Abstract: A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can include a first conductive type semiconductor layer, a luminescent layer, a second conductive type semiconductor layer, and first and second electrodes disposed to make contact with the first and second conductive type semiconductor layers, respectively. The first conductive type semiconductor layer, the luminescent layer, and the second conductive type semiconductor layer can be laminated in order from the side adjacent the substrate. An end face of the semiconductor layer can include a first terrace provided in an end face of the first conductive type semiconductor layer in parallel with the substrate surface, and an inclined end face region provided nearer to the substrate than the first terrace.

Abstract: A method for releasing from underlying substrate material micromachined structures or devices without application of chemically aggressive substances or excessive forces. The method starts with the step of providing a partially formed device, comprising a substrate layer, a sacrificial layer deposited on the substrate, and a function layer deposited on the sacrificial layer and possibly exposed portions of the substrate layer and then etched to define micromechanical structures or devices therein. The etching process exposes the sacrificial layer underlying the removed function layer material. Next there are the steps of cleaning residues from the surface of the device, and then directing high-temperature hydrogen gas over the exposed surfaces of the sacrificial layer to convert the silicon dioxide to a gas, which is carried away from the device by the hydrogen gas.

Abstract: An erbium (Er)-doped silicon (Si) nanocrystalline embedded silicon oxide (SiOx) waveguide and associated fabrication method are presented. The method provides a bottom layer, and forms an Er-doped Si nanocrystalline embedded SiOx film waveguide overlying the bottom layer, having a minimum optical attenuation at about 1540 nanometers (nm). Then, a top layer is formed overlying the Er-doped SiOx film. The Er-doped SiOx film is formed by depositing a silicon rich silicon oxide (SRSO) film using a high density plasma chemical vapor deposition (HDPCVD) process and annealing the SRSO film. After implanting Er+ ions, the Er-doped SiOx film is annealed again. The Er-doped Si nanocrystalline SiOx film includes has a first refractive index (n) in the range of 1.46 to 2.30. The top and bottom layers have a second refractive index, less than the first refractive index.

Abstract: The present invention provides means and methods for producing surface-activated semiconductor nanoparticles suitable for in vitro and in vivo applications that can fluoresce in response to light excitation. Semiconductor nanostructures can be produced by generating a porous layer in semiconductor substrate comprising a network of nanostructures. Prior or subsequent to cleavage from the substrate, the nanostructures can be activated by an activation means such as exposing their surfaces to a plasma, oxidation or ion implantation. In some embodiments, the surface activation renders the nanostructures more hydrophilic, thereby facilitating functionalization of the nanoparticles for either in vitro or in vivo use.

Abstract: A method of fabricating a diaphragm of a capacitive microphone device is provided. First, a substrate is provided, and a dielectric layer is formed on a first surface of the substrate. Than, a plurality of silicon spacers are formed on a surface of the dielectric layer, and the dielectric layer is patterned to form a plurality of dielectric bumps. Subsequently, a diaphragm layer is formed on a surface of the silicon spacers, a surface of the dielectric bumps, and the first surface of the substrate so that the diaphragm layer has a corrugate structure by virtue of the dielectric bumps. Thereafter, a planarization layer is formed on the diaphragm layer, and a second surface of the substrate is etched to form a plurality of openings corresponding to the corrugate structure. Following that, the dielectric bumps exposed through the openings are removed, and the planarization layer is removed.

Abstract: A method for manufacturing carbon nanotubes with a desired length includes the steps of: providing an array of carbon nanotubes; placing a mask having at least an opening defined therein on the array of carbon nanotubes, with at least one portion of the array of carbon nanotubes being at least partially exposed through a corresponding opening of the mask; forming a protective film on at least one exposed portion of the array of carbon nanotubes; removing the mask from the array of the carbon nanotubes, with the carbon nanotubes being compartmentalized into at least a first portion covered by the protective film and at least one uncovered second portion; breaking/separating the first portion from the second portion of the array of the carbon nanotubes using a chemical method, thereby obtaining at least a carbon nanotube segment with a protective film covered thereon; and removing the protective film from the carbon nanotube segment.

Abstract: A scanning probe where the micromachined pyramid tip is extended by the growth of an epitaxial nanowire from the top portion of the tip is disclosed. A metallic particle, such as gold, may terminate the nanowire to realize an apertureless near-field optical microscope probe.

