Transparent Conductor Patents (Class 204/192.29)
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Patent number: 7153453Abstract: There is provided an amorphous transparent conductive thin film with a low resistivity, a low absolute value for the internal stress of the film, and a high transmittance in the visible light range, an oxide sintered body for manufacturing the amorphous transparent conductive thin film, and a sputtering target obtained therefrom. An oxide sintered body is obtained by: preparing In2O3 powder, WO3 powder, and ZnO powder with an average grain size of less than 1 ?m so that tungsten is at a W/In atomic number ratio of 0.004 to 0.023, and zinc is at a Zn/In atomic number ratio of 0.004 to 0.100; mixing the prepared powder for 10 to 30 hours; granulating the obtained mixed powder until the average grain size is 20 to 150 ?m; molding the obtained granulated powder by a cold isostatic press with a pressure of 2 to 5 ton/cm2, and sintering the obtained compact at 1200 to 1500 degree.C.Type: GrantFiled: April 27, 2005Date of Patent: December 26, 2006Assignee: Sumitomo Metal Mining Co., Ltd.Inventors: Yoshiyuki Abe, Tokuyuki Nakayama, Go Ohara, Riichiro Wake
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Patent number: 7141186Abstract: An oxide sintered body for sputtering target is provided wherein the main component is indium oxide, and it contains titanium such that the atomic ratio of Ti/In is 0.003 to 0.120, and the specific resistance is 1 k.cm or less.Type: GrantFiled: October 28, 2003Date of Patent: November 28, 2006Assignee: Sumitomo Metal Mining Co., Ltd.Inventors: Yoshiyuki Abe, Noriko Ishiyama, Go Ohara
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Patent number: 7135097Abstract: Disclosed is a box-shaped facing-targets sputtering apparatus capable of forming, at low temperature, a compound thin film of high quality while causing minimal damage to an underlying layer.Type: GrantFiled: November 26, 2003Date of Patent: November 14, 2006Assignee: FTS CorporationInventors: Sadao Kadokura, Hisanao Anpuku
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Patent number: 7125503Abstract: A transparent conductive thin film which can be produced easily by sputtering or the like with a sintered target, needs no post-treatment such as etching or grinding, is low in resistance and excellent in surface smoothness, and has a high transmittance in the low-wavelength region of visible rays; and transparent, electroconductive substrate for a display panel and an organic electroluminescence device excellent in light-emitting characteristics, both including the transparent conductive thin film. More particularly, a transparent conductive thin film comprising indium oxide as the major component and silicon as a dopant, having a substantially amorphous structure, wherein silicon is incorporated at 0.5 to 13% by atom on indium and silicon totaled; and a transparent conductive thin film comprising indium oxide as the major component and tungsten and germanium, wherein tungsten is incorporated at a W/In atomic ratio of 0.003 to 0.047 and germanium is incorporated at a Ge/In atomic ratio of 0.001 to 0.190.Type: GrantFiled: May 9, 2005Date of Patent: October 24, 2006Assignee: Sumitomo Metal Mining Co., Ltd.Inventor: Yoshiyuki Abe
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Patent number: 7041430Abstract: Problem to be solved is that when an information recording medium is repeatedly subjected to recording of information several hundreds times, the atoms in a protective layer are diffused and dissolved into a recording layer to lower a reflectivity greatly and make the medium unendurable to many times of overwriting. This problem can be solved by a medium constituted of interference layer 10, interface layer 12, phase-change type recording layer 14, protective layer 13 having a tin content of from 23.3 atomic % to 32.3 atomic %, and a heat sink layer 8 successively formed on substrate 1, as seen from a light-incidence side. By use of this medium, the dissolution of atoms can be prevented, and overwriting for many times can be achieved.Type: GrantFiled: August 16, 2002Date of Patent: May 9, 2006Assignee: Hitachi, Ltd.Inventors: Makoto Miyamoto, Akemi Hirotsune, Toshimichi Shintani, Takahiro Kurokawa, Keikichi Andoo, Yumiko Anzai
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Patent number: 7008519Abstract: The present invention provides an ITO sputtering target for forming a high-resistance transparent conductive film which target can be used virtually in a DC magnetron sputtering apparatus and can form a high-resistance, transparent film, and a method for producing a high-resistance transparent conductive film. The sputtering target for forming a high-resistance transparent conductive film having a resistivity of about (0.8–10)×10?3 ?cm contains indium oxide, an insulating oxide, and optionally tin oxide.Type: GrantFiled: May 23, 2003Date of Patent: March 7, 2006Assignee: Mitsui Mining & Smelting Co., Ltd.Inventors: Seiichiro Takahashi, Makoto Ikeda, Hiroshi Watanabe
