With Particular Semiconductor Material Patents (Class 257/103)
-
Patent number: 10186641Abstract: A light emitting device includes a light emitting element, a frame, a first light-transmissive member, and a second light-transmissive member. The light emitting element includes an element upper surface from which a light is configured to be emitted, an element bottom surface opposite to the element upper surface, and an element lateral surface connecting the element upper surface and the element bottom surface. The frame is provided to surround the light emitting element to be opposite to the element lateral surface. The first light-transmissive member is provided on the element upper surface and the element lateral surface to contact the frame. The first light-transmissive member covers the element upper surface and the element lateral surface. The second light-transmissive member is provided on the first light-transmissive member.Type: GrantFiled: September 7, 2017Date of Patent: January 22, 2019Assignee: NICHIA CORPORATIONInventors: Toru Hashimoto, Yukihiro Shibano
-
Patent number: 10177273Abstract: A UV light emitting device includes: an n-type contact layer including an AlGaN layer or an AlInGaN layer; a p-type contact layer including a AlGaN layer or an AlInGaN layer; and an active layer of a multi-quantum well structure placed between the n-type contact layer and the p-type contact layer. The active area of the multi-quantum well structure includes barrier layers and well layers. The well layers include electrons and holes present according to probability distributions thereof. The barrier layers are formed of AlInGaN or AlGaN and have an Al content of 10% to 30%. At least one of the barrier layers disposed between the well layers has a smaller thickness than of the well layers and at least one of the barrier layers placed between the well layers has a thickness and a band gap preventing electrons and holes injected into and confined in a well layer adjacent to the barrier layer from spreading into another adjacent well layer.Type: GrantFiled: July 28, 2015Date of Patent: January 8, 2019Assignee: Seoul Viosys Co., Ltd.Inventors: Chang Suk Han, Hwa Mok Kim, Hyo Shik Choi, Mi So Ko, A Ram Cha Lee
-
Patent number: 10177229Abstract: A semiconductor material includes a compositionally-graded transition layer, an intermediate later and a gallium nitride material layer. The compositionally-graded transition layer has a back surface and a top surface, and includes a gallium nitride alloy. The gallium concentration in the compositionally-graded transition layer increases from the back surface to the front surface. The intermediate layer is formed under the compositionally-graded transition layer. The gallium nitride material layer is formed over the compositionally-graded transition layer, and has a crack level of less than 0.005 ?m/?m2.Type: GrantFiled: August 18, 2016Date of Patent: January 8, 2019Assignee: MACOM Technology Solutions Holdings, Inc.Inventors: T. Warren Weeks, Jr., Edwin L. Piner, Thomas Gehrke, Kevin J. Linthicum
-
Patent number: 10176471Abstract: The invention generally relates to systems and methods for providing product information via an interactive display device in a dynamic format. The present invention implements a system for defining product variations and assigning references to them at the point of sale or delivery. The system further includes an interactive display device for providing informational data associated with a product variation assigned to a product upon recognition of the product in contact therewith. The present invention is unique in allowing a seller to assign or modify a reference associated with a unique identifier, such as a barcode label, at the point of sale or delivery, thereby changing the information delivered to the buyer based on details about the specific unit sold, the circumstances of the transaction, or the identity of the buyer.Type: GrantFiled: June 8, 2016Date of Patent: January 8, 2019Assignee: GeoPRI, LLCInventor: Matthew Hodges
-
Patent number: 10168007Abstract: A light-emitting device includes blue LED chips having a light emission peak wavelength of at least 430 nm and at most 470 nm and red LED chips having a light emission peak wavelength of at least 600 nm and at most 640 nm. The light-emitting device includes a yellow phosphor having a light emission peak wavelength of at least 500 nm and at most 580 nm and a red phosphor having a light emission peak wavelength of at least 640 nm and at most 670 nm. The light-emitting device emits white light through mixing of light emitted by each of the blue LED chips, the red LED chips, the yellow phosphor, and the red phosphor.Type: GrantFiled: December 20, 2016Date of Patent: January 1, 2019Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Koji Omura, Ayako Tsukitani
-
Patent number: 10163975Abstract: A light emitting apparatus is disclosed. The light emitting apparatus includes a light-transmissive substrate having a top surface and a bottom surface, at least one semiconductor light emitting device disposed on the top surface of the light-transmissive substrate, a reflective part disposed over the semiconductor light emitting device to reflect light from the semiconductor light emitting device toward the light-transmissive substrate, and a first wavelength converter disposed between the light-transmissive substrate and the reflective part.Type: GrantFiled: February 6, 2017Date of Patent: December 25, 2018Assignee: Seoul Semiconductor Co., Ltd.Inventor: Hyuck Jung Choi
