Photodiodes Accessed By Fets Patents (Class 257/292)
  • Patent number: 11031515
    Abstract: A solar cell is disclosed. The solar cell has a front side facing the sun during normal operation, and a back side facing away from the sun. The solar cell comprises a silicon substrate, a first polysilicon layer with a region of doped polysilicon on the back side of the substrate. The solar cell also comprises a second polysilicon layer with a second region of doped polysilicon on the back side of the silicon substrate. The second polysilicon layer at least partially covers the region of doped polysilicon. The solar cell also comprises a resistive region disposed in the first polysilicon layer. The resistive region extends from an edge of the second region of doped polysilicon. The resistive region can be formed by ion implantation of oxygen into the first polysilicon layer.
    Type: Grant
    Filed: June 11, 2018
    Date of Patent: June 8, 2021
    Assignee: SunPower Corporation
    Inventors: Seung Rim, David D. Smith
  • Patent number: 11031421
    Abstract: A solid-state imaging element of a pixel sharing type with improved driving of transistors is disclosed. A first electric charge accumulating section and a second electric charge accumulating section are arranged in a predetermined direction. A first transfer section transfers electric charge from first photoelectric conversion elements to the first electric charge accumulating section, causing it to accumulate the electric charge. A second transfer section transfers electric charge from second photoelectric conversion elements to the second electric charge accumulating section, causing it to accumulate the electric charge. A first transistor is configured to output a signal corresponding to an amount of the electric charge accumulated in each of the first electric charge accumulating section and the second electric charge accumulating section. A second transistor is arranged with the first transistor in the predetermined direction and connected in parallel to the first transistor.
    Type: Grant
    Filed: February 23, 2018
    Date of Patent: June 8, 2021
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Kazuhiko Nakadate, Toshifumi Wakano, Masahiko Nakamizo
  • Patent number: 11031426
    Abstract: An image sensor includes a substrate, a grid isolation structure, and a color filter. The substrate has a light-sensitive element therein. The grid isolation structure is above the substrate and includes a reflective layer, a first dielectric layer above the reflective layer, and a second dielectric layer above the first dielectric layer. The color filter is above the light-sensitive element and is surrounded by the grid isolation structure.
    Type: Grant
    Filed: November 18, 2019
    Date of Patent: June 8, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yun-Wei Cheng, Yin-Chieh Huang, Chun-Hao Chou, Kuo-Cheng Lee, Hsun-Ying Huang
  • Patent number: 11018175
    Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic device capable of increasing utilization efficiency of a substrate. The solid-state imaging device includes a first semiconductor substrate provided with a sensor circuit having a photoelectric conversion part, and a second semiconductor substrate and a third semiconductor substrate provided with respective circuits different from the sensor circuit. The first semiconductor substrate, the second semiconductor substrate, and the third semiconductor substrate are stacked on each other in three layers, and a metal element for an electrode constituting an electrode for external connection is disposed in the first semiconductor substrate. An electrode for a measuring terminal is disposed within the second semiconductor substrate or the third semiconductor substrate, and the first semiconductor substrate is stacked after performing a predetermined measurement.
    Type: Grant
    Filed: February 13, 2020
    Date of Patent: May 25, 2021
    Assignee: SONY CORPORATION
    Inventor: Hiroshi Takahashi
  • Patent number: 11004879
    Abstract: The present technology relates to a semiconductor device, a solid-state image pickup element, an imaging device, and an electronic apparatus that can suppress characteristic fluctuations caused by capacitance fluctuations due to a dummy wire, while maintaining an affixing bonding strength by the dummy wire. Two or more chips in which wires that are electrically connected are formed on bonding surfaces and the bonding surfaces opposing each other are bonded to be laminated are included and, with respect to a region where the wires are periodically and repeatedly disposed in sharing units each made up of a plurality of pixels sharing the same floating diffusion contact, a dummy wire is disposed at the center position thereof on the bonding surface at a pitch of the sharing unit. The present technology can be applied to a CMOS image sensor.
    Type: Grant
    Filed: February 19, 2020
    Date of Patent: May 11, 2021
    Assignee: SONY CORPORATION
    Inventors: Rena Suzuki, Takeshi Matsunuma, Naoki Jyo, Yoshihisa Kagawa
  • Patent number: 10998363
    Abstract: A solid-state imaging device including a semiconductor substrate including photoelectric conversion elements, and having color filters of plural colors formed on the semiconductor substrate and positioned in correspondence to the photoelectric conversion elements, a first visible-light transmissive layer formed between the semiconductor substrate and the color filters, and second visible-light transmissive layers each formed between adjacent color filters. The second visible-light transmissive layers include a same material as the first visible-light transmissive layer and are continuous with the first visible-light transmissive layer.
