Abstract: A non-oriented electrical steel sheet according to an embodiment of the present invention is a non-oriented electrical steel sheet including a base metal steel sheet and a composite coating film that is formed on surfaces of the base metal steel sheet and includes Zn-containing phosphate and an organic resin, wherein the non-oriented electrical steel sheet contains crystalline aluminum phosphate showing diffraction lines belonging to ICDD No. 01-074-3256 when the composite coating film is measured by a wide-angle X-ray diffraction method.

Abstract: The present disclosure relates to an electroplating system including a first contact detection sensor and a second contact detection sensor disposed at a surface of a cone of the electroplating system. The first contact detection sensor detects a first resistance at a first contact between a substrate to be plated by the electroplating system and a first contact pin, the second contact detection sensor detects a second resistance at a second contact between the substrate and a second contact pin. A controller receives the first resistance and the second resistance, and determines the first contact and the second contact are not properly formed when a difference between the first resistance and the second resistance is not within a first predetermined resistance range, or the first resistance or the second resistance is not within a second predetermined resistance range.

Abstract: In a plating apparatus, a short circuit of a wiring between a rectifier and a plating device is detected without using a substrate in vain. In the plating apparatus that supplies a current from the rectifier to the substrate to plate the substrate, a short circuit detection method includes a step of outputting a current with a predetermined current value from the rectifier, in a state where the substrate and a substrate holder holding the substrate are not electrically connected to the rectifier, a step of acquiring an output voltage value of the rectifier, a step of comparing the output voltage value with a predetermined reference voltage value, and a step of determining that a short circuit occurs in a circuit for connecting the rectifier and the substrate, in a case where the output voltage value is lower than the reference voltage value.

Abstract: Fabricating an electrode for capacitor includes performing a first set of one or more preliminary oxide formation operations on a sheet of material. The method also includes performing a capacitance test on the sheet of material so as to determine the capacitance of the sheet of material after the one or more preliminary oxide formation operations. The method proceeds on a first path in response to a first result of the capacitance test and on a second path in response to a second result of the capacitance test. The first path includes performing a second set of the one or more preliminary oxide formation operations on the sheet of material so as to reduce the capacitance of the sheet of material below the determined capacitance. The second path excludes performing any preliminary oxide formation operations on the sheet of material.

Abstract: Disclosed is an electrochemical method for continuous regeneration of a PtIV oxidant to furnish overall electrochemical methane oxidation. Cl-adsorbed Pt electrodes catalyze facile oxidation of PtII to PtIV without concomitant methanol oxidation. Exploiting this electrochemistry, the PtII/IV ratio in solution is maintained via in situ monitoring of the solution potential coupled with dynamic modulation of the electric current. Remarkably, this method leads to sustained methane oxidation catalysis with ˜70% selectivity for methanol.

Abstract: An apparatus for alkaline water electrolysis including: an electrolysis vessel; first and second gas-liquid separators respectively separating electrolytes and oxygen/hydrogen gas flowing out from anode/cathode chambers; first and second electrolyte tanks respectively storing the electrolytes separated by the first/second gas-liquid separators; oxygen and hydrogen gas feed pipes respectively introducing the separated oxygen/hydrogen gas into gas phase parts of the first/second electrolyte tanks; oxygen and hydrogen gas exhaust pipes respectively allowing oxygen/hydrogen gas to flow out from the gas phase parts of the first/second electrolyte tanks therethrough; and a circulator supplying the electrolytes from the first and second electrolyte tanks to the electrolysis vessel.

Abstract: Provided herein are methods and apparatus for determining leveler concentration in an electroplating solution. The approach allows the concentration of leveler to be detected and measured, even at very low leveler concentrations. According to the various embodiments, the methods involve providing an electrode with a metal surface, exposing the electrode to a pre-acceleration solution with at least one accelerator, allowing the surface of the electrode to become saturated with accelerator, measuring an electrochemical response while plating the electrode in a solution, and determining the concentration of leveler in the solution by comparing the measured electrochemical response to a model relating leveler concentration to known electrochemical responses. According to other embodiments, the apparatus includes an electrode, a measuring apparatus or an electrochemical cell configured to measure an electrochemical response, and a controller designed to carry out the method outlined above.

