Abstract: A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.

Abstract: A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.

Abstract: A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.

Abstract: An electron beam (4) to be irradiated onto a sample (10) is two-dimensionally scanned by a scanning coil (9), and secondary electrons generated from the sample (10) by the scanning are detected by a secondary electron detector (13). A deflection coil (15) for image shifting is used for electrically deflecting the primary electron beam to shift a field of view for image shift in an arbitrary direction by an arbitrary amount. By the image shift, the primary electron beam (4) to be irradiated onto the sample is energy dispersed to degrade the resolution. However, an E×B field producer (30) for dispersion control gives the primary electron beam energy dispersion in the opposite direction and having the equal magnitude. Therefore, the energy dispersion produced in the primary electron beam by the image shift is automatically corrected.

Abstract: A computer sets a process area based on an image obtained by observing a mask, and determines the positions of representative points that form a contour of the process area for each pixel with sub-pixel accuracy that is better than a pixel, the position of each of the representative points being able to be set to either the center position of the pixel or a position displaced therefrom. Furthermore, for the pixels within the process area, the computer sets the center positions of the pixels as the representative points and corrects the positions of the representative points of the pixels within the process area on a sub-pixel basis such that nonuniformity between the representative points is reduced.

Abstract: A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.

Abstract: An apparatus for producing negative ions including an emitter coated with an ionic liquid room-temperature molten salt, an electrode positioned downstream relative to the emitter, a power supply that applies a voltage to the emitter with respect to the electrode. The power supply is sufficient to generate a stable high brightness beam of negative ions having minimal chromatic and spherical aberrations in the beam. An electrostatic lens and deflector is used to focus and direct the beam to a target.

Abstract: This apparatus for manufacturing semiconductor substrates has support disks and holding units holding semiconductor substrates on the support disks. The holding unit has a stopper which is formed of a conductive material and holds the brim of the semiconductor substrate, a stopper holder which supports the stopper at the outer circumferential portion thereof, a retaining member which retains the stopper to the support disk, and a heating unit which heats the stopper.

Abstract: A writing apparatus including a selector unit responsive to receipt of input data of a pattern to be written by shots of irradiation of an electron beam, configured to select a current density of the electron beam being shot and a maximal shot size thereof based on the input data of the pattern to be written; and a writing unit configured to create an electron beam with the current density selected by said selector unit, shape the created electron beam into a shot size less than or equal to said maximal shot size in units of the shots, and shoot the shaped electron beam onto a workpiece to thereby write said pattern.

Abstract: After a scan area for observing or processing a mask is set, a computer of the charged particle beam apparatus determines a plurality of scan lines in the scan area by the following steps of: setting a scan line along the outer circumference of the scan area; determining a scan line inside and along the thus set scan line; determining a scan line inside and along the thus determined scan line; and repeating the step of determining a scan line. After the scan lines are determined, the computer controls a scanning circuit to apply an ion beam to the scan lines while thinning out scan lines and/or pixels.

Abstract: The present invention disclosure relates to the use of a silicon substrate with a thin film membrane as a transparent substrate for the imaging of biological- and material-related specimens using a microscope such as a transmission electron microscope (TEM). More specifically, the present invention relates to an improved substrate design that incorporates the fabrication of a circular shape that allows easier insertion into traditional specimen holders used in TEMs. In addition to an improved shape, the present invention incorporates microscopic surface texture on the gripping surface that assists in handling. The invention also encompasses surface modification techniques for enhanced biocompatibility of the thin film membrane for biomedical applications.

Abstract: This invention relates to a method of measuring a property of an ion beam, for example an ion beam current profile or the emittance of an ion beam. A Faraday array comprising an array of ion beam current sensors is employed. The array can provide an ion beam current profile at the plane of the array. The Faraday array is also used in conjunction with an occluding element that may be moved through the ion beam upstream of the Faraday array, there obscuring varying portions of the ion beam from the Faraday array. Suitable manipulation of the signals from the Faraday allows the ion beam current profile to be determined for the plane of the occluding element, and also for the emittance of the ion beam at the plane of the occluding element to be determined.

