Abstract: A solid state image sensor is constructed such that a plurality of linear image sensors are provided to have at least one row of photodiodes in each of the plurality of linear image sensors and a photodiode array is formed by arranging the plurality of linear image sensors side by side. A control gate electrode used to retrieve electric charges and a polysilicon electrode serving as a charge transfer electrode are provided between the pluraliielding conductive film is provided on the polysilicon electrode to partition the plurality of linear image sensors into individual linear image sensors. Accordingly, a light beam incident on a certain linear image sensor can be prevented from entering another linear image sensor adjacent to the certain linear image sensor, thereby reducing a difference between the amounts of signal charges outputted from different linear image sensors and suppressing smear.

Abstract: An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Abstract: In the case where a material containing an alkaline metal or an alkaline-earth metal in a cathode, an anode, a buffer layer, or an organic compound layer is used, there is a fear of the diffusion of an impurity ion (representatively, alkaline metal ion or alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. As the insulating films 117, 317 and 417 provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion but also aggressively absorbing an impurity ion, for example, a silicon nitride film containing a large amount of fluorine, a silicon oxynitride film containing a large amount of fluorine or an organic resin film containing a particle having an antimony (Sb) compound, a tin (Sn) compound, or an indium (In) compound is used.

Abstract: An infrared image sensor has a sensor array composed of plural sensor elements and provided on a silicon substrate. A temperature compensation element is provided on the silicon substrate for each sensor element adjacently to the sensor element, and performs temperature correction to an output of the sensor element. Accordingly, the infrared image sensor can provide stable output even when environmental temperature varies.

Abstract: There is provided a radiation image pick-up device with a large size, in which detection efficiency, light utilization efficiency, and a yield can be improved, high speed operation can be realized, and a signal to noise ratio is improved. The radiation image pick-up device includes a phosphor for converting radiations into light, a semiconductor layer for converting the radiations into charges and converting the light from the phosphor into charges, TFTs for reading signals corresponding to stored charges, and output lines for outputting the charges read by the TFTs. The semiconductor layer, charge storage capacitors, the TFTs, and the output lines are formed respectively on an insulating substrate. The phosphor is laminated on the semiconductor layer and the semiconductor layer is laminated on a formation surface of the charge storage capacitors, the TFTs, and the output lines respectively on the insulating substrate.

Abstract: An integrated circuit is provided that includes a substrate incorporating a semiconductor photodiode device having a p-n junction. The photodiode device includes at least one capacitive trench buried in the substrate and connected in parallel with the junction. In a preferred embodiment, the substrate is formed from silicon, and the capacitive trench includes an internal doped silicon region partially enveloped by an insulating wall that laterally separates the internal region from the substrate. Also provided is a method for fabricating an integrated circuit including a substrate that incorporates a semiconductor photodiode device having a p-n junction.

Abstract: A charge coupled device includes a plurality of photoelectric conversion regions; a plurality of vertical charge coupled devices (VCCDs) provided between the photoelectric conversion regions for transmission of charges generated at the photoelectric conversion regions in a first direction; and a horizontal charge coupled device (HCCD) coupled to the VCCDs and having a channel region including a plurality of channels for transmission of the charges previously transmitted through the VCCDs in a second direction. The channel region is formed such that one of the plurality of channels has a higher potential than the remaining channels. The remaining channels have potentials that gradually become lower than the highest potential moving in a direction away from the channel with the highest potential. The channel region transmits the charges within the HCCD so that the charges are gathered together centered around the channel having the highest potential during transmission of the charges.

Abstract: Disclosed is a color linear image sensor having a small line-to-line distance, which comprises signal charge storage sections adjacent to light receiving sections. Signal charges are read by signal charge reading sections from the signal charge storage sections to signal charge transfer sections, and thereby residual images are prevented from being generated. Each of the signal charge reading sections is electrically connected with a portion of the signal charge transfer section which is adjacent to the signal charge reading section, and driving pulses are made common (&phgr;1 (TG)). Alternatively, each of the signal charge storage sections is electrically connected with a portion of the signal charge transfer section which is not adjacent to the signal charge reading section, and driving pulses are made common ((&phgr;2 (ST)). Accordingly, the number of wiring lines (pulse lines) arranged between the light receiving sections of respective colors is reduced by one.

