Abstract: A color filter substrate and an in-cell touch type display device including the same, in which a low-reflective high-resistance film is disposed on a top face of the color filter substrate. Due to the low-reflective high-resistance film, a finger capacitance is generated, an antistatic path is formed, and reflectance of the display device is improved.

Abstract: A microwave oven includes a cooking cavity having an opening, a source of microwave radiation that transmits microwaves into the cooking cavity, a door positioned adjacent the opening and movable between an open position where the cooking cavity can be accessed through the opening and a closed position where the cooking cavity is inaccessible through the opening. The door further includes a transparent glass panel where the cooking cavity is viewable through the door when the door is in the closed position. The transparent glass panel has at least one surface with a measurable resistance across its surface. The microwave oven further has a circuit connected to the transparent glass panel that measures the sheet resistance of the transparent glass panel.

Abstract: Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate.

Abstract: Provided is a sputtering target having extremely low occurrence of arcing or nodules, and a method for manufacturing such a sputtering target. A flat plate-shaped or cylindrical target material (3, 13) is obtained by processing a material composed of an oxide sintered body. In doing so, a grindstone having a specified grade is used to perform rough grinding of a surface of the material that will become a sputtering surface (5, 15) one or more times in accordance to the grade of the grindstone, after which zero grinding is performed one or more times so that the surface roughness of the sputtering surface (5, 15) has an arithmetic mean roughness Ra of 0.9 ?m or more, a maximum height Rz of 10.0 ?m or less, and RzJIS roughness of 7.0 ?m or less. A sputtering target (1, 11) is obtained by bonding the obtained target material (3, 13) to a backing body (2, 12) by way of a bonding layer (4, 14).

Abstract: The present disclosure provides a mask repairing apparatus, a method for repairing a mask and an evaporation apparatus. The mask repairing apparatus includes: a repairing device configured to repair a portion of a mask to be repaired; and a moving mechanism installed within a region facing towards the mask and configured to drive the repairing device to move to a position which is opposite to the portion of the mask to be repaired.

Abstract: A process for manufacturing a transparent body for use in a touch panel is provided. The process includes: The process includes depositing a first transparent layer stack over a substrate with a first silicon-containing dielectric film, a second silicon-containing dielectric film, and a third silicon-containing dielectric film. The first and the third silicon-containing dielectric films have a low refractive index and the second silicon-containing dielectric film has a high refractive index. The process further includes depositing a transparent conductive film in a manner such that the first transparent layer stack and the transparent conductive film are disposed over the substrate in this order. At least one of the first silicon-containing dielectric film, the second silicon-containing dielectric film, the silicon-containing third dielectric film, or the transparent conductive film is deposited by sputtering from a target.

Abstract: The present disclosure provides an interference filter, a lithography system incorporating an interference filter, and a method of fabricating an interference filter. The interference filter includes a transparent substrate having a front surface and a back surface, a plurality of alternating material layers formed over the front surface of the transparent substrate that form a bandpass filter, and an anti-reflective structure formed over the back surface of the transparent substrate. The alternating material layers alternate between a relatively high refractive index material and a relatively low refractive index material.

Abstract: A method for producing a transparent conductive film includes heat-treating a transparent conductive film comprising a transparent film substrate and a transparent conductive laminate including a first transparent conductive layer and a second transparent conductive layer, so that the first and the second transparent conductive layers in the transparent conductive film are crystallized, wherein the first transparent conductive layer is a first amorphous layer comprising indium oxide or an indium-based complex oxide having a tetravalent metal element oxide, the second transparent conductive layer is a second amorphous layer comprising an indium-based complex oxide having a tetravalent metal element oxide, wherein each of the first and the second contents of the tetravalent metal element oxide content is expressed by the formula: {the amount of the tetravalent metal element oxide/(the amount of the tetravalent metal element oxide+the amount of indium oxide)}×100(%).

Abstract: A method for producing a transparent conductive film includes: forming a transparent conductive coating on at least one surface of an organic polymer film substrate in the presence of inert gas by RF superimposed DC sputtering deposition using an indium-based complex oxide target with a high horizontal magnetic field of 85 to 200 mT at a surface of the target in a roll-to-roll system, wherein the indium-based complex oxide target has a content of a tetravalent metal element oxide of 7 to 15% by weight as calculated by the formula {(the amount of the tetravalent metal element oxide)/(the amount of the tetravalent metal element oxide+the amount of indium oxide)}×100(%), wherein the transparent conductive coating has a thickness in the range of 10 to 40 nm, and the transparent conductive coating has a specific resistance of 1.3×10?4 to 2.8×10?4 ?·cm.

