Abstract: The present invention is an electromagnetic controller assembly for use in ion implantation apparatus, and provides a structural construct and methodology which can be employed for three recognizably separate and distinct functions: (i) To adjust the trajectory of charged particles carried within any type of traveling ion beam which is targeted at a plane of implantation or a work surface for the placement of charged ions into a prepared workpiece (such as a silicon wafer or flat glass panel); (ii) concurrently, to alter and change the degree of parallelism of the ions in the traveling beam; and (iii) concurrently, to control the uniformity of the current density along the transverse direction of traveling ion beams, regardless of whether the beams are high-aspect, continuous ribbon ion beams or alternatively are scanned ribbon ion beams.

Abstract: The present invention concerns a system for the focusing and/or a collimation of an ion beam, in particular a beam of accelerated protons, wherein the system has a lens with a lens body that is permeable to the ion beam, wherein means for the generation of an in particular electrostatic field, propagating within the lens body and focusing the ion beam, are provided, wherein the lens body has a wall of low thickness, wherein the means for the field generation comprise a source of electromagnetic radiation, whose emitted beam is directed onto the outer side of the wall of the lens body, wherein the thickness of the wall and the quality of the electromagnetic radiation is chosen such that the radiation generates free electrons that emerge from the wall and accumulate on the exit side of the wall in an electron cloud.

Abstract: Impurity ions are implanted into a semiconductor wafer of which a capacitor insulting film is formed on a principal face. In this impurity ion implantation step, the impurity ions are implanted into the semiconductor wafer in the form of a pulsed beam that repeats ON-OFF operation intermittently.

Abstract: An ion gun 11 supplies an Ar gas into a main body 111 from a gas inlet 114, causes DC hot cathode discharge between a filament 113 and an anode 112 to generate Ar plasma. Next, a voltage gradient is applied to separated accelerator grids 116a, 116b having a bi-separated configuration in an ion ejecting direction. The each potential of the separated accelerator grids 116a, 116b is independently controlled by independently setting accelerator control switches 121a, 121b on or off to change the potential of that of the separated accelerator grids 116a, 116b which corresponds to an ion beam to be disabled.

Abstract: The present invention provides a standard reference component for calibration for performing magnification calibration used in the scanning electron microscope with high precision, and provides a scanning electron microscope technique using it.

Abstract: Provided are an ion implanter for compensating for a wafer cut angle and an ion implantation method using the same. The ion implanter may include an orienter for rotating a wafer mounted on an alignment stage thereof to align a notch of the wafer and a wafer stage for mounting thereon the wafer whose notch has been aligned. The ion implanter may further include an ion implantation angle adjustment unit for adjusting an angle of the wafer stage, a cut angle measurement unit for measuring the wafer cut angle while the wafer is mounted and rotated on the alignment stage, and a controller for controlling the ion implantation angle adjustment unit to compensate for the measured wafer cut angle.

Abstract: An electron optical component used to improve the spatial resolution in magnetic projection electron lenses or other electron optical devices by filtering the cyclotron orbit radii of electron trajectories in the lens magnetic field.

Abstract: A charged particle beam pattern writing apparatus includes an input part for inputting a predetermined command, a check part for checking a state of a predetermined function used for pattern writing using a charged particle beam, based on the predetermined command, and an output part for outputting the state of the predetermined function which has been checked.

Abstract: In a particle-beam projection processing apparatus a target (41) is irradiated by means of a beam (pb) of energetic electrically charged particles, using a projection system (103) to image a pattern presented in a pattern definition means (102) onto the target (41) held at position by means of a target stage; no elements—other than the target itself—obstruct the path of the beam after the optical elements of the projection system. In order to reduce contaminations from the target space into the projection system, a protective diaphragm (15) is provided between the projection system and the target stage, having a central aperture surrounding the path of the patterned beam, wherein at least the portions of the diaphragm defining the central aperture are located within a field-free space after the projection system (103).

