Etching Of Semiconductor Material To Produce An Article Having A Nonelectrical Function Patents (Class 216/2)
  • Publication number: 20110229667
    Abstract: Systems, techniques and applications for nanoscale coating structures and materials that are superhydrophobic with a water contact angle greater than about 140° or 160° and/or superoleophobic with an oil contact angle greater than about 140° or 160°. The nanostructured coatings can include Si or metallic, ceramic or polymeric nanowires that may have a re-entrant or mushroom-like tip geometry. The nanowired coatings can be used in various self-cleaning applications ranging from glass windows for high-rise buildings and non-wash automobiles to pipeline inner surface coatings and surface coatings for biomedical implants.
    Type: Application
    Filed: August 18, 2009
    Publication date: September 22, 2011
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Sungho Jin, Jin-Yeol Kim, Kunbae Noh, Chulmin Choi
  • Patent number: 8019186
    Abstract: The invention relates to a photonic crystal circuit comprising a guide produced in a photonic crystal membrane on the surface of a substrate and a mode adapter coupled to said guide, wherein the membrane includes a central point constituting the mode adapter having a section gradient as termination of said guide, said point being suspended so as to allow the propagation of modes in a symmetrical manner. It also relates to an optical system incorporating said circuit coupled to an optical fiber.
    Type: Grant
    Filed: July 8, 2009
    Date of Patent: September 13, 2011
    Assignee: Thales
    Inventors: Sylvain Combrie, Nguyen Vy Quynh Tran, Alfredo De Rossi
  • Patent number: 8019458
    Abstract: The invention provides a method of processing a wafer using multilayer processing sequences and Multi-Layer/Multi-Input/Multi-Output (MLMIMO) models and libraries that can include one or more measurement procedures, one or more Poly-Etch (P-E) sequences, and one or more metal-gate etch sequences. The MLMIMO process control uses dynamically interacting behavioral modeling between multiple layers and/or multiple process steps. The multiple layers and/or the multiple process steps can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created using isotropic and/or anisotropic etch processes.
    Type: Grant
    Filed: August 6, 2008
    Date of Patent: September 13, 2011
    Assignee: Tokyo Electron Limited
    Inventors: Merritt Funk, Radha Sundararajan, Asao Yamashita, Daniel Prager, Hyung Joo Lee
  • Patent number: 8012363
    Abstract: A method of fabricating a printhead having a hydrophobic ink ejection face, the method comprising the steps of: (a) providing a partially-fabricated printhead comprising a plurality of nozzle chambers and a nozzle plate having relatively hydrophilic nozzle surface, the nozzle surface at least partially defining the ink ejection face of the printhead; (b) depositing a hydrophobic polymeric layer onto the nozzle surface; (c) depositing a protective metal film onto at least the polymeric layer; (d) depositing a sacrificial material onto the polymeric layer; (e) patterning the sacrificial material to define a plurality of nozzle opening regions; (f) defining a plurality of nozzle openings through the metal film, the polymeric layer and the nozzle plate; (g) subjecting the printhead to an oxidizing plasma; and (h) removing the protective metal film, thereby providing a printhead having a relatively hydrophobic ink ejection face.
    Type: Grant
    Filed: November 29, 2007
    Date of Patent: September 6, 2011
    Assignee: Silverbrook Research Pty Ltd
    Inventors: Gregory John McAvoy, Emma Rose Kerr, Kia Silverbrook
  • Patent number: 8000001
    Abstract: The invention comprises a polymeric microarray support (1) for an optical assay arrangement (2) comprising optical means (3, 4, 6) for detection of light emitted from the support. The microarray support is provided with microfeatures comprising a surface enlarging pattern (5), i.e. grooves having a selected depth (8). The depth is selected such that the sum of the depth and of the variations in the thickness (7) of the support substantially corresponds to the depth of focus of the optical means.
    Type: Grant
    Filed: May 18, 2004
    Date of Patent: August 16, 2011
    Assignee: Amic AB
    Inventors: Tomas Lindström, Ove Öhman
  • Patent number: 7997123
    Abstract: A dispensing device has a cantilever comprising a plurality of thin films arranged relative to one another to define a microchannel in the cantilever and to define at least portions of a dispensing microtip proximate an end of the cantilever and communicated to the microchannel to receive material therefrom. The microchannel is communicated to a reservoir that supplies material to the microchannel. One or more reservoir-fed cantilevers may be formed on a semiconductor chip substrate. A sealing layer preferably is disposed on one of the first and second thin films and overlies outermost edges of the first and second thin films to seal the outermost edges against material leakage. Each cantilever includes an actuator, such as for example a piezoelectric actuator, to impart bending motion thereto. The microtip includes a pointed pyramidal or conical shaped microtip body and an annular shell spaced about the pointed microtip body to define a material-dispensing annulus thereabout.