Abstract: The present invention relates to particles with special structure for preventing electrostatic discharge and paste containing the same. The particles having the structure of the present invention can be manufactured easily and economically. Furthermore, electrostatic discharge can be very effectively blocked through the maximized quantum tunneling effect between particles and the particles or paste of the present invention can be easily applied to high density fine circuits.

Abstract: A method for manufacturing an organic light emitting display device includes mounting in a chamber a substrate where a transparent electrode is to be formed and a SnO member that is a source of forming the transparent electrode, injecting argon gas and oxygen into the chamber, and evaporating the SnO member to be deposited on the substrate.

Abstract: A method and device for improving the adhesion of fluorinated transparent conducting oxide films by incorporating a non-conducting, non-fluorinated adhesion layer between a substrate and a transparent conducting oxide.

Abstract: A transparent conductive zinc oxide based film according to the present invention contains Ti, Al and Zn in such a proportion that satisfies the following formulae (1), (2) and (3) in terms of atomic ratio, and has a plurality of surface textures different in size on a surface, wherein a center-line average surface roughness Ra of the surface of the transparent conductive film is 30 nm to 200 nm, and an average value of widths of the surface textures is 100 nm to 10 ?m. 0.001?Ti/(Zn+Al+Ti)?0.079.??(1) 0.001?Al/(Zn+Al+Ti)?0.079??(2) 0.010?(Ti+Al)/(Zn+Al+Ti)?0.

Abstract: Prior electrochromic devices frequently suffer from high levels of defectivity. The defects may be manifest as pin holes or spots where the electrochromic transition is impaired. This is unacceptable for many applications such as electrochromic architectural glass. Improved electrochromic devices with low defectivity can be fabricated by depositing certain layered components of the electrochromic device in a single integrated deposition system. While these layers are being deposited and/or treated on a substrate, for example a glass window, the substrate never leaves a controlled ambient environment, for example a low pressure controlled atmosphere having very low levels of particles. These layers may be deposited using physical vapor deposition.

Abstract: A process for manufacturing a transparent body for use in a touch screen panel is provided.

Abstract: A method of manufacturing an organic light emitting display apparatus, the method includes loading a substrate on a moving unit, determining an angle formed between a side of the substrate and an opening in a patterning slit sheet, rotating the patterning slit sheet by two X motors so that the side of the substrate and the opening in a patterning slit sheet extend along the same direction and forming a layer on the substrate while conveying the substrate on the moving unit in the first direction in a chamber. The patterning slit sheet moves along a direction perpendicular to the first direction during the forming the layer on the substrate so that a deposition layer having a linear pattern that extends along the first direction is formed on the substrate.

Abstract: A double-sided transparent conductive film and a method for manufacturing the same that may not only promote simplification of a touch panel structure and simplification of processes but also having an excellent visibility characteristic is presented. A double-sided transparent conductive film having excellent visibility in accordance with the present invention comprises a transparent base film; a first and a second hard coating layers respectively formed on both sides of the transparent base film; a first and a second undercoating layers sequentially laminated on the first hard coating layer; a third and a fourth undercoating layers sequentially laminated on the second hard coating layer; and a first and a second transparent conductive layers respectively formed on the second and fourth undercoating layer.

Abstract: The invention provides a coater, and methods of using the coater, for depositing thin films onto generally-opposed major surfaces of a sheet-like substrate. The coater has a substrate transport system adapted for supporting the substrate in a vertical-offset configuration wherein the substrate is not in a perfectly vertical position but rather is offset from vertical by an acute angle. The transport system defines a path of substrate travel extending through the coater. The transport system is adapted for conveying the substrate along the path of substrate travel. Preferably, the transport system includes a side support for supporting a rear major surface of the substrate. The preferred side support bounds at least one passage through which coating material passes when such coating material is deposited onto the substrate's rear major surface. Preferably, the coater includes at least one coating apparatus (e.g.

