Abstract: A composition for chemical-mechanical polishing, comprising an aqueous solution and an abrasive that comprises polymer particles, is described. The polymer particles carry an electrical charge, such that nearby particles repel one another. Accordingly, aggregation of polymer particles may be reduced, minimized or eliminated. The composition may additionally comprise an oxidizing agent. A method of using the composition to polish a substrate surface, such as a substrate surface having a metal surface feature or layer, is also described. A substrate so polished may exhibit good surface characteristics, such as a relatively smooth surface or a reduced number of, or a lack of, microscratches on the surface of the substrate.

Abstract: A process for selectively etching a surface of an anodized aluminum article. A preferred process includes: providing an aluminum sheet or web including first and second sides having anodized finishes; etching the first side to improve the adhesion capabilities of that side but not etching the second side so that the second side retains its anodized finish. The anodized aluminum may be colored before etching, thus the second side retains its color after etching. In a more preferred embodiment, sodium hydroxide or phosphoric acid is used to etch the anodized aluminum. Optionally, the etching of the second side is prevented by administering gas or liquid over the second side, masking the second side with a protective film, or shielding the second side with a shield. Further, the gas or liquid administered over the second side may be controlled to increase or decrease the rate of etching on the first side.

Abstract: A method for selectively removing an aluminide coating from at least one surface of a metal-based substrate by: (a) contacting the surface of the substrate with at least one stripping composition comprising nitric acid at a temperature less than about 20° C. to degrade the coating without damaging the substrate; and (b) removing the degraded coating without damaging the substrate. Also disclosed is a method for replacing a worn or damaged aluminide coating on at least one surface of a metal-based substrate by selectively removing the coating using the above steps, and then applying a new aluminide coating to the surface of the substrate. Turbine engine parts, such as high-pressure turbine blades, treated using the above methods are also disclosed.

Abstract: A two-step method of releasing microelectromechanical devices from a substrate is disclosed. The first step comprises isotropically etching a silicon oxide layer sandwiched between two silicon-containing layers with a gaseous hydrogen fluoride-water mixture, the overlying silicon layer to be separated from the underlying silicon layer or substrate for a time sufficient to form an opening but not to release the overlying layer, and the second step comprises adding a drying agent to substitute for moisture remaining in the opening and to dissolve away any residues in the opening that can cause stiction.

Abstract: A polishing composition comprising an abrasive, water and an organic acid or a salt thereof, wherein the composition has a specified viscosity of from 1.0 to 2.0 mPa·s at a shearing rate of 1500 s?1 and 25° C.; a roll-off reducing agent comprising a Brönsted acid or a salt thereof, having an action of lowering viscosity so that the amount of viscosity lowered is 0.01 mPa·s or more, wherein the amount of viscosity lowered is expressed by the following equation: (Amount of Viscosity Lowered)=(Viscosity of Standard Polishing Composition)?(Viscosity of Roll-Off Reducing Agent-Containing Polishing Composition), wherein the standard polishing composition is prepared which comprises 20 parts by weight of an abrasive, said abrasive being high-purity alumina having Al2O3 purity of 98.

Abstract: Photoelectrochemical (PEC) etching is restricted to a group III nitride semiconductor-barrier interface to laterally etch or undercut the target group III nitride. The barrier interface is provided by the transparent sapphire substrate on which the target group III nitride is epitaxially grown or by a layer of material in intimate contact with the target group III nitride material and having a bandgap sufficiently high to make it resistant to PEC etching. Due to the first orientation in which this effect was first observed, it has been named backside-Illuminated photoelectrochemical (BIPEC) etching. It refers to a preferential etching at the semiconductor-barrier layer interface. The assembly can be exposed to light from any direction to effectuate bandgap-selective PEC etching. An opaque mask can be applied to limit the lateral extent of the photoelectrochemical etching.

Abstract: The ceramic member of this invention is formed on the surfaces of crystal grains with a plurality of protrusions having smaller diameter than that of the crystal grain, said crystal grain composing at least the surface or its vicinity of a dense ceramic base material of purity being 95 wt % or higher. Such ceramic members may be produced by performing the surface of a dense ceramic base material with a corrosion treatment in an acid etchant, the dense ceramic base material having purity of 95 wt % or higher and exceeding 90% of a theoretical density, whereby ceramic grains existing on the surface or its vicinity of the base material are formed on the surface thereof with a plurality of protrusions.