    Type: Grant
    Filed: June 19, 2007
    Date of Patent: August 16, 2011
    Assignee: Northwestern University
    Inventors: Horacio D. Espinosa, Nicolaie A. Moldovan, Keun-Ho Kim
  • Patent number: 7998355
    Abstract: A method of generating a mask for printing a pattern including a plurality of features. The method includes the steps of depositing a layer of transmissive material having a predefined percentage transmission on a substrate; depositing a layer of opaque material on the transmissive material; etching a portion of the substrate, the substrate being etched to a depth based on an etching selectivity between the transmissive layer and the substrate; exposing a portion of the transmissive layer by etching the opaque material; etching the exposed portion of the transmissive layer so as to expose an upper surface of the substrate; where the exposed portions of the substrate and the etched portions of the substrate exhibit a predefined phase shift relative to one another with respect to an illumination signal.
    Type: Grant
    Filed: July 6, 2007
    Date of Patent: August 16, 2011
    Assignee: ASML Masktools B.V.
    Inventors: Douglas Van Den Broeke, Kurt E. Wampler, Jang Fung Chen
  • Patent number: 7998356
    Abstract: The invention relates to a process for manufacturing an integrated optical device. The method involves forming a silicon dioxide multilayer structure on a silicon substrate containing, in a first region a core layer of a waveguide of the optical device. The core includes an electromagnetic radiation inlet/outlet A trench in a second region of the multilayer structure adjacent said first region is formed by a an anisotropic etching, the trench including side walls and a bottom wall spaced from the Substrate.
    Type: Grant
    Filed: January 16, 2008
    Date of Patent: August 16, 2011
    Assignee: STMicroelectronics S.r.l.
    Inventors: Francesco Martini, Daniela Barge, Ubaldo Mastromatteo
  • Patent number: 7993534
    Abstract: A method for forming a chemical microreactor includes forming at least one capillary microchannel in a substrate having at least one inlet and at least one outlet, integrating at least one heater into the chemical microreactor, interfacing the capillary microchannel with a liquid chemical reservoir at the inlet of the capillary microchannel, and interfacing the capillary microchannel with a porous membrane near the outlet of the capillary microchannel, the porous membrane being positioned beyond the outlet of the capillary microchannel, wherein the porous membrane has at least one catalyst material imbedded therein.
    Type: Grant
    Filed: March 27, 2009
    Date of Patent: August 9, 2011
    Assignee: Lawrence Livermore National Security, LLC
    Inventors: Jeffrey D. Morse, Alan Jankowski
  • Publication number: 20110188801
    Abstract: A semiconductor hollow-core waveguide using high-contrast gratings or photonic crystal claddings and a method of manufacturing the same includes providing a layered semiconductor structure; creating an etching mask pattern over the layered semiconductor structure; performing a combined cycled directional etching process on the layered semiconductor structure in one sequence and in one lithography level to create a 3-dimensional waveguide structure; and creating a hollow air core in the layered semiconductor structure by removing to define a shape of the waveguide. The etching process comprises vertically etching a series of deep trenches on the layered semiconductor structure with precise control and varying the width of the trench. Furthermore, the hollow air core is created by removing a portion of the sacrificial material located in the center of the waveguide and under the waveguide.
    Type: Application
    Filed: February 4, 2010
    Publication date: August 4, 2011
    Inventor: Weimin Zhou
  • Patent number: 7988875
    Abstract: A method and apparatus is provided for controlling the etch profile of a multilayer layer stack by depositing a first and second material layer with differential etch rates in the same or different processing chamber.
    Type: Grant
    Filed: February 7, 2008
    Date of Patent: August 2, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Soo Young Choi, Gaku Furuta
  • Patent number: 7981303
    Abstract: A novel silicon micromirror structure for improving image fidelity in laser pattern generators is presented. In some embodiments, the micromirror is formed from monocrystalline silicon. Analytical- and finite element analysis of the structure as well as an outline of a fabrication scheme to realize the structure are given. The spring constant of the micromirror structure can be designed independently of the stiffness of the mirror-surface. This makes it possible to design a mirror with very good planarity, resistance to sagging during actuation, and it reduces influence from stress in reflectivity-increasing multilayer coatings.
