Abstract: A substrate processing system includes a chemical liquid preparation unit preparing a chemical liquid to be supplied to a substrate and a processing unit which supplies the chemical liquid, prepared by the chemical liquid preparation unit, to the substrate. The chemical liquid preparation unit supplies an oxygen-containing gas, containing oxygen gas, to a TMAH-containing chemical liquid, containing TMAH (tetramethylammoniumhydroxide),tomaketheoxygen-containing gas dissolve in the TMAH-containing chemical liquid.

Abstract: Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.

Abstract: A polishing composition, comprising a compound having structure I or salts thereof: wherein R1 is selected from the group consisting of —O?Mx+ wherein x is selected from the group consisting of 1, 2, and 3, —O—R3 wherein R3 is selected from the group consisting of alkyl, allyl, and phenyl, —N(R3R4) wherein R4 is selected from the group consisting of —H, alkyl, allyl, and phenyl, and —S—R3, and wherein R2 is selected from the group consisting of —CH2—CO2—CH3, —CO—NH—R5, —CH2—CH(OH)—CH2—OH, —CH2—CH(OH)—CH2—R3, and —CH2-substituted phenyl, wherein R5 is selected from the group consisting of alkyl and substituted phenyl.

Abstract: Provided is a polishing composition characterized by: including at least one of either organic acid or organic salt and including a composition (A) including hydroxyethyl cellulose, ammonia, abrasive grains, and water. The electrical conductivity of the polishing composition is 1.2 to 8 times the electrical conductivity of the composition (A). The polishing composition is mainly used in substrate surface polishing applications.

Abstract: Adherence of contaminant residues or particles is suppressed, corrosion of exposed surfaces is substantially reduced or eliminated during the process of dicing a wafer by sawing. A fluoride-free aqueous composition comprising a dicarboxylic acid and/or salt thereof; a hydroxycarboxylic acid and/or salt thereof or amine group containing acid, a surfactant and deionized water is employed.

Abstract: The present disclosure provides a concentrate for use in chemical mechanical polishing slurries, and a method of diluting that concentrate to a point of use slurry. The concentrate comprises abrasive, complexing agent, and corrosion inhibitor, and the concentrate is diluted with water and oxidizer. These components are present in amounts such that the concentrate can be diluted at very high dilution ratios, without affecting the polishing performance.

Abstract: A chemical mechanical polishing composition is provided, comprising, as initial components: water, an abrasive; a diquaternary substance according to formula (I); a derivative of guanidine according to formula (II); and, optionally, a quaternary ammonium salt. Also, provided is a method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate comprises silicon dioxide; providing the chemical mechanical polishing composition of the present invention; providing a chemical mechanical polishing pad; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate; and dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition has a pH of 2 to 6.

Abstract: An etching agent for a semiconductor substrate, which is capable of etching a titanium (Ti)-based metal film on a semiconductor substrate and an etching method using the etching agent, and relates to a liquid for preparing the etching agent for a semiconductor substrate composed of a solution comprising (A) hydrogen peroxide, (B) a phosphonic acid chelating agent having a hydroxyl group, (C) a basic compound, and (D-1) a copper anticorrosive. An etching method for etching a titanium (Ti)-based metal film on a semiconductor substrate using the etching agent. A solution comprising (B) a phosphonic acid chelating agent having a hydroxyl group, (C) a basic compound, and (D-1) a copper anticorrosive.

Abstract: A composition of an etching agent for aluminum or aluminum alloy and a treatment method thereof are provided. The etching agent does not contain a component not suitable for a wastewater treatment, such as boron and fluorine, and has stable etching performance even when performing an etching treatment continuously. The etching agent has excellent aging resistance providing good etching uniformity and corrosion resistance after etching. This etching agent is an etching agent for aluminum or aluminum alloy, including 50 parts by mass of an aminocarboxylic acid, 5 to 300 parts by mass of at least one selected from a hydroxycarboxylic acid, a dicarboxylic acid, a polycarboxylic acid, and salts thereof, and 10 to 800 parts by mass of at least one selected from a hydroxide, a carbonate, and a bicarbonate of an alkali metal, wherein an aqueous solution of the etching agent has a pH of 8 to 10.

