Abstract: A method and system are disclosed for plating objects. At least one aspect associated with the object plating is monitored to determine the amount of at least one byproduct created during the plating and/or the reduction in the amount of at least one plating component. Based on this monitored aspect, an adjustment is made to the flow rate of substances added to a plating cell and/or the flow rate of used plating substances drained from the plating cell. The used plating substances are purified to remove at least some of the byproduct and then the purified plating substances are combined with at least one component before passing back into the plating cell to reuse at least some of the plating substances. The method and system could be used during the plating of semiconductor wafers with copper.

Abstract: Disclosed is a method of analyzing organic components in an electroplating bath. Also disclosed is a method of controlling electroplating baths by monitoring the components of the plating bath in real-time.

Abstract: A method is provided that comprises forming a copper seed layer on a workpiece and measuring the uniformity of the copper seed layer on the workpiece. The method further comprises applying the uniformity measurement to modify processing to form a copper layer having a desired uniformity profile for increased planarization in subsequent planarizing.

Abstract: MEMS structures are provided that compensate for ambient temperature changes, process variations, and the like, and can be employed in many applications. These structures include an active microactuator adapted for thermal actuation to move in response to the active alteration of its temperature. The active microactuator may be further adapted to move in response to ambient temperature changes. These structures also include a temperature compensation element, such as a temperature compensation microactuator or frame, adapted to move in response to ambient temperature changes. The active microactuator and the temperature compensation element move cooperatively in response to ambient temperature changes. Thus, a predefined spatial relationship is maintained between the active microactuator and the associated temperature compensation microactuator over a broad range of ambient temperatures absent active alteration of the temperature of the active microactuator.

Abstract: A method of measuring a concentration of conductive species in an aqueous system is disclosed. In one embodiment, the method comprises providing an electrochemical cell wherein the electrochemical cell has a cell resistance that varies with a concentration of conductive species and determining a relationship between the cell resistance of the electrochemical cell and the concentration of conductive species. The method further comprises measuring one or more electrochemical parameters of the electrochemical cell and determining a test concentration of conductive species based upon the one or more measured electrochemical parameters. Also disclosed is a system for electroplating a material layer on a substrate.

Abstract: The invention relates to a method for combinatorially producing a library of materials by means of an electrochemical deposition in an array. The inventive library is made from an array of containers that consist of an electroconductive material, are open to the top and are electroconductively connected to a shared current supply device and is made from a corresponding array of auxiliary electrodes that are electroconductively connected to a shared current supply device and are arranged in such a way that an auxiliary electrode plunges into a container respectively or can be introduced therein without touching said container. The inventive method comprises the following steps: filling the containers with electrolytes having different compositions and containing electrolytically separable elements and applying an electric voltage between the current supply devices of the containers and auxiliary electrodes for obtaining an electrolytic deposition on the surfaces of the containers.

Abstract: A method and system are disclosed for plating objects. At least one aspect associated with the object plating is monitored to determine the amount of at least one byproduct created during the plating and/or the reduction in the amount of at least one plating component. Based on this monitored aspect, an adjustment is made to the flow rate of substances added to a plating cell and/or the flow rate of used plating substances drained from the plating cell. The used plating substances are purified to remove at least some of the byproduct and then the purified plating substances are combined with at least one component before passing back into the plating cell to reuse at least some of the plating substances. The method and system could be used during the plating of semiconductor wafers with copper.

Abstract: A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

Abstract: An electrochemical processing apparatus for processing a microelectronic workpiece includes a metrology unit and a control, signal-connected to the metrology unit. An electrochemical deposition unit provides a space to receive said microelectronic workpiece to deposit a subsequent film layer onto a prior layer, wherein a condition signal from the metrology unit influences the process control of the electrochemical deposition unit. The signal can also be used to transfer the microelectronic workpiece to a layer stripping unit, or a layer enhancement unit, or to a non-compliance station. The apparatus is particularly useful in measuring seed layer thickness and adjusting the operating control of a computational fluid dynamic reactor, which electroplates a process layer onto the seed layer.