Abstract: The linear image sensor according to the present invention includes a light receiving a member consisting of at least three light receiving pixel lines 11, 12 and 13; signal charge transfer sections 31, 32, 33, 34, 35 and 36 located on both sides of each of the light receiving pixel lines 11, 12 and 13 of the light receiving a member; and branch transfer sections 33c and 34c which branch from the signal charge transfer sections 33 and 34, which are located on both sides of at least one of the at least three light receiving pixel lines 11, 12 and 13, to extend to reach the signal charge transfer sections 32 and 35 of the adjacent light receiving pixel lines 11 and 13.

Abstract: In an image sensing array, the structure of the image sensor pixel is based on a vertical punch through transistor with a junction gate surrounding its source and connected to it, the junction gate being further surrounded by an MOS gate. The new pixel has a large conversion gain, high dynamic range, blooming protection, and low dark current. It senses charge nondestructively with a complete charge removal, which avoids generation of kTC noise. The pixel fabrication is compatible with CMOS processing that includes two metal layers. The array also includes the pixel reset through column sense lines, polysilicon field plate in the image-sensing area for improved pixel isolation, denser pixel packing, and either n-channel or p-channel addressing transistor.

Abstract: A linear image sensor integrated circuit has a semiconductor substrate having a pixel region and a scribe region adjacent to the pixel region. A diffusion layer is disposed in the pixel region of the semiconductor substrate. A PN junction is formed between the semiconductor substrate and the diffusion layer for receiving light. A passivation film covers the PN junction and is disposed over a surface of the semiconductor substrate except for a portion of the surface thereof in the scribe region.

Abstract: A thin film transistor optical detecting sensor includes an array substrate having a transparent substrate, a plurality of sensor thin film transistors disposed on the transparent substrate, each having a first silicon layer of a first thickness, a plurality of storage capacitors, each connected with a corresponding one of the plurality of sensor thin film transistors, storing charges of an optical current, and a plurality of switch thin film transistors, each having a second silicon layer of a second thickness less than the first thickness.

Abstract: Minority carriers generated by photoelectric conversion in an isolation layer and a semiconductor region with the same conduction type as that of the isolation layer are provided with an effective diffusion length owing to a trench formed in the isolation layer and with no path, which could be a straight escape route for the minority carriers, and false signals, therefore, scarcely enters to a neighboring cell, so that smear and color interference can be suppressed.

Abstract: An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Abstract: A semiconductor light-emitting unit includes: a semiconductor laser diode; a photodetector functioning as a sub-mount for mounting the diode thereon; and a heating member, incorporated with the photodetector, for heating the diode. If the ambient temperature of the diode falls within a range where kinks are possibly caused in the low-temperature I-L characteristic of the diode, then current is supplied to the heating member, thereby heating the diode. The heating member may be either a doped region defined within a semiconductor substrate or a doped polysilicon film formed on the substrate. Also, the heating member is preferably located under the laser diode with a heat-dissipating layer and an insulating layer interposed therebetween. The semiconductor light-emitting unit with this structure can effectively eliminate kinks from the low-temperature I-L characteristic of the semiconductor laser diode.

Abstract: A photodiode that exhibits a photo-induced negative differential resistance region upon biasing and illumination is described. The photodiode includes an N+ silicon substrate, a silicon nitride layer formed on the N+ silicon substrate, a reoxidized nitride layer formed on the silicon nitride layer and a N+ polysilicon layer formed on at least a portion of the reoxidized nitride layer.

Abstract: A monolithic photodetector including a photodiode, a precharge MOS transistor, a control MOS transistor, a read MOS transistor, and a transfer MOS transistor, the photodiode and the transfer transistor being formed in a same substrate of a first conductivity type, the photodiode including a first region of the second conductivity type formed under a second region of the first conductivity type more heavily doped than the first region, and above a third region of the first conductivity type more heavily doped than the substrate, the first region being the source of the second conductivity type of the transfer transistor, the second and third regions being connected to the substrate and being at a fixed voltage.