    Type: Grant
    Filed: October 17, 2019
    Date of Patent: May 4, 2021
    Assignee: TOPPAN PRINTING CO., LTD.
    Inventor: Satoshi Takahashi
  • Patent number: 10991743
    Abstract: The present technology relates to a solid state image pickup device and a production method, a semiconductor wafer, and an electronic apparatus by which the yield can be improved. On a semiconductor wafer, a chip region in which pixels and so forth that configure a solid state image pickup device are formed and a scribe region are formed. In the scribe region, a measuring region in which an inspection circuit for measuring a property of the chip region and measurement pads are formed and a dicing line to be cut upon fragmentation of the semiconductor wafer are provided. The measuring region is positioned between the dicing line and the chip region. The present technology can be applied to a solid state image pickup device.
    Type: Grant
    Filed: February 26, 2016
    Date of Patent: April 27, 2021
    Assignee: Sony Corporation
    Inventor: Toshiaki Iwafuchi
  • Patent number: 10992890
    Abstract: A solid state imaging device includes: a group of a plurality of pixels configured to include pixels of the same color coding and with no pixel sharing between each other; and a color filter that is formed by Bayer arrangement of the group of a plurality of pixels.
    Type: Grant
    Filed: September 27, 2019
    Date of Patent: April 27, 2021
    Assignee: Sony Semiconductor Solutions Corporation
    Inventor: Atsuhiko Yamamoto
  • Patent number: 10985102
    Abstract: Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.
    Type: Grant
    Filed: May 13, 2019
    Date of Patent: April 20, 2021
    Assignee: Sony Corporation
    Inventors: Yoshihisa Kagawa, Kenichi Aoyagi, Yoshiya Hagimoto, Nobutoshi Fujii
  • Patent number: 10971533
    Abstract: In an embodiment, an image sensor includes a semiconductor region, a first doped region disposed over the semiconductor region, a ring shaped well disposed over the first doped region and surrounding parts of the first doped region, a second doped region formed within the ring shaped well and disposed over the first doped region, and a third doped region disposed over the second doped region. The ring shaped well is defined by a conductor surrounded by an insulator. The conductor is connected to a voltage terminal. The third doped region is more heavily doped than the second doped region, which is more heavily doped than the first region, and are all of the same doping type. The first doped region and the second doped region within the ring shaped well, form a potential barrier for controlling transfer of charge carriers from the first doped region to the third doped region.
    Type: Grant
    Filed: January 29, 2018
    Date of Patent: April 6, 2021
    Assignee: STMICROELECTRONICS (CROLLES 2) SAS
    Inventor: Francois Roy
  • Patent number: 10950644
    Abstract: An image pickup element includes: a semiconductor substrate including a photoelectric conversion section for each pixel; a pixel separation groove provided in the semiconductor substrate; and a fixed charge film provided on a light-receiving surface side of the semiconductor substrate, wherein the fixed charge film includes a first insulating film and a second insulating film, the first insulating film being provided contiguously from the light-receiving surface to a wall surface and a bottom surface of the pixel separation groove, and the second insulating film being provided on a part of the first insulating film, the part corresponding to at least the light-receiving surface.
    Type: Grant
    Filed: September 11, 2019
    Date of Patent: March 16, 2021
    Assignee: Sony Corporation
    Inventors: Shuji Manda, Susumu Hiyama, Yasuyuki Shiga
  • Patent number: 10928438
    Abstract: A semiconductor device with at least one embedded photodetector is disclosed. The at least one photodetector is embedded in a hot carrier injection (HCI) area, and detects a quantity of emitted photons. Further, the photodetector triggers a warning when the photodetector detects a number of photons greater than a threshold number of photons. Additional embodiments are directed to a method of detecting HCI. The method includes embedding a photodetector in a power semiconductor device, setting at least one threshold number of photons, detecting photons, determining a number of photons, determining when the number of photons is above a threshold number of photons, and generating a warning. When the number of photons is above the threshold, the warning is triggered. Further embodiments are directed to an article of manufacture comprising at least one semiconductor device with at least one photodetector embedded in an area predicted to experience HCI.
    Type: Grant
    Filed: July 20, 2017
    Date of Patent: February 23, 2021
    Assignee: International Business Machines Corporation
    Inventor: Justin E. Henspeter
  • Patent number: 10923519
    Abstract: The present invention provides a pixel structure for a CMOS image sensor and a manufacturing method therefor, the pixel structure comprising: a substrate; a floating diffusion region formed in the substrate; an interlayer dielectric layer formed on an upper surface of the substrate and covering the pixel structure; and a light-shielding wall formed in the interlayer dielectric layer, wherein a projection of the light-shielding wall in the height direction of the substrate surrounds a projection of the floating diffusion region in the height direction of the substrate. The present invention further provides a manufacturing method for manufacturing the pixel structure. The pixel structure manufactured by means of the manufacturing method provided in the present invention can shield the irradiation of incident light on the floating diffusion region of the global CMOS image sensor, thereby reducing interference signals.
