Abstract: A multi-zoned x-ray exposure detector for a scanning fan beam x-ray system comprises an electron emitter which upon exposure to x-rays emits electrons into a channel defined by an isolation walls. The channel contains air which is ionized. The isolation walls extend parallel to the direction of the sweeping fan beam behind the electron emitter. Within each channel formed by the isolation walls, is a collection electrode biased in voltage with respect to the electron emitter to collect the ions. The intersection of the beam and the channel defines a zone in which exposure may be determined.The current from the collection electrode is amplified by an amplifier to produce a signal related to x-ray exposure of each zone.

Abstract: There is disclosed an electron microscope having an auxiliary lens inserted between the final-stage focusing lens and a set of objective lenses. The microscope is further equipped with a circuit which varies the intensity of the auxiliary lens so as to fix the position of a crossover image irrespective of the intensity of the final-stage focusing lens. The crossover image is created between the auxiliary lens and the set of objective lenses by the auxiliary lens. An aperture plate having an objective aperture is disposed at the fixed position of the crossover image.

Abstract: This invention discloses a composite electrostatic optical apparatus and methods of using in micro fabrication processes or similar processes requiring the use of optical columns provided with electron or ion beams. The composite optical apparatus includes a series of units, each having multiple electrodes, that combine to form a composite optical structure that when coupled to a power supply define a three-dimensional potential distribution function. The shape of the composite optical structure is determined by the geometrical shape of an individual electrode and the arrangement of electrodes around the z-axis that forms a unit. The composite optical apparatus may be placed in an optical column as an electrosttic deflector, as a focusing electrostatic lens or as both deflector and focusing lens, or any combination of them.

Abstract: For the selection of a pure electron beam or ion beam from a mixed beam, use is made of a combined electrostatic/magnetic deflection system, the electrostatic deflection system being formed, for example, by a tilted electrode system of a cascade system of electrodes present in the apparatus. The pure beam is directed onto an object to be irradiated as near to the object as possible in order to prevent renewed mixing.

Abstract: This invention relates to a fine focusing lens for charged particle beams. Since the field lines of the poles are additive, and the lens 50 can be made to be very small, the lens can be used inside of a coarse focusing lens 51. The lens 50 employs a plurality of poles 1-32, evenly spaced, circumferentially around the lens. The poles may be wires 38 for electromagnetic poles or plates 35 for electrostatic poles. Each pole can be tagged to induce a frequency, pulse, or phase signal on the charged particle beam 49, so that the effects of each pole on the beam can be separately detected. The beam can therefore be focused by seeing the effects of and adjusting each pole separately. As the number of poles increases, the ability to finely focus a charged particle beam increases. The lens 50 as shown in the figures has 32 poles, which is enough to very finely focus a charged particle beam.

Abstract: A charged particle beam is formed to a relatively larger area beam which is well-contained and has a beam area which relatively uniformly deposits energy over a beam target. Linear optics receive an accelerator beam and output a first beam with a first waist defined by a relatively small size in a first dimension normal to a second dimension. Nonlinear optics, such as an octupole magnet, are located about the first waist and output a second beam having a phase-space distribution which folds the beam edges along the second dimension toward the beam core to develop a well-contained beam and a relatively uniform particle intensity across the beam core. The beam may then be expanded along the second dimension to form the uniform ribbon beam at a selected distance from the nonlinear optics. Alternately, the beam may be passed through a second set of nonlinear optics to fold the beam edges in the first dimension.

Abstract: The invention relates to an imaging corrector of the Wien type which is especially suitable for use in an electron microscope. The corrector includes an arrangement of at least eight electrodes and at least eight magnetic poles and is mounted between two electron lenses. The corrector simultaneously corrects the chromatic and spherical aberrations especially of electron lenses of low-voltage electron microscopes. The corrector begins and ends at intermediate image planes and has an intermediate image plane in its center. The intermediate image plane at the center coacts with two symmetry planes located between the intermediate image planes for the desired imaging characteristics. All chromatic and spherical aberrations for electrons of any desired energy can be corrected with two of the correctors coacting with a thick telescopic round lens disposed therebetween.

