Abstract: The present disclosure is directed to tantalum-alloy products, implantable medical devices that incorporate tantalum-alloy products such as stents or other implantable medical devices, methods of making and/or processing the tantalum-alloy products and implantable medical devices, and methods of using the implantable medical devices. In an embodiment, a stent includes a stent body having a plurality of struts. At least a portion of the stent body is made from a tantalum alloy. The tantalum alloy includes a tantalum content of about 77 weight % (“wt %”) to about 92 wt %, a niobium content of about 7 wt % to about 13 wt %, and a tungsten content of about 1 wt % to about 10 wt %. The tantalum alloy exhibits at least one mechanical property modified by heat treatment thereof, such as yield strength, ultimate tensile strength, or ductility.

Abstract: A method for manufacturing surgical blades from either a crystalline or poly-crystalline material, preferably in the form of a wafer, is disclosed. The method includes preparing the crystalline or poly-crystalline wafers by mounting them and machining trenches into the wafers. The methods for machining the trenches, which form the bevel blade surfaces, include a diamond blade saw, laser system, ultrasonic machine, and a hot forge press. The wafers are then placed in an etchant solution which isotropically etches the wafers in a uniform manner, such that layers of crystalline or poly-crystalline material are removed uniformly, producing single or double bevel blades. Nearly any angle can be machined into the wafer which remains after etching. The resulting radii of the blade edges is 5-500 nm, which is the same caliber as a diamond edged blade, but manufactured at a fraction of the cost.

Abstract: The present disclosure provides a method for etching a substrate. The method includes forming a resist pattern on the substrate; applying an etching chemical fluid to the substrate, wherein the etching chemical fluid includes a diffusion control material; removing the etching chemical fluid; and removing the resist pattern.

Abstract: A method for preparing nanotubes by providing nanorods of a piezoelectric material having an asymmetric crystal structure and by further providing hydroxide ions to the nanorods to etch inner parts of the nanorods to form the nanotubes.

Abstract: There are provided a processing liquid for suppressing pattern collapse of a fine metal structure, containing a pattern collapse suppressing agent that has a hydrocarbyl group containing any one of an alkyl group and an alkenyl group, both of which may be substituted partly or entirely by a fluorine atom, and contains an oxyethylene structure, and a method for producing a fine metal structure using the same.

Abstract: There is provided an etching method of an amorphous oxide layer containing In and at least one of Ga and Zn, which includes etching the amorphous oxide layer using an etchant containing any one of acetic acid, citric acid, hydrochloric acid, and perchloric acid.

Abstract: The invention concerns article having a surface oxide layer up to 20 nm thick, the surface oxide layer comprising chromium and cobalt oxides where the atomic ratio of Cr/Co is more than 3. The invention also concerns methods for treating a chromium containing material, said method comprising contacting said material with a gas plasma under conditions effective to oxidize at least a portion of the material; and contacting said material with an acid. The treated surface is corrosion resistant and can be used in orthopedic implants, especially the wear surface of the orthopedic implant to reduce wear, and other corrosive environment.

Abstract: The present invention is to provide a processing method for manufacturing a highly flat and highly smooth glass substrate with good productivity. A highly flat and highly smooth glass substrate is obtained with good productivity by processing of a glass substrate, which comprises a step of measuring the surface shape of the glass substrate prior to processing, a step of processing the surface of the substrate by changing a processing condition for each site (first processing step), and a step of finish-polishing the surface of the glass substrate that has been subjected to the first processing step (second processing step).

Abstract: A composition comprising a solution of potassium monopersulfate having an active oxygen content of from about 3.4% to about 6.8% and a process for its preparation including neutralization with an alkaline material is disclosed.

Abstract: An etching composition which comprises at least one organic carboxylic acid compound selected from acetic acid, propionic acid, butyric acid, succinic acid, citric acid, lactic acid, malic acid, tartaric acid, malonic acid, maleic acid, glutaric acid, aconitic acid, 1,2,3-propanetricarboxylic acid and ammonium salts of these acids, a polysulfonic acid compound and water, and an etching process which comprises etching a conductive film comprising zinc oxide as the main component using the etching composition described above.