Abstract: An ion implantation system utilizing detected ion induced luminescence as feedback control that comprises, a wafer, a spectrometer, a photodetector, an ion source generator, wherein the ion source generator is configured to implant the wafer with ions, and the photodetector is configured to detect ion induced luminescence both on and off the wafer.

Abstract: A beam guidance magnet for deflecting a beam of electrically charged particles along a curved particle path is provided. The beam guidance magnet includes a coil system that does not include a ferromagnetic material affecting the beam guidance and has curved coils stretched out along the particle path, the coils being arranged in pairs in mirror symmetry to the beam guidance plane. The coil system includes two primary coils and two substantially flat secondary coils. The two primary coils include primary coil sides and primary coil end parts bent upward relative to the beam guidance plane. The two substantially flat secondary coils are disposed between the primary coil end parts. Supplementary coils are disposed in the field range of the respective curved secondary coil end parts.

Abstract: The invention relates to a focusing and positioning ancillary device for a particle-optical scanning microscope, a particle-optical scanning microscope including a corresponding positioning aid, and a method for focusing and positioning an object in a particle-optical scanning microscope. The focusing and positioning ancillary device includes an illuminating device, a camera, a display and a control unit. The illuminating device produces a collimated or focused light beam at an angle to the particle-optical beam axis which intersects the particle-optical beam axis at a predetermined position. The camera is sensitive to the wavelength of the light beam and records an image of the object, which is positioned on the object table, at a second angle to the particle-optical beam axis. The control unit produces an image captured by the camera on the display together with a marking which indicates the position of the particle-optical beam axis in the image.

Abstract: A charged particle therapy system is disclosed in which a hard switch for making a beam request of the accelerator side is installed in an irradiation room so that the accelerator side can start a desired beam irradiation preparation after depressing the hard switch. This arrangement allows the accelerator allocated time to be reduced, thereby improving the usage efficiency of the facilities by increasing the throughput with respect to patients.

Abstract: A phase-shifting element for shifting a phase of at least a portion of a particle beam is described, as well as a particle beam device having a phase-shifting element of this type. In the phase-shifting element and the particle beam device having a phase-shifting element, components shadowing the particle beam are avoided, so that proper information content is achieved and in which the phase contrast is essentially spatial frequency-independent. The phase-shifting element may have at least one means for generating a non-homogeneous or anisotropic potential. The particle beam device according to the system described herein may be provided with the phase-shifting element.

Abstract: An object of the invention is to reduce the beam drift in which the orbit of the charged particle beam is deflected by a potential gradient generated by a nonuniform sample surface potential on a charged-particle-beam irradiation area surface, the nonuniform sample surface potential being generated by electrification made when observing an insulating-substance sample using a charged particle beam. Energy of the charged particle beam to be irradiated onto the sample is set so that generation efficiency of secondary electrons generated from the sample becomes equal to 1 or more. A flat-plate electrode (26) is located in such a manner as to be directly opposed to the sample. Here, the flat-plate electrode is an electrode to which a voltage can be applied independently, and which is equipped with a hole through which a primary charged particle beam can pass. Furthermore, a voltage can be applied independently to a sample stage (12) on which the sample is mounted.

Abstract: A ridge filter or a range modulation wheel (RMW) is formed to have a shape corresponding to an affected part in the patient body. A plurality of spread-out Bragg peaks with the same dose or different doses are formed in the affected part by executing beam-on/off control of the RMW, beam current control with rotation of the RMW, intensity modulation control, or scanning irradiation. As an alternative, a spread-out Bragg peak containing a portion with a different dose is formed. A treatment time is cut.

Abstract: A system for treating target cells with both positive and negative ions comprises a bi-polar beam delivery system configured to create and deliver both positive ion beams and negative ion beams. The bi-polar beam delivery system comprises a bi-polar accelerator configured to accelerate positive and negative ions in the same direction making such a bi-polar beam delivery system practical.