-
Patent number: 10164404Abstract: According to an embodiment, a crystalline color-conversion device includes an electrically driven first light emitter, for example a blue or ultraviolet LED, for emitting light having a first energy in response to an electrical signal. An inorganic solid single-crystal direct-bandgap second light emitter having a bandgap of a second energy less than the first energy is provided in association with the first light emitter. The second light emitter is electrically isolated from, located in optical association with, and physically connected to the first light emitter so that in response to the electrical signal the first light emitter emits first light that is absorbed by the second light emitter and the second light emitter emits second light having a lower energy than the first energy.Type: GrantFiled: October 16, 2017Date of Patent: December 25, 2018Assignee: X-Celeprint LimitedInventors: Christopher Bower, Matthew Meitl, Ronald S. Cok
-
Patent number: 10164152Abstract: A light emitting diode (LED) chip has an inclined notch. The inclined notch has at least one inclined surface. The LED chip includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, a light emitting layer, a first electrode, and a second electrode. The light emitting layer is located between the first-type doped semiconductor layer and the second-type doped semiconductor layer. The inclined surface is inclined with respect to the light emitting layer. The first electrode is electrically connected to the first-type doped semiconductor layer. The second electrode is electrically connected to the second-type doped semiconductor layer. The inclined notch is disposed in the light emitting layer.Type: GrantFiled: February 3, 2017Date of Patent: December 25, 2018Assignee: PlayNitride Inc.Inventors: Tzu-Yang Lin, Yu-Hung Lai, Yun-Li Li, Yu-Yun Lo
-
Patent number: 10156335Abstract: A light-emitting device comprises a semiconductor structure comprising a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, a first intermediate layer, a second intermediate layer, and an active region capable of emitting radiation, wherein the active region is between the first intermediate layer and the second intermediate layer, the first intermediate layer is in direct contact with the first conductivity-type semiconductor layer, the second intermediate layer is in direct contact with the second conductivity-type semiconductor layer, and the active region comprises alternated well layers and barrier layers, wherein each barrier layer has a thickness; wherein a first difference between a refractive index of the first intermediate layer and a refractive index of the first conductivity-type semiconductor layer is less than a second difference between a refractive index of the second intermediate layer and a refractive index of the second conductivity-type semiconductType: GrantFiled: August 1, 2017Date of Patent: December 18, 2018Assignee: EPISTAR CORPORATIONInventors: Jun-Yi Li, Chun-Yu Lin, Shih-Chang Lee, Yi-Ming Chen
-
Patent number: 10137277Abstract: Methods and apparatus for providing circadian-friendly LED light sources are disclosed. A light source is formed to include a first LED emission (e.g., one or more LEDs emitting a first spectrum) and a second LED emission (e.g., one or more LEDs emitting a second spectrum) wherein the first and second LED emissions are combined in a first ratio and in a second ratio such that while changing from the first ratio to the second ratio the relative circadian stimulation is varied while maintaining a color rendering index above 80.Type: GrantFiled: July 10, 2018Date of Patent: November 27, 2018Assignee: Soraa, Inc.Inventors: Michael R. Krames, Aurielen J. F. David
-
Patent number: 10134821Abstract: A thin film transistor (TFT) substrate having reduced differences in heights in areas thereof so as to facilitate subsequent processing is disclosed. In one aspect, the TFT substrate includes a substrate having a first area in which a TFT is not disposed and a second area in which a TFT is disposed, a height adjustment layer disposed on the substrate in an area corresponding to at least a part of the first area. The TFT substrate also includes a TFT disposed on the substrate in an area corresponding to the second area.Type: GrantFiled: December 20, 2013Date of Patent: November 20, 2018Assignee: SAMSUNG DISPLAY CO., LTD.Inventor: Dong-Won Lee
-
