Abstract: Described is a polishing technique adapted for multilevel metallization of an electronic circuit device, which comprises polishing a metal film with a polishing liquid containing an oxidizing substance, a phosphoric acid and a protection-layer forming agent. The present invention makes it possible to polishing a metal film at a high removal rate while suppressing occurrence of scratches, delamination, dishing or erosion.

Abstract: A method of removing a ceramic coating, such as a thermal barrier coating (TBC) of yttria-stabilized zirconia (YSZ), from the surface of a component, such as a gas turbine engine component. The method generally entails subjecting the ceramic coating to an aqueous solution of ammonium bifluoride, optionally containing a wetting agent, such as by immersing the component in the solution while maintained at an elevated temperature. Using the method of the invention, a ceramic coating can be completely removed from the component and any cooling holes, with essentially no degradation of the bond coat.

Abstract: A composition composed of a persulfate, boric acid, a fluorine containing acid and an inorganic acid. Adjuvants also may be included in the composition. The composition may be employed as a microetch solution in the fabrication of microelectronic packages.

Abstract: Metal oxide films are etched with a metal and an etch liquid containing an acid and a metal penetration control agent.

Abstract: The present invention provides a composition for chemical-mechanical polishing which comprises at least one abrasive particle having a surface at least partially coated by a activator. The activator comprises a metal other than a metal of Group 4(b), Group 5(b) or Group 6(b). The composition further comprises at least one oxidizing agent. The composition is believed to be effective by virtue of the interaction between the activator coated on the surface of the abrasive particles and the oxidizing agent, at the activator surface, to form free radicals. The invention further provides a method that employs the composition in the polishing of a feature or layer, such as a metal film, on a substrate surface. The invention additionally provides a substrate produced this method.

Abstract: A method for forming waveguides in an optical material such as lithium niobate comprises the steps of providing an exchange agent including a proton-supplying medium and a catalyst, and exposing a selected portion of the optical material to the exchange agent for a predetermined time and at a predetermined temperature. Preferably, the catalyst is a metallic cation having a valence of at least +2, and the proton-supplying medium is a weak acid with a pKa of greater than about 4.5 or a lithium-buffered (“starved”) acidic solution. The catalyst accelerates the rate at which protons are exchanged with corresponding ions in the optical material lattice, thereby reducing the time required to produce a waveguide in the exposed portion of the optical material.

Abstract: A method of preparing a silicon surface for a subsequent processing said such as thermal oxidation, or metal silicide formation, via use of a novel wet chemical clean procedure, has been developed. The novel wet chemical clean procedure is comprised of three specific stages, with the first stage featuring the removal of organic contaminants and the growth of a native oxide layer on the silicon surface. A second stage features removal of the native oxide layer and removal of metallic contaminants from the silicon surface, while the third stage is used to dry the silicon surface. The novel wet chemical clean procedure is performed in less time, and using less chemicals, then counterpart wet chemical cleans also used for the preparation of silicon surfaces for subsequent processing steps.

Abstract: A method for pattern-etching thick alumina layers in the manufacture of thin film heads (TFH) by using compatible metallic mask layers and a wet chemical etchant. The deep alumina etching facilitates a studless TFH device where the coil and bonding pads are deposited and patterned simultaneously, and vias are later etched through the alumina overcoat layer to expose the bonding pads. The method also enables the etching of scribe-line grooves of street and alleys across the wafer for sawing and machining of sliders. These grooves eliminate most alumina chipping due to stress and damage introduced by the sawing and machining operations. Similarly, pattern-etching of the alumina undercoat facilitates the formation of precise craters for recessed structures. These can improve planarity and alleviate problems related to adverse topography and elevated features of TFH devices.