Abstract: The invention relates to a contact release capsule comprising a particle, a chemical payload, and a polymer coating, wherein the particle is impregnated with the chemical payload, and the chemical payload is held inside the particle by the polymer coating until the contact release capsule contacts a surface and a shearing force removes the polymer coating allowing the chemical payload to release outside the particle. The contact release capsule is useful in chemical mechanical planarization slurries. Particularly, the contact release capsule may comprise a glycine impregnated silica nanoparticle coated with a polymer, wherein the contact release capsule is dispersed in an aqueous solution and used in the copper chemical mechanical planarization process. Use of the contact release capsule in a slurry for copper chemical mechanical planarization may significantly improve planarization efficiency, decrease unwanted etching and corrosion, and improve dispersion stability.

Abstract: In etching processing of silicon, in particular anisotropic etching processing of silicon in a manufacturing step of MEMS parts, an etching liquid having a long life of etching liquid and an etching method are provided by suppressing a lowering of an etching rate at the time of warming which is characteristic of a hydroxylamine-containing etching liquid. A silicon etching liquid which is an alkaline aqueous solution containing an alkali metal hydroxide, hydroxylamine and an inorganic carbonate compound and having a pH of 12 or more and which is able to anisotropically dissolve monocrystalline silicon therein, and an etching method of silicon using this etching liquid are provided.

Abstract: A solution for selectively etching copper or a copper alloy from a microelectronic device, wherein the device simultaneously includes copper or a copper alloy and nickel-containing material, the solution being an etching solution for copper or a copper alloy comprising a chelating agent having an acid group in a molecule, hydrogen peroxide, and a surfactant having an oxyethylene chain in a molecule.

Abstract: An aqueous polishing composition comprising (A) abrasive particles and (B) an amphiphilic nonionic surfactant selected from the group consisting of water-soluble or water-dispersible surfactants having (b1) hydrophobic groups selected from the group consisting of branched alkyl groups having 10 to 18 carbon atoms; and (b2) hydrophilic groups selected from the group consisting of polyoxyalkylene groups comprising (b21) oxyethylene monomer units and (b22) substituted oxyalkylene monomer units wherein the substituents are selected from the group consisting of alkyl, cycloalkyl, or aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl and alkyl-cycloalkyl-aryl groups, the said polyoxyalkylene group containing the monomer units (b21) and (b22) in random, alternating, gradient and/or blocklike distribution; a CMP process for substrates having patterned or unpatterned low-k or ultra-low-k dielectric layers making use of the said aqueous polishing composition; and the use of the said aqueous polishing composition for m

Abstract: The invention provides a chemical-mechanical polishing composition comprising alpha alumina, fumed alumina, silica, an oxidizing agent that oxidizes nickel-phosphorous, oxalic acid, optionally, tartaric acid, optionally, a nonionic surfactant, optionally, a biocide, and water. The invention also provides a method of chemically-mechanically polishing a substrate comprising contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.

Abstract: Provided is a polishing slurry composition, including a non-ionic surfactant represented by the following formula (1) R-(OCH2CH2)x—OH ??formula (1) wherein x is an integer from 1 to 50.

Abstract: The invention provides compositions and methods for planarizing or polishing a substrate. The composition comprises an abrasive, iodate ion, a nitrogen-containing compound selected from the group consisting of a nitrogen-containing C4-20 heterocycle and a C1-20 alkylamine, and a liquid carrier comprising water.

Abstract: A method using an associated composition for chemical mechanical planarization of a copper-containing substrate affords high copper removal rates and low dishing values during CMP processing of the copper-containing substrate, including an abrasive, at least three surfactants, preferably non-ionic and preferably three distinct surfactants, preferably in the range of 100 ppm to 2000 ppm per surfactant and an oxidizing agent.

Abstract: Provided is a polishing liquid including cerium oxide particles, an organic acid A, a polymer compound B having a carboxyl acid group or a carboxylate group, and water, wherein the organic acid A has at least one group selected from the group consisting of —COOM group, -Ph-OM group, —SO3M group and —PO3M2 group, pKa of the organic acid A is less than 9, a content of the organic acid A is 0.001 to 1 mass % with respect to the total mass of the polishing liquid, and a content of the polymer compound B is 0.01 to 0.50 mass % with respect to the total mass of the polishing liquid, and pH is in the range of 4.0 to 7.0.