    Type: Grant
    Filed: September 19, 2008
    Date of Patent: July 19, 2011
    Assignee: Micronic MyData AB
    Inventors: Martin Bring, Peter Enoksson
  • Publication number: 20110172605
    Abstract: The present invention provides a microneedle, comprising a shaft of a monocrystalline material having at least three was which are formed by a crystal plane of the monocrystalline material; and a tip connected to an end of the shaft comprising at least three walls which are formed by a crystal plane of the material. The material is preferably silicon. Two of the walls of the tip are formed by the same crystal planes as two walls of the shaft. These two walls are formed by a <111> crystal plane. Preferably, three walls of the tip are formed by a <111> crystal plane.
    Type: Application
    Filed: June 24, 2009
    Publication date: July 14, 2011
    Applicant: U-NEEDLE HOLDING B.V.
    Inventors: Johan Willem Berenschot, Jeroen Mathijn Wissink, Niels Roelof Tas, Meint Jelle DeBoer
  • Patent number: 7976714
    Abstract: Methods for producing a MEMS device from a single silicon-on-insulator (SOI) wafer. An SOI wafer includes a silicon (Si) handle layer, a Si mechanism layer and an insulator layer located between the Si handle and Si mechanism layers. An example method includes etching active components from the Si mechanism layer. Then, the exposed surfaces of the Si mechanism layer is doped with boron. Next, portions of the insulator layer proximate to the etched active components of the Si mechanism layer are removed and the Si handle layer is etched proximate to the etched active components.
    Type: Grant
    Filed: January 4, 2008
    Date of Patent: July 12, 2011
    Assignee: Honeywell International Inc.
    Inventor: Lianzhong Yu
  • Publication number: 20110164237
    Abstract: A transmissive spectral purity filter is configured to transmit extreme ultraviolet radiation. The spectral purity filter includes a filter part having a plurality of apertures configured to transmit extreme ultraviolet radiation and to suppress transmission of a second type of radiation. Each aperture has been manufactured by an anisotropic etching process.
    Type: Application
    Filed: August 26, 2009
    Publication date: July 7, 2011
    Applicants: ASML NETHERLANDS B.V., KONINKLIJKE PHILIPS ELECTRONICS N.V.
    Inventors: Wouter Anthon Soer, Andrei Mikhailovich Yakunin, Martin Jacobus Johan Jak, Denny Mathew, Hendrik Jan Kettelarij, Fredericus Christiaan Van Den Heuvel, Elizabeth Maria Kuijpers
  • Patent number: 7973373
    Abstract: A microminiature moving device has disposed on a single-crystal silicon substrate movable elements such as a movable rod and a movable comb electrode that are displaceable in parallel to the substrate surface and stationary parts that are fixedly secured to the single -crystal silicon substrate with an insulating layer sandwiched between. Depressions are formed in the surface regions of the single-crystal silicon substrate where no stationary parts are present and the movable parts are positioned above the depressions. The depressions form gaps large enough to prevent foreign bodies from causing shorts and malfunctioning of the movable parts.
    Type: Grant
    Filed: December 1, 2008
    Date of Patent: July 5, 2011
    Assignee: Japan Aviation Electronics Industry Limited
    Inventors: Keiichi Mori, Yoshichika Kato, Satoshi Yoshida, Kenji Kondou, Yoshihiko Hamada, Osamu Imaki
  • Patent number: 7968017
    Abstract: This invention relates to a stamper for optical disc and a method for manufacturing an optical disc by using this stamper. A photoresist is applied to a substrate (2) and this photoresist is exposed, developed and then transferred to form a disc master which has a recess/protrusion pattern formed on its one side. The one side of the disc master (20) is etched to narrow the width of a protruding part constituting the recess/protrusion pattern, and the recess/protrusion pattern of the disc master (20) with the reduced width of the protruding part is transferred to form a stamper (30). The recess/protrusion pattern provided on the stamper (30) is transferred to form a predetermined pattern on a substrate of an optical disc.
    Type: Grant
    Filed: March 15, 2005
    Date of Patent: June 28, 2011
    Assignee: Sony Corporation
    Inventors: Jun Nakano, Yuji Akiyama, Shin Masuhara
  • Publication number: 20110135265
    Abstract: Provided are a method of forming a waveguide facet and a photonics device using the method. The method includes forming at least one optical device die including waveguides on a substrate, forming at least one trench in a lower surface of the substrate, and cleaving the substrate to form facets of the waveguides over the trench. The trench is formed along a direction crossing the waveguides under the waveguides.