Abstract: A writing error diagnosis method for a charged beam photolithography apparatus and a charged beam photolithography apparatus which can specify an error cause within a short period of time in occurrence of a pattern writing error are provided. The writing error diagnosis method for a charged beam photolithography apparatus is a writing error diagnosis method for a charged beam photolithography apparatus which irradiates a charged beam on a target object to write a desired pattern. Processing result data of a pattern writing circuit at a position where a pattern writing error occurs is collected after the pattern writing error occurs, and the collected processing result data of the pattern writing circuit is compared with correct data. The charged beam photolithography apparatus has means which realizes the diagnosis method.

Abstract: An electric field lens includes an entrance electrode, an intermediate electrode, and an exit electrode that are arranged in a traveling direction of ion beams. The intermediate electrode is maintained in a positive potential, and the entrance electrode and the exit electrode are maintained in a ground potential. In addition, the electric field lens includes a first control electrode and a second control electrode that are disposed between the entrance electrode and the intermediate electrode and between the intermediate electrode and the exit electrode, respectively and maintained in a negative potential.

Abstract: The present invention provides a charged particle beam apparatus capable of preventing the charging-up of the specimen without using a large-scale facility. A scanning electron microscope 100 illuminates a specimen 21 with a charged particle beam via a charged particle optical system arranged in a column. According to the present invention, the scanning electron microscope 100 has a charge preventive member 110 disposed between the objective lens 14 and the specimen 21. The charge preventive member 110 has an electrically conductive portion and an opening 113 to transmit the charged particle beam. The charge preventive member 110 is formed so as to partly cover the charged particle optical system when viewed from the charged particle beam irradiation spot on the specimen. In addition, the charge preventive member 110 has gas inflow paths 114 and 115 formed therein. These gas inflow paths have gas injection outlets 116 formed to inject gas toward the charged particle beam irradiation spot on the specimen.

Abstract: The invention provides a charged particle beam device and a method of operation thereof. An emitter (2) emits a primary charged particle beam (12). Depending on the action of a deflection system, which comprises at least three deflection stages (14), it can be switched between at least two detection units (16, 44). Further, beam shaping means (15; 41) is provided and a lens for focusing at the primary charged particle beam on a specimen.

Abstract: A particle therapy gantry for delivering a particle beam to a patient includes a beam tube having a curvature defining a particle beam path and a plurality of fixed field magnets sequentially arranged along the beam tube for guiding the particle beam along the particle path. In a method for delivering a particle beam to a patient through a gantry, a particle beam is guided by a plurality of fixed field magnets sequentially arranged along a beam tube of the gantry and the beam is alternately focused and defocused with alternately arranged combined function focusing and defocusing fixed field magnets.

Abstract: A system, method, and apparatus for mitigating contamination associated with ion implantation are provided. An ion source, end station, and mass analyzer positioned between the ion source and the end station are provided, wherein an ion beam is formed from the ion source and selectively travels through the mass analyzer to the end station, based on a position of a beam stop assembly. The beam stop assembly selectively prevents the ion beam from entering and/or exiting the mass analyzer, therein minimizing contamination associated with an unstable ion source during transition periods such as a start-up of the ion implantation system.

Abstract: An ion implantation apparatus includes an ion beam source for generating an ion beam; an implantation energy controller disposed on a path of the ion beam for controlling the ion implantation energy of the ion beam so that an ion beam having a first implantation energy is created for a first period of time and an ion beam having a second implantation energy is created for a second period of time; a beam line for accelerating the ion beam; and an end station for mounting a substrate, into which the ion beam accelerated by the beam line is implanted onto the substrate.

Abstract: There is provided a focused ion beam processing method in which damage to a workpiece is minimized when the surface of the workpiece is irradiated and processed with an ion beam. The method comprises the steps of: generating an acceleration voltage between an ion source and a workpiece; focusing an ion beam emitted from the ion source; and applying the ion beam to a predetermined process position to process the surface of the workpiece. In this process, the energy level of the ion beam produced by the acceleration voltage is set within a range from at least 1 keV to less than 20 keV.