Abstract: A process for selectively stripping a coating from a component of a turbomachine, and particularly a coating having a ceramic matrix that contains metallic particles dispersed therein that render the coating more difficult to remove from the component after the component has been subjected to elevated temperatures during operation of the turbomachine. The process generally includes immersing the component in an aqueous solution containing ferric chloride, nitric acid, and phosphoric acid, for a duration sufficient to attack the metallic particles in the coating. The component is then removed from the aqueous solution and its surface rinsed of the aqueous solution. The immersing and removing steps are then sequentially repeated a sufficient number of times to sufficiently attack the metallic particles to enable the coating to be mechanically removed from the component.

Abstract: A method for manufacturing a semiconductor device includes the step of conducting a cleaning process for a wafer formed with copper wiring lines to remove contaminations produced on a back surface of the wafer. The cleaning process is conducted by injecting onto the back surface of the wafer an etchant for removing contaminations and simultaneously injecting onto a front surface of the wafer a reductant containing hydrogen.

Abstract: Provided are an etchant, a method for fabricating a wire using the etchant, and a method for fabricating a thin film transistor (TFT) substrate using the etchant. The etchant includes a material having the formula 1, ammonium acetic acid, and the remainder of deionized water, wherein the formula 1 is expressed by: M(OH)XLY??(1) where M indicates Zn, Sn, Cr, Al, Ba, Fe, Ti, Si, or B, X indicates 2 or 3, L indicates H2O, NH3, CN, COR, or NH2R, Y indicates 0, 1, 2, or 3, and R indicates an alkyl group.

Abstract: A method for producing a ceramic substrate material having a first layer and possibly a further layer is specified. The first layer comprises at least one first component made of a crystalline ceramic material and/or a glass material as a matrix and a second component made of a further crystalline ceramic material, which is provided in the matrix. An etching step is performed, mantle areas of the crystals and/or crystal agglomerates of the second component being etched selectively in the first layer to generate a cavity structure in the first layer. The present invention also relates to a corresponding ceramic substrate material, an antenna or an antenna array, and the use of the ceramic substrate material for an antenna or an antenna array.

Abstract: A method of patterning a transparent conductive film adaptive for selectively etching a transparent conductive film without any mask processes, a thin film transistor for a display device using the same and a fabricating method thereof are disclosed. In the method of patterning the transparent conductive film, an inorganic material substrate is prepared. An organic material pattern is formed at a desired area of the inorganic material substrate. A thin film having a different crystallization rate depending upon said inorganic material and said organic material is formed. The thin film is selectively etched in accordance with said crystallization rate.

Abstract: A method for manufacturing blades for surgical and other uses from either a crystalline or polycrystalline material, preferably in the form of a wafer, comprises preparing the crystalline or polycrystalline wafers by mounting them and machining trenches into the wafers. The methods for machining the trenches, which form the bevel blade surfaces, include a diamond blade saw, laser system, ultrasonic machine, a hot forge press and a router. When a router is used, through-holes are drilled in the wafer to define the starting locations of the trenches. After the trenches are formed, the wafers are placed in an etchant solution which isotropically etches the wafers in a uniform manner, such that layers of crystalline or polycrystalline material are removed uniformly, producing single or double bevel blades, with each bevel having one or more facets. Nearly any bevel angle can be machined into the wafer which remains after etching.

Abstract: An object is to provide a process for producing a glass substrate provided with transparent electrodes, whereby in the case of producing a glass substrate provided with transparent electrodes by a laser patterning method, no scratches are formed on the surface of the glass substrate, the resistance value of the formed transparent electrodes is not increased, and the surface roughness is not increased.

Abstract: A strip-form silicon carbide furnace heating element is provided having a higher radiating surface area to volume ratio than a conventional tubular element.

Abstract: A remover contains an alkaline component, a bivalent zinc ion, a ferric ion, a chelating agent, and a nitrate ion. By using this remover, an anodized film can be selectively removed from an aluminum or aluminum-alloy member.

Abstract: A method for preparing nanotubes by providing nanorods of a piezoelectric material having an asymmetric crystal structure and by further providing hydroxide ions to the nanorods to etch inner parts of the nanorods to form the nanotubes.

Abstract: A method of substantially uniformly etching oxides from non-homogeneous substrates is provided. The method utilizes a substantially non-aqueous etchant including an organic solvent and a fluorine-containing compound. The fluorine containing compound may include HF, HF:NH4F, (NH4)HF2, or TMAF:HF and mixtures thereof. The etchant may be applied to chemically non-homogeneous layers such as shallow trench isolation fill oxide layers, or to layers having a non-homogeneous composition or density at different depths within the layers, such as spin-on-glass or spin-on-dielectric films.