Abstract: A plating analysis method is disclosed for electroplating in a system in which resistance of an anode and/or a cathode cannot be neglected. This method comprises giving a three-dimensional Laplace's equation, as a dominant equation, to a region containing a plating solution; discretizing the Laplace's equation by the boundary element method; giving a two-dimensional or three-dimensional Poisson's equation dealing with a flat surface or a curved surface, as a dominant equation, to a region within the anode and/or the cathode; discretizing the Poisson's equation by the boundary element method or the finite element method; and formulating a simultaneous equation of the discretized equations to calculate a current density distribution i and a potential distribution &phgr; in the system. The method can obtain the current density and potential distributions efficiently for a plating problem requiring consideration for the resistance of an electrode.

Abstract: A device for detecting an end point of electro-plating comprises a mandrel having a substrate and a patterned conductive layer with a main conductive area and an insulated conductive area on the substrate, an insulation region interposed between the main conductive area and the insulated conductive area, and a sensor electrically connected to the insulated conductive area for detecting a signal which indicates the end point of electro-plating.

Abstract: A method of controlling the content of a chemical bath includes the steps of: determining a replenishment condition for the chemical bath; defining a unit of the replenishment condition; establishing a pacing factor corresponding to a replenishment volume of a replenishment medium per unit of the replenishment condition; and defining a replenishment threshold corresponding to the product of a predetermined number of the defined units of the replenishment condition and the pacing factor. The rate of continued replenishment of the predetermined constituent of the chemical bath is determined in response to the replenishment condition, which may be elapsed time, ampere-hours (or coulombs), number of product loads, product surface area, or line speed over time. The method replenishes constituents as they actually are consumed. It also prevents depletion (or buildup in the case of decanting a by-product) and the associated time delay related to detection and correction.

Abstract: A method for determining relevant deposition parameters in i-PVD processes, includes, first calculating the reaction rates for desired reagents of the gas plasma and of a metal and/or metal compound to be deposited, then simulating the edge coverage of a predetermined structure with the deposited metal based upon the calculated reaction rates with systematic variation of the relevant deposition parameters, and compiling variant tables therefrom. By comparing an experimental verification of the simulated edge coverage by imaging the edge coverage of the metal layer deposited over the determined structure, e.g., using a TEM cross-section, with the simulated deposition parameters for the edge coverages that have been recorded in the variant table, it is possible to read the deposition parameters that are of relevance to the process from the variant table.

Abstract: The present invention concerns a method for the prevention of anode passivation in the electrolytic refining of copper, when periodic reversal current technology is used in electrolysis. The method is particularly suitable for the electrolytic refining of copper at high current densities. Irregular periodic reversal current technology is used in the present method, whereby current reversal is adjusted on the basis of an increase in electrolysis cell voltage.

Abstract: Disclosed are methods for analyzing additive breakdown products in electroplating baths as well as methods of controlling the presence of such breakdown products in electroplating baths.

Abstract: In order to regulate the metal ion concentration in an electrolyte fluid serving to electrolytically deposit metal and additionally containing substances of an electrochemically reversible redox system, it has been known in the art to conduct at least one portion of the electrolyte fluid through one auxiliary cell provided with one insoluble auxiliary anode and at least one auxiliary cathode, a current being conducted between them by applying a voltage. Accordingly, excess quantities of the oxidized substances of the redox system are reduced at the auxiliary cathode, the formation of ions of the metal to be deposited being reduced as a result thereof. Starting from this prior art, the present invention relates to using pieces of the metal to be deposited as an auxiliary cathode.

Abstract: An electroplating apparatus and method that can detect the film thickness of a plated film, which is being deposited on the surface, to be plated, of a substrate, consecutively in real time, thereby enabling the detection of the end point of plating. The electroplating apparatus for plating a substrate by filling a plating solution between the substrate held by a substrate holding portion and an anode, and applying a voltage between the substrate and the anode, includes at least one of a voltage monitor for monitoring the voltage applied between the substrate and the anode, thereby detecting the end point of the electroplating, and a current monitor for monitoring an electric current that flows through a detection circuit, which is formed by connecting at least two cathode electrodes and to which a constant voltage is applied, thereby detecting the end point of the electroplating.

