Abstract: An RFID based thermal bubble type accelerometer includes a flexible substrate, an embedded system on chip (SOC) unit, an RFID antenna formed on the substrate and coupled to a modulation/demodulation module in the SOC unit, a cavity formed on the flexible substrate, and a plurality of sensing assemblies, including a heater and two temperature-sensing elements, disposed along the x-axis direction and suspended over the cavity. The two temperature-sensing elements, serially connected, are separately disposed at two opposite sides and at substantially equal distances from the heater. Two sets of sensing assemblies can be connected in differential Wheatstone bridge. The series-connecting points of the sensing assemblies are coupled to the SOC unit such that an x-axis acceleration can be obtained by a voltage difference between the connecting points. The x-axis acceleration can be sent by the RFID antenna to a reader after it is is modulated and encoded by the modulation/demodulation module.

Abstract: A process for creating porous anode foil for use in an electrolytic capacitor of an implantable cardioverter defibrillator is provided. The process includes electrochemical drilling a plurality of etched metal foils in sequence one after the other in a bath containing electrochemical drilling (ECD) solution initially having a pH of less than 5. Alternatively, an etched foil sheet may be passed through the bath in a substantially continuous manner such that a portion of said etched foil sheet is in contact with the ECD solution is electrochemically drilled to generate pores. Electrochemical drilling is achieved when a current is passed to the foil or portion of the foil sheet in solution.

Abstract: The present invention relates to a method for the wet-chemical edge deletion of solar cells. An etching paste is applied to the edge of a solar cell substrate surface and after the reaction is complete, the paste residue is removed. Optionally, the substrate surface is cleaned and dried. The etching paste comprises 85% H3PO4, NH4HF2 and 65% HNO3 in a ratio in the range from 7:1:1.5 to 10:1:3.5, based on the weight.

Abstract: A process for producing an aluminum wheel includes a cleaning step, in which the surface of the aluminum wheel is chemically etched with an alkali cleaning liquid which contains an alkali builder, an organic builder, and a chelating agent to such an extent that the Si atomic ratio of metal Si to oxide Si is from 0.01 to 9, and a shot blast treatment step can be omitted for cleaning the surface of the aluminum wheel.

Abstract: The invention is directed to a chemical-mechanical polishing formulation that includes: an abrasive particulate component; iodic acid; and water. The invention is also directed to a method for polishing a metal-containing substrate, the method including the steps of polishing the metal-containing substrate with a polishing pad at a suitable polishing pressure while the metal-containing substrate is in contact with the above polishing formulation.

Abstract: Surface texturing of the transparent conductive oxide (TCO) front contact of a thin film photovoltaic (TFPV) solar cell is needed to enhance the light-trapping capability of the TFPV solar cells and thus improving the solar cell efficiency. Embodiments of the current invention describe chemical formulations and methods for the wet etching of the TCO. The formulations and methods may be optimized to tune the surface texturing of the TCO as desired.

Abstract: The present invention provides an etching solution for silver or silver alloy comprising one at least ammonium compound represented by the formula (1), (2) or (3) below and an oxidant:

Abstract: The present invention relates to a biocompatible injectable filler composition comprising calcium phosphate particles having a porosity of about 10% to about 90%, a BET surface area of about 1 m2/g to about 100 m2/g, and a mean particle size of about 1 micron to about 30 microns, a thermoreversible hydrophilic gelling agent, a carrier comprising water and an optional persistence enhancer and/or volumizing agent, and methods of its use to restore tissue volume and/or to smooth out tissue defects as in soft tissue or deep tissue augmentation.

Abstract: A method of increasing the hydrophilicity of an implant to be implanted into living bone. The method comprises the act of depositing non-toxic salt residuals on the surface of the implant by exposing the surface to a solution including the non-toxic salts. The method further comprises the act of drying the implant.

