Abstract: A spectroscopic analysis method having improved accuracy and correlation, a method for fabricating a semiconductor device using the same, and a substrate process system using the same are provided. The spectroscopic analysis method includes receiving plasma light emitted from plasma to generate an emission spectrum, detecting n (here, n is a natural number of 2 or more) peak wavelengths from the emission spectrum, generating a plurality of correlation factor time series from correlation factors between the peak wavelengths, filtering the plurality of correlation factor time series, and analyzing the plasma, using the filtered correlation factor time series.

Abstract: The present disclosure provides a semiconductor process apparatus and a plasma ignition method. The semiconductor process apparatus includes a reaction chamber, an air inlet assembly configured to introduce the reaction gas into the reaction chamber, an upper electrode assembly configured to excite the reaction gas into the plasma, a monitor configured to monitor the electromagnetic radiation intensity of the plasma in the reaction chamber when the plasma is ignited, a controller configured to determine whether the electromagnetic radiation intensity monitored by the monitor reaches the preset intensity, if yes, determine that the plasma ignition is successful, and after the plasma ignition is successful, control the upper electrode assembly to perform the impedance matching of the first preset duration. In the present disclosure, the consistency of the process results may be improved to improve the uniformity of the products.

Abstract: The invention relates to a device and method for imaging electromagnetic radiation from an object. The device comprises entrance optics for allowing the electromagnetic radiation to enter the device, comprising an image plane onto which an image of the object is to be imaged. The device comprises an interferometer having a measurement arm, wherein the image plane is in the measurement arm. The device comprises a transformation layer, at the image plane, for transforming the electromagnetic radiation into a spatiotemporal variation of the refractive index of the transformation layer for causing spatiotemporal optical phase differences in the measurement arm of the interferometer that are processed to result in a representative image of the object.

Abstract: An etching method of etching apparatus is disclosed. The etching apparatus performs an etching process on a material to be processed which includes a material layer and a mask layer formed on the material layer. The etching method includes the following steps. The mask layer is etched. A light intensity at a specific wavelength for light generated is detected when the etching process is performed on the mask layer to be processed and an end point detection signal is generated. An etching completion time of the mask layer to be etched is determined according to the end point detection signal. A thickness of the mask layer to be etched is calculated according to the etching completion time. An etching time of the material layer is adjusted according to the thickness of the mask layer to be etched. The material layer is etched after adjusting the etching time.

Abstract: A method of fabricating an air gap includes receiving a first thickness information of an inter-metal dielectric layer formed on a substrate and receiving a second thickness information of an inter-layer dielectric layer formed on the substrate. Then, a first etching is performed, wherein the first etching includes etch the inter-metal dielectric layer based on a first etching control value corresponding to the first thickness information. After the first etching, a second etching is performed to etch the inter-layer dielectric layer based on a second etching control value corresponding to the second thickness information.

Abstract: Tin oxide films are used as mandrels in semiconductor device manufacturing. In one implementation the process starts by patterning a tin oxide layer using at least one of a hydrogen-based etch chemistry and a chlorine-based etch chemistry, and using patterned photoresist as a mask, thereby providing a substrate having a plurality of protruding tin oxide features (mandrels). Next, a conformal layer of spacer material is formed both on the horizontal surfaces and on the sidewalls of the mandrels. The spacer material is then removed from the horizontal surfaces exposing the tin oxide material of the mandrels, without fully removing the spacer material residing at the sidewalls of the mandrels. Next, mandrels are selectively removed (e.g., using hydrogen-based etch chemistry), while leaving the spacer material that resided at the sidewalls of the mandrels. The resulting spacers can be used for patterning underlying layers on the substrate.