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Patent number: 6995891Abstract: An electrochromic device is achieved that exhibits the characteristics of impact-resistant safety glass by starting with a solid electrolyte sheet material and a peripheral sealant material sandwiched between substrates to heat and pressure such that the electrolyte bonds to the treated surfaces of the substrates with an adhesion of at least 1.8 kg/linear cm width causing the electrolyte to exhibit a tensile strength of at least 5 kg/cm2.Type: GrantFiled: July 18, 2003Date of Patent: February 7, 2006Assignees: Schott North America Inc., Magna Donnelly CorporationInventors: Anoop Agrawal, Yasser Elkadi, Torsten Holdmann
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Patent number: 6860974Abstract: There are provided techniques of forming a back reflecting layer with constant characteristics throughout long-term film formation and forming a metal oxide film so as to be able to maintain a current of a bottom cell and thereby keep a short-circuit current Jsc of a solar cell constant over a long period of time. A sputtering method is a method of forming a stack of a metal film and a metal oxide film, comprising the step 1 of forming a metal layer on a substrate, the step 2 of bringing a surface of the metal layer into contact with active oxygen, and the step 3 of forming a metal oxide film thereon after the step 2, wherein in the step 2 an amount of active oxygen at a first substrate position is different from that at a second substrate position.Type: GrantFiled: June 28, 2002Date of Patent: March 1, 2005Assignee: Canon Kabushiki KaishaInventors: Hiroshi Echizen, Yasuyoshi Takai, Akiya Nakayama
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Publication number: 20040238346Abstract: There are provided:Type: ApplicationFiled: June 28, 2004Publication date: December 2, 2004Applicant: SUMITOMO CHEMICAL COMPANY, LIMITEDInventors: Takeshi Hattori, Kunio Saegusa, Yuzo Shigesato
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Publication number: 20040231981Abstract: The present invention provides an ITO sputtering target for forming a high-resistance transparent conductive film which target can be used virtually in a DC magnetron sputtering apparatus and can form a high-resistance, transparent film, and a method for producing a high-resistance transparent conductive film. The sputtering target for forming a high-resistance transparent conductive film having a resistivity of about (0.8-10)×10−3 &OHgr;cm contains indium oxide, an insulating oxide, and optionally tin oxide.Type: ApplicationFiled: May 23, 2003Publication date: November 25, 2004Applicant: MITSUI MINING & SMELTING CO., LTD.Inventors: Seiichiro Takahashi, Makoto Ikeda, Hiroshi Watanabe
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Publication number: 20040231974Abstract: A metal oxide semiconductor gas sensor and a method for production thereof. The sensor comprises a sensor-active metal oxide thin layer applied to a substrate, in contact with at least one electrode. The sensor-active metal oxide thin layer comprises a chromium/titanium oxide (CTO) layer with a thickness of about 10 nm to about 1 &mgr;m. The chromium and titantium layers are applied over each other using thin layer technology and are subsequently tempered.Type: ApplicationFiled: April 20, 2004Publication date: November 25, 2004Inventors: Harald Bottner, Jurgen Wollenstein, Gerd Kuhner
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Patent number: 6822158Abstract: A thin-film solar cell including a transparent electrode layer, a semiconductor photovoltaic conversion layer, a rear transparent electrode layer and a rear reflective metal layer, said layers being formed in this order on a transparent substrate, wherein the rear transparent electrode has a two-layer structure of an ITO or ZnO:Ga layer and a ZnO:Al layer formed in this order on the semiconductor photovoltaic conversion layer.Type: GrantFiled: February 25, 2003Date of Patent: November 23, 2004Assignee: Sharp Kabushiki KaishaInventors: Takashi Ouchida, Hitoshi Sannomiya
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Publication number: 20040222089Abstract: The present invention is directed to a sputtering target which inhibits formation of nodules during sputtering so as to form a transparent conductive film, thereby reliably forming the film, and to a transparent conductive film exhibiting excellent etching processability. The sputtering target is formed of a specific sintered metal oxide product composed of indium oxide, gallium oxide, and zinc oxide (1) or a specific sintered metal oxide product composed of indium oxide, gallium oxide, and germanium oxide (2).Type: ApplicationFiled: March 18, 2004Publication date: November 11, 2004Inventors: Kazuyoshi Inoue, Shigeo Matsuzaki
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Patent number: 6793782Abstract: The invention is a novel sputter deposition process for thin film phosphors that provide high luminance and colors required for TV applications.Type: GrantFiled: December 21, 2001Date of Patent: September 21, 2004Assignee: IFIRE Technology Inc.Inventor: Alexander Kosyachkov