Abstract: A lens system for a beam of energetic ions employs a focusing element in combination with a defocusing element. In a preferred embodiment, the focusing element is in the form of an electromagnetic lens, such as a solenoid, through which is propagated the beam of energetic ions. Also in the beam path is provided a defocusing element which also may be in the form of an electromagnetic element, such as a solenoid, or a magnetic element, such as a magnetic dipole. Alternatively, an electrostatic defocusing element may be employed in the practice of the invention. In a magnetic embodiment, defocusing is achieved by propagating the beam of energetic ions around the exterior of the defocusing element. The focusing element may be of the electrostatic variety, such as a radial an electric field lens. In other embodiments, a further focusing element, or a further defocusing element may be arranged in the beam path.

Abstract: A transmission electron microscope for irradiating a specimen with an electron beam, wherein the electron beam passed through the specimen is imaged on an imaging screen by a magnifying lens system. The electron microscope includes a deflector for deflecting the electron beam to thereby scan a specimen with the electron beam, and a memory for storing a range within which the specimen is to be preliminarily scanned with the electron beams and the number of scans to be performed. The specimen is preliminarily scanned with the electron beam within the preliminary scan range for the number of times on the basis of the corresponding data read out from the memory.

Abstract: An objective lens which is a component of a scanning electron microscope and wherein the electron source or the intermediate image of the electron source is reduced by condenser lenses is imaged onto a specimen (PR). The objective lens comprises an asymmetrical magnetic lens (ML), an electrostatic immersion lens (OE/UE) superimposed on the magnetic lens (ML), and electrode (ST) which is connected to a variable potential (U.sub.ST) so as to control the intensity of the current of secondary (SE) and back-scattered electrodes released from the specimen (PR), and a detector (DT) mounted immediately above the magnetic lens (ML). The electrodes (OE, UE) of the immersion lens are connected to potentials so that an electrical field which decelerates the primary electrons (PE) is formed inside the objective lens.

Abstract: An electron-beam scanning device (10) includes two pairs of plates (22 and 24, 64 and 66) that are oriented at right angles to each other. The plates cause electric fields oriented at right angles in a deflection region (68) through which an electron beam passes. Each pair of plates comprises the inner conductor and one of the outer conductors of a stripline section that conducts a deflection signal. The stripline section is matched in characteristic impedance to the coaxial cable by which the deflection signal is transmitted to the plates. A stop plate (28) ordinarily prevents the electron beam from reaching its target (30) but has an aperture (26) into which the beam can be momentarily deflected to cause a pulse of beam current to hit the target (30).

Abstract: A target rotated about an axis is subjected to large surface irradiation by ons which spread in the direction of the target from a focus and in which peripheral ions are reflected inwardly, preferably by an array of electrode elements of alternatingly opposite polarity so that the reflecting electrostatic field is located only at the periphery of the beam and immediately adjacent the interior of the ion reflector.

Abstract: An image correcting apparatus for correcting distortion appearing in an image produced by electron beam scanning in a SEM under the influence of electric, magnetic and mechanical vibrations through arithmetic operations for eliminating the distortion. Installation of electric shield, magnetic shield and vibration-damping structure is thus rendered unnecessary.

Abstract: An array wand for charged particle beam shaping and control applications can selectively and accurately shape or deflect single or multiple beams of charged particles so as to delineate a desired pattern in a substrate. The wand preferably takes the form of a monolithic block of material, for example semiconductor material, having one or more cavities etched through it which serve to form a collimated beam of particles. The array wand employs an Einsel lens structure which contains electrostatic electrodes for precise focusing of the beams of charged particles. The Einsel lens includes successive layers on the monolithic substrate which simultaneously act as a lens, an aperture, and a beam line for beams of charged particles.The array wand may be manufactured, in large quantity with precision, and may be employed to form small focused beams.

Abstract: A charged-particle beam pattern drawing apparatus for drawing, by use of a charged-particle beam, a desired circuit pattern on a workpiece having a surface coated with a sensitive material, is disclosed. The apparatus includes a data source having data stored therein related to the circuit pattern, a plurality of charged-particle beam producing sources for emitting charged-particle beams toward the workpiece, in accordance with the data supplied thereto from the data source, and a plurality of deflecting electrodes each being provided for a corresponding one of the charged-particle beam producing source, for deflecting the charged-particle beams from the charged-particle beam producing sources independently of each other and in accordance with the data supplied from the data source.