Abstract: Provided are an apparatus for and a method of processing a substrate. The substrate processing apparatus includes a substrate processing unit to process a substrate using a processing solution containing a mixture of first and second sources; a source supplying part to supply the first and second sources to the substrate processing unit; at least one analyzer to measure a concentration of the second source in the processing solution or a pH value of the processing solution and adjust a measurement reference value of the second source in the processing solution using a standard solution, in which the first and second sources are mixed to have a predetermined concentration or pH value; and a standard solution supplying part to prepare the standard solution using the first and second sources to be supplied from the source supplying part and to supply the standard solution to the at least one analyzer.

Abstract: The temperature of a chemical liquid supplied to a pot is detected while allowing a processing liquid discharge port to discharge the chemical liquid toward the pot at a pre-dispensing position. The temperature of the chemical liquid rises in response to the lapse of time. When the temperature of the chemical liquid supplied to the pot reaches a second target temperature, the processing liquid discharge port is allowed to stop the discharge of the chemical liquid. Thereafter, a positional relationship between the processing liquid discharge port and the pot is changed, and the processing liquid discharge port is allowed to discharge the chemical liquid toward the substrate at the processing position.

Abstract: An electro-processing apparatus has a contact ring including a seal which is able to compensate for electric field distortions created by a notch (or other irregularity) on the wafer or work piece. The shape of the contact ring at the notch is changed, to reduce current crowding at the notch. The change in shape changes the resistance of the current path between a thief electrode and the wafer edge to increase thief electrode current drawn from the region of the notch. As a result, the wafer is plated with a film having more uniform thickness.

Abstract: Prior to electrodeposition of copper onto a nickel-containing or a cobalt-containing seed layer, a semiconductor wafer is pretreated by contacting the seed layer with a pre-wetting liquid comprising cupric ions at a concentration of at least about 10 g/L, more preferably of at least about 30 g/L, and an electroplating suppressor, such as a compound from the class of polyalkylene glycols. This pre-treatment is particularly useful for wafers having one or more large recessed features, such as through silicon vias (TSVs). The pre-wetting liquid is preferably degassed prior to contact with the wafer substrate. The pretreatment is preferably performed under subatmospheric pressure to prevent bubble formation within the recessed features. After the wafer is pretreated, copper is electrodeposited from an electroplating solution (such as an acidic electroplating solution) to fill the recessed features on the wafer.

Abstract: To provide a flexible substrate processing apparatus which allows the stable reduction of an oxide contained in a film-like structure body formed on a flexible substrate. The apparatus has a substrate carrying-out portion where a flexible substrate on which a film-like structure body is formed is unwound; a reduction treatment portion where an oxide contained in the film-like structure body formed on the flexible substrate is electrochemically reduced; a washing portion where the flexible substrate and the film-like structure body are washed; a drying portion where the flexible substrate and the film-like structure body are dried; and a substrate carrying-in portion where the flexible substrate on which the film-like structure body is formed is taken up.

Abstract: A plating apparatus includes a plating bath, an insoluble anode located in the plating bath, a plating electric power supply being capable of applying a voltage between the insoluble anode and the member to be plated, an anode-displacement mechanism being capable of moving the insoluble anode in the plating bath and of holding the insoluble anode at a predetermined position in the plating bath, and a controller having an anode-position controller being capable of generating a control signal for controlling an action of the anode-displacement mechanism and of outputting the control signal to the anode-displacement mechanism.

Abstract: A dynamic formation protocol for a lithium-ion battery cell. An “SEI formation end voltage” is identified, which is the voltage reached during formation at which the SEI layer is substantially formed. Charge rates are selected for the formation, with a first charge current rate to be used until the SEI formation end voltage is reached, and a second charge current rate, faster than the first charge current rate, to be used thereafter the SEI formation end voltage. These charge rates are applied to the cell for at least a first cycle of the dynamic formation process.

Abstract: Disclosed herein are electroplating systems for electroplating nickel onto a semiconductor substrate having an electroplating cell for holding an electrolyte solution during electroplating which includes a cathode chamber and an anode chamber configured to hold a nickel anode, and having an oxygen removal device arranged to reduce oxygen concentration in the electrolyte solution as it is flowed to the anode chamber during electroplating and during idle times when the system is not electroplating. Also disclosed herein are methods of electroplating nickel onto a substrate in an electroplating cell having anode and cathode chambers, which include reducing the oxygen concentration in an electrolyte solution, flowing the electrolyte solution into the anode chamber and contacting a nickel anode therein, and electroplating nickel from the electrolyte solution onto a substrate in the cathode chamber, wherein the electrolyte solution in the cathode chamber is maintained at a pH of between about 3.5 and 4.5.