Abstract: Disclosed is a manufacturing method for a transparent electroconductive film having excellent light-transmitting properties and low specific resistance. The present invention provides a method of manufacturing a transparent electroconductive film which comprises a film substrate and a crystallized indium tin oxide layer formed on the film substrate. The method comprises: a step of placing the film substrate in a sputtering apparatus using an indium tin oxide as a target material, and depositing indium tin oxide including amorphous parts on the film substrate by a magnetron sputtering process in which a horizontal magnetic field on the target material is set to 50 mT or more; and a step of, after the step of depositing indium tin oxide including amorphous parts, subjecting the indium tin oxide including amorphous parts to a heating treatment to thereby crystallize the indium tin oxide including amorphous parts to form the crystallized indium tin oxide layer.

Abstract: A method of deposition of a transparent conductive film from a metallic target is presented. A method of forming a transparent conductive oxide film according to embodiments of the present invention include depositing the transparent conductive oxide film in a pulsed DC reactive ion process with substrate bias, and controlling at least one process parameter to affect at least one characteristic of the conductive oxide film. The resulting transparent oxide film, which in some embodiments can be an indium-tin oxide film, can exhibit a wide range of material properties depending on variations in process parameters. For example, varying the process parameters can result in a film with a wide range of resistive properties and surface smoothness of the film.

Abstract: The present invention provides a complex oxide sintered body 10 wherein Zr/(In+Zr+Y) is 0.05 to 4.5 at % and Y/(In+Zr+Y) is 0.005 to 0.5 at % in an atomic ratio when indium, zirconium, and yttrium are designated by In, Zr, and Y, respectively. Moreover, the present invention provides a sputtering target including the complex oxide sintered body 10 and a transparent conductive oxide film obtained by sputtering the sputtering target.

Abstract: A method for the production of a transparent conductor deposit on a substrate, the method comprising: providing a substrate formed from a first material; depositing a film of a second material on the substrate; causing the film to crack so as to provide a plurality of recesses; depositing a conductive material in the recesses; and removing the film from the substrate so as to yield a transparent conductive deposit on the substrate.

Abstract: The present invention provides a film with a transparent electroconductive membrane including a transparent base material and a transparent electroconductive membrane. The transparent electroconductive membrane has on its surface crystalline secondary particles having an average particle diameter of 0.1 to 1 ?m in an amount of 1 to 100 particles/?m2. A substrate for a display, a display, a liquid crystal display device, and an organic EL element using the film with a transparent electroconductive membrane are also provided.

Abstract: Embodiments of the invention generally provide electrochromic devices and materials and processes for forming such electrochromic devices and materials. In one embodiment, an electrochromic device contains a lower transparent conductor layer disposed on a substrate, wherein an upper surface of the lower transparent conductor layer has a surface roughness of greater than 50 nm and a primary electrochromic layer having planarizing properties is disposed on the lower transparent conductor layer. The upper surface of the primary electrochromic layer has a surface roughness less than the surface roughness of upper surface of the lower transparent conductor layer, such as about 50 nm or less.

Abstract: A p-type transparent conductive material can comprise a thin film of BCSF on a substrate where the film has a conductivity of at least 1 S/cm. The substrate may be a plastic substrate, such as a polyethersulfone, polyethylene terephthalate, polyimide, or some other suitable plastic or polymeric substrate.

Abstract: A method of sputter coating a glass substrate includes providing a glass substrate and providing a sputtering assembly for sputtering a coating onto the glass substrate in a vacuum deposition chamber. The sputtering assembly includes a backing plate and a separating element disposed on the backing plate. At least one target element is provided and disposed at and in contact with a surface of the separating element. The target element is not bonded the separating element when disposed at and in contact with the surface of the separating element. An expansion gap is provided at or adjacent to the target element to allow for expansion of the target element during the sputtering process. Material from the target element is sputtered and the target element is heated to a substantially elevated temperature during the sputtering process. The sputtering process coats a surface of the glass substrate with the target element material.

Abstract: There is provided a method for manufacturing a nitride semiconductor light emitting device, including: forming a light emitting structure including first and second conductive nitride semiconductor layers on a substrate and an active layer formed therebetween; forming the first conductive nitride semiconductor layer, the active layer, and the second conductive nitride semiconductor layer in sequence; forming a first electrode connected to the first conductive nitride semiconductor layer; forming a photo-resist layer on the second conductive nitride semiconductor layer so as to expose a portion of the semiconductor layer; and removing the photo-resist layer after a reflective metal layer and a barrier metal layer serving as a second electrode structure are successively formed on the second conductive nitride semiconductor layer exposed by the photo-resist layer.