Abstract: Provided is a polishing composition containing abrasive grains, at least one type of alcohol compound selected from the group consisting of aliphatic alcohols with 2 to 6 carbon atoms and glycol ethers with 3 to 10 carbon atoms, at least one type of basic compound selected from the group consisting of quaternary ammonium salts and alkali metal salts, and water. The average primary particle diameter of the abrasive grains is 5 to 50 nm. The content of the alcohol compound in the polishing composition is 0.01 to 1% by mass. The polishing composition is mainly used in an application of polishing a semiconductor substrate surface.

Abstract: A polishing slurry includes an abrasive, a dispersion agent, a polish accelerating agent and an adhesion inhibitor. The adhesion inhibitor includes a benzene compound combined with a carboxyl group. Methods of planarizing an insulating layer using the slurry are also provided.

Abstract: An aqueous polishing composition comprising (A) abrasive ceria particles and (B) amphiphilic nonionic surfactants selected water-soluble and water-dispersible, linear and branched polyoxyalkylene blockcopolymers of the general formula I: R[(B1)m/(B2)nY]p (I), wherein the indices and the variables have the following meaning: m, n, and p integers>1; R hydrogen atom or monovalent or polyvalent organic residue, except C5-C20 alkyl groups; (B1) block of oxyethylene monomer units; (B2) block of substituted oxyalkylene monomer units wherein the substituents are selected from two methyl groups, alkyl groups of more than two carbon atoms and cycloalkyl, aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl and alkyl-cycloalkyl-aryl groups; and Y hydrogen atom or monovalent organic residue, except C5-C20 alkyl groups; with the proviso that when (B) contains more than one block (B1) or (B2) two blocks of the same type are separated by a block of the other type.

Abstract: Disclosed is a polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains at least one of a cationic polymer and a cationic polysaccharide. The present invention can provide a polishing agent which is capable of polishing an insulating film at a high speed with less polishing flaws, and having a high polishing rate ratio of a silicon oxide film and a stopper film, in the CMP technology of flattening insulating film. The present invention can also provide a polishing agent set for storing the polishing agent, and a method for polishing a substrate using this polishing agent.

Abstract: A chemical mechanical polishing composition useful for chemical mechanical polishing of a patterned semiconductor wafer containing a nonferrous metal. The chemical mechanical polishing composition comprises an inhibitor for the nonferrous metal; a copolymer of poly(ethylene glycol)methyl ether (meth)acrylate and 1-vinylimidazole; and water.

Abstract: A polishing composition that can improve polishing property without foaming is provided. A polishing composition includes a pH regulator, a water-soluble polymer compound, and a compound containing an alkylene diamine structure having two nitrogens represented by the following general formula (1), and having at least one block type polyether bonded to the two nitrogens of the alkylene structure, the block type polyether having a bond of an oxyethylene group and an oxypropylene group: where R represents an alkylene group represented by CnH2n, in which n is an integer of 1 or more.

Abstract: The polishing liquid according to the embodiment comprises abrasive grains, an additive and water, wherein the abrasive grains satisfy either or both of the following conditions (a) and (b). (a) Producing absorbance of at least 1.50 for light with a wavelength of 400 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %, and also producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %. (b) Producing absorbance of at least 1.000 for light with a wavelength of 290 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %, and also producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.

Abstract: The invention relates to a chemical-mechanical polishing composition comprising a ceria abrasive, cations of one or more lanthanide metals, one or more nonionic polymers, water, and optionally one or more additives. The invention further relates to a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises one or more of silicon oxide, silicon nitride, and polysilicon.

Abstract: The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, one or more nonionic polymers, optionally one or more phosphonic acids, optionally one or more nitrogen-containing zwitterionic compounds, optionally one or more sulfonic acid copolymers, optionally one or more anionic copolymers, optionally one or more polymers comprising quaternary amines, optionally one or more compounds that adjust the pH of the polishing compositions, water, and optionally one or more additives. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.

Abstract: A method for evaluating center segregation of a continuous cast slab is provided. The method of the present invention includes (A) creating a center segregation image of a slab using an etching solution comprising a picric acid (C6H3N3O7), a cupric chloride (CuCl2), sodium laurylbenzenesulfonate (C18H29SO3Na) and the remainder of distilled water; and (B) evaluating the center segregation of a slab by scanning the image and applying the following Formula. The method creates an image of center segregation even for low-carbon steel having carbon (C) in an amount of 0.04 wt % or less as well as ultra low-sulfur steel having sulfur (S) in an amount of 50 ppm or less.

