Abstract: A backside Vertical Cavity Surface Emitting Laser (VCSEL) has a substrate. A first mirror device is formed on the substrate. An active region is formed on the first mirror device. A second mirror device is formed on the active region. A pillar is formed by directional Inductive Coupled Plasma-Reactive Ion Etcher (ICP-RIE). The pillar exposes a portion of the first mirror device, the active region and the second mirror device. A first metal contact is formed over a top section of the pillar. A second metal contact is formed on the substrate. An opening formed in the second metal contact and aligned with the pillar.

Abstract: A photodetection device includes a pixel matrix in which each pixel includes a barrier photodetector. The pixel matrix includes an absorption layer, a barrier layer, a contact layer, and at least one separation element to delimit the pixels. At least one separation element extends above the contact layer, and forms at least one depletion zone that extends locally in the contact layer, to block the lateral circulation of charge carriers.

Abstract: A resonant cavity-enhanced infrared photodetector has an absorber layer disposed between a first transparent layer and a second transparent layer within an optical cavity. The first transparent layer and the second transparent layer have a bandgap which is larger by at least 0.1 eV compared to the absorber layer. Since the bandgaps of the first and second layer are increased relative to the bandgap of the absorber layer, generation of dark current is limited to the absorber layer. The band profiles of the layers had been designed in order to avoid carrier trapping. In one embodiment, the conduction and valence band offsets are configured to allow unimpeded flow of photogenerated charge carriers away from the absorber layer. The photodetector may be a photoconductor, or a photodiode having n-type and p-type layers. In some embodiments, an interface between the absorber layer and a transparent layer is compositionally graded.

Abstract: A quantum-dot based avalanche photodiode (QD-APD) may include a silicon substrate and a waveguide on which a quantum dot (QD) stack of layers is formed having a QD light absorption layer, a charge multiplication layer (CML), and spacer layers. The QD stack may be formed within a p-n junction. The waveguide may include a mode converter to facilitate optical coupling and light transfer from the waveguide to the QD light absorption layer. The QD absorption layer and the CML layer may be combined or separate layers. The CML may generate electrical current from the absorbed light with more than 100% quantum efficiency when the p-n junction is reverse-biased.

Abstract: Disclosed is a method of manufacturing a compound semiconductor solar cell according to an embodiment of the invention. The method of manufacturing the compound semiconductor solar cell according to the embodiment of the invention includes forming a plurality of compound semiconductor layers of at least two elements and including a base layer and an emitter layer, the base layer including a first conductivity type dopant to have a first conductivity type and the emitter layer including a second conductivity type dopant to have a second conductivity type. The forming of the plurality of compound semiconductor layers includes at least one of a process-temperature change period and a growth-rate change period.

Abstract: Some embodiments of the present disclosure provide an optical sensor. The optical sensor includes a semiconductive block having a front side and a back side, a wave guide region, and a light sensing region. The wave guide region is positioned over the back side of the semiconductive block and having a core layer. The wave guide region is configured to guide an incident light. The light sensing region is positioned in the semiconductive block, having a multi-junction photodiode. The light sensing region is configured to sense emission lights from the wave guide region.

Abstract: Provided is a manufacturing method of a semiconductor device including a vertical MOSFET having a planar gate. The manufacturing method of a semiconductor device includes forming a n-type gallium nitride layer on a gallium nitride monocrystalline substrate, and forming an impurity-implanted region that contains impurities at a uniform concentration in a direction parallel to a main surface of the gallium nitride monocrystalline substrate, by ion-implanting the impurities into the n-type gallium nitride layer, where the impurities include at least one type selected from among magnesium, beryllium, calcium and zinc. Here, at least part of the impurity-implanted region serves as a channel forming region of the vertical MOSFET.

Abstract: In order to improve the characteristics of a semiconductor device including: a channel layer and a barrier layer formed above a substrate; and a gate electrode arranged over the barrier layer via a gate insulating film, the semiconductor device is configured as follows. A silicon nitride film is provided over the barrier layer between a source electrode and the gate electrode, and is also provided over the barrier layer between a drain electrode and the gate electrode GE. The surface potential of the barrier layer is reduced by the silicon nitride film, thereby allowing two-dimensional electron gas to be formed. Thus, by selectively forming two-dimensional electron gas only in a region where the silicon nitride film is formed, a normally-off operation can be performed even if a trench gate structure is not adopted.