Abstract: The disclosure provides features for improved processing of optical data by identifying and characterizing stationary and transient signals in the electrical data representing the data collected from an optical sensor of an optical measurement system. In one example, an optical measurement system is disclosed that includes: (1) a pixel area of an optical sensor having multiple pixels that store an electrical charge corresponding to a received optical signal, (2) one or more reduced illumination regions that provide signal levels intrinsic to the optical sensor, and (3) one or more processors configured to adjust, during active operation of the system, digital representations of the electrical charges from the pixels of the pixel area using characterizations of the signal levels from the one or more reduced illumination regions.

Abstract: Disclosed are embodiments of an improved apparatus and system, and associated methods for optically diagnosing a semiconductor manufacturing process. A hyperspectral imaging system is used to acquire spectrally-resolved images of emissions from the plasma, in a plasma processing system. Acquired hyperspectral images may be used to determine the chemical composition of the plasma and the plasma process endpoint. Alternatively, a hyperspectral imaging system is used to acquire spectrally-resolved images of a substrate before, during, or after processing, to determine properties of the substrate or layers and features formed on the substrate, including whether a process endpoint has been reached; or before or after processing, for inspecting the substrate condition.

Abstract: An inductively-coupled plasma processing apparatus for performing an inductively-coupled plasma processing on a rectangular substrate, includes: a processing container; a mounting table for mounting the substrate thereon; a rectangular metal window provided to be electrically insulated from the processing container while facing the mounting table; and an antenna unit for generating an inductively-coupled plasma inside the processing container. The metal window is divided into divided regions electrically insulated from each other by a first division extending in a radial direction toward each corner portion of the metal window. The antenna unit includes a first high-frequency antenna in which antenna segments having planar portions facing an upper surface of the metal window are arranged. Each antenna segment is configured by spirally winding an antenna wire in a vertical direction orthogonal to the upper surface of the rectangular metal window so that a winding axis is parallel to the upper surface.

Abstract: An etching apparatus includes: a placement table serving as a lower electrode and configured to place a workpiece to be subjected to an etching processing thereon; a DC power supply configured to generate a negative DC voltage applied to the placement table; and a controller configured to: periodically apply a negative DC voltage to the placement table from the DC power supply when the etching processing on the workpiece placed on the placement table is initiated, and decrease a frequency of the negative DC voltage applied to the placement table with an elapse of processing time of the etching processing.

Abstract: A method of removing a coating from a substrate comprises positioning a nozzle of an apparatus such that a longitudinal axis of a distal end of the nozzle is inclined at an angle ? with a coated surface of the substrate. The nozzle including an inner conduit having an orifice and an outer conduit coaxially arranged about the inner conduit and defining an annular opening between the inner and outer conduits. Directing a liquid stream through the orifice toward the coated surface and directing a gas flow through the annular opening such that the gas flow surrounds the liquid stream, and impinging the liquid stream on the coated surface.

Abstract: Apparatuses, systems, and methods for providing beams for controlling charges on a sample surface of charged particle beam system. In some embodiments, a module comprising a laser source configured to emit a beam. The beam may illuminate an area adjacent to a pixel on a wafer to indirectly heat the pixel to mitigate a cause of a direct photon-induced effect at the pixel. An electron beam tool configured to detect a defect in the pixel, wherein the defect is induced by the indirect heating of the pixel.

Abstract: A substrate processing method includes forming a pre-coat film on an in-chamber part disposed in a chamber, and subsequently processing one or more substrates. The forming a pre-coat film includes forming a first film on the in-chamber part without using plasma or by using a first plasma generated under a condition that sputtering is suppressed on the in-chamber part, and forming a second film on a surface of the first film by using a second plasma.

Abstract: The disclosure describes apparatus and method for detecting an endpoint in plasma-assisted wafer processing in a chamber. A fiber array comprising a plurality of fibers collects optical emission light from the chamber during the plasma-assisted wafer processing. The fiber array is split into two or more groups of fibers, each group carrying a portion of the light to a segment of a photodetector. Each segment of photodetector has a corresponding narrowband optical filter designed for a specific range of wavelengths. A computer processor analyzes detected signals from the plurality of segments of the photodetector, and determines, based on the analysis of the detected signals, an endpoint of the plasma-assisted wafer processing as indicated by the presence or the absence of the one or more chemical species in the chamber. The photodetector can be based on photomultiplier tube (PMT) array or based on photodiodes (e.g., avalanche photodiodes (APDs)).

