Abstract: A method of producing a mold having an uneven structure and a mold for an optical element are provided. The method includes forming on a nickel substrate a mixed film using nickel and a material which phase separates from nickel simultaneously, the mixed film including a plurality of cylinders including nickel as a component thereof and a matrix region including the material which phase separates from nickel as a component thereof and surrounding the plurality of cylinders; and removing the matrix portion from the mixed film by etching to give a mold including nickel or a nickel alloy. The uneven structure is disposed in plurality on the substrate, and a pitch of the uneven structure is within a range of 30 nm or more and 500 nm or less and a depth of the uneven structure is within a range of 100 nm or more.

Abstract: A method for fabricating micromachined structures is provided. A structure including a dielectric layer, a metal layer and a passivation layer is formed, wherein the dielectric layer has a via thereon. An etching window is formed on the passivation layer. An etching solution is poured into the via through the etching window to perform a process of etching. After etching, the etching solution is removed and the passivation layer is removed. Finally, the structure is etched again to form the micromachined structure.

Abstract: A process for preparing an imaging surface of an imaging transfer member in a printing machine, the process comprises providing a surface roughness to the imaging surface to produce a plurality of pits having sharp features on the surface, and then exposing the pitted imaging surface to an acid dip for a time period sufficient to substantially reduce the sharp features on the imaging surface. This process may be followed by anodization. The process produces an imaging surface having a pit structure providing reduced oil consumption and wear of components of the printing machine that contact the imaging surface.

Abstract: An etching process is employed to selectively pattern an exposed magnetic layer of a magnetic thin film structure. The etching process generally includes selectively patterning a magnetic film structure comprises providing a magnetic structure comprising at least one bottom magnetic layer, at least one top magnetic layer, wherein the at least one bottom magnetic layer is separated from the at least one top magnetic layer by a tunnel barrier layer; and selectively etching the top magnetic layer with an etching solution comprising at least one weakly absorbing acid, a surfactant inhibitor soluble in the at least one weakly absorbing acid, and at least one cation additive, wherein etching of the tunnel barrier layer is substantially prevented. In some embodiments, etching solution comprises at least one perfluoroalkane sulfonic acid, an alkylsulfonate salt soluble in the at least one perfluoroalkane sulfonic acid, and at least one cation additive.

Abstract: A surface treatment solution for finely processing a glass substrate containing multiple ingredients is used for the construction of liquid crystal-based or organic electroluminescence-based flat panel display devices without invoking crystal precipitation and/or increasing surface roughness. An etching solution of the invention contains, in addition to hydrofluoric acid (HF) and ammonium fluoride (NH4F), at least one acid whose dissociation constant is larger than that of HF. The concentration of the acid in the solution can advantageously be adjusted to maximize the etching rate.

Abstract: A method for selectively removing an aluminum-poor overlay coating from a substrate of a component, which as a result of its low aluminum content is highly resistant to a selective stripping solution. The method entails diffusing aluminum into the overlay coating to form an aluminum-infused overlay coating having an increased aluminum level in at least an outer surface thereof. The diffusion step is carried out so that the increased aluminum level is sufficient to render the aluminum-infused overlay coating removable by selective stripping. The outer surface of the aluminum-infused overlay coating is then contacted with an aqueous composition to remove the aluminum-infused overlay coating from the substrate. The aqueous composition includes at least one acid having the formula HxAF6, and/or precursors thereof, wherein A is Si, Ge, Ti, Zr, Al, and/or Ga, and x is from 1 to 6.

Abstract: A system (FIG. 5) and methods for selectively etching silicon nitride in the presence of silicon oxide that provide high selectivity while stabilizing silicon oxide etch rates. The invention comprises a processing chamber (10), dispense lines (20, 21, 22), feed lines (30, 31, 32), a recirculation line (40), a process controller (200), a concentration sensor (50), a particle counter (55), and a bleed line (90). The invention dynamically controls the concentration ratio of the components of the etchant being used and/or dynamically controls the particle count within the etchant during the processing of the at least one substrate. As a result etchant bath life is increased and etching process parameters are more tightly controlled.