Abstract: A charge transfer device which comprises vertical charge transfer devices which transfer charges in the vertical direction, first and second horizontal charge transfer devices which transfer the charges from the vertical charge transfer devices in the horizontal direction, and a shift gate which controls the charges from the vertical charge transfer devices to be supplied to one the first horizontal charge device or the second horizontal charge transfer device, wherein the first. horizontal charge transfer device is a semiconductor region between the vertical charge transfer devices and the second horizontal charge transfer device and includes highly-doped regions having tapered portions whose one ends near the second horizontal charge transfer device are broader than another ends near the vertical charge transfer devices.

Abstract: The present invention relates to a CMOS active pixel sensor which includes a compensation circuit capable of compensating a lowered pixel voltage output due to leakage current of a photodiode. The CMOS active pixel sensor having a light sensing unit for generating an output voltage when light is incident thereupon, the sensing unit having an amount of leakage current before the incidence of light. A reset unit resets the output voltage of the light sensing unit to an initial reset voltage in response to a reset signal. A sense transistor has a source, a drain coupled to a power source voltage, and a gate coupled to the output of the light sensing unit. A select transistor has a drain connected to a source of the sense transistor, and provides the voltage of the sense transistor to a bit line, in response to a select signal. A compensation unit supplies a voltage corresponding to the output voltage of the light sensing unit lowered by the leakage current.

Abstract: An infrared detector array includes a plurality of detector pixel structures, each having a plurality of coplanar sections responsive to different bands of infrared radiations. Each section of a pixel structure comprises a plurality of elongate quantum well infrared radiation absorbing photoconductor (QWIP) elements. The group of QWIP elements are spaced such that they comprise a diffraction grating for the received infrared radiation. Top and bottom longitudinal contacts are provided on opposite surfaces of the QWIP elongate elements to provide current flow transverse to the axis of the element to provide the required bias voltage. An infrared radiation reflector is provided to form an optical cavity for receiving infrared radiation. A plurality of detector pixel structures are combined to form a focal plane array. Each pixel structure section produces a signal that is transmitted through a conductive bump to a terminal of a read out integrated circuit.

Abstract: A field effect transistor suited for use as a sensor element or in an acceleration sensor is described. For this purpose, the field effect transistor within a planar substrate has a drain area and a source area, which are separated from each other by a channel region. In addition, a gate electrode is provided which is arranged so as to be substantially self-supporting above the substrate over the channel region. The gate electrode is flexibly supported such that an external force acting upon it which has a component acting parallel to the surface of the substrate causes a deflection of the gate electrode parallel to the surface of the substrate. A method is also described in which, in a first method step, an integrated circuit having a drain area, a source area, and a channel region is manufactured or made available in a CMOS process, and thereafter, in a second method step, the substantially self-supporting gate electrode is produced on the integrated circuit using electroplating additive technology.

Abstract: A high-concentration light-receiving N-layer 32 is formed by ion implantation in a region near a substrate surface, and a low-concentration N-type epitaxial layer 25 is formed by epitaxial growth in a deeper region. The depletion layer of a photodiode is thus expanded to a deep portion of the substrate by the low-concentration N-type region 25, by which a photoelectric conversion effect on incident light of a long wavelength is increased to improve sensitivity. In the above stage, a deepest potential portion is formed on the substrate surface side. Therefore, a depletion voltage can be prevented from rising. Further, an intermediate-concentration N-type epitaxial layer 23 and a high-concentration N-type epitaxial layer 22 are formed in a stack of two layers by epitaxial growth in a region deeper than a region in which a first P-type layer 24, or a barrier region is formed, by which a shutter voltage can be prevented from rising.

Abstract: P-type ion implantation is done in N well 15, so as to form a charge drain control layer 17 and form a photodiode N well 16 and OFD drain 5, the result being that, even if there is variation in the potential of the photodiode N well 16 making up the photodiode, because the variation in the potential of the charge drain control layer 17 is in the same direction as the potential of the photodiode N well 16, so that variation does not occur in the maximum amount of electrical charge that can be accumulated, the result being that there is no variation in the signal in the saturation condition.