Abstract: In a dry etching method in which clusters formed by agglomeration of atoms or molecules are ionized and accelerated as a cluster ion beam for irradiation of an object surface to etch away therefrom its constituent atoms, the clusters are mixed clusters 42 formed by agglomeration of two or more kinds of atoms or molecules, and the mixed clusters 42 contain atoms 43 of at least one of argon, neon, xenon and krypton, and a component 44 that is deposited on the object surface to form a thin film by reaction therewith. With this method, it is possible to provide an extremely reduced sidewall surface roughness and high vertical machining accuracy.

Abstract: A method of fabricating a mask which can endure use for a long time and can be used for forming an isolated pattern with a high aspect ratio. The method includes the steps of: forming a soft material layer by disposing a soft material having positive photo sensitivity and adhesion or adhesiveness on a material as a target of machining; forming a hard material layer by disposing an opaque hard material in which a desired mask pattern has been formed in advance on the soft material layer; and forming the mask pattern in the soft material layer by performing exposure to light and development on the soft material layer by using the hard material layer as a photomask.

Abstract: A method of micro- and nanotexturing of various solid surfaces in plasma where carbon nanotubes are used as an etch mask. The method allows obtaining textures with feature sizes that can be controlled with the nanotube dimensions and the density of coating the treated surface.

Abstract: A substrate defining a cavity comprising a wide, shallow first portion and a narrow, deep second portion is provided. The first portion of the cavity extends into the substrate from the front side of the substrate and is filled with sacrificial material. The second portion extends deeper into the substrate from the first portion. A device structure is fabricated over the sacrificial material. A release etchant is introduced from the back side of the substrate via the second portion of the cavity to remove from the first portion of the cavity the sacrificial material underlying the device structure. Removing from the first portion of the cavity the sacrificial material underlying the device structure by introducing the release etchant from the back side of the substrate via the second portion of the cavity allows the release etch to be performed without exposing the device structure to the release etchant.

Abstract: A tuning-fork crystal wafer 1A which has legs 11, 12 with grooves 11c, 12c is shaped by etching of a crystal substrate 2. To improve processing precision of the depth of the grooves 11c, 12c, the width of the grooves 11c, 12c is set in advance, based on the etch stop technique in which the amount of etching depends on the pattern of an etch portion. Consequently, as far as the etch time satisfies a required minimum time, it is possible to obtain the depth as designed.

Abstract: The invention relates to a method of fabricating a microneedle array in a substrate, a drug delivery device comprising one or more microneedles extending upwards from the front surface of the substrate, the microneedles having a generally conical-shaped body defined by a plurality of surfaces sloping upwards from a relatively broad base to a tip, and one or more substances coating the microneedles, the one or more substances being operable to be administered to a patient, wherein the tips of the one or more microneedles are sufficiently sharp to penetrate an outer layer of the skin of the patient, and a method of administering one or more substances to a patient using the device.

Abstract: A micro movable device includes a base substrate, a fixed portion bonded to the base substrate, a movable portion having a fixed end connected to the fixed portion and extending along the base substrate, and a piezoelectric drive provided on the movable portion and the fixed portion on a side opposite to the base substrate. The piezoelectric drive has a laminate structure provided by a first electrode film contacting the movable portion and the fixed portion, a second electrode film and a piezoelectric film between the first and the second electrode films. At least one of the movable portion and the fixed portion is provided with a groove extending along the piezoelectric drive.

Abstract: Microreactor for carrying out methanol reforming for hydrogen production. The microreactor consists of a network of catalyst-packed parallel microchannels of cross-sectional dimensions from 400 to 1000 micrometers with a catalyst particle filter near the outlet fabricated by micromachining techniques, e.g., using photolithography and deep-reactive ion etching (DRIE) on a silicon substrate. Microchannel and filter capping, on-chip heating and temperature sensing, introduction and trapping of catalyst particles in the microchannels, flow distribution, microfluidic interfacing and thermal insulation are features of the microreactor. Another microreactor consists of a radial-flow configuration utilizing a annular shaped catalyst zone for carrying out reactions between gases introduced into the microreactor as the gases flow from an inner circular boundary to an outer circular boundary in a radial direction.