Abstract: A vacuum processing apparatus includes a processing unit comprising a processing chamber disposed in a vacuum container, a detector detecting a thickness of the target film on a wafer or an end point during the processing of the wafer using a light from the wafer, the detector being functioned to detect the thickness or the end point by comparing a data pattern of obtained in advance indicating light intensities of a plurality of wavelengths related to the film thickness using the wavelength as a parameter and a real data pattern indicating the light intensities of the plurality of wavelengths obtained at a particular time during the processing, and the data pattern being obtained by dividing differential coefficient value of time-series data of the light intensities of the plurality of wavelengths by time-series data indicating values of the light intensities of the plurality of wavelengths.

Abstract: An apparatus, method, and non-transitory computer-readable medium reduces the power level of a reflected wave from a load coupled to a radio-frequency power supply. A plasma processing apparatus includes a chamber, a substrate support, a radio-frequency power supply, a bias power supply, and a controller. The bias power supply periodically applies a pulsed negative voltage to the substrate support. The controller controls the radio-frequency power supply to provide radio-frequency power with a changed frequency within a period in which the pulsed negative voltage is applied from the bias power supply to the substrate support, to reduce a power level of a reflected wave from a load that is coupled to the radio-frequency power supply.

Abstract: The present application discloses a semiconductor manufacturing apparatus, including: a chamber including an inner chamber, an outer chamber and a passage communicating the inner chamber with the outer chamber, the passage being located between the inner chamber and a chamber sidewall; and one or more electrodes disposed in the chamber sidewall and configured to ionize a treating gas coming from the inner chamber to generate plasma so as to clean off deposit produced in the inner chamber.

Abstract: A work piece is positioned on a work piece support, which includes a plurality of temperature control zones. A pre-etch surface topography is determined by measuring a plurality of pre-etch surface heights or thicknesses at a plurality of sites on the work piece. The plurality of sites correspond to the plurality of temperature control zones on the work piece support. At least a first zone of the temperature control zones is heated or cooled based on the measured plurality of pre-etch surface heights or thicknesses, so that the first zone has a first temperature different from a second temperature of a second zone of the temperature control zones. A dry etch is carried out while the first zone has the first temperature different from the second temperature of the second zone of the temperature control zones.

Abstract: Embodiments include a modular high-frequency emission source. In an embodiment, the modular high-frequency emission source includes a plurality of high-frequency emission modules, where each high-frequency emission module comprises and oscillator module, an amplification module, and an applicator. In an embodiment the oscillator module comprises a voltage control circuit and a voltage controlled oscillator. In an embodiment, the amplification module is coupled to the oscillator module. In an embodiment, the applicator is coupled to the amplification module. In an embodiment, each high-frequency emission module includes a different oscillator module.

Abstract: A method, system and computer program product for a heuristic determination of in-process damage class control to manage expected output product category. The heuristic technique determines the predicted damages and their ranges while keeping the initial expected defects, the respective classes and range of defect and mitigation. The method dynamically computes a damage mitigation range of operation while being within the overall constraints and completes the computation in smaller number of loops being run at the edge computers so that the manufacturing equipment can operate at a higher velocity for higher quality of the output. The method includes a step of reducing error of the co-efficient and damage counts. An Internet of Things (IoT) based robot is used to mitigate the damages in the manufacturing steps to ensure that the output class of the product remains what was expected at the start despite damages and mitigation measures.