Abstract: An electron beam head particularly suitably usable in an electron beam pattern drawing apparatus or otherwise is disclosed. The electron beam head includes an electron beam source and an electron beam detector which are provided on a common base member. Secondary electrons and/or reflected electrons caused when an electron beam emitted from the electron beam source impinges upon a workpiece or an object to be examined, are detected by the detector. These secondary electrons and/or reflected electrons can be efficiently collected and detected and, on the basis of which, the information concerning the position or otherwise related to the workpiece or the object to be examined can be detected precisely.

Abstract: In a high resolution imaging system for close inspection of sub-micrometer structures, a scanning electron microscope includes a detector objective essentially composed of an immersion lens and an annular detector which is arranged between a source side electrode lying at a positive potential and a middle electrode of the immersion lens which likewise lies at a variable positive potential and is arranged concentrically relative to a beam axis of a scanning microscope. The middle electrode and the source side electrode are preferrably formed as truncated cones. The two-stage deflection element for positioning the primary electron beam on the specimen is preferrably integrated into the source side electrode of the immersion lens, the source side electrode being composed of an annular diaphragm and a hollow cylinder.

Abstract: An ion projection lithography system provides an immersion lens between the mask and the substrate, a mask between the immersion lens and the ion source and ExB fiter between the mask and the source but cooperating with a diaphragm located close to the crossing point or focal point of the immersion lens so that ions of undesired mass are rejected from the beam by impingement upon the diaphragm while utilizing low magnetic and electrical field strengths of the ExB filter.

Abstract: A circuit includes an inversely fedback operational amplifier having a saw tooth deflection signal applied at its input, as well as a coil pair and an output for deflecting the particle beam of a scanning microscope within a scanned field as established by the coil current. A plurality of resistor elements are selected by a switch and a constant current source for feeding a direct current is provided to effect the image displacement at a connection P between the coil pair and respective one of the resistor elements. Since the direct current flows only through the coils but not through the resistor elements as a consequence of the feedback amplifier, image displacement is independent of magnification established by the respective resistor element.

Abstract: A lithographic process analysis and control system which provides a modeled verison of a lithographic process in the dimensions of feature width, focus and exposure. This system uses the model to quickly determine the range of focus and exposure limits for obtaining the desired feature width. The system has flexible graphic display capability for displaying graphic representations of the data as measured and modeled.

Abstract: An improved radio frequency quadrupole (10) is provided having an elongate housing (11) with an elongate central axis (12) and top, bottom and two side walls (13a-d) symmetrically disposed about the axis, and vanes (14a-d) formed integrally with the walls (13a-d), the vanes (14a-d) each having a cross-section at right angles to the central axis (12) which tapers inwardly toward the axis to form electrode tips (15a-d) spaced from each other by predetermined distances. Each of the four walls (13a-d), and the vanes (14a-d) integral therewith, is a separate structural element having a central lengthwise plane (16) passing through the tip of the vane, the walls (13a-d) having flat mounting surfaces (17, 18) at right angles to and parallel to the control plane (16), respectively, which are butted together to position the walls and vane tips relative to each other.

Abstract: An electron-beam exposure apparatus having a correction function for correcting deflection distortion. The correction function is carried out by the provision of a correcting device including an analog correction unit 35 and a digital correction unit having a memory unit 10 for storing correction data other than data that can be expressed by a cubic function. The capacity of such a memory unit can be made smaller than that of conventional apparatuses.

Abstract: A multipole lens which focus or diffuse a charged particle beam having a metal cylinder mounted on the vacuum vessel and formed plural recesses on the inside wall of the meal cylinder, and plural cylindrical electrodes respectively mounted on said plural recesses through thin insulator. The cross-sectional shape of the each recess is a circular arcwise and the recess is formed along an central axis of the metal cylinder.For example, the multipole lens in the present invention is used in a electrostatic quadrupole lens of mass spectrometer or used in a quadrupole mass spectrometer.In this invention electric charging at the insulator is so little that the orbit of the charged particle beam can be very accurate for a long time.

Abstract: A device for the reflection of low-energy ions defines an ion guide with an array of electrode elements elongated transversely to the direction of the ion beam and in closely spaced relationship with the alternating electrode elements having the same potential but opposite polarity.