Abstract: A process for constructing a micro-electro-mechanical system (MEMS) device includes etching the topside of a wafer to form a first support layer having short stationary comb teeth extending from one or more support pads. The backside of the wafer is etched to form a top layer with a mirror, beam structures extending from the mirror, long rotating comb teeth extending from the beam structures, and long stationary comb teeth extending from stationary pads. The long rotating comb teeth are interdigitated in-plane with the long stationary comb teeth, and the long rotating comb teeth are interdigitated out-of-plane at their tips with the short stationary comb teeth. Asymmetry in the overlap between the long rotating comb teeth and the short stationary comb teeth allows the rotational direction of the mirror to be determined from capacitance measurements. Furthermore, the short stationary comb teeth can be used to initiate oscillation of the mirror.

Abstract: Methods of forming a fluid channel in a semiconductor substrate may include applying a material layer to at least one surface of the semiconductor substrate. The method may further include manipulating the material layer to form a surface topography corresponding to a channel, the surface topography being configured to control directionality of ion bombardment of said substrate along electromagnetic field lines in a plasma sheath coupled to said surface topography.

Abstract: Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations.

Abstract: A method of fabricating a micro actuator is provided including a media stage having a media loading surface and a coil for driving the media stage, formed on the opposite surface of the media stage to the media loading surface. The method includes forming a groove on a first surface of a first substrate, forming a coil on a first surface of a second substrate, bonding the first surface of the first substrate to the first surface of the second substrate, and forming the media loading surface on a second surface of the second substrate, which is opposite the first surface of the second substrate.

Abstract: Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations.

Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of fabricating or manufacturing MEMS having mechanical structures that operate in controlled or predetermined mechanical damping environments. In this regard, the present invention encapsulates the mechanical structures within a chamber, prior to final packaging and/or completion of the MEMS. The environment within the chamber containing and/or housing the mechanical structures provides the predetermined, desired and/or selected mechanical damping. The parameters of the encapsulated fluid (for example, the gas pressure) in which the mechanical structures are to operate are controlled, selected and/or designed to provide a desired and/or predetermined operating environment.

Abstract: The present invention discloses a method for processing a deformable element of a microstructure for reducing the plastic deformation by oxidizing the deformable element. The method of the present invention can be performed at a variety of stages of the fabrication and packaging processes.

Abstract: Methods of extracting a TEM sample from a substrate include milling a hole on the sample and inserting a probe into the hole. The sample adheres to the probe, and can be processed on transferred while on the probe. In another embodiment, the sample is freed from a substrate and adheres to a probe by electrostatic attraction. The sample is placed onto a TEM sample holder in a vacuum chamber.

Abstract: Disclosed is a method for manufacturing a conductive organic thin film device. An air-bridge type of an upper electrode is formed over a lower electrode by using a sacrificial layer and then a gap having a thickness of several nano meter is formed in a part at which the upper electrode and the lower electrode intersect by removing the sacrificial layer. The conductive organic molecules are uniformly adsorbed between the upper electrode and the lower electrode of the nano gap. Adsorption extent of the conductive organic molecules is confirmed by observing a current flowing through the upper and lower electrodes when the conductive organic molecules are adsorbed. Thus, reproducibility of a manufacturing process is improved and mass production is facilitated by adoption of a standardized process.

Abstract: A method for manufacturing an electronic component includes preparing an element substrate having a function section for providing a function of an electronic component, and an external-connection electrode; bonding a low-sandblast-resistant case plate to the element substrate through a high-sandblast-resistant adhesive layer; forming, by sandblast processing, a hole in the case plate above the external-connection electrode so that the adhesive layer is exposed to the outside; removing, by etching, an adhesive layer portion that is exposed in the hole; forming an electrode film so as to be electrically connected to the exposed external-connection electrode; and forming, by mechanical machining, a projection having a leading end surface on which a terminal electrode resulting from the electrode film is defined.

Abstract: The invention pertains to a process for the production of particle beam systems (10-10??, 12-12?), in which at least one first particle beam system (10-10??) is produced on a first substrate (14) by computer-guided particle beam-induced deposition, and the minimum of one first particle beam system (10-10??) is used to produce at least one second particle beam system (12-12?) on at least one second substrate (16) by computer-guided particle beam-induced deposition. The inventive process makes it possible to produce a large number of particle beam systems in a relatively short time.