Patent number: 10128389Abstract: An ultraviolet light sensor and method of manufacturing thereof are disclosed. The ultraviolet light sensor includes Group-III Nitride layers adjacent to a silicon wafer with one of the layers at least partially exposed such that a surface thereof can receive UV light to be detected. The Group-III Nitride layers include a p-type layer and an n-type layer, with p/n junctions therebetween forming at least one diode. Conductive contacts are arranged to conduct electrical current through the sensor as a function of ultraviolet light received at the outer Group-III Nitride layer. The Group-III Nitride layers may be formed from, e.g., GaN, InGaN, AlGaN, or InAlN. The sensor may include a buffer layer between one of the Group-III Nitride layers and the silicon wafer. By utilizing silicon as the substrate on which the UV sensor diode is formed, a UV sensor can be produced that is small, efficient, cost-effective, and compatible with other semiconductor circuits and processes.Type: GrantFiled: September 28, 2017Date of Patent: November 13, 2018Assignee: ROSESTREET LABS, LLCInventors: Robert Forcier, Wladyslaw Walukiewicz
-
Patent number: 10128410Abstract: A light emitting device includes a substrate, multiple n-type layers, and multiple p-type layers. The n-type layers and the p-type layers each include a group III nitride alloy. At least one of the n-type layers is a compositionally graded n-type group III nitride, and at least one of the p-type layers is a compositionally graded p-type group III nitride. A first ohmic contact for injecting current is formed on the substrate, and a second ohmic contact is formed on a surface of at least one of the p-type layers. Utilizing the disclosed structure and methods, a device capable of emitting light over a wide spectrum may be made without the use of phosphor materials.Type: GrantFiled: March 10, 2016Date of Patent: November 13, 2018Assignee: ROSESTREET LABS ENERGY, INC.Inventors: Wladyslaw Walukiewicz, Iulian Gherasoiu, Lothar Reichertz
-
Patent number: 10125947Abstract: Provided is a board. The board may include: a plurality of body portions; and a connecting portion disposed between the plurality of body portions to integrally connect the plurality of body portions, wherein a shape of the connecting portion is changed between a flat shape and a protruding shape, when positions of the plurality of body portions are changed by rotating the plurality of body portions based on the connecting portion.Type: GrantFiled: April 12, 2016Date of Patent: November 13, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jin Kwan Song, Hyo Yeon Kim
-
Patent number: 10121987Abstract: An organic light emitting diode display including a first substrate; a first electrode on the first substrate; an organic light emitting layer on the first electrode; a second electrode on the organic light emitting layer; and a capping layer on the second electrode, wherein the capping layer includes at least one heterocyclic compound, the heterocyclic compound including a carbazole group and a heterocyclic group bonded with the carbazole group.Type: GrantFiled: September 14, 2015Date of Patent: November 6, 2018Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Hwan-Hee Cho, Myeong-Suk Kim, Sung-Wook Kim
-
Patent number: 10114257Abstract: A conducting film or device multilayer electrode includes a substrate and two transparent or semitransparent conductive layers separated by a transparent or semitransparent intervening layer. The intervening layer includes electrically conductive pathways between the first and second conductive layers to help reduce interfacial reflections occurring between particular layers in devices incorporating the conducting film or electrode.Type: GrantFiled: January 5, 2017Date of Patent: October 30, 2018Assignee: 3M INNOVATIVE PROPERTIES COMPANYInventors: Fred B. McCormick, Sergey Lamansky, Leslie A. Todero, Manoj Nirmal
-
Patent number: 10115915Abstract: A method for forming an organic thin film transistor is provided. An interdigital electrode layer is located on a surface of the insulating substrate. An organic semiconductor layer is formed on a surface of the interdigital electrode layer. An insulating layer is located to cover the organic semiconductor layer. A gate electrode is formed on the insulating layer. A method for forming the organic semiconductor layer is provided. An evaporating source is provided, and the evaporating source and the interdigital electrode layer are spaced from each other. The carbon nanotube film structure is heated to gasify an organic semiconductor material to form the organic semiconductor layer on an interdigital electrode layer surface.Type: GrantFiled: August 28, 2017Date of Patent: October 30, 2018Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.Inventors: Hao-Ming Wei, Yang Wei, Kai-Li Jiang, Shou-Shan Fan
-
Patent number: 10109474Abstract: A method for fabricating handling wafer includes providing a substrate, having a front side and a back side. The front side of the substrate is disposed on a supporting pin. A first oxide layer is formed surrounding the substrate. A portion of the first oxide layer is removed to expose the front side of the substrate. An alignment mark is formed on the front side of the substrate.Type: GrantFiled: May 23, 2017Date of Patent: October 23, 2018Assignee: United Microelectronics Corp.Inventors: Wei-Jin Wang, Zhi-Biao Zhou
-