Abstract: An etchant composition is provided. The etchant composition includes about 40 to about 65 wt % of phosphoric acid, about 2 to about 5 wt % of nitric acid, about 2 to about 20 wt % of acetic acid, about 0.1 to about 2 wt % of a compound containing phosphate, about 0.1 to about 2 wt % of a compound simultaneously containing an amino group and a carboxyl group, and a remaining weight percent of water for the total weight of the composition.

Abstract: According to the substrate processing method of the invention, a jet of droplets generated from a gas and a heated processing liquid is supplied to the surface of a substrate. A resist stripping liquid to strip off the resist from the surface of the substrate is then supplied to the surface of the substrate.

Abstract: Provided are an integrally injection-molded aluminum/resin article capable of having extremely high adhesion strength and air tightness at the interface between an aluminum shape made of an aluminum alloy and a molded resin integrally bonded to each other by injection molding, retaining excellent adhesion strength and air tightness in harsh environments in terms of temperature, humidity, dust, and the like, and exhibiting excellent durability and heat resistance, and a process for producing the same.

Abstract: A method for producing a ceramic substrate material having a first layer and possibly a further layer is specified. The first layer comprises at least one first component made of a crystalline ceramic material and/or a glass material as a matrix and a second component made of a further crystalline ceramic material, which is provided in the matrix. An etching step is performed, mantle areas of the crystals and/or crystal agglomerates of the second component being etched selectively in the first layer to generate a cavity structure in the first layer. The present invention also relates to a corresponding ceramic substrate material, an antenna or an antenna array, and the use of the ceramic substrate material for an antenna or an antenna array.

Abstract: An inkjet head having an electrostatic actuator and a manufacturing method of the same are disclosed. The inkjet head having an electrostatic actuator, comprising a stator, on which is formed a plurality of comb pattern shaped first protrusion parts and second protrusion parts in both directions, and a rotor consisting of a first component and a second component, the ends of which join with the diaphragm, wherein a third protrusion part is formed on the first component, facing the first protrusion parts and meshing with the first protrusion parts without contact; and a fourth protrusion part is formed on the second component, facing the second protrusion parts and meshing with the second protrusion parts without contact, may decrease the size of the head composition and may increase the electrostatic force so that a large displacement may be obtained with little voltage to increase the ink discharge pressure.

Abstract: A method is provided for the removal of tin or tin alloys from substrates such as the removal of residual tin solder from the molds used in the making of interconnect solder bumps on a wafer or other electronic device. The method is particularly useful for the well-known C4NP interconnect technology and uses an etchant composition comprising cupric ions and HCl. Cupric chloride and cupric sulfate are preferred. A preferred method regenerates cupric ions by bubbling air or oxygen through the etchant solution during the cleaning process.

Abstract: A superhydrophobic polymer fabrication is provided. According to one method for preparing a superhydrophobic polymer fabrication, the superhydrophobic polymer fabrication can be fabricated quickly and easily, and the superhydrophobic surface can be repeatedly imprinted using a template, so that mass production of the superhydrophobic polymer fabrication over a large area can be economically implemented.

Abstract: A substrate treating apparatus for treating substrates with a treating solution having a mixture of a chemical and a diluent.

Abstract: Polishing compositions and methods for removing conductive materials from a substrate surface are provided. The method includes providing a substrate comprising dielectric feature definitions, a barrier material disposed in the feature definitions, and a bulk conductive material disposed on the barrier material in an amount sufficient to fill feature definitions; polishing the substrate to substantially remove the bulk conductive material; polishing a residual conductive material to expose feature definitions, comprising: applying a first voltage for a first time period, wherein the first voltage is less than the critical voltage; and applying a second voltage for a second time period, wherein the second voltage is greater than the critical voltage.

Abstract: In one aspect, a composition is provided which is capable of removing an insulation material which includes at least one of a low-k material and a passivation material. The composition of this aspect includes about 5 to about 40 percent by weight of a fluorine compound, about 0.01 to about 20 percent by weight of a first oxidizing agent, about 10 to about 50 percent by weight of a second oxidizing agent, and a remaining water.