Abstract: A composition for removing a conductive material and a manufacturing method of an array substrate using the composition, wherein the composition may include a nitric acid of about 3 to 15 wt %, a phosphoric acid of about 40 to 70 wt %, an acetic acid of about 5 to 35 wt %. The composition may further include a chlorine compound of about 0.05 to 5 wt %, a chlorine stabilizer of about 0.01 to 5 wt %, a pH stabilizer of about 0.01 to 5 wt %, and water of residual quantity.

Abstract: An organic EL panel and a method of forming the same, in which a bottom electrode of an organic EL device is flattened at the surface so that organic layers deposited thereon have uniform thicknesses, thereby avoiding the occurrence of leak currents and allowing favorable luminescence characteristics. The organic EL panel has an organic EL device formed on a substrate, the device comprising the bottom electrode, the organic layers including at least an organic luminescent layer, and a top electrode. The bottom electrode has an etched surface obtained by chemically etching a polished surface of an electrode material film. The organic layers are formed on the etched surface.

Abstract: The present invention provides an etchant composition containing 60 to 75 wt % of phosphoric acid (H3PO4), 0.5 to 15 wt % of nitric acid (HNO3), 2 to 15 wt % of acetic acid (CH3COOH), and 0.1 to 15 wt % of aluminum nitrate (Al(NO3)3).

Abstract: Provided are an etchant used for a transparent conductive oxide layer and a method for fabricating a liquid crystal display (LCD) using the etchant. The etchant includes 2-5 wt % sulfuric acid, 0.02-10 wt % hydrogen sulfate of alkali metal, and deionized water as the remainder.

Abstract: An etchant composition, and methods of patterning a conductive layer and manufacturing a flat panel display device using the same are provided. The etchant composition may include phosphoric acid, nitric acid, acetic acid, water and an additive, wherein the additive includes a chlorine-based compound, a nitrate-based compound, and an oxidation regulator. In addition, the flat panel display device may be manufactured by patterning a gate electrode, source/drain electrodes and a pixel electrode using the same etchant composition. The gate electrode, source/drain electrodes and the pixel electrode may be formed of different conductive materials. Accordingly, processes are simplified so that manufacturing costs may be reduced and productivity may be improved.

Abstract: Systematic and effective methodology to clean capacitively coupled plasma reactor electrodes and reduce surface roughness so that the cleaned electrodes meet surface contamination specifications and manufacturing yields are enhanced. Pre-cleaning of tools used in the cleaning process helps prevent contamination of the electrode being cleaned.

Abstract: A microwaviness reducing agent for polishing a substrate for a precision part, containing either a surfactant having two or more ionic hydrophilic groups, or a polycarboxylic acid compound having 2 to 15 total carbon atoms and having either OH group or groups or SH group or groups, or a salt thereof; a polishing composition for a substrate for a precision part, containing the microwaviness reducing agent, an abrasive and water; a polishing composition comprising water, an abrasive, an organic acid or a salt thereof, and a surfactant, wherein the organic acid is a polycarboxylic acid compound having 2 to 15 total carbon atoms and having either OH group or groups or SH group or groups, and wherein the surfactant has two or more ionic hydrophilic groups in its molecule and has a molecular weight of 300 or more; a method of reducing microwaviness of a substrate for a precision part; and a method for manufacturing a substrate for a precision part.

Abstract: Provided are an ITO sputtering target wherein the number of particles having a grain diameter of 100 nm or greater exposed in the ITO sputtering target as a result of royal water etching or sputter etching is 1 particle/?m2, and an ITO sputtering target having a density of 7.12 g/cm3 or greater capable of improving the sputtering performance, in particular inhibiting the generation of arcing, suppressing the generation of defects in the ITO film caused by such arcing, and thereby effectively inhibiting the deterioration of the ITO film.

Abstract: Disclosed is a method to construct a device that includes a plurality of nanowires (NWs) each having a core and at least one shell. The method includes providing a plurality of radially encoded NWs where each shell contains one of a plurality of different shell materials; and differentiating individual ones of the NWs from one another by selectively removing or not removing shell material within areas to be electrically coupled to individual ones of a plurality of mesowires (MWs). Also disclosed is a nanowire array that contains radially encoded NWs, and a computer program product useful in forming a nanowire array.