Abstract: A solid state image sensor device and a method of fabricating the same are disclosed in the present invention. A solid state image sensor device includes a semiconductor substrate, a well region in the semiconductor substrate, a horizontal charge transmission region in the well region, a plurality of insulating layers in the horizontal charge transmission region, a gate insulating layer on the entire surface including the insulating layers, a plurality of first polygates on the gate insulating layer, the first polygates being separated from each other and overlapping a portion of each insulating layer, a plurality of impurity regions in the horizontal charge transmission region at both sides of each first polygate, an interlayer insulating layer on the entire surface including the first polygates, and a plurality of second polygates on the interlayer insulating layer and overlapped with a portion of each first polygate.

Abstract: An active pixel sensor architecture comprising a semiconductor substrate having a plurality of pixels formed, thereon, incorporating microlens and lightshields into the pixel architecture. Each of the pixels further comprising: a photodetector region upon which incident light will form photoelectrons to be collected as a signal charge; a device for transferring the signal charge from the photodetector region to a charge storage region that is covered by a light shield; a sense node that is an input to an amplifier; the sense node being operatively connected to the signal storage region. The pixel architecture facilitates symmetrical design of pixels which allows for incorporation of light shield and microlens technology into the design.

Abstract: The present invention relates to electro optical devices with a reduced filter thinning on the edge pixels and a method for reducing the thinning of filter layers on the pixels closest to the edge of an electro optical device such as a photosensitive chip, as would be used, for example, in a full-color digital copier or scanner. A semiconductor wafer includes a main surface defining a plurality of chip areas and tab regions separated by grooves, wherein the chip areas include inner photosites, outer photosites and bonding pads. A plurality of dams are deposited over the main surface in the tab regions, and a clear layer is deposited over the main surface exclusive of the bonding pads. Alternatively, a clear layer is deposited over the main surface exclusive of the bonding pads, and a plurality of tabs is then deposited in the tab regions on the main surface.

Abstract: A method of fabricating silicon TFTs (thin-film transistors) is disclosed. The method comprises a crystallization step by laser irradiation effected after the completion of the device structure. First, amorphous silicon TFTs are fabricated. In each of the TFTs, the channel formation region, the source and drain regions are exposed to laser radiation illuminated from above or below the substrate. Then, the laser radiation is illuminated to crystallize and activate the channel formation region, and source and drain regions. After the completion of the device structure, various electrical characteristics of the TFTs are controlled. Also, the amorphous TFTs can be changed into polysilicon TFTs.

Abstract: An image sensor (10) has an image sensing element that includes an N-type conducting region (26) and a P-type pinned layer (37). The two regions form two P-N junctions at different depths that increase the efficiency of charge carrier collection at different frequencies of light. The conducting region (26) is formed by an angle implant that ensures that a portion of the conducting region (26) can function as a source of an MOS transistor (32).

Abstract: An embodiment of the invention is directed to a semiconductor photodiode made of a number of gate islands being spaced from each other and electrically insulated from each other by spacers. The spacers are formed above a p-n junction of the photodiode. The incident light is detected after it passes through the spacers and into a photosensitive region of the photodiode. The photodiode can be built using conventional metal oxide semiconductor (MOS) processes of the polysilicon-silicided gate or self-aligned types that use a lower doped drain (LDD) structure, without requiring an additional mask step that prevents the formation of the opaque silicide above the photosensitive semiconductor regions.

Abstract: a pixel is formed in a substrate having a first conductivity type, the pixel being coupled to a register for output. The pixel includes a pixel channel of a second conductivity type formed in the substrate, a transfer gate electrode, a storage gate electrode and a photodiode. The pixel channel includes a transfer portion at a first end of the pixel channel proximal to the register, a diode portion at a second end distal to the register and a storage portion between the transfer portion and the diode portion. The transfer gate electrode is insulatively spaced over the transfer portion, and the storage gate electrode is insulatively spaced over the storage portion. The diode is formed within the diode portion using the storage gate electrode as a mask.