Abstract: A single delivery channel is formed by, and between, inner wall 2 and baffle 3. Electrolyte 5 is pumped up the interior of channel 1 and is directed onto substrate 4 being a cathode maintained at −10 volts. The upper part of the inner wall 2 of channel 1 forms the anode such that electrote is forced between the substrate and the upper horizontal surface of the anode 6. A second baffle 7 is provided in order to assist in collecting and removing electrolyte 5 after impingement with substrate 4, possible for re-use. Contact between the electrolyte 5 and substrate 4 is optimised by providing the electrolyte with a swirling motion as it passes up channel 1. Anode 6 is a solid conducting bar 10, alternatively it is formed of solid rods 11 nor tubes 12.

Abstract: Textured surfaces comprised of peaks which have been electrochemically deposited on a substrate are prepared using a pulsed direct current process. Typical substrates are machine components such as a machine roll. Improved textured surfaces are made according to the invention by controlling the density, uniformity and size of the peaks using a pulsed direct current process. Accordingly, the peak characteristics are predetermined by selecting a pulse wave form having specific current density and pulse interval parameters as well as a total deposition time which will deposit peaks having desired characteristics on the substrate.

Abstract: A procedure and method for eliciting expert information on process capability and thereafter manipulating the elicited information in such a manner that it can effectively be used in a process capability database that is operating in a six sigma regime. The manipulation preferably includes converting the expert elicited information from a tolerance-type metric to a short term standard deviation (or sigma) metric, whereby the result of the manipulation is used to populate directly a process capability database and, as appropriate, thereby augment, replace or modulate the data already stored therein.

Abstract: The present invention provides methods and apparatus for analysis and monitoring of electrolyte bath composition. Based on analysis results, the invention controls electrolyte bath composition and plating hardware. Thus, the invention provides control of electroplating processes based on plating bath composition data. The invention accomplishes this by incorporating accurate bath component analysis data into a feedback control mechanism for electroplating. Bath electrolyte is treated and analyzed in a flow-through system in order to identify plating bath component concentrations and based on the results, the plating bath formulation and plating process are controlled.

Abstract: An electroplating system for plating at least one metal on at least one substrate. At least one plating tank contains a plating solution including the at least one metal to be plated on the at least one substrate. At least one anode is arranged in the at least one plating tank. The at least one anode is at least partially immersed within the plating solution during plating of the at least one metal. At least one cathode includes at least one workpiece portion in contact with the at least one substrate and at least one thief portion arranged in the vicinity of at least one portion of the at least one substrate for controlling plating of the at least one metal on the at least one portion of the at least one substrate. At least one power supply is connected to the at least one cathode. At least one controller separately controls a flow of power to the at least one workpiece portion of the cathode and the at least one thief portion of the cathode.

Abstract: A method and system are disclosed for plating objects. At least one aspect associated with the object plating is monitored to determine the amount of at least one byproduct created during the plating and/or the reduction in the amount of at least one plating component. Based on this monitored aspect, an adjustment is made to the flow rate of substances added to a plating cell and/or the flow rate of used plating substances drained from the plating cell. The used plating substances are purified to remove at least some of the byproduct and then the purified plating substances are combined with at least one component before passing back into the plating cell to reuse at least some of the plating substances. The method and system could be used during the plating of semiconductor wafers with copper.

Abstract: Disclosed is a method of analyzing components in an electroplating bath. Also disclosed is a method of controlling electroplating baths by monitoring the components of the plating bath in real-time.

Abstract: The present invention provides semiconductor workpiece position sensors and methods of monitoring the position of a semiconductor workpiece. One embodiment of the invention provides a method of monitoring position of a semiconductor workpiece including providing a process module including a process container having a process fluid therein and a workpiece holder configured to support the semiconductor workpiece, moving the semiconductor workpiece toward the process fluid within the process container, applying a reference signal to the process module, and indicating position of the semiconductor workpiece with respect to the process fluid responsive to the reference signal.

Abstract: Precise control of deposition or etching of thin films on a transparent substrate is particularly useful for electroformation of nozzles and formation control. A computer based measuring system is used to measure, in real time, a test feature such as one such nozzle. The rate of material deposition and removal is controlled based on the measured value of the test feature. In particular, a video camera and microscope are used to produce images of the test feature. During the electroplating process, metal is plated onto a conductive layer, and as the plated metal layer grows up from the conductive layer of the mandrel, the plated layer can also encroach on transparent openings produced by the absence of the mandrel conductive layer. The amount of encroachment on the transparent openings is directly related to the thickness of the plated layer.

