Abstract: A scanning electron microscope capable of producing a stable image even if an automated focusing operation is being performed. The microscope has a secondary electron detector, a vertical scanning signal generator, and an image memory connected with a CRT. The output signal from the detector is supplied to the image memory via an amplifier and an A/D converter and also to an integrator via a filter circuit and an absolute value circuit. The specimen is scanned to produce an image and is substantially simultaneously scanned to gather data for adjusting the focus by stepwise adjusting the objective lens current. The stepwise adjustment of the objective lens takes place only during scanning to gather data.

Abstract: An electron linear accelerator for use in industrial material processing, comprises an elongated, resonant, electron accelerator structure defining a linear electron flow path and having an electron injection end and an electron exit end, an electron gun at the injection end for producing and delivering one or more streams of electrons to the electron injection end of the structure during pulses of predetermined length and of predetermined repetition rate, the structure being comprised of a plurality of axially coupled resonant microwave cavities operating in the .pi./2 mode and including a graded-.beta. capture section at the injection end of the structure for receiving and accelerating electrons in the one or more streams of electrons, a .beta.

Abstract: An electron microscope is provided which is reduced in total weight and shape. An electron gun cathode and an electron gun lens are enclosed in an electron gun chamber. An electron beam emitted from the electron gun chamber is converged by an objective lens to irradiate a wafer. Each of the electron gun lens and the objective lens is formed as an electrostatic field lens.

Abstract: An electron beam writing system which permits a relatively low voltage to be applied to perform high speed focus correction with high accuracy. The electron beam writing system includes a focus corrector arranged inside a lens which provides the largest product of the magnification factors of the lens and all succeeding lenses and the optical path length of the lens at issue. Thus, the electron beam provides high sensitivity and a small change in the magnification ratio due to the correction.

Abstract: A pattern inspection apparatus is designed to quickly and accurately perform an inspection of an inspection sample, such as a mask or a wafer or the like by irradiating electron beams onto the inspection sample and detecting secondary or backscattered electrons reflected from the surface of the inspection sample and/or transmitted electrons passing through the inspection sample. The pattern inspection apparatus includes an electron beam generator including at least one electron gun for generating at least one electron beam irradiating onto the surface of the inspection sample. A movable support is provided for supporting the inspection sample. The apparatus also includes a detector unit having a plurality of electron detecting elements for detecting electrons containing information related to the construction of the inspection sample and a detection signal processor for processing simultaneously or in parallel formation the outputs of the electron detecting elements of the detector.

Abstract: The method includes the steps of assembling one or more blanks (1) in supporting means (2, 3) so that the or each blank occupies at least the space to be occupied by elongate electrodes and, without disturbing the position of the blanks relative to said supporting means, removing material from all said blanks to generate said electrodes in position in said supporting means. Preferably the material is removed by an electrode-discharge machining (EDM) process, e.g. diesinking. The method avoids time-consuming alignment of preformed electrodes in said supporting means.

Abstract: An improved scanning electron microscope is disclosed which includes a compact, replaceable electron beam emitter assembly and concentric liner tubes. The concentric liner tubes extend through a central portion of electromagnetic lenses for forming an evacuated path for the electron beam. An outer sealing jacket is provided for forming a vacuum seal with the column assembly sufficient to maintain a vacuum within the outer sealing jacket. A conductive inner liner tube positioned within the outer sealing jacket is adapted to have the electron beam pass therethrough. The inner liner tube provides supports for spray baffles and/or beam shaping orifices. The improved electron beam emitter assembly within the gun assembly includes a filament clamped between a front plate and a back plate by clamping screws. The clamping screws additionally hold an adjustable grid against the front plate.

Abstract: An object of the present invention is to realize a field-emission transmission electron microscope which is able to cope with both observation of an electron-microscopic image of a high brightness and microanalysis. A low aberration condenser lens 4 is disposed at the farthest position from a specimen 7, and a short focal length lens 5 is disposed at the midpoint between the specimen 7 and the condenser lens 4. In the case of an observation of an electron-microscopic image, the condenser lens unit is operated for enlargement in which the condenser lens 4 and the condenser lens 5 are driven in an interlocking motion. When the size of a beam spot on a specimen is to be reduced, a condenser lens 6 disposed close to the specimen between the condenser lens 5 and the specimen 7 is driven to make the condenser lens unit be operated for reduction.

