Abstract: An ultraviolet (UV) light emitting structure, a UV light emitting device, and a method of making a UV light emitting structure or device, wherein the UV light emitting structure or device has an AlN or AlGaN injection layer with high aluminum content between the light emitting active region and the p-doped layers and wherein the injection layer has a thickness such that holes can tunnel from the p-side of the semiconductor-based ultraviolet light emitting diode structure through the injection layer in the active zone and also reducing leakage electrons out of the active zone.

Abstract: A light-emitting device includes: a substrate; a light-emitting structure including first and second nitride-based semiconductor layers on the substrate and an active layer between the first and second nitride-based semiconductor layers; an insulating layer on a top surface of the light-emitting structure; a protrusion on the insulating layer, a top surface of the protrusion being larger than a bottom surface thereof, the protrusion having a trapezoidal cross-section; a transparent conductive layer covering a top surface of the light-emitting structure, a top surface of the insulating layer, and the top surface of the protrusion and having a constant thickness along the top surface of the light-emitting structure, the top surface of the insulating layer, and the top surface of the protrusion; and an electrode covering at least one of inclined surfaces of the protrusion on the transparent conductive layer.

Abstract: A substrate incorporating semiconductor regions electrically isolated by shallow trenches filled with hexagonal, textured or columnar boron nitride. A process for filling shallow trenches in a semiconductor substrate with columnar textured boron nitride using pulsed plasma enhanced chemical vapor deposition (Pulsed PECVD) and plasma assisted atomic layer deposition (PAALD).

Abstract: There is provided a display device including a light-emitting element body part, a low refractive index layer part which is provided over a light output surface of the light-emitting element body part and has a first refractive index, and a packaging member which is provided to seal the light-emitting element body part and the low refractive index layer part inside the packaging member, has a planar light output surface, and has a second refractive index which is greater than the first refractive index.

Abstract: Apparatus for manufacturing a hydrogen 21 line precision measuring device, comprising: a hydrogen 21 line generator, which may be a hydrogen maser, which generates an emission spectrum comprising a spectral line at substantially 1420.40575177 MHz and communicates the spectral line to a frequency counter; which is adapted to receive the spectral line, measures frequency of the spectral line, and communicates an indication of the measured frequency to a computer, which receives the indicated frequency, calculates wavelength of the indicated frequency and communicates control signals to a laser or other marking device to scribe markings on a measuring device substrate at one or more intervals of the calculated wavelength and subdivisions thereof, resulting in the measuring device substrate having a plurality of scribed markings, each pair of the scribed markings at an interval of substantially the calculated wavelength and each of the subdivisions thereof equaling a portion of the calculated wavelength.

Abstract: The present invention provides a method for producing a Group III nitride semiconductor crystal and a GaN substrate, in which the transfer of dislocation density or the occurrence of cracks can be certainly reduced on a growth substrate, and the Group III nitride semiconductor crystal can be easily separated from a seed crystal. A mask layer is formed on a GaN substrate, to thereby form an exposed portion of the GaN substrate, and an unexposed portion of the GaN substrate. Through a flux method, a GaN layer is formed on the exposed portions of the GaN substrate in a molten mixture containing at least Group III metal and Na. At that time, non-crystal portions containing the components of the molten mixture are formed on the mask layer so as to be covered with the GaN layer grown on the GaN substrate and the mask layer.

Abstract: Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially-single-particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.

Abstract: In one instance, the invention provides a group III nitride crystal having a first side exposing nitrogen polar c-plane of single crystalline or highly oriented polycrystalline group III nitride and a second side exposing group III polar surface, polycrystalline phase, or amorphous phase of group III nitride. Such structure is useful as a seed crystal for ammonothermal growth of bulk group III nitride crystals. The invention also discloses the method of fabricating such crystal. The invention also discloses the method of fabricating a bulk crystal of group III nitride by ammonothermal method using such crystal.

