By Optical Means Or Of An Optical Property Patents (Class 216/60)
  • Patent number: 10782237
    Abstract: Tracer gas sensing device comprising a gas discharge cell having cell walls defining a discharge volume and a tracer gas inlet into the discharge volume, an optical spectrometer arrangement having a radiation source on a first side of the discharge cell for emitting radiation into the discharge cell and a radiation detector on a second side of the discharge cell opposite to the first side for detecting radiation which was emitted by the radiation source through the discharge volume, and electrodes on opposing sides of the discharge cell for generating a plasma within the discharge cell, said electrodes being unexposed plasma electrodes. The discharge cell may be a dielectric barrier discharge cell and the electrodes may be powered by an AC power source.
    Type: Grant
    Filed: October 14, 2016
    Date of Patent: September 22, 2020
    Assignee: INFICON Holding AG
    Inventors: Vladimir Schwartz, Boris Chernodbrod
  • Patent number: 10510519
    Abstract: In time-series data indicating light emission of plasma when plasma processing is carried out on a sample by generating the plasma, an analysis apparatus creates combinations of a plurality of light emission wavelengths of elements and a plurality of time intervals within a plasma processing interval and calculates, for each of the combinations of the wavelengths and the time intervals, a correlation between an average value of light emission intensity and the number of times the plasma processing is carried out on the samples for each of the combinations of the wavelengths and the time intervals that have been created. Thereafter, the data analysis apparatus selects, as a combination of the wavelength and the time interval used to observe or control the plasma processing, a combination of a wavelength of light emitting from a specific element and a specific time interval having a maximum correlation.
    Type: Grant
    Filed: February 23, 2016
    Date of Patent: December 17, 2019
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Ryoji Asakura, Kenji Tamaki, Akira Kagoshima, Daisuke Shiraishi, Masahiro Sumiya
  • Patent number: 10453653
    Abstract: Described herein are architectures, platforms and methods for determining endpoints of an optical emission spectroscopy (OES) data acquired from a plasma processing system. The OES data, for example, includes an absorption—step process, a desorption—step process, or a combination thereof. In this example, the OES data undergoes signal synchronization and transient signal filtering prior to endpoint determination, which may be implemented through an application of a moving average filter.
    Type: Grant
    Filed: March 8, 2017
    Date of Patent: October 22, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Yan Chen, Xinkang Tian, Jason Ferns
  • Patent number: 10431433
    Abstract: In a plasma processing apparatus, a controller controls one or both of a first high frequency power supply and a second high frequency power supply to periodically stop the supply of one or both of the first high frequency power and the second high frequency power. The controller also controls a switching unit to apply a DC voltage to a focus ring from a first time after a predetermined period of time in which a self-bias voltage of a lower electrode is decreased from a start point of each period in which one or both of the first high frequency power and the second high frequency power are supplied and to stop the application of the DC voltage to the focus ring during each period in which the supply of one or both of the first high frequency power and the second high frequency power is stopped.
    Type: Grant
    Filed: June 8, 2018
    Date of Patent: October 1, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Koichi Nagami, Natsumi Torii
  • Patent number: 10410937
    Abstract: A method of manufacturing a semiconductor device comprising: obtaining a raw light signal by selecting a predetermined wavelength band of light reflected from a wafer on which a plurality of patterns are formed; converting the raw light signal into a frequency domain; obtaining a first detection signal having a first frequency band from the raw light signal converted into the frequency domain; obtaining a second detection signal having a second frequency band from the raw light signal converted into the frequency domain, the second frequency band being different from the first frequency band; obtaining a representative value using the first detection signal, the representative value representing a profile of the plurality of patterns; and obtaining a distribution value using the second detection signal, the distribution value representing a profile of the plurality of patterns using the second detection signal.
    Type: Grant
    Filed: July 16, 2018
    Date of Patent: September 10, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jang Ik Park, Bong Seok Kim, Souk Kim, Yu Sin Yang, Soo Seok Lee
  • Patent number: 10408680
    Abstract: Provided is an apparatus for optical emission spectroscopy. The apparatus for the optical emission spectroscopy includes a light collection unit configured to collect light within a plasma process chamber in which plasma is generated to process a substrate, a light transmission unit configured to transmit the collected light, and an analysis unit configured to analyze the light provided through the light transmission unit, thereby analyzing a plasma state. The light collection unit includes a light collection part configured to concentrate the light generated in the plasma process chamber and provide the concentrated light to the light transmission unit.
