Imaging Array Patents (Class 257/291)
  • Patent number: 11127675
    Abstract: An interconnection structure includes a first interlayer dielectric layer, a first conductive line, a protection layer, a second interlayer dielectric layer, and a connection plug. The first conductive line is partially disposed in the first interlayer dielectric layer. The protection layer is disposed on the first conductive line and the first interlayer dielectric layer. The protection layer covers a top surface and a sidewall of the first conductive line. The protection layer includes a recess disposed corresponding to the first conductive line in a vertical direction. The second interlayer dielectric layer is disposed on the protection layer. The connection plug penetrates at least a part of the second interlayer dielectric layer and the protection layer for being connected with the first conductive line.
    Type: Grant
    Filed: December 11, 2019
    Date of Patent: September 21, 2021
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Min-Shiang Hsu, Yu-Han Tsai, Chih-Sheng Chang
  • Patent number: 11114484
    Abstract: A photoelectric conversion apparatus includes, a semiconductor substrate having a photoelectric conversion unit performing photoelectric conversion on entering light and accumulating first electric charges, a first transistor electrically connected to the photoelectric conversion unit and having a first gate on a second surface, and a second transistor having a second gate shorter than the first gate on the second surface, a first fixed charge film continuously provided directly or with an insulating film in between in an area overlapping the photoelectric conversion unit on a first surface and the second transistor, the first fixed charge film having fixed charges of the first polarity, and a second fixed charge film provided directly or with an insulating film in between in an area overlapping the second transistor and the first fixed charge film, the second fixed charge film having fixed charges of a second polarity.
    Type: Grant
    Filed: May 29, 2019
    Date of Patent: September 7, 2021
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Takumi Ogino, Hideaki Ishino
  • Patent number: 11114423
    Abstract: An image-forming element includes a plurality of pixels, and projects and displays light emitted from the pixels. The image-forming element includes a light emitting element which includes a light source emitting the light and a mounting substrate on which a plurality of light emitting elements are provided on a mounting surface. A plurality of light sources which are segmented and included in at least one pixel are provided, and each of the light sources includes power supply electrodes provided on the same surface or a surface facing the mounting substrate. The mounting substrate includes a drive circuit which drives the light source and electrodes which are provided on the mounting surface and are electrically connected to the power supply electrodes of the light source. In each pixel, an area occupation ratio of the light source with respect to a region area of the pixel is 15% or more and 85% or less.
    Type: Grant
    Filed: November 9, 2016
    Date of Patent: September 7, 2021
    Assignee: SHARP KABUSHIKI KAISHA
    Inventor: Katsuji Iguchi
  • Patent number: 11107899
    Abstract: A semiconductor device and method for forming the semiconductor device are provided. In some embodiments, a semiconductor substrate comprises a device region. An isolation structure extends laterally in a closed path to demarcate the device region. A first source/drain region and a second source/drain region are in the device region and laterally spaced. A sidewall of the first source/drain region directly contacts the isolation structure at a first isolation structure sidewall, and remaining sidewalls of the first source/drain region are spaced from the isolation structure. A selectively-conductive channel is in the device region, and extends laterally from the first source/drain region to the second source/drain region. A plate comprises a central portion and a first peripheral portion. The central portion overlies the selectively-conductive channel, and the first peripheral portion protrudes from the central portion towards the first isolation structure sidewall.
    Type: Grant
    Filed: April 1, 2020
    Date of Patent: August 31, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Chang Cheng, Fu-Yu Chu, Ming-Ta Lei, Ruey-Hsin Liu, Shih-Fen Huang
  • Patent number: 11101305
    Abstract: The present technology relates to an imaging element and an electronic device capable of improving sensitivity to infrared light in a back side irradiation imaging element. An imaging element is provided with a semiconductor substrate on which a photoelectric converting unit is formed, a wiring layer arranged on a side opposite to a light receiving surface of the semiconductor substrate, and provided with a wire and a reflective film, and an insulating film stacked between the semiconductor substrate and the wiring layer, in which the reflective film is arranged between the insulating film and the wire and overlaps with at least a part of the photoelectric converting unit of each pixel in a first direction in which the semiconductor substrate and the wiring layer are stacked, and a first interlayer film between the insulating film and the reflective film is thicker than the insulating film. The present technology is applicable to a back side irradiation CMOS image sensor, for example.