Abstract: A wafer processing system and a rework method thereof are provided. An image capture device captures an image of a wafer to generate a captured image. A control device detects a defect pattern in the captured image, calculates a target removal thickness according to distribution of contrast values of the defect pattern, and controls a processing device to perform processing on the wafer according to the target removal thickness.

Abstract: An endpoint detection system for enhanced spectral data collection is provided. An optical bundle is coupled to a light source configured to generate incident light. The optical bundle includes two or more sets of optical fibers that each include an emitting optical fiber and a receiving optical fiber. The receiving optical fibers are disposed within the optical bundle at a pairing angle relative to a respective emitting optical fiber. The optical bundle is also coupled to a collimator assembly that includes an achromatic lens. The achromatic lens receives a first light beam of incident light from a first emitting optical fiber and directs spectral components of the first light beam to a first and second portion of a surface of a substrate. The first portion of the substrate surface is substantially the same as the second portion. The achromatic lens collects reflected spectral components that are produced by the spectral components directed to the first and second portions of the substrate surface.

Abstract: In a plasma processing apparatus, a mounting table includes a heater for adjusting a temperature of a mounting surface mounting thereon a consumable part consumed by plasma processing. A heater control unit controls a supply power to the heater such that the heater reaches a setting temperature. A measurement unit measures, while controlling the supply power to the heater such that the temperature of the heater becomes constant, the supply powers in a non-ignition state where plasma is not ignited and in a transient state where the supply power is decreased after the plasma is ignited. A parameter calculation unit calculates a thickness of the consumable part by performing fitting with a calculation model, which has the thickness of the consumable part as a parameter and calculates the supply power in the transient state, by using the measured supply powers in the non-ignition state and in the transient state.

Abstract: A device and a method of detecting a concentration of a sample are provided. The device includes a power supply unit configured to supply power to generate plasma, a plasma generation unit connected to the power supply unit and including a pair of electrodes facing each other, a plurality of signal detection units arranged on the pair of electrodes and configured to sense light emitted from the sample because of the plasma, and a controller configured to control a driving start point of the signal detection unit so that the signal detection unit is driven after a preset period of time after oscillation is terminated between the pair of electrodes.

Abstract: The disclosure relates to microwave cavity plasma reactor (MCPR) apparatus and associated optical measurement system that enable microwave plasma assisted chemical vapor deposition (MPACVD) of a component such as diamond while measuring the local surface properties of the component while being grown. Related methods include deposition of the component, measurement of the local surface properties, and/or alteration of operating conditions during deposition in response to the local surface properties. As described in more detail below, the MPCR apparatus includes one or more electrically conductive, optically transparent regions forming part of the external boundary of its microwave chamber, thus permitting external optical interrogation of internal reactor conditions during deposition while providing a desired electrical microwave chamber to maintain selected microwave excitation modes therein.

Abstract: A plasma generation apparatus includes a housing fitted in a portion of an upper surface of a process chamber of a deposition apparatus and having a protruding portion having an elongated shape in a plan view and protruding upward from a bottom surface, a coil wound around a side surface of the protruding portion and having an elongated shape in the plan view, and an inclination adjustment mechanism configured to independently move upward and downward both ends in a longitudinal direction of the coil to change an inclination of the coil in the longitudinal direction.

Abstract: Thin tin oxide films can be used in semiconductor device manufacturing. In one implementation, a method of processing a semiconductor substrate includes: providing a semiconductor substrate having a plurality of protruding features residing on an etch stop layer material, and an exposed tin oxide layer in contact with both the protruding features and the etch stop layer material, where the tin oxide layer covers both sidewalls and horizontal surfaces of the protruding features; and then completely removing the tin oxide layer from horizontal surfaces of the semiconductor substrate without completely removing the tin oxide layer residing at the sidewalls of the protruding features. Next, the protruding features can be removed without completely removing the tin oxide layer that resided at the sidewalls of the protruding features, thereby forming tin oxide spacers.