    Type: Grant
    Filed: January 28, 2016
    Date of Patent: September 10, 2019
    Assignee: Industry-Academic Cooperation Foundation, Yonsei University
    Inventors: Ilgu Yun, Sang Myung Lee
  • Patent number: 10340170
    Abstract: A wafer grooving apparatus (100) for forming an elongate recess (103) in a semiconductor wafer surface, the apparatus comprising: a wafer table (110) for receiving and holding a semiconductor wafer; a radiation device (120) for generating a radiation beam (121); a beam directing device (130) for directing the radiation beam to a top surface (102) of the wafer so as to create a beam spot (142) where the radiation beam ablates wafer material on the wafer surface to form a recess; a wafer table displacement drive (170) for effecting a mutual displacement between the radiation beam and the wafer surface in a radiation beam displacement direction; a recess profile measuring device (180) arranged at a predetermined distance behind the beam directing device in the radiation beam displacement direction effected by the wafer table displacement drive for measuring a depth profile of the recess that has been formed by the radiation beam.
    Type: Grant
    Filed: February 12, 2016
    Date of Patent: July 2, 2019
    Assignee: ASM TECHNOLOGY SINGAPORE PTE LTD
    Inventors: Richard Van Lieshout, Guido Knippels
  • Patent number: 10340140
    Abstract: An abnormal processing can be appropriately detected in a processing of supplying a preset gas to a substrate as a processing target. A hydrophobizing unit U5 includes a processing vessel 21 configured to accommodate therein a wafer W as a processing target; an opening/closing unit 60 (first supply unit) configured to supply air (first gas) into the processing vessel 21; a gas supply unit 30 (second supply unit) configured to supply a HMDS gas (second gas), having a relative humidity different from that of the air, into the processing vessel 21; and a controller 100 (control unit). The controller 100 is configured to determine a state of a gas within the processing vessel 21 based on a relative humidity obtained after a supply of the air by the opening/closing unit 60 and a supply of the HMDS gas by the gas supply unit 30 are performed.
    Type: Grant
    Filed: December 20, 2017
    Date of Patent: July 2, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Tetsuo Fukuoka, Masashi Itonaga
  • Patent number: 10304691
    Abstract: Silicon oxide and silicon nitride can be etched selectively against each other with high efficiency. A method includes preparing a processing target object within a chamber; etching the silicon oxide of the processing target object by generating plasma of a processing gas containing carbon, hydrogen and fluorine within the chamber in a state that a temperature of the processing target object is set to a first temperature; and etching the silicon nitride of the processing target object by generating the plasma of the processing gas containing carbon, hydrogen and fluorine within the chamber in a state that the temperature of the processing target object is set to a second temperature higher than the first temperature.
    Type: Grant
    Filed: September 13, 2017
    Date of Patent: May 28, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Taku Gohira, Sho Tominaga
  • Patent number: 10268124
    Abstract: A method including obtaining a first value of an optical characteristic determined for an etched profile of a substrate measured at a first wavelength of measurement radiation, obtaining a second value of the optical characteristic determined for the etched profile of the substrate measured at a second wavelength of measurement radiation, and obtaining a derived value that represents a difference between the first and second values; and determining, based on the first and second values or on the derived value, an occurrence of a tilt in the etching to form the etched profile.
    Type: Grant
    Filed: March 7, 2018
    Date of Patent: April 23, 2019
    Assignee: ASML Netherlands B.V.
    Inventor: Arie Jeffrey Den Boef
  • Patent number: 10255529
    Abstract: The present disclosure provides an improved approach to implement structure learning of neural networks by exploiting correlations in the data/problem the networks aim to solve. A greedy approach is described that finds bottlenecks of information gain from the bottom convolutional layers all the way to the fully connected layers. Rather than simply making the architecture deeper, additional computation and capacitance is only added where it is required.
    Type: Grant
    Filed: March 13, 2017
    Date of Patent: April 9, 2019
    Assignee: Magic Leap, Inc.
    Inventors: Andrew Rabinovich, Vijay Badrinarayanan, Daniel DeTone, Srivignesh Rajendran, Douglas Bertram Lee, Tomasz Malisiewicz
  • Patent number: 10217681
    Abstract: Silicon nitride plasma etching processes are disclosed that minimize the SiN roughness layer on a substrate having a SiN layer thereon by simultaneously introducing an oxidizer at a predetermined flow rate and an etch gas into a plasma reaction chamber containing the substrate. The etch gas has the formula CxHyFz, wherein x is 2-5, z is 1 or 2, 2x+2=y+z, and a fluorine atom is located on a terminal carbon atom of the etch gas.
    Type: Grant
    Filed: April 23, 2015
    Date of Patent: February 26, 2019
    Assignee: American Air Liquide, Inc.