Abstract: Diamond electrodes with improved adhesion of the diamond layer to the electrode are produced by sandblasting a surface of the electrode body, and then non-oxidatively etching the roughened (sandblasted) surface so as to remove at least 5 ?m of material from under the roughened surface. By removing at least 5 ?m of material, the sand particulates in the surface of the electrode body are eliminated, and damage in the form of cracks in the electrode body which result from sandblasting is reduced or eliminated, and further, a surface metal oxide coating is not created. All of these contribute to preparing a surface where spalling of the diamond layer is less likely to occur. Concentrated phosphoric acid is an exemplary non-oxidative etchant used in the process.

Abstract: A method for the pre-treatment of titanium components for the subsequent coating thereof is provided. The method includes at least the following steps: a) etching of the component in an acidic solution containing fluoride and nitric acid (HNO3); b) activation pickling of the etched component in a solution containing at least sodium nitrate (NaNO3) and tetrafluoroboric acid (HBF4); and c) activation of the activation-pickled component in a bath containing acid or in an acidic bath containing nickel.

Abstract: One aspect of the invention is a method of surface alloying stainless steel, In one embodiment, the method includes providing a stainless steel surface having an initial amount of iron and an initial amount of chromium; and preferentially removing iron from the stainless steel surface to obtain a surface having an amount of iron less than the initial amount of iron and an amount of chromium greater than the initial amount of chromium. Another aspect of the invention is a unitary stainless steel article.

Abstract: Implantable materials having engineered surfaces and method of making same comprising geometric features on at least one surface of the material having at least one of chemical, physiochemical and electrochemical activity different than regions of the at least one surface without the features.

Abstract: The present invention discloses an etchant for etching at least two different metal layers, the etchant comprising hydrogen peroxide (H2O2) and one of carboxylic acid, carboxylate salt, and acetyl group (CH3CO—). The present invention also discloses a method of fabricating a metal wiring on a substrate, the method comprising forming a first metal layer on a substrate, forming a second metal layer on the first metal layer, and simultaneously etching the first metal layer and the second metal layer with an etchant comprising hydrogen peroxide (H2O2) and one of carboxylic acid, carboxylate salt, and acetyl group (CH3CO—).

Abstract: The invention relates to a method for obtaining a surface of a titanium-based metal implant intended to be inserted into bone tissue, comprising: (a) projecting particles of aluminum oxide under pressure on the external area of the implant; (b) chemically treating the sandblasted external area of the implant with an acid composition comprising sulfuric acid and hydrofluoric acid; and (c) thermally treating the sandblasted external area of the implant by heating at a temperature of 200-450° C. for 15-120 min. The invention likewise defines a metal implant having said surface. The surface thus obtained has good micrometer-scale roughness with a suitable morphology, as well as a composition which is virtually free of impurities and a thickness which is approximately three times the thickness of conventional surfaces, which characteristics provide it with very good osseointegration properties.

Abstract: Methods for manufacturing cast titanium helmets include casting a helmet in an oversized mold. The resulting oversized cast helmet is then exposed to a hot isostatic press (HIP) process that applies heat and pressure for a predetermined period of time. The resulting oversized cast helmet is then exposed to an acid bath that chemically mills the helmet to a desired thickness and removes contaminants formed during casting of titanium.

Abstract: The present matter provides an improved grating surface and graters comprising an improved grating surface. The grating surface comprises one or more cutting blades extending outwardly from the grating surface each including a cutting edge, and at least one groove located on the grating surface and extending towards the cutting edge of the at least one cutting blade. The at least one groove can be located on the cutting blade surface and extend towards and into the cutting edge. The at least one grove can be formed by chemical etching techniques (e.g. in a grating surface of metal such as stainless steel). Grooves and cutting blades can be simultaneously formed. in a grating surface by chemical etching.

Abstract: The invention provides a metal polishing composition that is used in chemical mechanical polishing in production of a semiconductor device, and includes an oxidizing agent, an abrasive grain, and at least one compound selected from compounds represented by the following formula (I) and the following formula (II). The invention also provides a chemical mechanical polishing method that uses the metal polishing composition. In formula (I), R1 represents a hydrogen atom or an alkyl group, and Ph represents a phenyl ring. In formula (II), R2 represents a hydrogen atom or an alkyl group, and Ph represents a phenyl ring.