Abstract: A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent confirm copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

Abstract: The present invention is directed to an improved electroplating method, chemistry, and apparatus for selectively depositing tin/lead solder bumps and other structures at a high deposition rate pursuant to manufacturing a microelectronic device from a workpiece, such as a semiconductor wafer. An apparatus for plating solder on a microelectronic workpiece in accordance with one aspect of the present invention comprises a reactor chamber containing an electroplating solution having free ions of tin and lead for plating onto the workpiece. A chemical delivery system is used to deliver the electroplating solution to the reactor chamber at a high flow rate. A workpiece support is used that includes a contact assembly for providing electroplating power to a surface at a side of the workpiece that is to be plated. The contact contacts the workpiece at a large plurality of discrete contact points that isolated from exposure to the electroplating solution.

Abstract: MEMS structures are provided that compensate for ambient temperature changes, process variations, and the like, and can be employed in many applications. These structures include an active microactuator adapted for thermal actuation to move in response to the active alteration of its temperature. The active microactuator may be further adapted to move in response to ambient temperature changes. These structures also include a temperature compensation element, such as a temperature compensation microactuator or frame, adapted to move in response to ambient temperature changes. The active microactuator and the temperature compensation element move cooperatively in response to ambient temperature changes. Thus, a predefined spatial relationship is maintained between the active microactuator and the associated temperature compensation microactuator over a broad range of ambient temperatures absent active alteration of the temperature of the active microactuator.

Abstract: A method of manufacturing a positive electrode foil of an aluminum electrolytic capacitor is provided in which anodizing conditions are optimally determined and automatically set to minimize the loss of production and to produce a constant quality of the positive electrode foil. The method comprises an etching process and an anodizing process. An etched foil produced in the etching process is subjected to a constant current inspection, and then, the anodizing conditions are determined from the result of the constant current inspection. The anodizing conditions are transferred to a control panel in the anodizing process where they are automatically registered as its settings. Also, an apparatus for manufacturing the positive electrode foil is provided which has a voltage sensor connected between an output running roller and cathode electrodes in an anodizing tank. A voltage measured by the voltage sensor is fed back to a direct-current source for controlling its output voltage.

Abstract: A plating system is composed of a transfer device for performing transfer of a wafer, a plating unit and a washing/drying unit provided around the transfer device. Each unit is structured to be detachable from the plating system. The plating unit is divided into a wafer transfer section and a plating section by a separator, and atmosphere of each section is independently set.

Abstract: The present invention provides a web conveying apparatus for conveying a web while holding the web and applying tension to the web, wherein the conveying apparatus has a plurality of rollers with which the web contacts to be conveyed, and at least one roller of the plurality of rollers has a mechanism for limiting deformation of the web within Y/E, and a web conveying method using a web conveying apparatus for conveying a web while holding the web and applying tension to the web, wherein the conveying apparatus has a plurality of rollers with which the web contacts to be conveyed, and the web is conveyed while the deformation of the web is limited within Y/E by a mechanism that is provided for at least one roller of the plurality of rollers. The apparatus and the method prevent meandering of the web.

Abstract: The invention relates to a method and an apparatus for producing an electrode coating. The fundamental idea of the invention is to regulate in a time-defined manner at any instant during an electrolytic deposition process the concentration of the electrolyte constituents and additives in that in the electrolytic bath are provided additional electrodes, through which specific electrolyte constituents and/or additives can be taken up and/or delivered in time-controlled manner.

Abstract: In a process for manufacturing an electrode for a PEM fuel cell or an electrochemical energy converter, an ion-exchange polymer is applied to one face of an electrode substrate. An electrocatalyst is then applied to the substrate by electrochemical deposition, preferably from a solution containing one or more complexes or salts of the electrocatalyst. The electrochemical deposition occurs by application of a voltage between a pair of electrodes, one of which is the electrode under preparation. The voltage between the two electrodes is controlled by controlling the potential of the working electrode. A pulsed voltage profile is applied across the two electrodes during the electrodeposition process.

