Abstract: An electronic device is for detecting and monitoring a local parameter within a solid structure. The electronic device may include an integrated detection module having a functional IC including an integrated sensor to detect the local parameter within the solid structure, and an antenna and having a functional circuitry surface facing towards an outside of the functional IC, and a passivation layer to cover at least the functional circuitry surface of the functional IC so that the functional IC is hermetically sealed and galvanically insulated from a surrounding environment. The electronic device may also include an RF circuit to be coupled with the integrated detection module and having a remote antenna configured to transmit/receive signals for telecommunications and energy exchange with the antenna. The antenna, the RF circuit, and the remote antenna may wirelessly communicate via an electromagnetic coupling.

Abstract: The present invention discloses a capacitive in cell touch panel and display device, wherein touch sensing electrodes are provided on a color filter substrate, the whole common electrode layer of the TFT array substrate is segmented into a plurality of strip-shaped structures functioning as touch driving electrodes, and the touch driving electrodes are driven in a time-sharing manner to achieve the touch function and the display function in a time-sharing manner. Since in the touch panel according to the present invention, structure of the common electrode layer of the TFT array substrate is altered to form the touch driving electrodes, it is not necessary to add a new film on the existing TFT array substrate and only an additional process needs to be added to segment the whole common electrode layer into a plurality of strip-shaped structures, reducing the production cost and increasing the production efficiency.

Abstract: A microelectronic component includes a semiconductor substrate having a top side and a reverse side, an elastically movable mass device on the top side of the substrate, at least one source region provided in or on the mass device, at least one drain region provided in or on the mass device, and a gate region suspended on a conductor track arrangement above the at least one source region and at least one drain region and spaced apart from the mass device by a gap. The conductor track arrangement is anchored on the top side of the substrate in a periphery of the mass device such that the gate region remains fixed when the mass device has been moved.

Abstract: The RF MEMS crosspoint switch comprising a first transmission line and a second transmission line that crosses the first transmission line; the first transmission line comprises two spaced-apart transmission line portions, and a switch element that permanently electrically connects the two spaced-apart transmission line portions; the second transmission line crosses the first transmission line between the two spaced-apart transmission line portions; the RF MEMS crosspoint switch further comprises actuation means for actuating the switch element at least between a first position, in which the switch element is electrically connecting the two spaced-apart transmission line portions of the first transmission line and the first and second transmission lines are electrically disconnected, and a second position, in which the switch element is electrically connecting the two spaced-apart transmission line portions of the first transmission line and is also electrically connecting the two transmission lines together.

Abstract: The present invention relates to a sensor that uses a sensing mechanism having a combined static charge and a field effect transistor, the sensor including: a substrate; source and drain units formed on the substrate and separated from each other; a channel unit interposed between the source and drain units; a membrane separated from the channel unit, disposed on a top portion and displaced in response to an external signal; and a static charge member formed on a bottom surface of the membrane separately from the channel unit and generating an electric field.

Abstract: A micro-electromechanical semiconductor component is provided with a semiconductor substrate, a reversibly deformable bending element made of semiconductor material, and at least one transistor that is sensitive to mechanical stresses. The transistor is designed as an integrated component in the bending element.

Abstract: A MEMS device includes a MEMS substrate with a movable element. Further included is a CMOS substrate with a cavity, the MEMS substrate disposed on top of the CMOS substrate. Additionally, a back cavity is connected to the CMOS substrate, the back cavity being formed at least partially by the cavity in the CMOS substrate and the movable element being acoustically coupled to the back cavity.

Abstract: A micro-electro-mechanical system (MEMS), methods of forming the MEMS and design structures are provided. The method includes forming a coplanar waveguide (CPW) comprising a signal electrode and a pair of electrodes on a substrate. The method includes forming a first sacrificial material over the CPW, and a wiring layer over the first sacrificial material and above the CPW. The method includes forming a second sacrificial material layer over the wiring layer, and forming insulator material about the first sacrificial material and the second sacrificial material. The method includes forming at least one vent hole in the insulator material to expose portions of the second sacrificial material, and removing the first and second sacrificial material through the vent hole to form a cavity structure about the wiring layer and which exposes the signal line and pair of electrodes below the wiring layer. The vent hole is sealed with sealing material.

