Abstract: A semiconductor device production method of the present invention first collects data including an initial volume of plating solution, volume of replenished solution, number of wafers processed, value of current applied and volume of waste solution in a step of filling a metal plating film in a via hole or a trench formed in an insulating film on a semiconductor substrate. Then, a cumulative charge during the plating is calculated based on the obtained current value. Also, a total volume of plating solution is calculated. Furthermore, an amount of decomposition products of suppressors contained in the plating solution based on the calculated total volume of plating solution, the volume of waste solution and the calculated cumulative charge. The semiconductor substrate is plated only when the amount of decomposition products is equal to or smaller than a predetermined threshold.

Abstract: Method of forming a multilayer structure by electroetching or electroplating on a substrate. A seed layer is arranged on the substrate and a master electrode is applied thereto. The master electrode has a pattern layer forming multiple electrochemical cells with the substrate. A voltage is applied for etching the seed layer or applying a plating material to the seed layer. A dielectric material (9) is arranged between the structures (8) thus formed. The dielectric layer is planarized for uncovering the structure below and another structure layer is formed on top of the first. Alternatively, the dielectric layer is applied with a thickness two layers and the structure below is accessed by selective etching of the dielectric layer for selectively uncovering the top surface of the structure below. Multiple structure layer may also be formed in one step.

Abstract: In order to avoid an edge-effect (increased electrical field line density at the edges of electrolytically to be processed work pieces) during the electrolytic processing of work pieces 3.x in a conveyorized system, the electric currents originating from various counter electrodes 5.x in the plant are set to values in function of the electrolytically to be processed surface areas of the work pieces 3.x as far as they are located directly opposite the respective ones of the various counter electrodes 5.x. Moreover, the distance between the work pieces 3.x and the counter electrodes 5.x is chosen to be 50 mm maximum. Means 19 for individually controlling and adjusting every single current supply unit 15.x of the counter electrodes 5.x are provided for this purpose. Said means 19 are configured in such a manner that the respective electric currents originating from the various counter electrodes 5.x are settable to values in function of the electrolytically to be processed surface areas of the work pieces 3.

Abstract: A composite alloy has a three-dimensional periodic hierarchical structure having hard and soft metallic phases periodically arranged with a period having a length ranging from a nanometer scale to a millimeter scale. It is preferable that the three-dimensional periodic hierarchical structure has an alloy composition sloped microscopically within the period. The three-dimensional periodic hierarchical structure may be formed by periodically arranging rod-like hard and soft metallic phases having a width and a thickness ranging from a nanometer scale to a millimeter scale so that their side surfaces are adjacent to one another.

Abstract: A system for pumping electrolyte through an electrolysis cell where the pressure of at least a portion of the gas generated by the electrolysis cell is used as driving force for the pumping. The system may include an electrolyte reservoir and a pumping chamber connected via an inlet conduit to receive electrolyte from the electrolysis cell and connected via an outlet conduit to flow electrolyte to the electrolysis cell. The pumping chamber is connected to the electrolysis cell to receive at least a portion of the gas generated by the electrolysis cell to elevate the pressure of the electrolyte therein and force it into the electrolysis cell.

Abstract: A method of manufacturing a semiconductor device includes measuring the reflectance at the surface of a semiconductor substrate provided with concave portions and deciding a deposition parameter that represents a deposition condition corresponding to the measured reflectance. Then, a metal film is formed on the semiconductor substrate under a condition corresponding to the deposition parameter.

Abstract: Methods and apparatus for forming conductive interconnect layers useful in articles such as semiconductor chips, memory devices, semiconductor dies, circuit modules, and electronic systems. An electrochemical cell may be used in the reduction of oxides on a dual-purpose layer.