    Type: Grant
    Filed: November 20, 2018
    Date of Patent: February 16, 2021
    Inventors: Yan Li, Wuzhi Zhang
  • Patent number: 10917602
    Abstract: An imaging device comprising a pixel substrate including pixel element circuitry, a logic substrate including read circuitry configured to receive an output signal voltage from the pixel element circuitry, and electrically-conductive material arranged between the pixel substrate and the logic substrate, wherein the electrically-conductive material is configured to transfer at least one reference voltage from the logic substrate to the pixel substrate, wherein the electrically-conductive material comprises a Cu—Cu bonding portion.
    Type: Grant
    Filed: December 8, 2016
    Date of Patent: February 9, 2021
    Assignee: Sony Corporation
    Inventors: Yasunori Tsukuda, Kenichi Takamiya
  • Patent number: 10910419
    Abstract: An image sensor is provided and includes a semiconductor substrate having a first conductivity type, a photoelectric conversion region in the semiconductor substrate and having a second conductivity type, an oxide semiconductor pattern adjacent to a first surface of the semiconductor substrate, and a transfer gate on the first surface and adjacent to the photoelectric conversion region and the oxide semiconductor pattern.
    Type: Grant
    Filed: May 21, 2019
    Date of Patent: February 2, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Gwideok Ryan Lee, Taeyon Lee, Sangchun Park
  • Patent number: 10904456
    Abstract: A time-of-flight image sensor (TOF) for imaging with ambient light subtraction. In one embodiment, the TOF image sensor includes a pixel array, a control circuit, and a signal processing circuit. The signal processing circuit reads out a first data signal from respective first floating diffusions and respective second floating diffusions during a first frame while a light generator is not emitting, reads out a second data signal from the respective first floating diffusions and the respective second floating diffusions during a second frame after the first integration and after a second integration while the light generator is emitting, generate a third data signal indicative of ambient light, generate a fourth data signal indicative of the ambient light and a light signal reflected off an object, and generate a fifth data signal indicative of the light signal by subtracting the third data signal from the fourth data signal.
    Type: Grant
    Filed: March 18, 2020
    Date of Patent: January 26, 2021
    Assignee: Sony Semiconductor Solutions Corporation
    Inventor: Elad Ilan
  • Patent number: 10893224
    Abstract: The present technology relates to an imaging element and an electronic device that enable pixels to flexibly share a charge voltage converting unit. The imaging element includes a pixel array unit in which pixels respectively having charge voltage converting units and switches are arranged, and the charge voltage converting units of the plurality of pixels are connected to a signal line in parallel via the respective switches. The present technology is applied to, for example, a Complementary Metal Oxide Semiconductor (CMOS) image sensor in which pixels share a charge voltage converting unit.
    Type: Grant
    Filed: February 14, 2017
    Date of Patent: January 12, 2021
    Assignee: SONY CORPORATION
    Inventors: Yuu Kajiwara, Masahiko Nakamizo
  • Patent number: 10892286
    Abstract: An imaging device according to the present disclosure includes: a photoelectric converter generating signal charge; a semiconductor substrate including a first semiconductor layer on a surface; a charge accumulation region of a first conductivity type in the first semiconductor layer; a first transistor including, as a source or a drain, a first impurity region of the first conductivity type in the first semiconductor layer; and a blocking structure between the charge accumulation region and the first transistor. The blocking structure includes a second impurity region of a second conductivity type in the first semiconductor layer, between the charge accumulation region and the first impurity region, and a first electrode above the first semiconductor layer, overlapping at least part of the second impurity region in plan view, the first electrode being configured to be applied with a constant voltage in a period when the charge accumulation region accumulates the signal charge.
    Type: Grant
    Filed: May 14, 2019
    Date of Patent: January 12, 2021
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Yoshihiro Sato, Junji Hirase
  • Patent number: 10892288
    Abstract: A solid state imaging device according to one embodiment, includes a first pixel and a second pixel adjacent to each other in a first direction. Structures of the first pixel and the second pixel are mutually mirror-symmetric. Each of the first pixel and the second pixel includes an opening region where light enters. The opening region of the first pixel is disposed over an entire width in the first direction of the first pixel. The opening region of the second pixel is disposed over an entire width in the first direction of the second pixel.