    Type: Grant
    Filed: October 13, 2017
    Date of Patent: August 24, 2021
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Sozo Yokogawa, Mikinori Ito, Itaru Oshiyama
  • Patent number: 11102440
    Abstract: A solid-state imaging device includes: a first semiconductor substrate including a photoelectric conversion element; and a second semiconductor substrate including at least a part of a peripheral circuit arranged in a main face of the second semiconductor substrate, the peripheral circuit generating a signal based on the charge of the photoelectric conversion element, a main face of the first semiconductor substrate and the main face of the second semiconductor substrate being opposed to each other with sandwiching a wiring structure therebetween; a pad to be connected to an external terminal; and a protection circuit electrically connected to the pad and to the peripheral circuit, wherein the protection circuit is arranged in the main face of the second semiconductor substrate.
    Type: Grant
    Filed: April 24, 2019
    Date of Patent: August 24, 2021
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Masahiro Kobayashi, Mineo Shimotsusa
  • Patent number: 11088187
    Abstract: A solid-state imaging device includes a first-conductivity-type semiconductor well region, a plurality of pixels each of which is formed on the semiconductor well region and is composed of a photoelectric conversion portion and a pixel transistor, an element isolation region provided between the pixels and in the pixels, and an element isolation region being free from an insulation film and being provided between desired pixel transistors.
    Type: Grant
    Filed: August 28, 2018
    Date of Patent: August 10, 2021
    Inventors: Keiji Tatani, Fumihiko Koga, Takashi Nagano
  • Patent number: 11063071
    Abstract: A multi-level semiconductor device, the device including: a first level including integrated circuits; a second level including a structure designed to conduct electromagnetic waves in a confined manner, where the second level is disposed above the first level, where the first level includes crystalline silicon, where the second level includes crystalline silicon; and an oxide layer disposed between the first level and the second level, where the second level is bonded to the oxide layer, and where the bonded includes oxide to oxide bonds.
    Type: Grant
    Filed: March 1, 2021
    Date of Patent: July 13, 2021
    Assignee: Monolithic 3D Inc.
    Inventors: Zvi Or-Bach, Deepak C. Sekar, Brian Cronquist
  • Patent number: 11049896
    Abstract: Disclosed is a light receiving element including an on-chip lens, a wiring layer, and a semiconductor layer disposed between the on-chip lens and the wiring layer. The semiconductor layer includes a photodiode, a first transfer transistor that transfers electric charge generated in the photodiode to a first charge storage portion, a second transfer transistor that transfers electric charge generated in the photodiode to a second charge storage portion, and an interpixel separation portion that separates the semiconductor layers of adjacent pixels from each other, for at least part of the semiconductor layer in the depth direction. The wiring layer has at least one layer including a light blocking member. The light blocking member is disposed to overlap with the photodiode in a plan view.
    Type: Grant
    Filed: May 19, 2020
    Date of Patent: June 29, 2021
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Yoshiki Ebiko, Koji Neya, Takuya Sano
  • Patent number: 11050398
    Abstract: A clamp circuit can control a clamp transistor such that a change in a photodiode current detection voltage signal in an optical receiver circuit can control the clamp transistor to change state when a difference of a clamp voltage and the photodiode current detection voltage signal exceeds a threshold voltage of the clamp transistor. Using a feedback loop, the clamp circuit can accurately clamp a current when the photodiode current is larger than a detect current threshold.
    Type: Grant
    Filed: January 16, 2019
    Date of Patent: June 29, 2021
    Assignee: Analog Devices International Unlimited Company
    Inventor: Wei Wang
  • Patent number: 11039100
    Abstract: A signal conversion circuit and a signal readout circuit are provided. The signal conversion circuit includes: an input switched capacitor, one end receiving an electric signal output by a sensing array, and the other end being coupled to an input end of an operational amplifier; a feedback switched capacitor, one end being coupled to the input end of the operational amplifier, and the other end being coupled to an output end of the operational amplifier; an input switch controlling the input switched capacitor to access the signal conversion circuit or not; and a feedback switch controlling the feedback switched capacitor to access the signal conversion circuit or not, wherein the electric signal output by the sensing array comprises a charge signal, a current signal or a voltage signal, and equivalent impedance of the input switched capacitor and the feedback switched capacitor is related to output characteristics of the sensing array.
    Type: Grant
    Filed: February 7, 2020
    Date of Patent: June 15, 2021
    Assignee: Shanghai Harvest Intelligence Technology Co., Ltd.
    Inventor: Fengjun Gu
  • Patent number: 11031420
    Abstract: The present disclosure relates to an image pickup device and an electronic apparatus that enable warping of a substrate to be suppressed. A first structural body including a pixel array unit is layered with a second structural body including an input/output circuit unit and outputting a pixel signal output from the pixel to the outside of the device, and a signal processing circuit; and a signal output external terminal and a signal input external terminal are arranged below the pixel array unit, the signal output external terminal being connected to the outside via a first through-via penetrating through a semiconductor substrate in the second structural body, the signal input external terminal being connected to the outside via a second through-via connected to an input circuit unit and penetrating through the semiconductor substrate.