Abstract: There is provided a preferential etching method wherein a preferential etchant which contains at least a hydrofluoric acid whose composition by volume falls within the range of 0.02 to 0.1, a nitric acid whose composition by volume falls within the range of 0.5 to 0.6, an acetic acid whose composition by volume falls within the range of 0.2 to 0.25, and water is used to etch a silicon single crystal substrate whose electrical resistivity is less than 10 m?·cm at a rate higher than 0.1 ?m/min, thereby eliciting BMDs on a surface of the silicon single crystal substrate. As a result, the preferential etching method that can evaluate and utilize characteristics of crystal defects, especially BMDs in an ultralow-resistance silicon single crystal substrate whose electrical resistivity is less than 10 m?·cm, which cannot be readily detected by conventional techniques, by performing preferential etching using a chromeless etchant containing no harmful chrome can be provided.

Abstract: A method of lithography patterning includes forming a first material layer on a substrate; forming a first patterned resist layer including at least one opening therein on the first material layer; forming a second material layer on the first patterned resist layer and the first material layer; forming a second patterned resist layer including at least one opening therein on the second material layer; and etching the first and second material layers uncovered by the first and second patterned resist layers.

Abstract: The present invention is directed to processes for ink jet printing of etchant or modifier materials for creating patterns, particularly for electronics and display applications. The present invention also relates to devices made using the processes.

Abstract: A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The substrate is exposed to a buffered fluoride etch solution which undercuts the silicon to provide lateral shelves when patterned in the <100> direction. The resulting structure includes an undercut feature when patterned in the <100> direction.

Abstract: A method of manufacturing a electrode foil composed of a valve metal layer of a first valve metal and a metal foil of a second valve metal supporting the valve metal layer, the method includes coating fine particles of the first valve metal with a resin to form composite fine particles, forming the composite fine particles into an aerosol, jetting the aerosol to the metal foil in an atmosphere under a reduced pressure, depositing the composite fine particles onto the metal foil to form a aerosol deposition layer, and removing selectively the resin from the aerosol deposition layer to form the valve metal layer.

Abstract: Systematic and effective methodology to clean capacitively coupled plasma reactor electrodes and reduce surface roughness so that the cleaned electrodes meet surface contamination specifications and manufacturing yields are enhanced. Pre-cleaning of tools used in the cleaning process helps prevent contamination of the electrode being cleaned.

Abstract: A process for chemically stripping a metallic coating on an external surface of a substrate without attacking an internal surface defined by an internal passage within the substrate. Processing steps include depositing within the internal passage a thermally-decomposable wax having a melting temperature above 75° C. so as to mask the internal surface of the substrate, and then treating the substrate with an aqueous solution containing an acid having the formula HxAF6 where A is silicon, germanium, titanium, zirconium, aluminum, or gallium, and x has a value of one to six. The aqueous solution is at a temperature below the melting temperature of the wax and substantially removes the metallic coating from the external surface of the substrate, while the wax is substantially unreactive with the aqueous solution and prevents the aqueous solution from contacting the internal surface of the substrate. Thereafter, the substrate is heated to thermally decompose the wax without producing hazardous byproducts.

Abstract: An etchant for patterning composite layer containing copper is provided. The etchant includes peracetic acid being about 5% to 40% by weight and serving as a major component, a peracetic acid stabilizer being about 5% to 15% by weight, an organic acid being about 5% to 10% by weight, an inorganic acid being about 5% to 15% by weight, a salt being about 8% to 15% by weight, which are based on the total weight of the etchant.

Abstract: An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of a wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying the fluorine ion component, and the amounts of the fluorine ion component and acid, component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute.

Abstract: An etching solution which contains hydrogen fluoride (HF) and exhibits an etching rate ratio: etching rate for a boron-glass film (BSG) or boron-phosphorus-glass film (BPSG)/etching rate for a thermally oxidized film (THOX) of 10 or more at 25° C.