Abstract: Embodiments of mechanisms for forming a micro-electro mechanical system (MEMS) device are provided. The MEMS device includes a CMOS substrate and a MEMS substrate bonded with the CMOS substrate. The CMOS substrate includes a semiconductor substrate, a first dielectric layer formed over the semiconductor substrate, and a plurality of conductive pads formed in the first dielectric layer. The MEMS substrate includes a semiconductor layer having a movable element and a second dielectric layer formed between the semiconductor layer and the CMOS substrate. The MEMS substrate also includes a closed chamber surrounding the movable element. The MEMS substrate further includes a blocking layer formed between the closed chamber and the first dielectric layer of the CMOS substrate. The blocking layer is configured to block gas, coming from the first dielectric layer, from entering the closed chamber.

Abstract: A structure includes a silicon layer disposed on a buried oxide layer that is disposed on a substrate; at least one transistor device formed on or in the silicon layer, the at least one transistor having metallization; a released region of the silicon layer disposed over a cavity in the buried oxide layer; a back end of line (BEOL) dielectric film stack overlying the silicon layer and the at least one transistor device; a nitride layer overlying the BEOL dielectric film stack; a hard mask formed as a layer of hafnium oxide overlying the nitride layer; and an opening made through the layer of hafnium oxide, the layer of nitride and the BEOL dielectric film stack to expose the released region of the silicon layer disposed over the cavity in the buried oxide layer. The hard mask protects the underlying material during a MEMS/NEMS HF vapor release procedure.

Abstract: A method of forming a semiconductor device is disclosed. Provided is a substrate having at least one MOS device, at least one metal interconnection and at least one MOS device formed on a first surface thereof. A first anisotropic etching process is performed to remove a portion of the substrate from a second surface of the substrate and thereby form a plurality of vias in the substrate, wherein the second surface is opposite to the first surface. A second anisotropic etching process is performed to remove another portion of the substrate from the second surface of the substrate and thereby form a cavity in the substrate, wherein the remaining vias are located below the cavity. An isotropic etching process is performed to the cavity and the remaining vias.

Abstract: The present invention is notably directed to an electromechanical switching device having: two electrodes, including: a first electrode, having layers of a first 2D layered material, which layers exhibit a first surface; and a second electrode, having layers of a second 2D layered material, which layers exhibit a second surface vis-à-vis said first surface; and an actuation mechanism, where: each of the first and second 2D layered materials is electrically conducting; and at least one of said two electrodes is actuatable by the actuation mechanism to modify a distance between the first surface and the second surface, such as to modify an electrical conductivity transverse to each of the first surface and the second surface and thereby enable current modulation between the first electrode and the second electrode.

Abstract: A micromechanical sensor apparatus has a movable gate and a field effect transistor. The field effect transistor has a drain region, a source region, an intermediate channel region with a first doping type, and a movable gate which is separated from the channel region by an intermediate space. The drain region, the source region, and the channel region are arranged in a substrate. A guard region is provided in the substrate at least on the longitudinal sides of the channel region and has a second doping type which is the same as the first doping type and has a higher doping concentration.

Abstract: An integrated MEMS microphone is provided, including, a bonding wafer layer, a bonding layer, an aluminum layer, CMOS substrate layer, an N+ implant doped silicon layer, a field oxide (FOX) layer, a plurality of implant doped silicon areas forming CMOS wells, a two-tier polysilicon layer with selective ion implantation forming a diaphragm, a plurality of implant doped silicon areas forming CMOS source/drain, a gate poly layer forming CMOS transistor gates, said CMOS wells, said CMOS transistor sources/drains and said CMOS gates forming CMOS transistors, an oxide layer embedded with an interconnect contact layer, a plurality of metal layers interleaved with a plurality of via hole layers, a Nitride deposition layer, an under bump metal (UBM) layer and a plurality of solder spheres. Diaphragm is sandwiched between a small top chamber and a small back chamber, and substrate layer includes a large back chamber.

Abstract: An integrated MEMS pressure sensor is provided, including, a CMOS substrate layer, an N+ implant doped silicon layer, a field oxide (FOX) layer, a plurality of implant doped silicon areas forming CMOS wells, a two-tier polysilicon layer with selective ion implantation forming a membrane, including an implant doped polysilicon layer and a non-doped polysilicon layer, a second non-doped polysilicon layer, a plurality of implant doped silicon areas forming CMOS source/drain, a gate poly layer made of polysilicon forming CMOS transistor gates, said CMOS wells, CMOS transistor sources/drains and CMOS gates forming CMOS transistors, an oxide layer embedded with an interconnect contact layer, a plurality of metal layers interleaved with a plurality of via hole layers, a Nitride deposition layer, an under bump metal (UBM) layer and a plurality of solder spheres. N+ implant doped silicon layer and implant doped/un-doped composition polysilicon layer forming a sealed vacuum chamber.