    Type: Application
    Filed: July 23, 2010
    Publication date: June 9, 2011
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Sahnggi PARK, Kap-Joong Kim, Gyungock Kim
  • Publication number: 20110130478
    Abstract: The invention provides mesostructured materials and methods of preparing mesostructured materials including metal-rich mesostructured nanoparticle-block copolymer hybrids, porous metal-nonmetal nanocomposite mesostructures, and ordered metal mesostructures with uniform pores. The nanoparticles can be metal, metal alloy, metal mixture, intermetallic, metal-carbon, metal-ceramic, semiconductor-carbon, semiconductor-ceramic, insulator-carbon or insulator-ceramic nanoparticles, or combinations thereof. A block copolymer/ligand-stabilized nanoparticle solution is cast, resulting in the formation of a metal-rich (or semiconductor-rich or insulator-rich) mesostructured nanoparticle-block copolymer hybrid. The hybrid is heated to an elevated temperature, resulting in the formation of an ordered porous nanocomposite mesostructure. A nonmetal component (e.g., carbon or ceramic) is then removed to produce an ordered mesostructure with ordered and large uniform pores.
    Type: Application
    Filed: January 13, 2009
    Publication date: June 2, 2011
    Inventors: Scott Warren, Ulrich Wiesner, Francis J. Disalvo, JR.
  • Patent number: 7950847
    Abstract: The invention relates to a Breguet overcoil balance spring (1) that includes a hairspring (3) mounted in a single part, made of micro-machinable material, and coaxially with a collet (5). According to the invention, the balance spring has a terminal curve (7) made of micro-machinable material and an elevation device (9) made of micro-machinable material between the outer coil (15) of the hairspring and the terminal curve to improve the concentric development of the balance spring. The invention also relates to the method of manufacturing the balance spring. The invention concerns the field of timepiece making.
    Type: Grant
    Filed: October 26, 2009
    Date of Patent: May 31, 2011
    Assignee: Montres Breguet S.A.
    Inventors: Alain Zaugg, Christophe Bifrare
  • Patent number: 7951299
    Abstract: A method of fabricating a microresonator is disclosed. Initially, silica is deposited on a substrate, and the substrate is etched to form a pillar, the top portion of which supports the silica. The microresonator is then formed from the silica. Next, the pillar is etched to reduce the overall diameter of the top portion of the pillar so that the microresonator can be disengaged from the pillar.
    Type: Grant
    Filed: February 21, 2008
    Date of Patent: May 31, 2011
    Assignee: California Institute of Technology
    Inventors: Mani Hossein-Zadeh, Kerry J. Vahala
  • Patent number: 7947589
    Abstract: A semiconductor process and apparatus provide a FinFET device by forming a second single crystal semiconductor layer (19) that is isolated from an underlying first single crystal semiconductor layer (17) by a buried insulator layer (18); patterning and etching the second single crystal semiconductor layer (19) to form a single crystal mandrel (42) having vertical sidewalls; thermally oxidizing the vertical sidewalls of the single crystal mandrel to grow oxide spacers (52) having a substantially uniform thickness; selectively removing any remaining portion of the single crystal mandrel (42) while substantially retaining the oxide spacers (52); and selectively etching the first single crystal semiconductor layer (17) using the oxide spacers (52) to form one or more FinFET channel regions (92).
    Type: Grant
    Filed: September 2, 2009
    Date of Patent: May 24, 2011
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Ramachandran Muralidhar, Marwan H. Khater
  • Publication number: 20110116347
    Abstract: The invention relates to a resonator (11) with a balance (13) and balance spring (15) including a balance (13) mounted on a staff (17), a balance spring (15) integral with a collet (14) and mounted on said staff. According to the invention, the collet (14) includes an integral protruding portion or bump (16) forming a pin arranged for cooperating with an escape system. The invention concerns the field of timepiece movements.
    Type: Application
    Filed: November 15, 2010
    Publication date: May 19, 2011
    Applicant: NIVAROX-FAR S.A.
    Inventors: Philomène Berger, Emmanuel Graf, Daniel Mallet, Frédéric Vaucher, Pierre Cusin
  • Patent number: 7938975
    Abstract: A method of etching a semiconductor substrate. The method includes the steps of applying a photoresist etch mask layer to a device surface of the substrate. A select first area of the photoresist etch mask is masked, imaged and developed. A select second area of the photoresist etch mask layer is irradiated to assist in post etch stripping of the etch mask layer from the select second area. The substrate is etched to form fluid supply slots through a thickness of the substrate. At least the select second area of the etch mask layer is removed from the substrate, whereby mask layer residue formed from the select second area of the etch mask layer is significantly reduced.
    Type: Grant
    Filed: July 19, 2007
    Date of Patent: May 10, 2011
    Assignee: Lexmark International, Inc.