Abstract: A magnetic immersion field emission electron gun has a vacuum vessel having a central axis in a predetermined direction, a cathode arranged along the central axis of the vacuum vessel for generating an electron beam, an anode for forming an electron beam path by accelerating a generated electron beam in the central axis direction, an electrostatic lens arranged between the cathode and anode for generating an electric field which focuses an accelerated electron beam toward the central axis, a magnetic field generating element arranged around the electron beam path for generating a magnetic field for focusing the electron beam in order to preventing a diameter of the electron beam from expansion by an aberration of the electrostatic lens, and a moving mechanism for moving the magnetic field generating element at a position where a peak point of a strength of the magnetic field generated by the magnetic field generating element coincides with a portion where the aberration of the electrostatic lens becomes most

Abstract: A particle-beam column comprising a needle-type ions source such as a liquid metal ion source, one or more round lenses, and a plurality of interleaved quadrupole lenses, by means of which the chromatic aberration of the column may be reduced or entirely compensated. Also an ion-beam column comprising a liquid alloy ion source, interleaved quadrupole lenses, and a Wien velocity filter, whereby a focused beam of ions of a single atomic number may be produced. Such columns produce a more finely focused beam than columns based only on electrostatic lenses, and allow increased lens apertures and larger beam currents.

Abstract: An optic column is provided to obtain a micro beam in simple structure. The optic column has a line cathode and multi-pole lenses arranged in three steps. A beam orbit in the major axis direction (X direction) and a beam orbit in the minor axis direction (Y direction) cross each other on the image plane. A ratio of magnification Mx of X-directional orbit to magnification My of Y-directional orbit is coincident with a ratio of width W to length H of the line cathode.

Abstract: A system for ion-beam imaging of a structure of a mask on a wafer has a two-lens set between the mask and the wafer which is one of the following combinations: (a) two accelerating Einzel lenses; (b) an accelerating immersion lens and a decelerating immersion lens wherein the accelerating immersion lens is the first collecting lens following the mask; (c) an accelerating immersion lens and a decelerating asymmetric Einzel lens wherein the accelerating immersion lens is the first collecting lens following the mask; (d) an accelerating asymmetric Einzel lens and a decelerating immersion lens wherein the accelerating asymmetric Einzel lens is the first collecting lens following the mask; and (e) an accelerating asymmetric Einzel lens and a decelerating asymmetric Einzel lens wherein the accelerating asymmetric Einzel lens is the first collecting lens following the mask.

Abstract: A system for reducing aberration effects in a charged particle beam. The system includes a source of charged particles, such as electrons or ions, and various building blocks for operating on the charged particle beam to generate a desired particle beam pattern. These building blocks can include at least one of a uniform magnetic field component and a uniform electrostatic field component arrangeable in different combinations, enabling coefficients of spherical and chromatic aberration to be canceled out thereby providing a charged particle beam having greatly diminished aberration.

Abstract: In a linear accelerator which accelerates a beam of charged particles along a beam axis and which comprises a conductive cylinder defining a hollow space, first through fourth conductive vanes are arranged clockwise in the hollow space around the beam axis with an azimuthal interval of 90.degree. left between two adjacent ones of the vanes and are electrically connected to the conductive cylinder so as to be excited by a TE.sub.11N mode on supply of electric power to the conductive cylinder and to induce a quadrupole electric field among the first through the fourth conductive vanes where N is one of 0, 1, 2, . . . . In the TE.sub.11N mode, (N+1) sets of excitation members are arranged each of which is composed of first and second conductive plates opposite to each other and projected towards the beam axis, a first intermediate conductive member connected to two of the first through the fourth conductive vanes, and a second intermediate conductive member connected to the remaining conductive vanes.