Abstract: To establish a technique that enables sorting of the elevation and azimuth angle in the direction of emitting secondary electrons and obtaining images with emphasized contrast, in order to perform the review and analysis of shallow asperities and microscopic foreign particles in a wafer inspection during the manufacture of semiconductor devices, an electromagnetic overlapping objective lens is used to achieve high resolution, an electron beam is narrowly focused using the objective lens, an electric field for accelerating secondary electrons in the vicinity of a wafer in order to suppress the dependence on secondary electron energy of the rotation of secondary electrons generated by irradiation of the electron beam, a ring-shaped detector plate is disposed between an electron source and the objective lens, and the low angle components of the elevation angle of the secondary electrons, as viewed from the place of generation, and the high angle components are separated and also the azimuth components are separa

Abstract: One embodiment relates to an electronically-variable electrostatic immersion lens in an electron beam apparatus. The electrostatic immersion lens includes a top electrode configured with a first voltage applied thereto, an upper bottom electrode configured with a second voltage applied thereto, and a lower bottom electrode configured with a third voltage applied thereto. The third voltage is controlled separately from the second voltage. Other embodiments are also disclosed.

Abstract: A charged particle beam writing apparatus includes an unit configured to irradiate a beam, a deflector configured to deflect the beam, a stage, on which a target is placed, configured to perform moving continuously, an lens configured to focus the beam onto the target, an unit configured to calculate a correction amount for correcting positional displacement of the beam on a surface of the target resulting from a first magnetic field caused by the lens and a second magnetic field caused by an eddy current generated by the first magnetic field and the moving of the stage, an unit configured to calculate a correction position where the positional displacement on the surface of the target has been corrected using the correction amount, and an unit configured to control the deflector so that the beam may be deflected onto the correction position.

Abstract: The purpose of the invention is to provide an improved electron beam apparatus with improvements in throughput, accuracy, etc. One of the characterizing features of the electron beam apparatus of the present invention is that it has a plurality of optical systems, each of which comprises a primary electron optical system for scanning and irradiating a sample with a plurality of primary electron beams; a detector device for detecting a plurality of secondary beams emitted by irradiating the sample with the primary electron beams; and a secondary electron optical system for guiding the secondary electron beams from the sample to the detector device; all configured so that the plurality of optical systems scan different regions of the sample with their primary electron beams, and detect the respective secondary electron beams emitted from each of the respective regions. This is what makes higher throughput possible.

Abstract: A charged particle optical system for testing, imaging or inspecting substrates comprises: a charged particle optical assembly configured to produce a line of charged particle beams equally spaced along a main scan axis, each beam being deflectable through a large angle along the main scan axis; and linear detector optics aligned along the main scan axis. The detector optics includes a linear secondary electron detector, a field free tube, voltage contrast plates and a linear backscattered electron detector. The large beam deflection is achieved using an electrostatic deflector for which the exit aperture is larger than the entrance aperture. One embodiment of the deflector includes: two parallel plates with chamfered inner surfaces disposed perpendicularly to the main scan axis; and a multiplicity of electrodes positioned peripherally in the gap between the plates, the electrodes being configured to maintain a uniform electric field transverse to the main scan axis.

Abstract: A tandem analysis system is provided for ionizing a substance, performing mass spectrometric analysis of various ion types generated, selecting and dissociating an ion type, the ion type having a specific mass-to-charge ratio, and thereby, repeating mass spectrometric analysis measurement on the ion of the ion type over n-th stages. A processing judges control content for the analysis next to MSn (the n-th stage mass spectrometric analysis) within a predetermined time, based on ion intensity being represented by an ion peak with respect to the mass-to-charge ratio of each ion in the MSn result. An ion detection unit judges isotope-peak from the measured ionized data. Assuming that the MS1 count number of a parent-ion peptide measured during a certain constant time-interval is I, a data processing unit makes the MS2 integration number-of-times or analysis time of the peptide proportional to 1/I.