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Publication number: 20040180217Abstract: A sputtering target including indium oxide and tin oxide, the content by percentage of the tin atoms therein being from 3 to 20 atomic % of the total of the indium atoms and the tin atoms, and the maximum grain size of indium oxide crystal in the sputtering target being 5 &mgr;m or less. When a transparent conductive film is formed by sputtering, this sputtering target makes it possible to suppress the generation of nodules on the surface of the target and to conduct the sputtering stably.Type: ApplicationFiled: January 30, 2004Publication date: September 16, 2004Inventors: Kazuyoshi Inoue, Shigeo Matsuzaki
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Publication number: 20040140198Abstract: Disclosed is a method of forming an ITO film by optimized sequential sputter deposition of seed and bulk layers having different sputter process conditions, which is applicable to various display devices, and more particularly, to an organic light-emitting device needing an ultra-planarized surface roughness. In forming a transparent conducting electrode of a display device on a transparent substrate with an ITO film including a seed layer and a bulk layer, a method of forming the ITO film includes a first sputter deposition step of forming the ITO film on the substrate with sputtering gas supplied to an ion source at an ambience of oxygen flowing in the vicinity of the substrate and a second sputter deposition step of forming the ITO film with the sputtering gas supplied to the ion source only, wherein the first and second sputter deposition steps have different process conditions, respectively and wherein the seed and bulk layers are deposited by the first or second sputter deposition step.Type: ApplicationFiled: January 7, 2004Publication date: July 22, 2004Inventors: Jun-Sik Cho, Young-Gun Han, Young-Whoan Beag, Seok-Keun Koh
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Publication number: 20040137280Abstract: A transparent oxide electrode film is provided to have crystalline indium oxide as its main component, in which the indium in the indium oxide is substituted with titanium at a titanium/indium atomic ratio between 0.003 and 0.120, and the resitivity of the transparent oxide electrode film is 5.7×10−4 &OHgr;cm or less, so as to provide excellent transmittance for both the visible light region and the infrared light region, and low resistivity.Type: ApplicationFiled: October 2, 2003Publication date: July 15, 2004Inventors: Yoshiyuki Abe, Noriko Ishiyama
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Publication number: 20040033424Abstract: This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, photonic devices, and more particularly to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template (10) is formed having a substrate (12), a transparent conductive layer (16) formed on a surface (14) of the substrate (12) by low pressure sputtering to a thickness that allows for preferably 90% transmission of ultraviolet light therethrough, and a patterning layer (20) formed on a surface (18) of the transparent conductive layer (16).Type: ApplicationFiled: August 15, 2002Publication date: February 19, 2004Inventors: Albert Alec Talin, Jeffrey H. Baker, William J. Dauksher, Andy Hooper, Douglas J. Resnick
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Patent number: 6685805Abstract: In a method of manufacturing a substrate having a transparent conductive film in which sputtering is carried out on a transparent insulating substrate using an indium oxide/tin oxide target under an atmosphere of a mixed gas containing argon and oxygen, when the ratio of oxygen to argon in the mixed gas is in a suitable range of 0.016 to 0.018, the carrier density of the transparent conductive film becomes a maximum, while the mobility rises progressively as the ratio of oxygen to argon increases. The surface resistance of the transparent conductive film, that is the reciprocal of the product of the carrier density and the mobility, 1/(carrier density×mobility), takes a minimum value when the ratio of oxygen to argon is in the above suitable range. In this case, crystallization of the film is promoted and the percentage change between the surface resistance of the film before heat treatment and the surface resistance of the film after heat treatment can be kept down to within ±10%.Type: GrantFiled: July 20, 2001Date of Patent: February 3, 2004Assignee: Nippon Sheet Glass Co., Ltd.Inventors: Shogo Kiyota, Yukihiro Katoh
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Patent number: 6679977Abstract: A method for producing flat panels for TFT or plasma display applications includes forming a sputter source within a sputter coating chamber, the source having at least two electrically mutually isolated stationery bar-shaped target arrangements. A controlled magnet arrangement provided under each target with a time-varying magnetron field.Type: GrantFiled: September 6, 2002Date of Patent: January 20, 2004Assignee: Unakis Trading AGInventors: Walter Haag, Pius Grunenfelder, Urs Schwendener, Markus Schlegel, Siegfried Krassnitzer