Abstract: A method of manufacturing a photodiode including a useful layer made of a semi-conductor alloy. The useful layer has a band gap value which decreases from its upper face to its lower face. A step of producing a first doped region forming a PN junction with a second doped region of the useful layer, said production of a first doped region including a first doping step, so as to produce a base portion; and a second doping step, so as to produce at least one protuberance protruding from the base portion and in the direction of the lower face.

Abstract: Methods and structures for providing single-color or multi-color photo-detectors leveraging cavity resonance for performance benefits. In one example, a radiation detector (110) includes a semiconductor absorber layer (210, 410A, 410B, 610, 810, 1010, 1030, 1210, 1230) having a first electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region, a semiconductor collector layer (220, 630, 830, 1020, 1040) coupled to the absorber layer (210, 410A, 41013, 610, 810, 1010, 1030, 1210, 1230) and having a second electrical conductivity type, and a resonant cavity coupled to the collector layer (220, 630, 830, 1020, 1040) and having a first mirror (240) and a second mirror (245).

Abstract: An image pickup device includes a light-receiving device unit, a processing portion, a first connection body, and a second connection body. The first connection body electrically connects a first electrode of the light-receiving device unit to a corresponding second electrode of the processing portion. The first connection body includes an indium-containing solder portion disposed between the first electrode and the second electrode, and a barrier layer for suppressing alloying of the solder portion with the first electrode and the second electrode. The second connection body includes an alloy portion formed by alloying with a solder containing a material having a melting point equal to or higher than a melting point of the first connection body and a hardness higher than that of the first connection body.

Abstract: Using a highly doped Cap layer of the same composition as the Contact material in an nBn or pBp infrared photodetector allows engineering of the energy band diagram to facilitate minority carrier current flow in the contact region and block minority current flow outside the Contact region. The heavily doped Cap layer is disposed on the Barrier between the Contacts but electrically isolated from the Contact material.

Abstract: A device includes a first semiconductor layer, and a second semiconductor layer over the first semiconductor layer. The first semiconductor layer and the second semiconductor layer comprise different materials. A semiconductor region is overlying and contacting the second semiconductor layer, wherein a bottom surface of the semiconductor region contacts a first top surface of the second semiconductor layer. The semiconductor region and the second semiconductor layer comprise different material. The bottom surface of the semiconductor region has a slanted portion contacting a (551) surface plane of the second semiconductor layer.

Abstract: The disclosure relates to a fin field effect transistor (FinFET). An exemplary FinFET comprises a substrate comprising a major surface; a fin structure protruding from the major surface comprising a lower portion comprising a first semiconductor material having a first lattice constant; an upper portion comprising the first semiconductor material having the first lattice constant; a middle portion between the lower portion and upper portion, wherein the middle portion comprises a second semiconductor material having a second lattice constant different from the first lattice constant; and a pair of notches extending into opposite sides of the middle portion; and an isolation structure surrounding the fin structure, wherein a top surface of the isolation structure is higher than a top surface of the pair of notches.

Abstract: A device including at least one heterostructure p/n diode, including a substrate based on HgCdTe including for each diode: a first part having a first cadmium concentration; a concentrated part, having a second cadmium concentration, greater than the first concentration, forming a heterostructure with the first part; a p+ doped zone situated in the concentrated part and extending into the first part, forming a p/n junction with an n-doped position of the first part, or a base plate; and the concentrated part is only located in the p+ doped zone and forms a substantially constant cadmium concentration well.

Abstract: A low noise infrared photodetector has an epitaxial heterostructure that includes a photodiode and a transistor. The photodiode includes a high sensitivity narrow bandgap photodetector layer of first conductivity type, and a collection well of second conductivity type in contact with the photodetector layer. The transistor includes the collection well, a transfer well of second conductivity type that is spaced from the collection well and the photodetector layer, and a region of first conductivity type between the collection and transfer wells.