Abstract: Disclosed is a method of manufacturing a semiconductor device. First, a silicidation blocking layer is formed on a semiconductor substrate by a plasma enhanced chemical vapor deposition process. Next, the silicidation blocking layer in a region in which a metal silicide contact is to be formed is removed by a wet etching process. Next, after a metal layer is formed on the resultant, the silicon in the region and the metal of the metal layer are reacted to form the metal silicide. Since the silicidation blocking layer consisting of PE-SiON is formed at a low temperature of less than 400 Celsius Degrees, it is possible to prevent diffusion and redistribution of impurities in gate and source/drain regions of a transistor during the deposition of the silicidation blocking layer.

Abstract: The removal of defect particles that may be created during polysilicon hard mask etching, and that are embedded within the polysilicon layer, is disclosed. Oxide is first grown in the polysilicon layer exposed through the patterned hard mask layer, so that the defect particle becomes embedded within the oxide. Oxide growth may be accomplished by rapid thermal oxidation (RTO). The oxide is then exposed to an acidic solution, such as hydrofluoric (HF) acid, to remove the oxide and the embedded defect particle embedded therein.

Abstract: A method for removing metal cladding adhered to an airfoil, such as a turbine blade, wherein the airfoil comprises a substrate and wherein at least a portion of the cladding is adhered to at least one surface of the substrate of the airfoil. In this method the cladding is treated with a chemical etchant of the metal that the cladding is made of for a period of time sufficient to remove at least the portion of the cladding adhered to the at least one surface of the substrate. The substrate is made of a material that is chemically resistant to the etchant.

Abstract: Substantially transparent electrodes are formed on a substrate by a process including forming on the substrate, in order, a bottom high index layer, a metallic conductive layer, and a top high index layer with a conductivity of at least about 400 ?/square; and chemically etching the bottom high index layer, the top high index layer and the conductive layer to form discrete electrodes in the metallic conductive layer.

Abstract: A method of surface treatment of friction members includes providing a friction member made of PMMC material. A transfer layer is formed on the active surface of the friction member of removing the top layer of the matrix material to expose a surface with the embedded reinforcing particles.

Abstract: A polishing composition for a substrate for a magnetic disk, which comprises: (a) a polishing accelerator composed of at least one compound selected from the group consisting of malic acid, glycolic acid, succinic acid, citric acid, maleic acid, itaconic acid, malonic acid, iminodiacetic acid, gluconic acid, lactic acid, mandelic acid, crotonic acid, nicotinic acid, aluminum nitrate, aluminum sulfate and iron(III) nitrate, (b) an edge sagging preventive agent composed of at least one compound selected from the group consisting of a polyvinylpyrrolidone, a polyoxyethylene sorbitan fatty acid ester and a polyoxyethylene sorbit fatty acid ester, (c) at least one abrasive selected from the group consisting of aluminum oxide, silicon dioxide, cerium oxide, zirconium oxide, titanium oxide and silicon carbide, and (d) water.

Abstract: A method for forming a metal silicide layer in a self-aligned manner on a source region and a drain region and a gate electrode of a semiconductor device formed on a semiconductor substrate, the method comprising the steps of: depositing a cobalt film over an entire surface of the semiconductor device formed on the semiconductor substrate, forming the metal silicide layer on the source region and drain region and the gate electrode by performing a heat treating thereof, and etching away an unreacted cobalt remaining on the semiconductor substrate using an admixture solution made of hydrochloric acid, hydrogen peroxide, and water, having relative concentration ratio ranging from 1:1:5 to 3:1:5, at a solution temperature of 25 to 45° C., with an etching time of 1 to 20 minutes.

Abstract: Described is a polishing technique adapted for multilevel metallization of an electronic circuit device, which comprises polishing a metal film with a polishing liquid containing an oxidizing substance, a phosphoric acid and a protection-layer forming agent. The present invention makes it possible to polishing a metal film at a high removal rate while suppressing occurrence of scratches, delamination, dishing or erosion.

Abstract: A device and process for the wet-chemical treatment of silicon using an etching liquid that contains water, nitric acid and hydrofluoric acid. The etching liquid is activated by introducing nitrogen oxide (NOx) into the etching liquid, before being used for the wet-chemical treatment of silicon. The device consists of a first vessel in which silicon is subjected to a wet-chemical treatment with the aid of an etching liquid, a second vessel in which fresh etching liquid is held ready, and a connecting line between the first vessel and the second vessel, through which nitrogen oxides (NOx) formed in the first vessel during the wet-chemical treatment are passed to the second vessel.