Abstract: A method and apparatus are described that use cell voltage and/or current as monitor to prevent electrochemical deposition (e.g., electroplating) tools from deplating wafers with no or poor metal (e.g., Cu) seed coverage. In one embodiment, the voltage of a plating cell including a reference wafer which has substantially complete Cu seed coverage is measured. A reference resistance of the plating cell with the reference wafer is determined. The voltage of the plating cell including a calibration wafer which has no or insufficient seed coverage at its edge is measured. A calibration resistance of the plating cell with the calibration wafer is determined. An error trigger based on a comparison of the reference resistance with the calibration resistance is selected.

Abstract: The present invention relates generally to any electrolyte and methods for monitoring the constituents contained therein. More specifically, the present invention relates to plating baths and methods for monitoring the constituents contained therein based on chemometric analysis of voltammetric data obtained for these baths. More particularly, the method of the present invention relates to application of numerous chemometric techniques of modeling power, outlier detection, regression and calibration transfer for analysis of voltammetric data obtained for various plating baths.

Abstract: Systems and methods for repairing defects on a specimen are provided. A method may include processing a specimen, detecting defects on the specimen, and repairing one or more of the defects. An additional method may include detecting defects on a specimen, repairing one or more of the defects, and inspecting the specimen to detect defects remaining on the specimen subsequent to repair. A system may include a process chamber, a measurement device configured to detect defects on a specimen, and a repair tool configured to repair one or more of the defects detected on the specimen. An additional system may include a measurement device, a repair tool, and an inspection tool configured to detect defects remaining on the specimen subsequent to repair. The systems may also include a processor configured to alter a parameter of an instrument coupled to the repair tool in response to output from the measurement device.

Abstract: Provided is a gas molecule sensor, characterized in that the sensing element is a polycrystalline tin oxide film having a thickness less than 1 ?m. The sensing element is produced by electrolytic deposit of a tin film on an insulating support in an electromechanical cell, where the anode is comprised of tin and the cathode is a conductive film applied on the surface of the insulating support at one of its ends, the two electrodes being separated by an electrolyte comprised of a tin salt solution, and by passing a constant current through said cell. The deposit step is followed by an oxidizing step.

Abstract: A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

Abstract: The concentration of a leveler in a plating liquid that is used by a plating apparatus for filling metal such as copper in interconnection trenches and holes defined in the surface of a semiconductor substrate or the like is determined based on a peak area (Ar value) in a peel-off region of the plating liquid measured according to a CV or CVS process.

Abstract: A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

Abstract: A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

Abstract: A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a numerical of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the numerical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

Abstract: A method of controlling a conductive layer deposition process includes depositing a conductive layer onto a semiconductor wafer based upon a deposition recipe, measuring a thickness of the conductive layer deposited on the semiconductor wafer, determining whether the measured thickness of the conductive layer is within a predetermined tolerance, and revising the deposition recipe if the thickness of the conductive layer is not within the predetermined tolerance.

Abstract: Methods and apparatus employ the use of arrays (301, 902) of two or more electronically-discrete electrodes (1, 2, 3 . . . ) to facilitate high-throughput preparation and testing of materials comprising two or more elements. High rates of deposition, synthesis and/or analysis of materials are achieved with the use of arrays of electrodes whereby desired materials are developed. The high rate synthesis and/or analysis of an array of materials uses deposition control techniques in conjunction with the electrode array to develop a meaningful array of materials and to analyze the materials for desired characteristics to develop one or more materials with desired characteristics. The use of an array of electrodes enables high-throughput development of materials having scientific and economic advantages.

Abstract: A ceramic coating is formed on a conductive article by immersing a first anodic electrode, including the conductive article, in an electrolyte comprising an aqueous solution of alkali metal hydroxide and an alkali metal silicate, providing a second cathodic electrode in contact with the electrolyte, and passing an alternating current from a resonant power source through the first electrode and to the second electrode while maintaining the angle ? between the current and the voltage at zero degree, while maintaining the voltage within a predetermined range. The resulting ceramic coated article comprises a coating which includes a metal, silicon, and oxygen, wherein the silicon concentration increases in the direction from the article surface toward an outer surface of the ceramic coating surface layer.