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Patent number: 6660931Abstract: A substrate for a solar cell is provided which comprises a support having a metal surface and a zinc oxide film formed on the metal surface and having a water content of 7.5×10−3 mol/cm3 or less, preferably 4.0×10−4 mol/cm3 or more. Thereby, the increase of series resistance and the generation of shunt are prevented and the efficiency such as Jsc and the chemical stability are improved, thus obtaining a solar cell with a zinc oxide film having optimal overall characteristics.Type: GrantFiled: August 1, 2002Date of Patent: December 9, 2003Assignee: Canon Kabushiki KaishaInventors: Noboru Toyama, Yuichi Sonoda, Yusuke Miyamoto
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Publication number: 20030213967Abstract: A multicolor organic light emitting device employs vertically stacked layers of double heterostructure devices which are fabricated from organic compounds. The vertical stacked structure is formed on a glass base having a transparent coating of ITO or similar metal to provide a substrate. Deposited on the substrate is the vertical stacked arrangement of three double heterostructure devices, each fabricated from a suitable organic material. Stacking is implemented such that the double heterostructure with the longest wavelength is on the top of the stack. This constitutes the device emitting red light on the top with the device having the shortest wavelength, namely, the device emitting blue light, on the bottom of the stack. Located between the red and blue device structures is the green device structure.Type: ApplicationFiled: June 11, 2003Publication date: November 20, 2003Inventors: Stephen R. Forrest, Mark E. Thompson, Paul E. Burrows, Vladimir Bulovic, Gong Gu
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Publication number: 20030201164Abstract: The invention disclosed is a process for fabrication of IR-transparent electrically conductive metal oxide, such as copper aluminum oxide (CuAlxOy), by reactive magnetron co-sputtering from high purity metal targets, such as Cu and Al targets, in an argon/oxygen g as mixture. A preferred embodiment of the present invention is a process for making a metal oxide film having electrical conductivity and infrared transparency. Preferably, the substrate is placed in an environment having argon and oxygen. The process comprises applying between about 0.15 to 10.0% oxygen partial pressure to a substrate and DC-sputter depositing a first layer of conductive metal ions onto the substrate. The first layer has a physical thickness of from about 13 to 20 angstroms. Next, Co-sputter depositing a second layer of infrared transparent delafossite metal oxide onto the first layer with the second layer having a physical thickness of from about 1500 to 5000 angstroms, thereby forming a layer pair.Type: ApplicationFiled: April 29, 2002Publication date: October 30, 2003Inventors: Linda F. Johnson, Mark B. Moran
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Publication number: 20030201165Abstract: A method of film deposition is disclosed, which eliminates the conventional problem that a coating film having a component concentration gradient in the thickness direction and thus having a boundary with a compositional gradient or a coating film in which two or more components coexist as a mixture thereof cannot be stably obtained by sputtering. In the method, two planar cathodes are closely arranged as a pair, and a voltage is applied thereto while alternately inverting the polarities thereof so that when a target A bonded to one of the cathodes is used as a negative electrode, then a target B bonded to the other cathode and differing to the target A in component is used as a positive electrode. The targets A and B are simultaneously bombarded with positive ions while passing a substrate in front of the targets so as to cross the cathodes.Type: ApplicationFiled: April 2, 2003Publication date: October 30, 2003Applicant: NIPPON SHEET GLASS CO., LTD.Inventors: Toshiaki Anzaki, Etsuo Ogino, Takayuki Toyoshima
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Publication number: 20030198808Abstract: The present invention provides a heat shading glass including a glass sheet and a heat shading film formed on the glass sheet. The heat shading film comprises a first metal oxide film, a first Ag film, a second metal oxide film, a second Ag film, and a third metal oxide film, layered in that order on the glass sheet. The oxide films include indium oxide containing tin oxide. An X-ray diffraction chart of the heat shading film shows a diffraction peak of the indium oxide as well as a diffraction peak of the Ag. Thus, as a heat shading laminated glass, it can be used as window glass for buildings or vehicles, has superior visible light transmittance, reflects infrared radiation, has colorless transmission color and reflection color, and has superior durability.Type: ApplicationFiled: December 5, 2000Publication date: October 23, 2003Inventors: Takashi Muromachi, Tatsuya Noguchi, Terufusa Kunisada