Abstract: A slurry composition includes an acidic aqueous solution and one or both of, an amphoteric surfactant and a glycol compound. Examples of the amphoteric surfactant include a betaine compound and an amino acid compound, and examples of the amino acid compound include lysine, proline and arginine. Examples of the glycol compound include diethylene glycol, ethylene glycol and polyethylene glycol.

Abstract: Ophthalmic surgical blades are manufactured from either a single crystal or poly-crystalline material, preferably in the form of a wafer. The method comprises preparing the single crystal or poly-crystalline wafers by mounting them and etching trenches into the wafers using one of several processes. Methods for machining the trenches, which form the bevel blade surfaces, include a diamond blade saw, laser system, ultrasonic machine, a hot forge press and a router. Other processes include wet etching (isotropic and anisotropic) and dry etching (isotropic and anisotropic, including reactive ion etching), and combinations of these etching steps. The wafers are then placed in an etchant solution which isotropically etches the wafers in a uniform manner, such that layers of crystalline or poly-crystalline material are removed uniformly, producing single, double or multiple bevel blades. Nearly any angle can be machined into the wafer, and the machined angle remains after etching.

Abstract: A process for selectively etching a surface of an anodized aluminum article. A preferred process includes: providing an aluminum sheet or web including first and second sides having anodized finishes; etching the first side to improve the adhesion capabilities of that side but not etching the second side so that the second side retains its anodized finish. The anodized aluminum may be colored before etching, thus the second side retains its color after etching. In a more preferred embodiment, sodium hydroxide or phosphoric acid is used to etch the anodized aluminum. Optionally, the etching of the second side is prevented by administering gas or liquid over the second side, masking the second side with a protective film, or shielding the second side with a shield. Further, the gas or liquid administered over the second side may be controlled to increase or decrease the rate of etching on the first side.

Abstract: Compositions and methods are provided for preparing a metal substrate having a uniform textured surface with a plurality of indentations with a diameter in the nanometer and micrometer range. The textured surface is produced by exposing the substrate to an etching fluid comprising a hydrohalic acid and a mixture of a hydrohalic acid and an oxyacid, a chloride containing compound, and an oxidant. The etching solution can be used at ambient temperature. This textured surface enhances adherence of coatings or cells onto the textured surface, improves the retention of proteins on the surface, and encourages bone in-growth.

Abstract: Provided are an etchant, a method for fabricating a wire using the etchant, and a method for fabricating a thin film transistor (TFT) substrate using the etchant. The etchant includes a material having the formula 1, ammonium acetic acid, and the remainder of deionized water, wherein the formula 1 is expressed by: M(OH)XLY??(1) where M indicates Zn, Sn, Cr, Al, Ba, Fe, Ti, Si, or B, X indicates 2 or 3, L indicates H2O, NH3, CN, COR, or NH2R, Y indicates 0, 1, 2, or 3, and R indicates an alkyl group.

Abstract: An etchant for patterning composite layer containing copper is provided. The etchant includes peracetic acid being about 5% to 40% by weight and serving as a major component, a peracetic acid stabilizer being about 5% to 15% by weight, an organic acid being about 5% to 10% by weight, an inorganic acid being about 5% to 15% by weight, a salt being about 8% to 15% by weight, which are based on the total weight of the etchant.

Abstract: The formation of devices in semiconductor material. In one embodiment, a method of forming a semiconductor device is provided. The method comprises forming at least one hard mask overlaying at least one layer of resistive material. Forming at least one opening to a working surface of a silicon substrate of the semiconductor device. Cleaning the semiconductor device with a diluted HF/HCL process. After cleaning with the diluted HF/HCL process, forming a silicide contact junction in the at least one of the opening to the working surface of the silicon substrate and then forming interconnect metal layers.