Abstract: A radiation imager is disclosed that is resistant to degradation due to moisture by either contact pad corrosion, guard ring corrosion or by photodiode leakage. A contact pad of a large area imager is disclosed that is formed into three distinct and electrically connected regions. The resulting structure of the contact pad regions forms reliable contact that is resistant to corrosion damage. Also disclosed is a data line of an imager, or a display, the resistance of which is reduced by patterning an aluminum (Al) line on top of a transistor island structure, with the formed data line preferably being encapsulated. In addition, a guard ring having first and second regions and photosensitive element are disclosed. The second region comprises an electrical contact between ITO and underlying metal and a second tier which acts as a moisture barrier and is preferably disposed at the corner of the guard ring and separated from the contact pads of the imager in such a manner as to minimize corrosion.

Abstract: A color linear CCD for a pickup apparatus comprises a photodiode array including a blue-sensing photodiode array formed between a red-sensing photodiode array and a green-sensing photodiode array. A storage area is located beside of the red-sensing photodiode array for storing the signal charges produced by the red-sensing and blue-sensing photodiode arrays. A first HCCD shift register area is located beside of the green-sensing photodiode array for moving the signal charges produced by the green-sensing photodiode array. A second HCCD shift register area is formed beside of the storage area for alternately receiving the signal charges produced by the red-sensing and blue-sensing photodiode arrays. In another embodiment the red-sensing photodiode array is placed between the blue and green sensing photodiode arrays.

Abstract: The present invention intends to improve a difference between signal levels of odd-numbered pixels and even-numbered pixels in a CCD (charge coupled device) linear sensor. In a CCD linear sensor comprising a sensor region (1) having an array of a plurality of sensor elements (pixels) (S.sub.1), (S.sub.2), . . . and first and second horizontal transfer registers (4) and (5) disposed on the respective sides of the sensor region (1) through read-out gate sections (2) and (3) wherein signal charges of every other sensor elements (S.sub.1), (S.sub.3), (S.sub.5), . . . are transferred by the first horizontal transfer register (4) while signal charges of remaining every other sensor elements (S.sub.2), (S.sub.4), (S.sub.6) are transferred by the second horizontal transfer register (5), the first and second horizontal transfer registers (4) and (5) include first and second transfer electrodes (22R.sub.1), (22R.sub.2) to which two-phase drive pulses (.phi.H.sub.1) and (.phi.H.sub.

Abstract: A semiconductor imaging system preferably having an active pixel sensor array compatible with a CMOS fabrication process. Color-filtering elements such as polymer filters and wavelength-converting phosphors can be integrated with the image sensor.

Abstract: An active pixel sensor architecture comprising a semiconductor substrate having a plurality of pixels formed, thereon, incorporating microlens and lightshields into the pixel architecture. Each of the pixels further comprising: a photodetector region upon which incident light will form photoelectrons to be collected as a signal charge; a device for transferring the signal charge from the photodetector region to a charge storage region that is covered by a light shield; a sense node that is an input to an amplifier; the sense node being operatively connected to the signal storage region. The pixel architecture facilitates symmetrical design of pixels which allows for incorporation of light shield and microlens technology into the design.

Abstract: A charge coupled device includes a substrate, a photoelectric conversion region, a hole accumulation region, a vertical charge coupled region, and a buried transmission gate region. The substrate includes a surface with a light receiving region and a charge transmission region. The photoelectric conversion region is provided in a substrate beneath the light receiving and charge transmission regions, and the photoelectric conversion region generates a photoelectric signal responsive to light received at the light receiving region of the substrate surface. The hole accumulation region is provided in the substrate between the photoelectric conversion region and the light receiving region of the substrate surface. The vertical charge coupled region is provided in the substrate between the photoelectric conversion region and the charge transmission region of the substrate surface. The buried transmission gate region is provided between the vertical charge coupled region and the photoelectric conversion region.

Abstract: It is an object of the present invention to provide a solid-state image sensing device with a vertical shutter structure allowing the size of the solid-state image sensing device with ease. An electric-charge exhausting unit is provided on the same side of a sensor array comprising a plurality of sensor units arranged to form a straight line as an electric-charge transferring unit wherein the electric-charge exhausting unit comprising an electric-charge exhaust drain having a shape resembling an island and an electric-charge exhausting gate with a bent shape surrounding the electric-charge exhaust drain is provided in such a way that the electric-charge exhausting unit is in contact with a first region of a read gate, and only one electric-charge exhausting unit is provided for each pair of sensor units adjacent to each other.