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Publication number: 20030164290Abstract: A method of forming an indium tin oxide (ITO) layer on a heat-sensitive substrate. An amorphous ITO layer is formed on the substrate by a sputtering process, wherein the temperature of the sputtering process is controlled at room temperature and, in situ, hydrogen gas with a flow rate of 1˜5 sccm is introduced in the sputtering process. Part of the amorphous ITO layer is removed by an oxalic acid solution to form an amorphous ITO pattern on the substrate. A heat treatment whose temperature is below 150° C. is performed to turn the amorphous ITO pattern into a crystalline ITO layer. Thus, a crystalline and flat ITO layer can be formed on the heat-sensitive substrate.Type: ApplicationFiled: November 22, 2002Publication date: September 4, 2003Inventors: Chi-Lin Chen, Tsung-Neng Liao
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Publication number: 20030150714Abstract: A method of manufacturing a display device having two components, an OLED display formed on a film on one side of a substrate and a touch screen formed on a film on the other side of the substrate, the OLED display including components that are sensitive to high temperatures, includes the steps of: partially forming one of the components on one side of the substrate; applying a protector over the partially constructed component; forming the other component of the display device on the other side of the substrate; removing the protector; and completing the formation of the one component on the one side of the substrate.Type: ApplicationFiled: February 8, 2002Publication date: August 14, 2003Applicant: Eastman Kodak CompanyInventors: Andre D. Cropper, Ronald S. Cok, Rodney Feldman
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Patent number: 6596135Abstract: A sputtering target which comprises an oxide containing Zn, Al and Y, which can be used for a DC sputtering method, and with which a transparent conductive film having a resistivity of from 10−2 to 1010 &OHgr;·cm can be produced stably, and a transparent conductive film which comprises an oxide containing Zn, Al and Y, and which has a resistivity of from 10−2 to 1010 &OHgr;·cm and a low light absorptivity.Type: GrantFiled: August 31, 2000Date of Patent: July 22, 2003Assignee: Asahi Glass Company, LimitedInventor: Akira Mitsui
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Patent number: 6596134Abstract: A multicolor organic light emitting device employs vertically stacked layers of double heterostructure devices which are fabricated from organic compounds. The vertical stacked structure is formed on a glass base having a transparent coating of ITO or similar metal to provide a substrate. Deposited on the substrate is the vertical stacked arrangement of three double heterostructure devices, each fabricated from a suitable organic material. Stacking is implemented such that the double heterostructure with the longest wavelength is on the top of the stack. This constitutes the device emitting red light on the top with the device having the shortest wavelength, namely, the device emitting blue light, on the bottom of the stack. Located between the red and blue device structures is the green device structure.Type: GrantFiled: December 21, 1999Date of Patent: July 22, 2003Assignee: The Trustees of Princeton UniversityInventors: Stephen R. Forrest, Mark E. Thompson, Paul E. Burrows, Vladimir Bulovic, Gong Gu
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Patent number: 6572940Abstract: A glass sheet includes a coating comprising at least one silver layer and inner and outer antireflection layers. The glass sheet is formed by a magnetron sputtering process. The inner antireflection layer is a multiple layer comprising a layer of a titanium oxide applied by medium frequency magnetron sputtering and a layer of a metal oxide between the titanium oxide layer and a silver layer.Type: GrantFiled: February 9, 2000Date of Patent: June 3, 2003Assignee: Flachglas AktiengesellschaftInventors: Axel Noethe, Michael Rissmann, Thomas Paul
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Publication number: 20030085116Abstract: There are provided techniques of forming a back reflecting layer with constant characteristics throughout long-term film formation and forming a metal oxide film so as to be able to maintain a current of a bottom cell and thereby keep a short-circuit current Jsc of a solar cell constant over a long period of time. A sputtering method is a method of forming a stack of a metal film and a metal oxide film, comprising the step 1 of forming a metal layer on a substrate, the step 2 of bringing a surface of the metal layer into contact with active oxygen, and the step 3 of forming a metal oxide film thereon after the step 2, wherein in the step 2 an amount of active oxygen at a first substrate position is different from that at a second substrate position.Type: ApplicationFiled: June 28, 2002Publication date: May 8, 2003Inventors: Hiroshi Echizen, Yasuyoshi Takai, Akiya Nakayama