Abstract: The invention relates to an imaging system for charged particles having a correction unit for correcting an objective lens. The correction unit essentially includes a beam deflector and a mirror which reflects the incoming particle beam. A first symmetry plane of the deflector is imaged in the mirror. The mirror images this first symmetry plane at an imaging scale of 1:1 in a second symmetry plane of the deflector. At the same time, the symmetry planes are either intermediate image planes or diffraction planes. With the high symmetry of the imaging system, the condition is achieved that the aberrations of the second order caused by a one-time passthrough through the deflector are cancelled after the second passthrough. The mirror can be so adjusted that its negative chromatic aberration compensates for the chromatic aberration of the objective lens and the other lenses. The spherical aberration can be compensated independently thereof with the aid of a hexapole which is centered in a diffraction plane.

Abstract: An electron beam projection apparatus including electron injection unit for irradiating an object with an electron beam. The electron injection unit includes a substrate, a cathode formed on the substrate for emitting the electrons, a control electrode formed on the substrate via an insulation layer in a manner enclosing the cathode for accelerating the electrons, and an anode formed on the control electrode via an insulation layer in a manner enclosing the cathode for converging the electron beam. The electron beam projection apparatus further including detecting unit formed on the anode via an insulation layer for detecting secondary electrons emitted from the object irradiated with the electron beam and differential pumping unit for producing a low vacuum condition in an space where the electron beam travels from the microscopic electron injection unit to the object.

Abstract: A radio-frequency quadrupole which includes four, extruded, identical cross-section, elongate structural components, each of which lacks any longitudinally extending plane of bilateral assembly. Joinder of these components to form a quadrupole body results in an overall axial cross-sectional configuration which has an infinite number of claims of inverted bilateral symmetry extending in all radial directions relative to the long axis of that body. Coolant-carrying boreholes extend longitudinally throughout each component with precise location and proper longitudinal-axial-parallelism.

Abstract: To prevent electric charge up from being accumulated on the plane scanned by an electron beam and further to improve the S/N ratio, an electron beam irradiating apparatus comprising: position information signal outputting section for outputting position information signals, in sequence to designate positions at which an electron beam is irradiated on a plane scanned by the electron beam, so as to designate the irradiation positions at random; and irradiation controller for controlling the electron beam to irradiate the electron beam at the irradiation positions in response to the outputted position information signals. Further, to integrate an photoelectric signal over a sufficient time interval within the period of the pixel clock signal, the electric signal detecting circuit comprises a plurality of sample hold circuits and a selecting circuit for selecting and activating the sample hold circuits in sequence.

Abstract: A method of automatically and accurately accomplishing focusing and astigmatism correction in an electron beam apparatus such as a scanning electron microscope. The electron beam is raster scanned to scan a specimen in two dimensions. If the obtained signal intensity distribution curve has only one peak, the peak position P2 of a curve obtained by raster scanning the beam vertically is detected. The peak position P1 of a curve obtained by raster scanning the beam horizontally is detected. An intermediate position P0 is calculated, using the formulaP0=(P1+P2)/2The intensity of excitation of the objective lens is adjusted to this intermediate position P0. In this way, if two peaks cannot be obtained by a horizontal raster scan of the beam, depending on the state of the surface of the specimen, it is possible to accurately bring the beam into focus at the position of the circle of least confusion. After this focusing operation, an automatic astigmatism correction is made.

Abstract: A lens for a charged particle beam comprises first, second, third and fourth quadrupoles, a first aperture electrode placed in front of the first quadrupole, a second aperture electrode placed between the first quadrupole and the second quadrupole, a third aperture electrode placed between the second quadrupole and the third quadrupole, a fourth aperture electrode placed between the third quadrupole and the fourth quadrupole, a fifth aperture electrode placed behind the fourth quadrupole, means for exciting the quadrupoles to cause them to converge the charged beam to a line near the third aperture electrode, and means for applying voltage to excite the first to fifth aperture electrodes and cause them to produce an octupole lens action for correcting aperture aberration.