Abstract: One embodiment of the present invention provides a sputtering system for large-scale fabrication of solar cells. The sputtering system includes a reaction chamber, a rotary target situated inside the reaction chamber which is capable of rotating about a longitudinal axis, and an RF power source coupled to at least one end of the rotary target to enable RF sputtering. The length of the rotary target is between 0.5 and 5 meters.

Abstract: Disclosed are surface-textured conductive glass for solar cells, and a preparation method and application thereof. In the surface-textured conductive glass for solar cells, a transparent conductive film is coated on a glass substrate, and the upper surface of the transparent conductive film is textured with nano/micro-scopic U-shaped pits uniformly distributed. The preparation method comprises: coating the transparent conductive film by magnetron sputtering, and then absorbing nano/micro-spheres onto the surface of the transparent conductive film as a mask by using an immersion coating method, followed by increasing the thickness of the transparent conductive film in gaps among the nano/micro-spheres by magnetron sputtering, and finally removing the nano/micro-spheres by using an ultrasonic vibration method to realize the large-scale and low-cost production of the conductive glass with nano/microscopic U-shaped surface texture.

Abstract: Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber. The method may also comprise depositing a metal oxide on the target in the process chamber to form a thin film having enhanced optical properties without substantially decreasing electrical quality.

Abstract: Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target (110) doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber (100). The method may also comprise depositing a metal oxide on the target (110) to form a thin film having enhanced optical properties without substantially decreasing electrical quality.

Abstract: A method of deposition of a transparent conductive film from a metallic target is presented. A method of forming a transparent conductive oxide film according to embodiments of the present invention include depositing the transparent conductive oxide film in a pulsed DC reactive ion process with substrate bias, and controlling at least one process parameter to affect at least one characteristic of the conductive oxide film. The resulting transparent oxide film, which in some embodiments can be an indium-tin oxide film, can exhibit a wide range of material properties depending on variations in process parameters. For example, varying the process parameters can result in a film with a wide range of resistive properties and surface smoothness of the film.

Abstract: A scintillator panel includes a substrate, a reflection layer, a scintillator layer and a transmission oxide layer. The substrate transmits the X-ray. The reflection layer is formed on the substrate to transmit the X-ray and reflect the visible light. The scintillator layer is formed on the reflection layer to convert the X-ray into the visible light. And, the oxide layer seals the scintillator layer, transmits the visible light and blocks the penetration of moisture.

Abstract: One embodiment of the present invention provides a conductive oxide film having high conductivity and high transmittance of visible light. The conductive oxide film having high conductivity and high transmittance of visible light can be obtained by forming a conductive oxide film at a high substrate temperature in the film formation and subjecting the conductive oxide film to nitrogen annealing treatment. The conductive oxide film has a crystal structure in which c-axes are aligned in a direction perpendicular to a surface of the film.

Abstract: A coated article is provided with at least one infrared (IR) reflecting layer. In certain embodiments, the coating is provided with at least one layer of zirconium silicon oxynitride (e.g., ZrSiOxNy), for improving the coated article's ability to block of UV radiation. The oxygen content of the layer may be adjusted in order to tune the coating's visible transmission versus UV blockage.

Abstract: The present invention relates to a double-sided conductive film having a relatively high transmittance, which can be widely applied in the field of manufacturing flat panel displays. The flexible transparent film is polyethylene terephthalate, the flexible transparent film is a flexible material having an index of refraction of 1.4 to 1.5; the hardened layer is a surface hardening treatment layer of the flexible transparent film, and is made by coating the upper and the lower surfaces of the flexible transparent film; the adhesive layer is sputtered on a surface of the hardened layer by magnetron sputtering, the main purpose of forming the adhesive is to make the hardened layer and the high refractive index dielectric layer bonded together more firmly; the high refractive index dielectric layer is made of a high refractive index material having a refractive index of 1.8 to 2.5; the low refractive index dielectric layer is made of a low refractive index material having a refractive index of 1.4 to 1.8.

Abstract: A device includes a back contact, an absorber layer coupled to the back contact, a buffer layer coupled to the absorber layer; and an amorphous transparent conductive layer coupled to the buffer layer, wherein the amorphous transparent conductive phase is characterized by, as a function of composition, i) a range of band gaps and ii) a range of work functions.