Patent number: 10109767Abstract: A light emitting diode includes: an n-type nitride semiconductor layer; an active layer over the n-type nitride semiconductor layer; and a p-type nitride semiconductor layer over the active layer. The n-type nitride semiconductor layer includes: an n-type nitride layer; a first intermediate layer over the n-type nitride layer; an n-type modulation-doped layer over the first intermediate layer. The light emitting diodes includes a second intermediate layer over the n-type modulation-doped layer. The second intermediate layer includes a sub-layer having a higher n-type doping concentration that an n-type doping concentration of the n-type modulation-doped layer.Type: GrantFiled: January 16, 2015Date of Patent: October 23, 2018Assignee: Seoul Viosys Co., Ltd.Inventors: Kyung Hae Kim, Jung Whan Jung
-
Patent number: 10096646Abstract: To provide a light-emitting unit having a semiconductor light-emitting device with a good responsiveness and a sufficient light emission quantity. The light-emitting unit comprises a plurality of semiconductor light-emitting devices, an n-wiring electrode and a p-wiring electrode respectively connecting the semiconductor light-emitting devices in parallel, an n-pad electrode connected to the n-wiring electrode, and a p-pad electrode connected to the p-wiring electrode. At least one of the Group III nitride semiconductor light-emitting devices has a light emission volume of 1 ?m3 to 14 ?m3.Type: GrantFiled: September 9, 2016Date of Patent: October 9, 2018Assignee: TOYODA GOSEI CO., LTD.Inventors: Misato Boyama, Shingo Totani, Takashi Kawai, Yoshiki Saito, Naoyuki Okita
-
Patent number: 10090435Abstract: A semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region is grown over a porous III-nitride region. A III-nitride layer comprising InN is disposed between the light emitting layer and the porous III-nitride region. Since the III-nitride layer comprising InN is grown on the porous region, the III-nitride layer comprising InN may be at least partially relaxed, i.e. the III-nitride layer comprising InN may have an in-plane lattice constant larger than an in-plane lattice constant of a conventional GaN layer grown on sapphire.Type: GrantFiled: June 1, 2016Date of Patent: October 2, 2018Assignee: LUMILEDS LLCInventors: Jonathan J. Wierer, John E. Epler
-
Patent number: 10084286Abstract: A surface emitting laser for emitting light with a wavelength ? includes a first reflection mirror provided on a semiconductor substrate; a resonator region including an active layer provided on the first reflection mirror; a second reflection mirror, including plural low refraction index layers and plural high refraction index layers, provided on the resonator region; a contact layer provided on the second reflection mirror; a third reflection mirror provided on the contact layer; and an electric current narrowing layer provided between the active layer and the second reflection mirror or in the second reflection mirror. Optical lengths of at least one of thicknesses of the low refraction index layers and the high refraction index layers formed between the electric current narrowing layer and the contact layer are (2N+1)×?/4 (N=1, 2, . . . ).Type: GrantFiled: February 24, 2015Date of Patent: September 25, 2018Assignee: RICOH COMPANY, LTD.Inventors: Ryoichiro Suzuki, Shunichi Sato
-
Patent number: 10079296Abstract: A semiconductor device includes an indium gallium nitride layer over an active layer. The semiconductor device further includes an annealed region beneath the indium gallium nitride layer, the annealed region comprising indium atoms driven from the indium gallium nitride layer into the active layer.Type: GrantFiled: June 6, 2016Date of Patent: September 18, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chen-Hao Chiang, Po-Chun Liu, Chi-Ming Chen, Min-Chang Ching, Chung-Yi Yu, Chia-Shiung Tsai, Ru-Liang Lee
-
Patent number: 10077400Abstract: A method of making a colloidal suspension of photoluminescent porous silicon particles involves removing a layer of porous silicon from a substrate using a first ultrasound energy to form a first plurality of porous silicon particles in a colloidal suspension. The first plurality of porous silicon particles in the colloidal suspension are exposed to a second ultrasound energy to reduce the size of the first plurality of porous silicon particles in the colloidal suspension, thereby forming a second plurality of porous silicon particles in a colloidal suspension, wherein the second plurality of porous silicon particles are in the amorphous phase.Type: GrantFiled: April 25, 2013Date of Patent: September 18, 2018Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY (KAUST)Inventors: Sahraoui Chaieb, Asad Mughal
-
Patent number: 10069003Abstract: When a channel formation region is formed of GaN in a MOSFET, there are cases where the actual threshold voltage (Vth) is lower than the setting value thereof and the actual carrier mobility (?) during the ON state is lower than the setting value thereof. The reason for threshold voltage (Vth) and the carrier mobility (?) being lower than the setting values is unknown. A MOSFET including a gallium nitride substrate, an epitaxial layer made of gallium nitride provided on top of the gallium nitride substrate, a gate insulating film provided in direct contact with the epitaxial layer, and a gate electrode provided in contact with the gate insulating film. The gallium nitride substrate has a dislocation density less than or equal to 1E+6 cm?2, and the epitaxial layer has a region with a p-type impurity concentration less than or equal to 5E+17 cm?3.Type: GrantFiled: November 30, 2016Date of Patent: September 4, 2018Assignee: FUJI ELECTRIC CO., LTD.Inventor: Katsunori Ueno