Abstract: This invention provides a process for treating a workpiece having a front side, a back side, and an outer perimeter. In accordance with the process, a processing fluid is selectively applied or excluded from an outer peripheral margin of at least one of the front or back sides or the workpiece. Exclusion and/or application of the processing fluid occurs by applying one or more processing fluids to the workpiece as the workpiece and corresponding reactor are spinning about an axis of rotation that is generally orthogonal to the center of the face of the workpiece being processed. The flow rate of the one or more processing fluids, fluid pressure, and/or spin rate are used to control the extent to which the processing fluid is selectively applied or excluded from the outer peripheral margin.

Abstract: An etchant for patterning indium tin oxide, wherein the etchant is a mixed solution of HCl, CH3COOH, and water, and a method of fabricating a liquid crystal display device are disclosed in the present invention. The method includes forming a gate electrode on a substrate, forming a gate insulating layer and an amorphous silicon layer on the gate electrode including the substrate, forming an active area by patterning the amorphous silicon layer, forming a source electrode and a drain electrode on the active area, forming a passivation layer on the source electrode and the drain electrode and the gate insulating layer, forming a contact hole exposing a part of the drain electrode, forming an indium tin oxide layer on the passivation layer, and forming an indium tin oxide electrode by selectively etching the indium tin oxide layer using a mixed solution of HCl, CH3COOH, and water as an etchant.

Abstract: A phase shifting mask repair process is described. The process uses an etching gas or a hydrofluoric acid solution to etch the quartz substrate and the characteristics of the phase shifter layer being only slightly etched when clean with a NH3/H2O2/H2O2 solution to calculate and adjust the respective processing time accordingly. As a result, the phase difference between the quartz substrate and the MoSiON phase shifter layer stays relatively the same before and after the repair process.

Abstract: The invention includes a method of cleaning a surface of a copper-containing material by exposing the surface to an acidic mixture comprising NO3−, F− and one or more organic acid anions having carboxylate groups. The invention also includes a semiconductor processing method of forming an opening to a copper-containing material. A mass is formed over a copper-containing material within an opening in a substrate. The mass contains at least one of an oxide barrier material and a dielectric material. A second opening is etched through the mass into the copper-containing material to form a base surface of the copper-containing material that is at least partially covered by particles comprising at least one of a copper oxide, a silicon oxide or a copper fluoride. The base surface is cleaned with a solution comprising nitric acid, hydrofluoric acid and one or more organic acids to remove at least some of the particles.

Abstract: A method for correcting characteristics of an attenuated phase-shift mask having an attenuated layer including (a) storing a data in a memory, which shows a correlation between characteristics and process conditions, (b) measuring the characteristics of the attenuated phase-shift mask, (c) calculating a appropriate process condition from the result of the step (b) and the data stored in the memory; and (d) soaking the attenuated phase-shift mask into a liquid solution for a certain time-that is calculated in the step (c) to change thickness and composition of the attenuated layer.

Abstract: A method for removing at least a portion of a structure, such as a layer, film, or deposit, including ruthenium metal and/or ruthenium dioxide includes contacting the structure with a material including ceric ammonium nitrate. A material for removing ruthenium metal and amorphous ruthenium dioxide includes ceric ammonium nitrate and may be in the form of an aqueous solution including ceric ammonium nitrate and, optionally, other solid or liquid solutes providing desired properties. In one application, the method and material may be utilized to etch, shape, or pattern layers or films of ruthenium metal and/or ruthenium dioxide in the fabrication of semiconductor systems and their elements, components, and devices, such as wires, electrical contacts, word lines, bit lines, interconnects, vias, electrodes, capacitors, transistors, diodes, and memory devices.

Abstract: A reaction byproduct which is generated when a ferro-dielectric material film is etched is removed without giving adverse effect on the semiconductor element. After the etching of the ferro-dielectric material film, a wetting process may performed using an aqueous solution of phosphoric acid. After the ferro-dielectric material film is etched using the resist as the mask, the wetting process is also performed using the aqueous solution of phosphoric acid before and after the ashing of resist.

Abstract: A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.

