Abstract: A template for imprint lithography can include a body. The body can include a base surface and have a recession extending from the base surface lying along a base plane, the recession including a main portion having a tapered sidewall. In a particular embodiment, the recession includes an intermediate portion having an intermediate sidewall. The intermediate sidewall is rounded or at least part of the intermediate sidewall lies at a different angle as compared to an average tapered angle of the main portion. In another aspect, a method of fabricating a semiconductor device can include forming a patterned resist layer having a tapered sidewall over a substrate having device layers; patterning the device layers using the patterned resist layer; and etching portions of at least some of device layers to expose lateral portions of the at least some device layers. The template is well suited for forming 3D memory arrays.

Abstract: A bonded body of the present invention includes a ceramic member formed of ceramics and a Cu member formed of Cu or a Cu alloy. In a bonding layer formed between the ceramic member and the Cu member, an area ratio of a Cu3P phase in a region extending by up to 50 ?m toward the Cu member side from a bonding surface of the ceramic member is equal to or lower than 15%.

Abstract: An etchant composition for wet etching a titanium-containing film. The etchant composition includes hydrofluoric acid as a primary oxidant, a co-oxidant that forms a dense oxide film on a surface of a titanium film during an etching process, an alkali metal salt that inhibits aggregation and adsorption of titanium ions during the etching process, and a solvent.

Abstract: The present strain gauge includes a substrate having flexibility; a resistor formed from a material containing at least one of chromium and nickel, on the substrate; and an oxidation impeding layer formed on a non-oxidized surface corresponding to an upper surface of the resistor.

Abstract: A method of manufacturing an optoelectronic component includes: A) providing a substrate, B) providing a metallic liquid arranged in a structured manner and in direct mechanical contact on the substrate and including at least one first metal, C) providing semiconductor chips each having a metallic termination layer on their rear side, the metallic termination layer including at least one second metal different from the first metal, and D) self-organized arranging the semiconductor chips on the metallic liquid so that the first metal and the second metal form at least one intermetallic compound having a higher re-melting temperature than the melting temperature of the metallic liquid, wherein the intermetallic compound is a connecting layer between the substrate and the semiconductor chips.

Abstract: Provided is a bonding method for directly bonding an electrode part of a chip component to a bonding part provided on a substrate that is a bonding target, the method comprising: a step for placing the substrate on a stage inside a liquid vessel; a step for injecting liquid into the liquid vessel; and a step for bonding the electrode part of the chip component to the bonding part (electrode part) of the bonding target by superimposing the chip component held by a bonding head in the liquid stored in the liquid vessel over the bonding target and then applying pressure thereto.

Abstract: After a copper plate 14 is bonded to at least one surface of a ceramic substrate 10 via an active metal containing brazing filler metal 12 which contains silver, the unnecessary portion of the copper plat 14 and active metal containing brazing filler metal 12 is removed, and thereafter, an unnecessary portion of the copper plate 14 is removed by chemical polishing so as to cause the active metal containing brazing filler metal 12 to protrude from the side face portion of the copper plate 14, and then, a silver layer 18 adhered to the surface of the copper plate 14 by the chemical polishing is removed.

Abstract: The present invention is directed to a composition for the conditioning of a dental mineralized surface and/or a dental implant and/or for increasing the hydrophilicity of a dental implant having a metal containing surface. The composition comprises EDTA in a concentration of about 21-55% by weight and hydrogen peroxide at a concentration of about 2-4% by weight. The composition of the invention may be used for the conditioning of mineralized dental surfaces and dental implant surfaces in order to remove e.g. biofilm, debris, bacteria, bacterial toxins etc and/or for increasing the hydrophilicity of an implant having a metal containing surface. The invention is also directed to a kit comprising the composition of the invention and a device to apply the composition to a surface in need of conditioning.