Abstract: In the manufacture of integrally designed rotor wheels (BLISKs), the natural frequency of each blade is measured after forming by conventional shaping methods and the respective blade mass and its divergence from the smallest blade mass is calculated therefrom. The mass of each blade exceeding the smallest blade mass is removed by means of an etchant, so that all blades have essentially corresponding thickness, chord length, mass and natural frequency and are evenly loaded in operation. BLISKs manufactured in this way feature a long service life.

Abstract: The present disclosure provides a chemical etchant which is capable of removing Ge and Ge-rich SiGe alloys in a controlled manner. The chemical etchant of the present disclosure includes a mixture of a halogen-containing acid, hydrogen peroxide, and water. Water is present in the mixture in an amount of greater than 90% by volume of the entire mixture. The present disclosure also provides a method of making such a chemical etchant. The method includes mixing, in any order, a halogen-containing acid and hydrogen peroxide to provide a halogen-containing acid/hydrogen peroxide mixture, and adding water to the halogen-containing acid/hydrogen peroxide mixture. Also disclosed is a method of etching a Ge or Ge-rich SiGe alloy utilizing the chemical etchant of the present application.

Abstract: The invention concerns article having a surface oxide layer up to 20 nm thick, the surface oxide layer comprising chromium and cobalt oxides where the atomic ratio of Cr/Co is more than 3. The invention also concerns methods for treating a chromium containing material, said method comprising contacting said material with a gas plasma under conditions effective to oxidize at least a portion of the material; and contacting said material with an acid. The treated surface is corrosion resistant and can be used in orthopedic implants, especially the wear surface of the orthopedic implant to reduce wear, and other corrosive environment.

Abstract: Methods for preventing isotropic removal of materials at corners formed by seams, keyholes, and other anomalies in films or other structures include use of etch blockers to cover or coat such corners. This covering or coating prevents exposure of the corners to isotropic etch solutions and cleaning solutions and, thus, prevents higher material removal rates at the corners than at smoother areas of the structure or film from which material is removed. Solutions, including wet etchants and cleaning solutions, that include at least one type of etch blocker are also disclosed, as are systems for preventing higher rates of material removal at corners formed by seams, crevices, or recesses in a film or other structure. Semiconductor device structures in which etch blockers are located so as to prevent isotropic etchants from removing material from corners of seams, crevices, or recesses in a surface of a film or other structure at undesirably high rates are also disclosed.

Abstract: The present invention relates to a novel printable etching medium having non-Newtonian flow behavior for the etching of surfaces in the production of solar cells, and to the use thereof. The present invention furthermore also relates to etching and doping media which are suitable both for the etching of inorganic layers and also for the doping of underlying layers. In particular, they are corresponding particle-containing compositions by means of which extremely fine structures can be etched very selectively without damaging or attacking adjacent areas.

Abstract: A method for producing plastic shell includes following steps. Provide a male mold and a female mold, then chemically etching a first texture on a surface of the female mold. Form a second texture on the surface of the female mold. Produce a plastic shell with various types of textures using the male mold and the female mold.

Abstract: Bone repair materials are disclosed, from which ions are hardly eluted in living body and which are superior in apatite-forming ability and resistance to apatite peeling and have a scratch resistance high enough for practical use. The material comprises a substrate made of titanium or titanium alloys, and a surface layer, made substantially of titanium oxide, along the surface of the substrate. The substrate has on the surface thereof irregularities of from 1 nm to 10 ?m in average in both width and depth. The layer has a zeta potential of +4.5 mV or more under an aqueous solution environment of pH 6 to 8, and a critical scratch resistance of 35 mN or more when vibration 100 ?m in amplitude is added to a stylus with a spring constant of 200 g/mm on the surface layer and the stylus is moved at a rate of 10 mm/sec under a load increasing at a rate of 100 mN/min.