Abstract: Apparatuses, systems, and methods for providing beams for controlling charges on a sample surface of charged particle beam system. In some embodiments, a module comprising a laser source configured to emit a beam. The beam may illuminate an area adjacent to a pixel on a wafer to indirectly heat the pixel to mitigate a cause of a direct photon-induced effect at the pixel. An electron beam tool configured to detect a defect in the pixel, wherein the defect is induced by the indirect heating of the pixel.

Abstract: A white light illumination source can illuminate a region of a substrate to be plasma etched with an incident light beam. A camera takes successive images of the region being illuminated during a plasma etch process. Image processing techniques can be applied to the images so as to identify a location of at least one feature on the substrate and to measure a reflectivity signal at the location. The plasma etch process can be modified in response to the measured reflectivity signal at the location.

Abstract: Substrate supports comprising a top plate positioned on a shaft are described. The top plate including a primary heating element a first depth from the surface of the top plate, a inner zone heating element a second depth from the surface of the top plate and an outer zone heating element a third depth from the surface of the top plate. Substrate support assemblies comprising a plurality of substrate supports and methods of processing a substrate are also disclosed.

Abstract: Embodiments disclosed herein include a substrate support having a sensor assembly, and processing chamber having the same. In one embodiment, a substrate support has a puck. The puck has a workpiece support surface and a gas hole exiting the workpiece support surface. A sensor assembly is disposed in the gas hole and configured to detect a metric indicative of a deflection of a workpiece disposed on the workpiece support surface, wherein the sensor assembly is configured to provide the benefit of allowing gas to flow past the sensor assembly when positioned in the gas hole.

Abstract: An apparatus includes a base component and collimators housed within the base component. The collimators correspond to collection cylinders for sampling optical emission spectroscopy (OES) signals with respect to locations of a wafer in an etch chamber. The apparatus further includes a guide, operatively coupled to the plurality of collimators, to guide the sampling of the OES signals along paths for sampling the OES signals.

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

Abstract: Implementations disclosed describe an optical inspection device comprising a source of light to direct a light beam to a location on a surface of a wafer, the wafer being transported from a processing chamber, wherein the light beam is to generate, a reflected light, an optical sensor to collect a first data representative of a direction of the first reflected light, collect a second data representative of a plurality of values characterizing intensity of the reflected light at a corresponding one of a plurality of wavelengths, and a processing device, in communication with the optical sensor, to determine, using the first data, a position of the surface of the wafer; retrieve calibration data, and determine, using the position of the surface of the wafer, the second data, and the calibration data, a characteristic representative of a quality of the wafer.

Abstract: To provide a wavelength selection method or a plasma processing method to achieve accurate detection of residual thickness or etching amount, there is provided a plasma processing method, in which a processing object wafer is disposed within a processing chamber in the inside of a vacuum container, and plasma is generated by supplying a processing gas into the processing chamber and used to process a processing-object film layer beforehand formed on a surface of the wafer, and at least two wavelengths are selected from among wavelengths with large mutual information in emission of a plurality of wavelengths of plasma generated during processing of the processing-object film layer, and a temporal change in the emission of at least the two wavelengths is detected, and an endpoint of the processing of the film layer is determined based on a result of the detection.

Abstract: A processing method of a workpiece used when the workpiece is processed is provided. The processing method of a workpiece includes a disposing step of disposing the workpiece in a gas containing a substance that generates an active species that reacts with the workpiece, a measurement step of measuring the distribution of the thickness of the workpiece disposed in the gas, and a laser beam irradiation step of irradiating the workpiece in the gas with a laser beam of which the power is adjusted based on the distribution of the thickness measured in the measurement step. In the laser beam irradiation step, the removal amount by which a region irradiated with the laser beam in the workpiece is removed by the active species is controlled by irradiating the workpiece with the laser beam of which the power is adjusted.