    Inventors: John W. Krawczyk, James M. Mrvos, Girish S. Patil, Jason T. Vanderpool, Brian C. Hart, Christopher J. Money, Jeanne M. Saldanha Singh, Karthik Vaideeswaran
  • Patent number: 7939355
    Abstract: An accelerometer and a method of fabricating an integrated accelerometer comprises the steps of providing an SOI wafer with a selected resistivity to eliminate any need for additional doping of the SOI wafer, providing a single mask on the SOI wafer, and simultaneously defining all components of the accelerometer in the SOI wafer without using any pn-junctions to define any piezoresistive components and to provide the same resistivity of all components. The step of simultaneously defining all components of the accelerometer in the SOI wafer comprises defining all components of a linear or angular accelerometer.
    Type: Grant
    Filed: September 29, 2006
    Date of Patent: May 10, 2011
    Assignee: The Regents of the University of California
    Inventors: Erik J. Eklund, Andrei M. Shkel
  • Publication number: 20110103197
    Abstract: The invention relates to a one-piece regulating member including a balance cooperating with a hairspring made in a layer of silicon-based material and including a balance spring coaxially mounted on a collet. According to the invention, the collet includes one extending part that projects from the balance spring and which is made in a second layer of silicon-based material and is secured to the balance.
    Type: Application
    Filed: March 13, 2009
    Publication date: May 5, 2011
    Applicant: NIVAROX-FAR S.A.
    Inventors: Pierre-André Bühler, Marco Verardo, Thierry Conus, Jean-Philippe Thiébaud, Jean-Bernard Peters, Pierre Cusin
  • Patent number: 7935556
    Abstract: A micro electromechanical system and a fabrication method thereof, which has trenches formed on a substrate to prevent circuits from interfering each other, and to prevent over-etching of the substrate when releasing a microstructure.
    Type: Grant
    Filed: August 27, 2007
    Date of Patent: May 3, 2011
    Assignee: Memsmart Semiconductor Corp.
    Inventors: Li-Ken Yeh, I-Hsiang Chiu
  • Patent number: 7931844
    Abstract: An imprint lithography apparatus is disclosed which has a needle, and a substrate table arranged to hold a substrate to be imprinted, wherein the needle is moveable between a first position and a second position, the first position being such that in use the needle penetrates a layer of imprintable material on the substrate, and the second position being such that in use the needle is disengaged from the imprintable material on the substrate, the substrate table and the needle arranged such that one may be scanned relative to the other.
    Type: Grant
    Filed: September 23, 2008
    Date of Patent: April 26, 2011
    Assignee: ASML Netherlands B.V.
    Inventor: Joeri Lof
  • Patent number: 7922922
    Abstract: An object of this invention is to provide a manufacturing method that, by using a general-purpose semiconductor fabrication process, can easily manufacture an ink jet print head in which energy generating elements are complicatedly installed in the ink path. To this end, the present invention comprising steps of providing a substrate having a removal projected portion, forming an energy generating element along the projected portion, forming a supporting member on the energy generating element, and forming a ink chamber by removing the projected portion from the substrate.
    Type: Grant
    Filed: November 5, 2007
    Date of Patent: April 12, 2011
    Assignee: Canon Kabushiki Kaisha
    Inventor: Masaya Uyama
  • Patent number: 7925125
    Abstract: A microfluidic detection device provides reduced dispersion of axial concentration gradients in a flowing sample. The microfluidic detection device includes a cell body and a flow path through the cell body. The flow path has an inlet segment, an outlet segment, and a central segment, which forms a detection cell. The central segment is located between and at an angle with both the inlet segment and the outlet segment. The central segment has a first junction with the inlet segment and a second junction with the outlet segment. The cell body contains two arms that can transmit light to and from the detection cell. At least a portion of a first arm is located in the first junction and at least a portion of a second arm is located in the second junction. The portions of the arms located in the junctions are situated so that fluid entering or exiting the central segment of the flow path flows around the outer surface of one of the portions.
    Type: Grant
    Filed: February 12, 2008
    Date of Patent: April 12, 2011
    Assignee: DH Technologies Development Pte. Ltd.
    Inventors: Douglas R. Cyr, Roger L. Farrow, Don W. Arnold
  • Patent number: 7919006
    Abstract: A method for making a MEMS structure comprises patterning recesses in a dielectric layer overlying a substrate, each recess being disposed between adjacent mesas of dielectric material. A conformal layer of semiconductor material is formed overlying the recesses and mesas. The conformal layer is chemical mechanically polished to form a chemical mechanical polished surface, wherein the chemical mechanical polishing is sufficient to create dished portions of semiconductor material within the plurality of recesses. Each dished portion has a depth proximate a central portion thereof that is less than a thickness of the semiconductor material proximate an outer portion thereof. A semiconductor wafer is then bonded to the chemical mechanical polished surface. The bonded semiconductor wafer is patterned with openings according to the requirements of a desired MEMS transducer. Lastly, the MEMS transducer is released.