Abstract: A chemical-mechanical jet etching method rapidly removes large amounts of material in wafer thinning, or produces large-scale features on a silicon wafer, gallium arsenide substrate, or similar flat semiconductor workpiece, at etch rates in the range of 10-100 microns of workpiece thickness per minute. A nozzle or array of nozzles, optionally including a dual-orifice nozzle, delivers a high-pressure jet of machining etchant fluid to the surface of the workpiece. The machining etchant comprises a liquid or gas, carrying particulate material. The liquid may be a chemical etchant, or a solvent for a chemical etchant, if desired. The areas which are not to be etched may be shielded from the jet by a patterned mask, or the jet may be directed at areas from which material is to be removed, as in wafer thinning or direct writing, depending on the size of the desired feature or etched area.

Abstract: A simple surface treatment process is provided which offers a high performance surface for a variety of applications at low cost. This novel surface treatment, which is particularly useful for Ti-6Al-4V alloys, is achieved by forming oxides on the surface with a two-step chemical process and without mechanical abrasion. First, after solvent degreasing, sulfuric acid is used to generate a fresh titanium surface. Next, an alkaline perborate solution is used to form an oxide on the surface. This acid-followed-by-base treatment is cost effective and relatively safe to use in commercial applications. In addition, it is chromium-free, and has been successfully used with a sol-gel coating to afford a strong adhesive bond that exhibits excellent durability after the bonded specimens have been subjected to a harsh 72 hour water boil immersion. Phenylethynyl containing adhesives were used to evaluate this surface treatment with a novel coupling agent containing both trialkoxysilane and phenylethynyl groups.

Abstract: A method for correcting characteristics of an attenuated phase-shift mask having an attenuated layer including (a) storing a data in a memory, which shows a correlation between characteristics and process conditions, (b) measuring the characteristics of the attenuated phase-shift mask, (c) calculating a appropriate process condition from the result of the step (b) and the data stored in the memory; and (d) soaking the attenuated phase-shift mask into a liquid solution for a certain time that is calculated in the step (c) to change thickness and composition of the attenuated layer.

Abstract: Fixtures and methods for clamping workpieces in a workplace to enable the optimized exposure thereof to a stream or flow of a supercritical fluid. Provided is a rotatably indexable chuck or locator mounting the workpiece and enabling orientating the latter in specific static pitch position within a high pressure vessel in order to subject the workpiece to a full frontal exposure to the supercritical fluid stream within the vessel. This mounting arrangement facilitates an optimum positioning of the workpiece being processed in the flow path of the supercritical fluid stream while oriented in selectively indexed rotational positions.

Abstract: A process is described for etching oxide films containing at least one bismuth-containing oxide, in particular a ferroelectric bismuth-containing mixed oxide. A substrate onto which at least one oxide film containing at least one bismuth-containing oxide has been applied is provided. An etching solution containing from 2 to 20% by weight of a fluoride ion donor, from 15 to 60% by weight of nitric acid and from 20 to 83% by weight of water is brought into contact with the substrate so that the etching solution can react with the oxide film. The etching solution is removed from the substrate. The etching solution is also used in a process for structuring bismuth-containing oxide films.

Abstract: A method for removing at least a portion of a structure, such as a layer, film, or deposit, including ruthenium metal and/or ruthenium dioxide includes contacting the structure with a material including ceric ammonium nitrate. A material for removing ruthenium metal and amorphous ruthenium dioxide includes ceric ammonium nitrate and may be in the form of an aqueous solution including ceric ammonium nitrate and, optionally, other solid or liquid solutes providing desired properties. In one application, the method and material may be utilized to etch, shape, or pattern layers or films of ruthenium metal and/or ruthenium dioxide in the fabrication of semiconductor systems and their elements, components, and devices, such as wires, electrical contacts, word lines, bit lines, interconnects, vias, electrodes, capacitors, transistors, diodes, and memory devices.