Abstract: Disclosed are embodiments of an improved apparatus and system, and associated methods for optically diagnosing a semiconductor manufacturing process. A hyperspectral imaging system is used to acquire spectrally-resolved images of emissions from the plasma, in a plasma processing system. Acquired hyperspectral images may be used to determine the chemical composition of the plasma and the plasma process endpoint. Alternatively, a hyperspectral imaging system is used to acquire spectrally-resolved images of a substrate before, during, or after processing, to determine properties of the substrate or layers and features formed on the substrate, including whether a process endpoint has been reached; or before or after processing, for inspecting the substrate condition.

Abstract: A ranging apparatus for use in a plasma processing chamber having an internal space and a window is disclosed. The ranging apparatus includes at least one external light emitting device disposed external to the plasma processing chamber. The external light emitting device emits at least one source light beam to the internal space through the window. The ranging apparatus includes a base wafer disposed on a stage in the internal space. The ranging apparatus includes at least one optical circuit fixed to the base wafer. The optical circuit deflects the source light beam to a target in the internal space, and deflects a reflection light beam to the window. The ranging apparatus includes at least one external light receiving device disposed external to the plasma processing chamber. The external light receiving device receives the deflected reflection light beam through the window.

Abstract: In a plasma processing apparatus, a mounting table includes a heater for adjusting a temperature of a mounting surface mounting thereon a consumable part consumed by plasma processing. A heater control unit controls a supply power to the heater such that the heater reaches a setting temperature. A measurement unit measures, while controlling the supply power to the heater such that the temperature of the heater becomes constant, the supply powers in a non-ignition state where plasma is not ignited and in a transient state where the supply power is decreased after the plasma is ignited. A parameter calculation unit calculates a thickness of the consumable part by performing fitting with a calculation model, which has the thickness of the consumable part as a parameter and calculates the supply power in the transient state, by using the measured supply powers in the non-ignition state and in the transient state.

Abstract: Method of processing an object in an energy application zone by radio frequency (RF) radiation emitted by one or more radiating elements configured to emit the RF radiation in response to RF energy applied thereto, wherein the method includes controlling supply of RF energy to the one or more radiating elements via an RF energy supply component, receiving measured response values produced based on RF energy received by the one or more radiating elements from the energy application zone, accessing a stored set of coefficients associated with the RF energy supply component, said set of coefficients being utilized to transform the measured response values and controlling application of RF energy to the one or more radiating elements based on the measured response values and the set of coefficients.

Abstract: A semiconductor-inspection method is performed by a semiconductor-inspection system. In the method, user input is received that specifies a swath across a semiconductor die for inspection. The swath has a width that is less than a width of the semiconductor die and that corresponds to a field of view of the semiconductor-inspection system. The swath of the semiconductor die is inspected based on the user input. Data from inspecting the swath is processed to identify defects in the swath.

Abstract: A method for determining material removal by an ion beam (3) on a test workpiece (7) which is disposed in a machining chamber (5) of a housing (6) of a device (1) for beam machining, wherein the test workpiece (7) has a substrate (8) and a layer (9) applied to the substrate. The method includes a) optically determining a layer thickness (d1) of the layer applied to the substrate, b) removing material of the layer from the test workpiece with the ion beam, c) optically determining the layer thickness (d2) of the layer applied to the substrate, and d) determining the material removal by comparing the layer thickness determined in step a) with the layer thickness determined in step c). Also disclosed is a device (1) for beam machining a workpiece (2) with which the method can be carried out.

Abstract: Embodiments described herein provide methods and apparatus used to reduce or substantially eliminate undesirable scratches to the non-active surface of a substrate by monitoring and controlling the deflection of a substrate, and thus the contact force between the substrate and a substrate support, during substrate processing. In one embodiment a method for processing a substrate includes positioning the substrate on a patterned surface of a substrate support, where the substrate support is disposed in a processing volume of a processing chamber, applying a chucking voltage to a chucking electrode disposed in the substrate support; flowing a gas into a backside volume disposed between the substrate and the substrate support, monitoring a deflection of the substrate, and changing a chucking parameter based on the deflection of the substrate.