Abstract: A method and system are disclosed for controlling plating bath compositions. Speciation analyzers including HPLC and mass spectrometry are employed to separate, detect, identify, and quantify additives and degradation products. A control unit is linked to a plating bath interface, analyzer interface, and valves to control the flow of plating bath to an analyzer sampler and back to plating bath. For each degradation product, a response output is determined for at least one performance factor in terms of an additive equivalent amount that produces the same effect. A data processing unit receives concentration data for additives and degradation products from speciation analyzers and calculates an amount of each additive needed to replenish a used bath. As a result, the bleed-and-feed ratio for maintaining plating baths can be substantially reduced with significant productivity improvement and cost savings in terms of chemicals, chemical disposal, less down time and improved product quality.

Abstract: An Sn alloy plating apparatus includes: a plating bath having a cathode chamber for holding therein an Sn alloy plating solution in which the substrate is to be immersed and an anode chamber for holding therein an anolyte containing Sn ions and an acid; an Sn anode located in the anode chamber; and an electrolytic solution supply line configured to supply an electrolytic solution containing the acid into the anode chamber such that a Sn ion concentration of the anolyte in the anode chamber is kept not less than a predetermined value and a concentration of the acid in the anolyte is kept not less than a predetermined acceptable value. The electrolytic solution supply line supplies the electrolytic solution into the anode chamber to increase an amount of the anolyte in the anode chamber and supply the anolyte into the Sn alloy plating solution by the increased amount.

Abstract: It is an object of the present invention to derive the optimum operating condition parameters for plating operation accurately and efficiently. At first, a preliminary test operation is carried out under the energized condition (S12), then in light of such result, a sequential operations such as a first test operation (step S14) in which no energization is carried out for plurality of operating pattern candidates and a second test operation (step S16) under the energized condition are carried out, and then the optimum operating conditions are registered (step S18).

Abstract: The invention relates to a system and a method of plating metal alloys, as well as to the structures thus obtained. The system for plating metal alloys comprises an electrolytic cell containing an electrolytic solution (3) in which an anode (4,4a,4b), a cathode (5), and a plurality of metal components to be plated onto the cathode are immersed, the anode (4,4a,4b) and the cathode (5) being electrically connected to means (6) adapted to apply a potential difference between said anode (4,4a,4b) and said cathode (5). The invention is characterized in that the means (6) adapted to apply a potential difference between said cathode (5) and said anode (4,4a,4b) impose a potential difference value that changes over time according to a predefined law.

Abstract: A system for electroplating a substrate includes one or more controllers, with each controller having an FPGA with one or more output channels. A bulk power supply is connected to each controller. One or more transistors are associated with each output channel. An electroplating chamber has one or more electrodes, with each electrode connected to at least one output channel. The system may include a waveform capture and viewing circuit providing built-in process verification and diagnostic tools. The system may also have a throttle back mode which attempts to maintain proper anode current ratios by reducing setpoints of all anodes by the same percentage, if a fault condition causes a reduction in current to one of the anodes. Blackbox logging may also optionally be used for recording selected data values into a circular buffer having a selected amount of memory.

Abstract: The present invention relates to CIGS solar cell fabrication. The invention discloses a method for fabricating CIGS thin film solar cells using a roll-to-roll apparatus. The invention discloses method to fabricate semiconductor thin film Cu(InGa)(SeS)2 by sequentially electroplating a stack of multiple precursor layers comprising of copper, indium, gallium, and selenium elements or their alloys followed by selenization at a temperature between 450° C. and 700° C.

Abstract: An objective of this invention is to reliably form a plating film. The following two steps are sequentially conducted: a first step of connecting a film-formation surface of a wafer 109 to a cathode electrode 107, making the film-formation surface inclined from the surface of a plating solution 103 and immersing the wafer 109 into the plating solution 103 with applying a first current between the cathode electrode 107 and an Cu anode electrode 105 disposed in the plating solution 103, and second step of, after immersing the film-formation surface in the plating solution 103, applying a second current between the cathode electrode 107 and the Cu anode electrode 105 to form a metal film on the film-formation surface by electrolytic plating. In the first step, the first current is controlled on the basis of an inclination angle between the liquid surface and the film-formation surface.