Abstract: The present invention provides a process for etching a corrosion layer, such as oxide or hydroxide, from and concomitantly forming a passivating layer on the surface of metallic nanoparticles. A reaction mixture is prepared by dispersing sodium hexafluoroacetylacetonate (Na(hfa)) and a metallic particle powder having oxide or hydroxide corrosion layers in hexane solvent. The mixture is allowed to react for a time sufficient to etch the oxide or hydroxide groups from the particulate surface and passivate the surfaces with (hfa). Hexane may be evaporated from the mixture and any excess Na(hfa) separated from the reaction mixture by sublimation or rinsing with a polar aprotic solvent. In an embodiment of the present invention, aluminum particles are first etched and passivated and then used to form ohmic contacts with p-type silicon. This etching/passivation improves the electrical properties of the contact.

Abstract: A method of manufacturing electronic components includes disposing a top metal layer (502) comprised of solder over a bottom metal layer (201, 202) comprised of titanium or tungsten, and selectively etching the bottom metal layer (201, 202) over the top metal layer (502) with an etchant mixture (601) comprised of an etchant, an additive to control the temperature of the etchant mixture (601), and another additive to reduce the redeposition of the top layer (502).

Abstract: A method for producing sliders without alumina overcoat protrusion on the air bearing surface. The method comprises a method for removing alumina protrusion on the air bearing surface of a slider comprising contacting the air bearing surface of the slider with an aqueous base having a pH of about 9 to about 11.

Abstract: A pixel electrode employs a transparent electrode made from indium-zinc-oxide (IZO) that is capable of preventing damage and bending thereof. In a liquid crystal display device containing pixel electrodes, the transparent electrode is made from indium-zinc-oxide (IZO) having an amorphous structure so that it can be etched within a short period of time with a low concentration of etchant. Accordingly, it is possible to prevent damage and bending of the transparent electrode upon the patterning thereof.

Abstract: A method for removing at least a portion of a structure, such as a layer, film, or deposit, including ruthenium metal and/or ruthenium dioxide includes contacting the structure with a material including ceric ammonium nitrate. A material for removing ruthenium metal and amorphous ruthenium dioxide includes ceric ammonium nitrate and may be in the form of an aqueous solution including ceric ammonium nitrate and, optionally, other solid or liquid solutes providing desired properties. In one application, the method and material may be utilized to etch, shape, or pattern layers or films of ruthenium metal and/or ruthenium dioxide in the fabrication of semiconductor systems and their elements, components, and devices, such as wires, electrical contacts, word lines, bit lines, interconnects, vias, electrodes, capacitors, transistors, diodes, and memory devices.

Abstract: A method for removing at least a portion of a structure, such as a layer, film, or deposit, including ruthenium metal and/or ruthenium dioxide includes contacting the structure with a material including ceric ammonium nitrate. A material for removing ruthenium metal and amorphous ruthenium dioxide includes ceric ammonium nitrate and may be in the form of an aqueous solution including ceric ammonium nitrate and, optionally, other solid or liquid solutes providing desired properties. In one application, the method and material may be utilized to etch, shape, or pattern layers or films of ruthenium metal and/or ruthenium dioxide in the fabrication of semiconductor systems and their elements, components, and devices, such as wires, electrical contacts, word lines, bit lines, interconnects, vias, electrodes, capacitors, transistors, diodes, and memory devices.

Abstract: A method of removing a ceramic coating (18), and particularly zirconia-containing thermal barrier coating (TBC) materials such as yttria-stabilized zirconia (YSZ), that has been either intentionally or unintentionally deposited on the surface of a component (10). The method entails subjecting the ceramic coating (18) to an aqueous solution containing an acid fluoride salt, such as ammonium bifluoride (NH4HF2) or sodium bifluoride (NaHF2), and a corrosion inhibitor. The method is capable of completely removing the ceramic coating (18) without removing or damaging the underlying substrate material, which may include a metallic bond coat (16).