Abstract: Disclosed is a light emitting device including a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer, a first electrode electrically connected with the first conductive semiconductor layer, a mirror layer under the light emitting structure, a window semiconductor layer between the mirror layer and the light emitting structure, a reflective layer under the mirror layer, a conductive contact layer between the reflective layer and the window semiconductor layer and in contact with the second conductive semiconductor layer, and a conductive support substrate under the reflective layer. The window semiconductor layer includes a C-doped P-based semiconductor doped with a higher dopant concentration. The conductive contact layer includes material different from that of the mirror layer with a thickness thinner than that of the window semiconductor layer.

Abstract: The structure and methods of fabricating a high efficiency compact solid state neutron detector based on III-Nitride semiconductor structures deposited on a substrate. The operation of the device is based on absorption of neutrons, which results in generation of free carriers.

Abstract: According to one embodiment, a nitride semiconductor device includes a stacked body and a functional layer. The stacked body includes an AlGaN layer of AlxGa1-xN (0<x?1), a first Si-containing layer, a first GaN layer, a second Si-containing layer, and a second GaN layer. The first Si-containing layer contacts an upper surface of the AlGaN layer. The first Si-containing layer contains Si at a concentration not less than 7×1019/cm3 and not more than 4×1020/cm3. The first GaN layer is provided on the first Si-containing layer. The first GaN layer includes a protrusion having an oblique surface tilted with respect to the upper surface. The second Si-containing layer is provided on the first GaN layer. The second Si-containing layer contains Si. The second GaN layer is provided on the second Si-containing layer. The functional layer is provided on the stacked body. The functional layer includes a nitride semiconductor.

Abstract: A method of manufacturing a light-emitting device comprises the steps of: providing a substrate; forming a mask block contacting the substrate and exposing a portion of the substrate; implanting an ion into the portion of the substrate to form an ion implantation region; and forming a semiconductor stack on the substrate such that multiple cavities are formed between the semiconductor stack and the ion implantation region; wherein the mask block comprises a material made of metal or oxide.

Abstract: A semiconductor structure, such as a group III nitride-based semiconductor structure is provided. The semiconductor structure includes a cavity containing semiconductor layer. The cavity containing semiconductor layer can have a thickness greater than two monolayers and a multiple cavities. The cavities can have a characteristic size of at least one nanometer and a characteristic separation of at least five nanometers.

Abstract: An LED comprises a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked in that order and located on a surface of the substrate. A number of first three-dimensional nano-structures are located on a surface of the second semiconductor layer away from the active layer. The first three-dimensional nano-structures are linear protruding structures, a cross-section of each linear protruding structure is an arc. The present disclosure also relates to an optical element.

Abstract: A method of forming an Ohmic contact including forming a Ta layer in a contact area of a barrier, forming a Ti layer on the first Ta layer, and forming an Al layer on the Ti layer, wherein the barrier layer comprises AlGaN having a 10% to 40% Al composition and a thickness in a range between 30 ? to 100 ?, and wherein the barrier layer is on a channel layer comprising GaN.

Abstract: A method for producing SOS substrates which can be incorporated into a semiconductor production line, and is capable of producing SOS substrates which have few defects and no variation in defects, and in a highly reproducible manner, or in other words, a method for producing SOS substrates by: forming an ion-injection region (3) by injecting ions from the surface of a silicon substrate (1); adhering the ion-injection surface of the silicon substrate (1) and the surface of a sapphire substrate (4) to one another directly or with an insulating film (2) interposed therebetween; and then obtaining an SOS substrate (8) having a silicon layer (6) on the sapphire substrate (4), by detaching the silicon substrate in the ion-injection region (3). This method is characterized in that the orientation of the sapphire substrate (4) is a C-plane having an off-angle of 1 degree or less.

Abstract: A superlattice cell that includes Group IV elements is repeated multiple times so as to form the superlattice. Each superlattice cell has multiple ordered atomic planes that are parallel to one another. At least two of the atomic planes in the superlattice cell have different chemical compositions. One or more of the atomic planes in the superlattice cell one or more components selected from the group consisting of carbon, tin, and lead. These superlattices make a variety of applications including, but not limited to, transistors, light sensors, and light sources.