Abstract: A manufacturing method of a support for a planographic printing plate including at least an alkaline etching step of dissolving an aluminum surface layer of an aluminum web with an alkaline solution during a surface roughening treatment on a surface of the aluminum web continuously traveling, the manufacturing method comprising: a circulating step of cyclically using the alkaline solution between a treatment tank for the etching and an alkaline solution reservoir during adjusting composition concentration of the alkaline solution; and a filtering step of filtering the alkaline solution cyclically used so as to remove solid matter in the alkaline solution.

Abstract: Systems and methods for electrodepositing a nickel-cobalt alloy using a rotating cylinder electrode assembly with a plating surface and an electrical contact. The assembly is placed within a plating bath and rotated while running a plating cycle. Nickel-cobalt alloy deposition is selectively controlled by controlling current density distribution and/or cobalt content in the plating bath while running the plating cycle to deposit an alloy of a desired yield strength onto the plating surface in a single plating cycle. In various embodiments, the rotating cylinder may be used as an insitu monitoring method to assist in obtaining the properties desired.

Abstract: The present invention provides a system and a method for metal deposition in semiconductor processing, the system comprising a plating tool with one or more plating tanks, each containing one of a respective electrolyte solution, one or more replenishment sections each fluidly connected to a respective one of the one or more plating tanks, one or more draining sections each fluidly connected to a respective one of the one or more plating tanks, and a control system adapted to operate the one or more replenishing sections and/or the one or more draining sections so as to maintain a condition of the electrolyte solutions.

Abstract: System, method and apparatus for measuring electrolysis cell operating conditions and communicating the same are disclosed. The system includes a selectively positionable member coupled to an analytical apparatus, wherein the selectively positionable is configured to move the analytical apparatus into and out of physical communication with a bath. The system may also include a crust breaker for breaking the surface of a bath and an electronic device for measuring bath level.

Abstract: Versatile methods of refining a first and a second layer of a workpiece are discussed. New refining methods and refining apparatus are disclosed. The new refining methods can help improve yield and appreciably change the cost of manufacture for refining of workpieces. The methods can be applied to workpieces having extremely close tolerances such as semiconductor wafers. New methods of control are also discussed. Methods use controllers, processors, computers, and processor readable memory devices are discussed. Use of stored information is to make changes in process control are discussed. Use of process models are discussed for refining. Determining a changed process control with stored information from first and second layers of a workpiece is disclosed. A changed process control can make an appreciable changes to the cost of manufacture of a workpiece.

Abstract: Disclosed are embodiments of an electroplating system and an associated electroplating method that allow for depositing of metal alloys with a uniform plate thickness and with the means to alter dynamically the alloy composition. Specifically, by using multiple anodes, each with different types of soluble metals, the system and method avoid the need for periodic plating bath replacement and also allow the ratio of metals within the deposited alloy to be selectively varied by applying different voltages to the different metals. The system and method further avoids the uneven current density and potential distribution and, thus, the non-uniform plating thicknesses exhibited by prior art methods by selectively varying the shape and placement of the anodes within the plating bath. Additionally, the system and method allows for fine tuning of the plating thickness by using electrically insulating selectively placed prescribed baffles.

Abstract: A method of automatic deposition profile targeting for electrochemically depositing copper with a position-dependent controllable plating tool including the steps of depositing copper on a patterned product wafer, measuring an actual thickness profile of the deposited copper and generating respective measurement data, feeding the measurement data to an advanced process control (APC) model and calculating individual corrections for plating parameters in the position-dependent controllable plating tool.

Abstract: A continuous micro anode guided electroplating device and a method thereof are revealed. By real-time image monitoring and capillary action of the micro/nanoscale tube, a three-dimensional microstructure is deposited on a workpiece at the cathode. The deposit is growing smoothly under the real-time image monitoring. Moreover, the workpiece is not immersed in an electrolyte so that contaminations of the workpiece caused by electrolyte are reduced.

Abstract: The invention relates to a method for producing a switch element. The invention is characterized in that the switch element comprises three electrodes that are located in an electrolyte, two of which (source electrode and drain electrode) are interconnected by a bridge consisting of one or more atoms that can be reversibly opened and closed. The opening and closing of said contact between the source and drain electrodes can be controlled by the potential that is applied to the third electrode (gate electrode). The switch element is produced by the repeated application of potential cycles between the gate electrode and the source or drain electrode. The potential is increased and reduced during the potential cycles until the conductance between the source and drain electrode can be switched back and forth between two conductances, as a result of said change in potential in the gate electrode, as a reproducible function of the voltage of the gate electrode.