Abstract: The removal of defect particles that may be created during polysilicon hard mask etching, and that are embedded within the polysilicon layer, is disclosed. Oxide is first grown in the polysilicon layer exposed through the patterned hard mask layer, so that the defect particle becomes embedded within the oxide. Oxide growth may be accomplished by rapid thermal oxidation (RTO). The oxide is then exposed to an acidic solution, such as hydrofluoric (HF) acid, to remove the oxide and the embedded defect particle embedded therein.

Abstract: Non-chromate solutions for treating and/or etching metals, particularly, aluminum,.aluminum alloys, steel and titanium, and method of applying same wherein the solutions include either a titanate or titanium dioxide as a “drop-in replacement” for a chromium-containing compound in a metal surface etching solution that otherwise would contain chromium.

Abstract: In a method of treating substrates a treatment fluid is fed into a collection vessel after treatment, at least a portion of the treatment fluid is withdrawn from the collection vessel and returned to respective reservoir and the collection vessel is rinsed before receiving another treatment fluid.

Abstract: In a process for producing an aluminum support of a lithographic printing plate, the desired aluminum support is produced by imparting fine asperities to an aluminum plate and then roughening it electrochemically in an acidic aqueous solution. The roughened aluminum plate may be electropolished or chemically etched.

Abstract: A liquid etchant and a method for roughening a copper surface each capable of providing copper with a roughened surface increased in acid resistance regardless of a chlorine ion in a short period of time, to thereby ensure firm adhesion between a copper conductive pattern and an outer layer material during manufacturing of a printed circuit board, resulting in the manufacturing being highly simplified. The liquid etchant includes a main component containing an oxo acid such as sulfuric acid and a peroxide such as hydrogen peroxide. Also, the liquid etchant includes an auxiliary component containing a tetrazole such as 5-aminotetrazole or the like, or a 1,2,3-azole. The liquid etchant permits a copper surface to be roughened in an acicular manner.

Abstract: A method of rinsing an electronic substrate recognizes that adding a buffer to a rinsing fluid eliminates fluctuations in the amount of residues on an electronic substrate, and a buffered rinsing fluid is prepared by (a) providing water from a water source; (b) deionizing the water to produce deionized water; (c) adding a buffer to the deionized water at a concentration effective to eliminate fluctuations in the amount of residues on the electronic substrate. The electronic substrate is rinsed with the buffered rinsing fluid.

Abstract: The weight and thickness reduction of a display panel can be realized without reducing the substrate size and lowering the productivity. To produce a display panel, there are performed a panel producing step for manufacturing a display panel using substrates each having a predetermined wall thickness; and a chemical treatment step for immersing the display panel into a chemical solution and removing a fixed amount of the surface of the substrates by a chemical reaction so as to reduce the wall thickness, wherein in the panel producing step, the display panel is produced by forming an electroluminescence element on one substrate having a predetermined thickness, and in the chemical treatment step, the display panel is immersed into the chemical solution while the electroluminescence element is protected.

Abstract: A method of manufacturing a glass substrate for displays is provided, which allows efficient and inexpensive removal of at least a reducing heterogeneous layer formed on the top surface of the glass substrate, and a glass substrate for displays manufactured by the same method. A glass substrate is prepared by the float method. The reducing heterogeneous layer formed on the top surface of the glass substrate is removed by etching using an etchant which is mainly composed of hydrofluoric acid.

Abstract: A method of preparing a silicon surface for a subsequent processing said such as thermal oxidation, or metal silicide formation, via use of a novel wet chemical clean procedure, has been developed. The novel wet chemical clean procedure is comprised of three specific stages, with the first stage featuring the removal of organic contaminants and the growth of a native oxide layer on the silicon surface. A second stage features removal of the native oxide layer and removal of metallic contaminants from the silicon surface, while the third stage is used to dry the silicon surface. The novel wet chemical clean procedure is performed in less time, and using less chemicals, then counterpart wet chemical cleans also used for the preparation of silicon surfaces for subsequent processing steps.