Abstract: A method and apparatus for modifying the inner surface of a tube by ion surface modification techniques, such as ion implantation, ion mixing and ion beam assisted coating. The apparatus includes a plasma source, preferably a vacuum arc, a first magnet for guiding the plasma into a drift tube. A second magnet is spaced from the first magnet and has a current running opposite to the first magnet. A radial extractor surrounds the area between the magnets, which form a cusp therebetween. The plasma follows the field lines, exiting the drift tube to the extractor, where the ions are removed and accelerated outwardly in a radial direction. With the entire apparatus placed in a tube, the ions will impact the inner wall of the tube. The resulting ion implantation advantageously modifies the surface, typically increasing wear and erosion resistance, improving corrosion resistance, increasing fatigue life, etc.

Abstract: An electrostatic lens having at least three electrodes and an insulating holder for holding the electrodes, the inner wall of the holder being coated with a silicone carbide film. The silicone carbide film may be formed by means of a vapor deposition method. The energy of an electron beam is set to 1.5 keV or lower. The silicone carbide film may be added with an additive for controlling the electric conductivity of the silicone carbide film. The additive may be nitrogen.

Abstract: An electrostatic lens arrangement of three stages of quadrupole electrodes comprising first, second and third stage electrostatic lens unit connected in series, each electrostatic lens unit including first, second, third and fourth electrode arranged around a circle surrounding a center axis of an ion beam passage with an equal interval of 90.degree. C., wherein the respective first, second, third and fourth electrodes for the first, second and third stage electrostatic lens unit are respectively supported by first, second, third and fourth common supporting rod along respective straight lines while electrically insulating each other.

Abstract: A dynamic correction arrangement for an electron beam projection/deflection system provides high order correction values for deflection in accordance with a correction equation. Particularly as applied to high accuracy telecentric deflection, the coefficients of terms of the correction equation may be determined by calibration for a small number of test points. Correction values may be stored in a look-up table or computed in real time by using a math co-processor in a processing pipeline. The correction provided corrects landing angle errors through the third order in telecentric projection/deflection systems such as systems utilizing variable axis immersion lenses.

Abstract: The accuracy of a double-deflection beam blanker is dramatically improved for all blanker voltages by using provided, closed-form, trajectory equations to determine the blanker geometric parameters and compensating for fringe-field effects in order to precisely determine the delay line length for control of an electron or ion beam. This delay line length is maintained by placing alignment apertures above and below the blanker.

Abstract: Imaging electron-optical apparatus, e.g. photo-electron emission microscope, which has an electron-optical imaging system in which electrons of an electron pattern to be imaged are accelerated to a maximum energy of at least several 10.sup.3 electron volts and a real image of said electron pattern is produced in an image plane, and further has a channel-plate image intensifier which receives and amplifies the electrons which form the real image; the image intensifier has a luminescence screen positioned in the path of the amplified electrons. A decelerating electrostatic lens is provided in the path of the electrons before they enter the image intensifier, to produce an electrical field which reduces the energy of the electrons which enter the image intensifier; the energy is reduced to a value at which said channel-plate electron intensifier has a higher sensitivity or gain than with the maximum acceleration energy in the imaging system.

Abstract: An electron beam instrument typified by a scanning electron microscope. The instrument does not suffer from defocus if the accelerating voltage is varied. The instrument has an objective lens, an electron gun emitting an electron beam, a control unit, an accelerating voltage-setting portion, first and second reference voltage sources. The control unit digitizes the accelerating voltage set by the accelerating voltage-setting portion and applies the digital voltage to the two reference voltage sources. The first voltage source consists of a first ROM and a first D/A converter. Similarly, the second voltage source consists of a second ROM and a second D/A converter. A signal V.sub.ref1 indicating the optimum objective lens current at a first working distance is stored in the first ROM. A signal .DELTA.V indicating the difference between the optimum objective lens current at a second working distance and the optimum objective lens current at the first working distance is stored in the second ROM.

Abstract: A reflection mask has a reflection pattern which is formed on a required portion of the surface of a substrate and on which a voltage sufficient to reflect incident electrically charged beams is applied, and a non-reflection pattern which is formed on the other portion of surface of the substrate and on which a voltage sufficient to emit the electrically charged beams to the non-reflection pattern is applied.