Abstract: The present invention relates to a beam optical component including a charged particle lens for focusing a charged particle beam, the charged particle lens comprising a first element having a first opening for focusing the charged particle beam; a second element having a second opening for focusing the charged particle beam and first driving means connected with at least one of the first element and the second element for aligning the first opening with respect to the second opening. With the first driving means, the first opening and the second opening can be aligned with respect to each other during beam operation to provide a superior alignment of the beam optical component for a better beam focusing. The present invention also relates to a charged particle beam device that uses said beam optical component for focusing the charged particle beam, and a method to align first opening and second opening with respect to each other.

Abstract: An electron beam column comprises a thermal field emission electron source to generate an electron beam, an electron beam blanker, a beam shaping module, and electron beam optics comprising a plurality of electron beam lenses. In one version, the optical parameters of the electron beam blanker, beam shaping module, and electron beam optics are set to achieve an acceptance semi-angle ? of from about ¼ to about 3 mrads, where the acceptance semi-angle ? is half the angle subtended by the electron beam at the writing plane. The beam-shaping module can also operate as a single lens using upper and lower projection lenses. A multifunction module for an electron beam column is also described.

Abstract: A charged particle beam writing apparatus includes an irradiation part configured to irradiate a charged particle beam; a first shaping aperture member having passing areas, that the charged particle beam passes through, on both sides of an area blocking the charged particle beam; a deflection part configured to deflect the charged particle beam that has passed through the first shaping aperture member; a second shaping aperture member having passing areas, that the charged particle beam passes through, on both sides of an area blocking the deflected charged particle beam; and a stage on which a target workpiece irradiated with the charged particle beam that has passed through the second shaping aperture member is placed.

Abstract: An image monitor system monitors characteristics of an ion beam employed in ion implantation. The monitored characteristics can include particle count, particle information, beam current intensity, beam shape, and the like. The system includes one or more image sensors that capture frames or images along a beam path of an ion beam. An image analyzer analyzes the captured frames to obtain measured characteristics. A controller determines adjustments or corrections according to the measured characteristics and desired beam characteristics.

Abstract: An electron microscope has a spherical aberration correction system having transfer optics inserted between a spherical aberration corrector and the objective lens. The transfer optics consists of first and second lenses each of which is made of a magnetic lens. Electrons passing across a point located at distance r0 from the optical axis are made to enter the first lens within the multipole element. Electrons are made to enter the second lens at distance r1 of the incident point to the objective lens from the optical axis. The ratio M(=r1/r0) is greater than 1.

Abstract: A system, apparatus, and method for determining position and two angles of incidence of an ion beam to a surface of a workpiece is provided. A measurement apparatus having an elongate first and second sensor is coupled to a translation mechanism, wherein the first sensor extends in a first direction perpendicular to the translation, and wherein the second sensor extends at an oblique angle to the first sensor. The first and second elongate sensors sense one or more characteristics of the ion beam as the first and second sensors pass through the ion beam at a respective first time and a second time, and a controller is operable to determine a position and first and second angle of incidence of the ion beam, based, at least in part, on the one or more characteristics of the ion beam sensed by the first sensor and second sensor at the first and second times.

Abstract: A system and method of determining shape and position corrections of a beam such as a particle or other beam used in a system such as a particle beam lithography. The method of providing corrected deflector voltages may include determining a voltage step value by subtracting a previous deflector voltage value with a current deflector voltage value; determining a plurality of correction values using the voltage step value and an exposure time for the current deflector voltage value; selecting a current voltage correction value from the plurality of correction values using the current deflector voltage value; and calculating a corrected deflector voltage value by adding the current voltage correction value to the current deflector voltage value.