Abstract: A microturbine fabricated by a three-level semiconductor batch-fabrication process based on polysilicon surface-micromachining. The microturbine comprises microelectromechanical elements formed from three polysilicon multi-layer surfaces applied to a silicon substrate. Interleaving sacrificial oxide layers provides electrical and physical isolation, and selective etching of both the sacrificial layers and the polysilicon layers allows formation of individual mechanical and electrical elements as well as the required space for necessary movement of rotating turbine parts and linear elements.

Abstract: A composition for selective etching of oxides over a metal. The composition contains water, hydroxylammonium salt, carboxylic acid, a fluorine containing compound, and optionally, a base. The pH of the composition is about 2 to 6.

Abstract: A phase shifting mask repair process is described. The process uses an etching gas or a hydrofluoric acid solution to etch the quartz substrate and the characteristics of the phase shifter layer being only slightly etched when clean with a NH3/H2O2/H2O2 solution to calculate and adjust the respective processing time accordingly. As a result, the phase difference between the quartz substrate and the MoSiON phase shifter layer stays relatively the same before and after the repair process.

Abstract: In a method for manufacturing a semiconductor device, a barrier metal disposed on a metallic thin film for forming a thin film resistor is patterned by wet-etching. The wet-etching produces a residue of the barrier metal. The residue is removed after the oxidation thereof. Accordingly the residue is completely removed. As a result, the patterning of the thin film resistor is stably performed, and short-circuit does not occur to a wiring pattern disposed above the barrier metal.

Abstract: Polishing slurries for use in polishing substrates having a nickel or nickel-containing surface, such as those used for magnetic media, are described. The slurries include, in addition to a chemical etchant such as aluminum nitrate and suspended abrasive particles, an oxidizer which converts nickel metal at the surface to nickel oxide, but does not solubilize the nickel oxide in the aqueous medium to any significant degree. Preferred oxidizers include hydrogen peroxide, ferric nitrate and potassium iodate.

Abstract: A method of polishing ferroelectric materials and specifically perovskite materials and still more specifically barium strontium titanate (1) wherein the surface (5) to be polished is initially partially smoothened or planarized by mechanical abrading with final smoothening or planarization provided by a chemical polishing with a polishing wheel using an acidic solution containing essentially the acid, hydrogen peroxide and water. Preferred acids are perchloric acid, acetic acid, nitric acid and combinations thereof.

Abstract: A method of manufacturing electronic components includes disposing a top metal layer (502) comprised of solder over a bottom metal layer (201, 202) comprised of titanium or tungsten, and selectively etching the bottom metal layer (201, 202) over the top metal layer (502) with an etchant mixture (601) comprised of an etchant, an additive to control the temperature of the etchant mixture (601), and another additive to reduce the redeposition of the top layer (502).

Abstract: Metal oxide films are etched with a metal and an etch liquid containing an acid and a metal penetration control agent.

Abstract: A method of removing a ceramic coating, such as a thermal barrier coating (TBC) of yttria-stabilized zirconia (YSZ), from the surface of a component, such as a gas turbine engine component. The method generally entails subjecting the ceramic coating to an aqueous solution of ammonium bifluoride, optionally containing a wetting agent, such as by immersing the component in the solution while maintained at an elevated temperature. Using the method of the invention, a ceramic coating can be completely removed from the component and any cooling holes, with essentially no degradation of the bond coat.

Abstract: A method is provided for etching and removing extraneous molybdenum or debris on ceramic substrates such as semiconductor devices and also for molybdenum etching in the fabrication of molybdenum photomasks. The method employs a multi-step process using an acidic aqueous solution of a ferric salt to remove (etch) the molybdenum debris followed by contacting the treated substrate with an organic quaternary ammonium hydroxide to remove any molybdenum black oxides which may have formed on the exposed surface of treated molybdenum features in ceramic substrates. The method is environmentally safe and the waste solutions may be easily waste treated for example by precipitating the ferric salts as ferric hydroxide and removing anions such as sulfate by precipitation with lime. The method replaces the currently used method of employing ferricyanide salts which create serious hazardous waste disposal and environmental problems.