    Inventors: James Royer, Venkateswara R. Pallem, Rahul Gupta
  • Patent number: 10157805
    Abstract: An apparatus for increasing the uniformity in a critical dimension of chemical vapor deposition and etching during substrate processing, comprising a plurality of gas injectors for admitting a processing gas into an etching chamber. Each gas injector of the plurality of gas injectors is disposed along a track within the etching chamber and moveable along the track. Further, each gas injector is coupled with a throttling valve or nozzle to permit adjustment of processing gas flow rate. A method for increasing the uniformity in a critical dimension of chemical vapor deposition and etching during substrate processing includes performing a chemical deposition or etch using the plurality of moveable and adjustable gas injectors and measuring the critical dimension uniformity. Adjustments to the location of at least one gas injector or the processing gas flow rate to at least one gas injector are made to increase critical dimension uniformity.
    Type: Grant
    Filed: June 10, 2016
    Date of Patent: December 18, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tzung-Shiun Lu, Chun-Lang Chen, Shih-Hao Yang, Jong-Yuh Chang
  • Patent number: 10079184
    Abstract: According to one embodiment, a semiconductor manufacturing apparatus includes a manufacturing processor, a signal acquisition unit, a frequency characteristic acquisition unit, and an end-point acquisition unit. The signal acquisition unit acquires a first processing signal which shows a different behavior during processing of a stacked body and after the processing of the stacked body. The frequency characteristic acquisition unit acquires a frequency characteristic of a noise caused by a periodic structure of the stacked body from the first processing signal during the processing of the stacked body. The end-point acquisition unit detects an end point of the processing using the acquired frequency characteristic. The manufacturing processor ends the processing when the end point is detected.
    Type: Grant
    Filed: June 4, 2015
    Date of Patent: September 18, 2018
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Yuya Matsuda, Ryo Suemitsu
  • Patent number: 10043641
    Abstract: Embodiments provide systems, methods and apparatus for detecting a cleaning endpoint of a cleaning process performed within a processing chamber. Embodiments include a spectrometer adapted to measure a spectrum response over time of a cleaning reaction within a processing chamber during a cleaning process; and a lens system coupled to the spectrometer and disposed to focus on a selected area within the processing chamber via a viewport and to amplify intensity of radiation from the selected area during the cleaning process. The selected area is chosen based on being the expected location of the last cleaning reaction during the cleaning process within the processing chamber (e.g., a corner in a rectangular chamber). Numerous other aspects are provided.
    Type: Grant
    Filed: September 22, 2016
    Date of Patent: August 7, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Young-Jin Choi, Su Ho Cho, Beomsoo Park, Fei Peng, Soo Young Choi
  • Patent number: 9972546
    Abstract: An etching time detection means and an etching time detection method for an etching device. The detection means comprises: a light wave emitter fixed on one substrate of the etching device, a light wave receiver fixed on another substrate and opposed to the light wave emitter, a detection system communicated with the light wave emitter and the light wave receiver for receiving light intensity signals and calculating etching time. With the detection means and the detection method, the automatical detection of etching time can be achieved and the deviation caused by visual observation can be effectively avoided.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: May 15, 2018
    Assignee: BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Tiansheng Li, Changjiang Yan, Shaoying Xu, Zhenyu Xie, Xiaohui Jiang
  • Patent number: 9947967
    Abstract: The present invention provides a method for producing a fluorisulfonylimide salt, which enables reducing the impurity content and continuous operation for a long time, and a fluorosulfonyl imide salt. The fluorosulfonyl imide salt of the present invention has a K content of 10,000 ppm or less. The method for producing a fluorosulfonyl imide salt of the present invention is that after a fluorination reaction of chlorosulfonyl imde or a salt thereof, the reaction solution is brought into contact with an aqueous alkaline solution so as to remove impurities. The fluorosulfonyl imide salt of the present invention, in which various impirities are reduced to extremely low levels, is useful as an electrolyte used in a lithium secondary battery, a capacitor or the like, an ionic liquid, or an intermediate for a sulfonyl imide salt, and the like. It is expected that use of the fluorosulfonyl imide salt of the present invention as an electrolyte leads to a high-performance electrochemical device.
    Type: Grant
    Filed: November 26, 2010
    Date of Patent: April 17, 2018
    Assignee: Nippon Shokubai Co., Ltd.
    Inventors: Shimpei Sato, Yasunori Okumura, Yuichi Sato, Yasuyuki Miyoshi
  • Patent number: 9935023
    Abstract: A via hole is accurately formed in an interlayer insulating film over a metal wiring. Of emission spectra of plasma to be used for dry etching of the interlayer insulating film, the emission intensities of at least CO, CN, and AlF are monitored such that an end point of the dry etching of the interlayer insulating film is detected based on the emission intensities thereof.