Abstract: An electron beam tester (11) utilizes a source (13) of stored electrons to produce a probing beam (14) of short pulses and high intensity. The high intensity improves the signal-to-noise ratio of the potential being measured and is especially suited for measuring potentials in high speed integrated circuits (19) while they are operating. The cyclotron principle is adapted for storing the electrons in an orbital configuration wherein the electrons are clustered in bunches having substantially the same energy level. These characteristics of the electrons in a beam facilitate its operation and control in an electron beam tester for contactless monitoring of voltage potentials in an operating high speed integrated circuit.

Abstract: An apparatus is provided for use in determining the components of an inputted gas mixture. The apparatus includes a single piece body or framework preferably made of a high insulating material, such as ceramic. The body includes a number of cut-outs for receiving or incorporating hardware used in generating ions, controlling their movement, and directing them to an ion collector plate. One of the cut-outs formed in the insulating body receives an ion source assembly. Another of the cutouts is a passageway with metallized material coated along the walls thereof for use in generating an electric field. A third cut-out receives and is associated with a magnet assembly used in directing ion movement towards the collector plate. The single body and cut-out construction reduces the number of individual parts, improves the assembly of such parts and reduces adjustment time associated with such parts.

Abstract: An apparatus for forming a beam includes a housing, electromagnetic coils and/or electrostatic devices for combining a plurality of individual beams into a single beam. Deflection mirrors can be used to deflect the combined beam in a predetermined direction. The beams so combined can include beams of a constant wave or beams in pulse formation. The electromagnetic energy may include visible and non-visible rays, infrared rays, as well as particles. Laser beams can be used employing CO2 X-rays, and Argon, among others. The application has navigational, medicinal, and military uses, among other such as total disruption of enemy's guidance, communication and detection devices employing radar. Also, total incapability of "heat-seeking" aircraft destruction devices to be effective against aircraft fitted with this invention.

Abstract: An improved particle beam apparatus for imaging line-shaped subjects onto an image surface, for example, a row of perforations of an aperture diaphragm on a surface of a semiconductor member to be structured characterized by the isotropic and anisotropic distortions being compensated by the insertion of a first multi-pole optics into the beam path under the subject. Astigmatisms produced by the first multi-pole optics are compensated by a second multi-pole optic that is inserted in the beam path immediately above the imaging lens.

Abstract: In an electron beam exposure system controlled by a computer, the system includes: an electron optical device for generating electron beams and irradiating the beams to a sample on a stage through a plurality of electron lens, a main deflection coil, and sub deflection electrodes, to form predetermined circuit patterns on the sample.

Abstract: An electron control beam apparatus. Previously stored in a memory are amounts of electron beam deflection and astigmatism correction for each of several electron beam probe diameters that may be selected. In accordance with the selected electron beam probe diameter adjustment is made of electron beam deflection due to the axis variation, etc. in a projection lens system and correction of astigmatism. Thus, even if the electron beam probe diameter is changed, the electron beam probe is projected on an unvaried or fixed position on a sample, thereby preventing the electron beam probe from slipping away or moving on an observation screen.

Abstract: A physical instrument for electron-photon interactions and more particularly a physical instrument for production, recording, observation and transmission of temporo-spatially adjustable electron-photon interactions. The instrument comprises a ring-shaped vacuum tube with an electron injector, a linear accelerator, signal deflecting and collimating means operatively connected to the vacuum tube with free-flight intervals of the tube between adjacent means, interaction recording components associated with the tube in the free-flight intervals thereof, and a computer processing unit with a display, which is operatively connected to the accelerator and the interaction recording components.

Abstract: A scan controller for an ion implantation system includes a compensation circuit for generating a scanning signal from a triangle voltage signal. The scanning signal causes an ion beam to be deflected so that, in the variety of geometries describing the orientation of the target in the implantation system, the position of the intersection of the ion beam with the planar target surface changes linearly with time. In one embodiment the scanning signal has the form v(t)=-d -e/(t+c). In other embodiments the compensation circuit approximates the above function by means of polynomials.

Abstract: An electron beam source having a single electron optical axis is provided with two coplanar cathodes equally spaced on opposite sides from the electron optical axis. A switch permits selecting either cathode, and a deflection system comprised of electromagnets, each with separate pole pieces equally spaced from the plane of the cathodes and electron optical axis, first deflects the electron beam from a selected cathode toward the electron optical axis, and then in an opposite direction into convergence with the electron optical axis. The result is that the electron beam from one selected cathode undergoes a sigmoid deflection in two opposite directions, like the letter S, with the sigmoid deflection of each being a mirror image of the other.