    Type: Grant
    Filed: February 7, 2019
    Date of Patent: January 12, 2021
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
    Inventor: Masayuki Ooki
  • Patent number: 10880505
    Abstract: To reduce variations in switching timing from linear reading to logarithmic reading and perform reading with high accuracy in a solid state imaging device. A first photoelectric conversion unit converts incident light into charges and accumulates the charges in a first region. A second photoelectric conversion unit converts incident light into charges and accumulates the charges in a second region having a smaller area than the first region. A charge-voltage conversion unit accumulates charges photoelectrically converted by the first and second photoelectric conversion units for converting the charges into a voltage. First and second charge transfer units transfer charges accumulated in the first photoelectric conversion unit and charges accumulated in the second photoelectric conversion unit to the charge-voltage conversion unit, respectively. A charge reset unit resets charges accumulated in the charge-voltage conversion unit.
    Type: Grant
    Filed: December 12, 2017
    Date of Patent: December 29, 2020
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Takuya Toyofuku, Yorito Sakano
  • Patent number: 10872921
    Abstract: An image sensor and a method for fabricating the image sensor are provided. In the method for fabricating the image sensor, at first, a substrate having a first surface and a second surface opposite to the first surface is provided. Then, light-sensitive regions are formed in the substrate. Thereafter, transfer gate structures are formed on the first surface of the substrate. Then, the first surface of the substrate is formed to form recess structures on the light-sensitive regions. Thereafter, light-reflective layers are formed to cover the recess structures of the first surface of the substrate, in which the recess structures are filled with protrusion structures of the light-reflective layers. Further, the second surface of the substrate may be etched to form recess structures corresponding to the light-sensitive regions.
    Type: Grant
    Filed: August 30, 2018
    Date of Patent: December 22, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yun-Wei Cheng, Chun-Hao Chou, Kuo-Cheng Lee, Hsin-Chi Chen
  • Patent number: 10872987
    Abstract: Barrier infrared detectors having structures configured to enhance the quantum efficiency, and methods of their manufacture are provided. In particular, device structures for constructing high-performance barrier infrared detectors using novel combinations of p-type and n-type absorber regions and contact regions are provided. The infrared detectors generally incorporate a “p+Bpnn+” structure. The detectors generally comprise, in sequence, a highly p-doped contact layer “p+”, an electron unipolar barrier “B”, a p-type absorber section “p”, and n-type absorber section “n”, and a highly n-doped contact layer “n+”.
    Type: Grant
    Filed: December 12, 2016
    Date of Patent: December 22, 2020
    Assignee: California Institute of Technology
    Inventors: David Z. Ting, Alexander Soibel, Arezou Khoshakhlagh, Sarath D. Gunapala
  • Patent number: 10868059
    Abstract: An image sensor includes a semiconductor substrate including a first surface and a second surface and further includes a well region and a first floating diffusion region that are each adjacent to the first surface. The image sensor includes a first vertical transmission gate and a second vertical transmission gate isolated from direct contact with each other and each extend from the first surface of the semiconductor substrate and in a thickness direction of the semiconductor substrate through at least a portion of the well region. The image sensor includes a first storage gate between the first vertical transmission gate and the first floating diffusion region and on the first surface of the semiconductor substrate. The image sensor includes a first tap transmission gate between the first storage gate and the first floating diffusion region and on the first surface of the semiconductor substrate.
    Type: Grant
    Filed: July 23, 2019
    Date of Patent: December 15, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-gu Jin, Young-chan Kim
  • Patent number: 10868070
    Abstract: Image sensors are provided. An image sensor includes a substrate that includes a pixel region, a first surface, and a second surface that is opposite the first surface. The image sensor includes first and second photogates that are on the first surface and are configured to generate electric charge responsive to incident light in the pixel region. Moreover, the image sensor includes first and second lenses that are on the second surface and are configured to pass the incident light toward the first and second photogates.
    Type: Grant
    Filed: November 30, 2018
    Date of Patent: December 15, 2020
    Inventors: Young Gu Jin, Young Chan Kim, Min-Sun Keel
  • Patent number: 10868075
    Abstract: A photosensitive detection unit has a composite dielectric gate MOS-C portion and a composite dielectric gate MOSFET portion. The two portions are formed above a same P-type semiconductor substrate, and share a charge coupled layer. A plurality of the photosensitive detection units are arranged on a same P-type semiconductor substrate in form of an array to obtain a detector. Adjacent unit pixels in the detector are isolated by deep trench isolation regions and P+-type injection regions below the isolation regions. During the detection, the P-type semiconductor substrate in the composite dielectric gate MOS-C portion senses light and then couples photoelectrons to the charge coupled layer, and photoelectronic signals are read by the composite dielectric gate MOSFET portion.