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Patent number: 6559593Abstract: A method of sputter deposition onto an organic material, wherein the discharge gas of the sputtering operation is a gas having a spectrum of light emission of a lower energy than that of argon.Type: GrantFiled: August 4, 2000Date of Patent: May 6, 2003Assignee: Cambridge Display Technology LimitedInventors: Stephen Karl Heeks, Julian Charles Carter
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Patent number: 6554973Abstract: In a film formation method comprising introducing a sputtering gas into a film forming chamber and forming a film on a substrate therein, the partial pressure of H2O in an atmosphere inside the film forming chamber is controlled so as to satisfy prescribed conditions, thereby forming a reflective layer of a prescribed reflectance on the substrate, thereby providing a film formation method using sputtering and a production method of a photovoltaic element using the film formation method that attain stable good film formation even during long-time sputter film formation, can constantly form a reflective film with a desired reflectance, has excellent workability and durability, and constantly attain high photoelectric conversion efficiency.Type: GrantFiled: May 31, 2001Date of Patent: April 29, 2003Assignee: Canon Kabushiki KaishaInventor: Akiya Nakayama
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Patent number: 6555233Abstract: In a sputtering process of forming a transparent electrode film (13) on a color filter (14), the dielectric breakdown of a peripheral portion of the color pattern film (10) due to abnormal discharge is prevented. A metal mask (8) has a mask body (8b) provided with openings (8a) having a shape corresponding to that of the color pattern films (10) formed on a glass substrate (9) Stepped portions (8d) are formed by recessing brim portions (8c) of the openings (8a) facing the color filters (14). Gaps (11) are formed between the mask body (8b) and peripheral portions of the color pattern films (10) of the color filters (14). The mask body (8b) is provided on the stepped portions (8d) with conductive projections (12). The conductive projections (12) come into electrical contact with black shading strips (10b) formed in the peripheral portions of the color pattern films (10) of the color filters (14).Type: GrantFiled: October 5, 2001Date of Patent: April 29, 2003Assignee: Dai Nippon Printing Co., Ltd.Inventors: Akira Shishido, Atsutoshi Yamada
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Patent number: 6528442Abstract: To provide an optically transparent film containing 0.01 to 20% by weight glass forming oxide consisting of Nb2O5, V2O5, B2O3, SiO2, and P2O6; 0.01 to 20% by weight Al2O3 or Ga2O3; and 0.01 to 5% by weight hard oxide of ZrO2 and TiO2 as required; balance being ZnO, and a sputtering target for forming such a film. This sputtering target reduces occurrence of particles during sputtering, decreases the number of interruption or discontinuance of sputtering to improve production efficiency, and forms a protective film for optical disks with large transmittance and low reflectance.Type: GrantFiled: December 7, 2000Date of Patent: March 4, 2003Assignee: Nikko Materials Company, LimitedInventors: Katsuo Kuwano, Hideo Takami
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Patent number: 6495000Abstract: A system and method have been provided for an improved oxide deposition process using a DC sputtering magnetron. The invention prolongs the useful life of the anode by providing shielded electron collection surfaces, to minimize the deposition of insulator material on the anode. Specifically, the anode has a fin with a bottom electron collection surface that is shielded from the target material deposition. A small electro-magnet helps deflect the flow of electrons to the bottom surface of the fin. Vias in the fin promote the flow of electrons to the fin top surface, which is also shielded from the deposition material, even if deposition material begins to accumulate on the fin bottom surface.Type: GrantFiled: July 16, 2001Date of Patent: December 17, 2002Assignee: Sharp Laboratories of America, Inc.Inventors: James Mikel Atkinson, Hirohiko Nishiki, Patrick L. Guthrie
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Patent number: 6478932Abstract: A combination process of vacuum sputtering and wet coating produces a high conductivity and light attenuation anti-reflection coating on a substrate of a CRT surface. The coating includes five layers by vacuum sputtering and one layer on top of the coating by conventional wet process. The layers produced by vacuum sputtering provides high anti-reflection, low resistivity, and light-attenuation effect. The layer produced by wet process provides fingerprint proof effect.Type: GrantFiled: June 21, 2001Date of Patent: November 12, 2002Assignee: Applied Vacuum Coating Technologies Co., Ltd.Inventors: Jau-Jier Chu, Jau-Sung Lee, Cheng-Chen Shih, Shao-Chi Chang