-
Patent number: 10069043Abstract: Some embodiments of the disclosure provide an LED light emitting device for a display device, and a display device, relate to the field of display technologies. The LED light emitting device includes a quantum dot film, a reflective filter layer, and at least one LED lamp, wherein the quantum dot film is arranged between the at least one LED lamp and the reflective filter layer; the at least one LED lamp is configured to emit light to excite a quantum dot material encapsulated in the quantum dot film to generate white backlight; and the reflective filter layer is configured to reflect light in a preset band and to transmit light outside the preset band, wherein the light in the preset band is light in a part of a band of the light emitted by the at least one LED lamp.Type: GrantFiled: June 26, 2015Date of Patent: September 4, 2018Assignees: Hisense Electric Co., Ltd., Hisense USA Corporation, Hisense International Co., Ltd.Inventors: Fulin Li, Zhicheng Song, Kun Shao
-
Patent number: 10062809Abstract: Disclosed are a light emitting device package, a backlight unit, and a lighting device which are usable for a display or lighting, and a method of manufacturing the light emitting device package. The light emitting device package includes: a substrate; a light emitting device seated on the substrate; a reflecting member provided on the substrate and provided with a reflector cup surrounding a lateral circumference of the light emitting device; a transparent encapsulant charged in the reflector cup of the reflecting member in a flow state and hardened, and provided with a concave phosphor accommodating space in an upper surface thereof; and a phosphor charged in the phosphor accommodating space in a flow state and hardened.Type: GrantFiled: July 22, 2017Date of Patent: August 28, 2018Assignee: LUMENS CO., LTD.Inventors: Seunghyun Oh, Seunghoon Lee, Yungeon Cho, Kangmin Han
-
Patent number: 10054497Abstract: A metal nitride material for a thermistor consists of a metal nitride represented by the general formula: MxAly(N1-wOw)z (where “M” represents at least one of Fe, Co, Mn, Cu, and Ni, 0.70?y/(x+y)?0.98, 0.45?z?0.55, 0<w?0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. A method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using an M-Al alloy sputtering target (where “M” represents at least one of Fe, Co, Mn, Cu, and Ni).Type: GrantFiled: July 24, 2014Date of Patent: August 21, 2018Assignee: MITSUBISHI MATERIALS CORPORATIONInventors: Toshiaki Fujita, Hiroshi Tanaka, Noriaki Nagatomo
-
Patent number: 10047289Abstract: Provided is a liquid crystal display device including first and second opposing substrates, a liquid crystal layer containing a liquid crystal composition between the first and second substrates, a plurality of gate lines and data lines arranged in a matrix on the first substrate, thin-film transistors disposed at intersections of the gate lines and the data lines, and pixel electrodes that are driven by the transistors and that are made of a transparent conductive material. Each thin-film transistor includes a gate electrode, an oxide semiconductor layer disposed over the gate electrode with an insulating layer therebetween, and source and drain electrodes electrically connected to the oxide semiconductor layer. The liquid crystal composition contains at least one compound selected from the group consisting of compounds represented by general formulas (LC1) and (LC2) and at least one compound selected from the group consisting of compounds represented by general formulas (II-a) to (II-f).Type: GrantFiled: November 4, 2014Date of Patent: August 14, 2018Assignee: DIC CORPORATIONInventors: Shinji Ogawa, Yoshinori Iwashita
-
Patent number: 10050415Abstract: Method and devices for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, Al GaN, and AlInGaN, are provided. The laser devices include multiple laser emitters integrated onto a substrate (in a module), which emit green or blue laser radiation.Type: GrantFiled: July 7, 2017Date of Patent: August 14, 2018Assignee: Soraa Laser Diode, Inc.Inventors: James W. Raring, Paul Rudy, Chendong Bai
-
Patent number: 10043958Abstract: A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.Type: GrantFiled: January 10, 2017Date of Patent: August 7, 2018Assignee: OSRAM Opto Semiconductors GmbHInventors: Korbinian Perzlmaier, Kai Gehrke, Robert Walter, Karl Engl, Guido Weiss, Markus Maute, Stefanie Rammelsberger
-
Patent number: 10043948Abstract: Provided is a light emitting device capable of reducing light attenuation within the element and having high light extraction efficiency, and a method of manufacturing the light emitting device. The light emitting device has a light emitting element having a light transmissive member and semiconductor stacked layer portion, electrodes disposed on the semiconductor stacked layer portion in this order. The light emitting element has a first region and a second region from the light transmissive member side. The light transmissive member has a third region and a fourth region from the light emitting element side. The first region has an irregular atomic arrangement compared with the second region. The third region has an irregular atomic arrangement compared with the fourth region. The first region and the third region are directly bonded.Type: GrantFiled: October 21, 2016Date of Patent: August 7, 2018Assignee: NICHIA CORPORATIONInventor: Masatsugu Ichikawa