Abstract: A charged particle beam apparatus produces little reduction in resolution when the beam is inclined with respect to a sample. The trajectory of a primary beam 4 is deflected by a deflector or changed by a movable aperture such that the beam is incident on a plurality of lenses 6 and 7 off the axes thereof. A means is provided to control the off-axis trajectory of the beam such than an aberration produced by the objective lens 7 when the beam is inclined can be canceled by an aberration produced by the other lens 6.

Abstract: A charged-particle beam emitting device which includes the following configuration devices so that a lowering in the image resolution will be suppressed even if a primary beam is tilted relative to a sample: A device for causing orbit of the primary beam to pass through off-axes of a plurality of lenses, and controlling off-axis orbit of the primary beam. This device allows the aberration which occurs in the objective lens at the time of beam tilt to be cancelled out by the aberration which occurs in the other lens. Also, there is provided a device for simultaneously modulating excitations of the plurality of lenses including the objective lens.

Abstract: A micro column electron beam apparatus having a reduced number of interconnections is provided. The micro column electron beam apparatus includes: a low temperature co-fired ceramic (LTCC) substrate; a plurality of deflector electrodes attached to a predetermined top portion of the LTCC substrate; a pad electrode placed at a top edge of the LTCC substrate and transmitting an external signal to the deflector electrodes; and a connection unit placed in the LTCC substrate and electrically connecting the deflector electrode and the pad electrode.

Abstract: The invention is intended to confirm whether the SOBP (spread-out Bragg peak) width is a desired value in real time during beam irradiation, and to improve safety in treatment. Ion beam delivery equipment comprises a beam generator including a synchrotron, an RMW (range modulation wheel) device for forming an SOBP width of an ion beam extracted from the beam generator, a beam delivery nozzle including a reference dose monitor and a main dose monitor which are installed respectively upstream and downstream of the RMW device in the direction of travel of the ion beam, and an SOBP width computing unit for computing the SOBP width of the ion beam, which is formed by the RMW device, based on values detected by both the reference dose monitor and the main dose monitor.

Abstract: In a particle-beam apparatus for irradiating a target, a pattern defined in a pattern definer is projected onto the target through a projection system by a beam of energetic electrically charged particles of, largely, a species of a nominal mass having a nominal kinetic energy. To generate the beam, a particle source, a velocity-dependent deflector and an illumination optics system are provided. The velocity-dependent deflector includes a transversal dipole electrical field and/or a transversal dipole magnetic field, which act upon the particles so as to causing a deviation of the path of the particles with regard to the paths of the nominal species which is dependent on the velocity of the particles. A delimiter is provided as a component of the pattern definer or, preferably, the projection system, serving to remove particles whose paths are deviating from the nominal path.

Abstract: One embodiment described relates to a multiple electron beam apparatus. Multiple columns are arranged in a row configured to generate multiple electron beams. A mechanism is included for translating a substrate so as to be impinged upon by the multiple electron beams. A direction of the substrate translation and a direction of the row of columns are at a skew angle.

Abstract: The invention relates to an apparatus for generating a plurality of charged particle beamlets, comprising a charged particle source for generating a diverging charged particle beam, a converging means for refracting said diverging charged particle beam and a lens array comprising a plurality of lenses, wherein said lens array is located between said charged particle source and said converging means. In this way, it is possible to reduce aberrations of the converging means.

Abstract: One embodiment pertains to an apparatus which impinges a focused electron beam onto a substrate. The apparatus includes an irradiation source and at least two non-axisymmetric lenses. The irradiation source is configured to originate electrons for an incident electron beam. The non-axisymmetric lenses are positioned after the irradiation source and are configured to focus the beam in a first linear dimension so as to produce a linear crossover of the beam. The non-axisymmetric lenses are further configured to subsequently focus the beam in a second linear dimension, which is substantially perpendicular to the first linear dimension. Finally, the non-axisymmetric lenses are also configured to produce a focused image at an image plane. Other embodiments are also disclosed.

Abstract: A device for accelerating ions between a potential towards a central point in space is disclosed. The device can be used to accelerate ions along a collision path with other accelerated ions or other present particles resulting in a nuclear fusion reaction. The device improves upon the prior art by using a plasma as one of the electrodes forming the potential.