    Type: Grant
    Filed: November 19, 2019
    Date of Patent: June 8, 2021
    Assignee: SONY CORPORATION
    Inventors: Hiroaki Ishiwata, Harumi Tanaka, Atsuhiro Ando
  • Patent number: 11018164
    Abstract: A thin-film transistor substrate includes a thin-film transistor and a light-shielding part. The thin-film transistor includes a gate electrode, a semiconductor part made from a semiconductor material and superimposed on a part of the gate electrode via a first insulating film, a source electrode on a part of the semiconductor part and connected to the semiconductor part, and a drain electrode on a part of the semiconductor part and connected to the semiconductor part with spaced apart from the source electrode. The light-shielding part includes a first light-shielding section disposed above the semiconductor part, the source electrode, and the drain electrode via the second insulating film and superimposed on the semiconductor part, and a second light-shielding section not to be superimposed on the gate electrode, the source electrode, and the drain electrode and having an opening adjacent to the thin-film transistor.
    Type: Grant
    Filed: January 12, 2018
    Date of Patent: May 25, 2021
    Assignee: SHARP KABUSHIKI KAISHA
    Inventor: Masahiro Yoshida
  • Patent number: 11011569
    Abstract: An image sensor includes a pixel group comprising a plurality of photodiodes configured to produce photocharges produced in response to light incident on the plurality of photodiodes, a floating diffusion region configured to receive and accumulate the photocharges produced by the plurality of photodiodes, a plurality of transfer transistors coupled to the plurality of photodiodes, respectively, each of the plurality of transfer transistors configured to transfer the photocharges produced by the corresponding photodiode, and a common transfer transistor coupled between the plurality of transfer transistors and the floating diffusion region and configured to transfer the photocharges produced by the plurality of photodiodes to the floating diffusion region.
    Type: Grant
    Filed: October 11, 2019
    Date of Patent: May 18, 2021
    Assignee: SK hynix Inc.
    Inventor: Jae Won Lee
  • Patent number: 10998266
    Abstract: A semiconductor device includes a semiconductor chip body having a surface on which a chip pad is disposed, a passivation layer covering the surface of the semiconductor chip body and providing a tapered hole revealing the chip pad, and a redistributed layer (RDL) structure disposed on the passivation layer. The RDL structure includes a first RDL interconnection portion spaced apart from the tapered hole and passing by the tapered hole and a second RDL overlapping pad portion configured to have a bottom portion contacting the revealed chip pad and configured to have a first side surface facing a side surface of the first RDL interconnection portion. A central portion of the first side surface of the second RDL overlapping pad portion extends toward the side surface of the first RDL interconnection portion such that the first side surface is curved.
    Type: Grant
    Filed: December 14, 2018
    Date of Patent: May 4, 2021
    Assignee: SK hynix Inc.
    Inventors: Ki Jun Bang, Sang Jae Kim, Shin Young Park
  • Patent number: 10978501
    Abstract: A multi-level semiconductor device, the device including: a first level including integrated circuits; a second level including an electromagnetic waveguide, where the second level is disposed above the first level, where the first level includes crystalline silicon; and an oxide layer disposed between the first level and the second level, where the second level is bonded to the oxide layer, and where the bonded includes oxide to oxide bonds.
    Type: Grant
    Filed: December 14, 2020
    Date of Patent: April 13, 2021
    Assignee: MONOLITHIC 3D INC.
    Inventors: Zvi Or-Bach, Deepak C. Sekar, Brian Cronquist
  • Patent number: 10964736
    Abstract: An image sensing device is disclosed. The image sensing device includes a semiconductor substrate including an active region, a first impurity region and a second impurity region formed in the active region, a photoelectric conversion region disposed over the semiconductor substrate to be directly coupled to the first impurity region and configured to generate photocharges in response to incident light and transmit the generated photocharges to the first impurity region, a switching element disposed coupled to the first impurity region and the second impurity region and configured to transmit the photocharges stored in the first impurity region to the second impurity region, an insulation structure disposed on sides of the photoelectric conversion region and a plurality of conductive lines disposed in the insulation structure and configured to read out an electrical image signal corresponding to the photocharges generated by the photoelectric conversion region.
    Type: Grant
    Filed: August 26, 2019
    Date of Patent: March 30, 2021
    Assignee: SK hynix Inc.
    Inventor: Byoung Gyu Kim
  • Patent number: 10964754
    Abstract: The present disclosure relates to a solid-state image pickup element in order to enable inhibition of a variation in the photoelectric conversion characteristic of an organic photoelectric conversion film due to atmospheric exposure and a manufacturing method of the solid-state image pickup element, and an electronic device. The solid-state image pickup element includes: a photoelectric conversion film formed above a semiconductor substrate; and a sidewall sealing a side face of the photoelectric conversion film. The sidewall includes a re-deposited film of a film directly under the sidewall. The present disclosure is applicable to, for example, a CMOS image sensor or the like.