Abstract: A multiple quantum well structure includes a plurality of well-barrier sets arranged along a direction. Each of the well-barrier sets includes a barrier layer, at least one intermediate level layer, and a well layer. A bandgap of the barrier layer is greater than an average bandgap of the intermediate level layer, and the average bandgap of the intermediate level layer is greater than a bandgap of the well layer. The barrier layers, the intermediate level layers, and the well layers of the well-barrier sets are stacked by turns. Thicknesses of at least parts of the well layers in the direction gradually decrease along the direction, and thicknesses of at least parts of the intermediate level layers in the direction gradually increase along the direction. A method for manufacturing a multiple quantum well structure is also provided.

Abstract: A light emitting diode includes a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer.

Abstract: An ultraviolet light emitting apparatus may include a chamber, at least one semiconductor light emitting device, an electron beam irradiation source, and first and second connection electrodes configured to apply a voltage from an external power source to the at least one semiconductor light emitting device. The chamber may define an internal space and include a light emission window. The at least one semiconductor light emitting device may be on the light emission window and include a first conductivity type nitride semiconductor layer, an undoped nitride semiconductor layer, and an active layer between the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer. The electron beam irradiation source may be in the internal space of the chamber and configured to irradiate an electron beam onto the undoped nitride semiconductor layer.

Abstract: The present invention provides a surface mounted light emitting apparatus which has long service life and favorable property for mass production, and a molding used in the surface mounted light emitting apparatus. The surface mounted light emitting apparatus comprises the light emitting device 10 based on GaN which emits blue light, the first resin molding 40 which integrally molds the first lead 20 whereon the light emitting device 10 is mounted and the second lead 30 which is electrically connected to the light emitting device 10, and the second resin molding 50 which contains YAG fluorescent material and covers the light emitting device 10. The first resin molding 40 has the recess 40c comprising the bottom surface 40a and the side surface 40b formed therein, and the second resin molding 50 is placed in the recess 40c.

Abstract: In an aspect, an organic light emitting diode device including a first electrode, a second electrode facing the first electrode, and an emission layer positioned between the first electrode and second electrode, wherein the first electrode includes samarium (Sm) is provided.

Abstract: There is provided a light-emitting device comprising a light-emitting element. The light-emitting device of the present invention comprises an electrode part for the light-emitting element; a reflective layer provided on the electrode part; and the light-emitting element provided on the reflective layer such that the light-emitting element is in contact with at least a part of the reflective layer, wherein the light-emitting element and the electrode part are in an electrical connection with each other by mutual surface contact via the at least a part of the reflective layer, wherein the electrode part serves as a supporting layer for supporting the light-emitting element, and wherein the electrode part extends toward the outside of the light-emitting element and beyond the light-emitting element.

Abstract: The present invention relates to light-emitting diodes (LEDs), and related components, processes, systems, and methods. In certain embodiments, an LED that provides improved optical and thermal efficiency when used in optical systems with a non-rectangular input aperture (e.g., a circular aperture) is described. In some embodiments, the emission surface of the LED and/or an emitter output aperture can be shaped (e.g., in a non-rectangular shape) such that enhanced optical and thermal efficiencies are achieved. In addition, in some embodiments, chip designs and processes that may be employed in order to produce such devices are described.

Abstract: A quantum dot backlight module includes: a reflector, a light guide plate disposed above the reflector, a plurality of dot units disposed on an upper surface of the light guide plate at intervals, and a quantum dot packaged in each of the plurality of dot units, and light emitting diodes disposed on a edge side of the light guide plate. According to the present invention, the quantum dot material can be used less, which is good for reducing the production cost. Besides, heat can be effectively radiated from the light emitting diodes. Wide color gamut is realized as well.