Abstract: An apparatus for generating and transporting a charged particle beam. The apparatus has a source which generates the charged particle beam at two current levels, and a magnet system for bending the beam. Particles of different energies are bent along different paths, whereby at a specific height within the magnet system the radial displacement from the beam axis is a monotone function of the difference between the energy and the nominal energy. At this height there is provided an energy selection filter having at least one bimetallic element. This element projects into the beam and, thus, intercepts beam particles; it is designed such that its interception distance decreases with increasing beam current. As a result, the energy range of particles passing the filter is broader at the higher current level broader than at the lower current level.

Abstract: High energy resolution at high electron current at the specimen or at the detector is obtained by an electron beam guiding with focusing energy selection, in particular in an electron spectrometer with emission system and at least one energy dispersive system with different focusing in two mutually perpendicular directions, by a non-circular-symmetrical lens system placed after or before the energy dispersive system and correcting the different focusing of the electrons in the two mutually perpendicular directions such that either the virtual or the real entry stop of the energy dispersive system is imaged on an accessible image plane outside the energy dispersive system or an object outside the energy dispersive system is imaged on the virtual or real exit stop of the latter.

Abstract: Apparatus for producing a pulsed electron beam, particularly adapted for inspecting integrated circuits, includes a beam scanner (10) for causing a continuous electron beam to scan a circle, which beam may emerge from the second of three electrostatic lenses of an electron beam microscope. The beam then passes a deflecting means (12) on the circle for deflecting the beam in a radial direction at selected locations, before being collected by means (14) for collecting the electron pulses from alternate locations to provide a pulsed electron beam.

Abstract: Positive and negative particles are emitted from the same emission portion of a charged particle source. In a charged particle optical system, the ions or electrons having a particularly energy among the emitted charged particles are selectively passed and their blanking is performed. The magnetic field strength and electric strength in the charged particle optical system are preferably controlled by an E.times.B type mass separator or quadrupole mass separator provided in the charged particle optical system.

Abstract: An electrical particle gun with applications in electronic and ionic microlithography for the integrated circuits industry comprises an emission chamber. In the emission chamber are a source adapted to emit the particles and devices for accelerating and focussing the particles. An exciter circuit is electrically connected to a decelerator electrode adjacent the focussing device. This enables pulsed emission of particles with an energy level lying within a predetermined band and filtering of the particles according to their energy level.

Abstract: In a beam shaper superpositions of a deformed first diaphragm and a deformed or non-deformed second diaphragm can be realized by means of a quadrupole system. As a result of this a great freedom for adapting the spot cross-section to the patterns to be formed is obtained, as a result of which the number of writing pulses per pattern and hence the writing time for, for example, a chip can be considerably reduced and in particular non-orthogonal and non-linear transistions in the patterns can be written with greater definition.

Abstract: A charged particle optical system, e.g. an energy or mass analyzer or a lens system, has a plurality of corrector electrodes (20 to 23) spaced apart across a particle beam passing from a monoenergetic source (4) to a focus (6) and dividing the beam into individual portions with central trajectories (30,31,32) the connector electrodes being electrically biassed to deflect the particles of the beam so as to reduce the aberration caused by portions with central trajectories intersecting the optical axis at different distances from the desired focus.

Abstract: An electron beam apparatus in which the electron beam is directed to a sample and secondary electrons from the sample return in the direction of the beam and are deflected sideways to a collector by a first electrostatic deflection means. To compensate for distortion of the spot produced by the beam as a result of the first electrostatic deflection means, a similar deflection means is placed above the first means to correct the distortion and is so biased as to reflect secondary electrons which might otherwise pass the first means. The deflection means are 4-pole electrostatic stigmators. A threshold grid is biased to allow to pass to the first means only those secondary electrons having release speeds from the sample above a certain value.

Abstract: A scanned electron beam system employs an electron beam source using an NEA activated photo-emitter as the cathode. The activated photo-emitter cathode produces a pre-shaped electron beam having a relatively small spot focussed on a target plane. The beam is selectively deflected to scan the beam spot along the target plane to expose desired patterns on that plane. The distance between the cathode and anode can be made large enough to accommodate in situ replenishment of cathode material, such as Cesium, without obstructing the electron optical path. The system includes two vacuum chambers which are differentially pumped through respective ports. The first chamber, in which the anode and cathode are located, is utilized for establishing the required electrostatic field. The second chamber is employed to produce the necessary focussing and selective beam deflection.