Abstract: An etching composition which comprises at least one organic carboxylic acid compound selected from acetic acid, propionic acid, butyric acid, succinic acid, citric acid, lactic acid, malic acid, tartaric acid, malonic acid, maleic acid, glutaric acid, aconitic acid, 1,2,3-propanetricarboxylic acid and ammonium salts of these acids, a polysulfonic acid compound and water, and an etching process which comprises etching a conductive film comprising zinc oxide as the main component using the etching composition described above.

Abstract: A process for selectively stripping a coating from a component of a turbomachine, and particularly a coating having a ceramic matrix that contains metallic particles dispersed therein that render the coating more difficult to remove from the component after the component has been subjected to elevated temperatures during operation of the turbomachine. The process generally includes immersing the component in an aqueous solution containing ferric chloride, nitric acid, and phosphoric acid, for a duration sufficient to attack the metallic particles in the coating. The component is then removed from the aqueous solution and its surface rinsed of the aqueous solution. The immersing and removing steps are then sequentially repeated a sufficient number of times to sufficiently attack the metallic particles to enable the coating to be mechanically removed from the component.

Abstract: According to one embodiment, a method of treating catalyst for nanocarbon production comprises, bringing a surface of a catalytic material into contact with a chemical, the catalytic material containing a metallic material and being used to produce nanocarbon, corroding the surface of the catalytic material, and drying the surface of the catalytic material.

Abstract: A method for manufacturing a semiconductor device includes the step of conducting a cleaning process for a wafer formed with copper wiring lines to remove contaminations produced on a back surface of the wafer. The cleaning process is conducted by injecting onto the back surface of the wafer an etchant for removing contaminations and simultaneously injecting onto a front surface of the wafer a reductant containing hydrogen.

Abstract: When forming an opening conforming to a groove of a quartz resonator in a metal film serving as a mask of the quartz resonator by conducting etching, the outer periphery of the metal film is wavingly etched. Therefore, when the groove is formed on the quartz resonator, the quartz resonator is formed according to the above-described metal film, which results in appearance defects or dimension defects. In order to solve the problems, the outer shape of the metal film is formed smaller than the outer shape of the quartz resonator before forming the opening conforming to the groove of the quartz resonator in the metal film, then etching of the metal film and etching of the quartz resonator are performed.

Abstract: A method of fabricating a liquid crystal display array substrate includes forming a gate wiring line having a gate pad electrode, forming a data wiring line having a data pad electrode, forming a protection layer over the gate pad electrode and the data pad electrode, and positioning etching tapes on the protection layer over the gate pad electrode and the data pad electrode.

Abstract: A method of etching polysilicon includes exposing a substrate comprising polysilicon to a solution comprising water, HF, and at least one of a conductive metal nitride, Pt, and Au under conditions effective to etch polysilicon from the substrate. In one embodiment, a substrate first region comprising polysilicon and a substrate second region comprising at least one of a conductive metal nitride, Pt, and Au is exposed to a solution comprising water and HF. The solution is devoid of any detectable conductive metal nitride, Pt, and Au prior to the exposing. At least some of the at least one are etched into the solution upon the exposing. Then, polysilicon is etched from the first region at a faster rate than any etch rate of the first region polysilicon prior to the etching of the at least some of the conductive metal nitride, Pt, and Au.

Abstract: A method of patterning a transparent conductive film adaptive for selectively etching a transparent conductive film without any mask processes, a thin film transistor for a display device using the same and a fabricating method thereof are disclosed. In the method of patterning the transparent conductive film, an inorganic material substrate is prepared. An organic material pattern is formed at a desired area of the inorganic material substrate. A thin film having a different crystallization rate depending upon said inorganic material and said organic material is formed. The thin film is selectively etched in accordance with said crystallization rate.

