140290860
    Abstract: A plasma process apparatus that utilizes plasma so as to perform a predetermined process on a substrate, and includes a process chamber that houses a substrate subjected to the predetermined plasma process; a microwave generator; a dielectric window attached to the process chamber and provided with a concave portion provided at an outer surface of the dielectric window opposite to the process chamber and a through hole penetrating the dielectric window to the process chamber; a microwave transmission line; and a first process gas supplying portion including a gas conduit including a first portion provided at a front end and a second portion having a larger diameter than the first portion, the gas conduit being inserted from outside of the process chamber such that the first portion is inserted in the through hole and the second portion is inserted in the concave portion.
    Type: Application
    Filed: April 21, 2014
    Publication date: October 2, 2014
    Applicant: Tokyo Electron Limited
    Inventor: Masahide IWASAKI
  • Patent number: 8833388
    Abstract: According to one embodiment, there is provided pressure controlling apparatus including a detecting unit, an exhaust pipe, a regulating valve, and a pressure controlling unit. The regulating valve includes a valve port, a changing unit, and a slide valve. The valve port is communicated with the exhaust pipe. The changing unit changes a shape of the valve port to a different shape whose center is located near the central axis of the exhaust pipe. The slide valve regulates an opening degree of the valve port changed by the changing unit. The pressure controlling unit controls changing of a shape of the valve port by the changing unit and regulation of an opening degree of the valve port by the slide valve.
    Type: Grant
    Filed: March 9, 2012
    Date of Patent: September 16, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hideo Eto, Makoto Saito, Nobuyasu Nishiyama