    Type: Grant
    Filed: November 17, 2017
    Date of Patent: March 30, 2021
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Masahiro Joei, Kenichi Murata
  • Patent number: 10957186
    Abstract: A surveillance system includes an infrared sensor system coupled to output an infrared signal in response to receiving infrared light, and an audio recording system coupled to output an audio signal in response to recording sound. An image sensor is system coupled to output an image signal in response to receiving image light. A controller is coupled to the infrared sensor system, the audio recording system, and the image sensor system. The controller includes logic that when executed by the controller causes the surveillance system to perform operations including receiving the infrared signal from the infrared sensor system, activating the audio recording system to record the sound, and activating the image sensor system to output the image signal.
    Type: Grant
    Filed: November 29, 2018
    Date of Patent: March 23, 2021
    Assignee: OmniVision Technologies, Inc.
    Inventors: Cheng-Lun Hu, Dong Shi, Chung-An Wang, Lu Chang
  • Patent number: 10943937
    Abstract: An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. Each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. An electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., N-type). At least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. A semiconductor floating diffusion (FD) region (e.g.
    Type: Grant
    Filed: May 19, 2020
    Date of Patent: March 9, 2021
    Inventors: Kyungho Lee, Hyuk An, Hyuk Soon Choi
  • Patent number: 10943934
    Abstract: A multi-level semiconductor device, the device including: a first level including integrated circuits; a second level including an optical waveguide, where the second level is disposed above the first level, where the first level includes crystalline silicon; and an oxide layer disposed between the first level and the second level, where the second level is bonded to the oxide layer, and where the bonded includes oxide to oxide bonds.
    Type: Grant
    Filed: September 21, 2020
    Date of Patent: March 9, 2021
    Assignee: MONOLITHIC 3D INC.
    Inventors: Zvi Or-Bach, Deepak C. Sekar, Paul Lim
  • Patent number: 10930689
    Abstract: A photoelectric conversion apparatus includes a semiconductor layer including a photoelectric conversion portion, a charge holding portion configured to hold electric charge generated from the photoelectric conversion portion, and a charge detection portion to which the electric charge held by the charge holding portion is transferred. A gate electrode of a transistor and a light shielding film including a first portion covering the charge holding portion and a second portion covering an upper surface of the gate electrode are disposed above the semiconductor layer. The distance between the second portion of the light shielding film and the upper surface of the gate electrode is greater than the distance between the first portion of the light shielding film and the semiconductor layer.
    Type: Grant
    Filed: June 12, 2018
    Date of Patent: February 23, 2021
    Assignee: Canon Kabushiki Kaisha
    Inventors: Toshiyuki Ogawa, Hajime Ikeda
  • Patent number: 10928686
    Abstract: An array substrate, a liquid crystal display panel and a display device are provided. The array substrate includes: a substrate; a common electrode and a gate electrode, both disposed on the substrate; and a shielding electrode, disposed on the common electrode and the gate electrode, wherein an orthographic projection of the shielding electrode on the substrate is overlapped with an orthographic projection of the gate electrode on the substrate as well as an orthographic projection of the common electrode on the substrate, and the shielding electrode is electrically connected to the common electrode. In the embodiment of the disclosure, the shielding electrode is disposed on the common electrode and the gate electrode, so that the influence of the voltage difference formed by the gate electrode and the common electrode can be effectively shielded, thereby eliminating the phenomenon of push mura.
    Type: Grant
    Filed: January 14, 2020
    Date of Patent: February 23, 2021
    Assignee: XIANYANG CAIHONG OPTOELECTRONICS TECHNOLOGY CO., LTD
    Inventors: Zhuo Li, Boqin Cui
  • Patent number: 10923607
    Abstract: A solid state imaging apparatus includes an insulation structure formed of an insulation substance penetrating through at least a silicon layer at a light receiving surface side, the insulation structure having a forward tapered shape where a top diameter at an upper portion of the light receiving surface side of the silicon layer is greater than a bottom diameter at a bottom portion of the silicon layer. Also, there are provided a method of producing the solid state imaging apparatus and an electronic device including the solid state imaging apparatus.
    Type: Grant
    Filed: June 4, 2020
    Date of Patent: February 16, 2021
    Assignee: Sony Corporation
    Inventors: Kyohei Mizuta, Tomokazu Ohchi, Yohei Chiba
  • Patent number: 10886305
    Abstract: A display device includes: a substrate; a semiconductor layer of a transistor, on the substrate; a gate electrode of the transistor on the semiconductor layer; and a conductive layer element corresponding to the transistor. The conductive layer element is both electrically connected to a constant voltage source and contacts the substrate.