Abstract: The present invention relates to a method of polishing an implantable medical device. The method may include positioning an implantable medical device on a support. At least a portion of a surface of the implantable medical device may include a polymer. A fluid may be contacted with at least a portion of the surface of the positioned implantable medical device. In an embodiment, the fluid may be capable of dissolving at least a portion of the polymer at or near the surface of the implantable medical device. The method may further include allowing the fluid to modify at least a portion of the surface of the positioned medical device. A majority of the contacted fluid may be removed from the surface of the implantable medical device. In certain embodiments, the modified portion of the surface may be substantially less thrombogenetic and substantially more mechanically stable than an unmodified surface.

Abstract: A method for manufacturing a glass substrate for a magnetic disk comprises mirror surface polishing and cleaning of a glass substrate, wherein polishing agent of which the principal component is rare-earth oxide with content of fluorine 5% by weight or less, is supplied to the glass substrate, the surface of the glass substrate is subjected to mirror surface polishing by relatively moving the polishing cloth and the glass substrate, then this glass substrate is brought into contact with a cleaning solution including ascorbic acid, fluorine ion, and sulfuric acid of 3% by weight or more, and the polishing agent is dissolved and removed. The concentration of the ascorbic acid included in the cleaning solution is 0.1% by weight or more, and the content of the fluorine ion is 1 ppm to 40 ppm. At least a magnetic layer is formed on the obtained glass substrate to manufacture a magnetic disk.

Abstract: A cleaning method and cleaning recipes are disclosed. The present invention relates to a method for cleaning a semiconductor substrate and cleaning recipes. The present invention utilizes a first cleaning solution including diluted hydrofluoric acid and a second cleaning solution including hydrogen chloride and hydrogen peroxide (H2O2) to clean a semiconductor substrate without using an alkaline solution including ammonium hydroxide. Accordingly, a clean surface of a semiconductor substrate is provided in selective epitaxial growth (SEG) process to grow an epitaxial layer with smooth surface.

Abstract: A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The substrate is exposed to a buffered fluoride etch solution which undercuts the silicon to provide lateral shelves when patterned in the <100> direction. The resulting structure includes an undercut feature when patterned in the <100> direction.

Abstract: A process for producing a structure having a porous layer is provided. The process forms the porous layer with high thickness-controllability. The process comprises steps of preparing a layered product having, on a substrate, a first nonporous layer and a second nonporous layer different in constituting material composition from the first layer; anodizing the layered product to form pores in the first nonporous layer and the second nonporous layer; and removing the second nonporous layer having pores formed therein from the layered product.

Abstract: An etchant of the present invention includes an aqueous solution containing hydrochloric acid, nitric acid, and a cupric ion source. An etching method of the present invention includes bringing the etchant into contact with at least one metal selected from nickel, chromium, nickel-chromium alloys, and palladium. Another etching method of the present invention includes bringing a first etchant that includes an aqueous solution containing at least the following components A to C (A. hydrochloric acid; B. at least one compound selected from the following (a) to (c): (a) compounds with 7 or less carbon atoms, containing a sulfur atom(s) and at least one group selected from an amino group, an imino group, a carboxyl group, a carbonyl group, and a hydroxyl group; (b) thiazole; and (c) thiazole compounds; and C.

Abstract: A method for moving resist stripper across the surface of a semiconductor substrate includes applying a wet chemical resist stripper, such as an organic or oxidizing wet chemical resist stripper, to at least a portion of a photomask positioned over the semiconductor substrate. A carrier fluid, such as a gas, is then directed toward the semiconductor substrate so as to move the resist stripper across the substrate. The carrier fluid may be directed toward the substrate as the resist stripper is being applied thereto or following application of the resist stripper. A system for effecting the method is also disclosed.

Abstract: A chemical mechanical polishing aqueous dispersion comprises abrasives (A) containing ceria, an anionic water-soluble polymer (B) and a cationic surfactant (C), wherein the amount of the anionic water-soluble polymer (B) is in the range of 60 to 600 parts by mass based on 100 parts by mass of the abrasives (A) containing ceria, and the amount of the cationic surfactant (C) is in the range of 0.1 to 100 ppm based on the whole amount of the chemical mechanical polishing aqueous dispersion.