Abstract: The invention relates to the semiconductor material manufacturing technical field. A multi-elements-doped zinc oxide film as well as manufacturing method and application in photo-electric devices thereof are provided. The manufacturing method comprises the following steps: (1) mixing the powder of Ga2O3, Al2O3, SiO2 and ZnO according to the following percentage by mass: 0.5%˜10% of Ga2O3, 0.5%˜5% of Al2O3, 0.5%˜1.5% of SiO2, and the residue of ZnO; (2) sintering the powder mixture as target material; (3) putting the target material into a magnetic sputtering chamber, evacuating, setting-up work pressure of 0.2 Pa-5 Pa, introducing mixed gas of inert gas and hydrogen with a flow rate of 15 sccm˜25 sccm, adopting a sputtering power of 40 W˜200 W, and sputtering on the substrate to obtain the multi-elements-doped zinc oxide film.

Abstract: A transparent conductive laminate having a completely crystallized, transparent conductive layer on a substrate comprising an organic polymer molding, and a process for producing the same. The transparent conductive layer is excellent in transparency and wet heat confidence and is not excessively low in specific resistivity. The transparent conductive laminate includes a substrate comprising an organic polymer molding having formed thereon a completely crystallized, transparent conductive layer comprising an In.Sn composite oxide having an amount of Sn atom of 1 to 6% by weight based on the total weight of In atom and Sn atom and having a film thickness of 15 to 50 nm, a Hall mobility of 30 to 45 cm2/V·S, and a carrier density of from 2×1020/cm3 to 6×1020/cm3.

Abstract: A method for producing a transparent conductive film including a transparent film substrate and a crystalline transparent conductive layer, including: a first depositing a first indium-based complex oxide having a first tetravalent metal element oxide on the transparent film substrate; and a second depositing indium oxide or a second indium-based complex oxide and lower than the tetravalent metal element oxide content of the indium-based complex oxide used in the first depositing by sputtering to form an amorphous transparent conductive layer, and crystallizing the amorphous transparent conductive layer. The method allows a reduction in crystallization time.

Abstract: The present invention provides a liquid crystal display device, which includes: a plurality of pixel units. Each of the pixel units further includes: a liquid crystal layer; a pixel electrode and corresponding electrode, disposed on two opposite sides of liquid crystal layer; the corresponding electrode further including: first electrode pattern, disposed oppositely to pixel electrode; second electrode pattern, connected to the first electrode pattern, for applying an external voltage to the first electrode pattern so as to form an alignment electric field for liquid crystal layer between the first electrode pattern and pixel electrode. The present invention changes the way external voltage is applied, and introduce external voltage from one side of color filter substrate to improve success rate of liquid crystal alignment, reduce energy-consumption and reduce waste.

Abstract: A transparent electrode and method for manufacturing the same are disclosed. The major integrants of the transparent electrode comprise a graphene and a nanofiber. The nanofiber exhibits a light-permeable network structure to increase the light transmittance of the transparent electrode. The graphene is absorbed on the surface of the nanofiber to form a conductive light-permeable network structure. And the unique properties of the graphene lead an improvement of the mechanical strength property of the transparent electrode.

Abstract: Disclosed is a highly productive method for manufacturing a transparent conductive film. The method includes the step of sputter depositing a transparent, amorphous tin-indium oxide conductive layer on a transparent substrate. The surface of the substrate, on which the transparent conductive layer is formed, has an arithmetic mean roughness Ra of 1.0 or less. The sputter depositing step is performed under an atmosphere having a water partial pressure of 0.1% or less based on an AR gas partial pressure at a base material temperature of more than 100° C. and 200° C. or less, using a metal target or oxide target in which the amount of tin atoms is more than 6% by weight and 15% by weight or less, based on the total weight of indium and tin atoms.

Abstract: The present invention relates to a glass product, comprising a glass substrate with a transparent and conductive indium tin oxide layer having a covering layer, which forms a redox barrier for the indium tin oxide layer, wherein the indium tin oxide layer is obtained by pulsed, highly ionizing high-power magnetron sputtering (HPPMS) in which—the pulses of the magnetron have a peak power density greater than 1.5 kW/cm2,—the pulses of the magnetron have a time duration that is ?200 ?s, and—the mean current flow density rise upon ignition of the plasma within a time interval that is ?0.025 ms is at least 106 ?(ms cm2), and the indium tin oxide layer has a crystalline structure, in such a way that the (222)-reflection of an X-ray diffraction spectrum after the production of the indium tin oxide layer is shifted relative to the powder spectrum of indium tin oxide by a maximum of 1 degree, preferably by 0.3 degrees to 0.