Abstract: A sensor is made up of two substrates which are adhered together. A first substrate includes a pressure-sensitive micro-electrical-mechanical (MEMS) structure and a conductive contact structure that protrudes outwardly beyond a first face of the first substrate. A second substrate includes a complementary metal oxide semiconductor (CMOS) device and a receiving structure made up of sidewalls that meet a conductive surface which is recessed from a first face of the second substrate. A conductive bonding material physically adheres the conductive contact structure to the conductive surface and electrically couples the MEMS structure to the CMOS device.

Abstract: A micro-electromechanical system (MEMS) device includes a housing and a base. The base includes a port opening extending therethrough and the port opening communicates with the external environment. The MEMS die is disposed on the base and over the opening. The MEMS die includes a diaphragm and a back plate and the MEMS die, the base, and the housing form a back volume. At least one vent extends through the MEMS die and not through the diaphragm. The at least one vent communicates with the back volume and the port opening and is configured to allow venting between the back volume and the external environment.

Abstract: A semiconductor substrate of a semiconductor device has a sensor region and an integrated circuit region, and a cavity is formed immediately under a surface layer portion of the sensor region. A capacitive acceleration sensor is formed on the sensor region by working a surface layer portion of the semiconductor substrate opposed to the cavity. The capacitive acceleration sensor includes an interdigital fixed electrode and an interdigital movable electrode. A CMIS transistor is formed on the integrated circuit region. The CMIS transistor includes a P-type well region and an N-type well region formed on the surface layer portion of the semiconductor substrate. A gate electrode is opposed to the respective ones of the P-type well region and the N-type well region through a gate insulating film formed on a surface of the semiconductor substrate.

Abstract: A method of forming a semiconductor device comprises forming a base wafer comprising a first chip package portion, a second chip package portion, and a third chip package portion. The method also comprises forming a capping wafer comprising a plurality of isolation trenches, each of the plurality of isolation trenches being configured to substantially align with one of the first chip package portion, the second chip package portion or the third chip package portion. The method further comprises eutectic bonding the capping wafer and the base wafer to form a wafer package. The method additionally comprises dicing the wafer package into a first chip package, a second chip package, and a third chip package. The method also comprises placing the first chip package, the second chip package, and the third chip package onto a substrate.

Abstract: A method and apparatus for making analog and digital electronics which includes a composite including a squishable material doped with conductive particles. A microelectromechanical systems (MEMS) device has a channel made from the composite, where the channel forms a primary conduction path for the device. Upon applied voltage, capacitive actuators squeeze the composite, causing it to become conductive. The squishable device includes a control electrode, and a composite electrically and mechanically connected to two terminal electrodes. By applying a voltage to the control electrode relative to a first terminal electrode, an electric field is developed between the control electrode and the first terminal electrode. This electric field results in an attractive force between the control electrode and the first terminal electrode, which compresses the composite and enables electric control of the electron conduction from the first terminal electrode through the channel to the second terminal electrode.

Abstract: A structure having a plurality of conductive regions insulated electrically from each other comprises a movable piece supported movably above the upper face of the conductive region, the movable piece having an electrode in opposition to the conductive region, the structure being constructed to be capable of emitting and receiving electric signals through the lower face of the conductive region, the plural conductive regions being insulated by sequentially connected oxidized regions formed from an oxide of a material having through-holes or grooves.

Abstract: An object of the present invention is to propose a functional element built-in substrate which enables an electrode terminal of a functional element to be well connected to the back surface on the side opposite to the electrode terminal of the functional element, and which can be miniaturized.

Abstract: According to one embodiment, a MEMS element comprises a first electrode that is fixed on a substrate and has plate shape, a second electrode that is disposed above the first electrode while facing the first electrode, the second electrode being movable in a vertical direction and having plate shape, and a first film that includes a first cavity in which the second electrode is accommodated on the substrate. The second electrode is connected to an anchor portion connected to the substrate via a spring portion. An upper surface of the second electrode is connected to the first film.

Abstract: A micromechanical sensor apparatus having a movable gate includes a field effect transistor that has a movable gate, which is separated from a channel region by a cavity. The channel region is covered by a gate insulation layer.