-
Patent number: 10038306Abstract: A nitride semiconductor device includes a GaN substrate in which an angle between a principal surface and an m-plane of GaN is ?5° or more and +5° or less, a first intermediate layer disposed on the principal surface of the substrate and made of AlzGa(1?z)N, 0?z?1, and a second intermediate layer disposed on a principal surface of the first intermediate layer, having an Al content different from that of the first intermediate layer, and made of Alx1Iny1Ga(1?x1?y1)N, 0?x1?1, 0?y1?1. A quantum cascade laser includes the nitride semiconductor device.Type: GrantFiled: December 14, 2016Date of Patent: July 31, 2018Assignees: Sharp Kabushiki Kaisha, THE UNIVERSITY OF TOKYOInventors: Teruhisa Kotani, Yasuhiko Arakawa
-
Patent number: 10038071Abstract: A semiconductor device according to the present invention includes: a semiconductor layer including a first conductivity type semiconductor region and a second conductivity type semiconductor region joined to the first conductivity type semiconductor region; and a surface electrode connected to the second conductivity type region on one surface of the semiconductor layer, including a first Al-based electrode, a second Al-based electrode, an Al-based oxide film interposed between the first Al-based electrode and the second Al-based electrode, and a plated layer on the second Al-based electrode.Type: GrantFiled: January 19, 2017Date of Patent: July 31, 2018Assignees: ROHM CO., LTD., LAPIS SEMICONDUCTOR CO., LTD.Inventors: Akihiro Hikasa, Kazusuke Kato
-
Patent number: 10038302Abstract: A semiconductor device includes an n-type ohmic contact layer, cathode and anode electrodes, p-type and n-type modulation doped quantum well (QW) structures, and first and second ion implant regions. The anode electrode is formed on the first ion implant region that contacts the p-type modulation doped QW structure and the cathode electrode is formed by patterning the first and second ion implant regions and the n-type ohmic contact layer. The semiconductor device is configured to operate as at least one of a diode laser and a diode detector. As the diode laser, the semiconductor device emits photons. As the diode detector, the semiconductor device receives an input optical light and generates a photocurrent.Type: GrantFiled: March 6, 2017Date of Patent: July 31, 2018Assignees: THE UNIVERSITY OF CONNECTICUT, Opel Solar, Inc.Inventor: Geoff W. Taylor
-
Patent number: 10032959Abstract: A light emitting device can include a GaN layer having a multilayer structure that can include an n-type layer, an active layer, and a p-type layer, the GaN layer having a first surface and a second surface; a conductive structure on the first surface of the GaN layer, the conductive structure includes a first electrode in contact with the first surface of the GaN layer, the first electrode is configured to reflect light from the active layer back through the second surface of the GaN layer; and a metal layer including Au, in which the metal layer serves as a first pad; a second electrode on the second surface of the GaN layer; and a second pad on the second electrode, in which a thickness of the second pad is about 0.5 ?m or higher.Type: GrantFiled: March 6, 2017Date of Patent: July 24, 2018Assignee: LG INNOTEK CO., LTD.Inventor: Myung Cheol Yoo
-
Patent number: 10026881Abstract: Embodiments of the invention include a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A metal busbar is disposed on the semiconductor structure. A first portion of the metal busbar is in direct contact with the semiconductor structure. A reflector is disposed between a second portion of the metal busbar and the semiconductor structure. A current blocking structure prevents current from being injected in the light emitting layer in a region below the first portion.Type: GrantFiled: April 5, 2016Date of Patent: July 17, 2018Assignee: Koninklijke Philips N.V.Inventor: Toni Lopez
-
Patent number: 10020419Abstract: A four-element light emitting diode with a transparent substrate, comprising a AlGaInP light emitting diode (LED) epitaxial wafer, and the surface of a GaP layer of the AlGaInP-LED epitaxial wafer is roughened into a bonding surface, a film is plated on the bonding surface and is bonded with a transparent substrate, and finally a GaAs substrate is removed. The transparent bonding disclosed herein can replace the GaAs substrate made of light absorption materials with the transparent substrate by substrate transfer technology, increasing the light emitting efficiency of the light emitting diode chip and avoiding extremely low external quantum efficiency caused due to the limitations of the material of conventional AlGaInP light emitting diode and the substrate; in addition, with the support of the cut path pre-etching technology, back melting or splashing during the epitaxial layer cutting process is avoided, light emitting efficiency is increased and electric leakage risk is eliminated.Type: GrantFiled: January 18, 2017Date of Patent: July 10, 2018Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Kunhuang Cai, Shu-fan Yang, Chun-Yi Wu