Abstract: An integrated charge neutralization and imaging system is disclosed. An energy analyzer is mounted directed above a target surface consisting of a 90 degree spherical electrostatic capacitor with variable voltage on both the inner and outer electrodes. Circular apertures are mounted at the entrance and exit of the analyzer to limit the fringing electric fields and define the beam size. An electrostatic lenses is used for focusing the beam from the electron gun into the virtual object plane of the energy analyzer. It is also used to collect secondary electrons or secondary ions leaving the energy analyzer and focused them into the imaging optics. A defector is used for steering the electron beam onto the axis of the lens. This deflector is also used to steer the secondary electrons or secondary ions into the electron/ion detector, or to steer the secondary ions into the SIMS mass filter entrance aperture.

Abstract: A transmission electron microscope is disclosed, having an electron-energy spectrometer, a first imaging stage of four electron lenses in front of the spectrometer, and a second imaging stage of two more electron lenses following the spectrometer. The parts are so arranged, according to the disclosed structure, and so operated, according to the disclosed method, that a large range of magnifications can be obtained while the object or specimen to be examined remains in a fixed location, without having to refocus when the magnification is changed. The change in magnification occurs by changing the operation of the first imaging stage. The second imaging stage operates at a substantially fixed magnification, its magnification being changed, if at all, only to accommodate the size of the output image from the second stage to size of the available working area of the detector in the final image plane (fluorescent screen, photographic film, or electronic detector).

Abstract: A beam is redirected from an initial direction lying along an initial axis to a final direction lying in a plane which intersects the initial axis (the final direction being other than radially away from the axis) by first redirecting the beam from the initial direction to an intermediate direction lying in the plane, and then redirecting the beam within the plane from the intermediate direction to the final direction.

Abstract: Before detecting the surface state of specific patterns a sample by means of an electron beam tester system, patterns formed in a specified surface area of the sample, are detected by deflecting an electron beam by a deflection coil. Data representing current supplied to the deflection coil, data representing the position of the sample during the pattern-detecting operation, and image signals representing the patterns found in the specified surface area, are stored in a memory. While the specific patterns of a sample are being detected, the electron beam is used to perform a second pattern-detecting operation. Data representing current supplied to the deflection coil during the second pattern-detecting operation, such data representing the position of the sample, and image signals provided by the second pattern-detecting operation representing the patterns formed in the specified surface area, afe compared with those data items already stored in the memory.

Abstract: An electronic beam device is provided for projecting the image of an object on a sample, including two electromagnetic lens reduction stages. A single insulating tube is disposed between an object and the same plane, this tube having an inner metallized face.

Abstract: A cathode (32), a Wehnelt cylinder (2, 36) and an anode (3, 51) are accommodated in an integrated unit in an electron beam apparatus. Extremely accurate positioning of a Wehnelt bore and an anode bore with respect to one another can be achieved in such an assembled unit which is mounted in the apparatus so as to be removable as one unit. An exactly defined distance between the Wehnelt cylinder and the anode can also be adjusted. As a result of the exact mutual positioning, the anode bore can be chosen to be so small that it can also act as a beam aperture so that a smaller electron-optical object as well as a substantial reduction of the mutual electron interaction in the beam is achieved.

Abstract: A charged beam pattern defect inspection apparatus for inspecting pattern defects on materials such as masks or wafers comprising: a collecting charged beam irradiation apparatus including scanning deflection device for accelerating and focusing the scanning beam, and a detector for detecting phenomenon produced by incident particles such as reflected electrons, secondary electrons, cathodeluminescent light, X rays, or absorption currents; a scanning and synchronous signal generator for generating a scanning signal to be control the scanning deflection means and a synchronous signal to fed into an A/D converter; a two-dimensional video memory including an A/D converter and an address signal generator; a video signal operator for operating the video signal stored in the two-dimensional video memory; a stage driving apparatus for driving a stage for holding the material to be inspected, which includes a position detector for detecting the position of the stage; an auxiliary memory device for storing inspection

Abstract: An ion beam source adapted to provide a plurality of parallel planar ion beams the centers of which are superimposed and the planes of which are inclined at an angle to the line joining their centers such that a geometric projection of the ion beams in a direction orthogonal to that joining the centers of the ion beams is continuous.