Abstract: A method and apparatus for providing a uniform current density across an immersed surface of a substrate during an immersion process. The method includes the steps of determining a time varying area of an immersed portion of the substrate during the immersion process, and supplying a time varying current to the substrate during the immersion process, wherein the time varying current is proportional to the time varying area and is configured to provide a constant current density to the immersed portion of the substrate.

Abstract: An apparatus and method is provided for analyzing or conditioning an electrochemical bath. One aspect of the invention provides a method for analyzing an electrochemical bath in an electrochemical deposition process including providing a first electrochemical bath having a first bath composition, utilizing the first electrochemical bath in an electrochemical deposition process to form a second electrochemical bath having a second bath composition and analyzing the first and second compositions to identify one or more constituents generated in the electrochemical deposition process. Additive material having a composition that is substantially the same as all or at least some of the one or more constituents generated in the electrochemical deposition process may be added to another electrochemical bath to produce a desired chemical composition.

Abstract: A process for forming oxide based dense ceramic composite coatings on reactive metal and allow bodies involves suspension of at least two reactive metal or alloy bodies in a non-metallic, non-conducting, non-reactive chamber in such a way that it causes either partial or full immersion of the bodies in a continuously circulating electrolyte. Thyristor controlled, modified shaped wave multiphase alternating current power supply is applied across the bodies where in each body is connected to an electrode. Electric current supplied to the bodies is slowly increased to a particular value till the required current density is achieved and the maintained at the same level throughout the process. Visible arcing at the surface of the immersed regions of the bodies is identified when the applied electric potential crosses 60V. Electric potential is further increased gradually to compensate the increasing resistance of the coating.

Abstract: The invention relates to the analysis of the performance and properties of electrochemical processes, and specifically, to electrolytic solutions and electrode processes. The invention discloses a device and a method for obtaining qualitative and quantitative information for the kinetics of the electrode reactions, the transport processes, the thermodynamic properties of the electrochemical processes taking place in the cell. When a deposition reaction takes place, the device provides also valuable information about the relationship between the current density and deposit properties including but not limited to the deposit color, luster, and other aspects of its appearance. The device disclosed herein typically is comprised of a multiplicity of cathodic or anodic regions where one or more electrochemical reactions take place simultaneously, but at a different rate.

Abstract: A method and apparatus for treating an aqueous electroplating bath solution. The method comprises continuously agitating the solution; adjusting the pH of the solution, adjusting the temperature of the solution while adding an amount of hydrogen peroxide sufficient to promote dissolution of the hydrogen peroxide and generation of hydroxyl radicals; and adding an amount of an iron-containing compound so as to increase the rate of dissolution of the hydrogen peroxide to hydroxyl radicals so as to oxidize the organic compounds; whereby the total amount of organic carbon compounds in the solution is reduced. The apparatus comprises a treatment vessel, a pump for transferring a portion of the solution from the vessel to a mixing tank and for transferring a second portion of the solution to a heat exchanger for heating or cooling the second portion of the solution and a pump for transferring hydrogen peroxide to the vessel.

Abstract: The invention concerns a method for regulating an electrolytic cell designed for aluminium production by fused bath electrolysis enabling accurate and reliable control, in time and optionally in space, of the amount of alumina dissolved in the electrolytic solution (13). The inventive regulating method is characterized in that it comprises: a) controlling the addition of a specific amount Qo of alumina in the solution (13); b) determining the value of an indicator A of the added amount Q of alumina which is rapidly dissolved in the solution (13); c) determining the amount &Dgr;Q of added alumina which is not rapidly dissolved in the solution (13); d) adjusting at least one setting means and/or one control operation and/or at least an intervention on the cell, on the basis of the value obtained for the amount &Dgr;Q, so as to maintain it or bring it down to a value lower than a reference value S.

Abstract: Embodiments of the invention provide methods of reducing electroplating defects by adjusting immersion conditions. For one embodiment, the immersion conditions are adjusted based upon characteristics of the substrate, including feature size. Additionally or alternatively, the immersion conditions may be adjusted based upon aspects of the electroplating process, including motion of the substrate upon immersion. Immersion conditions that may be adjusted in accordance with various embodiments of the invention include entry bias voltage/current, vertical immersion speed, and angle of immersion.