Abstract: A method for making a forming structure for use in an apparatus for making formed polymeric film. The method comprises a multiple step process of applying a photoresist polymer to a metal base sheet, curing the polymer, acid etching the portions of the metal base sheet not covered by cured polymer to form a protrusion having an upper surface and a side wall (or walls), washing the base sheet with caustic and repeating the process as necessary, each time covering the upper surface and side wall of the protrusion with cured polymer.

Abstract: A method for removing polymer containing residues from a semiconductor wafer including metal containing features including providing a semiconductor wafer having a process surface including metal containing features said process surface at least partially covered with polymer containing residues; and, subjecting the semiconductor wafer to a series of cleaning steps including sequentially exposing the process surface to at least one primary solvent and at least one intermediate solvent the at least one intermediate solvent comprising an ammonium nitrate containing solution.

Abstract: A thin-film device is fabricated by forming a protective layer and a thin-film device layer one by one on a first substrate and bonding a second substrate on the thin-film device layer via a first adhesive layer or a coating layer and first adhesive layer, removing the first substrate at least in a part thereof by etching with a chemical solution, bonding the protective layer, which covers the thin-film device layer on a side of the first substrate, to a third substrate via a second adhesive layer, and removing the second substrate. The protective layer is formed of at least two layers having resistance to the chemical solution used upon removal of the first substrate.

Abstract: A method of producing a reflector sheet, which method comprises treating an Al alloy sheet to increase the total reflectance of a surface of the sheet for use as a lighting reflector by bringing the sheet into contact with an acid or alkaline fluid that dissolves aluminium metal, said fluid having a viscosity of less than 0.01 Pa·s, under conditions to remove from 10 nm to 2000 nm of metal from the surface, and cutting or forming the treated Al alloy sheet into the shape of a reflector sheet.

Abstract: The invention provides a method of assaying at least one element in a material including silicon. The method includes the steps of decomposing a portion of the material with an etching agent to form a solution containing hexafluorosilicic acid and at least one element to be assayed, heating the solution to a temperature sufficient to transform a substantial portion of the hexafluorosilicic acid into silicon tetrafluoride and to cause at least some of the silicon tetrafluoride to evaporate, such that a solution for assaying is obtained in which the silicon content is reduced while and the elements to be assayed are conserved; and assaying at least one element contained in the solution. The invention is applicable to the field of manufacturing substrates or components for optics, electronics, or optoelectronics, and in particular to the field of quality control.

Abstract: A method of forming a contact hole in a semiconductor device, by which a PMD layer as an insulating interlayer is prevented from being overetched by wet cleaning for removing polymer and photoresist after forming a contact hole perforating the PMD layer in a manner of adjusting temperature and concentration of an NC-2 solution for the wet cleaning. The present invention includes the steps of forming a premetal dielectric layer on a semiconductor substrate, forming a contact hole perforating the premetal dielectric layer, and cleaning the substrate using an NC-2 cleaning solution at a temperature equal to or lower than about 55° C.

Abstract: The aqueous dispersion comprising (A) abrasive grains, (B) at least one compound selected from the group consisting of 2-bromo-2-nitro-1,3-propanediol, 2-bromo-2-nitro-1, 3-butanediol, 2,2-dibromo-2-nitroethanol, and 2,2-dibromo-3-nitrilopropionamide, and (C) an organic component other than the compounds of component (B) is disclosed. The aqueous dispersion has no problem of rotting even if stored or used in a neutral pH region and produces an excellent polished surface with almost no dishing or scratches, when applied particularly to the STI process for manufacturing of semiconductor devices.

Abstract: The present invention sets forth an improved method of microetching a metal substrate by contacting the substrate with an aqueous composition comprising a sodium persulfate or hydrogen peroxide oxidizing agent, acid, and one or more additives. When the oxidizing agent is sodium persulfate, the one or more additives generally comprise an aliphatic saturated dicarboxylic acid. When the oxidizing agent is hydrogen peroxide, the one or more additives generally comprise a stabilizer and amino tris(methylene phosphonic acid).