Abstract: Embodiments described herein generally relate to methods and apparatus for forming an electrode structure used in an energy storage device. More particularly, embodiments described herein relate to methods and apparatus for characterizing nanomaterials used in forming high capacity electrode structures for energy storage devices. In one embodiment a process for forming an electrode structure for an energy storage device is provided. The process comprises depositing a columnar metal structure over a substrate at a first current density by a diffusion limited deposition process, measuring a capacitance of the columnar metal structure to determine a surface area of the columnar metal structure, and depositing three dimensional porous metal structures over the columnar metal structure at a second current density greater than the first current density.

Abstract: The present disclosure generally addresses the problem of controlling a plating profile in multi-step recipes and addresses, in particular, the problem of compensating for variations of the plating tool state to stabilize the plating results. The compensation is done by adjustments of corrections factors for currents of a plating tool in a multi-anode configuration. The described method enables control of recipes with different current ratios in each recipe step and models different deposition sensitivities in each recipe step. Generally, the method of the present disclosure requires a measurement step, where the tool state is determined, and a data processing step, where the correction factors are set based on models describing the plating process and the tool state.

Abstract: A method for manufacturing a negative electrode for a non-aqueous electrolyte secondary battery is provided. A negative electrode precursor of the non-aqueous electrolyte secondary battery is allowed to absorb lithium ions, the negative electrode precursor includes a current collector and an active material layer formed on the current collector. The precursor is provided with an exposed portion of the current collector. In this method, a negative electrode active material layer is allowed to absorb lithium ions by electrolysis in the non-aqueous electrolyte solution. At this time, by measuring a potential of a portion immersed in the non-aqueous electrolyte solution, the exposed portion is detected and an electric current of the electrolysis is controlled. Thereby, the deposition of lithium metal on the exposed portion is suppressed.

Abstract: A method of fabricating a semiconductor device of the invention includes a plating process of filling a plurality of recesses provided to an insulating film formed on a substrate with an electro-conductive material, wherein the plating process includes a process step (S104) of performing the plating with a first current density which was obtained by correcting a predetermined first reference current density based on ratio of surface area Sr=S1/S2 of a first surface area S1 over the entire surface of the substrate which includes the area of side walls of the plurality of recesses over the entire surface of the semiconductor substrate, and a second surface area S2 over the entire surface of the substrate which does not include the area of side walls of the plurality of recesses, when fine recesses not larger than a predetermined width, out of all of the plurality of recesses, are filled with the electro-conductive material.

Abstract: Device and method suitable for the electrochemical processing of an object. The device is provided at least with a chamber for accommodating an electrolyte, means for supporting the object to be processed in this chamber, electrodes arranged in this chamber, and control means for applying an electric current between the object to be processed and the electrodes.

Abstract: A method and apparatus are described that use cell voltage and/or current as monitor to prevent electrochemical deposition (e.g., electroplating) tools from deplating wafers with no or poor metal (e.g., Cu) seed coverage.

Abstract: A method and system are disclosed for controlling plating bath compositions. Speciation analyzers including HPLC and mass spectrometry are employed to separate, detect, identify, and quantify additives and degradation products. A control unit is linked to a plating bath interface, analyzer interface, and valves to control the flow of plating bath to an analyzer sampler and back to plating bath. For each degradation product, a response output is determined for at least one performance factor in terms of an additive equivalent amount that produces the same effect. A data processing unit receives concentration data for additives and degradation products from speciation analyzers and calculates an amount of each additive needed to replenish a used bath. As a result, the bleed-and-feed ratio for maintaining plating baths can be substantially reduced with significant productivity improvement and cost savings in terms of chemicals, chemical disposal, less down time and improved product quality.

Abstract: A method is provided for electrochemically depositing a polysaccharide mass having a selected physical state. According to an embodiment, an electrically conductive support of a substrate is contacted with an aqueous solution including a selectively insolubilizable polysaccharide, and the selectively insolubilizable polysaccharide is electrochemically deposited on the electrically conductive support while controlling deposition conditions to form the polysaccharide mass having the selected physical state, such as that of a hydrogel. Deposition may be performed in a spatially and/or temporally controlled manner.