Abstract: The present invention relates to a novel dispensable medium for etching doped tin oxide layers having non-Newtonian flow behaviour for etching surfaces in the production of displays and/or solar cells and to the use thereof. In particular, it relates to corresponding particle-free compositions by means of which fine structures can be etched selectively without damaging or attacking adjacent areas.

Abstract: It is an object of the present invention to control damage of a phosphor caused by an etching solution. Disclosed is a method of manufacturing a phosphor having the steps of: (a) crushing phosphor particles via a crushing treatment process, and (b) surface-treating phosphor particles dispersed in a solvent by adding an etching solution via a surface treatment process, wherein an adding speed of the etching solution is in a range of 1.2×10?16-7.0×10?15 mol/min. per 1 m2 of specific surface area of the phosphor particles.

Abstract: Ophthalmic surgical blades are manufactured from either a single crystal or poly-crystalline material, preferably in the form of a wafer. The method comprises preparing the single crystal or poly-crystalline wafers by mounting them and etching trenches into the wafers using one of several processes. Methods for machining the trenches, which form the bevel blade surfaces, include a diamond blade saw, laser system, ultrasonic machine, a hot forge press and a router. Other processes include wet etching (isotropic and anisotropic) and dry etching (isotropic and anisotropic, including reactive ion etching), and combinations of these etching steps. The wafers are then placed in an etchant solution which isotropically etches the wafers in a uniform manner, such that layers of crystalline or poly-crystalline material are removed uniformly, producing single, double or multiple bevel blades. Nearly any angle can be machined into the wafer, and the machined angle remains after etching.

Abstract: A process for selectively stripping a coating from a component of a turbomachine, and particularly a coating having a ceramic matrix that contains metallic particles dispersed therein that render the coating more difficult to remove from the component after the component has been subjected to elevated temperatures during operation of the turbomachine. The process generally includes immersing the component in an aqueous solution containing ferric chloride, nitric acid, and phosphoric acid, for a duration sufficient to attack the metallic particles in the coating. The component is then removed from the aqueous solution and its surface rinsed of the aqueous solution. The immersing and removing steps are then sequentially repeated a sufficient number of times to sufficiently attack the metallic particles to enable the coating to be mechanically removed from the component.

Abstract: Provided are an etchant, a method for fabricating a wire using the etchant, and a method for fabricating a thin film transistor (TFT) substrate using the etchant. The etchant includes a material having the formula 1, ammonium acetic acid, and the remainder of deionized water, wherein the formula 1 is expressed by: M(OH)XLY??(1) where M indicates Zn, Sn, Cr, Al, Ba, Fe, Ti, Si, or B, X indicates 2 or 3, L indicates H2O, NH3, CN, COR, or NH2R, Y indicates 0, 1, 2, or 3, and R indicates an alkyl group.

Abstract: The invention provides chemical-mechanical polishing systems, and methods of polishing a substrate using the polishing systems, comprising (a) an abrasive, (b) a liquid carrier, and (c) a positively charged polyelectrolyte with a molecular weight of about 15,000 or more, wherein the abrasive comprises particles that are electrostatically associated with the positively charged polyelectrolyte.

Abstract: Li impurities are removed from a substrate of ZnO formed by a hydrothermal synthesis method. The surface layer of the substrate with Li impurities removed, is etched to planarize the substrate.

Abstract: A semiconductor device fabrication method comprises (1) forming a patterned mask layer on an oxide layer of a Mn-containing perovskite type oxide; (2) heat-treating the oxide layer; and (3) patterning the oxide layer with an etching solution containing at least one of hydrochloric acid, sulfuric acid, and nitric acid after the heat treatment of the oxide layer.

Abstract: An optical thin film stack for a dark aperture is deposited using thermal ion-assisted deposition (“IAD”). The IAD provides an energetic deposition of chromium and chromium oxide that results in a dark mirror optical thin film stack with superior etch properties. Edge definition is improved, and the edge profile is controllable by the selection of IAD parameters. An in situ IAD cleaning process can be used to clean the substrate sufficiently so that an intermediate adhesion layer of chromium is not required.

Abstract: A method of etching a metal oxide film includes depositing a metal (M) on the metal oxide film and contacting the metal oxide film and the metal (M) with an etch liquid comprising an acid (A) and a metal dissolution agent (X). The method can avoid patchwise etch.