Abstract: A method for manufacturing a resonator of the present invention includes the steps of (a) forming a resonator film including a piezoelectric film made of piezoelectric material and (b) preparing a resonator substrate for supporting the resonator film. The method further comprises the step of (c) bonding the resonator film formed in the step (a) and the resonator substrate prepared in the step (b).

Abstract: This invention provides free-standing structures, functionalized free-standing structures and functional devices that are flexible, including nano- and micromachined flexible fabrics comprising woven networks and mesh networks. The present invention provides processing methods for making and functionalizing flexible free-standing structures having a wide range of integrated materials, devices and device components. The methods of the present invention are capable of providing large area functional electronic, optoelectronic, fluidic, and electromechanical devices and device arrays which exhibit good device performance in stretched, bent and/or deformed configurations.

Abstract: The invention includes methods of forming reticles configured for imprint lithography, methods of forming capacitor container openings, and methods in which capacitor container openings are incorporated into DRAM arrays. An exemplary method of forming a reticle includes formation of a radiation-imageable layer over a material. A lattice pattern is then formed within the radiation-imageable layer, with the lattice pattern defining a plurality of islands of the radiation-imageable layer. The lattice-patterned radiation-imageable layer is utilized as a mask while subjecting the material under the lattice-patterned layer to an etch which transfers the lattice pattern into the material. The etch forms a plurality of pillars which extend only partially into the material, with the pillars being spaced from one another by gaps. The gaps are subsequently narrowed with a second material which only partially fills the gaps.

Abstract: A method is disclosed for forming a single crystal cantilever and tip on a substrate. The method can include the operation of defining an implant area on the substrate with a layer of photoresist. A further operation can be implanting oxygen into the substrate in the implant area to a predetermined depth to form a buried oxide layer. The buried oxide layer can define a bottom of the single crystal cantilever and tip. Another operation can involve shaping the single crystal cantilever and tip from the substrate above the buried oxide layer.

Abstract: An electrostatic actuator for increasing a swing (deflection angle) of a movable structure includes a laminate substrate in which a thin film silicon layer is formed on a silicon substrate through a buried insulating film and a torsion beam movable structure constructed with the thin film silicon layer. A potential difference is generated between a movable side comb-tooth electrode of the movable structure and a fixed side comb-tooth electrode disposed to face the movable side comb-tooth electrode to swing the movable structure. The fixed side comb-tooth electrode is formed in the inside of a through hole bored through the laminate substrate.

Abstract: A method suitable for etching hydrophilic trenches into a substrate, such as silicon, is provided. The method comprises etching and sidewall passivation processes for achieving anisotropy. Sidewalls of the etched trench are made hydrophilic during the etch by virtue of a hydrophilizing dopant in a passivating gas plasma. The method is useful for etching ink supply channels in inkjet printheads.

Abstract: The present invention disclosure relates to the use of a silicon substrate with a thin film membrane as a transparent substrate for the imaging of biological- and material-related specimens using a microscope such as a transmission electron microscope (TEM). More specifically, the present invention relates to an improved substrate design that incorporates the fabrication of a circular shape that allows easier insertion into traditional specimen holders used in TEMs. In addition to an improved shape, the present invention incorporates microscopic surface texture on the gripping surface that assists in handling. The invention also encompasses surface modification techniques for enhanced biocompatibility of the thin film membrane for biomedical applications.

Abstract: A method of fabricating a turning mirror for an optical device includes the steps of depositing on a substrate, which defines a plane in which an optical signal propagates in a propagating direction, a photoresist layer sensitive to electrons and to UV radiation. The material in which the photoresist layer is formed, has a contrast not larger than 3. A first portion of the photoresist layer is exposed to an electron beam, wherein the electron dose of the electron beam exposure is varied within the first portion according to a selected pattern, and wherein the electron does to which a given region in the photoresist is exposed, depends on the resulting photoresist height in the given region after development. A second portion of the photoresist layer is exposed to UV radiation; the first and the second portions are overlapped at least in a third portion.