Abstract: A heater assembly used in chromatography includes a thermally conductive base having a chamber extending fully through the base with an opening at a first side of the base and at a second side of the base, and a cavity with an opening at the second side of the base. A heater is disposed within the cavity in thermal communication with the base. A thermistor assembly, having a thermistor within a thermally conductive body is disposed within the chamber. The body has a head region with a planar surface. The planar surface of the head region is exposed at the opening of the chamber at the first side of the base for making thermally conductive contact therewith. The thermistor assembly is thermally isolated from the base.

Abstract: A multilayer seed pattern inductor includes a magnetic body and an internal coil part. The magnetic body contains a magnetic material. The internal coil part is embedded in the magnetic body and includes connected coil conductors disposed on two opposing surfaces of an insulating substrate. Each of the coil conductors includes a seed pattern formed of at least two layers, a surface coating layer covering the seed pattern, and an upper plating layer formed on an upper surface of the surface coating layer.

Abstract: There is a formulation and a method for inhibiting carbon-based deposits on metal substrate. The method comprises the use of a formulation comprising at least one oxidizing agent and at least one etchant capable of forming free metal ions from the metal substrate, at least one sequestering agent having a ligand capable of forming a complex with the free metal ions and at least one chelating agent having a ligand capable of complexing with at least one surface metal atom.

Abstract: The invention is a process of repairing cracked or microstructurally damaged portions of irradiated materials, such as nuclear reactor pressure vessels and shrouds. A damaged portion of the irradiated substrate is first removed, such as by electrical discharge machining (EDM). After removing the damaged portion, the recast layer inherent in the EDM process is then removed. Once the repair area substrate material has been removed to a calculated depth, the created cavity is then filled without releasing transmutated elements within the irradiated material. A chamber may be placed on the irradiated material surrounding the repair area to create an isolated work space.

Abstract: Metal hydride batteries comprising an electrolyte composition which comprises an aqueous solution comprising potassium hydroxide (KOH) and one or more halide and/or oxyacid salts exhibit reduced degradation of the anode material during operation. The salts are for instance alkali metal salts. Anode materials exhibit for instance <100 % of the degradation of the same anode material in the same battery when replacing the electrolyte composition with 30 weight percent (wt %) aqueous KOH and the conductivity of the electrolyte composition is for instance ?85 % of 30 wt % aqueous KOH. Anode materials are for example ABx high capacity hydrogen storage alloys comprising Mg where x is from about 0.5 to about 5 and which has a discharge capacity of ?400 mAh/g.

Abstract: There is provided a method for producing a metal-plated stainless material, the method including performing an acid treatment of treating a stainless steel material with an acidic solution; performing an etching of treating the stainless steel material after the acid treatment with an etching treatment agent; and a modifying the surface of the stainless steel material after the etching into a state suitable for a metal plating process.

Abstract: After a wet blasting treatment for jetting a slurry, which contains spherical alumina as abrasive grains in a liquid, to the surface of a ceramic substrate 10 of aluminum nitride sintered body so that the ceramic substrate 10 has a residual stress of not higher than ?50 MPa and so that the surface of the ceramic substrate 10 to be bonded to the metal plate 14 has an arithmetic average roughness Ra of 0.15 to 0.30 ?m, a ten-point average roughness Rz of 0.7 to 1.1 ?m and a maximum height Ry of 0.9 to 1.

Abstract: The present invention is directed to a composition for the conditioning of a dental mineralized surface and/or a dental implant and/or for increasing the hydrophilicity of a dental implant having a metal containing surface. The composition comprises EDTA in a concentration of 21-55% by weight and having a pH of 9.0 or above. The high pH of the composition allows more EDTA to be dissolved and the composition is useful for the conditioning of mineralized dental surfaces and/or surfaces of dental implants. The composition of the invention may thus be used for the conditioning of mineralized dental surfaces and dental implant surfaces in order to remove e.g. biofilm, debris, bacteria, bacterial toxins etc and/or for increasing the hydrophilicity of an implant having a metallic surface. The invention is also directed to a kit comprising the composition of the invention and a device to apply the composition to a surface in need of conditioning.