    Type: Grant
    Filed: October 20, 2016
    Date of Patent: December 15, 2020
    Assignee: NANJING UNIVERSITY
    Inventors: Haowen Ma, Feng Yan, Xiaofeng Bu, Chen Shen, Limin Zhang, Cheng Yang, Cheng Mao
  • Patent number: 10861889
    Abstract: A semiconductor device operable to demodulate incident modulated electromagnetic radiation, the semiconductor device comprising: a pinned photodiode structure including a substrate of a first type, an implant layer of a second type disposed within the substrate, first and second auxiliary implant layers of the second type disposed within the substrate and each disposed adjacent to the implant layer of the second type, an implant layer of the first type disposed within the implant layer of the second type and extending into the first and second auxiliary implant layers of the second type, an insulator disposed on a surface of the substrate, and a photo-detection region; first and second transfer gates disposed on a surface of the insulator, the transfer gates being operable to generate a field within the substrate; and first and second floating diffusion implant layers of the second type disposed within the substrate.
    Type: Grant
    Filed: January 16, 2017
    Date of Patent: December 8, 2020
    Assignee: ams Sensors Singapore Pte. Ltd.
    Inventors: Bernhard Buettgen, Gözen Köklü, Theodor Walter Loeliger
  • Patent number: 10854659
    Abstract: Back side illumination (BSI) image sensors are provided. A BSI image sensor includes a substrate and a plurality of pixels configured to generate electrical signals responsive to light incident on the substrate. Each of the plurality of pixels includes a photodiode, an infrared radiation (IR) cut-off filter above the photodiode, a light shield pattern above the photodiode and including an opening corresponding to an area of 1 to 15% of each of the plurality of pixels, a planarization layer on the light shield pattern, and a lens on the planarization layer.
    Type: Grant
    Filed: January 29, 2020
    Date of Patent: December 1, 2020
    Inventors: Yun Ki Lee, Jong Hoon Park, Jun Sung Park
  • Patent number: 10854656
    Abstract: The invention relates to short-wave infrared (SWIR) detector arrays, and methods for forming such arrays, comprising a light conversion layer (10) having a germanium-tin alloy composition. The shortwave infrared (SWIR) detector array comprises an absorber wafer (II) and a readout wafer (I). The absorber wafer (II) comprises a SWIR conversion layer (10) which has a Gei-xSnxalloy composition. The SWIR conversion layer (10) may have an internal structure comprising an array of rods (12) extending between a patterned support layer (40) and a doped silicon layer (10c). The detector comprises also a readout wafer (I) including an array of charge collecting areas and a readout electric circuit. The readout wafer (I) and the absorber wafer (II) are bonded by a low temperature bonding technique. The invention also relates to methods of fabrication of the SWIR detector array and to SWIR detector array applications such as a multi/hyperspectral LIDAR imaging systems.
    Type: Grant
    Filed: April 24, 2017
    Date of Patent: December 1, 2020
    Assignee: IRIS INDUSTRIES SA
    Inventor: Claude Meylan
  • Patent number: 10854658
    Abstract: An image sensor includes a photodiode within a semiconductor substrate and an interconnect structure over the semiconductor substrate. The interconnect structure includes a contact etch stop layer (CESL), a plurality of dielectric layers over the CESL and a plurality of metallization layers in the plurality of dielectric layers. At least one dielectric layer of the plurality of dielectric layers includes a low-k dielectric material. An opening is extended through the plurality of dielectric layers to expose a portion of the CESL above an active region of the photodiode. A cap layer is on sidewalls of the opening. The cap layer includes a dielectric material having a higher moisture resistance than the low-k dielectric material.
    Type: Grant
    Filed: July 9, 2019
    Date of Patent: December 1, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chiao-Chi Wang, Chung-Chuan Tseng, Chia-Ping Lai
  • Patent number: 10818714
    Abstract: An image sensor may include an antireflection layer formed over a substrate, grid patterns and a guide pattern that are disposed over the antireflection layer, a color filter between the grid patterns, a phase difference detection filter structured to include a portion between one of the grid patterns and the guide pattern, and a lining layer formed to include a portion between one of the grid patterns and the phase difference detection filter. The lining layer has a refractive index lower than that of the phase difference detection filter.
    Type: Grant
    Filed: December 13, 2018
    Date of Patent: October 27, 2020
    Assignee: SK hynix Inc.
    Inventor: Yun-Hui Yang
  • Patent number: 10811454
    Abstract: There is provided a solid-state imaging device including a first substrate having a pixel circuit including a pixel array unit formed thereon, and a second substrate having a plurality of signal processing circuits formed thereon so as to be arranged through a scribe region. The first substrate and the second substrate are stacked.
    Type: Grant
    Filed: February 25, 2019
    Date of Patent: October 20, 2020
    Assignee: Sony Corporation
    Inventor: Kunihiko Izuhara
  • Patent number: 10784296
    Abstract: The present disclosure relates to the technical field of semiconductors, and discloses an image sensor and a manufacturing method therefor. The image sensor includes: a semiconductor substrate; a first active region located on the semiconductor substrate; a doped semiconductor layer located on the first active region; and a contact located on the semiconductor layer, where the first active region includes: a first doped region and a second doped region abutting against the first doped region, wherein the second doped region is located at an upper surface of the first active region, and wherein the second doped region is formed by dopants in the semiconductor layer that are annealed to be diffused to a surface layer of the first doped region. The present disclosure may reduce leakage current and improve device performances.