Abstract: A method is for producing a semiconductor component, e.g., a multilayer semiconductor element, e.g., a micromechanical component, e.g., a pressure sensor, having a semiconductor substrate, e.g., made of silicon, and a semiconductor component produced according to the method. To reduce the production cost of such a semiconductor component, in a first step a first porous layer is produced in the semiconductor component, and in a second step a hollow or cavity is produced under or from the first porous layer in the semiconductor component, with the hollow or cavity capable of being provided with an external access opening.

Abstract: The present invention provides a mask blank used for the charged particle beam exposure made by employing an SOI substrate having a silicon membrane higher reliability in quality, without the problem of deformation due to the compression stress of a silicon oxide film as an intermediate layer of the SOI substrate, and provides a method for forming a mask blank and a mask used for the charged particle beam exposure. The mask blank used for the charged particle beam exposure made by employing an SOI substrate having a front-side silicon membrane and a back-side silicon layer with a silicon oxide layer interposed therebetween is characterized in that the back-side silicon layer and the silicon oxide film of said SOI substrate are partially removed to form an opening to be an exposed region and an etching stop layer having lower stress is formed in the opening.

Abstract: A process for etching a sacrificial layer of a structure. The structure is exposed to a plasma derived from nitrogen trifluoride for etching the sacrificial layer. The process is selective in that it etches titanium-nitride and titanium but does not affect adjacent silicon dioxide or aluminum layers. Applications of the process include the formation of integrated circuit structures and MEMS structures.

Abstract: A method of manufacturing a microelectromechanical device includes forming at least two conductive layers on a substrate. An isolation layer is formed between the two conductive layers. The conductive layers are electrically coupled together and then the isolation layer is removed to form a gap between the conductive layers. The electrical coupling of the layers mitigates or eliminates the effects of electrostatic charge build up on the device during the removal process.

Abstract: The invention relates to G protein-coupled receptor (GPCR) microarrays on porous substrates for structural or functional analyses of GPCRs, and methods of preparing porous substrate surfaces for receiving membranes that comprise GPCRs. In one embodiment, a GPCR microarray of the invention comprises a membrane adhered to an upper surface of a porous substrate, the membrane spanning across a plurality of pores on the porous substrate to form a plurality of cavities having sufficient geometry to permit entry of assay reagents into each cavity, thereby allowing access of assay reagents to both sides of GPCR in the membrane.

Abstract: A silicon structure includes a silicon substrate; and an on-substrate structure including a silicon compound film and formed on said silicon substrate. At least one removal section removed through anisotropic etching and at least one supporting column left through the anisotropic etching to support said on-substrate structure are provided for a direct lower portion of said silicon substrate directly beneath said on-substrate structure.

Abstract: The present disclosure provides an apparatus, method of manufacturing an apparatus, and method for operation of the same. The apparatus, in one embodiment, includes an optical coupling structure disposed within a cladding region, wherein the optical coupling structure includes a first guiding portion and a second guiding portion. In this embodiment, the first guiding portion is located on a first plane and tapers from a first greater width to a first lesser width in a first direction. The second guiding portion, in turn, is located on a second different plane and tapers from a second greater width to a second lesser width in a second opposite direction.

Abstract: A two-step via cleaning process that removes metal polymer and oxide polymer residues from a via with substantially no damage to the via or underlying structures on a semiconductor substrate. The via is formed through a dielectric layer and a barrier layer that are disposed over a metal-containing trace, pad, or other such circuitry, wherein the metal-containing trace, pad, or other circuitry is disposed on a semiconductor substrate. When such a via is formed, the sidewalls of the via are coated with a residue layer. The residue layer generally has a distinct oxide polymer component and a distinct metal polymer component. The two-step cleaning process comprises first subjecting the residue layer to a nitric acid dip that removes the metal polymer component to expose the oxide polymer component. The oxide polymer component is then subjected to a phosphoric acid dip that removes the oxide polymer component.

Abstract: Waveguide(s) (130) including at least partially buried channels) (120) within substrate(s) (100) having at least one substantially planar surface (110) are disclosed. According to some embodiments at least part of the channel (120) is located beneath at least a portion of the substrate (100). According to some embodiments the waveguide channel (120) includes a substantially transparent core (140) and optional cladding (160) extending through the channel (120). Alternately, an inner surface of the channel (120) is highly reflective. Furthermore, structures for use as waveguides (130) and/or as microchannels for fluid flow are disclosed herein. Also disclosed are production methods for such waveguides and said structures (130) and said structures, and methods of using such waveguides (130).