Abstract: The present invention discloses a process for electroless plating of a metal or metal alloy onto copper features of an electronic device such as a printed circuit board which suppresses undesired skip plating and extraneous plating. The process comprises the steps i) providing such a substrate, ii) activating of the copper features with noble metal ions; iii) removing excessive noble metal ions or precipitates formed thereof with an aqueous pre-treatment composition comprising an acid, a source for halide ions and an additive selected from the group consisting of thiourea, thiourea derivatives and polymers comprising thiourea groups, and iv) electroless plating of a metal or metal alloy layer.

Abstract: Methods for selectively depositing different materials at different locations on a substrate are provided. A selective deposition process may form different materials on different surfaces, e.g., different portions of the substrate, depending on the material properties of the underlying layer being deposited on. Ion implantation processes may be used to modify materials disposed on the substrate. The ions modify surface properties of the substrate to enable the subsequent selective deposition process. A substrate having a mask disposed thereon may be subjected to an on implantation process to modify the mask and surfaces of the substrate exposed by the mask. The mask may be removed which results in a substrate having regions of implanted and non-implanted materials. A subsequent deposition process may be performed to selectively deposit on either the implanted or non-implanted regions of the substrate.

Abstract: System and method for thermal management in a multi-chip packaged device. A microelectronic unit is disclosed, and includes a semiconductor element having atop surface and a bottom surface remote from the top surface. A semiconductor device including active elements is located adjacent to the top surface. Operation of the semiconductor device generates heat. Additionally, one or more first blind vias extend from the bottom surface and partially into a thickness of the semiconductor element. In that manner, the blind via does not contact or extend to the semiconductor device (defined as active regions of the semiconductor element, and moreover, is electrically isolated from the semiconductor device. A thermally conductive material fills the one or more first blind vias for heat dissipation.

Abstract: It is an object to manufacture a composite of a metal part and a resin composition part, which is improved so as to securely join and integrate stainless steel and a resin. A stainless steel part whose surface has been suitably roughened by chemical etching or the like can be used. An integrated product is obtained by inserting a stainless steel piece 1 with its surface treated into a cavity formed by a movable-side mold plate 2 and a fixed-side mold plate 3 of a metallic mold for injection molding 10 and injecting a specific resin. PBT, PPS or an aromatic polyamide resin can be used as the main resin component of a resin composition 4 that is used. High injection joining strength is obtained if the resin composition contains, as an auxiliary component, PET and/or a polyolefin resin in the case of PBT, a polyolefin resin in the case of PPS and an aliphatic polyamide resin in the case of an aromatic polyamide resin.

Abstract: This power module substrate includes a copper plate that is formed of copper or a copper alloy and is laminated on a surface of a ceramic substrate 11; a nitride layer 31 that is formed on the surface of the ceramic substrate 11 between the copper plate and the ceramic substrate 11; and an Ag—Cu eutectic structure layer 32 having a thickness of 15 ?m or less that is formed between the nitride layer and the copper plate.

Abstract: The present invention provides a liquid composition used for etching a copper- and titanium-containing multilayer film, a method for etching a copper- and titanium-containing multilayer film by using said liquid composition, a method for manufacturing multilayer-film wiring according to said etching method, and a substrate provided with multilayer-film wiring manufactured according to said manufacturing method. According to the present invention, a liquid composition comprising (A) a maleic acid ion source, (B) a copper ion source and (C) a fluoride ion source and having the pH value of 0-7 is used.

Abstract: The invention relates to a method for the processing of metal scrap, in particular steel scrap, wherein the metal scrap material is treated with at least one fluid with a view to removing surface coatings before a spectroscopic analysis of the metal scrap composition is performed. On the basis of this composition the metal scrap can then be sorted and further processed in a purposeful manner. Moreover, the fluid used for the removal of the surface coatings can be suitably treated to recover the metal constituents contained therein. On the one hand, a resource-conserving and economic recovery of metals, in particular zinc, contained in surface coatings is achieved by means of the inventive method and, what is more, the method also enables a purposeful sorting of metal scrap material to be performed for a variety of uses in the iron and steel producing industry.