    Type: Grant
    Filed: June 22, 2017
    Date of Patent: April 3, 2018
    Assignee: Renesas Electronics Corporation
    Inventors: Toshikazu Hanawa, Kazuhide Fukaya, Kentaro Yamada
  • Patent number: 9899278
    Abstract: In one embodiment, a semiconductor manufacturing apparatus includes an extraction module configured to extract, in cycle etching that repeats first processes of etching a workpiece layer and second processes of performing different processing from the first processes for plural cycles, light emission intensities in the first processes for individual cycles. The apparatus further includes a detection module configured to detect an etching end point of the workpiece layer in the cycle etching, based on the light emission intensities of the plural cycles.
    Type: Grant
    Filed: July 7, 2015
    Date of Patent: February 20, 2018
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventor: Masao Ishikawa
  • Patent number: 9646847
    Abstract: A method for manufacturing an array substrate, a film-etching monitoring and a film-etching monitoring device. The monitoring method comprises: monitoring and recording the transmittance reference value of a film after a film pattern is formed; and monitoring the transmittance present value of the film in real time in the process of etching an overcoating layer to form a through hole after the overcoating layer is formed on the film pattern, and monitoring the etching degree of the film by determining the variation between the transmittance present value and the transmittance reference value. The device comprises a plurality of light sources (3) and a plurality of light-sensitive probes (4) disposed in the chamber. The light sources (3) are configured to irradiate the film on a substrate; and the light-sensitive probes (4) are configured to sense the transmittance of the film.
    Type: Grant
    Filed: May 23, 2014
    Date of Patent: May 9, 2017
    Assignee: BOE Technology Group Co., Ltd.
    Inventors: Zheng Liu, Jang Soon Im
  • Patent number: 9376754
    Abstract: A method includes introducing an organic metal gas containing hydrogen into a deposition vessel to cause a component of the organic metal containing hydrogen to be adsorbed on a substrate; introducing an oxidizing gas or a nitriding gas into the vessel, generating plasma with the oxidizing gas or the nitriding gas by a plasma source, and oxidizing or nitriding the component; detecting emission intensity of a wavelength of light through an observation window in the vessel, the light being emitted, by generating the plasma, from an excited hydrogen radical resulting from the hydrogen separated from the organic metal above the substrate when the organic metal reacts with the oxidizing gas or the nitriding gas to form an oxidized metal or a nitride metal on the substrate; and stopping the generation of the plasma when a value of the detected emission intensity becomes a first predetermined value or less.
    Type: Grant
    Filed: October 4, 2013
    Date of Patent: June 28, 2016
    Assignee: MITSUI ENGINEERING & SHIPBUILDING
    Inventor: Kazuki Tanizawa
  • Patent number: 9177877
    Abstract: A temperature-adjusted spectrometer can include a light source and a temperature sensor.
    Type: Grant
    Filed: April 23, 2014
    Date of Patent: November 3, 2015
    Assignee: First Solar, Inc.
    Inventors: Markus E. Beck, Ming L. Yu
  • Patent number: 9129895
    Abstract: The disclosure provides a real-time wafer breakage detection method. The detection method includes the following operations. A wafer is positioned on a wafer holder of a process chamber in which a thermal process is being performed. Then, the temperature at the wafer holder is measured. And, a notification for corrective action is issued if the temperature is out of a predetermined alarm range.
    Type: Grant
    Filed: October 9, 2013
    Date of Patent: September 8, 2015
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Su-Hao Liu, Chien-Hung Lin, Wei-Han Huang, Zi-Wei Fang
  • Patent number: 9095931
    Abstract: A laser processed hole is formed in a workpiece. The workpiece has a first member formed of a first material bonded to a second member formed of a second material. The laser processed hole extends through the first member to the second member. The wavelength of plasma light generated by applying a pulsed laser beam to the first member and the second member is detected. Application of the laser beam is continued at a first power until the plasma light intensity generated from only the first member is decreased to reach a predetermined value. The laser beam is applied at a second power which is lower than the first power so as to not generate cracks in the first member when the plasma light intensity has reached the predetermined value. Application of the plasma laser beam stops when plasma light generated from the second member is detected.