    Type: Grant
    Filed: July 3, 2019
    Date of Patent: January 5, 2021
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Yunmo Chung, Ilhun Seo, Joosun Yoon, Daewoo Lee, Takyoung Lee
  • Patent number: 10878215
    Abstract: Certain example embodiments relate to an installation structure of a biometric sensor synchronized with a display and a control method thereof. The electronic device may include: a light emitting circuitry configured to output light including a predetermined frequency band; a display panel configured to display an image by using one or more pixels, wherein the one or more pixels includes a plurality of sub-pixels; at least one driver circuit configured to drive at least one pixel among the plurality of sub-pixels; and an optical shielding layer formed adjacent to the at least one driver circuit in order to protect the at least one driver circuit from the light including a predetermined frequency band. Various embodiments can be implemented.
    Type: Grant
    Filed: January 22, 2018
    Date of Patent: December 29, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Joungmin Cho, Minsuk Uhm, Gyusang Cho, Taesung Kim, Hyunchang Shin, Heungsik Shin, Jiwoong Oh
  • Patent number: 10879296
    Abstract: An example image sensor structure includes an image layer. The image layer includes an array of light detectors disposed therein. A device stack is disposed over the image layer. An array of light guides is disposed in the device stack. Each light guide is associated with at least one light detector of the array of light detectors. A passivation stack is disposed over the device stack. The passivation stack includes a bottom surface in direct contact with a top surface of the light guides. An array of nanowells is disposed in a top layer of the passivation stack. Each nanowell is associated with a light guide of the array of light guides. A crosstalk blocking metal structure is disposed in the passivation stack. The crosstalk blocking metal structure reduces crosstalk within the passivation stack.
    Type: Grant
    Filed: December 4, 2018
    Date of Patent: December 29, 2020
    Assignee: ILLUMINA, INC.
    Inventors: Xiuyu Cai, Ali Agah, Tracy H. Fung, Dietrich Dehlinger
  • Patent number: 10880467
    Abstract: An image sensor pixel array comprises a plurality of image pixel units to gather image information and a plurality of phase detection auto-focus (PDAF) pixel units to gather phase information. Each of the PDAF pixel units includes two of first image sensor pixels covered by a shared micro-lens. Each of the image pixel units includes four of second image sensor pixels adjacent to each other, wherein each of the second image sensor pixels is covered by an individual micro-lens. A coating layer is disposed on the micro-lenses and forms a flattened surface across the whole image sensor pixel array to receive incident light.
    Type: Grant
    Filed: June 25, 2018
    Date of Patent: December 29, 2020
    Assignee: OmniVision Technologies, Inc.
    Inventors: Chen-Wei Lu, Yin Qian, Dyson Tai, Chin Poh Pang, Boyang Zhang, Cheng Zhao
  • Patent number: 10854654
    Abstract: A method of manufacturing a semiconductor apparatus, includes forming a first trench on a side of a first face of a semiconductor substrate having the first face and a second face, forming a gettering region by implanting ions in the semiconductor substrate through the first trench, and forming a second trench on the side of the first face of the semiconductor substrate after the forming the gettering region. A depth of a bottom surface of the second trench with reference to the first face is smaller than a depth of a bottom surface of the first trench with reference to the first face.
    Type: Grant
    Filed: January 24, 2019
    Date of Patent: December 1, 2020
    Assignee: CANON KABUSHIKI KAISHA
    Inventor: Toshihiro Shoyama
  • Patent number: 10854664
    Abstract: The present disclosure relates to a solid-state image pickup device and a method for manufacturing the same, and an electronic apparatus, capable of suppressing color mixture, stray light, reduction in contour resolution, and the like.
    Type: Grant
    Filed: August 29, 2017
    Date of Patent: December 1, 2020
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Atsushi Yamamoto, Kunihiko Hikichi
  • Patent number: 10833108
    Abstract: A 3D micro display, the 3D micro display including: a first single crystal layer including at least one LED driving circuit; a second single crystal layer including a first plurality of light emitting diodes (LEDs), where the second single crystal layer is on top of the first single crystal layer, where the second single crystal layer includes at least ten individual first LED pixels; and a second plurality of light emitting diodes (LEDs), where the 3D micro display includes an oxide to oxide bonding structure.
    Type: Grant
    Filed: April 27, 2020
    Date of Patent: November 10, 2020
    Assignee: Monolithic 3D INC.