Abstract: An OLED device comprises a cathode, an anode, and has therebetween a light-emitting layer wherein the light-emitting layer comprises (a) a 2-arylanthracene compound and (b) a light-emitting second anthracene compound having amino substitution at a minimum of two positions, wherein at least one amine is substituted at the 2 position of the second anthracene compound.

Abstract: A light emitting device is provided that may include a light emitting structure including a first conductivity-type semiconductor layer, an active layer provided on the first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer provided on the active layer, a first electrode that conductively contacts the first conductivity-type semiconductor layer, an insulating layer provided on a portion of the light emitting structure and the first electrode, and a second electrode that conductively contacts the second conductivity-type semiconductor layer, the first electrode including a first portion protruding from a side surface of the first conductivity-type semiconductor layer.

Abstract: A method including forming a diamond material on the surface of a substrate; forming a first contact and a separate second contact; and patterning the diamond material to form a nanowire between the first contact and the second contact. An apparatus including a first contact and a separate second contact on a substrate; and a nanowire including a single crystalline or polycrystalline diamond material on the substrate and connected to each of the first contact and the second contact.

Abstract: Provided is an organic light-emitting display apparatus including a substrate; a first pixel electrode for first color emission, a second pixel electrode for second color emission, and a third pixel electrode for third color emission, the first pixel electrode, the second pixel electrode, and the third pixel electrode being spaced apart from each other on the substrate; a first color emission layer on the first pixel electrode, a second color emission layer on the second pixel electrode, and a third color emission layer on the third pixel electrode; an opposite electrode on the first color emission layer, the second color emission layer, and the third color emission layer; and a capping layer that includes a same material as the opposite electrode and is porous.

Abstract: In an optical substrate (1), a concave-convex structure (12) including a plurality of independent convex portions (131 to 134) and concave portions (14) provided between the convex portions (131 to 134) is provided in a surface. The average interval Pave between the adjacent convex portions (131 to 134) in the concave-convex structure (12) satisfies 50 nm?Pave?1500 nm, and the convex portion (133) having a convex portion height hn satisfying 0.6 h?hn?0 h for the average convex portion height Have is present with a probability Z satisfying 1/10000?Z?1/5. When the optical substrate (1) is used in a semiconductor light-emitting element, dislocations in a semiconductor layer are dispersed to reduce the dislocation density, and thus internal quantum efficiency IQE is improved, and a waveguide mode is removed by light scattering and thus the light the extraction efficiency LEE is increased, with the result that the efficiency of light emission of the semiconductor light-emitting element is enhanced.

Abstract: The present invention provides a transistor element having a laminated structure, the laminated structure comprising a sheet-like base electrode being arranged between an emitter electrode and a collector electrode; at least one p-type organic semiconductor layer being provided on each of the surface and the back sides of the base electrode; and a current transmission promotion layer being formed, on each of the surface and back sides of the base electrode, between the base electrode and the p-type organic semiconductor layer or layers provided on each of the surface and back sides of the base electrode. According to the present invention, it becomes possible to provide a transistor element (MBOT) that is, in particular, stably supplied through a simple production process, has a structure capable of being mass-produced, and has a large current modulation effect and an excellent ON/OFF ratio at a low voltage in the emitter electrode and the collector electrode.

Abstract: A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, an ohmic layer, an electrode layer, an adhesion layer, and a channel layer. The light-emitting structure may include a compound semiconductor layer. The electrode may be disposed on the light-emitting structure. The ohmic layer may be disposed under the light-emitting structure. The electrode layer may include a reflective metal under the ohmic layer. The adhesion layer may be disposed under the electrode layer. The channel layer may be disposed along a bottom edge of the light-emitting structure.

Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; an intermediate layer formed on the substrate; a transparent bonding layer; a first semiconductor window layer bonded to the semiconductor layer through the transparent bonding layer; and a light-emitting stack formed on the first semiconductor window layer. The intermediate layer has a refractive index between the refractive index of the substrate and the refractive index of the first semiconductor window layer.

Abstract: Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 104 cm?2 and an inclusion density below 104 cm?3 and/or a MV density below 104 cm?3.