    Type: Grant
    Filed: October 31, 2007
    Date of Patent: April 5, 2011
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Woo Tae Park, Hemant D. Desai
  • Patent number: 7916986
    Abstract: An erbium (Er)-doped silicon (Si) nanocrystalline embedded silicon oxide (SiOx) waveguide and associated fabrication method are presented. The method provides a bottom layer, and forms an Er-doped Si nanocrystalline embedded SiOx film waveguide overlying the bottom layer, having a minimum optical attenuation at about 1540 nanometers (nm). Then, a top layer is formed overlying the Er-doped SiOx film. The Er-doped SiOx film is formed by depositing a silicon rich silicon oxide (SRSO) film using a high density plasma chemical vapor deposition (HDPCVD) process and annealing the SRSO film. After implanting Er+ ions, the Er-doped SiOx film is annealed again. The Er-doped Si nanocrystalline SiOx film includes has a first refractive index (n) in the range of 1.46 to 2.30. The top and bottom layers have a second refractive index, less than the first refractive index.
    Type: Grant
    Filed: April 30, 2008
    Date of Patent: March 29, 2011
    Assignee: Sharp Laboratories of America, Inc.
    Inventors: Hao Zhang, Pooran Chandra Joshi, Apostolos T. Voutsas
  • Patent number: 7913544
    Abstract: The present invention is directed to scanning probes in which a cantilever contacts a stylus via an integrated stylus base pad, and methods for fabricating such probes. The probe offer many advantages over other types of scanning probes with respect to eliminating the need for a soft, reflective coating in some applications and providing for the simple fabrication of sharp stylus tips, flexibility with respect to functionalizing the tip, and minimal thermal drift due to reduced bimorph effect. The advantage of these features facilitates the acquisition of high resolution images of samples in general, and particularly in liquids.
    Type: Grant
    Filed: November 15, 2007
    Date of Patent: March 29, 2011
    Assignee: Applied NanoStructures, Inc.
    Inventor: Ami Chand
  • Patent number: 7895885
    Abstract: Methods and systems for constructing microfabricated devices including a microknife and methods and devices for a three-dimensional microstructure constructed from a plurality of separable planar components using one or more microfabrication techniques and optionally using one or more interlock structures.
    Type: Grant
    Filed: April 11, 2006
    Date of Patent: March 1, 2011
    Assignee: The Regents of the University of California
    Inventors: David Sretavan, Chris Keller
  • Publication number: 20110045582
    Abstract: Method and systems that provide improved cell handling and assays in microfluidic systems and devices particularly using lateral cell trapping and methods of fabrication of the same.
    Type: Application
    Filed: March 14, 2005
    Publication date: February 24, 2011
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Luke P. Lee, Jeonggi Seo, Cristian Ionescu-Zanetti, Michelle Khine, Poorya Sabounchi, Robin Shaw
  • Patent number: 7892440
    Abstract: The present invention illustrates a bulk silicon etching technique that yields straight sidewalls, through wafer structures in very short times using standard silicon wet etching techniques. The method of the present invention employs selective porous silicon formation and dissolution to create high aspect ratio structures with straight sidewalls for through wafer MEMS processing.
    Type: Grant
    Filed: July 26, 2007
    Date of Patent: February 22, 2011
    Assignee: University of South Florida
    Inventors: Shekhar Bhansali, Abdur Rub Abdur Rahman, Sunny Kedia
  • Publication number: 20110027407
    Abstract: An imprint template is provided with a shallower field bordering the patterned region. The shallower field can be formed with additional lithography/etch steps after (or before) the formation of the features in the patterned region. The template is used to establish a thin film pattern with a field thickness that is shallower than the pattern. A shallower field bordering the patterned region alleviates sidewall re-deposition during ion mill. In a planarization/etch-back process, a thinner field helps to achieve a flat top surface by compensating for the thickness variation caused by different filling ratios. Fabrication of the recessed field template comprises a multi-step patterning process. The initial patterns are formed using a convention fabrication process.