Abstract: Charged particles that are in transit through a deflection system when the beam is repositioned do not received the correct deflection force and are misdirected. By independently applying signals to the multiple stages of a deflection system, the number of misdirected particles during a pixel change is reduced.

Abstract: One embodiment pertains to a method of electron beam lithography. An illumination electron beam is formed, and a dynamic pattern generating device is used to generate an electron-reflective pattern of pixels and to reflect the illumination electron beam from said pattern so as to form a patterned electron beam. The patterned electron beam is projected onto a platter configured to hold and rotate a plurality of target substrates. Said generated pattern of pixels is shifted in correspondence with the rotation of the platter so that the patterned electron beam writes a swath path of pixels over the target substrates. Other features, aspects and embodiments are also disclosed.

Abstract: A process for an intensity-modulated proton therapy of a predetermined volume within an object includes discretising the predetermined volume into a number of iso-energy layers each corresponding to a determined energy of the proton beam. A final target dose distribution is determined for each iso-energy layer. The final target dose distribution or at least a predetermined part of this final target dose distribution is applied by parallel beam scanning by controlling the respective beam sweepers, thereby scanning one iso-energy layer after the other using an intensity-modulated proton beam while scanning a predetermined iso-energy layer.

Abstract: A mask provided with an alignment mark is presented. That mask includes at least one relatively high reflectance area(s) for reflecting radiation of an alignment beam of radiation, and relatively low reflectance areas for reflecting less radiation of the alignment beam, wherein the high reflectance area(s) is (are) segmented in first and second directions both directions being substantially perpendicular with respect to each other so that the high reflectance areas include predominantly rectangular segments.

Abstract: The present invention is related to a D/A conversion device, it is provided with a first D/A conversion circuit which receives input of digital data composed of plural bits and outputs a corresponding electric output signal, and a second D/A conversion circuit which receives input of a correction code for the digital data and which outputs a corresponding electric correction signal, wherein the first and second D/A conversion circuits are connected to each other at their respective output terminals so that the electric output signal is corrected by the electric correction signal. The D/A conversion device comprises: storing means 105 for storing correction codes each for one bit of the digital data, the correction codes being determined in correlation with the first D/A conversion circuit 11; and calculating means 107 for performing serial entry and addition of the correction codes each for one bit of the digital data, and outputting a correction code for all bits of the digital data.

Abstract: An ion implantation apparatus comprises an ion beam source for generating an initial ion beam, a bundled ion beam generator adapted to change the initial ion beam into a bundled ion beam based on a predetermined frequency to pass the bundled ion beam for a first time while passing the initial ion beam for a second time, a beam line for accelerating the ion beam having passed through the ion beam generator, and an end station for arranging a wafer therein to allow the ion beam accelerated by the beam line to be implanted in the wafer, the end station operating to move the wafer in a direction perpendicular to an ion beam implantation direction, so as to implant the bundled ion beam in a first region of the wafer and the initial ion beam in a second region of the wafer.

Abstract: A device for accelerating ions between a potential towards a central point in space is disclosed. The device can be used to accelerate ions along a collision path with other accelerated ions or other present particles resulting in a nuclear fusion reaction. The device improves upon the prior art by using a plasma as one of the electrodes forming the potential.

Abstract: An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

Abstract: A system and method for mitigating contamination in an ion implantation system is provided. The system comprises an ion source, a power supply operable to supply power to a filament and mirror electrode of the ion source, a workpiece handling system, and a controller, wherein the ion source is selectively tunable via the controller to provide rapid control of a formation of an ion beam. The controller is operable to selectively rapidly control power to the ion source, therein modulating a power of the ion beam between an implantation power and a minimal power in less than approximately 20 microseconds based, at least in part, to a signal associated with a workpiece position. Control of the ion source therefore mitigates particle contamination in the ion implantation system by minimizing an amount of time at which the ion beam is at the implantation current.