Abstract: To provide a Group III nitride semiconductor light-emitting device production method, which is intended to grow a flat light-emitting layer without reducing the In concentration of the light-emitting layer. The method of the techniques includes an n-side superlattice layer formation step, in which an InGaN layer, a GaN layer disposed on the InGaN layer, and an n-type GaN layer disposed on the GaN layer are repeatedly formed. In formation of the InGaN layer, nitrogen gas is supplied as a carrier gas. In formation of the n-type GaN layer, a first mixed gas formed of nitrogen gas and hydrogen gas is supplied as a carrier gas. The first mixed gas has a hydrogen gas ratio by volume greater than 0% to 75% or less.

Abstract: The present invention relates to a point source light-emitting diode containing a support substrate, a metal layer, a first conduction-type layer, an active layer, a second conduction-type layer containing a current-narrowing structure, and a topside electrode having an aperture, stacking in this order, in which the metal layer is provided locally in an area corresponding to the aperture and has a metal reflection face by which a light generated in the active layer is reflected towards the aperture side, and the point source light-emitting diode further contains a light-reflection reduction face having a lower reflectivity and/or a higher absorptivity than the metal reflection face, provided around the metal reflection face.

Abstract: A thin film transistor (TFT) substrate which may facilitate subsequent TFT processing by reducing an elevation difference on the top surface of the substrate is disclosed. Aspects include an organic light-emitting apparatus including the TFT substrate, a method of manufacturing the TFT substrate, and a method of manufacturing the organic light-emitting apparatus. In one aspect the TFT substrate includes: a substrate; a height adjusting layer that is disposed on the substrate and has a thickness in a first region greater than a thickness in a second region; and a TFT that is formed on the height adjusting layer to correspond to the second region of the height adjusting layer.

Abstract: The present invention provides an organic light emitting diode comprising a substrate; a transparent cathode; an anode; and an organic material layer interposed between the transparent cathode and the anode, wherein the organic material layer comprises a light emitting layer and an n-type doped electron transport layer, the n-type doped electron transport layer includes an electron transport material and an n-type dopant and is disposed between the transparent cathode and the light emitting layer, and a method for manufacturing the same.

Abstract: High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.

Abstract: A GaN based LED epitaxial structure and a method for manufacturing the same. The GaN based LED epitaxial structure may include: a substrate; and a GaN based LED epitaxial structure grown on the substrate, wherein the substrate is a substrate containing a photoluminescence fluorescent material. The photoelectric efficiency of the LED epitaxial structure is enhanced and the amount of heat generated from a device is reduced by utilizing a rare earth element doped Re3Al5O12 substrate; since the LED epitaxial structure takes a fluorescence material as a substrate, a direct white light emission may be implemented by such an LED chip manufactured by the epitaxial structure, so as to simplify the manufacturing procedure of the white light LED light source and to reduce production cost. The defect density of the epitaxial structure is reduced by firstly epitaxial growing, patterning the substrate and then laterally growing a GaN based epitaxial structure.

Abstract: Provided is a crystalline multilayer structure having good semiconductor properties. In particular, the crystalline multilayer structure has good electrical properties as follows: the controllability of conductivity is good; and vertical conduction is possible. A crystalline multilayer structure includes a metal layer containing a uniaxially oriented metal as a major component and a semiconductor layer disposed directly on the metal layer or with another layer therebetween and containing a crystalline oxide semiconductor as a major component. The crystalline oxide semiconductor contains one or more metals selected from gallium, indium, and aluminum and is uniaxially oriented.

Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

Abstract: A semiconductor device includes a substrate, a seed layer, a first patterned metal layer, a dielectric layer and a second metal layer. The seed layer is disposed on a surface of the substrate. The first patterned metal layer is disposed on the seed layer and has a first thickness. The first patterned metal layer includes a first part and a second part. The dielectric layer is disposed on the first part of the first patterned metal layer. The second metal layer is disposed on the dielectric layer and has a second thickness, where the first thickness is greater than the second thickness. The first part of the first patterned metal layer, the dielectric layer and the second metal layer form a capacitor. The first part of the first patterned metal layer is a lower electrode of the capacitor, and the second part of the first patterned metal layer is an inductor.