Abstract: A method of manufacturing a semiconductor device includes measuring the reflectance at the surface of a semiconductor substrate provided with concave portions and deciding a deposition parameter that represents a deposition condition corresponding to the measured reflectance. Then, a metal film is formed on the semiconductor substrate under a condition corresponding to the deposition parameter.

Abstract: A method and apparatus for measuring differential voltages in an electrolyte of an electrochemical plating cell. Current densities are calculated from the measured differential voltages and correlated to thickness values of plated materials. A real time thickness profile may be generated from the thickness values.

Abstract: An electroplating system is provided. The system comprises a reaction tank, a tube, and a video bubble detector. The reaction tank, having a first diameter, contains a plating solution. The tube, connecting to the reaction tank, comprises an inflow tube and a branch, wherein the inflow tube inputs the plating solution into the reaction tank, and the branch has an enlarged part having the first diameter. The video bubble detector, mounted on the enlarged part of the branch, detects the presence of a bubble in the plating solution flowing through the branch.

Abstract: The present invention relates to a process for manufacturing a brightness enhancement structure comprising micro-reflectors. The process comprises forming an array of micro-structures by embossing; and depositing a metal layer over the surface of the micro-structures. The present invention also relates to a process for manufacturing a display device comprising micro-reflectors. The present invention further relates to a display device comprising micro-reflectors.

Abstract: System, method and apparatus for measuring electrolysis cell operating conditions and communicating the same are disclosed. The system includes a selectively positionable member coupled to an analytical apparatus, wherein the selectively positionable is configured to move the analytical apparatus into and out of physical communication with a bath. The system may also include a crust breaker for breaking the surface of a bath and an electronic device for measuring bath level.

Abstract: A volume-porous electrode is provided which increases effectiveness and production of electrochemical processes. The electrode is formed of a carbon, graphitic cotton wool, or from carbon composites configured to permit fluid flow through a volume of the electrode in three orthogonal directions. The electrode conducts an electrical charge directly from a power source, and also includes a conductive band connected to a surface of the electrode volume, whereby a high charge density is applied uniformly across the electrode volume. Apparatus and methods which employ the volume-porous electrode are disclosed for removal of metals from liquid solutions using electroextraction and electro-coagulation techniques, and for electrochemical modification of the pH level of a liquid.

Abstract: A method of forming an insulator that passes through a metal substrate (302) comprising: anodizing a region (312a, 312b, 314,316a, 316b, 318, 320a, 320b, 322, 324a, 324b) of the substrate to form the insulator; illuminating the region with light (330); and determining if the light passes through the substrate at the region to determine if the insulator passes completely through the substrate.

Abstract: The invention relates to a method for deposition of chromium layers as hard-chrome plating for protection against wear or corrosion and/or for decorative purposes and also an electroplating bath with which chromium layers of this type can be deposited. The invention also relates to hard-chrome surfaces produced accordingly.

Abstract: Electrochemical fabrication processes and apparatus for producing multi-layer structures include operations or means for providing enhanced monitoring of build operations or detection of the results of build operations, operations or means for build problem recognition, operations or means for evaluation of corrective action options, operations or means for making corrective action decisions, and operations or means for executing actions based on those decisions.

Abstract: Method and system for making a product (1) having a solid body (2) and having one or more cavities (3, 15) inside that solid body, with a broad surface and a small thickness. A liquid material is provided within a mould (4), and solidification of the liquid material is controlled in a position dependent way from the outside of the product. When using a thermoplastic material, the system may cool said liquid material less in areas that are projections of the cavities on the outside of the product on its broad surface. When using a thermosetting material the system may include means (5, 9) for controlled heating the liquid material, excluding the projections of the intended cavities. Once part of the product has sufficiently solidified outside the intended cavities the liquid material is driven from the intended cavities by means of a fluid. In the product some cavities may be provided with a conductive layer or structure, e.g.

Abstract: It is an object of the present invention to derive the optimum operating condition parameters for plating operation accurately and efficiently. At first, a preliminary test operation is carried out under the energized condition (S12), then in light of such result, a sequential operations such as a first test operation (step S14) in which no energization is carried out for plurality of operating pattern candidates and a second test operation (step S16) under the energized condition are carried out, and then the optimum operating conditions are registered (step S18).