Abstract: An electron beam exposure system comprises an electron beam source for producing an electron beam, an electron lens system for focusing the electron beam on an object, and an electrostatic deflector supplied with a control signal for deflecting the electron beam in response to the control signal, wherein the electrostatic deflector comprises a sleeve extending in an axial direction and having an outer surface and a corresponding inner surface. A plurality of electrodes are provided on the outer surface of the sleeve with a separation from each other in a circumferential direction. The sleeve has a finite conductivity such that an electric current flows along the sleeve in the circumferential direction when a control voltage is applied across the plurality of electrodes.

Abstract: A precision electrostatic lens system is formed from lens electrodes having high precision inner bores by aligning said bores on a ceramic rod, inserting segmented glass spacers between adjacent electrodes, and brazing the combination together to provide a monolithic structure capable of maintaining accurate tolerances.

Abstract: An electron beam apparatus for applying an electron beam from an electron source onto a target plane is characterized by comprising one sheet of electrode disposed between said electron source for emitting the electron beam in parallel or substantially parallel and a target arrangement position, and a power source for supplying a desired voltage to said electrode.

Abstract: A combination apparatus having a scanning electron microscope includes equipment for performing any of observing, measuring and processing operations on a sample placed in a sample chamber. The sample chamber contains a focused electron beam irradiating unit apart from the components for performing the observing, measuring and processing operations. The focused electron beam irradiating unit irradiates a finely focused electron beam onto the surface of the sample for electron microscopic observation in scanning fashion. This setup allows the observing, measuring or processing equipment to combine with the scanning electron microscope without appreciably enlarging the construction of the combination apparatus.

Abstract: A fast atom beam source used e.g., for sputtering, includes an ion source that emits an ion beam and an electron gun that emits an electron beam at a speed substantially equal to the speed of the ions in the ion beam emitted from the ion source and in the same direction as that of the ion beam. The fast atom beam source may also include a speed control for regulating the speed of the electrons in the electron beam emitted from said electron gun to a level substantially equal to that of the speed of the ions in the ion beam, and a deflector which aligns the electron beam with the ion beam.

Abstract: In an electron microscope correction of spherical and chromatic aberration can be achieved in a number of freely adjustable directions by using a multipole correction element whereby a magnetic or electrostatic octupole field, rotatable about the optical axis, or a combined rotatable magnetic and electrostatic quadrupole field is generated. A corrected overall image can be obtained by combination of images successively corrected in different directions. In the case of holographic images, correction in the direction perpendicular to the line direction in the hologram enhances the accuracy of phase determination. A correction element of this kind, having comparatively small dimensions of from 1 to 2 cm, can be simply mounted, notably in a transmission electron microscope, in a space provided for the stigmator.

Abstract: A charged particle beam deflector has a simple structure for providing a uniform potential distribution over each blanking aperture. The deflector is easy to operate, and stabilizes the shape of a charged particle beam component passing through each blanking aperture even with a low deflection voltage. A pair of deflecting electrodes are arranged on opposing inner walls of each blanking aperture. A voltage applied to the deflecting electrodes is controlled to correctly deflect the charged particle beam component passing through the blanking aperture. A pair of resistance films are arranged on the other opposing inner walls of the blanking aperture, to connect both sides of the deflecting electrodes.The deflector may employ patterned beam generating apertures. A pair of deflecting electrodes are formed on opposing inner walls of each of the apertures. A voltage applied to the deflecting electrodes is controlled to correctly deflect a charged particle beam component passing through the aperture.

Abstract: An ion beam deposition system in which ions of different masses and from different sources are independently steered into different parts of an analyzer magnet to be converged into a single wide beam which maintains a perpendicular relationship between the beam and the target. The beam is decelerated by a slit type deceleration lens to an energy suitable for deposition. The target is then scanned across the decelerated beam. The beam is maintained at high current and low pressure by confining electrons away from the magnet and/or adding energy to the low pressure atmosphere inside the analyzer magnet to produce a plasma of electrons and charged particles in order to provide adequate neutralizing of the space charge of the beam.