    Type: Grant
    Filed: April 23, 2019
    Date of Patent: September 22, 2020
    Assignees: Semiconductor Manufacturing (Shanghai) International Corporation, Semiconductor Manufacturing (Beijing) International Corporation
    Inventors: Tzu Yin Chiu, Chong Wang, Haifang Zhang, Xuanjie Liu
  • Patent number: 10777590
    Abstract: A method for forming an image sensor device structure is provided. The method includes forming a light-sensing region in a substrate, and forming an interconnect structure below a first surface of the substrate. The method also includes forming a trench in the light-sensing region from a second surface of the substrate, and forming a doping layer in the trench. The method includes forming an oxide layer in the trench and on the doping layer to form a doping region, and the doping region is inserted into the light-sensing region.
    Type: Grant
    Filed: October 2, 2019
    Date of Patent: September 15, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Yen-Ting Chiang, Chun-Yuan Chen, Hsiao-Hui Tseng, Yu-Jen Wang, Shyh-Fann Ting, Wei-Chuang Wu, Jen-Cheng Liu, Dun-Nian Yaung
  • Patent number: 10777591
    Abstract: A semiconductor device includes: a photodiode formed in a substrate; and at least one transistor having a gate feature that comprises a first portion and a second portion coupled to an end of the first portion, the first portion disposed above and extending along a major surface of the substrate and the second portion extending from the major surface of the substrate into the substrate, wherein the photodiode and the at least one transistor at least partially form a pixel.
    Type: Grant
    Filed: January 29, 2018
    Date of Patent: September 15, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chen-Hsiang Hung, Chung-Chuan Tseng, Li-Hsin Chu, Chia-Ping Lai
  • Patent number: 10770502
    Abstract: Disclosed is a method of fabricating a semiconductor image sensor device. The method includes providing a substrate having a pixel region, a periphery region, and a bonding pad region. The substrate further has a first side and a second side opposite the first side. The pixel region contains radiation-sensing regions. The method further includes forming a bonding pad in the bonding pad region; and forming light-blocking structures over the second side of the substrate, at least in the pixel region, after the bonding pad has been formed.
    Type: Grant
    Filed: November 25, 2019
    Date of Patent: September 8, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chiu-Jung Chen, Chun-Hao Chou, Hsin-Chi Chen, Kuo-Cheng Lee, Volume Chien, Yung-Lung Hsu, Yun-Wei Cheng
  • Patent number: 10770505
    Abstract: Per-pixel performance is improved in a combined visible and ultraviolet image sensor array such as for a hyperspectral camera. In one example, an array of photodetectors is formed on a silicon substrate. A subset of the photodetectors are improved to improve sensitivity to ultraviolet light, and the photodetector array is finished to form an image sensor.
    Type: Grant
    Filed: April 5, 2017
    Date of Patent: September 8, 2020
    Assignee: Intel Corporation
    Inventors: Richmond Hicks, Khaled Ahmed
  • Patent number: 10770499
    Abstract: An image sensor including a substrate having a first, a first device isolation region adjacent to the first surface and defining a unit pixel, a transfer gate on the first surface at an edge of the unit pixel, a photoelectric conversion part in the substrate and adjacent to a first side surface of the transfer gate, and a floating diffusion region in the substrate and adjacent to a second side surface of the transfer gate. The second side surface faces the first side surface. The first device isolation region is spaced apart from the second side surface. The substrate and the first device isolation region are doped with impurities having a first conductivity. A first impurity concentration of the first device isolation region is greater than a second impurity concentration of the substrate.
    Type: Grant
    Filed: September 7, 2018
    Date of Patent: September 8, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: SeungSik Kim, Sungchul Kim, Haeyong Park
  • Patent number: 10756127
    Abstract: A method for fabricating an image sensor array having a first group of photodiodes for detecting light at visible wavelengths a second group of photodiodes for detecting light at infrared or near-infrared wavelengths, the method including growing a germanium-silicon layer on a semiconductor donor wafer; defining pixels of the image sensor array on the germanium-silicon layer; defining a first interconnect layer on the germanium-silicon layer, wherein the interconnect layer includes a plurality of interconnects coupled to the first group of photodiodes and the second group of photodiodes; defining integrated circuitry for controlling the pixels of the image sensor array on a semiconductor carrier wafer; defining a second interconnect layer on the semiconductor carrier wafer, wherein the second interconnect layer includes a plurality of interconnects coupled to the integrated circuitry; and bonding the first interconnect layer with the second interconnect layer.