Abstract: A color active pixel sensor cell is formed by utilizing four photodiodes which are each covered with a layer of oxide. The thicknesses of the layers of oxide are set so that a first layer of oxide prohibits red light from entering the first photodiode, a second layer of oxide prohibits green light from entering the second photodiode, a third layer of oxide prohibits blue light from entering the third photodiode, and a fourth layer of oxide allows visible light to enter the fourth photodiode. The amount of red light received by the cell is then determined by subtracting the light energy collected by the first photodiode from the light energy collected by the fourth photodiode. Similarly, the amount of green and blue light received by the cell is determined by subtracting the light energy collected by the second and third photodiodes, respectively, from the amount of light energy collected by the fourth photodiode.

Abstract: An image sensor. The image sensor array includes a substrate. An interconnect structure is formed adjacent to the substrate. A plurality of image sensors are formed adjacent to the interconnect structure. Each image sensor includes a pixel electrode, and a separate I-layer section formed adjacent to the pixel electrode. The image sensor array further includes an insulating material between each image sensor. A transparent electrode is formed over the image sensors. An inner surface of the transparent electrode is electrically connected to an outer surface of the image sensors and the interconnect.

Abstract: A linear CCD (charge-coupled device) including: a photodiode-array having a plurality of photodiodes for converting incident light plural charges, respectively; and a charge transfer part for transferring the charges of the photodiodes during a first phase of a first and second clock signal and for moving the charges during a second phase of the first and second clock signals. The charge transfer part includes: plural first shift electrodes connected to the photodiodes, respectively, for forming potential wells that receive charges from the photodiodes, respectively, during the first phase of the first and second clock signals; and plural second shift electrodes located between the first shift electrodes, respectively, for forming potential wells that receive the charges from the potential wells of the first shift electrodes during the second phase of the first and second clock signals. No shift gates are needed between charge outlets of the photodiodes and the first shift electrodes.

Abstract: A method of forming a contact for a photosensitive element of a photosensitive imager including a common electrode separated from a bottom contact by intervening layers of an SiOx transistor passivation layer over the bottom contact and an SiNx diode passivation layer over the transistor passivation layer. Controlled etching through the passivation layers exposes but does not damage the thin film transistor passivation layer extending in regions beyond the common electrode, and also improves adherence of a protective gasket in such regions. The contact pad formed in this process has a layer of diode passivation material and a layer of transistor passivation material disposed between the upper common electrode material layer and the underlying source and drain electrode material layer, with a via provided having smooth and sloped sidewalls over which the common electrode material extends to provide electrical contact between the common electrode material layer and the source and drain electrode material layer.

Abstract: An electrostatic recording head includes a plurality of elongated head chips fixed on a head base in a linear alignment along their longitudinal direction. The head chip has a dielectric layer, a plurality of line electrodes provided on one surface of the dielectric layer and extending at predetermined intervals in the longitudinal direction, and a plurality of finger electrodes provided on one surface of the dielectric layer and arranged to cross the line electrodes to together form a matrix. A control electrode or electrodes are provided to face the finger electrodes through an insulator layer. The finger electrodes extend parallel to an end face of the head chip.

Abstract: A color linear charge coupled device for an image pickup apparatus includes red, green, and blue photo diode arrays. First, second, third and fourth transfer gates formed in the device move signal charges generated at the photo diode arrays toward first, second and third horizontal charge coupled device (HCCD) shift registers. By controlling the transfer gates, the red and green signal charges are first transferred to their HCCD shift registers. The blue signal charge is then transferred to its HCCD shift register. Only three HCCD shift registers are required, thus, the device dimension and configuration is considerably simplified compared to prior art configurations. Also, the color resolution of the device is greatly improved because the distance between the respective photo diode arrays is substantially decreased.