Abstract: A shower head according to an embodiment includes: a mixing chamber mixing a plurality of process gases; a shower plate provided below the mixing chamber, the shower plate including a plurality of longitudinal flow paths and a lateral cooling flow path provided between the longitudinal flow paths, a mixed gas of the process gases flowing through the longitudinal flow paths, a cooling medium flowing through the lateral cooling flow path; and an outer circumferential portion cooling flow path provided around the shower plate.

Abstract: A substrate processing apparatus in accordance with an exemplary embodiments include: a first tube configured to provide a processing space in which a plurality of substrates are processed; a substrate support part configured to load the plurality of substrates in a first direction in the processing space; a plurality of gas supply parts provided with supply ports for supplying a process gas required for a process in which the substrates are processed; an exhaust part configured to communicate with the first tube and discharge process residues inside the processing space to the outside; and a plasma reaction part provided outside the first tube, and configured to decompose, with plasma, the process gas supplied from the gas supply part and provide the decomposed process gas to the processing space.

Abstract: Exemplary etching methods may include flowing a hydrogen-containing precursor into a semiconductor processing chamber. The methods may include flowing a fluorine-containing precursor into a remote plasma region of the semiconductor processing chamber. The methods may include forming a plasma of the fluorine-containing precursor in the remote plasma region. The methods may include etching a pre-determined amount of a silicon-containing material from a substrate in a processing region of the semiconductor processing chamber. The methods may include measuring a radical density within the remote plasma region during the etching. The methods may also include halting the flow of the hydrogen-containing precursor into the semiconductor processing chamber when the radical density measured over time correlates to a produced amount of etchant to remove the pre-determined amount of the silicon-containing material.

Abstract: A manufacturing method of a semiconductor device includes: forming a second conductive type layer over a first conductive type layer; and forming a trench by etching the second conductivity type layer by a plasma etching process to expose the first conductivity type layer. The etching of the second conductivity type layer includes: performing a spectroscopic analysis of light emission of plasma; detecting an interface between the first conductivity type layer and the second conductivity type layer based on a change in emission intensity; and stopping the etching of the second conductivity type layer when an end point is determined based on a detection result of the interface.

Abstract: Tracer gas sensing device comprising a gas discharge cell having cell walls defining a discharge volume and a tracer gas inlet into the discharge volume, an optical spectrometer arrangement having a radiation source on a first side of the discharge cell for emitting radiation into the discharge cell and a radiation detector on a second side of the discharge cell opposite to the first side for detecting radiation which was emitted by the radiation source through the discharge volume, and electrodes on opposing sides of the discharge cell for generating a plasma within the discharge cell, said electrodes being unexposed plasma electrodes. The discharge cell may be a dielectric barrier discharge cell and the electrodes may be powered by an AC power source.

Abstract: In time-series data indicating light emission of plasma when plasma processing is carried out on a sample by generating the plasma, an analysis apparatus creates combinations of a plurality of light emission wavelengths of elements and a plurality of time intervals within a plasma processing interval and calculates, for each of the combinations of the wavelengths and the time intervals, a correlation between an average value of light emission intensity and the number of times the plasma processing is carried out on the samples for each of the combinations of the wavelengths and the time intervals that have been created. Thereafter, the data analysis apparatus selects, as a combination of the wavelength and the time interval used to observe or control the plasma processing, a combination of a wavelength of light emitting from a specific element and a specific time interval having a maximum correlation.

Abstract: Described herein are architectures, platforms and methods for determining endpoints of an optical emission spectroscopy (OES) data acquired from a plasma processing system. The OES data, for example, includes an absorption—step process, a desorption—step process, or a combination thereof. In this example, the OES data undergoes signal synchronization and transient signal filtering prior to endpoint determination, which may be implemented through an application of a moving average filter.