Abstract: A process for etching excess tin or tin alloy deposits including the steps of providing a substrate having recessed structures filled with tin or a tin alloy and an excess layer of tin or tin alloy, providing an aqueous etching solution consisting of a source of hydroxide ions and a nitro-substituted aromatic sulfonic acid and having a pH value greater than 7, and contacting said substrate with said aqueous etching solution for removing said excess tin or tin alloy layer on top of the recessed structures filled with tin or a tin alloy.

Abstract: A package includes a package component and a second package component. A first elongated bond pad is at a surface of the first package component, wherein the first elongated bond pad has a first length in a first longitudinal direction, and a first width smaller than the first length. A second elongated bond pad is at a surface of the second package component. The second elongated bond pad is bonded to the first elongated bond pad. The second elongated bond pad has a second length in a second longitudinal direction, and a second width smaller than the second width. The second longitudinal direction is un-parallel to the first longitudinal direction.

Abstract: An airfoil for use in a gas turbine engine is provided, the airfoil having a hole therein. A ceramic plug is inserted in the hole so that the plug extends above a depth of a thermal barrier coating, such as a ceramic, to be placed on the airfoil. The airfoil is then coated by non-line of sight vapor deposition and the plugs are then removed.

Abstract: A method to produce a fabric applique includes the steps of providing a piece of steel, removing oxide layers from the steel, and forming a pattern on the steel. The steel is etched and coded. A die cutting laminate including the coded steel is prepared and compressed to cut fabric.

Abstract: A method of processing a polycrystalline diamond (PCD) material having a non-diamond phase comprising a diamond catalyst/solvent and/or one or more metal carbides, comprises leaching an amount of the diamond catalyst/solvent and/or one or more metal carbides from the PCD material by exposing at least a portion of the PCD material to a leaching solution. The leaching solution comprises nitric acid diluted in water, wherein the nitric acid is between around 2 to 5 wt % in the nitric acid and water mixture, and one or more additional mineral acids.

Abstract: Coated film is removed at an outer peripheral edge of a substrate before heat-treating in CSD method by spraying or dropping liquid for removing CSD coated film including water and organic solvent mixed in a weight ratio of 50:50 to 0:100, in which the organic solvent is one or more selected from the group consisting of ?-diketones, ?-ketoesters, polyhydric alcohol, carboxylic acids, alkanolamines, ?-hydroxy carboxylic acid, ?-hydroxy carbonyl derivatives, and hydrazone derivatives.

Abstract: A method of manufacturing a graphene monolayer on insulating substrates from CVD graphene synthesis, comprising: applying a thermal release adhesive tape to the bottom graphene layer deposited at the bottom of the metal foil in the CVD graphene synthesis, detaching the thermal release adhesive tape and the bottom graphene layer from the metal foil via the application of heat, from 1° C. up to 5° C. higher than the release temperature of the thermal release adhesive tape so that the thermal release adhesive tape with the bottom graphene layer can be removed, obtaining a metal foil with a top graphene layer sample, and transferring the top graphene layer onto a substrate via a sacrificial protective layer.

Abstract: A method for preparing a copper alloy given a certain special surface shape yields tremendous bonding strength through compatibility with an epoxy resin adhesive. With a composite part in which this technology is utilized to integrate a copper alloy member as a cover material with a CFRP, it is possible to take advantage of the characteristics of both the copper alloy and the FRP due to the tremendous bonding strength. In a step in which an FRP prepreg is put into a mold and heated and cured, usually the mold is first coated with a release agent to facilitate release from the mold, but with high-technology CFRP, bleeding of the release agent often diminishes the properties. A copper alloy sheet 21 is used as a cover material, and a CFRP 22 is cured.