Abstract: An integrated circuit device includes a first layer comprising at least two partial cavities, an intermediate layer bonded to the first layer, the intermediate layer formed to support at least two Micro-electromechanical System (MEMS) devices, and a second layer bonded to the intermediate layer, the second layer comprising at least two partial cavities to complete the at least two partial cavities of the first layer through the intermediate layer to form at least two sealed full cavities. The at least two full cavities have different pressures within.

Abstract: An integrated MEMS inertial sensor device. The device includes a MEMS inertial sensor overlying a CMOS substrate. The MEMS inertial sensor includes a drive frame coupled to the surface region via at least one drive spring, a sense mass coupled to the drive frame via at least a sense spring, and a sense electrode disposed underlying the sense mass. The device also includes at least one pair of quadrature cancellation electrodes disposed within a vicinity of the sense electrode, wherein each pair includes an N-electrode and a P-electrode.

Abstract: A micromechanical component including a first composite of a plurality of semiconductor chips, the first composite having a first front and back surfaces, a second composite of a corresponding plurality of carrier substrates, the second composite having a second front and back surfaces; wherein the first front surface and the second front surface are connected via a structured adhesion promoter layer in such a way that each semiconductor chip is connected, essentially free of cavities, to a corresponding carrier substrate corresponding to a respective micromechanical component.

Abstract: A method for forming a MEMS device is provided. The method includes the following operations of providing a substrate having a first portion and a second portion; fabricating a membrane type sensor on the first portion of the substrate using a double-side process; and fabricating a bulk silicon sensor on the second portion of the substrate.

Abstract: A semiconductor fabrication is described, wherein a MOS device and a MEMS device is fabricated simultaneously in the BEOL process. A silicon layer is deposited and etched to form a silicon film for a MOS device and a lower silicon sacrificial film for a MEMS device. A conductive layer is deposited atop the silicon layer and etched to form a metal gate and a first upper electrode. A dielectric layer is deposited atop the conductive layer and vias are formed in the dielectric layer. Another conductive layer is deposited atop the dielectric layer and etched to form a second upper electrode and three metal electrodes for the MOS device. Another silicon layer is deposited atop the other conductive layer and etched to form an upper silicon sacrificial film for the MEMS device. The upper and lower silicon sacrificial films are then removed via venting holes.

Abstract: An efficient strain-inducing mechanism may be provided on the basis of a piezoelectric material so that performance of different transistor types may be enhanced by applying a single concept. For example, a piezoelectric material may be provided below the active region of different transistor types and may be appropriately connected to a voltage source so as to obtain a desired type of strain.

Abstract: Methods and apparatus for a sensor are disclosed. An oxide layer is formed on a substrate, followed by a spacer layer and a buffer layer. A photoresist layer is formed on the buffer layer over a pixel region, with an opening exposing a first part of the buffer layer. A first etching is performed to remove the first part of the buffer layer to expose a first part of the spacer layer. A second etching is performed to remove the first part of the spacer layer, the remaining buffer layer, and partially remove a second part of the spacer layer so that the result spacer layer will have an end with a shape substantially similar to a triangle, a height of the end is in a substantially same range as a length of the end.

Abstract: A microelectronic pressure sensor comprises a MOSFET transistor adapted with a mobile gate and a cavity between the mobile gate and a substrate. The sensor includes a gate actuator configured to move mobile gate in response to a pressure being exercised. A fingerprint recognition system includes a matrix of such sensors.

Abstract: The present disclosure relates to a pressure sensor having a nanostructure and a method for manufacturing the same. More particularly, it relates to a pressure sensor having a nanostructure attached on the surface of the pressure sensor and thus having improved sensor response time and sensitivity and a method for manufacturing the same. The pressure sensor according to the present disclosure having a nanostructure includes: a substrate; a source electrode and a drain electrode arranged on the substrate with a predetermined spacing; a flexible sensor layer disposed on the source electrode and the drain electrode; and a nanostructure attached on the surface of the flexible sensor layer and having nanosized wrinkles.

Abstract: At a pressure sensor region, a pressure sensor including a fixed electrode, a vacuum chamber and a movable electrode is formed at a pressure sensor region, whereas a memory cell transistor and a field effect transistor are formed at a MOS region. An etching hole communicating with the vacuum chamber is sealed by a first sealing film and the like. The vacuum chamber is formed by removing a portion of a film identical to the film of a gate electrode of the memory cell transistor.