-
Patent number: 10017691Abstract: A wet process using an organic solvent is used to produce an organic EL element, which has high light emission efficiency, a long light emission life and a small color change when continuously driven, an illuminating device and a display device are provided. Especially, an organic EL element which emits white light and can be manufactured at low cost is provided.Type: GrantFiled: July 9, 2015Date of Patent: July 10, 2018Assignee: KONICA MINOLTA, INC.Inventors: Shinya Otsu, Masato Nishizeki, Eisaku Katoh, Tomohiro Oshiyama, Dai Ikemizu
-
Patent number: 10020428Abstract: The present invention relates to a white light emitting device having high color rendering, and the white light emitting device is a white light emitting lamp comprising a blue LED chip having an excitation wavelength of 440-460 nm, and a phosphor layer covering a light emitting surface of the blue LED chip and excited by the excitation wavelength of the blue LED chip so as to emit light, wherein the phosphor layer comprises a first phosphor having an emission peak wavelength of 480-499 nm; a second phosphor having an emission peak wavelength of 500-560 nm; and a third phosphor having an emission peak wavelength of 600-650 nm. According to aspects of the present invention, a white LED chip having high color rendering can be provided, and particularly, the white light emitting device having high color rendering for specific colors such as R9 and R12 can be provided.Type: GrantFiled: August 18, 2014Date of Patent: July 10, 2018Assignee: GLBTECH CO., LTD.Inventor: Han Do Kim
-
Patent number: 10008616Abstract: The electronic device having a Schottky diode includes first and second electrodes disposed on a semiconductor substrate and spaced apart from each other. A first semiconductor region is formed within the semiconductor substrate. The first semiconductor region may include a first surface portion in contact with the second electrode, forming a Schottky diode with the second electrode. A second semiconductor region having the same conductivity-type as the first semiconductor region and overlapping the first electrode is formed within the semiconductor substrate. A third semiconductor region having a different conductivity-type from the first semiconductor region, and having a first portion and a second portion spaced apart from each other, is formed within the semiconductor substrate. An isolation region is disposed between the second and the third semiconductor regions. The isolation region includes a first isolation portion and a second isolation portion spaced apart from each other.Type: GrantFiled: March 22, 2017Date of Patent: June 26, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yong Don Kim, Seo In Pak
-
Patent number: 10006147Abstract: There is provided a gallium nitride substrate having a C plane as a surface with a diameter of not less than 100 mm, the gallium nitride substrate including first regions and second regions having different average values of band-edge emission intensities in a micro photoluminescence mapping at 25° C. in a square region located in the C plane and having sides each having a length of 2 mm, an average value Ibe1a of the band-edge emission intensities of the first regions and an average value Ibe2a of the band-edge emission intensities of the second regions satisfying the following relational expressions (I) and (II): Ibe1a>Ibe2a??(I) and 2.1?Ibe1a/Ibe2a?9.4??(II).Type: GrantFiled: April 16, 2015Date of Patent: June 26, 2018Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Makoto Kiyama, Ryu Hirota, Seiji Nakahata
-
Patent number: 10008636Abstract: A light-emitting device is provided. comprises: a light-emitting stack comprising an active layer emitting a first light having a first peak wavelength ? nm; and an adjusting element stacked on and electrically connected to the active layer, wherein the adjusting element comprises a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; wherein a forward voltage of the light-emitting device is between (1240/0.8?) volt and (1240/0.5?) volt, and a ratio of the intensity of the first light emitted from the active layer at the first peak wavelength to the intensity of the second light emitted from the diode at the second peak wavelength is greater than 10 and not greater than 1000.Type: GrantFiled: October 27, 2017Date of Patent: June 26, 2018Assignee: EPISTAR CORPORATIONInventors: Chih-Chiang Lu, Yi-Chieh Lin, Rong-Ren Lee, Yu-Ren Peng, Ming-Siang Huang, Ming-Ta Chin, Yi-Ching Lee
-
Patent number: 10008649Abstract: A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.Type: GrantFiled: January 10, 2017Date of Patent: June 26, 2018Assignee: OSRAM Opto Semiconductors GmbHInventors: Korbinian Perzlmaier, Kai Gehrke, Robert Walter, Karl Engl, Guido Weiss, Markus Maute, Stefanie Rammelsberger
-