Abstract: A method of processing a metallic material includes immersing ferritic stainless steel or austenitic stainless steel in an acid solution containing hydrochloric acid in an amount of two times or more relative to the concentration of nitric acid or an acid solution containing hydrofluoric acid in an amount of one and a half times or more relative to the concentration of nitric acid to adjust surface roughness of the metallic material.

Abstract: A method for a repair process includes the steps of subjecting a substrate coated with at least one protective metallic coating to a nitric acid solution and then subjecting the substrate with the at least one protective metallic coating to a hydrochloric acid solution to remove the at least one protective metallic coating from the substrate. The substrate includes about 5 wt %-15 wt % chromium, about 2 wt %-8 wt % cobalt, about 2 wt %-6 wt % tungsten, about 0.5 wt %-2.5 wt % titanium, about 8 wt %-16 wt % tantalum, about 2 wt %-8 wt % aluminum, hafnium in an amount no greater than 1 wt %, and a remainder of nickel.

Abstract: A method for removing an undesirable material from an electronic or electrical component and introducing a desirable material in place of the undesirable material. The method can include the replacement of a leaded material found on the component with a no-lead material to meet governmental directives including those of the European Union.

Abstract: A process for manufacturing a semiconductor device using a spacer as an etch mask for forming a fine pattern is described. The process includes forming a hard mask layer over a target layer that is desired to be etched. A sacrificial layer pattern is subsequently formed over the hard mask layer. Spacers are formed on the sidewalls of the sacrificial layer pattern. The protective layer is formed on the hard mask layer portions between the sacrificial patterns formed with the spacer. The sacrificial layer pattern and the protective layer are then later removed, respectively. The hard mask layer is etched using the spacer as an etching mask. After etching, the spacer is removed. Finally, the target layer is etched using the etched hard mask as an etching mask.

Abstract: By forming a protection layer on the back side of a substrate prior to any process sequences, which may deposit material or material residues on the back side, the respective back side uniformity may be significantly enhanced, thereby also increasing process efficiency of subsequent back side critical processes, such as lithography, back end of line processes and the like. In one illustrative embodiment, silicon carbide may be used as a material for forming a respective protection layer.

Abstract: The present invention relates to a method and an arrangement for restoring strength and wear resistant of a metallic matrix ceramic (1) comprising a metallic binder (2) and ceramic filler (3) particles, which metallic matrix ceramic (1) has been exposed for long term high temperature and pressure cycling, for example in a gas exhaust nozzle (6), whereby micro cracks (4) are developed in the outer layer (5) of the metallic binder (2) According to the invention this is achieved by virtue of the fact that the outer layer (5) of the metallic binder (2), partly or fully, is removed from the MMC part (1) by a chemical operation, where after the outer layer (5) is compressed by a compression operation for achieving a dense outer layer (5), in which filler (3) particles are close to each other.

Abstract: In one aspect, there is provided a process for manufacturing a lower mold for receiving a falling molten glass droplet, in which without narrowing the option for material for a lower mold, any occurrence of air retention can be favorably prevented and a lower mold excelling in durability can be obtained. The process comprises the film forming step of forming a coating layer on a base material and the surface roughening step of roughening the surface of the coating layer. Preferably, the coating layer contains at least one element selected from among chromium, aluminum and titanium.

Abstract: A method for surface treatment of a stainless steel separator for a fuel cell comprises preparing a stainless steel sheet containing nickel, chrome and iron, and having a passive film on a surface of the stainless steel sheet, and dipping the stainless steel sheet into a mixed etching solution of nitric acid (HNO3) and sulfuric acid (H2SO4) at a temperature of 50-70° C. for 30 seconds to 30 minutes to selectively lower an amount of Fe in the passive film formed on the surface of the stainless steel sheet.

Abstract: An optical element manufacturing method includes: disposing a light-shielding layer (14) that includes at least an Si layer as an uppermost layer, on a substrate (12) used as a base member, forming an optical aperture (14a) at the light-shielding layer (14) and forming a fine recession/projection structure (MR) at a surface of the uppermost layer through dry etching.