    Inventors: Zvi Or-Bach, Deepak C. Sekar
  • Patent number: 10834339
    Abstract: An apparatus includes a solid-state imaging element including a first pixel and a second pixel, the first pixel being higher in sensitivity than the second pixel in a first wavelength range of visible light, the second pixel being higher in sensitivity than the first pixel in a second wavelength range of visible light, and further the first pixel being higher in sensitivity than the second pixel in a wavelength range of near-infrared light, a first cut filter provided on a light entry side of the solid-state imaging element and configured to cut visible light, and at least one processor or circuit configured to generate an image from pixel signals acquired by the solid-state imaging element, wherein the at least one processor or circuit determines a pixel signal to be used for generating the image, according to brightness of an object.
    Type: Grant
    Filed: November 19, 2018
    Date of Patent: November 10, 2020
    Assignee: CANON KABUSHIKI KAISHA
    Inventor: Aihiko Numata
  • Patent number: 10802351
    Abstract: The present disclosure provides an array substrate, a driving method thereof and a display panel. The array substrate includes: a plurality of pixels arranged in a matrix, wherein two adjacent rows of pixels are grouped into a pixel group; switching elements respectively connected with the pixels; a data line, wherein two data lines corresponds to each column of pixels arranged at two sides of this column respectively; and gate lines each located between two adjacent rows of pixels of each pixel group; wherein respective pixels in a same pixel group are connected with one gate line located between two rows of pixels though respective switching elements; two pixels adjacent to each other along a column direction in a same pixel group are respectively connected with two data lines respectively located at two sides of a column where the two pixels are located through respective switching elements.
    Type: Grant
    Filed: July 14, 2017
    Date of Patent: October 13, 2020
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Xueguang Hao, Jianbo Xian, Yong Qiao
  • Patent number: 10798325
    Abstract: An image sensor is provided, the image sensor including: an imaging unit that has a first imaging region and a second imaging region, and outputs: a first pixel signal generated according to light incident on the first imaging region; and a second pixel signal generated according to light incident on the second imaging region; a first ramp generating unit that generates a first ramp signal; a second ramp generating unit that generates a second ramp signal; a first signal converting unit that converts the first pixel signal into a first digital image signal based on a result of comparison between the first pixel signal and the first ramp signal; and a second signal converting unit that converts the second pixel signal into a second digital image signal based on a result of comparison between the second pixel signal and the second ramp signal.
    Type: Grant
    Filed: November 9, 2018
    Date of Patent: October 6, 2020
    Assignee: NIKON CORPORATION
    Inventors: Hironobu Murata, Shiro Tsunai, Takashi Kuriyama
  • Patent number: 10790265
    Abstract: A semiconductor device structure is provided. The semiconductor device structure has a first surface and a second surface. A first charged layer is disposed over the second surface. A dielectric layer separates a surface of the first charged layer that is closest to the semiconductor substrate from the second surface of the semiconductor substrate. A second charged layer is over the first charged layer. The first charged layer and the second charged layer are different materials and have a same charge polarity.
    Type: Grant
    Filed: December 19, 2017
    Date of Patent: September 29, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Min-Feng Kao, Dun-Nian Yaung, Jen-Cheng Liu, Jeng-Shyan Lin, Hsun-Ying Huang
  • Patent number: 10790321
    Abstract: The present disclosure relates to a CMOS image sensor, and an associated method of formation. In some embodiments, the CMOS image sensor comprises a floating diffusion region disposed at one side of a transfer gate within a substrate and a photo detecting column disposed at the other side of the transfer gate opposing to the floating diffusion region within the substrate. The photo detecting column comprises a doped sensing layer with a doping type opposite to that of the substrate. The photo detecting column and the substrate are in contact with each other at a junction interface comprising one or more recessed portions. By forming the junction interface with recessed portions, the junction interface is enlarged compared to a previous p-n junction interface without recessed portions, and thus a full well capacity of the photodiode structure is improved.
    Type: Grant
    Filed: June 25, 2018
    Date of Patent: September 29, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chia-Yu Wei, Hsin-Chi Chen, Kuo-Cheng Lee, Ping-Hao Lin, Hsun-Ying Huang, Yen-Liang Lin, Yu Ting Kao
  • Patent number: 10790469
    Abstract: A substrate (100) includes a resin material. A first stacked film (210) is configured by laminating multiple layers and is formed on a first surface (102) of the substrate (100). A light-emitting unit (140) is formed over the first stacked film (210) and includes an organic layer. A second stacked film (220) is configured by laminating multiple layers and covers the light-emitting unit (140). A third stacked film (310) is configured by laminating multiple layers and is formed on a second surface (104) of the substrate (100). The third stacked film (310) is the same stacked film as the first stacked film (210), and the fourth stacked film (320) is the same stacked film as the second stacked film (220).