    Type: Application
    Filed: July 28, 2009
    Publication date: February 3, 2011
    Applicant: Seagate Technology LLC
    Inventors: Kim Yang Lee, David S. Kuo, Zhaoning Yu
  • Patent number: 7875193
    Abstract: A method for manufacturing a probe structure of a probe card is disclosed. In accordance with the present invention, a portion of a substrate exposed through a crossing region of one more probe beam regions defined by a first mask layer pattern and a windows defined by a second mask layer pattern are etched to form one or more self-aligning probe tip regions, thereby preventing a misalignment of the one or more probe tip regions.
    Type: Grant
    Filed: June 8, 2007
    Date of Patent: January 25, 2011
    Assignee: UniTest Inc.
    Inventors: Bong Hwan Kim, Jong Bok Kim, Bum Jin Park
  • Patent number: 7875194
    Abstract: Disclosed is a method for manufacturing a hydrogen sensor using Pd nano-wires. The method includes steps of forming an external electrode pattern on a substrate applying a first resin layer to the substrate and forming a resin layer nano-channel pattern; depositing Pd on the substrate having the nano-channel pattern, by sputtering, and removing the first resin layer to form Pd nano-wires; applying a second resin layer to the substrate having the Pd nano-wires, and forming a resin layer pattern on the external electrode pattern, at opposing ends of the Pd nano-wires, and at predetermined positions between the external electrode pattern and the opposing ends of the Pd nano-wires; and depositing conductive metal on the resin layer pattern and removing the resin layer pattern, thereby electrically connecting the external electrode pattern to the Pd nano-wires.
    Type: Grant
    Filed: December 19, 2007
    Date of Patent: January 25, 2011
    Assignee: Industry - Academic Cooperation Foundation, Yonsei University
    Inventors: Woo Young Lee, Kye Jin Jeon, Eun Song Yi Lee
  • Patent number: 7871936
    Abstract: A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.
    Type: Grant
    Filed: July 16, 2008
    Date of Patent: January 18, 2011
    Assignee: Semiconductor Energy laboratory Co., Ltd.
    Inventors: Masaya Kadono, Shunpei Yamazaki, Yukio Yamauchi, Hidehito Kitakado
  • Patent number: 7871529
    Abstract: Novel applications of nanocoil technology and novel methods of fabricating nanocoils for use in such applications and others. Such applications include microscopic electro-mechanical systems (MEMS) devices including nanocoil mirrors, nanocoil actuators and nanocoil antenna arrays. Inductors or traveling wave tubes fabricated from nanocoils are also included. A method for fabricating nanocoils with a desired pitch includes determining a desired pitch for fabricated nanocoil, selecting coiling arm orientation in which coiling arm orientation is arm angle between coiling arm an crystalline orientation of underlying substrate, whereby coiling arm orientation affects pitch of fabricated nanocoil, patterning coiling arm structure with selected coiling arm orientation, and, releasing coiling arm, whereby fabricated nanocoil is formed.
    Type: Grant
    Filed: January 26, 2010
    Date of Patent: January 18, 2011
    Assignee: Northrop Grumman Systems Corporation
    Inventors: Garrett A. Storaska, Robert S. Howell
  • Patent number: 7867405
    Abstract: A process for producing a multiplicity of microfluidic arrangements from a plate-shaped composite structure and an atomiser which is provided with such nozzle arrangements is proposed. Each arrangement has a groove structure which forms flow channels and the dimensions of which are in the micrometer range. The lines for optional subsequent mechanical separation of bridging groove structures are joined to each other and are partly or completely filled with a filling medium before mechanical machining. The medium is selected so that it is not removed from the groove structures either by the mechanical machining or by aids used during mechanical machining. Afterwards, however, the filling medium is removed from the groove structures by suitable measures. The groove structures are thereby prevented from becoming blocked due to mechanical contaminants.
    Type: Grant
    Filed: July 13, 2004
    Date of Patent: January 11, 2011
    Assignee: Boehringer Ingelheim Pharma GmbH & Co. KG
    Inventors: Michael Spitz, Holger Reinecke
  • Patent number: 7862732
    Abstract: In a method for forming micro lenses, a lens material layer made of an inorganic material is formed on a substrate, and an intermediate layer made of an organic material is formed on the lens material layer. Then, a mask layer made of an organic material is formed on the intermediate layer, and lens shapes are formed in the mask layer. The lens shapes of the mask layer are transcribed to the intermediate layer by etching the mask layer and the intermediate layer. Thereafter, the lens shapes of the intermediate layer are transcribed to the lens material layer to form micro lenses by etching the intermediate layer and the lens material layer using a processing gas containing SF6 gas and CHF3 gas.