Abstract: A method for manufacturing a flexural plate wave sensor, the method including the steps of depositing an etch-stop layer over a substrate, depositing a membrane layer over said etch stop layer, depositing a piezoelectric layer over said membrane layer, forming a comb pattern with drive teeth which span across an entire length of the piezoelectric layer on said piezoelectric layer, etching a cavity through the substrate, the cavity having substantially parallel interior walls, and removing a portion of the etch stop layer between the cavity and the membrane layer to expose a portion of the membrane layer.

Abstract: One embodiment disclosed relates to a method for sealing an active area of a non-silicon-based device on a wafer. The method includes providing a sacrificial material over at least the active area of the non-silicon-based device, depositing a seal coating over the wafer so that the seal coating covers the sacrificial material, and replacing the sacrificial material with a target atmosphere. Another embodiment disclosed relates to a non-silicon-based device sealed at the wafer level (i.e. prior to separation of the die from the wafer). The device includes an active area to be protected, a contact area, and a lithographically-formed structure sealing at least the active area and leaving at least a portion of the contact area exposed.

Abstract: A method of fabricating a silicon carbide imprint stamp is disclosed. A mold layer has a cavity formed therein. A spacer is formed in the cavity to reduce a first feature size of the cavity. A casting process is used to form a feature and a foundation layer connected with the feature. The spacer operatively reduces the first feature size of the feature to a second feature size that is less than the lithography limit. The foundation layer and the feature are unitary whole made from a material comprising silicon carbide (SiC), a material that is harder than silicon (Si) alone. Consequently, the silicon carbide imprint stamp has a longer service lifetime because it can endure several imprinting cycles without wearing out or breaking. The longer service lifetime makes the silicon carbide imprint stamp economically feasible to manufacture as the manufacturing cost can be recouped over the service lifetime.

Abstract: A method for manufacturing a probe structure of a probe card is disclosed. In accordance with the method of the present invention, a dual etching process of a silicon substrate or an etching process of an SOI substrates is carried out using a sidewall insulating film pattern as an etching mask to facilitate a formation of a bump and microscopic probe structure of the probe card.

Abstract: A process for constructing a micro-electro-mechanical system (MEMS) device includes etching the topside of a silicon wafer to form a first support layer having asymmetric pads. The backside of the silicon wafer is etched to form a top layer with a mirror, beam structures extending from the mirror, and rotating comb teeth extending from the beam structures. Before or after the backside of the silicon wafer is etched, the topside of the silicon wafer is bonded to a glass wafer that forms a second support layer. Prior to bonding the silicon wafer to the glass wafer, the glass wafer may be etched to form a recess and/or a cavity that accommodates mobile elements in the silicon wafer. Due to the asymmetry of the pads in the first support layer below the rotating comb teeth in the top layer, oscillation can be initiated.

Abstract: A method for making a SAW device package includes the steps of: forming a pattern of a metal layer, that defines transmitting and receiving transducers of a SAW die, on a wafer; forming a pattern of a first photo sensitive layer, which defines a peripheral wall of a cap of the SAW die, on the metal layer and the wafer through lithography techniques; forming a pattern of a second photo sensitive layer, which defines a cover wall of the cap of the SAW die, on the first photo sensitive layer through lithography techniques; curing the first and second photo sensitive layers; dicing the wafer into SAW dies; and encapsulating the SAW dies with a molding compound.

Abstract: A method for atomic layer deposition providing a dispenser unit used to prevent mixing of a precursor gas and an input gas. From the dispenser unit a flow of the input gas is provided over a surface of the workpiece wherein a beam of the electromagnetic radiation is directed into the input gas in close proximity to the surface of the workpiece, but spaced a finite distance therefrom. The input gas is dissociated by the beam producing a high flux point of use generated reactive gas species that reacts with a surface reactant formed on the surface of the workpiece by a direct flow of the precursor gas flown from the dispensing unit. The surface reactant and reactive gas species react to form a desired monolayer of a material on the surface of the workpiece.