Abstract: Disclosed is an ultraviolet light-emitting device. The light-emitting device includes: an n-type contact layer including a GaN layer; a p-type contact layer including an AlGaN or AlInGaN layer; and an active region of multiple quantum well structure positioned between the n-type contact layer and the p-type contact layer. In addition, the active region of multiple quantum well structure includes a GaN or InGaN layer with a thickness less than 2 nm, radiating an ultraviolet ray with a peak wavelength of 340 nm to 360 nm.

Abstract: A semiconductor light emitting device including a plurality of light emitting elements can be miniaturized while enabling to emit light with high luminance. The semiconductor light emitting device can include a mounting substrate, and a plurality of semiconductor light emitting elements mounted on the mounting substrate side by side, each of the semiconductor light emitting elements having a semiconductor structure layer that can include a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type opposite to the first conductivity type, which are layered in that order. Each of the semiconductor light emitting elements can have a resonator constituted by end surfaces of the semiconductor structure layer opposite to each other, and also has a recessed portion recessed from the surface of the second semiconductor layer toward the active layer.

Abstract: A light emitting device (LED) package and a manufacturing method thereof are provided. The LED package includes an LED including a first electrode pad and a second electrode pad disposed on one surface thereof; a bonding insulating pattern layer configured to expose the first electrode pad and the second electrode pad; a substrate including a via hole bored from a first surface to a second surface and a wiring metal layer formed on an inner surface of the via hole to extend to a part of the second surface; and a bonding metal pattern layer bonded to the wiring metal layer exposed through the via hole at the first surface of the substrate and also bonded to the first electrode pad and the second electrode pad.

Abstract: An organic light-emitting module including a light-transmissive substrate, a light extracting structure, a first electrode, an organic light-emitting stack, a second electrode, and a transparent carrying board is provided. The light-transmissive substrate has an index of refraction greater than 1.5 and has a first surface and a second surface opposite to the first surface. The light extracting structure is disposed at the first surface. The first electrode is disposed on the second surface of the light-transmissive substrate. The organic light-emitting stack is disposed on the first electrode. The second electrode is disposed on the organic light-emitting stack. The transparent carrying board is connected with the light extracting structure. A minimum distance between the light extracting structure and the transparent carrying board is less than or equal to 125 ?m.

Abstract: A nitride light-emitting diode including: a substrate with sub-micro patterns over the surface, which is divided into a growth region and a non-growth region; a growth blocking layer, formed in the non-growth region of the substrate for blocking epitaxial growth in the non-growth region of the substrate; a light-emitting epitaxial layer, comprising an n-type layer, a light-emitting layer and a p-type layer, formed in the growth region of the substrate, which extends to the non-growth region through lateral epitaxy and covers the growth blocking layer; wherein, the refractive index of the growth blocking layer is less than that of the light-emitting epitaxial layer and the growth blocking layer forms undulating morphology along the sub-micro patterns of the substrate, thus increasing light extraction interface of LED, generating refractive index difference between the light-emitting epitaxial layer and the light extraction interface and improving light extraction efficiency.

Abstract: A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.

Abstract: A semiconductor device comprises a semiconductor layer including a mesa structure and a peripheral surface extending around the mesa structure, the mesa structure having a plateau shape with an upper surface and a side surface; a Schottky electrode forming a Schottky junction with the upper surface; an insulating film extending from the peripheral surface, across the side surface, and onto the Schottky electrode, the insulating film having an opening formed on the Schottky electrode; and a wiring electrode electrically connected to the Schottky electrode inside the opening, the wiring electrode extending from inside of the opening, across a portion of the insulating film formed on the side surface, and onto another portion of the insulating film formed on the peripheral surface.