Abstract: A method of removing a thermal barrier coating from cooling holes in the surface of a component designed for use in a hostile thermal environment, such as the turbine, combustor and augmentor sections of a gas turbine engine. The method is particularly suited for completely removing a thermal insulating ceramic layer of a thermal barrier coating system that includes a metallic bond coat, such as a diffusion aluminide or MCrAlY coating, that bonds the ceramic layer to the component surface. Processing steps generally include removing the ceramic layer from the component surface surrounding the cooling hole, followed by removing that portion of the ceramic layer within the cooling hole by immersing the component in a liquid and then directing ultrasonic energy into the cooling hole.

Abstract: Masked tin oxide films are etched with an etchant composed of hydrochloric acid and a penetration control agent. The exposed metal oxide film is reduced to metallic tin by the action of active hydrogen (H0) produced in the reaction of zinc with acid, and etching stops when the metallic tin becomes impenetrable to H0.

Abstract: The present invention relates to an improved oxygen sensor and particularly to oxygen sensors used as exhaust sensors in vehicles. The oxygen sensor, which has an improved lean-rich response time and operability at lower temperatures, has been chemically etched and electrically treated, or chemically etched with a non-hydrofluoric acid solution.

Abstract: Masked tin oxide films are etched with an etchant composed of a zinc metal, an acid and a Ni++ penetration control agent. The exposed metal oxide film is reduced to metallic tin by the action of active hydrogen (H0) produced in the reaction of zinc with acid, and etching stops when the metallic tin becomes impenetrable to H0.

Abstract: Masked tin oxide films are etched with an etchant composed of zinc metal, HCl, and a penetration control agent. The exposed metal oxide film is reduced to metallic tin by the action of active hydrogen (Ho) produced in the reaction of zinc with acid, and etching stops when the metallic tin becomes impenetrable to Ho.

Abstract: A method for removing at least a portion of a structure, such as a layer, film, or deposit, including ruthenium metal and/or ruthenium dioxide includes contacting the structure with a material including ceric ammonium nitrate. A material for removing ruthenium metal and amorphous ruthenium dioxide includes ceric ammonium nitrate and may be in the form of an aqueous solution including ceric ammonium nitrate and, optionally, other solid or liquid solutes providing desired properties. In one application, the method and material may be utilized to etch, shape, or pattern layers or films of ruthenium metal and/or ruthenium dioxide in the fabrication of semiconductor systems and their elements, components, and devices, such as wires, electrical contacts, word lines, bit lines, interconnects, vias, electrodes, capacitors, transistors, diodes, and memory devices.

Abstract: A method for improving etch uniformity during a wet etching process is disclosed. The method comprises the steps of first rinsing the wafer to form a water film over the wafer surface, followed by liquid phase etching. The water film helps the subsequent viscous etchant to be spread across the wafer surface more uniformly to thereby improve the etch uniformity.

Abstract: An oxide etchant and method of etching are provided. The etchant includes at least one fluorine-containing compound and at least one auxiliary component selected from the group of a boron-containing compound and a phosphorus-containing compound.

Abstract: A wet chemical process is provided for treating an emitter formed on a substrate of a field emission display, the process comprises applying a solution including hydrogen to the emitter. In one embodiment of the invention, the steps of applying a solution comprises applying a solution of hydrofluoric acid to the emitter.

Abstract: A method for enhancing the conductivity of transparent conductive electrodes on display substrates by providing patterned auxiliary metallic layers adjacent to the transparent conductive material. The method of the present invention eliminates the need for aligning the auxiliary metal layers with preexisting transparent conductive electrodes by providing for simultaneous patterning of the auxiliary metal layers and formation of the independently addressable electrodes.

Abstract: A catalytic method and an apparatus for selectively removing material from a solid substrate is provided. The method comprises contacting a surface of a solid substrate with a catalyst material in the presence of a reactant under conditions effective to selectively remove material from those areas of said solid substrate in contact with said catalyst material and said reactant.