Abstract: A system, method, and apparatus for mitigating contamination during ion implantation are provided. An ion source, end station, and mass analyzer positioned between the ion source and the end station are provided, wherein an ion beam is formed from the ion source and travels through the mass analyzer to the end station. An ion beam dump assembly comprising a particle collector, particle attractor, and shield are associated with the mass analyzer, wherein an electrical potential of the particle attractor is operable to attract and constrain contamination particles within the particle collector, and wherein the shield is operable to shield the electrical potential of the particle attractor from an electrical potential of an ion beam within the mass analyzer.

Abstract: A method includes generating an ion beam having ions at a first charge state, accelerating the ions at the first charge state to a final energy, altering the first charge state to a second charge state for some of said ions, the second charge state less than the first charge state, providing an ion beam having ions at the second charge state and parasitic beamlets having ions at a charge state different than the second charge state, directing the ion beam having ions at the second charge state towards a wafer, and directing the parasitic beamlets away from the wafer. An ion implanter having a charge exchange apparatus is also provided.

Abstract: A method includes receiving an input signal representative of a desired two-dimensional non-uniform dose pattern for a front surface of a workpiece, driving the workpiece relative to an ion beam to distribute the ion beam across the front surface of the workpiece, and controlling at least one parameter of an ion implanter when the ion beam is incident on the front surface of the workpiece to directly create the desired two-dimensional non-uniform dose pattern in one pass of the front surface of workpiece relative to the ion beam. The beam may be a scanned beam or a ribbon beam. An ion implanter is also provided.

Abstract: A beam manipulating arrangement for a multi beam application using charged particles comprises a multi-aperture plate having plural apertures traversed by beams of charged particles. A frame portion of the multi-aperture plate is heated to reduce temperature gradients within the multi-aperture plate. Further, a heat emissivity of a surface of the multi-aperture plate may be higher in some regions as compared to other regions in view of also reducing temperature gradients.

Abstract: An ion beam irradiating apparatus has: a beam profile monitor 14 which measures a beam current density distribution in y direction of an ion beam 4 in the vicinity of a target 8; movable shielding plate groups 18a, 18b respectively having plural movable shielding plates 16 which are arranged in the y direction so as to be opposed to each other across an ion beam path on an upstream side of the position of the target, the movable shielding plates being mutually independently movable in x direction; shielding-plate driving devices 22a, 22b which reciprocally drive the movable shielding plates 16 constituting the groups, in the x direction in a mutually independent manner; and a shielding-plate controlling device 24 which, on the basis of measurement information obtained by the monitor 14, controls the shielding-plate driving devices 22a, 22b to relatively increase an amount of blocking the ion beam 4 by the opposed movable shielding plates 16 which correspond to a position where a measured y-direction beam curr

Abstract: The present invention has a subject to provide an apparatus that optimizes scanning in accordance with circumstances or purposes, reduces distortion of images, and improves throughput, image quality, and defect detection rate by controlling deflection of a charged particle beam in a stage tracking system.

Abstract: A scanning electron microscope includes an electron gun to generate an electron beam, and an electron optical system directing the electron beam to a specimen. The electron optical system includes an objective lens that converges the electron beam to a surface of the specimen, an aberration corrector disposed between the electron gun and the objective lens so as to at least compensate for aberration caused by the objective lens, and a tilter which tilts electron beam to be incident into the aberration corrector. The aberration corrector further compensates for aberration caused by the tilter.

Abstract: Techniques for reducing contamination during ion implantation is disclosed. In one particular exemplary embodiment, the techniques may be realized by an apparatus for reducing contamination during ion implantation. The apparatus may comprise a platen to hold a workpiece for ion implantation by an ion beam. The apparatus may also comprise a mask, located in front of the platen, to block the ion beam and at least a portion of contamination ions from reaching a first portion of the workpiece during ion implantation of a second portion of the workpiece. The apparatus may further comprise a control mechanism, coupled to the platen, to reposition the workpiece to expose the first portion of the workpiece for ion implantation.