Abstract: A semiconductor processing workpiece support which includes a detection subsystem that detects whether a wafer or other workpiece is present. The preferred arrangement uses an optical beam emitter and an optical beam detector mounted along the back side of a rotor which acts as a workpiece holder. The emitted beam passes through the workpiece holder and is reflected by any workpiece present in the Workpiece holder. The preferred units include both an optical emitter and pair of detectors. The detection is preferably able to discriminate on the basis of the angle of the reflected beam, so that a portion of the beam reflected by the workpiece holder is not considered or minimized.

Abstract: A substrate (155) is placed into a plating bath (19, 59), a current in the bath is measured, and a film (110) is plated onto the substrate (155). In one embodiment the current is measured using a sensing array (57) positioned within the bath, and the measurement is used to control a plating deposition parameter. In an alternative embodiment the current is measured using the sensing array (57) and a characteristic of the plated film is controlled using a corresponding control array (53) also positioned within the plating bath (59).

Abstract: The present invention provides an apparatus or a method for forming a thin zinc oxide film on a conductive base member by immersing the conductive base member and a counter electrode in an aqueous solution and supplying a current between the conductive base member and the counter electrode, in which (a) a distance between the counter electrode and the base member is 50 mm or more at an end portion of the counter electrode and is 3 mm to 40 mm at a central portion of the counter electrode, and (b) an end portion of the counter electrode is folded by an angle of −1° to −90° with respect to the conductive base member. Thus the thin zinc oxide film of satisfactory film quality can be formed on the conductive base member for a long time with a satisfactory yield, and inexpensive and stable production of the thin zinc oxide film can be realized.

Abstract: A method is described for electrodepositing an alloy of Ni-Fe-W-P. The alloy has good corrosion and wear resistance and hence is a possible replacement for hard chromium. The electrodeposition solution contains nickel ions, iron ions, tungsten ions and phosphorous ions, and a reducing agent. The solution yields high iron content, bright level alloy deposits containing up to 40 percent iron. In another aspect of the invention, electrodeposition is carried out on a surface containing a geometric error. A sensor determines the surface topography of the surface. This is compared in a microprocessor to the desired topography. A corrective signal is sent to an electric current source to cause electrodeposition of a quantity of leveling agent sufficient to at least partially correct the geometric error.

Abstract: An electroplating process for preparing a monolith metal layer over a polycrystalline base metal and the plated monolith product. A monolith layer has a variable thickness of one crystal. The process is typically carried in molten salts electrolytes, such as the halide salts under an inert atmosphere at an elevated temperature, and over deposition time periods and film thickness sufficient to sinter and recrystallize completely the nucleating metal particles into one single crystal or crystals having very large grains. In the process, a close-packed film of submicron particle (20) is formed on a suitable substrate at an elevated temperature. The temperature has the significance of annealing particles as they are formed, and substrates on which the particles can populate are desirable. As the packed bed thickens, the submicron particles develop necks (21) and as they merge into each other shrinkage (22) occurs.

Abstract: Recovery of silver from a photographic fixer solution in an electrolytic cell is controlled so as to maintain a high current efficiency whilst minimizing unwanted side effects. The rate of change of plating voltage at constant current through the cell is monitored, and in response to detection of a maximum value thereof the current is reduced to a new constant level. Such control allows the cell to be operated continually at high current efficiency in response to changing chemical conditions within the cell.

Abstract: A system and method is provided for electrolytic pickling a metal strip, where the electric current is conducted through the strip indirectly without electrically conductive contact between the strip and the electrodes. The strip is run vertically or substantially vertically through the process, and the electrolyte liquid is fed in between the strip and the electrodes.

Abstract: A method and a system are provided for plating workpieces as part of an "on-track" in-line or a radially arranged manufacturing system, including "on-site" measurement of at least one plating characteristic for computer controlled process regulation and quality control. Movement of workpieces between various stations is controlled in response to a comparison of the measured value(s) of the plating characteristic(s) and (a) target value(s) or target range(s) of values.

Abstract: The invention relates to a method for maintaining constant concentrations of substances contained in an electrolytic treatment bath, preferably in baths with aqueous solutions. In order to regenerate the continual depletion of chemicals, substance concentrates are added to the baths according to known methods. The rapid increase in concentrations of damaging substances in the processing solution is disadvantageous. In order to reduce this build-up, a further metering method is known, namely the continuous replacement of bath solution by creating a bath overflow. The addition of bath solution with the bath concentration is balanced out by the overflow. As a consequence of evaporation and entrainment this method also leads to the fact that the operating concentration cannot be maintained for a long period of time in chemically critical baths.