    Type: Grant
    Filed: September 22, 2017
    Date of Patent: August 25, 2020
    Assignee: Artilux, Inc.
    Inventors: Yun-Chung Na, Szu-Lin Cheng, Shu-Lu Chen, Han-Din Liu, Hui-Wen Chen, Che-Fu Liang
  • Patent number: 10750108
    Abstract: An imaging system comprises an image pixel array, a dark pixel array, and a controller. The image pixel array includes a plurality of pixel clusters adapted to generate image signals. The dark pixel array is adapted to generate one or more black reference signals corresponding to a global black level value of the imaging system. The controller includes logic that when executed by the controller causes the system to perform operations including determining local black level values for each of the pixel clusters and correcting a first image signal included in the image signals based, at least in part, on the global black level and a first local black level value included in the local black level values.
    Type: Grant
    Filed: September 25, 2018
    Date of Patent: August 18, 2020
    Assignee: OmniVision Technologies, Inc.
    Inventor: Gabor Mikes
  • Patent number: 10749064
    Abstract: The invention relates to a radiation detector comprising a stack of superimposed layers successively comprising: an absorbent layer configured to absorb the radiation and made from a first semiconductor material, a screen charges layer made from a semiconductor material having a second bandgap value, a transition layer made from a semiconductor material having a third bandgap value, and a transition layer made from a semiconductor material having a third bandgap value, the absorbent layer and the screen charges layer having a doping of a first type, the first window layer having a doping of a second type, a dopant density of the window layer being greater than the dopant density of the transition layer.
    Type: Grant
    Filed: July 7, 2017
    Date of Patent: August 18, 2020
    Assignees: THALES, COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES
    Inventors: Axel Evirgen, Jean-Luc Reverchon
  • Patent number: 10741599
    Abstract: Imaging devices and electronic apparatuses incorporating imaging devices or image pick-up elements are provided. An imaging device as disclosed can include a substrate, a first opto-electronic converter having a first area formed in the substrate, and a second opto-electronic converter having a second area formed in the substrate. The first area is larger than the second area. In addition, a light blocking wall can extend from a first surface of the substrate such that at least a portion of the light blocking wall is between the first opto-electronic converter and the second opto-electronic converter.
    Type: Grant
    Filed: October 12, 2016
    Date of Patent: August 11, 2020
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Takeshi Yanagita, Taichi Natori, Hirotsugu Takahashi, Shunsuke Maruyama, Yasushi Maruyama
  • Patent number: 10734426
    Abstract: An image sensor is provided to include image pixels and phase difference detection pixels. The image pixels may include image photodiodes formed in a substrate; color filters formed over the substrate and vertically overlapping with the image photodiodes; and image micro lenses over the color filters. The phase difference detection pixels may include phase difference detection photodiodes formed in the substrate; transmitting layers formed over the substrate and vertically overlapping with the phase difference detection photodiodes; guide patterns formed between the substrate and the transmitting layers; and phase difference detection micro lenses over the transmitting layers. The transmitting layers may have a refractive index lower than the color filters and the phase difference detection micro lenses.
    Type: Grant
    Filed: December 14, 2018
    Date of Patent: August 4, 2020
    Assignee: SK hynix Inc.
    Inventor: Youngwoong Do
  • Patent number: 10720466
    Abstract: An image sensor is disclosed. The image sensor may include a photosensing region in a substrate and configured to generate photoelectrons in response to incident light on the photosensing region; bias patterns arranged to surround the photosensing region and including a conductive material; a floating diffusion region at a center of the photosensing region to store photoelectrons generated by the photosensing region; and transfer gates that partially overlap with the floating diffusion region and are operable to transfer photoelectrons generated by the photosensing region to the floating diffusion region. The photosensing region and the bias patterns are electrically isolated from one another.
    Type: Grant
    Filed: December 13, 2018
    Date of Patent: July 21, 2020
    Assignee: SK hynix Inc.
    Inventor: Sun-Ho Oh
  • Patent number: 10714527
    Abstract: A photoelectric conversion apparatus is provided. The apparatus comprises a substrate including two light receiving regions in which light receiving devices are arranged; electrode pads arranged on the substrate; and a readout circuit arranged on the substrate and configured to read out signals from the light receiving regions. The electrode pads include an output pad for outputting a signal, and a power supply pad for supplying power to the light receiving regions or the readout circuit. Each of the light receiving regions has a shape in which a first direction is taken as a longitudinal direction, the light receiving regions are arranged along a second direction with an interval therebetween, the second direction intersecting the first direction, and one or more pads of the electrode pads is sandwiched by the light receiving regions in the second direction.