Abstract: Provided is a sputtering target, backing plate or apparatus inside a sputtering device in which an electrical discharge machining mark is formed on the face to which unwanted films during sputtering are deposited, and the electrical discharge machining mark is formed from numerous inclined protrusions having a depression angle of less than 90°. When necessary, chemical etching is further performed to the portions subject to such electrical discharge machining. Thereby, the separation and flying of deposits arising from the face to which unwanted films of the target, backing plate and apparatus inside the sputtering device are deposited can be prevented.

Abstract: A method for manufacturing surgical blades from either a crystalline or poly-crystalline material, preferably in the form of a wafer, is disclosed. The method includes preparing the crystalline or poly-crystalline wafers by mounting them and machining trenches into the wafers. The methods for machining the trenches, which form the bevel blade surfaces, include a diamond blade saw, laser system, ultrasonic machine, and a hot forge press. The wafers are then placed in an etchant solution which isotropically etches the wafers in a uniform manner, such that layers of crystalline or poly-crystalline material are removed uniformly, producing single or double bevel blades. Nearly any angle can be machined into the wafer which remains after etching. The resulting radii of the blade edges is 5–500 nm, which is the same caliber as a diamond edged blade, but manufactured at a fraction of the cost.

Abstract: A thin film heater includes at least two open regions formed along each of two spaced-apart edges of the thin film material, which edges are parallel to two spaced-apart edges of the underlying substrate. The open regions expose areas of underlying substrate. When electrical power is coupled to the two spaced-apart edges of the thin film material, uniformity of the heat generated across the thin film material is enhanced. The substrate may be planar or curved, and the open regions in the thin film material may be removed from deposited thin film material, or may be formed by preventing deposition of thin film material in such regions.

Abstract: A method of fabricating a support electrode for a solid oxide fuel cell includes (a) providing a solid support electrode having an upper surface, the solid electrode comprising an electronically non-conductive material and an electronically conductive material; (b) applying a mask over the upper surface to create a desired unmasked pattern on the top surface; (c) removing the desired amount of material(s) from the unmasked pattern to a predetermined depth of the support electrode; and (d) removing the mask.

Abstract: Metal oxide films such as lithium niobate are formed in an amorphous state on a substrate such as lithium niobate and can be readily etched by conventional liquid or dry etchants. The amorphous film may then be converted by annealing to a crystalline form well suited to formation of electro-optical devices.

Abstract: A method of patterning a substrate includes forming a liquid film on the substrate surface and directing laser energy from a laser through the film to etch the substrate surface. Etched material is carried away from the substrate surface via evaporation of the film during the etching. The liquid film may be formed on the substrate surface by jetting a liquid vapor onto the substrate.

Abstract: A method for removing at least a portion of a structure, such as a layer, film, or deposit, including ruthenium metal and/or ruthenium dioxide includes contacting the structure with a material including ceric ammonium nitrate. A material for removing ruthenium metal and amorphous ruthenium dioxide includes ceric ammonium nitrate and may be in the form of an aqueous solution including ceric ammonium nitrate and optionally, other solid or liquid solutes providing desired properties. In one application, the method and material may be utilized to etch, shape, or pattern layers or films of ruthenium metal and/or ruthenium dioxide in the fabrication of semiconductor systems and their elements, components, and devices, such as wires, electrical contacts, word lines, bit lines, interconnects, vias, electrodes, capacitors, transistors, diodes, and memory devices.

Abstract: A method for treating surfaces of titanium or titanium alloys which includes the steps of applying a treatment for removing surface adhesion substances from the surface and then forming a transparent protective layer on the surface.

Abstract: A method for correcting characteristics of an attenuated phase-shift mask having an attenuated layer including (a) storing a data in a memory, which shows a correlation between characteristics and process conditions, (b) measuring the characteristics of the attenuated phase-shift mask, (c) calculating a appropriate process condition from the result of the step (b) and the data stored in the memory; and (d) soaking the attenuated phase-shift mask into a liquid solution for a certain time-that is calculated in the step (c) to change thickness and composition of the attenuated layer.

Abstract: The invention provides a chemical-mechanical polishing systems, and methods of polishing a substrate using the polishing systems, comprising (a) an abrasive, (b) a liquid carrier, and (c) a positively charged polyelectrolyte with a molecular weight of about 15,000 or more, wherein the abrasive comprises particles that are electrostatically associated with the positively charged electrolyte.