Abstract: A method and circuit (14) for monitoring an electroplating operation of an electroplating machine (10) of the type having a first electroplating cell (18) for depositing nickel onto an integrated circuit leadframe (12) and a second electroplating cell (19) for subsequently depositing palladium onto the leadframe (12). A first current (30) is applied in the first electroplating cell (18) to form a nickel deposit on the leadframe (12) and a second current (31) is applied in the second electroplating cell (19) to from a palladium deposit on the nickel deposit. The second current (31) is greater than the first current (30) if the electroplating machine (10) is operating normally. The first current (30) and second current (31) are compared in a comparator (44) during the electroplating operation, and if the second current (31) is less than the first current (30), an error signal is generated on an output line (50). If desired, the electroplating machine (10) may be stopped in response to the error signal.

Abstract: A semiconductor processing workpiece support which includes a detection subsystem that detects whether a wafer or other workpiece is present. The preferred arrangement uses an optical beam emitter and an optical beam detector mounted along the back side of a rotor which acts as a workpiece holder. The emitted beam passes through the workpiece holder and is reflected by any workpiece present in the workpiece holder. The preferred units include both an optical emitter and pair of detectors. The detection is preferably able to discriminate on the basis of the angle of the reflected beam, so that a portion of the beam reflected by the workpiece holder is not considered or minimized.

Abstract: A film of nickel oxide is anodically deposited on a graphite sheet held in osition on an electrochemical cell during application of a positive electrode voltage to the graphite sheet while exposed to an electrolytic nickel oxide solution within a volumetrically variable chamber of the cell. An angularly orientated x-ray beam is admitted into the cell for transmission through the deposited nickel oxide film in order to obtain structural information while the film is subject to electrochemical and in-situ x-ray spectroscopy from which optimum film thickness, may be determined by comparative analysis for capacitor fabrication purposes.

Abstract: The invention relates to a method and device for electroplating plate-shaped product, particularly printed circuit boards, in horizontal continuous plants with optional sequence of product, revolving contacting means serving for electrical connection of a source of bath current via wiper rails with the product, and the beginning and end of each individual product item at the inlet to the electroplating plant, and the transport speed of the product, being detected with the aid of sensors, said sensors sending sensor signals to a control system which ascertains whether a product item is present at the gripping point of the contacting means or not, the contacting means being connected electrically and in the electroplating sense in a low-resistance manner to the sources of bath current only when product is present in the region of contacts of the contacting means.

Abstract: A zinc-containing waste article is recycled by a method in which the zinc of the waste article is recovered in a molten state while the unmolten nickel/copper electroplating layer of the waste article is dissolved in an acidic solution to form a nickel-zinc alloy or a nickel-zinc-copper alloy electroplating solution.

Abstract: The present invention provides a method of controlling a component concentration of a plating solution in continuously electroplating a metallic strip while controlling a metal ion concentration of the plating solution. In the control method, when a total amount of the plating solution flowing in the series of devices varies from a preselected target value of the total bath amount, a feedback control target value of the metal ion concentration is controlled by changing it to a corrected target value of the metal ion concentration computed on the basis of a preselected target value of the metal ion concentration and said variation in the total amount of the plating solution so that the acid concentration or pH of the plating solution is kept constant. This method is capable of continuously electroplating a metallic strip with high efficiency and high precision.

Abstract: A method and an apparatus for thermal process control in electroforming stampers for the production of CD/LD data carriers or the like. The temperature of an electrolytic solution in an electroforming cell is maintained at a value nearest a specific maximum temperature by raising or lowering the temperature of the electrolytic solution in a storage tank provided outside of the electroforming cell as a function of the temperature measured in a cathode space of the electroforming cell. A temperature sensor is disposed in or near the cathode space adjacent an electrolyte injection nozzle in a space between the anode and cathode means for supplying signals to a control unit. The temperature sensor and the injection nozzle are preferably assembled into a single mounting unit. The electroforming process can thus be run with an optimum effectivity in the vicinity of a maximum permissible temperature of the electrolytic solution.