    Type: Grant
    Filed: February 8, 2018
    Date of Patent: July 14, 2020
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hirotaka Shiomichi, Wataru Endo
  • Patent number: 10707248
    Abstract: In one general aspect, the techniques disclosed here feature an imaging device that includes: a semiconductor substrate; a first pixel cell including a first photoelectric converter in the semiconductor substrate, and a first capacitive element one end of which is electrically connected to the first photoelectric converter; and a second pixel cell including a second photoelectric converter in the semiconductor substrate. An area of the second photoelectric converter is larger than an area of the first photoelectric converter in a plan view.
    Type: Grant
    Filed: July 25, 2018
    Date of Patent: July 7, 2020
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Sanshiro Shishido, Masashi Murakami, Kazuko Nishimura
  • Patent number: 10692914
    Abstract: An image sensor is disclosed. The image sensor includes an epitaxial layer, a plurality of plug structures and an interconnect structure. Wherein the plurality of plug structures are formed in the epitaxial layer, and each plug structure has doped sidewalls, the epitaxial layer and the doped sidewalls form a plurality of photodiodes, the plurality of plug structures are used to separate adjacent photodiodes, and the epitaxial layer and the doped sidewalls are coupled to the interconnect structure via the plug structures. An associated method of fabricating the image sensor is also disclosed. The method includes: providing a substrate having a first-type doped epitaxial substrate layer on a second-type doped epitaxial substrate layer; forming a plurality of isolation trenches in the first-type doped epitaxial substrate layer; forming a second-type doped region along sidewalls and bottoms of the plurality of isolation trenches; and filling the plurality of isolation trenches by depositing metal.
    Type: Grant
    Filed: January 7, 2019
    Date of Patent: June 23, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Alexander Kalnitsky, Jhy-Jyi Sze, Dun-Nian Yaung, Chen-Jong Wang, Yimin Huang, Yuichiro Yamashita
  • Patent number: 10692922
    Abstract: A photoelectric conversion device includes photoelectric converter arranged in semiconductor substrate made of silicon and is and transistor arranged on surface of the substrate. The photoelectric converter includes first region of a first conductivity type, configured to accumulate charges, and second region of second conductivity type. The first region is arranged between the surface and the second region. The substrate includes third region as source and/or drain of the transistor. The substrate includes, in position which is below the third region and is apart from the third region, impurity region containing group 14 element other than silicon. Depth from the surface of peak position in density distribution of the group 14 element in the impurity region is smaller than depth from the surface of peak position in density distribution of majority carrier in the second region.
    Type: Grant
    Filed: November 20, 2018
    Date of Patent: June 23, 2020
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Tasuku Kaneda, Toshihiro Shoyama
  • Patent number: 10686001
    Abstract: An image sensor includes: a photoelectric conversion unit that photoelectrically converts incident light transmitted through a microlens to generate electric charge; an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit; and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, wherein: the photoelectric conversion unit, the transfer unit, and the accumulation unit are provided along a direction of an optical axis of the microlens.
    Type: Grant
    Filed: September 26, 2016
    Date of Patent: June 16, 2020
    Assignee: NIKON CORPORATION
    Inventors: Toru Takagi, Satoshi Nakayama, Ryoji Ando, Takashi Seo, Yohei Matsuoka, Yoshiyuki Watanabe
  • Patent number: 10672808
    Abstract: An optical sensor in which photo currents generated by light in the visible and infrared wavelength ranges are to be tapped separately at pn junctions of active regions. The active regions include n- or p-doping and are formed in a p-substrate 52. The optical sensor comprises a surface-near first active region 12, and a second active region 14 subjacent to the first active region 12 and forming together with the first active region 12 a pn junction 22 that is short-circuited. A third active region 20 is subjacent to the second active region 14 and forming together with the second active region a further pn junction 23. Together with a fourth active region 24 subjacent to the second active region 20, a further pn junction 25, 29 is formed together with the third active region 20 and the substrate 52.
    Type: Grant
    Filed: August 6, 2019
    Date of Patent: June 2, 2020
    Assignee: X-FAB Semiconductor Foundries GmbH
    Inventor: Daniel Gaebler
  • Patent number: 10665802
    Abstract: An organic photoelectric conversion element, an imaging device, and an optical sensor, which can detect a plurality of wavelength regions by a single element structure, are provided. The photoelectric conversion element is formed by providing an organic photoelectric conversion portion including two or more types of organic semiconductor materials having different spectral sensitivities between the first and the second electrodes. Wavelength sensitivity characteristics of the photoelectric conversion element change according to a voltage (bias voltage) applied between the first and the second electrodes. The photoelectric conversion element is mounted in the imaging device and the optical sensor.
    Type: Grant
    Filed: January 16, 2019
    Date of Patent: May 26, 2020
    Assignee: SONY CORPORATION
    Inventors: Toru Udaka, Masaki Murata, Rui Morimoto, Osamu Enoki