Abstract: The invention typically provides a double focusing mass spectrometer comprising an ion source (55), an ion momentum analyzer (56), a multichannel detector (58) and a multielectrode electrostatic ion-energy analyzer (57), wherein the energy dispersing field is generated by arrays of electrodes disposed in groups above and below the ion beam. By appropriate selection of the potentials applied to the electrodes, the focusing properties of the analyzer can be changed, allowing different extents of the mass spectrum to be accurately focused on the face of the detector (58) as it is tilted by the actuator (61) at different angles to the ion beam (64) emerging from the analyzer (57). This enables the spectrometer to simultaneously record either a small part of a mass spectrum at high resolution or a larger part at a lower resolution. Alternative arrangements of the detector which allow a similar result to be obtained are also disclosed.

Abstract: The apparatus of the present invention selects from particles emitted by a radioactive source those particles having momentum within a desired range and focuses the selected particles in a beam having at least one narrow cross-dimension, and at the same time attenuates potentially disruptive gamma rays and low energy particles. Two major components of the present invention are an achromatic bending and focusing system, which includes sector magnets and quadrupole, and a quadrupole doublet final focus system. Permanent magnets utilized in the apparatus are constructed of a ceramic (ferrite) material which is inexpensive and easily machined.

Abstract: A pair of lenses for an ion beam deposition device permit the formation of an ion beam with good beam characteristics and the variation of ion energy over an extremely wide range and at high perveance. An ion extractor is provided with a shield with a shape closely corresponding to the extraction electrode aperture to avoid sputtering and the introduction of contaminants into the material deposition process at low beam energies at the extractor. A three electrode deceleration lens allows high current beams to be decelerated to an energy of 25 eV for deposition, under some conditions. The combination of lenses allows the ion energy in the beam to be changed at particular regions along the beam so that optimal energies for focussing, mass analysis and deposition can be obtained.

Abstract: A field emission source is used in conjunction with a three element asymmetric lens system to provide an electron gun having greater magnitude beam currents focused on a smaller spot size than has been previously possible for intermediate energy beams. The three element asymmetric lens system has a lower spherical aberration than prior art electrostatic guns and a very low chromatic aberration coefficient, enabling precise focusing of beams with large currents and energy spreads. The electron gun produces high current densities in beam focused on small spot areas, despite the relatively large acceptance angle and energy spread of the source beams.

Abstract: An electrostatic analyzer (1) for dispersing a beam of charged particles (10) according to their energy comprises two groups (2, 3) of spaced-apart linear electrodes (4, 8, 9, 20) respectively disposed above and below the charged particle beam. The potentials of the electrodes (4, 8, 9, 20) in each group progressively increase from one to the next, thereby providing an electrostatic field in a central plane (7) between the groups which is capable of deflecting the charged particles along different curved trajectories (11, 12) according to their energies. Various mass spectrometers incorporating such an analyzer are also disclosed.

Abstract: A solid state, quantum mechanical electron/hole wave device in the form of a switch or multiplexor includes a layer of semiconductor material supporting substantially ballistic electron/hole transport and a periodic grating structure formed in the layer of semiconductor material, with the grating structure comprising a modulation in electron/hole potential energy and/or effective mass. Preferably, means are provided for applying and varying the grating modulation. By constructing the device to divide the input substantially completely into two output beams (to operate in the Bragg regime), a useful switch is provided. Likewise, by constructing the device to divide the input into a selected number of three or more output beams (to operate in the Raman-Nath regime), a useful multiplexor is provided.

Abstract: The disclosed mass spectrometer has, positioned between an input slit and an output slit, crossed by particles emitted by a sample, an optical coupling system placed between two respectively electrostatic and magnetic sectors. The optical coupling system comprises at least two lenses with slits oriented respectively along a first direction in which the path of the ions is incurvated by the electrostatic and magnetic sectors and along a direction perpendicular to the plane of the path. The position of the two lenses on the optical axis of the spectrometer is determined to obtain a compensation for the chromatic dispersions throughout the axis downline from the spectrometer, a stigmatic image of the input slit in the output plane of the spectrometer and a stigmatic image downline from the spectrometer.