Abstract: A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate including a surface region. A first electrode layer is formed overlying the surface region. A copper layer is formed overlying the first electrode layer and an indium layer overlying the copper layer to form a multi-layered structure. The method subjects at least the multi-layered structure to a thermal treatment process in an environment containing a sulfur bearing species and form a copper indium disulfide material. The copper indium disulfide material includes a thickness of substantially copper sulfide material. The thickness of the copper sulfide material is removed to expose a surface region having a copper poor surface characterized by a copper to indium atomic ratio of less than about 0.95:1. The method subjects the copper poor surface to a metal cation species to convert the copper poor surface from an n-type semiconductor characteristic to a p-type semiconductor characteristic.

Abstract: Disclosed are minority carrier based mercury-cadmium telluride (HgCdTe) infrared detectors and arrays, and methods of making, are disclosed. The constructions provided by the invention enable the detectors to be used at higher temperatures, and/or be implemented on less expensive semiconductor substrates to lower manufacturing costs. An exemplary embodiment a substrate, a bottom contact layer disposed on the substrate, a first mercury-cadmium telluride layer having a first bandgap energy value disposed on the bottom contact layer, a second mercury-cadmium telluride layer having a second bandgap energy value that is greater than the first bandgap energy value disposed on the first mercury-cadmium telluride layer, and a collector layer disposed on the second mercury-cadmium telluride layer, wherein the first and second mercury-cadmium telluride layers are each doped with an n-type dopant.

Abstract: A unit cell for use in an imaging system may include an absorber layer of semiconductor material formed on a semiconductor substrate, at least one contact including semiconductor material formed on the semiconductor substrate and electrically coupled to the absorber layer, and a cap layer of semiconductor material formed on the semiconductor substrate and electrically coupled to and formed between the absorber layer and the at least one contact. The absorber layer may be configured to absorb incident photons such that the absorbed photons excite electrons in the absorber layer to generate a photocurrent. The at least one contact may be configured to conduct the photocurrent to one or more electrical components external to the unit cell. The cap layer may be configured to conduct the photocurrent between the absorber layer and the at least one contact.

Abstract: Semiconductor structures include a trench formed proximate a substrate including a first semiconductor material. A crystalline material including a second semiconductor material lattice mismatched to the first semiconductor material is formed in the trench. Process embodiments include removing a portion of the dielectric layer to expose a side portion of the crystalline material and defining a gate thereover. Defects are reduced by using an aspect ratio trapping approach.

Abstract: An array structure solves issues that exist in conventional compound semiconductor photodiode arrays, such as large cross talk, large surface leaks, large stray capacitance, narrow detection wavelength bands, and bad manufacturing yield, simultaneously. A photodiode array has, laminated upon a semiconductor substrate, a buffer layer (8) with a broad forbidden band width, an I-type (low concentration photosensitive layer (2) with a narrow forbidden band width, and an n-type semiconductor window layer (3) with a broad forbidden band width, wherein photodiode elements are electrically separated from adjacent elements, by doping the periphery of the p-type impurity, and the detection wavelength band is expanded, by making the n-type window layer (3) on the photosensitive layer (2) a thinner layer with crystal growth.

Abstract: Provided is a CdTe-based semiconductor substrate for epitaxial growth, which is capable of growing good-quality epitaxial crystals without urging a substrate user to implement etching treatment before the epitaxial growth. A CdTe-based semiconductor substrate, in which tracks of linear polishing damage with a depth of 1 nm or more are not observed within a viewing range of 10 ?m×10 ?m when a surface of the substrate is observed by an atomic force microscope, and orange peel defects are not observed when the surface of the substrate is visually observed under a fluorescent lamp, can grow the good-quality epitaxial crystals.

Abstract: A barrier-type photo-detector is provided with a Barrier between first and second layers. One of the layers is delineated into pixels without fully removing the non-pixel portions of the delineated layer. Delineation may be accomplished through material modification techniques such as ion damage, selective doping, ion induced disordering or layer material growth. Some variations may employ partial material removal techniques.