Abstract: A method of manufacturing an electronic device comprises forming a wiring material layer made of aluminum or an aluminum alloy on the surface of an insulating film on a substrate, patterning the wiring material layer by a reactive ion etching treatment with a resist pattern used as a mask so as to form a wiring, and treating the surface of the insulating film including the wiring with an aqueous solution for removing the etching residue, the aqueous solution containing a peroxosulfate, a fluorine-containing compound and an acid for adjusting the pH value and having a pH value of −1 to 3.

Abstract: This invention provides a process for treating a workpiece having a front side, a back side, and an outer perimeter. In accordance with the process, a processing fluid is selectively applied or excluded from an outer peripheral margin of at least one of the front or back sides or the workpiece. Exclusion and/or application of the processing fluid occurs by applying one or more processing fluids to the workpiece as the workpiece and corresponding reactor are spinning about an axis of rotation that is generally orthogonal to the center of the face of the workpiece being processed. The flow rate of the one or more processing fluids, fluid pressure, and/or spin rate are used to control the extent to which the processing fluid is selectively applied or excluded from the outer peripheral margin.

Abstract: A composition for removing side wall which includes an aqueous solution containing both nitric acid and at least one of carboxylic acids selected from the group consisting of polycarboxylic acid, aminocarboxylic acid, and salts thereof; a method of removing side wall; and a process for producing a semiconductor device. Use of the composition is effective in removing side wall at a low temperature in a short time in semiconductor device production without corroding the wiring material, e.g., an aluminium alloy. Thus, a semiconductor device having an aluminium alloy wiring which has undergone substantially no corrosion can be efficiently produced.

Abstract: A lead-containing copper-based alloy is immersed into a weak acidic or neutral etching solution having a buffer effect which is formed by adding an organic acid into a complexing agent having a high ability to form a complexing ion with lead, and lead particles present on the surface of the lead-containing copper-based alloy are then removed. The complexing agent is one of an organic ammonium salt such as ammonium acetate, or ammonium citrate, or may be an organic sodium salt such as sodium acetate, sodium tartrate, and sodium citrate. Preferably, an immersion temperature of the alloy to the etching solution falls within a range of from 10 to 50° C. The etching solution is agitated with oxygen or a gas containing oxygen blown thereinto during the immersion of the alloy into the etching solution. An extremely low voltage of −0.3 to +0.2 V vs. NHE is applied from outside to the lead-containing copper-based alloy as an anode.

Abstract: Disclosed is a production method of an aluminum support for a lithographic printing plate, capable of stable and low-cost production of an aluminum support for a lithographic printing plate, the support being scarcely subject to generation of treatment unevenness called streaks or grainy unevenness ascribable to the different in the aluminum dissolving rate due to the difference in the orientation of the crystal grain. The aluminum support is produced by surface graining and then polishing an aluminum plate or by polishing an aluminum plate while etching it in an aqueous acid or alkali solution. The aluminum plate may be subjected to polishing and then to anodization or may be subjected to polishing, to surface graining, again to or not to polishing and then to anodization. A production method for producing a high-quality support for a lithographic printing plate, free of local unevenness is also disclosed.

Abstract: The invention includes a method of cleaning a surface of a copper-containing material by exposing the surface to an acidic mixture comprising NO3−, F− and one or more organic acid anions having carboxylate groups. The invention also includes a semiconductor processing method of forming an opening to a copper-containing material. A mass is formed over a copper-containing material within an opening in a substrate. The mass contains at least one of an oxide barrier material and a dielectric material. A second opening is etched through the mass into the copper-containing material to form a base surface of the copper-containing material that is at least partially covered by particles comprising at least one of a copper oxide, a silicon oxide or a copper fluoride. The base surface is cleaned with a solution comprising nitric acid, hydrofluoric acid and one or more organic acids to remove at least some of the particles.

Abstract: Disclosed is a method for manufacturing a catalytic oxide anode using high temperature sintering, which can increase a decomposition efficiency of an organic substance by improving a performance of the catalytic oxide anode (Ru oxide anode, Ir oxide anode) used in a water treatment, and in particular, to a method for manufacturing a catalytic oxide anode, in which the oxide anode is sintered at 600° C. or higher, and a TiO2-screening layer is formed between a titanium base metal and a catalytic oxide layer to prevent a lowering of the oxide anode activity owing to an oxidation of the titanium base metal caused by sintering the oxide anode at high temperature and a solid diffusion of an oxide into an anode surface.