    Type: Grant
    Filed: February 11, 2019
    Date of Patent: September 29, 2020
    Assignees: PIONEER CORPORATION, TOHOKU PIONEER CORPORATION
    Inventors: Shuichi Seki, Shinsuke Tanaka
  • Patent number: 10782428
    Abstract: A light receiving device includes a protective layer between first and second electrodes, a first semiconductor layer between the protective layer and the first electrode, the first semiconductor layer having first and second protruding portions, an insulating material between the first and second protruding portions and extending between the protective layer and the first semiconductor layer, a second semiconductor layer between the first protruding portion and the protective layer and between the first protruding portion and the insulating material, a third semiconductor layer between the second semiconductor layer and the protective layer and between the second semiconductor layer and the insulating material, a fourth semiconductor layer between the second protruding portion and the protective layer and between the second protruding portion and the insulating material, and a fifth semiconductor layer between the fourth semiconductor layer and the protective layer and between the fourth semiconductor layer
    Type: Grant
    Filed: August 12, 2019
    Date of Patent: September 22, 2020
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
    Inventor: Koichi Kokubun
  • Patent number: 10777700
    Abstract: Optoelectronic devices that use very thin single-crystalline inorganic semiconductor films as phonon-absorbing layers in combination with non-lattice optical cavities are provided.
    Type: Grant
    Filed: June 2, 2017
    Date of Patent: September 15, 2020
    Assignees: Wisconsin Alumni Research Foundation, The Research Foundation for the State University of New York
    Inventors: Zhenqiang Ma, Zhenyang Xia, Qiaoqiang Gan, Haomin Song, Zongfu Yu, Ming Zhou
  • Patent number: 10756218
    Abstract: A solid state imaging apparatus includes an insulation structure formed of an insulation substance penetrating through at least a silicon layer at a light receiving surface side, the insulation structure having a forward tapered shape where a top diameter at an upper portion of the light receiving surface side of the silicon layer is greater than a bottom diameter at a bottom portion of the silicon layer. Also, there are provided a method of producing the solid state imaging apparatus and an electronic device including the solid state imaging apparatus.
    Type: Grant
    Filed: October 23, 2019
    Date of Patent: August 25, 2020
    Assignee: Sony Corporation
    Inventors: Kyohei Mizuta, Tomokazu Ohchi, Yohei Chiba
  • Patent number: 10748948
    Abstract: A system and method for forming pixels in an image sensor is provided. In an embodiment, a semiconductor device includes an image sensor including a first pixel region and a second pixel region in a substrate, the first pixel region being adjacent to the second pixel region. A first anti-reflection coating is over the first pixel region, the first anti-reflection coating reducing reflection for a first wavelength range of incident light. A second anti-reflection coating is over the second pixel region, the second anti-reflection coating reducing reflection for a second wavelength range of incident light that is different from the first wavelength range.
    Type: Grant
    Filed: May 31, 2017
    Date of Patent: August 18, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yen-Chang Chu, Yeur-Luen Tu, Cheng-Yuan Tsai
  • Patent number: 10748955
    Abstract: An image sensor and a method of manufacturing the image sensor are provided. The image sensor includes: a substrate comprising a pixel area, a first side, and a second side opposite to the first side, wherein the pixel area includes pixels and light is incident to the second side; a photodiode arranged in each of the pixels of the substrate; a pixel separation structure arranged in the substrate to separate the pixels from each other and including a conductive layer therein; and a voltage-applying wire layer spaced apart from the conductive layer and arranged to surround at least a portion of an outer portion of the pixel area. The conductive layer has a mesh structure that is a single unitary structure, and the voltage-applying wire layer is electrically connected to the conductive layer through at least one contact.
    Type: Grant
    Filed: December 9, 2016
    Date of Patent: August 18, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-sun Oh, Dong-hyuk Park, Hee-sang Kwon
  • Patent number: 10748950
    Abstract: There is provided a light receiving element including; an on-chip lens; a wiring layer; and a semiconductor layer disposed between the on-chip lens and the wiring layer. The semiconductor layer includes a first voltage applying unit to which a first voltage is applied, a second voltage applying unit to which a second voltage different from the first voltage is applied, a first charge detection unit disposed in a vicinity of the first voltage applying unit, and a second charge detection unit disposed in a vicinity of the second voltage applying unit, and the wiring layer includes a reflection suppressing structure that suppresses reflection of light in a plane region corresponding to the first charge detection unit and the second charge detection unit.