Abstract: A dichromatic photodiode and method for dichromatic photodetection are disclosed. A wide bandgap junction comprises a lattice matched junction operable to detect a first light spectrum. A narrow bandgap junction is coupled to the wide bandgap junction, and comprises a photodiode structure. The narrow bandgap junction is operable to detect a second light spectrum.

Abstract: Provided is a biological component detection device with which a biological component can be detected at high sensitivity by using an InP-based photodiode in which a dark current is reduced without using a cooling mechanism and the sensitivity is extended to a wavelength of 1.8 ?m or more. An absorption layer 3 has a multiple quantum well structure composed of group III-V semiconductors, a pn-junction 15 is formed by selectively diffusing an impurity element in the absorption layer, and the concentration of the impurity element in the absorption layer is 5×1016/cm3 or less, the diffusion concentration distribution control layer has an n-type impurity concentration of 2×1015/cm3 or less before the diffusion, the diffusion concentration distribution control layer having a portion adjacent to the absorption layer, the portion having a low impurity concentration.

Abstract: A GaN-based field effect transistor (MOSFET) is comprised of a channel layer comprised of p-type GaN, an electron supply layer, a surface layer having band gap energy smaller than that of the electron supply layer, sequentially laminated on a substrate, and recess section is formed by removing a part of the drift layer, the electron supply layer, and the surface layer down to a depth that reaches to the channel layer. A source electrode and a drain electrode are formed so that the recess section positions between them, a gate insulation film is formed on the surface layer and on inner-surface of the recess section including the channel layer, and a gate electrode is formed on the gate insulating film in the recess section.

Abstract: An array structure solves issues that exist in conventional compound semiconductor photodiode arrays, such as large cross talk, large surface leaks, large stray capacitance, narrow detection wavelength bands, and bad manufacturing yield, simultaneously. A photodiode array has, laminated upon a semiconductor substrate, a buffer layer (8) with a broad forbidden band width, an I-type (low concentration photosensitive layer (2) with a narrow forbidden band width, and an n-type semiconductor window layer (3) with a broad forbidden band width, wherein photodiode elements are electrically separated from adjacent elements, by doping the periphery of the p-type impurity, and the detection wavelength band is expanded, by making the n-type window layer (3) on the photosensitive layer (2) a thinner layer with crystal growth.

Abstract: Disclosed are minority carrier based mercury-cadmium telluride (HgCdTe) infrared detectors and arrays, and methods of making, are disclosed. The constructions provided by the invention enable the detectors to be used at higher temperatures, and/or be implemented on less expensive semiconductor substrates to lower manufacturing costs. An exemplary embodiment a substrate, a bottom contact layer disposed on the substrate, a first mercury-cadmium telluride layer having a first bandgap energy value disposed on the bottom contact layer, a second mercury-cadmium telluride layer having a second bandgap energy value that is greater than the first bandgap energy value disposed on the first mercury-cadmium telluride layer, and a collector layer disposed on the second mercury-cadmium telluride layer, wherein the first and second mercury-cadmium telluride layers are each doped with an n-type dopant.

Abstract: A photodetector is disclosed for the detection of near-infrared light with a wavelength in the range of about 0.9-1.7 microns. The photodetector, which can be formed as either an nBp device or a pBn device on an InP substrate, includes an InGaAs light-absorbing layer, an InAlGaAs graded layer, an InAlAs or InP barrier layer, and an InGaAs contact layer. The photodetector can detect near-infrared light with or without the use of an applied reverse-bias voltage and is useful as an individual photodetector, or to form a focal plane array.

Abstract: The present invention is directed to a semiconductor device that includes at least one p-n junction including a p-type material, an n-type material, and a depletion region. The at least one p-n junction is configured to generate bulk photocurrent in response to incident light. The at least one p-n junction is characterized by a conduction band energy level, a valence band energy level and a surface Fermi energy level. The surface Fermi energy level is pinned either near or above the conduction band energy level or near or below the valence band energy level. A unipolar barrier structure is disposed in a predetermined region within the at least one p-n junction.

Abstract: A semiconductor device is provided that includes a substrate, a first active layer disposed over the substrate, and a second active layer disposed on the first active layer. The second active layer has a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer. A termination layer, which is disposed on the second active layer, includes InGaN. Source, gate and drain contacts are disposed on the termination layer.