Abstract: A charged particle beam processing apparatus includes a sample chamber to process a substrate including side faces by a charged particle beam, a movable stage in the sample chamber, the stage including a place on which the substrate is to be mounted, a height and position acquiring unit to acquire a height of the substrate on the stage by irradiating a laser beam onto the substrate on the stage and using the laser beam reflected from the substrate and to acquire positions of at least two adjacent side faces among the side faces based on the acquired height, and a calculating unit to calculate a position of center of gravity of the substrate on the stage and a rotation angle as to a rotary axis vertical to the place on which the substrate is to be mounted based on the positions of the at least two adjacent side faces.

Abstract: Techniques for low-temperature ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a wafer support mechanism to hold a wafer during ion implantation and to facilitate movement of the wafer in at least one dimension. The apparatus may also comprise a cooling mechanism coupled to the wafer support mechanism. The cooling mechanism may comprise a refrigeration unit, a closed loop of rigid pipes to circulate at least one coolant from the refrigeration unit to the wafer support mechanism, and one or more rotary bearings to couple the rigid pipes to accommodate the movement of the wafer in the at least one dimension.

Abstract: A device for deflecting a beam of electrically charged particles onto a curved particle path is provided. The device includes at least one beam guidance magnet having a coil system which has at least one coil that is curved along the particle path for the purpose of deflecting the beam onto a curved particle path, and at least one scanner magnet for variably deflecting the beam in a y,z plane at right angles to the particle path, characterized in that the device has at least one correction system which is embodied to influence the particle path in a regulated or controlled manner with the aid of electric and/or magnetic fields as a function of the position of the beam in the y,z plane. The invention also relates to a corresponding method for deflecting a beam of electrically charged particles onto a curved particle path.

Abstract: The present embodiments relate to a gantry for the beam guidance of a particle beam with at least one beam guidance element. A carrier device is rotatably mounted in such a way that the particle beam can be directed by a rotation of the carrier device with the beam guidance element from various angles on to an object to be irradiated. At least one moveable actuating element may adjust a spatial position of the beam guidance element.

Abstract: A charged-particle beam instrument is offered which can cancel out deflection aberrations arising from a first deflector or oblique incidence on the surface of a workpiece without (i) increasing the electrode length, (ii) reducing the inside diameter of the electrode, or (iii) increasing the deflection voltage too much. The instrument has an electron source for producing an electron beam, a demagnifying lens for condensing the beam, an objective lens for focusing the condensed beam onto the surface of the workpiece, the first deflector located behind the demagnifying lens, and a second deflector located ahead of the demagnifying lens. The first deflector determines the beam position on the surface of the workpiece. The second deflector cancels out deflection aberrations arising from the first deflector.

Abstract: Apparatus and method for trapping uncharged multi-pole particles comprises a bound cavity for receiving the particles, and a multiplicity of electrodes coupled to the cavity for producing an electric field in the cavity. In a preferred embodiment, the electrodes are configured to produce in the electric field potential both a multi-pole (e.g., dipole) component that aligns the particles predominantly along an axis of the cavity and a higher order multi-pole (e.g., hexapole) component that forms a trapping region along the axis. In one embodiment, the electrodes and/or the particles are cooled to a cryogenic temperature.

Abstract: There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current.

Abstract: An electron beam apparatus comprises a TDI sensor 64 and a feed-through device 50. The feed-through device has a socket contact 54 for interconnecting a pin 52 attached to a flanged 51 for separating different environments and the other pin 53 making a pair with the pin 52, in which the pin 52, the other pin 53 and the socket contact 54 together construct a connecting block, and the socket contact 54 has an elastic member 61. Accordingly, even if a large number of connecting blocks are provided, the connecting force may be kept to such a low level as to prevent the breakage in the sensor. The pin 53 is connected with the TDI sensor 64, in which a pixel array has been adaptively configured based on the optical characteristic of an image projecting optical system. That sensor has a number of integration stages that can reduce the field of view of the image projecting optical system to as small as possible so that a maximal acceptable distortion within the field of view may be set larger.