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Patent number: 6475354Abstract: This invention relates to a deposited film producing process that enables reduction of the time for adjusting the conditions for film formation, and brings about an improvement in the reproducibility of film thickness and film quality of the deposited film formed. This process comprises the steps of, in the state where a substrate is set in a film-forming chamber, introducing a sputtering gas containing no reactive gas into the film-forming chamber and causing discharge therein, adjusting the sensitivity of a device for monitoring emission intensity of plasma of the discharge, in such a way that the device reads a set value, and introducing at least a reactive gas into the film-forming chamber to deposit a film on the substrate by subjecting a target to sputtering while controlling the feed rate of the reactive gas in such way as to provide a constant deposition rate.Type: GrantFiled: July 8, 1998Date of Patent: November 5, 2002Assignee: Canon Kabushiki KaishaInventor: Noboru Toyama
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Publication number: 20020157703Abstract: In a process for forming on a substrate a transparent conductive film having crystallizability, the process comprises a first step of forming a film at a first film formation rate and a second step of forming a film at a second film formation rate, and the relationship between film formation rates in the respective steps satisfies:Type: ApplicationFiled: January 31, 2002Publication date: October 31, 2002Inventors: Akiya Nakayama, Hiroshi Echizen, Yasuyoshi Takai, Naoto Okada, Shigeo Kiso
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Publication number: 20020160236Abstract: There are provided:Type: ApplicationFiled: March 22, 2002Publication date: October 31, 2002Applicant: SUMITOMO CHEMICAL COMPANY, LIMITEDInventors: Takeshi Hattori, Kunio Saegusa, Yozo Shigesato
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Publication number: 20020153243Abstract: A multicolor organic light emitting device employs vertically stacked layers of double heterostructure devices which are fabricated from organic compounds. The vertical stacked structure is formed on a glass base having a transparent coating of ITO or similar metal to provide a substrate. Deposited on the substrate is the vertical stacked arrangement of three double heterostructure devices, each fabricated from a suitable organic material. Stacking is implemented such that the double heterostructure with the longest wavelength is on the top of the stack. This constitutes the device emitting red light on the top with the device having the shortest wavelength, namely, the device emitting blue light, on the bottom of the stack. Located between the red and blue device structures is the green device structure.Type: ApplicationFiled: December 21, 1999Publication date: October 24, 2002Inventors: STEPHEN R FORREST, MARK E THOMPSON, PAUL E BURROWS, VLADIMIR BULOVIC, GONG GU
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Patent number: 6468403Abstract: A method for producing a transparent conductive film composed mainly of an oxide by sputtering using a sputtering target capable of forming a transparent conductive film, wherein intermittent electric power is supplied to the target.Type: GrantFiled: July 28, 1994Date of Patent: October 22, 2002Assignee: Asahi Glass Company Ltd.Inventors: Junichi Shimizu, Shujiro Watanabe, Satoru Takaki, Hisashi Osaki, Takuji Oyama, Eiichi Ando
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Publication number: 20020144726Abstract: Provided is a method of forming a transparent, conductive film on a semiconductor layer formed on a substrate, by sputtering, wherein voltages are applied independently of each other to both a target and the substrate, respectively, and a bias voltage appearing in the substrate is controlled so as to form the transparent, conductive film on only a portion except for a defective region of the semiconductor layer, thereby restraining shunting of the transparent, conductive film and achieving excellent appearance thereof. Also provided are a defective region compensation method of a semiconductor layer, a photovoltaic element, and a method of producing the photovoltaic element.Type: ApplicationFiled: January 30, 2002Publication date: October 10, 2002Inventors: Toshihiro Yamashita, Yasuyoshi Takai, Hiroshi Izawa
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Publication number: 20020127353Abstract: A transparent electroconductive film has a polymer film, a primary layer formed on the polymer film, and a transparent electroconductive thin film or a multi-lamination film composed of at least one metal-compound layer and at least one electroconductive-metal layer, formed on the primary layer. The primary layer is made of silicon compound. The primary layer is formed by sputtering, using a target having a density of 2.9 g/cm3 or more.Type: ApplicationFiled: November 21, 2001Publication date: September 12, 2002Applicant: BRIDGESTONE CORPORATIONInventors: Masato Yoshikawa, Yoshinori Iwabuchi, Yukihiro Kusano, Mitsuhiro Nishida