Abstract: A coated article is provided that may be heat treated in certain example embodiments. A graded layer (e.g., contact layer or other suitable layer) is formed by initially sputter-depositing a layer, and thereafter ion beam treating the sputter-deposited layer with at least reactive gas ions in order to form a graded layer. In certain example embodiments, the result is a coated article that has improved visible transmission and/or durability, without sacrificing optional heat treatability.

Abstract: Certain example embodiments of this invention relate to techniques for making a coated article including a transparent conductive indium-tin-oxide (ITO) film supported by a heat treated glass substrate. A substantially sub-oxidized ITO or metallic indium-tin (InSn) film is sputter-deposited onto a glass substrate at room temperature. The glass substrate with the as-deposited film thereon is subjected to elevated temperatures. Thermal tempering or heat strengthening causes the as-deposited film to be transformed into a crystalline transparent conductive ITO film. Advantageously, this may reduce the cost of touch panel assemblies, e.g., because of the higher rates of the ITO deposition in the metallic mode. The cost of touch-panel assemblies may be further reduced through the use of float glass.

Abstract: A method of manufacturing a conductive film roll includes a first step of sequentially laminating a first transparent conductor layer and a first copper layer on one side of a film base by sputtering and winding up a first laminated body obtained by sputtering to form a first roll, a second step of storing the first roll in an atmosphere for 30 hours or more and forming, on a surface of the first copper layer, an oxide membrane layer containing copper(I) oxide, and a third step of sequentially laminating, while unwinding the first roll, a second transparent conductor layer and a second copper layer on another side of the film base by sputtering and winding up a second laminated body obtained by sputtering to form a second roll.

Abstract: A target for sputtering or a tablet for ion plating, which enables to attain high rate film-formation and a nodule-less, an oxide sintered body suitable for obtaining the same and a production method therefor, and a transparent conductive film having low absorption of blue light and low specific resistance, obtained by using the same. It is provided by an oxide sintered body having indium and gallium as an oxide, characterized in that an In2O3 phase with a bixbyite-type structure forms a major crystal phase, and a GaInO3 phase of a ?-Ga2O3-type structure, or GaInO3 phase and a (Ga,In)2O3 phase is finely dispersed therein, as a crystal grain having an average particle diameter of equal to or smaller than 5 ?m, and a content of gallium is equal to or higher than 10% by atom and below 35% by atom as atom number ratio of Ga/(In+Ga) or the like.

Abstract: A sintered composite oxide 2 composed mainly of zinc, aluminum, titanium and oxygen, the atomic ratio of the elements satisfying the following equations (1) to (3), the sintered composite oxide 2 comprising particles having a hexagonal wurtzite structure containing zinc oxide as the major component and having a mean particle size of no greater than 20 ?m, and particles having a ZnTiO3-like structure and/or Zn2Ti3O8-like structure containing aluminum and titanium and having a mean particle size of no greater than 5 ?m, and containing no particles with a spinel oxide structure of zinc aluminate with zinc and aluminum in solid solution, and a manufacturing method for the same. (Al+Ti)/(Zn+Al+Ti)=0.004-0.055??(1) Al/(Zn+Al+Ti)=0.002-0.025??(2) Ti/(Zn+Al+Ti)=0.002-0.048??(3) [In the equations, Al, Ti and Zn represent the contents (atomic percents) of aluminum, titanium and zinc, respectively.

Abstract: An object of the present invention is to manufacture a long transparent conductive film comprising a transparent film substrate and a crystalline indium composite oxide film formed on the transparent film substrate. The manufacturing method of the present invention includes an amorphous laminate formation step of forming an amorphous film of an indium composite oxide containing indium and a tetravalent metal on the long transparent film substrate with a sputtering method, and a crystallization step of continuously feeding the long transparent film substrate on which the amorphous film is formed into a furnace and crystallizing the amorphous film. The temperature inside the furnace in the crystallization step is preferably 170 to 220° C. The change rate of the film length in the crystallization step is preferably +2.5% or less.