Abstract: It is an object of the present invention to provide a solid-state image sensing device with a vertical shutter structure allowing the size of the solid-state image sensing device with ease.An electric-charge exhausting unit is provided on the same side of a sensor array comprising a plurality of sensor units arranged to form a straight line as an electric-charge transferring unit wherein the electric-charge exhausting unit comprising an electric-charge exhaust drain having a shape resembling an island and an electric-charge exhausting gate with a bent shape surrounding the electric-charge exhaust drain is provided in such a way that the electric-charge exhausting unit is in contact with a first region of a read gate, and only one electric-charge exhausting unit is provided for each pair of sensor units adjacent to each other.

Abstract: In order to eliminate film thickness nonuniformity of filters and to attain a cost reduction by simultaneously performing planarizing processes of a scribe region and a photoelectric conversion portion, in a color solid-state image pickup device which is separated into a plurality of color solid-state image pickup chips each of which consists of a photoelectric conversion portion and a peripheral circuit portion thereof formed on a semiconductor substrate, a portion of a scribe region for separating the structure on the semiconductor substrate into the color solid-state image pickup chips has a layer structure having the same layers as the photoelectric conversion portion. This invention is also applied to a chip array type color solid-state image pickup device which is constituted by arranging, on a semiconductor substrate, a plurality of color solid-state image pickup chips, each having an array of a plurality of photoelectric conversion portions.

Abstract: A linear solid state imaging device including a substrate (21), a first well (22) of a predetermined junction depth, a second well (23) of a deeper junction than the first well (22), a trapezoid type photodiode area (24) linearly arranged in the first well (22) in which except for one side of the parallel sides of the trapezoid area, the other sides are surrounded by a channel stop area (31), a pair of HCCD areas (25) in the second well in areas of both sides of the photodiode (24) and connected to the output amplifier, a shift gate (28) formed in the substrate between the areas for the photodiode (24) and the HCCD and for transferring the accumulated charges in the photodiode area to the HCCD area, a shift gate channel area (26) formed, in the first well underneath the shift gate (28) and having a six-sided shape one side of which is in contact with the photodiode area (24), another side of which has a V-shaped depression and the other sides are surrounded by a channel stop area (31), a potential barrier for

Abstract: The present invention is directed to methods and apparatus for accurately detecting light energy of a signal of interest (e.g., a laser pulse) even when the signal-to-noise ratio is relatively low. The present invention is further directed to accurate detection of a signal of interest even when either or both the signal of interest and background illumination vary across plural pixels of an imaging an array. For example, a signal of interest can be accurately detected even in the presence of pixel response non-uniformity and fixed pattern noise, or when the incident signal of interest is not confined laterally to a single pixel.

Abstract: In a hard-copy scanner in which a set of photosensitive silicon chips are abutted to form a single page-width array of photosensors, the photosites at the critical ends of each chip are specially shaped to ensure an even spacing of all photosites along the array, taking into account imprecisions in the dimensions of individual chips. The special shape of the end photosite is trapezoidal or a variation of trapezoidal.

Abstract: A solid-state imaging device capable of removing undesired influences, includes a semiconductor substrate having one of conductive types, a well layer arranged on the substrate and having the other conductive type opposite to the substrate, photo-sensitive pixels recessed in a matrix having a predetermined number and having the conductive type opposite to the well layer to generate signal charges corresponding to an incident light amount, a transfer channel formed along one direction of the photosensitive pixels arranged by the conductive type as the same as that of the substrate to transfer the signal charges generated by the photosensitive pixels, an electrode provided to the transfer channel on a side opposite to the substrate to supply an electric field to the transfer channel, and a barrier well formed of the impurity semiconductor material of the conductive type opposite to the conductive type of the semiconductor substrate in the manner that an impurity density of the well layer becomes longer along th

Abstract: A charge transfer device of two-line read structure is formed with a first charge transfer path for transferring first-group charges, a second charge transfer path for transferring second-group charges, and a transfer gate portion (106). To complete the transfer operation of all the second-group charges outputted at a time, the transfer operation of the charges from the first transfer path to the second charge transfer path by the transfer gate portion is divided into a plurality of times. In addition, the second-group charges outputted at time are transferred for each divided set of pixels in each divided transfer operation.