Abstract: A photodiode in which a pn junction is formed between the doped region (DG) formed in the surface of a crystalline semiconductor substrate and a semiconductor layer (HS) deposited above said doped region. An additional doping (GD) is provided in the edge region of the doped zone, by means of which additional doping the pn junction is shifted deeper into the substrate (SU). With the greater distance of the pn junction from defects at phase boundaries that is achieved in this way, the dark current within the photodiode is reduced.

Abstract: The present invention provides a two-terminal infrared detector capable of detecting a plurality of bands, such as three bands, over the visible and short-wave infrared bands. Detection of three colors enables one to construct composite imagery that provide significantly added contract in comparison to typical grayscale images. In some variations, the device includes multiple absorber and barrier layers that consist of distinct engineered semiconductor alloys which are closely lattice matched to InP.

Abstract: The invention relates to a method for producing an infrared radiation sensor, said sensor comprising an infrared photodiode array formed in a first material and a reading circuit formed in a second material, said method comprising the steps of: sticking, through molecular adhesion, a first material side surface onto an optically transparent crystalline material side surface having infrared radiation and a coefficient of thermal expansion similar to that of the second material, give or take 20%; thinning the body of the first material side surface so that the latter is less that 25 ?m; producing infrared-sensitive photodiodes onto the thus-thinned first material side surface; depositing contact ball bearings onto the infrared photodiodes; and mounting the reading circuit onto the first material side surface through flip chip technology.

Abstract: A photo-detector comprising: a photo absorbing layer comprising an n-doped semiconductor exhibiting a valence band energy level; a barrier layer, a first side of the barrier layer adjacent a first side of the photo absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the doped semiconductor of the photo absorbing layer; and a contact area comprising a doped semiconductor, the contact area being adjacent a second side of the barrier layer opposing the first side, the barrier layer exhibiting a thickness and a conductance band gap sufficient to prevent tunneling of majority carriers from the photo absorbing layer to the contact area and block the flow of thermalized majority carriers from the photo absorbing layer to the contact area. Alternatively, a p-doped semiconductor is utilized, and conductance band energy levels of the barrier and photo absorbing layers are equalized.

Abstract: The present invention provides a top emission type organic light-emitting display device in a production of which it is possible to prevent the organic film from being oxidized when the upper transparent electrode is formed, and which is capable of emitting light at a low voltage. This organic light-emitting display device contains an organic light-emitting layer and an upper electrode and a lower electrode sandwiching the organic light-emitting layer, and is of a structure in which the emitted light is taken out from the upper electrode side, and a buffer layer mainly made of an oxide producing less oxygen by decomposition in the film-forming process than the upper electrode material is provided between the organic light-emitting layer and the upper electrode.

Abstract: A semiconductor device is provided that includes a substrate, a first active layer disposed over the substrate, and a second active layer disposed on the first active layer. The second active layer has a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer. A termination layer, which is disposed on the second active layer, includes InGaN. Source, gate and drain contacts are disposed on the termination layer.

Abstract: A barrier-type photo-detector is provided with a Barrier between first and second layers. One of the layers is delineated into pixels without fully removing the non-pixel portions of the delineated layer. Delineation may be accomplished through material modification techniques such as ion damage, selective doping, ion induced disordering or layer material growth. Some variations may employ partial material removal techniques.

Abstract: The invention relates to a photo-detector with a reduced G-R noise, which comprises a sequence of a p-type contact layer, a middle barrier layer and an n-type photon absorbing layer, wherein the middle barrier layer has an energy bandgap significantly greater than that of the photon absorbing layer, and there is no layer with a narrower energy bandgap than that in the photon-absorbing layer.

Abstract: This invention relates to the manufacture of Cadmium Mercury Telluride (CMT) on patterned silicon, especially to growth of CMT on silicon substrates bearing integrated circuitry. The method of the invention involves growing CMT in selected growth windows on the silicon substrate by first growing one or more buffer layers by MBE and then growing the CMT by MOVPE. The growth windows may be defined by masking the area outside of the growth windows. Growth within the growth windows is crystalline whereas any growth outside the growth windows is polycrystalline and can be removed by etching. The invention offers a method of growing CMT structures directly on integrated circuits removing the need for hybridisation.