Abstract: This invention provides a dense, high-purity colloidal silica containing silica secondary particles having a branched and/or bent structure, and a production method thereof. Specifically, this invention provides a method for producing a colloidal silica, comprising the steps of 1) preparing a mother liquid containing an alkali catalyst and water, and having a pH of 9 to 12; and 2) adding a hydrolysis liquid obtained by hydrolysis of an alkyl silicate to the mother liquid, wherein the step of adding the hydrolysis liquid to the mother liquid sequentially comprises A) step 1 of adding the hydrolysis liquid until the pH of the resulting liquid mixture becomes less than 7; B) step 2 of adding an aqueous alkali solution until the pH of the liquid mixture becomes 7 or more; and C) step 3 of adding the hydrolysis liquid while maintaining the pH of the liquid mixture at 7 or more, and a colloidal silica containing silica secondary particles having a branched and/or bent structure, obtained by this method.

Abstract: The present invention provides a CMP abrasive slurry for polishing insulation film, that allow efficiently and high-speed polishing of insulation films such as SiO2 film and SiOC film in the CMP method of flattening an interlayer insulation film, a BPSG film, an insulation film for shallow trench isolation, or a wiring-insulating film layer, a polishing method by using the abrasive slurry, and a semiconductor electronic part polished by the polishing method. A CMP abrasive slurry for polishing insulation film containing cerium oxide particles, a dispersant, a water-soluble polymer having amino groups on the side chains and water, a polishing method by using the CMP abrasive slurry, and a semiconductor electronic part polished by the polishing method.

Abstract: Elemental fluorine and carbonyl fluoride are suitable etchants for producing microelectromechanical devices (“MEMS”). They are preferably applied as mixtures with nitrogen and argon. If applied in Bosch-type process, C4F6 is a highly suitable passivating gas.

Abstract: Compositions and methods for chemical texturing a surface of a polycrystalline silicon wafer to be used in the manufacture of solar cells provide increased efficiency in the manufacture and operation of solar cells. The compositions and methods disclosed herein include first and second components, wherein the first component is a UKON etch composition, including a hydrofluoric acid/nitric acid mixture and water, while the second component includes a silicon wafer texturing enhancer (SWTE).

Abstract: A composition for providing acid resistance to copper surfaces in the production of multilayered printed circuit boards. The composition comprises an acid, an oxidizer, a five-membered heterocyclic compound and a thiophosphate or a phosphorous sulfide compound. In a preferred embodiment, the phosphorous compound is phosphorus pentasulfide. The composition is applied to a copper or copper alloy substrate and the copper substrate is thereafter bonded to a polymeric material.

Abstract: The present invention provides a polishing composition that can be suitably used in polishing of polysilicon, and a polishing method using the polishing composition. The polishing composition contains abrasive grains and an anionic surfactant having a monooxyethylene group or a polyoxyethylene group and has a pH of 9 to 12. If the anionic surfactant contained in the polishing composition has a polyoxyethylene group, the number of repeating oxyethylene units in the polyoxyethylene group is preferably 2 to 8. The anionic surfactant contained in the polishing composition can be an anionic surfactant that has a phosphate group, a carboxy group, or a sulfo group as well as a monooxyethylene group or a polyoxyethylene group. The content of the anionic surfactant in the polishing composition is preferably 20 to 500 ppm.

Abstract: A slurry for polishing a phase change material, such as Ge—Sb—Te, or germanium-antimony-tellurium (GST), includes abrasive particles of sizes that minimize at least one of damage to (e.g., scratching of) a polished surface of phase change material, an amount of force to be applied during polishing, and a static etch rate of the phase change material, while optionally providing selectivity for the phase change material over adjacent dielectric materials. A polishing method includes applying a slurry with one or more of the above-noted properties to a phase change material, as well as bringing the polishing pad into frictional contact with the phase change material. Polishing systems are disclosed that include a plurality of sources of solids (e.g., abrasive particles) and provide for selectivity in the solids that are applied to a substrate or polishing pad.