Abstract: The present invention exploits the combination of the amplification, provided by the integration of a FET (or any other three terminal active device), with the signal modulation, provided by the MEM resonator, to build a MEM resonator with built-in transistor (hereafter called active MEM resonator). In these devices, a mechanical displacement is converted into a current modulation and depending on the active MEM resonator geometry, number of gates and bias conditions it is possible to selectively amplify an applied signal. This invention integrates proposes to integrate transistor and micro-electro-mechanical resonator operation in a device with a single body and multiple surrounding gates for improved performance, control and functionality. Moreover, under certain conditions, an active resonator can serve as DC-AC converter and provide at the output an AC signal corresponding to its mechanical resonance frequency.

Abstract: Hybrid integrated components including an MEMS element and an ASIC element are described, whose capacitor system allows both signal detection with comparatively high sensitivity and sensitive activation of the micromechanical structure of the MEMS element. The hybrid integrated component includes an MEMS element having a micromechanical structure which extends over the entire thickness of the MEMS substrate. At least one structural element of this micromechanical structure is deflectable and is operationally linked to at least one capacitor system, which includes at least one movable electrode and at least one stationary electrode. Furthermore, the component includes an ASIC element having at least one electrode of the capacitor system. The MEMS element is mounted on the ASIC element, so that there is a gap between the micromechanical structure and the surface of the ASIC element.

Abstract: The present invention provides a CMOS compatible silicon differential condenser microphone and a method of manufacturing the same.

Abstract: A method is provided for fabricating a transistor. The method includes providing a semiconductor substrate; and configuring a channel region along a first direction. The method also includes forming trenches at both sides of the channel region along a second direction; and forming a magnetic material layer in each of the trenches. Further, the method includes magnetizing the magnetic material layers to form a magnetic field in the channel region between adjacent magnetic material layers; and forming source/drain regions at both ends of the channel region along the first direction.

Abstract: A packaging scheme for MEMS device is provided. A method of packaging MEMS device in a semiconductor structure includes forming an insulation fence that surrounds the MEMS device on the semiconductor structure. The method further includes attaching a wafer of dielectric material to the insulation fence. The lid wafer, the insulation fence, and the semiconductor structure enclose the MEMS device.

Abstract: An embodiment includes an oscillator comprising an amplifier formed on a substrate; a multiple gate resonant channel array, formed on the substrate, including: (a) transistors including fins, each of the fins having a channel between source and drain nodes, coupled to common source and drain contacts; and (b) common first and second tri-gates coupled to each of the fins and located between the source and drain contacts; wherein the fins mechanically resonate at a first frequency when one of the first and second tri-gates is periodically activated to produce periodic downward forces on the fins. Other embodiments include a non planar transistor with a channel between the source and drain nodes and a tri-gate on the fin; wherein the fin mechanically resonates when the first tri-gate is periodically activated to produce periodic downward forces on the fin. Other embodiments are described herein.

Abstract: Provided is a strain sensing device using reduced graphene oxide (R-GO). The strain sensing device includes a flexible substrate, a gate electrode formed on the flexible substrate, a gate insulating layer configured to cover the gate electrode and include a part formed of a flexible material, an active layer formed of R-GO for sensing a strain, on the gate insulating layer, and a source and drain electrode formed on the active layer.

Abstract: A CMOS compatible MEMS microphone is disclosed. In one embodiment, the microphone comprises an SOI substrate, wherein a CMOS circuitry is accommodated on its silicon device layer; a microphone diaphragm formed with a part of the silicon device layer, wherein the microphone diaphragm is doped to become conductive; a microphone backplate including CMOS passivation layers with a metal layer sandwiched and a plurality of through holes, provided above the silicon device layer, wherein the plurality of through holes are formed in the portion thereof opposite to the microphone diaphragm, and the metal layer forms an electrode plate of the backplate; a plurality of dimples protruding from the lower surface of the microphone backplate opposite to the diaphragm; and an air gap provided between the diaphragm and the microphone backplate.

Abstract: A workfunction modulation-based sensor comprising a field-effect transistor (FET). The FET comprises a substrate, a gate dielectric, a metal gate, a source, a drain, and a layer of sensing material that is electrically connected to the metal gate. An electrical connection that connects to the source of the FET. An electrical connection that connects to the drain of the FET. An electrical connection that connects to the layer of sensing material. An environment that includes an adsorbate gas surrounding, at least a portion of, the layer of sensing material. Wherein the sensing material is adapted to adsorb, at least in part, the adsorbate gas. The amount of adsorbate gas adsorbed on the layer of sensing material modulates the workfunction of the FET such that the degree of adsorbate gas adsorption corresponds to one of the temperature or pressure associated with the environment of the FET.