Abstract: A method of manufacturing a glass substrate for a magnetic disk. The method includes the step of scrub-etching the glass substrate using a pad in the presence of an acid treatment solution. As the acid treatment solution, hydrofluoric acid is used in a range of 0.01 to 1 wt %. The scrub-etching step is performed at temperatures ranging from 5 to 60° C. for 1 second to 300 seconds. The method produces a substrate that is substantially free of asperity.

Abstract: A method of forming a nano-supported sponge catalyst (10) on a substrate (12) is comprised of depositing an active catalytic metallic element (16) on the substrate (12) and depositing a structural metallic element (18) with the active catalytic metallic element (16) to form a mixed metal alloy layer (14). The method is further comprised of etching the mixed metal alloy layer (14) with an etchant to oxidize the active catalytic metallic element (16) and the structural metallic element (18) and to remove at least a portion of the structural metallic element (18) from a first sub-layer of the mixed metal alloy layer (14). The first sub-layer of the mixed metal alloy layer (14) is porous and comprised of nano-particles of the active catalytic metallic element (16) that are supported by a metal oxide structure derived from the structural metallic element (18).

Abstract: There is provided an aqueous dispersion for CMP with an excellent balance between chemical etching and mechanical polishing performance. The aqueous dispersion for CMP of the invention is characterized by comprising an abrasive, water and a heteropolyacid. Another aqueous dispersion for CMP according to the invention is characterized by comprising an abrasive, water, a heteropolyacid and an organic acid. Yet another aqueous dispersion for CMP according to the invention is characterized by comprising colloidal silica with a primary particle size of 5-100 nm, water and a heteropolyacid. Preferred for the heteropolyacid is at least one type selected from among silicomolybdic acid, phosphorotungstic acid, silicotungstic acid, phosphoromolybdic acid and silicotungstomolybdic acid. Preferred for the organic acid is at least one selected from among oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, maleic acid, fumaric acid, phthalic acid, malic acid, tartaric acid and citric acid.

Abstract: Provided is a method for recovering a slip resistance value of a basalt-tiled road surface by treating with an acid solution.

Abstract: A simple surface treatment process is provided which offers a high performance surface for a variety of applications at low cost. This novel surface treatment, which is particularly useful for Ti-6Al-4V alloys, is achieved by forming oxides on the surface with a two-step chemical process and without mechanical abrasion. First, after solvent degreasing, sulfuric acid is used to generate a fresh titanium surface. Next, an alkaline perborate solution is used to form an oxide on the surface. This acid-followed-by-base treatment is cost effective and relatively safe to use in commercial applications. In addition, it is chromium-free, and has been successfully used with a sol-gel coating to afford a strong adhesive bond that exhibits excellent durability after the bonded specimens have been subjected to a harsh 72 hour water boil immersion. Phenylethynyl containing adhesives were used to evaluate this surface treatment with a novel coupling agent containing both trialkoxysilane and phenylethynyl groups.

Abstract: The ceramic member of this invention is formed on the surfaces of crystal grains with a plurality of protrusions having smaller diameter than that of the crystal grain, said crystal grain composing at least the surface or its vicinity of a dense ceramic base material of purity being 95 wt % or higher. Such ceramic members may be produced by performing the surface of a dense ceramic base material with a corrosion treatment in an acid etchant, the dense ceramic base material having purity of 95 wt % or higher and exceeding 90% of a theoretical density, whereby ceramic grains existing on the surface or its vicinity of the base material are formed on the surface thereof with a plurality of protrusions.

Abstract: To provide a polishing composition which enables maintenance of excellent properties and high quality of the surface of a hard disk without lowering polishing rate during polishing of the surface, and which can provide a polished surface in which the amount of dub-off is considerably reduced as compared with that of a conventional level, a polishing composition containing water, a polishing material (particularly alumina), a polishing accelerator, and at least one of hydroxypropyl cellulose and hydroxyalkyl alkyl cellulose is provided.

Abstract: The present invention provides an improved finishing process and apparatus. In one embodiment, a method and apparatus are provided for finishing a metal article. The method includes cavitationally eroding the metal article to form pits in its external surface. The metal article is also corroded with a corrosion chemical to corrode the pitted metallic surface. In this manner, substantially homogeneously distributed micro-pits can be formed about the article to create a desired matte finish, as well as a surface that is amenable for sealing. In a preferred embodiment, the corrosion chemical is part of a finishing bath that is ultrasonically cavitated for eroding the metal article.