Abstract: The invention relates to a method for determining lens errors in a Scanning Electron Microscope, more specifically to a sample that enables such lens errors to be determined. The invention describes, for example, the use of cubic MgO crystals which are relatively easy to produce as so-called ‘self-assembling’ crystals on a silicon wafer. Such crystals have almost ideal angles and edges. Even in the presence of lens errors this may give a clear impression of the situation if no lens errors are present. This enables a good reconstruction to be made of the cross-section of the beam in different under- and over-focus planes. The lens errors can then be determined on the basis of this reconstruction, whereupon they can be corrected by means of a corrector.

Abstract: An ion beam blocking component suitable for blocking an ion beam generated by an ion source of an ion implanter is provided. The blocking component includes a front plate, a back plate, and a plurality of side plates. The front plate has at least one opening. The back plate is behind the front plate, and has a plurality of grooves formed on one surface thereof facing the front plate. The side plates are connected between the front plate and the back plate, and a receiving space is formed between these plates.

Abstract: To provide an ion implantation device which suppresses diffusion of an ion beam, can finely control a scanning waveform and can obtain a large scanning angle of about 10°. In the ion implantation device, first, second and third chambers 12A, 14A and 16A are arranged in predetermined places on a beam line, first and second gaps 20A and 22A intervene between the first chamber 12A and the second chamber 14A and between the second chamber 14A and the third chamber 16A, the second chamber 14A is electrically insulated from the first and third chambers 12A and 16A via first and second electrode pairs 26A and 28A attached to the first and second gaps 20A and 22A, respectively, the first and second electrode pairs 26A and 28A obliquely cross a standard axis J of the ion beam at a predetermined angle in opposite directions, and the second chamber 14 is connected to a scanning power source 40A which applies an electric potential having desired scanning waveform.

Abstract: The present invention provides a charged particle beam energy width reduction system. The system comprises a first element acting in a focusing and dispersive manner in an x-z-plane; a second element acting in a focusing and dispersive manner in the x-z-plane; a charged particle selection element positioned between the first and the second element acting in a focusing and dispersive manner; and a focusing element positioned between the first and the second element acting in a focusing and dispersive manner.

Abstract: A scanning charged particle microscope which facilitates adjustment, has a deep focal depth, and is provided with an aberration correction means. The state of aberration correction is judged from a SEM image by using a stop having plural openings and the judgment result is fed back to the adjustment of the aberration correction means. A stop of a nearly orbicular zone shape is used in combination with the aberration correction means.

Abstract: A charged particle beam emitting device includes at least two charged particle beam guns, each of the at least two charged particle beam guns having a separate charged particle emitter with an emitting surface for emitting a respective charged particle beam. The charged particle beam emitting device further includes an aperture element comprising at least one aperture opening and a deflector unit. The deflector unit is adapted for alternatively directing the charged particle beams of the at least two charged particle beam guns on the at least one aperture opening so that, at the same time, one of the at least two charged particle beams is directed on the aperture opening while the respective other charged particle beam of the at least two charged particle beams is deflected from the aperture opening by the deflector unit. At the same time, only one of the two charged particle beam guns is used so that the temporarily unused charged particle beam gun can be subjected to a cleaning procedure.

Abstract: A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.

Abstract: A charge control electrode emitting photoelectrons is disposed just above a wafer (sample) in parallel thereto, and the electrode has a through hole so that ultraviolet light can be irradiated to the wafer through the charge control electrode. Specifically, a metal plate which is formed in mesh or includes one or plural holes is used as the charge control electrode. By disposing the charge control electrode just above the sample in parallel thereto, when negative voltage is applied to the electrode, electric field approximately perpendicular to the wafer is generated. Therefore, photoelectrons are efficiently absorbed in the wafer. Also, by using the charge control electrode having approximately the same size as that of the wafer, charges on a whole surface of the wafer can be removed collectively and uniformly. Therefore, time required for the process can be reduced.