    Type: Grant
    Filed: March 28, 2013
    Date of Patent: August 4, 2015
    Assignee: Disco Corporation
    Inventor: Hiroshi Morikazu
  • Patent number: 8961804
    Abstract: The present invention provides a method and apparatus for etching a photomask substrate with enhanced process monitoring, for example, by providing for optical monitoring at different regions of the photomask to obtain desired etch rate or thickness loss. In one embodiment, the method includes etching a first substrate through a patterned mask layer in a plasma etch chamber, the first substrate having a backside disposed on a substrate support and a front side facing away from the substrate support, directing a first radiation source from the backside of the first substrate to a first area covered by the patterned mask layer, directing a second radiation source from the backside of the first substrate to a second area uncovered by the patterned mask layer, collecting a first signal reflected from the first area covered by the patterned mask layer, collecting a second signal reflected from the second area uncovered by the patterned mask layer, and analyzing the combined first and the second signal.
    Type: Grant
    Filed: October 12, 2012
    Date of Patent: February 24, 2015
    Assignee: Applied Materials, Inc.
    Inventor: Michael N. Grimbergen
  • Patent number: 8945411
    Abstract: The present invention is to achieve a reduction both in size of a plasma processing apparatus and an installation area thereof. A dry etching apparatus includes a stock unit that includes a cassette storing a tray that can be conveyed and that stores substrates. In a conveying unit storing a conveying apparatus of the tray, a rotary stage is provided. Rotational angular position adjustment of the tray is performed by rotating the rotary stage placed on the tray before being subjected to dry etching and detecting a notch by a notch detecting sensor.
    Type: Grant
    Filed: March 26, 2012
    Date of Patent: February 3, 2015
    Assignee: Panasonic Corporation
    Inventor: Tetsuhiro Iwai
  • Publication number: 20150021294
    Abstract: A plasma processing apparatus includes: a detector configured to detect a change in an intensity of light emission from plasma formed inside a processing chamber; and a unit configured to adjust conditions for forming the plasma or processing a wafer arranged inside the processing chamber using an output from the detector, wherein the detector detects a signal of the intensity of light emission at plural time instants before an arbitrary time instant during processing, and wherein the adjusting unit removes the component of a temporal change of a long cycle of the intensity of light emission from this detected signal and detects the component of a short temporal change of the intensity of light emission, and adjusts the conditions for forming the plasma or processing a wafer arranged inside the processing chamber based on the short temporal change of the detected intensity of light emission.
    Type: Application
    Filed: July 16, 2014
    Publication date: January 22, 2015
    Inventors: Masahito Togami, Tatehito Usui, Kosa Hirota, Satomi Inoue, Shigeru Nakamoto
  • Publication number: 20150011088
    Abstract: Methods are disclosed for depositing material onto and/or etching material from a substrate in a surface processing tool having a processing chamber, a controller and one or more devices for adjusting the process parameters within the chamber. The method comprises: the controller instructing the one or more devices according to a series of control steps, each control step specifying a defined set of process parameters that the one or more devices are instructed to implement, wherein at least one of the control steps comprises the controller instructing the one or more devices to implement a defined set of constant process parameters for the duration of the step, including at least a chamber pressure and gas flow rate through the chamber, which duration is less than the corresponding gas residence time (Tgr) of the processing chamber for the step.
    Type: Application
    Filed: February 27, 2013
    Publication date: January 8, 2015
    Inventors: Mark Edward McNie, Michael Joseph Cooke, Leslie Michael Lea
  • Publication number: 20150004721
    Abstract: An OES measuring unit outputs a spectroscopically measured value for each step at the end of or immediately after each step. A CD estimating unit obtains an estimated CD value for each step using a CD estimation model and a spectroscopically measured value received from an estimation model storage unit.
    Type: Application
    Filed: January 30, 2013
    Publication date: January 1, 2015
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Toshikazu Akimoto, Hiroshi Kannan
  • Patent number: 8924001
    Abstract: Based on a model for determining optical emission intensity values Y at wavelengths from actuator values X of an etching apparatus, X is calculated from Y to achieve preferable Run-to-Run control over Y. A relation between X and Y is defined as a control model (matrix model C1, ratio-constraint model C2) based on an algebraical expression with ?X as an input and ?Y as an output. In etching process control, ?X (manipulated volume) is calculated from ?Y (controlled volume) using the control model, based on a non-control optical emission intensity value Y, to set X (S1) for the etching process, during which Y is monitored. Based on an actual value for Y, a non-control optical emission intensity value Y to be used in the next wafer etching process is calculated.