Abstract: A charged particle beam apparatus includes at least a charged particle source and an objective lens for converging onto a sample a charged particle beam emitted by the charged particle source. The objective lens is an electrostatic objective lens constituted by a first and a second electrode positioned opposite to each other and having openings through which the charged particle beam passes. The first electrode and the second electrode are located close to the charged particle source and to the sample, respectively. The first electrode is supplied with a positive potential as opposed to the second electrode when the charged particle beam is a negatively charged particle beam. Conversely, the first electrode is supplied with a negative potential as opposed to the second electrode when the charged particle beam is a positively charged particle beam. The principal plane of the electrostatic objective lens is located on the side of the sample below the bottom plane of the second electrode.

Abstract: A charged particle beam lithography system includes a beam source of a charged particle beam, a beam shaping aperture for providing a predetermined cross section to the charged particle beam, a first focusing system for focusing the charged particle beam on a first crossover point located on the optical axis, a second focusing system provided between the first crossover point and an object for focusing the charged particle beam on a second crossover point located on the optical axis, a beam deflection system for deflecting the electron beam such that the beam is displaced on the surface of the object, a stage for supporting the object, a mask provided in a vicinity of said first focusing system, and an addressing system for selectively deflecting the charged particle beam such that the charged particle beam is passed through a selected aperture on the mask.

Abstract: An apparatus includes an optical unit for effecting an exposure of a sample to a charged particle beam and a control unit for effecting a deflection control of the charged particle beam. The control unit calculates a basic waveform based on the scanning of a beam having a constant width on a mark pattern, divides a cross section of a selective block pattern into portions by the constant width, calculates respective waveforms based on the scanning of only a beam of each portion using the basic waveform, and sequentially displaces the calculated waveforms with units of the constant width and overlaps the displaced waveforms to determine a forecast waveform. The control unit calculates a compensated deflection data based on a comparison of the forecast waveform and a waveform measured in the actual scanning of the selective block pattern and deflects a beam based on the calculated data to project the beam on the sample.

Abstract: An arrangement is described for extracting charged particles which have been emitted from a sample due to the impact of a primary ion beam. The arrangement comprises an electrode arrangement effective to produce an electric potential which is non-linear along a chosen direction of travel of the particles. A system of einzel lenses is effective to match the trajectories of the particles passing from the electrode means to the analyser of a mass spectrometer.

Abstract: The present invention is directed to a method for selectively scaling the dimensions of a field emission electron gun. The electron gun includes a field emission tip followed by a dual electrode immersion lens. The lens consists of two planar electrodes separated by a dielectric layer. A well defined circular hole is present at the center of each electrode and the dielectric layer. A high scaling factor is applied to the region consisting of the first electrode and the emission tip, reducing the first electrode thickness and bore diameter and the distance between the tip and first electrode to the micrometer range. A weaker scaling factor is applied to the bore diameter of the second electrode and the spacing between the electrodes such that the second electrode bore diameter and distance between the electrodes are approximately equal and are greater than the first electrode thickness and bore diameter and the distance between the tip and first electrode.

Abstract: Ion beam apparatus provides beam blanking by utilizing an aperture through which the beam passes during unblanked periods, and elements for deflecting the beam during blanking so that the beam is deflected away from the aperture. Electrodes between the aperture element and the deflecting elements generate a potential exceeding the kinetic energy of charged particles emitted from the aperture element due to ions striking the aperture element during blanking. Charged particles emitted from the aperture element are thus prevented from striking the beam deflecting elements, thereby reducing hydrocarbon cracking, insulator accumulation, and charge accumulation on the deflecting elements. Beam stability is thereby enhanced. Charged particles emitted from the aperture element are also returned to the aperture element, so that an accurate measure of ion beam current is obtained by measuring current flow to the aperture element.

Abstract: A portable mass spectrometer is described having one or more electrostatic focusing sectors and a magnetic focusing sector, all of which are positioned inside a vacuum chamber, and all of which may be adjusted via adjustment means accessible from outside the vacuum chamber. Mounting of the magnetic sector entirely within the vacuum chamber permits smaller magnets to be used, thus permitting reductions in both weight and bulk.