Abstract: Disclosed is a technique for attaining high etching selectivity of a silicon nitride film to a silicon oxide film. The etching method includes a step of supplying a silylating agent to a substrate having a silicon nitride film and a silicon oxide film exposed on the surface thereof to thereby form a silylated film as a protective film over the surface of the silicon oxide film. After this step, an etching solution is supplied to the substrate. It is thus possible to selectively etch only the silicon nitride film.

Abstract: A method for cleaning a dielectric and metal structure within a microelectronic structure uses an oxygen containing plasma treatment, followed by an alcohol treatment, in turn followed by an aqueous organic acid treatment. Another method for cleaning a dielectric and metal structure within a microelectronic structure uses an aqueous surfactant treatment followed by an alcohol treatment and finally followed by an aqueous organic acid treatment. The former method may be used to clean a plasma etch residue from a dual damascene aperture. The second method may be used to clean a chemical mechanical polish planarizing residue from a dual damascene structure. The two methods may be used sequentially, absent any intervening or subsequent sputtering method, to provide a dual damascene structure within a microelectronic structure.

Abstract: A water dispersible, biocompatible, non-toxic, seedless Group IV nanowire having an etched surface and surface oxide is provided. Also provided is a method of forming water dispersible seedless Group IV nanowires, comprising the steps of providing pristine seedless Group IV nanowires, and reacting the nanowires with a solution of an acidic amino acid to etch the nanowires and promote the formation of a water dispersible oxide layer through the formation of etched nanowires.

Abstract: Apparatuses and methods are provided where porous metal is deposited on a substrate, a mask is provided on the porous metal and then an etching is performed.

Abstract: A method and apparatus for modifying low emissivity (low-E) coated glass, so that windows using the processed glass allow uninterrupted use of RF devices within commercial or residential buildings. Glass processed in the manner described herein will not significantly diminish the energy conserving properties of the low-E coated glass. This method and apparatus disrupts the conductivity of the coating in small regions. In an embodiment, the method and apparatus ablates the low-E coating along narrow contiguous paths, such that electrical conductivity can no longer occur across the paths. The paths may take the form of intersecting curves and/or lines, so that the remaining coating consists of electrically isolated areas. The method and apparatus are applicable both to treating glass panels at the factory as well as treating windows in-situ after installation.

Abstract: An etchant composition includes about 25 percent by weight to about 35 percent by weight of phosphoric acid, about 3 percent by weight to about 9 percent by weight of nitric acid, about 10 percent by weight to about 20 percent by weight of acetic acid, about 5 percent by weight to about 10 percent by weight of a nitrate, about 6 percent by weight to about 15 percent by weight of a sulfonic acid, about 1 percent by weight to about 5 percent by weight of an amine compound including a carboxyl group, about 0.1 percent by weight to about 1 percent by weight of a water-soluble amino acid, about 0.01 percent by weight to about 1 percent by weight of an azole compound, and water.

Abstract: A method of increasing the hydrophilicity of an implant to be implanted into living bone. The method comprises the act of depositing non-toxic salt residuals on the surface of the implant by exposing the surface to a solution including the non-toxic salts. The method further comprises the act of drying the implant.

Abstract: A liquid composition for wet etching has improved selectivity for polysilicon over silicon dioxide, even when the polysilicon is heavily doped and/or the silicon dioxide is a low temperature oxide. The composition comprises 0.05-0.4 percent by weight hydrofluoric acid, 15-40 percent by weight nitric acid, 55-85 percent by weight sulfuric acid and 2-20 percent by weight water. A method and apparatus for wet etching using the composition are also disclosed.

Abstract: Process for providing structures for an improved protein adherence on the surface of a body including the steps of a) providing a basic body made of titanium or a titanium alloy, b) acid-etching the basic body, c) storing the acid-etched basic body in an aqueous solution, whereby nanostructures are formed on the surface of the basic body, and d) drying the basic body with the nanostructures formed on its surface.

Abstract: A method for chemical mechanical polishing of a substrate comprising tungsten using a nonselective chemical mechanical polishing composition.