Abstract: A method for determining a quantity of each of alloy phases in the plating layer includes subjecting each alloy phase in the plating layer to constant potential electrolysis in each of a plurality of ranges of potentials obtained on the basis of the immersion potential of each alloy phase and the immersion potential of a basis metal, by using a plated metal material having different kinds of alloy phases in the plating layer as the anode, to determine the quantity of each alloy phase in the plating layer on the basis of the quantity of electricity consumed in each range of the potentials during the electrolysis.

Abstract: A method for controlling the chemical composition of an electroplating bath solution used to plate a plurality of substrates by providing the electroplating bath solution to a small-volume plating cell configured to minimize additive breakdown, and discarding the electroplating bath after a predetermined bath lifetime. The method includes predetermining a lifetime of an electroplating bath solution having a desired chemical composition, combining a plurality of electroplating bath solution components thereby forming the electroplating bath solution having the desired chemical composition, filling a small-volume plating cell with the electroplating bath solution, plating a plurality of substrates in the electroplating bath solution until the bath lifetime is reached; and discarding the electroplating bath solution after the bath lifetime is reached.

Abstract: The use of an insulating shield for improving the current distribution in an electrochemical plating bath is disclosed. Numerical analysis is used to evaluate the influence of shield shape and position on plating uniformity. Simulation results are compared to experimental data for nickel deposition from a nickel—sulfamate bath. The shield is shown to improve the average current density at a plating surface.

Abstract: In the electrolytic treatment, an acid concentration meter measures the concentration of hydrochloric acid. The difference from a measured value PVb to a preset value SVb of the concentration of hydrychloric acid is larger than preset value e, hydrochloric acid is fed out from an acid feeding section. The aluminum concentration meter measures the concentration of the aluminum chloride. A water feed cycle is calculated from a measured value PVa and a preset value SVa of the concentration of hydrochloric acid, and a total value of the electrolytic current I generated by a power source section. At every water feed cycle, a water feeding section feeds water to add to the electrolytic solution.

Abstract: Embodiments of the invention provide methods for electroplating a substrate that substantially reduce or eliminate protrusions and decrease WID thickness variations. The number of protrusions formed on the plating surface is highly dependent upon the electroplating current density. Embodiments of the invention vary the electroplating current waveform by implementing an initial current step sufficient to fill substrate features and a terminal current step sufficient to achieve the specified plating thickness while suppressing protrusions and within die thickness variations.

Abstract: A finite element model of the environment of electrodeposit coating is prepared by a simulation method, change of an electric field in an electrolytic cell for the case of electrodeposit coating is simulated, the distribution of currents then flowing through individual parts of a finite element model of a to-be-coated object is obtained, the electric variables of currents flowing through the respective surfaces of the finite elements of the to-be-coated object are obtained and accumulated according to the current distribution, the thickness of an electrodeposition coating film is calculated as h=&Sgr;KFICC.E.&Dgr;t/&rgr; if the cumulative electric variable is higher than a deposition starting electric variable such that a fixed concentration is attained by OH− or H+.

Abstract: A cyclic voltammetric method for measuring the concentration of additives in a plating solution. The method generally includes providing the plating solution, having an unknown concentration of an additive to be measured therein and cycling the potential of an inert working electrode through a series of measurement steps. The series of measurement steps includes a metal stripping step including pulsing from an open circuit potential to a metal stripping potential between about 0.2 V and about 0.8 V, and holding the metal stripping potential until a corresponding current nears 0 mA/cm. The series of measurement steps further includes a cleaning step including pulsing from the metal stripping potential to a cleaning potential between about 1.2 V and about 1.6 V, and holding the cleaning potential for about 2 seconds to about 10 seconds. The series of measurement steps then includes a pre-plating step including pulsing from the cleaning potential to a pre-plating potential between about −0.