Abstract: A method of planarizing or polishing the surface of a memory or rigid disk comprising abrading at least a portion of the surface with (i) a polishing composition comprising an oxidizing agent selected from the group consisting of persulfates and peroxides, an amino acid, and water, and (ii) an abrasive.

Abstract: In a method of fabricating a substrate, a substrate is submerged into a chemical bath so that the thickness of the substrate changes. The temperature of the chemical bath is monitored to ascertain a change in the thickness of the substrate.

Abstract: A polishing composition comprising silica particles, water, and Fe salt and/or Al salt of a polyaminocarboxylic acid; a polishing process comprising applying the polishing composition; a process for manufacturing a magnetic disk substrate, comprising the step of polishing a substrate with the polishing composition; a magnetic disk substrate manufactured by applying the polishing composition.

Abstract: Metal surfaces, particularly copper surfaces, which are oxidatively micro-etched to increase surface area through the use of molybdenum. The micro-etch solutions contain a proton source, e.g., a mineral acid, an oxidizer agent, e.g., hydrogen peroxide, an azole compound, and a molybdenum source. These micro-etched surfaces can further be rendered acid-resistant by exposure to a thiazole compound and/or a thiocarbamide compound. The thiazole compound and/or thiocarbamide compound may be provided either in the oxidative micro-etching solution or provided in a post-micro-etching solution.

Abstract: A method of manufacturing electronic components includes disposing a top metal layer (502) comprised of solder over a bottom metal layer (201, 202) comprised of titanium or tungsten, and selectively etching the bottom metal layer (201, 202) over the top metal layer (502) with an etchant mixture (601) comprised of an etchant, an additive to control the temperature of the etchant mixture (601), and another additive to reduce the redeposition of the top layer (502).

Abstract: A method for separating layers from articles made of high-speed steel and having at least one layer of TiAlN, includes applying an alkaline solution containing hydrogen peroxide, a base as well as acid to the layer. The acid is selected from phosphates, phosphonates and phosphonic acids.

Abstract: The present invention relates to a method of forming an electrode for a thin film transistor, which forms an electrode of a double-layered structure consisting of first and second metal layers by carrying out two steps of etching the metal layers by means of varying the diluted density of an etching solution, preventing hillock and junction spiking as well as controlling the generation of undercutting. The method includes the steps of forming a first and second metal layer on a substrate successively, forming a photoresist pattern on a predetermined portion of the second metal layer, etching the second metal layer to expose the first metal layer with a dense mixed solution of (H3PO4O+HNO3+CH3COOH+H2O), using the photoresist pattern as an etch mask, etching the exposed first metal layer with a diluted mixed solution of (H3PO4O+HNO3+CH3COOH+H2O), using the photoresist pattern as an etch mask, and removing the photoresist pattern.

Abstract: A process for selectively etching a surface of an anodized aluminum article. A preferred process includes: providing an aluminum sheet or web including first and second sides having anodized finishes; etching the first side to improve the adhesion capabilities of that side but not etching the second side so that the second side retains its anodized finish. The anodized aluminum may be colored before etching, thus the second side retains its color after etching. In a more preferred embodiment, sodium hydroxide or phosphoric acid is used to etch the anodized aluminum. Optionally, the etching of the second side is prevented by administering gas or liquid over the second side, masking the second side with a protective film, or shielding the second side with a shield. Further, the gas or liquid administered over the second side may be controlled to increase or decrease the rate of etching on the first side.

Abstract: A method of forming a pattern, which comprises forming a first resist film on a surface of a substrate, patterning the first resist film to form a first resist pattern, and forming a covering layer containing silicon or a metal on the first resist pattern by making use of a coating method using a solution containing a solvent which is incapable of dissolving the first resist.

Abstract: The present invention is to provide a hydrophilic treating method of the surface of metal comprising, the first process which treat the surface of metal with a chemical conversion solution to form a chemical conversion film on the metal surface while etching the metal surface and the second process which remove said film formed on the surface of metal to obtain rougher surface, and the final process which forms a hydrophilic film on the surface of metal. Desirably the surface roughness indicated by Rz after above mentioned second process is rougher than 1.5 &mgr;m.