Abstract: A method of substantially uniformly etching oxides from non-homogeneous substrates is provided. The method utilizes a substantially non-aqueous etchant including an organic solvent and a fluorine-containing compound. The fluorine containing compound may include HF, HF:NH4F, (NH4)HF2, or TMAF:HF and mixtures thereof. The etchant may be applied to chemically non-homogeneous layers such as shallow trench isolation fill oxide layers, or to layers having a non-homogeneous composition or density at different depths within the layers, such as spin-on-glass or spin-on-dielectric films.

Abstract: A method of producing a metal structure with a grooved wicking surface is provided. An aluminum alloy is provided that is thermomechanically processed to produce grain size and shape suitable for wicking. Then, the alloy is heat treated to produce a continuous etchable phase on the grain boundaries. The alloy is then etched with a solvent that dissolves the continuous etchable phase on the grain boundaries to produce the metal structure with a grooved wicking surface. In addition, the method of producing a laminate metal structure with a grooved wicking surface is provided. The laminate is provided with at least a top layer and a bottom layer where the top layer and bottom layer are made of an aluminum alloy. The laminate is thermomechanically processed to produce grain size and shape spanning the entire depth of the top layer suitable for wicking. Then, the laminate is heat treated to produce a continuous etchable phase on the grain boundaries within the top layer.

Abstract: A composition for removing a conductive material and a manufacturing method of an array substrate using the composition, wherein the composition may include a nitric acid of about 3 to 15 wt %, a phosphoric acid of about 40 to 70 wt %, an acetic acid of about 5 to 35 wt %. The composition may further include a chlorine compound of about 0.05 to 5 wt %, a chlorine stabilizer of about 0.01 to 5 wt %, a pH stabilizer of about 0.01 to 5 wt %, and water of residual quantity.

Abstract: A surface treatment method for housings, comprising: providing a substrate made of damascus steel; and chemically etching the substrate using inorganic acid solution or inorganic salts solution to give the substrate a patterned appearance.

Abstract: There is provided a method for removing molten and scattered Cu and overhang that are generated around a via opening during laser machining in a direct laser via forming method of directly machining an outer-layer copper foil. In a manufacturing method of a printed wiring board of machining the via by laser directly through the copper foil of a copper-clad laminate in which the copper foil is clad on a base material resin, a process for machining the via is carried out in a sequence of (a) a copper foil surface treatment step of forming an oxide film on the surface of said copper foil, (b) a laser via machining step, (c) an alkali treatment step and (d) a molten and scattered Cu etching step. It is desirable to carry out (e) a de-smearing treatment after the molten and scattered Cu etching.

Abstract: A film of single-layer to few-layer graphene is formed by depositing a graphene film via chemical vapor deposition on a surface of a growth substrate. The surface on which the graphene is deposited can be a polycrystalline nickel film, which is deposited by evaporation on a SiO2/Si substrate. A protective support layer is then coated on the graphene film to provide support for the graphene film and to maintain its integrity when it is removed from the growth substrate. The surface of the growth substrate is then etched to release the graphene film and the protective support layer from the growth substrate, wherein the protective support layer maintains the integrity of the graphene film during and after its release from the growth substrate. After being released from the growth substrate, the graphene film and protective support layer can be applied onto an arbitrary target substrate for evaluation or use in any of a wide variety of applications.

Abstract: The present invention provides an etchant composition containing 60 to 75 wt % of phosphoric acid (H3PO4), 0.5 to 15 wt % of nitric acid (HNO3), 2 to 15 wt % of acetic acid (CH3COOH), and 0.1 to 15 wt % of aluminum nitrate (Al(NO3)3).

Abstract: Process for roughening a surface of a base metal substrate includes contacting the surface with an aqueous solution comprising oxalic acid, sulfuric acid, and hydrogen peroxide at a temperature and for a period of time effective to roughen the surface to an average roughness greater than 60 Ra, removing a modest amount of base material, and generating no narrow and deep crevices at all. The surface is roughened prior to application of an electroless coating onto the substrate.