Abstract: The present invention provides a solder plating system with automatic monitoring of wash fluid pressure. The system automatically activates an alarm and/or initiates shutdown of a solder plating machine when the pressure reading indicates a failure of the wash fluid supply. The system thereby reduces the number of parts that are affected by failures in the wash fluid supply system. In some cases, problems with the wash fluid supply are detected before any parts are affected.

Abstract: In an electroplating apparatus for semiconductor wafers, the currents to each of a plurality of contact portions contacting the wafer edge are individually adjustable and/or a parameter indicative of the current flow in each contact portion may be determined. Moreover, for precise control of the currents, means are provided for monitoring the currents.

Abstract: The present invention provides a web conveying apparatus for conveying a web while holding the web and applying tension to the web, wherein the conveying apparatus has a plurality of rollers with which the web contacts to be conveyed, and at least one roller of the plurality of rollers has a mechanism for limiting deformation of the web within Y/E, and a web conveying method using a web conveying apparatus for conveying a web while holding the web and applying tension to the web, wherein the conveying apparatus has a plurality of rollers with which the web contacts to be conveyed, and the web is conveyed while the deformation of the web is limited within Y/E by a mechanism that is provided for at least one roller of the plurality of rollers. The apparatus and the method prevent meandering of the web.

Abstract: A method for determining an end point of a planarization process for removing metal from a surface of a substrate submerged in an electrolytic solution or slurry. A first electrode is provided which is operable to contact the surface of the substrate, such as a working electrode of a potentiostat system. A second electrode is provided which is operable to contact the electrolytic solution, such as a reference electrode of the potentiostat system. The first electrode is contacted to the surface of the substrate and an electrochemical property is measured, such as the electrochemical potential between the first and second electrodes, where the electrochemical property is indicative of an electrochemical characteristic of the substrate-slurry system. The planarization process is preferably stopped when a substantial change in the electrochemical potential of the system is measured.

Abstract: An object of the present invention is to provide a method of monitoring deterioration of an electrolytic gold plating solution which can always stably performing gold plating by continuously detecting a deterioration state of the gold sulfite complex plating solution, and to provide an apparatus for monitoring the deterioration of the electrolytic gold plating solution. The present invention is characterized by an electrolytic gold plating method for performing electrolytic gold plating on a surface of a substrate body using a gold sulfite plating solution, wherein the gold plating is performed while deterioration of the plating solution is being always or intermittently detected during plating.

Abstract: The use of an insulating shield for improving the current distribution in an electrochemical plating bath is disclosed. Numerical analysis is used to evaluate the influence of shield shape and position on plating uniformity. Simulation results are compared to experimental data for nickel deposition from a nickel-sulfamate bath. The shield is shown to be an effective and simple way to improve current distribution uniformity, reducing the measured disparity between the average current density and the current density at center of a plating surface center from about 35% to less than about 10%.

Abstract: A method for determining a quantity of each of alloy phases in the plating layer includes subjecting each alloy phase in the plating layer to constant potential electrolysis in each of a plurality of ranges of potentials obtained on the basis of the immersion potential of each alloy phase and the immersion potential of a basis metal, by using a plated metal material having different kinds of alloy phases in the plating layer as the anode, to determine the quantity of each alloy phase in the plating layer on the basis of the quantity of electricity consumed in each range of the potentials during the electrolysis.

Abstract: A substrate treating apparatus provided with a plating unit, a bevel etching unit, a cassette stage on which a cassette for accommodating a wafer and a cassette for accommodating a dummy wafer are placed, and a transport robot for transporting the wafer or the dummy wafer among the cassettes, the plating unit and the bevel etching unit. The plating unit is capable of performing a copper plating process on the wafer and the dummy wafer, and the bevel etching unit is capable of etching a peripheral edge of the wafer and etching away a copper film formed on the dummy wafer.