    Type: Grant
    Filed: December 3, 2010
    Date of Patent: December 30, 2014
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Toshihiro Morisawa, Daisuke Shiraishi, Satomi Inoue, Akira Kagoshima
  • Publication number: 20140360977
    Abstract: A method for estimating a temperature of a substrate includes generating plasma in a plasma processing system. The substrate is arranged on a substrate support structure in the plasma processing system. The plasma generates electromagnetic radiation that is incident upon a first surface of the substrate. The method further includes arranging a detector adjacent to a second surface of the substrate and in-situ the plasma processing system and measuring a signal intensity of electromagnetic radiation passing through the second surface of the substrate at N frequencies. The method includes selecting each of the N frequencies at which the signal intensity is measured by the detector to correspond to a phonon-generating frequency of a material in the substrate. The method includes converting the signal intensity at the N frequencies to N absorbance values and estimating a temperature of the substrate based on the N absorbance values.
    Type: Application
    Filed: June 17, 2014
    Publication date: December 11, 2014
    Inventor: Enrico Magni
  • Patent number: 8900469
    Abstract: A method and apparatus for etching a photomask substrate with enhanced process monitoring is provided. In one embodiment, a method of determining an etching endpoint includes performing an etching process on a first tantalum containing layer through a patterned mask layer, directing a radiation source having a first wavelength from about 200 nm and about 800 nm to an area uncovered by the patterned mask layer, collecting an optical signal reflected from the area covered by the patterned mask layer, analyzing a waveform obtained the reflected optical signal reflected from the substrate from a first time point to a second time point, and determining a first endpoint of the etching process when a slope of the waveform is changed about 5 percent from the first time point to the second time point.
    Type: Grant
    Filed: July 6, 2012
    Date of Patent: December 2, 2014
    Assignee: Applied Materials, Inc.
    Inventor: Michael Grimbergen
  • Patent number: 8900470
    Abstract: A method for etching a layer is provided. A substrate is provided in a chamber. An etch plasma for etching a layer on the substrate is generated. Light from a first region of the chamber is measured to provide a first signal. Light from a second region of the chamber is measured to provide a second signal. The first signal with the second signal are compared to determine an etch endpoint.
    Type: Grant
    Filed: October 17, 2012
    Date of Patent: December 2, 2014
    Assignee: Lam Research Corporation
    Inventor: Evelio Sevillano
  • Patent number: 8883024
    Abstract: The invention provide apparatus and methods for creating gate structures on a substrate in real-time using Vacuum Ultra-Violet (VUV) data and Electron Energy Distribution Function (EEDƒ) data and associated (VUV/EEDƒ)-related procedures in (VUV/EEDƒ) etch systems. The (VUV/EEDƒ)-related procedures can include multi-layer-multi-step processing sequences and (VUV/EEDƒ)-related models that can include Multi-Input/Multi-Output (MIMO) models.
    Type: Grant
    Filed: October 18, 2011
    Date of Patent: November 11, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Lee Chen, Jianping Zhao
  • Patent number: 8883025
    Abstract: A plasma processing apparatus includes a stock unit, a processing unit, and an alignment chamber. The stock unit supplies and collects a conveyable tray formed with a plurality of housing holes in each of which a wafer is housed. In the processing chamber, plasma processing is executed on the wafers housed in the tray supplied from the stock unit. The alignment chamber is provided with a rotating table on which the tray before being subjected to the plasma processing is set to perform positioning of the wafers on the rotating table. A housing state determination unit of a control device determines whether or not the wafer is misaligned with respect the housing hole of the tray based on a height detected by height detecting sensors.
    Type: Grant
    Filed: May 25, 2011
    Date of Patent: November 11, 2014
    Assignee: Panasonic Corporation
    Inventors: Shogo Okita, Yasuhiro Onishi
  • Patent number: 8877080
    Abstract: The invention provides an apparatus and methods for creating gate structures on a substrate in real-time using Vacuum Ultra-Violet (VUV) data and Electron Energy Distribution Function (EEDf) data and associated (VUV/EEDf)-related procedures in (VUV/EEDf) etch systems. The (VUV/EEDf)-related procedures can include multi-layer-multi-step processing sequences and (VUV/EEDf)-related models that can include Multi-Input/Multi-Output (MIMO) models.
    Type: Grant
    Filed: October 18, 2011
    Date of Patent: November 4, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Lee Chen, Jianping Zhao
  • Publication number: 20140284307
    Abstract: A focused ion beam system includes a focused ion beam irradiation mechanism which irradiates a sample, on which a protective film is formed, with a focused ion beam from above the sample, a processing control unit which performs a removal process on both sides of a region to be a thin piece portion of the sample by the focused ion beam and sequentially forms observation surfaces parallel to an irradiation direction of the focused ion beam so as to achieve the thin piece portion, and an observation surface image generation unit which generates an observation surface image. The processing control unit terminates the removal process when a height of the protective film in the irradiation direction of the focused ion beam becomes a predetermined threshold value or less in the observation surface image.