Abstract: The present invention relates to a CMP slurry composition for polishing tungsten comprising a abrasive and a polishing chemical, wherein the abrasive comprises colloidal silica dispersed in ultra-pure water, and the polishing chemical comprises hydrogen peroxide, ammonium persulfate and iron nitrate. The slurry composition is not discolored and has good etching selectivity, so as to be applied to a CMP process.

Abstract: The invention relates to a polishing liquid for metal film comprising 7.0% by weight or more of an oxidizer for metal, a water-soluble polymer, an oxidized metal dissolving agent, a metal anticorrosive agent and water, provided that the total amount of the polishing liquid for metal film is 100% by weight, wherein the water-soluble polymer has a weight average molecular weight of 150,000 or more and is at least one member selected from among a polycarboxylic acid, a salt of a polycarboxylic acid, and a polycarboxylic acid ester. According to the invention, provided is a polishing liquid for metal film, by which polishing can be performed at a high rate even under a polishing pressure as low as 1 psi or lower, and such that a polished film after polishing is excellent in planarity, furthermore, with which a high polishing rate can be obtained even in an initial stage of polishing, and provided is a polishing method using the polishing liquid.

Abstract: A chemical mechanical polishing slurry composition is provided, having, as initial components: water; an abrasive, wherein the abrasive is colloidal silica abrasive; a halogenated quaternary ammonium compound according to formula (I); optionally, a diquaternary substance according to formula (II); and, optionally, a pH adjusting agent selected from phosphoric acid, nitric acid, sulfuric acid, hydrochloric acid, ammonium hydroxide and potassium hydroxide; wherein the chemical mechanical polishing slurry composition has a pH of 2 to <7. Also, provided are methods for making the chemical mechanical polishing slurry composition and for using the chemical mechanical polishing composition to polish a substrate.

Abstract: Provided herein are chemical mechanical polishing (CMP) slurries and methods for producing the same. Embodiments of the invention include CMP slurries that include (a) a metal oxide; (b) a pH-adjusting agent; (c) a fluorinated surfactant; and (d) a quaternary ammonium surfactant. In some embodiments, the fluorinated surfactant is a non-ionic perfluoroalkyl sulfonyl compound. Also provided herein are methods of polishing a polycrystalline silicon surface, including providing a slurry composition according to an embodiment of the invention to a polycrystalline silicon surface and performing a CMP process to polish the polycrystalline silicon surface.

Abstract: Exposed copper regions on a semiconductor substrate can be etched by a wet etching solution comprising (i) one or more complexing agents selected from the group consisting of bidentate, tridentate, and quadridentate complexing agents; and (ii) an oxidizer, at a pH of between about 5 and 12. In many embodiments, the etching is substantially isotropic and occurs without visible formation of insoluble species on the surface of copper. The etching is useful in a number of processes in semiconductor fabrication, including for partial or complete removal of copper overburden, for planarization of copper surfaces, and for forming recesses in copper-filled damascene features. Examples of suitable etching solutions include solutions comprising a diamine (e.g., ethylenediamine) and/or a triamine (e.g., diethylenetriamine) as bidentate and tridentate complexing agents respectively and hydrogen peroxide as an oxidizer.

Abstract: A chemical mechanical polishing aqueous dispersion including (A) silica particles, and (B1) an organic acid, the sodium content, the potassium content, and the ammonium ion content of the silica particles (A) determined by ICP atomic emission spectrometry, ICP mass spectrometry, or ammonium ion quantitative analysis using ion chromatography having a relationship in which the sodium content is 5 to 500 ppm and at least one of the potassium content and the ammonium ion content is 100 to 20,000 ppm.

Abstract: Native oxide removing and activating solutions containing fluoride ions and organic acids are used in the formation of metal layers on semiconductor wafers. The method may also be used in the formation of silicides and for preparing the metal silicides for additional metal plating and build-up. The solutions and methods may be used in the manufacture of photovoltaic devices and other electronic devices and components.