Abstract: A method of manufacturing a positive electrode foil of an aluminum electrolytic capacitor is provided in which anodizing conditions are optimally determined and automatically set to minimize the loss of production and to produce a constant quality of the positive electrode foil. The method comprises an etching process and an anodizing process. An etched foil produced in the etching process is subjected to a constant current inspection, and then, the anodizing conditions are determined from the result of the constant current inspection. The anodizing conditions are transferred to a control panel in the anodizing process where they are automatically registered as its settings. Also, an apparatus for manufacturing the positive electrode foil is provided which has a voltage sensor connected between an output running roller and cathode electrodes in an anodizing tank. A voltage measured by the voltage sensor is fed back to a direct-current source for controlling its output voltage.

Abstract: The present invention provides methods and apparatus for analysis and monitoring of electrolyte bath composition. Based on the results of the analysis, the invention controls electrolyte bath composition and plating hardware. Thus, the invention provides control of electroplating processes based on plating bath composition data. The invention accomplishes this by incorporating mass spectral analysis into a feedback control mechanism for electroplating. Mass spectrometry is used to identify plating bath conditions and based on the results, the plating bath formulation and plating process are controlled.

Abstract: The present invention relates generally to any plating solution and methods for monitoring its performance. More specifically, the present invention relates to plating bath and methods for monitoring its plating functionality based on chemometric analysis of voltammetric data obtained for these baths. More particularly, the method of the present invention relates to application of numerous chemometric techniques to describe quantitatively plating bath functionality in order to maintain its proper performance.

Abstract: The concentration of a leveler in a plating liquid that is used by a plating apparatus for filling metal such as copper in interconnection trenches and holes defined in the surface of a semiconductor substrate or the like is determined based on a peak area (Ar value) in a peel-off region of the plating liquid measured according to a CV or CVS process.

Abstract: The present invention provides method of adjusting a thickness profile of a top metal layer of a workpiece using a processing solution. A thickness profile control member is included that has at least first and second regions that will allow for processing at respective first and second rates that are different from each other. When processing the workpiece, the processing system establishes relative lateral movement between the workpiece and the thickness profile control member so that a certain portion of the workpiece is disposed in locations that correspond to the first and second regions at different points in time during the processing. In a preferred aspect, the lateral movement is controlled as a result of data obtained from sensors relating to the thickness of a removed or deposited layer.

Abstract: A method and system are described to reduce process variation as a result of the electrochemical deposition (ECD), also referred to as electrochemical plating (ECP), and chemical mechanical polishing (CMP) processing of films in integrated circuit manufacturing processes. The described methods use process variation and electrical impact to direct the insertion of dummy fill into an integrated circuit.

Abstract: A cyclic voltammetric method for measuring the concentration of additives in a plating solution. The method generally includes providing the plating solution, having an unknown concentration of an additive to be measured therein and cycling the potential of an inert working electrode through a series of measurement steps. The series of measurement steps includes a metal stripping step including pulsing from an open circuit potential to a metal stripping potential between about 0.2 V and about 0.8 V, and holding the metal stripping potential until a corresponding current nears 0 mA/cm. The series of measurement steps further includes a cleaning step including pulsing from the metal stripping potential to a cleaning potential between about 1.2 V and about 1.6 V, and holding the cleaning potential for about 2 seconds to about 10 seconds. The series of measurement steps then includes a pre-plating step including pulsing from the cleaning potential to a pre-plating potential between about −0.

Abstract: In a control arrangement and a method for controlling an alkaline pressure electrolyzer including gas spaces for receiving the H2 and O2 gases generated by the pressure electrolyzer, a manual control input and an integrally operating controller for at least one of the control values gas pressure and fill level difference of the gas spaces, and an uncoupling network which provides control inputs for independently controlling at least one of the fill level difference and the gas pressure in the gas spaces, hydrogen and oxygen blowdown valves in communication with the respective gas spaces are controlled such that the blowdown flows of the hydrogen and the oxygen from the respective gas spaces are at a ratio of 2:1 and the sum of the blowdown gas flow volume change is zero.

Abstract: Disclosed is a method of analyzing components in an electroplating bath. Also disclosed is a method of controlling electroplating baths by monitoring the components of the plating bath in real-time.