    Type: Application
    Filed: March 21, 2014
    Publication date: September 25, 2014
    Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION
    Inventors: Tatsuya ASAHATA, Shota TORIKAWA
  • Patent number: 8808559
    Abstract: A method and apparatus for etching a photomask substrate with enhanced process monitoring, for example, by providing for optical monitoring at different regions of the photomask to obtain desired etch rate or thickness loss is provided. In one embodiment, the method includes performing an etching process on a reflective multi-material layer that includes at least one molybdenum layer and one silicon layer through a patterned mask, directing radiation having a wavelength from about 170 nm and about 800 nm to an area of the multi-material layer uncovered by the patterned mask, collecting an optical signal reflected from the area uncovered by the patterned mask, analyzing a waveform obtained from the reflected optical signal, and determining a first endpoint of the etching process when an intensity of the reflected optical signal is between about 60 percent and about 90 percent less than an initial reflected optical signal.
    Type: Grant
    Filed: July 8, 2012
    Date of Patent: August 19, 2014
    Assignee: Applied Materials, Inc.
    Inventor: Michael Grimbergen
  • Publication number: 20140197134
    Abstract: Systems and methods for plasma processing of microfeature workpieces are disclosed herein. In one embodiment, a method includes generating a plasma in a chamber while a microfeature workpiece is positioned in the chamber, measuring optical emissions from the plasma, and determining a parameter of the plasma based on the measured optical emissions. The parameter can be an ion density or another parameter of the plasma.
    Type: Application
    Filed: March 18, 2014
    Publication date: July 17, 2014
    Applicant: Micron Technology, Inc.
    Inventors: Shu Qin, Allen McTeer
  • Patent number: 8778204
    Abstract: A method and apparatus for monitoring a target layer in a plasma process having a photoresist layer is provided. The method is useful in removing noise associated with the photoresist layer, and is particularly useful when signals associated with the target layer is weak, such as when detecting an endpoint for a photomask etching process.
    Type: Grant
    Filed: October 26, 2011
    Date of Patent: July 15, 2014
    Assignee: Applied Materials, Inc.
    Inventor: Michael N. Grimbergen
  • Patent number: 8747686
    Abstract: Methods and substrate processing systems for analyzing an end point of a process are provided. By-products of the process are detected and monitored to determine the completion of various types of reaction processes within a substrate processing chamber. The methods provide real time process monitoring, thereby reducing the need to rigidly constrain other substrate processing parameters, increasing chamber cleaning efficiency, and/or increasing substrate processing throughput.
    Type: Grant
    Filed: January 27, 2012
    Date of Patent: June 10, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Bo Zheng, Mei Chang, Arvind Sundarrajan
  • Patent number: 8741164
    Abstract: Methods for optimizing a plasma process are provided. The method may include obtaining a measurement spectrum from a plasma reaction in a chamber, calculating a normalized measurement standard and a normalized measurement spectrum of the measurement spectrum, comparing the normalized measurement spectrum with a normalized reference spectrum, and comparing the normalized measurement standard with a normalized reference standard to determine whether to change a process parameter of the plasma process or clean the chamber when the normalized measurement spectrum and the normalized reference spectrum are mismatched.
    Type: Grant
    Filed: August 30, 2012
    Date of Patent: June 3, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sangwuk Park, Kye Hyun Baek, Kyoungsub Shin, Brad H. Lee
  • Patent number: 8721907
    Abstract: A system and a method for milling and inspecting an object. The method may include performing at least one iteration of a sequence that includes: milling, by a particle beam, a first surface of the object, during a first surface milling period; obtaining, by an electron detector, an image of a second surface of the object during at least a majority of the first surface milling period; wherein the object is expected to comprise an element of interest (EOI) that is positioned between the first and second surfaces; milling, by the particle beam, the second surface of the object during a second surface milling period; wherein each of the first surface milling period and the second surface milling period has a duration that exceeds a long duration threshold; obtaining by the electron detector an image of the first surface of the object during at least a majority of the second surface milling period.
    Type: Grant
    Filed: October 27, 2011
    Date of Patent: May 13, 2014
    Assignee: Camtek Ltd.
    Inventors: Dimitry Boguslavsky, Colin Smith
  • Patent number: 8709268
    Abstract: A method of etching the whole width of a substrate to expose buried features is disclosed. The method includes etching a face of a substrate across its width to achieve substantially uniform removal of material; illuminating the etched face during the etch process; applying edge detection techniques to light reflected or scattered from the face to detect the appearances of buried features; and modifying the etch in response to the detection of the buried feature. An etching apparatus for etching substrate across its width to expose buried is also disclosed.