Abstract: The present invention changes layer polarities of an epitaxy structure of an avalanche photodiode into n-i-n-i-p. A transport layer is deposed above an absorption layer to prevent absorbing photon and producing electrons and holes. A major part of electric field is concentrated on a multiplication layer for producing avalanche and a minor part of the electric field is left on the absorption layer for transferring carrier without avalanche. Thus, bandwidth limit from a conflict between RC bandwidth and carrier transferring time is relieved. Meanwhile, active area is enlarged and alignment error is improved without sacrificing component velocity too much.

Abstract: A computer readable medium comprising multiple instructions stored in a computer readable device, upon executing these instructions, a computer performing the following steps: providing a semiconductor layout and a circuit pattern; setting a forbidden area of the circuit pattern according to a restriction condition; defining at least a virtual pattern arrangement area on a portion of the semiconductor layout which does not correspond to the forbidden area; and providing a virtual pattern array in the virtual pattern arrangement area.

Abstract: Semiconductor structures include a trench formed proximate a substrate including a first semiconductor material. A crystalline material including a second semiconductor material lattice mismatched to the first semiconductor material is formed in the trench. Process embodiments include removing a portion of the dielectric layer to expose a side portion of the crystalline material and defining a gate thereover. Defects are reduced by using an aspect ratio trapping approach.

Abstract: The present invention is directed to a semiconductor device that includes at least one p-n junction including a p-type material, an n-type material, and a depletion region. The at least one p-n junction is configured to generate bulk photocurrent in response to incident light. The at least one p-n junction is characterized by a conduction band energy level, a valence band energy level and a surface Fermi energy level. The surface Fermi energy level is pinned either near or above the conduction band energy level or near or below the valence band energy level. A unipolar barrier structure is disposed in a predetermined region within the at least one p-n junction.

Abstract: A photodiode designed to capture incident photons includes a stack of at least three superposed layers of semiconductor materials having a first conductivity type. The stack includes: an interaction layer designed to interact with incident photons so as to generate photocarriers; a collection layer to collect the photocarriers; a confinement layer designed to confine the photocarriers in the collection layer. The collection layer has a band gap less than the band gaps of the interaction layer and confinement layer. The photodiode also includes a region which extends transversely relative to the planes of the layers. The region is in contact with the collection layer and confinement layer and has a conductivity type opposite to the first conductivity type so as to form a p-n junction with the stack.

Abstract: The invention relates to a photo-detector with a reduced G-R noise, which comprises a sequence of a p-type contact layer, a middle barrier layer and an n-type photon absorbing layer, wherein the middle barrier layer has an energy bandgap significantly greater than that of the photon absorbing layer, and there is no layer with a narrower energy bandgap than that in the photon-absorbing layer.

Abstract: A damascene approach may be utilized to form an electrode to a lower conductive line in a phase change memory. The phase change memory may be formed of a plurality of isolated memory cells, each including a phase change memory threshold switch and a phase change memory storage element.

Abstract: In a mesa type PIN-PD formed using a heavily doped semiconductor material, a high frequency response is degraded as slow carriers occur in a heavily doped layer when light incident into a light receiving section transmits through an absorbing layer and reaches the heavily doped layer on a side near the substrate. In a p-i-n multilayer structure, a portion corresponding to a light receiving section of a heavily doped layer on a side near a substrate is previously made thinner than the periphery of the light receiving section by an etching or selective growth technique, over which an absorbing layer and another heavily doped layer are grown to form the light receiving section of mesa structure. This makes it possible to form a good ohmic contact and to realize a PIN-PD with excellent high frequency response characteristics.

Abstract: Ball Grid Array packages having decreased adhesion of the BGA pad to the laminate surface and methods for producing same are provided.

Abstract: There is provided an image pickup device which picks up an image of an object by absorbing light in a near infrared region reflected from the object and which has semiconductor photodetectors including an absorption layer of a bandgap wavelength in the range of 1.65 to 3.0 ?m.