    Type: Grant
    Filed: June 12, 2007
    Date of Patent: January 4, 2011
    Assignee: Tokyo Electron Limited
    Inventor: Hiroki Amemiya
  • Patent number: 7862731
    Abstract: To form an isolation structure in a semiconductor substrate, at least two trenches are formed with a rib therebetween in the semiconductor substrate, and then the semiconductor material in the area of the trenches and particularly the rib is converted to an electrically insulating material. For example, this is accomplished by thermal oxidation of silicon semiconductor material of the rib.
    Type: Grant
    Filed: September 12, 2003
    Date of Patent: January 4, 2011
    Assignee: Conti Temic microelectronic GmbH
    Inventors: Matthias Aikele, Albert Engelhardt, Marcus Frey, Bernhard Schmid, Helmut Seidel
  • Patent number: 7850861
    Abstract: A method of making a microfluidic device is provided. The method features patterning a permeable wall on a substrate, and surrounding the permeable wall with a solid, non-permeable boundary structure to establish a microfluidic channel having a cross-sectional dimension less than 5,000 microns and a cross-sectional area at least partially filled with the permeable wall so that fluid flowing through the microfluidic channel at least partially passes through the permeable wall.
    Type: Grant
    Filed: June 18, 2007
    Date of Patent: December 14, 2010
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventor: Eric W. Wong
  • Publication number: 20100296986
    Abstract: A microscreen and its production method for filtering particles in microfluidics applications. The microscreen includes an at least regionally p-doped Si substrate having a recess, a macroporous membrane connected to the Si substrate via n-doped regions, the recess of the Si substrate being situated directly under the membrane to form a cavity.
    Type: Application
    Filed: July 13, 2007
    Publication date: November 25, 2010
    Inventor: Ando Feyh
  • Patent number: 7833405
    Abstract: A micromechanical component is described which includes a substrate; a monocrystalline layer, which is provided above the substrate and which has a membrane area; a cavity that is provided underneath the membrane area; and one or more porous areas, which are provided inside the monocrystalline layer and which have a doping that is higher than that of the surrounding layer.
    Type: Grant
    Filed: December 13, 2001
    Date of Patent: November 16, 2010
    Assignee: Robert Bosch GmbH
    Inventors: Hubert Benzel, Heribert Weber, Hans Artmann, Frank Schaeffer
  • Patent number: 7833425
    Abstract: A method of forming an array of selectively shaped optical elements on a substrate, the method including the steps of providing the substrate, the substrate having an optical layer placed thereon; placing a layer of particles on the optical layer; performing an etching cycle. The cycle includes the steps of: etching the layer of particles, using a first etching process so as to reduce the size of the particles within the layer, then; simultaneously etching the optical layer and the layer of particles, using a second etching process, the further reducing particles forming a mask over areas of the optical layer to create discrete optical elements from the optical layer.
    Type: Grant
    Filed: August 22, 2007
    Date of Patent: November 16, 2010
    Assignee: Agency for Science, Technology and Research
    Inventors: Benzhong Wang, Soo Jin Chua
  • Patent number: 7828981
    Abstract: A semiconductor probe with a high-resolution tip and a method of fabricating the same are provided. The semiconductor probe includes: a cantilever doped with a first impurity; a resistive convex portion projecting from an end portion of the cantilever and lightly doped with a second impurity opposite in polarity to the first impurity; and first and second electrode regions formed on either side of the resistive convex portion and heavily doped with the second impurity.
    Type: Grant
    Filed: August 8, 2007
    Date of Patent: November 9, 2010
    Assignees: Samsung Electronics Co., Ltd., Seoul National University Industry Foundation
    Inventors: Ju-hwan Jung, Jun-soo Kim, Hyung-cheol Shin, Seung-bum Hong
  • Patent number: 7829364
    Abstract: A suspension microstructure and its fabrication method, in which the method comprises the steps of: forming at least one insulation layer with inner micro-electro-mechanical structures on an upper surface of a silicon substrate, the micro-electro-mechanical structure includes at least one microstructure and a plurality of metal circuits that are independent from each other, the micro-electro-mechanical structures have an exposed portion on the surface of the insulation layer, and the exposed portion is provided with through holes or stacked metal-via layers correspondingly to the predetermined etching spaces of the micro-electro-mechanical structures, the above predetermined etching spaces and the stacked metal-via layers only penetrate the insulation layer; forming a photoresist with an opening on the upper surface of the exposed portion, and the opening of the photoresist is located outside all the through holes or the stacked metal-via layers; subsequently, conducting etching to realize the suspension of t
    Type: Grant
    Filed: October 2, 2008
    Date of Patent: November 9, 2010
    Assignee: MEMSMART Semiconductor Corporation
    Inventor: Siew-Seong Tan