    Type: Grant
    Filed: November 12, 2012
    Date of Patent: April 29, 2014
    Assignee: SPTS Technologies Limited
    Inventor: Oliver James Ansell
  • Patent number: 8685265
    Abstract: An etching apparatus includes a process unit and a control unit. Emission intensity of plasma inside the process unit is obtained by an OES detector, a nonlinear regression analysis is performed by an etching control device to determine a regression formula. The nonlinear regression analysis is performed by using the emission intensity of the plasma obtained until a first time when the emission intensity of the plasma passes a peak, and a second time to be an etching end point is calculated by using the regression formula. The etching end point is calculated as a time when the emission intensity decreases for a predetermined value from the first time. The etching apparatus finishes an etching when the process reaches the etching end point. It is thereby possible to control the etching end point with high-accuracy.
    Type: Grant
    Filed: May 11, 2012
    Date of Patent: April 1, 2014
    Assignee: Fujitsu Semiconductor Limited
    Inventors: Yoshiyuki Nakao, Kazuo Hashimi
  • Publication number: 20130256266
    Abstract: Methods and apparatuses for controlling plasma generation in a plasma processing chamber to reduce an effective residence time of by-product gases or to control in real time the concentration of certain polymer pre-cursors or reaction by-products in the plasma processing chamber are disclosed. The gas residence time is “effectively” reduced by reducing the plasma reaction for at least a portion of the process time. Thresholds can be provided to control when the plasma reaction is permitted to proceed at the full rate and when the plasma reaction is permitted to proceed at the reduced rate. By reducing the rate of plasma by-product generation at least for a portion of the process time, the by-product gas residence time may be effectively reduced to improve process results.
    Type: Application
    Filed: March 30, 2012
    Publication date: October 3, 2013
    Inventor: Andreas Fischer
  • Patent number: 8518283
    Abstract: The present invention relates to a plasma etching method in which a special area for detecting an end point needs not to be set and an equipment therefor. At an etching step of forming SF6 gas into plasma to etch an etching ground on a Si film, the step is configured by two steps of: a large-amount supply step of supplying a large amount of SF6 gas; and a small-amount supply step of supplying a small amount of SF6 gas. An end-point detecting processor 34 measures an emission intensity of Si or SiFx in the plasma at the small-amount supply step, and determines that an etching end point is reached when the measured emission intensity becomes equal to or less than a previously set reference value.
    Type: Grant
    Filed: July 27, 2007
    Date of Patent: August 27, 2013
    Assignee: SPP Technologies Co., Ltd.
    Inventors: Takashi Yamamoto, Masahiko Tanaka, Yoshiyuki Nozawa, Shoichi Murakami
  • Publication number: 20130213933
    Abstract: Apparatus and methods are disclosed for employing an accelerated neutral beam derived from an accelerated gas cluster ion beam as a physical etching beam for providing reduced material mixing at the etched surface, compared to previous techniques. This results in the ability to achieve improved depth profile resolution in measurements by analytical instruments such as SIMS and XPS (or ESCA) analytical instruments.
    Type: Application
    Filed: August 21, 2012
    Publication date: August 22, 2013
    Applicant: Exogenesis Corporation
    Inventors: Sean R. Kirkpatrick, Allen R. Kirkpatrick
  • Patent number: 8512585
    Abstract: Methods for forming an imprint lithography template are provided. Materials for forming the imprint lithography template may be etched at different rates based on physical properties of the layers. Additionally, reflectance of the materials may be monitored to provide substantially uniform erosion of the materials.
    Type: Grant
    Filed: January 18, 2012
    Date of Patent: August 20, 2013
    Assignee: Molecular Imprints, Inc.
    Inventors: Gary F. Doyle, Gerard M. Schmid, Michael N. Miller, Douglas J. Resnick, Dwayne L. LaBrake
  • Publication number: 20130180953
    Abstract: The present invention is to achieve a reduction both in size of a plasma processing apparatus and an installation area thereof. A dry etching apparatus includes a stock unit that includes a cassette storing a tray that can be conveyed and that stores substrates. In a conveying unit storing a conveying apparatus of the tray, a rotary stage is provided. Rotational angular position adjustment of the tray is performed by rotating the rotary stage placed on the tray before being subjected to dry etching and detecting a notch by a notch detecting sensor.
    Type: Application
    Filed: March 26, 2012
    Publication date: July 18, 2013
    Inventor: Tetsuhiro Iwai