Abstract: A system for implantation dosage control. A first interface receives scan position information. A second interface receives beam current information specifying a first beam current value between scans and a plurality of second beam current values during one of the scans. A controller, determines a tolerance range according to the first beam current value, determines whether the second beam current values exceeds the tolerance range, and calculates number of the second beam current values exceeding the tolerance range.

Abstract: The present invention provides a method for implanting charged particles in a substrate and a method for manufacturing an integrated circuit. The method for implanting charged particles in a substrate, among other steps, includes projecting a beam of charged particles (320) to a substrate (330), the beam of charged particles (320) having a given beam divergence, and forming a diverged beam of charged particles (360) by subjecting the beam of charged particles (320) to an energy field (350), thereby causing the beam of charged particles (320) to have a larger beam divergence. The method then desires implanting the diverged beam of charged particles (360) into the substrate (330).

Abstract: Quadrupole-octupole aberration corrector for application in a TEM, STEM or SEM. A known corrector for correcting third-order and fifth-order aberrations of the objective is embodied with eight quadrupoles and three octupoles. The corrector according to the invention has at least the same aberration-correcting power, but, according to the invention, is embodied with six quadrupoles and three octupoles. By adding octupoles with a relatively weak excitation to a portion of the quadrupoles, correction of the anisotropic coma of the objective lens is also attained. By embodying all quadrupoles, or a portion thereof, to be electromagnetic, chromatic aberrations can also be corrected for.

Abstract: In a charged particle beam applying apparatus such as an electron beams lithography system, there is a technology that facilitates positional adjustment of a crossover and improves throughput of the apparatus. A front focal plane of a condenser lens is provided with a sharp end face (crossover regulation edge) for regulating the height of the crossover on a beam axis. By using the crossover regulation edge to measure the shape of an electron beam, the shape of the beam on the front focal plane of the condenser lens can be always checked even if the height of the crossover formed by an electron gun or the resistance of a source forming lens is changed.

Abstract: The present invention provides a plurality of permanent magnets to enhance radiation dose delivery of a high energy particle beam. The direction of the magnetic field from the permanent magnets may be changed by moving the permanent magnets.

Abstract: A rotating gantry includes a link frame for supporting a plurality of rollers which rotatably support the rotating gantry, a brake for releasing a braking force applied to at least one of the rollers upon supply of air and applying the braking force to the one roller upon discharge of air, and a solenoid valve for sealing the supplied air in the brake when closed, and discharging the air from the brake when opened. The solenoid valve is supported by a solenoid valve support member mounted to the link frame such that the solenoid valve is positioned just near the brake. The rotating gantry can be more quickly braked and stopped while maintaining high irradiation accuracy.

Abstract: In a pattern definition device for use in a particle-beam exposure apparatus a plurality of blanking openings (910) are arranged within a pattern definition field (bf) composed of a plurality of staggered lines (bl) of blanking openings, each provided with a deflection means controllable by a blanking signal (911); for the lines of blanking openings, according to a partition of the blanking openings of a line into several groups (g4,g5,g6), the deflection means of the blanking openings of each group are fed a common group blanking signal (911), and the group blanking signal of each group of a line is fed to the blanking means and connected to the respective blanking openings independently of the group blanking signals of the other groups of the same line.

Abstract: In a particle-beam projection processing apparatus a target (41) is irradiated by means of a beam (pb) of energetic electrically charged particles, using a projection system (103) to image a pattern presented in a pattern definition means (102) onto the target (41) held at position by means of a target stage; no elements—other than the target itself—obstruct the path of the beam after the optical elements of the projection system. In order to reduce contaminations from the target space into the projection system, a protective diaphragm (15) is provided between the projection system and the target stage, having a central aperture surrounding the path of the patterned beam, wherein at least the portions of the diaphragm defining the central aperture are located within a field-free space after the projection system (103).