Abstract: A method for surface treatment of a stainless steel separator for a fuel cell comprises preparing a stainless steel sheet containing nickel, chrome and iron, and having a passive film on a surface of the stainless steel sheet, and dipping the stainless steel sheet into a mixed etching solution of nitric acid (HNO3) and sulfuric acid (H2SO4) at a temperature of 50-70° C. for 30 seconds to 30 minutes to selectively lower an amount of Fe in the passive film formed on the surface of the stainless steel sheet.

Abstract: A combination, composition and associated method for chemical mechanical planarization of a tungsten-containing substrate are described herein which afford tunability of tungsten/dielectric selectivity and low selectivity for tungsten removal in relation to dielectric material. Removal rates for both tungsten and dielectric are high and stability of the slurry (e.g., with respect to pH drift over time) is high.

Abstract: A method of reducing defect heights of iron mound defects on a mill glass coated electrical steel, comprises contacting at least a portion of a surface of a mill glass coated electrical steel with an acidic solution for a contacting time sufficient to reduce an average height of iron defects on the surface to a an average height in a range of 0 percent to 150 percent of the thickness of the mill glass coating, without effectively removing the mill glass coating. After contacting, the acid contacted mill glass coated electrical steel is rinsed with water and dried.

Abstract: A method of patterning a first material on a polymeric substrate is described. The method includes providing a polymeric film substrate having a major surface with a relief pattern including a recessed region and an adjacent raised region, depositing a first material onto the major surface of the polymeric film substrate to form a coated polymeric film substrate, forming a layer of a functionalizing material selectively on the raised region of the coated polymeric film substrate to form a functionalized raised region and an unfunctionalized recessed region, and etching the first material from the polymeric substrate selectively from the unfunctionalized recessed region.

Abstract: Disclosed is a substrate processing system, including: a processing chamber to process a substrate; a vaporizing unit to vaporize a material of liquid; a supply system to supply the processing chamber with gas of the material vaporized by the vaporizing unit; an exhaust system to exhaust an atmosphere in the processing chamber; and a cleaning liquid supply system to supply the vaporizing unit with cleaning liquid for cleaning a product deposited in the vaporizing unit, wherein the cleaning liquid supply system supplies at least two kinds of cleaning liquids into the vaporizing unit so that the product can be removed from the vaporizing unit by action of the two kinds of cleaning liquids on the product.

Abstract: The invention relates to a method for modification of a biocompatible component comprising the steps of a) providing a biocompatible component at least partly covered by metallic oxide; and b) treating at least a part of said component, which part is covered by said metallic oxide, with an aqueous composition comprising oxalic acid; whereby a modified metallic oxide is obtained. The invention also relates to a biocompatible component comprising a substrate having a surface comprising a) a microstructure comprising pits separated by plateus and/or ridges; and b) a primary nanostructure being superimposed on said microstructure, said primary nanostructure comprising depressions arranged in a wave-like formation.

Abstract: An improved composition and method for cleaning a surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of the wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying a fluorine ion component, and the amounts of the fluorine ion component and an acid component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute.

Abstract: A titanium nitride-stripping liquid for stripping a titanium nitride coating film, the titanium nitride-stripping liquid being capable of stripping a titanium nitride coating film even in a semiconductor multilayer laminate having particularly a layer that includes tungsten or a tungsten alloy, without corrosion of this layer is provided, and furthermore, a titanium nitride-stripping liquid which can strip a titanium nitride coating film without affecting an insulating layer is provided. A titanium nitride-stripping liquid including hydrofluoric acid, hydrogen peroxide and water, and further including an inorganic acid other than hydrofluoric acid.

Abstract: Disclosed is an agent for removing a conductive film, which contains: an acid having a boiling point of 80° C. or higher, a base having a boiling point of 80° C. or higher, or a compound which generates an acid or a base by external energy in combination with a solvent, a resin, and a leveling agent. Also disclosed is a method for removing a conducting film, which uses the agent for removing a conductive film. The agent for removing a conductive film and the method for removing a conductive film are capable of in-place uniformity removing a desired portion of a conductive film.