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Publication number: 20020114901Abstract: Substantially transparent electrodes are formed upon a substrate by forming on the substrate, in order, a high index layer, a metallic conductive layer, and a conductive or semi-conductive top layer; and patterning the top layer and the conductive layer, preferably by laser ablation, to form a plurality of discrete electrodes from the metallic conductive layer. Conductors can be attached directly to the top layer, without requiring removal of this layer to expose the metallic conductive layer. The high index layer, conductive layer and top layer can all be formed by sputtering or similar processes which do not require high temperatures, so that plastic substrates can be used. The electrodes can be used, for example, in flat panel displays and in touch screen displays.Type: ApplicationFiled: September 17, 2001Publication date: August 22, 2002Inventors: Hyung-Chul Choi, Yi Zhi Chu, Linda S. Heath, William K. Smyth
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Patent number: 6425990Abstract: A method capable of fabricating a transparent conductive ITO film with a resistivity within a predetermined range until the end of the life of the target when transparent conductive ITO films are continuously formed on a plurality of substrates by continuous sputtering, and capable of fabricating a transparent conductive ITO film with a resistivity of within a predetermined range even when the film becomes thicker in forming it on a single substrate.Type: GrantFiled: July 28, 1995Date of Patent: July 30, 2002Assignee: Anelva CorporationInventor: Keizi Ishibashi
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Patent number: 6395149Abstract: The present invention provides a method of making electrically conductive light colored coated particles that are particularly useful for the manufacture of static dissipative compositions. The coated particles are useful for making static dissipative composites.Type: GrantFiled: June 30, 1998Date of Patent: May 28, 2002Assignee: 3M Innovative Properties CompanyInventor: Charlotte M. Palmgren
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Patent number: 6383345Abstract: A method for forming an indium tin oxide thin film on a substrate in the present invention includes the steps of introducing a mixture of an inert gas and a low electron affinity element in close proximity to a target as a primary sputter ion beam source, providing an oxygen gas between the target and the substrate, applying an electrical energy to the target to ionize the mixture, confining electrons generated in the ionization in close proximity to a surface of the target facing towards the substrate, disintegrating negatively charged ions from the target, and forming the indium tin oxide thin film on the substrate.Type: GrantFiled: December 22, 2000Date of Patent: May 7, 2002Assignee: Plasmion CorporationInventors: Steven Kim, Daeil Kim
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Patent number: 6379508Abstract: A method for forming a thin film of the present invention includes the steps of performing sequentially first idling discharge under application of a first level of discharge power upon gas introduction (period t1a), intermediate idling discharge under application of a second level of discharge power lower than the first level (period t1b), and second idling discharge at the first level of discharge power (period t1c), so that the pressure of sputtering gas and an intermediate product produced during the idling discharge are stabilized. The discharge power is lowered to the second level, the shutter is opened, and an ITO thin film, for example, is formed on a first substrate (t2). Thereafter, the same cycles are repeated to form ITO thin films on substrates.Type: GrantFiled: March 16, 1999Date of Patent: April 30, 2002Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Kazunori Kobayashi, Tomoaki Ishihara, Akira Nakamura, Toshihide Nobusada
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Patent number: 6379509Abstract: Substantially transparent electrodes are formed upon a substrate by forming on the substrate, in order, a high index layer, a metallic conductive layer, and a conductive or semi-conductive top layer; and patterning the top layer and the conductive layer, preferably by laser ablation, to form a plurality of discrete electrodes from the metallic conductive layer. Conductors can be attached directly to the top layer, without requiring removal of this layer to expose the metallic conductive layer. The high index layer, conductive layer and top layer can all be formed by sputtering or similar processes which do not require high temperatures, so that plastic substrates can be used. The electrodes can be used, for example, in flat panel displays and in touch screen displays.Type: GrantFiled: January 20, 1998Date of Patent: April 30, 2002Assignee: 3M Innovative Properties CompanyInventors: Hyung-Chul Choi, Yi Zhu Chu, Linda S. Heath, William K. Smyth