Abstract: An aqueous polishing composition having a pH of 3 to 11 and comprising (A) abrasive particles which are positively charged when dispersed in an aqueous medium free from component (B) and of a pH of 3 to 9 as evidenced by the electrophoretic mobility; (B) anionic phosphate dispersing agents; and (C) a polyhydric alcohol component selected from the group consisting of (c1) water-soluble and water-dispersible, aliphatic and cycloaliphatic, monomeric, dimeric and oligomeric polyols having at least 4 hydroxy groups; (c2) a mixture consisting of (c21) water-soluble and water-dispersible, aliphatic and cycloaliphatic polyols having at least 2 hydroxy groups; and (c22) water-soluble or water-dispersible polymers selected from linear and branched alkylene oxide homopolymers and copolymers (c221); and linear and branched, aliphatic and cycloaliphatic poly(N-vinylamide) homopolymers and copolymers (c222); and (c3) mixtures of (c1) and (c2); and a process for polishing substrates for electrical, mechanical and optical de

Abstract: A chemical solution that removes undesired metal hard mask yet remains selective to the device wiring metallurgy and dielectric materials. The present disclosure decreases aspect ratio by selective removal of the metal hard mask before the metallization of the receiving structures without adverse damage to any existing metal or dielectric materials required to define the semiconductor device, e.g. copper metallurgy or device dielectric. Thus, an improved aspect ratio for metal fill without introducing any excessive trapezoidal cross-sectional character to the defined metal receiving structures of the device will result.

Abstract: A polishing composition contains a water-soluble polymer, a polishing accelerator, and an oxidizing agent. The water-soluble polymer is a polyamide-polyamine polymer having an amine value of 150 mg KOH/1 g·solid or greater.

Abstract: An aqueous polishing composition comprising (A) at least one water-soluble or water-dispersible compound selected from the group consisting of N-substituted diazenium dioxides and N?-hydroxy-diazenium oxide salts; and (B) at least one type of abrasive particles; the use of the compounds (A) for manufacturing electrical, mechanical and optical devices and a process for polishing substrate materials for electrical, mechanical and optical devices making use of the aqueous polishing composition.

Abstract: According to the present invention, there is provided an etching solution used for selectively etching a dummy gate made of silicon in a process for producing a transistor including a laminate formed of at least a high dielectric material film and an aluminum metal gate by the method of removing the dummy gate made of silicon to replace the dummy gate with the aluminum metal gate, and a process for producing a transistor using the etching solution. The present invention relates to a silicon etching solution used for etching the dummy gate made of silicon which includes 0.1 to 40% by weight of at least one alkali compound selected from the group consisting of ammonia, a diamine and a polyamine represented by the general formula (1), 5 to 50% by weight of at least one polyhydric alcohol represented by the general formula (2) and 40 to 94.9% by weight of water, and a process for producing a transistor using the silicon etching solution.

Abstract: A chemical solution including an aqueous solution, an oxidizing agent, and a pH stabilizer selected from quaternary ammonium salts and quaternary ammonium alkali can be employed to remove metallic materials in cavities for forming a semiconductor device. For example, metallic materials in gate cavities for forming a replacement gate structure can be removed by the chemical solution of the present disclosure with, or without, selectivity among multiple metallic materials such as work function materials. The chemical solution of the present disclosure provides different selectivity among metallic materials than known etchants in the art.

Abstract: The invention relates to a polishing liquid for metal film comprising 7.0% by weight or more of an oxidizer for metal, a water-soluble polymer, an oxidized metal dissolving agent, a metal anticorrosive agent and water, provided that the total amount of the polishing liquid for metal film is 100% by weight, wherein the water-soluble polymer has a weight average molecular weight of 150,000 or more and is at least one member selected from among a polycarboxylic acid, a salt of a polycarboxylic acid, and a polycarboxylic acid ester. According to the invention, provided is a polishing liquid for metal film, by which polishing can be performed at a high rate even under a polishing pressure as low as 1 psi or lower, and such that a polished film after polishing is excellent in planarity, furthermore, with which a high polishing rate can be obtained even in an initial stage of polishing, and provided is a polishing method using the polishing liquid.

Abstract: The present invention relates to a method for the wet-chemical edge deletion of solar cells. An etching paste is applied to the edge of a solar cell substrate surface and after the reaction is complete, the paste residue is removed. Optionally, the substrate surface is cleaned and dried. The etching paste comprises 85% H3PO4, NH4HF2 and 65% HNO3 in a ratio in the range from 7:1:1.5 to 10:1:3.5, based on the weight.