Patent number: 10002853Abstract: A semiconductor package includes a substrate, and a first semiconductor chip stack disposed on the substrate. The first semiconductor chip stack includes a plurality of first semiconductor chips. The first semiconductor chips are stacked in a staircase configuration along a first direction. A first support is disposed on the substrate. The first support is spaced apart from the first semiconductor chip stack. A second semiconductor chip stack is disposed on the first semiconductor chip stack and the first support. The second semiconductor chip stack includes a plurality of second semiconductor chips. The second semiconductor chips are stacked in a second staircase configuration along a second direction opposite the first direction. A height of the first semiconductor chip stack is substantially equal to a height of the first support.Type: GrantFiled: February 3, 2017Date of Patent: June 19, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventor: Joo Young Oh
-
Patent number: 9995440Abstract: A solid-state linear lamp comprises a co-extruded component, the co-extruded component comprising multiple photoluminescence portions corresponding to different color temperatures, a diffuser portion, and a top portion, where the photoluminescence portion, the diffuser portion, and the top portion are integrally formed into the co-extruded component.Type: GrantFiled: December 8, 2015Date of Patent: June 12, 2018Assignee: Intematix CorporationInventor: Charles Edwards
-
Patent number: 9997682Abstract: A light emitting element unit according to the present invention includes a semiconductor light emitting element that has a surface, a back surface, and a side surface, where the surface or the back surface is a light extracting surface from which light generated inside is emitted, a submount which has a bottom wall and a side wall, has a recess portion defined by the bottom wall and the side wall, and supports the semiconductor light emitting element by the bottom wall in a position in which the light extracting surface is directed upward at the recess portion, and has an inclined surface on the side wall, inclined at a predetermined angle with respect to the bottom wall so as to face the side surface of the semiconductor light emitting element, and a light reflecting film formed on the inclined surface of the submount.Type: GrantFiled: June 4, 2015Date of Patent: June 12, 2018Assignee: ROHM CO., LTD.Inventors: Takao Fujimori, Yasuo Nakanishi, Nobuaki Matsui, Hirotaka Obuchi
-
Patent number: 9991225Abstract: A high-voltage transistor (HVT) structure adapts a low-voltage transistor (LVT) to high-voltage environments. The HVT structure includes a drain node, a source node, a control gate, and a field electrode. The drain node and the source node define a conductive channel, in which mobilized charges are regulated by the control gate. While being isolated from the control gate, the field electrode is configured to spread the mobilized charges in response to a field voltage. The field electrode is structured and routed to prevent charge sharing with any one of the drain node, source node, or control gate. Advantageously, the isolated field electrode minimizes the capacitance of the control gate as well as the drain and source nodes, such that the HVT can switch with less power loss and a more robust performance in a high-voltage environment.Type: GrantFiled: June 23, 2015Date of Patent: June 5, 2018Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Sandeep R. Bahl, Michael D. Seeman
-
Patent number: 9991419Abstract: A device according to embodiments of the invention includes a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A surface of the p-type region perpendicular to a growth direction of the semiconductor structure includes a first portion and a second portion. The first portion is less conductive than the second portion. The device further includes a p-contact formed on the p-type region. The p-contact includes a reflector and a blocking material. The blocking material is disposed over the first portion and no blocking material is disposed over the second portion.Type: GrantFiled: October 10, 2016Date of Patent: June 5, 2018Assignee: LUMILEDS LLCInventor: Kwong-Hin Henry Choy
-
Patent number: 9985173Abstract: The present application provides nitride semiconductor nanoparticles, for example nanocrystals, made from a new composition of matter in the form of a novel compound semiconductor family of the type group II-III-N, for example ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN and ZnAlGaInN. This type of compound semiconductor nanocrystal is not previously known in the prior art. The invention also discloses II-N semiconductor nanocrystals, for example ZnN nanocrystals, which are a subgroup of the group II-III-N semiconductor nanocrystals. The composition and size of the new and novel II-III-N compound semiconductor nanocrystals can be controlled in order to tailor their band-gap and light emission properties. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated.Type: GrantFiled: September 16, 2014Date of Patent: May 29, 2018Assignee: Sharp Kabushiki KaishaInventors: Peter Neil Taylor, Jonathan Heffernan, Stewart Edward Hooper, Tim Michael Smeeton