Abstract: An integrated circuit device includes a dielectric layer disposed over a semiconductor substrate, the dielectric layer having a sacrificial cavity formed therein, a membrane layer formed onto the dielectric layer, and a capping structure formed on the membrane layer such that a second cavity is formed, the second cavity being connected to the sacrificial cavity though a via formed into the membrane layer.

Abstract: A stacked semiconductor device includes a CMOS device and a MEMS device. The CMOS device includes a multilayer interconnect with metal elements disposed over the multilayer interconnect. The MEMS device includes metal sections with a first dielectric layer disposed over the metal sections. A cavity in the first dielectric layer exposes portions of the metal sections. A dielectric stop layer is disposed at least over the interior surface of the cavity. A movable structure is disposed over a front surface of the first dielectric layer and suspending over the cavity. The movable structure includes a second dielectric layer over the front surface of the first dielectric layer and suspending over the cavity, metal features over the second dielectric layer, and a flexible dielectric membrane over the metal features. The CMOS device is bonded to the MEMS device with the metal elements toward the flexible dielectric membrane.

Abstract: A component system includes at least one MEMS element, a cap for a micromechanical structure of the MEMS element, and at least one ASIC substrate. The micromechanical structure of the MEMS element is implemented in the functional layer of an SOI wafer. The MEMS element is mounted face down, with the structured functional layer on the ASIC substrate, and the cap is implemented in the substrate of the SOI wafer. The ASIC substrate includes a starting substrate provided with a layered structure on both sides. At least one circuit level is implemented in each case both in the MEMS-side layered structure and in the rear-side layered structure of the ASIC substrate. In the ASIC substrate, at least one ASIC through contact is implemented which electrically contacts at least one circuit level of the rear-side layered structure and/or at least one circuit level of the MEMS-side layered structure.

Abstract: Embodiments relate to MEMS devices, particularly MEMS devices integrated with related electrical devices on a single wafer. Embodiments utilize a modular process flow concept as part of a MEMS-first approach, enabling use of a novel cavity sealing process. The impact and potential detrimental effects on the electrical devices by the MEMS processing are thereby reduced or eliminated. At the same time, a highly flexible solution is provided that enables implementation of a variety of measurement principles, including capacitive and piezoresistive. A variety of sensor applications can therefore be addressed with improved performance and quality while remaining cost-effective.

Abstract: A dynamic quantity sensor device includes: first and second dynamic quantity sensors having first and second dynamic quantity detecting units; and first and second substrates, which are bonded to each other to provide first and second spaces. The first and second units are air-tightly accommodated in the first and second spaces, respectively. A SOI layer of the first substrate is divided into multiple semiconductor regions by trenches. First and second parts of the semiconductor regions provide the first and second units, respectively. The second part includes: a second movable semiconductor region having a second movable electrode, which is provided by a sacrifice etching of the embedded oxide film; and a second fixed semiconductor region having a second fixed electrode. The second sensor detects the second dynamic quantity by measuring a capacitance between the second movable and fixed electrodes, which is changeable in accordance with the second dynamic quantity.

Abstract: An integrated circuit device includes a first layer comprising at least two partial cavities, an intermediate layer bonded to the first layer, the intermediate layer formed to support at least two Micro-electromechanical System (MEMS) devices, and a second layer bonded to the intermediate layer, the second layer comprising at least two partial cavities to complete the at least two partial cavities of the first layer through the intermediate layer to form at least two sealed full cavities. The at least two full cavities have different pressures within.

Abstract: A hybrid integrated component includes: at least one ASIC element having integrated circuit elements and a back-end stack; an MEMS element having a micromechanical structure, which extends over the entire thickness of the MEMS substrate; and a cap wafer. The hybrid integrated component is provided with an additional micromechanical function. The MEMS element is mounted on the ASIC element, so that a gap exists between the micromechanical structure and the back-end stack of the ASIC element. The cap wafer is mounted above the micromechanical structure of the MEMS element. A pressure-sensitive diaphragm structure having at least one deflectable electrode of a capacitor system is implemented in the back-end stack of the ASIC element, which diaphragm structure spans a pressure connection in the rear side of the ASIC element.