Signal Applied To Field Effect Electrode Patents (Class 257/236)
  • Patent number: 5235197
    Abstract: A wide dynamic range photodetector comprising a photosensitive region for generating signal electrons in response to being illuminated, a collection region for storing the signal electrons generated within the photosensitive region, a shift register for receiving and outputing the signal electrons from the collection region, and a transfer gate intermediate the photosensitive region and the collection region for alternately facilitating transfer of the signal electrons from the photosensitive region for storage in the collection region, and isolating the photosensitive region from the collection region while the signal electrons are being output via the shift register.
    Type: Grant
    Filed: June 25, 1991
    Date of Patent: August 10, 1993
    Assignee: Dalsa, Inc.
    Inventors: Savvas G. Chamberlain, William D. Washkurak
  • Patent number: 5227650
    Abstract: The present invention is to provide a CCD delay line in which a deterioration of a charge transfer efficiency can be reduced by maintaining a charge amount treated in a charge transfer section provided at the rear stage of an intermediate output section. According to an aspect of the present invention, in a charge transfer device having charge transfer sections of a plurality of stages consisting of electrode pairs of a transfer gate electrode and a storage gate electrode and at least one intermediate output section provided at the rear stage of a charge transfer section of a predetermined stage from the signal input side, a cross-sectional area of at least one of the transfer gate electrode and the storage gate electrode in the charge transfer section provided at the rear stage of the intermediate output section is selected to be larger than that in the charge transfer section provided at the front stage of the intermediate output section.
    Type: Grant
    Filed: January 23, 1992
    Date of Patent: July 13, 1993
    Assignee: Sony Corporation
    Inventors: Katsunori Noguchi, Maki Sato, Tadakuni Narabu, Yasuhito Maki
  • Patent number: 5225695
    Abstract: A solid-state imaging device of the invention is provided with a CCD-structured branching unit which selects one signal charge sensor having characteristics suitable for the conditions of use from among a plurality of signal charge sensors each having different characteristics and forms a signal charge transmission path leading from the horizontal CCD to the selected signal charge sensor. As a result, there is no need to switch over the external circuit of the solid-state imaging device according to the conditions of use, which makes it possible to hold down the cost and reduce the size of the external size.
    Type: Grant
    Filed: February 7, 1992
    Date of Patent: July 6, 1993
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Shunichi Naka, Takashi Watanabe
  • Patent number: 5225798
    Abstract: A transversal filter comprises an acoustic charge transport device comprising an input contact for introducing a signal into a buried channel through which the signal is transported by a high frequency acoustic wave and a plurality of non-destructive sense electrodes overlying the channel for successively sampling the signal. A memory device is provided for storing a plurality of tap weight signals, with each tap weight signal for being associated with one of the electrodes. A multiplier system is operably connected with each of the electrodes and with the storage device for generating the product of the signal sampled at each electrode and the associated tap weight signal. A summer is operably associated with the multiplier for summing the products and thereby generating an output signal.
    Type: Grant
    Filed: May 31, 1991
    Date of Patent: July 6, 1993
    Assignee: Electronic Decisions Incorporated
    Inventors: Billy J. Hunsinger, James E. Bales
  • Patent number: 5175602
    Abstract: There is provided a pseudo bi-phase CCD having improved transmission efficiency that is easy for high-integration and can be designed by a simple process. The pseudo bi-phase CCD of the present invention has a gate electrode width which is reduced in a direction opposite to charge transmission direction in a gate electrode. In a charge coupled device having a plurality of gate electrodes formed on a semiconductor through which charges are transferred, the gate electrodes being separated by an insulation film, each of the gate electrodes includes a first part having a first width and a second width which is wider than the first width, the first width gradually increasing as it moves towards the second width formed in a direction of the charge transfer and a second part coupled to the first part, disposed in the charge transfer direction, the second part having the same width as the second width.
    Type: Grant
    Filed: February 11, 1991
    Date of Patent: December 29, 1992
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Jeong-Hyun Nam