    Type: Grant
    Filed: March 1, 2019
    Date of Patent: August 18, 2020
    Assignee: Sony Semiconductor Solutions Corporation
    Inventor: Ryota Watanabe
  • Patent number: 10741600
    Abstract: An imaging device including a semiconductor substrate; and a pixel. The pixel includes a photoelectric converter having a first electrode, a second electrode and a photoelectric conversion layer sandwiched between the first electrode and the second electrode, the photoelectric converter located above a surface of the semiconductor substrate; a first transistor that includes a part of the semiconductor substrate and detects electric charges; and a second transistor that includes a gate electrode and initializes a voltage of the first electrode. The first electrode, the second transistor, and the first transistor are arranged in that order toward the semiconductor substrate from the first electrode in cross sectional view, and when viewed from the direction normal to the surface of the semiconductor substrate, a part of the gate electrode overlaps the first electrode, and another part of the gate electrode does not overlap the first electrode.
    Type: Grant
    Filed: November 9, 2018
    Date of Patent: August 11, 2020
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Tokuhiko Tamaki, Junji Hirase, Shigeo Yoshii
  • Patent number: 10720471
    Abstract: A photoelectric conversion device of an embodiment of the technology includes: a first electrode and a second electrode facing each other; a photoelectric conversion layer provided between the first electrode and the second electrode; and a buffer layer provided between the first electrode and the photoelectric conversion layer, and having an interface, to which an organic molecule or a halogen element is coordinated, with the photoelectric conversion layer.
    Type: Grant
    Filed: August 16, 2016
    Date of Patent: July 21, 2020
    Assignee: Sony Corporation
    Inventors: Michinori Shiomi, Syuuiti Takizawa, Takeru Bessho, Hideki Ono, Yosuke Saito, Yoshiaki Obana, Daisuke Hobara
  • Patent number: 10714515
    Abstract: An image sensing apparatus is provided. The apparatus comprises pixels each including a photoelectric conversion element arranged in a semiconductor layer which has a first surface and a second surface and a wiring layer arranged below the first surface. Each of the pixels includes a first reflection film arranged below the first surface, an interlayer film arranged so as to cover the second surface, a second reflection film arranged inside the interlayer film and a microlens which is arranged above the interlayer film. An aperture is arranged in a portion, of the second reflection film, which overlaps the photoelectric conversion element. An area of the aperture is smaller than an area of the photoelectric conversion element, and each of the pixels further includes a deflecting portion configured to deflect light between the aperture and the second surface.
    Type: Grant
    Filed: December 17, 2018
    Date of Patent: July 14, 2020
    Assignee: Canon Kabushiki Kaisha
    Inventor: Mahito Shinohara
  • Patent number: 10705657
    Abstract: A touch panel, a display apparatus, and a method of manufacturing the touch panel. The touch panel includes a substrate, sense patterns disposed on the substrate and including a mesh type metal grid, and a transparent conductive layer patterned to correspond to each of the sense patterns and disposed to cover the metal grid.
    Type: Grant
    Filed: April 8, 2014
    Date of Patent: July 7, 2020
    Assignee: Samsung Display Co., Ltd.
    Inventors: Choon-Hyop Lee, Heung-Seok Go, Jang-Ung Park, Byeong-Wan An, In-Nam Lee, Young-Kuil Joo
  • Patent number: 10700114
    Abstract: The present technology relates to a solid-state imaging element configured so that pixels can be more reliably separated, a method for manufacturing the solid-state imaging element, and an electronic apparatus. The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.
    Type: Grant
    Filed: April 11, 2017
    Date of Patent: June 30, 2020
    Assignee: Sony Corporation
    Inventors: Hideyuki Honda, Tetsuya Uchida, Toshifumi Wakano, Yusuke Tanaka, Yoshiharu Kudoh, Hirotoshi Nomura, Tomoyuki Hirano, Shinichi Yoshida, Yoichi Ueda, Kosuke Nakanishi
  • Patent number: 10672817
    Abstract: An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. Each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. An electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., N-type). At least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. A semiconductor floating diffusion (FD) region (e.g.
    Type: Grant
    Filed: November 13, 2018
    Date of Patent: June 2, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyungho Lee, Hyuk An, Hyuk Soon Choi
  • Patent number: 10656488
    Abstract: The disclosure provides an array substrate, a display panel and a display device, and the array substrate includes: an insulation substrate, gate lines arranged on the insulation substrate to extend in a first direction, and data lines arranged on the insulation substrate to extend in a second direction, and to be insulated from the gate lines, the gate lines intersect with the data lines to define a plurality of pixel areas, each pixel area has a larger length in the first direction than that in the second direction, where the array substrate further includes a plurality of common electrodes, and a projection of each of the plurality of common electrodes on the insulation substrate and a projection of each of the gate lines on the insulation substrate do not overlap with each other.
    Type: Grant
    Filed: November 24, 2017
    Date of Patent: May 19, 2020
    Assignee: BOE Technology Group Co., Ltd.
    Inventors: Liwei Liu, Yoon-Sung Um